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JPH09121137A - Surface acoustic wave device and equipment using the same - Google Patents

Surface acoustic wave device and equipment using the same

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Publication number
JPH09121137A
JPH09121137A JP25927796A JP25927796A JPH09121137A JP H09121137 A JPH09121137 A JP H09121137A JP 25927796 A JP25927796 A JP 25927796A JP 25927796 A JP25927796 A JP 25927796A JP H09121137 A JPH09121137 A JP H09121137A
Authority
JP
Japan
Prior art keywords
pattern
conductive
substrate
acoustic wave
surface acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25927796A
Other languages
Japanese (ja)
Other versions
JP2892993B2 (en
Inventor
Satoshi Wakamori
聡 若森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8259277A priority Critical patent/JP2892993B2/en
Publication of JPH09121137A publication Critical patent/JPH09121137A/en
Application granted granted Critical
Publication of JP2892993B2 publication Critical patent/JP2892993B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

(57)【要約】 【目的】高周波領域で動作する弾性表面波装置におい
て、入出力端子間、特に基板内部における電磁結合を阻
止して通過帯域特性を改善した弾性表面波装置及びこれ
を用いた機器を提供すること。 【構成】入力端子用導電パターン5と出力端子用導電パ
ターン6との間の絶縁基板1内部に導電部材12を配置
し、該導電部材をアース用パターン7と電気的に接続し
た。 【効果】入出力端子間の基板内部における電磁結合を防
止し、400MHz以上の高周波帯において50dB以
上の帯域外抑圧度(減衰量)を持つ弾性表面波装置を実
現出来る。
(57) [Abstract] [Purpose] In a surface acoustic wave device operating in a high frequency region, a surface acoustic wave device having improved pass band characteristics by blocking electromagnetic coupling between input / output terminals, particularly inside a substrate, and the same are used. Providing equipment. A conductive member 12 is arranged inside the insulating substrate 1 between the conductive pattern 5 for input terminals and the conductive pattern 6 for output terminals, and the conductive member is electrically connected to the ground pattern 7. [Effect] It is possible to prevent the electromagnetic coupling inside the substrate between the input and output terminals and realize the surface acoustic wave device having the out-of-band suppression degree (attenuation amount) of 50 dB or more in the high frequency band of 400 MHz or more.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、SAWフィルタのを備
えた弾性表面波装置及びこれを用いた機器に係り、特に
400MHz帯以上の高周波帯における入出力アイソレ
ーションを充分得るのに好適な弾性表面波装置及びこれ
を用いた機器に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device having a SAW filter and a device using the same, and in particular, it is suitable for obtaining sufficient input / output isolation in a high frequency band of 400 MHz band or more. The present invention relates to a surface wave device and a device using the same.

【0002】[0002]

【従来の技術】この種のSAWフィルタは所望通過帯域
特性に対し急峻な遮断特性を呈する可能性と共に扁平状
に薄く、軽く形成出来る可能性を有するので、衛星TV
放送用受信器のIFフィルタ、自動車電話や、携帯電話
やページャの如き移動体通信装置用のフィルタとして使
用出来る。この種の装置に於ける各部品の軽薄短小化は
強く要望されている所である。SAWフィルタは例えば
36°YcutX伝播のLiTaO3基板を用いた素子
で、特開昭56−132807号、57−202114
号、59−58907号、特にその改良が記載されてい
る。
2. Description of the Related Art This type of SAW filter has a possibility of exhibiting a steep cutoff characteristic with respect to a desired pass band characteristic and a possibility of being formed thin and light in a flat shape.
It can be used as an IF filter of a broadcasting receiver and a filter for mobile communication devices such as mobile phones, mobile phones and pagers. There is a strong demand for reducing the size, weight, and size of each component in this type of device. The SAW filter is an element using, for example, a 36 ° YcutX propagating LiTaO3 substrate, and is disclosed in JP-A-56-132807 and 57-202114.
No. 59-58907, especially improvements thereof.

【0003】従来のSAWフィルタ用面実装型パッケー
ジは、特開昭61−245709号に記載のように、絶
縁基板に複数の端子用パターンがあるのみで、それらの
間の電磁干渉を阻止する構造は設けられていない。
A conventional surface mount package for SAW filters has a structure in which only a plurality of terminal patterns are provided on an insulating substrate and electromagnetic interference between them is blocked, as described in JP-A-61-245709. Is not provided.

【0004】[0004]

【発明が解決しようとする課題】即ち、入出力端子間に
シールドを設け、入出力端子間の電磁結合を阻止するア
イソレーションを得る点について配慮がされていない。
また図8(A)に示す如くセラミック製基板P上に設け
られたSAWフィルタチップSF、入出力端子IP,O
Pに加えて、少なくとも入力側アース端子E1、出力側
アース端子E2が各1個有する構成が既知であるが、こ
れらは入、出力端子間の電磁結合阻止用の端子ではな
く、基板Pの裏側を示すFig.8Bの如く端子IP,
OPは基板の表側から延びて来て裏側でも対向配置さ
れ、阻止機能は不充分である。すなわち裏側の各端子は
周辺回路との接続端子としてのみ機能しているものであ
る。従って70MHz以下の低い周波数であれば問題な
いが、特に400MHz以上の高周波においては、入出
力アイソレーションが充分に得られず直達波による帯域
外抑圧度の劣化という問題が生じる。
That is, no consideration is given to providing a shield between the input and output terminals to obtain isolation for preventing electromagnetic coupling between the input and output terminals.
Further, as shown in FIG. 8A, the SAW filter chip SF, the input / output terminals IP, O provided on the ceramic substrate P are provided.
In addition to P, it is known that at least one input side ground terminal E1 and one output side ground terminal E2 are provided, but these are not terminals for preventing electromagnetic coupling between the input and output terminals, but the back side of the substrate P. FIG. Terminal IP as 8B,
The OP extends from the front side of the substrate and is arranged opposite to the back side, so that the blocking function is insufficient. That is, each terminal on the back side functions only as a connection terminal with a peripheral circuit. Therefore, there is no problem at a low frequency of 70 MHz or less, but especially at a high frequency of 400 MHz or more, input / output isolation cannot be sufficiently obtained, and a problem occurs that the out-of-band suppression degree due to a direct wave deteriorates.

【0005】本発明の目的は、高周波領域で動作する弾
性表面波装置において、入出力端子間、特に基板内部に
おける電磁結合を阻止して通過帯域特性を改善した弾性
表面波装置及びこれを用いた機器を提供することにあ
る。
It is an object of the present invention to use a surface acoustic wave device which operates in a high frequency range and which has improved pass band characteristics by blocking electromagnetic coupling between input / output terminals, especially inside a substrate. To provide equipment.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
の本発明に係る弾性表面波装置は、SAWフィルタ・チ
ップと、該SAWフィルタ・チップに電気的に接続され
る入力端子用導電パターン及び出力端子用導電パターン
並びにアース用パターンが形成された絶縁基板とを有す
る弾性表面波装置において、前記入力端子用導電パター
ンと前記出力端子用導電パターンとの間の前記絶縁基板
内部に、少なくとも1つ以上の導電部材を配置し、該導
電部材を前記アース用パターンと電気的に接続したこと
を特徴とする。
To achieve the above object, a surface acoustic wave device according to the present invention comprises a SAW filter chip, a conductive pattern for an input terminal electrically connected to the SAW filter chip, and In a surface acoustic wave device having an insulating substrate on which a conductive pattern for an output terminal and a ground pattern are formed, at least one is provided inside the insulating substrate between the conductive pattern for an input terminal and the conductive pattern for an output terminal. The above-mentioned conductive member is arranged, and the conductive member is electrically connected to the ground pattern.

【0007】前記導電部材の少なくとも1つを、前記入
力端子用導電パターンと出力端子用導電パターンとを結
ぶ直線上に配置してもよい。
At least one of the conductive members may be arranged on a straight line connecting the input terminal conductive pattern and the output terminal conductive pattern.

【0008】前記SAWフィルタ・チップは、導電性を
有するケース部材により覆われて密閉されてもよい。こ
のケース部材は金属製であってもよい。
The SAW filter chip may be covered and hermetically sealed with a conductive case member. The case member may be made of metal.

【0009】また、本発明では、400MHz以上の周
波数帯で、通過帯域外の減衰量が50dB以上の弾性表
面波装置が実現できる。
Further, according to the present invention, it is possible to realize a surface acoustic wave device having an attenuation outside the pass band of 50 dB or more in a frequency band of 400 MHz or more.

【0010】[0010]

【作用】本発明によれば、入、出力端子用導電パターン
間の絶縁基板内部に導電部材を挿入し、これをアース用
パターンに接続したので、入力端子用導電パターンから
出力端子用導電パターンへ、絶縁基板内部介して伝達す
る直達波を遮断でき、絶縁基板内部に発生する電磁結合
を防止できる。また、SAWフィルタ・チップが金属製
にカバー部材により覆われて密閉されるので、外部から
の電磁波に対してシールドすることができる。
According to the present invention, since the conductive member is inserted into the insulating substrate between the input and output terminal conductive patterns and is connected to the ground pattern, the input terminal conductive pattern is changed to the output terminal conductive pattern. The direct wave transmitted through the inside of the insulating substrate can be blocked, and the electromagnetic coupling generated inside the insulating substrate can be prevented. Further, since the SAW filter chip is made of metal and covered with the cover member and hermetically sealed, it is possible to shield the electromagnetic wave from the outside.

【0011】[0011]

【実施例】図1(A)は、本発明の一実施例を示したも
のである。SAWフィルタチップ3は、ダイボンド接着
剤によりセラミック製の両面基板1に接着される。基板
上に入、出力端子用導電パターン5,6に加えてアース
用パターン7が例えばNiメッキ層上にAuメッキを施
して図示の配置に設けられる。基板表面の中央両側部に
設けられたパターン5,6と絶縁スペース10を介して
パターン7がこれらを囲む様に配置される。そしてチッ
プ上の入力パッド8(例えばAl蒸着膜)と基板の入力
端子用パターン5、出力パッド9と出力端子用パターン
6、アースパッドとアース用パターン7はワイヤ4にて
電気的に接続されている。両面基板1の上、下面を図2
(A),(B)で示すように、各導電パターンは両面で
同じ様に設けられて、夫れ夫れ側面部に設けられる延長
部6c,7cを介して導電結合している。またスルーホ
ール12(例えばNiを埋込む)を形成して電気的に接
続してもよい。基板表面中央部(チップ3の下部付近)
に複数のスルーホール12(図2(A)では3個)を設
けてアース用パターン7と接続することにより基板内部
を通る電磁結合を阻止する効果も生じる。基板の上、下
面上で入、出力端子用パターンを囲む様にアースパター
ン7を配置する構造により、入、出力端子用パターン間
の電磁結合による直達波を遮断することができる。それ
によって、400MHz以上の高周波帯においても入出
力間のアイソレーションが充分に得られ、40dB以上
の帯域外抑圧度と共に実質的にSAWフィルタチップ3
の音響特性を表わす急峻な立ち上り、立ち下り特性を持
つ帯域特性を実現できる。そして、外部の塵埃や湿気を
防ぐために非金属、例えば樹脂製のキャップ2にて封止
することにより、面付けタイプのSAWフィルタ装置を
実現することができる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1A shows an embodiment of the present invention. The SAW filter chip 3 is adhered to the ceramic double-sided substrate 1 with a die bond adhesive. In addition to the conductive patterns 5 and 6 for output terminals on the substrate, the ground pattern 7 is provided in the illustrated arrangement by, for example, Au plating on the Ni plating layer. A pattern 7 is arranged so as to surround the patterns 5 and 6 provided on both sides of the center of the substrate and an insulating space 10 therebetween. The input pad 8 (for example, Al vapor deposition film) on the chip and the input terminal pattern 5 on the substrate, the output pad 9 and the output terminal pattern 6, and the ground pad and the ground pattern 7 are electrically connected by the wire 4. There is. The upper and lower surfaces of the double-sided substrate 1 are shown in FIG.
As shown in (A) and (B), the conductive patterns are provided on both sides in the same manner, and are conductively coupled to each other via the extension portions 6c and 7c provided on the side surface portions. In addition, a through hole 12 (for example, Ni is buried) may be formed and electrically connected. Central part of substrate surface (near bottom of chip 3)
By providing a plurality of through holes 12 (three in FIG. 2A) and connecting to the ground pattern 7, an effect of blocking electromagnetic coupling passing through the inside of the substrate is also produced. With the structure in which the ground pattern 7 is arranged so as to surround the input / output terminal patterns on the upper and lower surfaces of the substrate, it is possible to block direct waves due to electromagnetic coupling between the input / output terminal patterns. Thereby, the isolation between the input and the output can be sufficiently obtained even in the high frequency band of 400 MHz or more, and the SAW filter chip 3 with the out-of-band suppression degree of 40 dB or more is substantially provided.
It is possible to realize a band characteristic having steep rising and falling characteristics, which represents the acoustic characteristics of the. Then, by imposing a non-metal, for example, resin cap 2 to prevent external dust and moisture, an imposition type SAW filter device can be realized.

【0012】図3(A),(B),(C)は本発明の別
の実施例を示し、基板の表、裏面、側面の導電パターン
のレイアウトならびに主要部の寸法のみを示し、他部分
は図1実施例と同様なので図示を省略してある。
FIGS. 3A, 3B and 3C show another embodiment of the present invention, showing only the layout of the conductive patterns on the front, back and side surfaces of the substrate and the dimensions of the main part, and the other parts. Are omitted because they are the same as those in FIG.

【0013】図1(A)の導電パターンのレイアウトに
対し本実施例の導電パターンのレイアウトの主な差異は
基板の表、裏面の入、出力端子用導電パターンが基板側
面上の延長部を介して互に接続されておらず、SAWフ
ィルタ・チップが設けられる表側表面の入、出力端子用
導電パターン35,36は孤立しており、その周囲に絶
縁スペース部30が設けられて、このスペース部30を
介してアース用導電パターン37がパターン35,36
を囲むレイアウトとなっている。従って基板裏面に設け
られ、入、出力端子用導電パターン35′,36′とは
スルーホール12を通して電気的に接続され、導電パタ
ーン35′,36′の周囲に絶縁スペース部30′が設
けられるのは図2で示すレイアウトと同様である。この
ように入、出力端子用導電パターンの孤立化により図7
で示す金属製(導電性)のキャップを用いて密封するこ
とが可能となる。
The main difference between the layout of the conductive pattern of this embodiment and the layout of the conductive pattern of this embodiment is that the conductive pattern for the front and back sides of the substrate and the conductive pattern for the output terminal are provided through the extension on the side surface of the substrate. Are not connected to each other and the input and output terminal conductive patterns 35 and 36 on the front surface on which the SAW filter chip is provided are isolated, and an insulating space portion 30 is provided around them. The conductive pattern 37 for grounding is connected to the patterns 35, 36 through 30.
It is a layout that surrounds. Therefore, it is provided on the back surface of the substrate and electrically connected to the conductive patterns 35 'and 36' for the input and output terminals through the through holes 12, and the insulating space portion 30 'is provided around the conductive patterns 35' and 36 '. Is similar to the layout shown in FIG. In this way, the conductive pattern for the input and output terminals is isolated as shown in FIG.
It becomes possible to seal using a metal (conductive) cap shown by.

【0014】図3(A),(B),(C)の実施例では
5×7×0.5mmのセラミック基板(材質Al2O3)
を使用する。パターンはNiメッキした上にAuメッキ
をほどこし、Al超音波ボンディングが可能で、しかも
半田付け性も良好になる様配慮している。
In the embodiment shown in FIGS. 3A, 3B and 3C, a ceramic substrate of 5 × 7 × 0.5 mm (material Al 2 O 3)
Use The pattern is plated with Ni and then plated with Au so that Al ultrasonic bonding is possible and solderability is also improved.

【0015】図3(A)において、寸法a,bはワイヤ
ボンディング性を行う0.5mm,0.55mmと設定
している。また、寸法cは半田付けをほどこす為、0.
7mmとした。シールドパターンと入出力パターンとの
間のスペースの幅d,eは電気的特性上重要である。特
に寸法e部は、共平面線路を形成しており、SAWフィ
ルタの特性インピーダンスに合わせた、特性インピーダ
ンスとなる様決定すべきである。ここでは、SAWフィ
ルタのインピーダンス50Ωに合わせることにした。A
l2O3セラミック基板の誘電率εrが10程度であるこ
とにより、c/(c+2c)=0.4にて線路インピー
ダンスが50Ωとなる。このことにより、eを0.6m
mと設定した。同様にdを0.5mmと設定した。また
シールドパターンの幅f,gはワイヤボンディングの位
置ずれ、半田ブリッジ等でショートにならない範囲で出
来るだけ広く設定した。f=2.6mm,g=1.6m
mと設定した。また、半田付けをほどこす、側面パター
ンのピッチhは0.27mmとした。なお基板の長さ方
向側面部においても基板両面部のアースパターンを短絡
する導電部を設けている。
In FIG. 3A, the dimensions a and b are set to 0.5 mm and 0.55 mm for wire bonding. Further, the dimension c is 0.
7 mm. The widths d and e of the space between the shield pattern and the input / output pattern are important in terms of electrical characteristics. In particular, the dimension e portion forms a coplanar line and should be determined so as to have a characteristic impedance that matches the characteristic impedance of the SAW filter. Here, the impedance of the SAW filter is set to 50Ω. A
Since the permittivity εr of the l2O3 ceramic substrate is about 10, the line impedance becomes 50Ω at c / (c + 2c) = 0.4. As a result, e is 0.6 m
m. Similarly, d was set to 0.5 mm. Further, the widths f and g of the shield pattern are set as wide as possible within a range in which the position of wire bonding is not displaced and a short circuit is caused by a solder bridge or the like. f = 2.6 mm, g = 1.6 m
m. Moreover, the pitch h of the side surface pattern for soldering was set to 0.27 mm. A conductive portion that short-circuits the ground patterns on both surface portions of the substrate is also provided on the side surface portion in the length direction of the substrate.

【0016】図8に示す従来技術の面付けパッケージに
よるSAWフィルタと、図1(A),(B)の実施例に
よるSAWフィルタ装置を用いて450MHz帯SAW
フィルタとの特性を図4は比較して示している。
A 450 MHz band SAW using the SAW filter according to the conventional imposition package shown in FIG. 8 and the SAW filter device according to the embodiment of FIGS. 1A and 1B.
FIG. 4 shows the characteristics of the filter in comparison.

【0017】図4は、図9に示す従来技術の基板を用い
たSAWフィルタ装置と、図3(A),(B)に示す基
板を用いた図10に示す実施例によるSAWフィルタ装
置を用いて、450MHz帯SAWフィルタを作成し、
その特性を比較したものである。450MHz帯SAW
フィルタ基本設計は圧電結晶基板である36°Ycut
X伝播LiTaO3基板を用いた素子で、その圧電基板
上の電極パターンは、特開昭56−132807号、5
7−202114号、59−58907号公報等に記載
された設計手法により設計されている。チップサイズは
3.0×3.5mmであり、図9に示す様に入、出力用
ボンディングパッド41,42各1個アース用ボンディ
ングパッド43,44,45,46,47,48,6
個、合計8本のワイヤボンディングによりパッケージ基
板との電気的接続を行なう必要がある。したがって従来
技術の基板は図9に示す様に6端子のものを用い、入、
出力用にIP,OP2端子、アース用にF1,F2,F
3,F4,4端子を用いてワイヤ配線を行なった。図1
0は本発明を用いた装置であり、入出力ボンディングパ
ッドはIP,OPと接続され、アースパッド43,4
4,45,46,47,48はアースパターンEと接続
されている。このように作成した基板をキャップにて封
止し、SAWフィルタ装置を作成した。本装置の電気的
特性測定には、図11に示す特性測定用基板を用い、従
来技術の装置では、IPとIIP,OPとOOP,E
1,E3とEE1,E2,E4とEE2を半田付けにて
接続し本発明による装置ではIPとIIP,OPとOO
P,E6,E7,E8とEE1,E3,E4,E5とE
E2を半田付けにて接続し、測定用基板を50Ω同軸ケ
ーブルにて接続し、ネットワークアナライサ(例えばH
P製8507B)にて電気的特性を測定した。なお、図
11でインダクタL1,L2はSAWフィルタの内部容量
分をキャンセルするマッチング用コイルである。特性グ
ラフから分る様に、本発明による装置の帯域外抑圧度は
50dBを実現しており、従来装置に対し、20dB以
上良好である。
FIG. 4 shows the SAW filter device using the conventional substrate shown in FIG. 9 and the SAW filter device according to the embodiment shown in FIG. 10 using the substrate shown in FIGS. 3A and 3B. And make a 450MHz band SAW filter,
The characteristics are compared. 450MHz band SAW
The basic design of the filter is a 36 ° Ycut which is a piezoelectric crystal substrate.
An element using an X-propagation LiTaO3 substrate, and the electrode pattern on the piezoelectric substrate is described in JP-A-56-132807.
It is designed by the design method described in 7-202114, 59-58907, etc. The chip size is 3.0 × 3.5 mm, and as shown in FIG. 9, each of the input and output bonding pads 41, 42 is one ground bonding pad 43, 44, 45, 46, 47, 48, 6
It is necessary to electrically connect to the package substrate by wire bonding of a total of eight wires. Therefore, as the conventional substrate, a 6-terminal substrate is used as shown in FIG.
IP, OP2 terminals for output, F1, F2, F for ground
Wire wiring was performed using 3, F4 and 4 terminals. FIG.
Reference numeral 0 is a device using the present invention, input / output bonding pads are connected to IP and OP, and ground pads 43 and 4 are connected.
4, 45, 46, 47 and 48 are connected to the ground pattern E. The substrate thus prepared was sealed with a cap to prepare a SAW filter device. For measuring the electrical characteristics of this apparatus, the characteristic measuring substrate shown in FIG. 11 is used. In the conventional apparatus, IP and IIP, OP and OOP, E are used.
1, E3 and EE1, E2, E4 and EE2 are connected by soldering, and in the device according to the present invention, IP and IIP, OP and OO
P, E6, E7, E8 and EE1, E3, E4, E5 and E
E2 is connected by soldering, the measurement board is connected by a 50Ω coaxial cable, and a network analyzer (for example, H
The electrical characteristics were measured using P. 8507B manufactured by P. In addition, in FIG. 11, the inductors L1 and L2 are matching coils that cancel the internal capacitance of the SAW filter. As can be seen from the characteristic graph, the out-of-band suppression of the device according to the present invention is 50 dB, which is better than the conventional device by 20 dB or more.

【0018】図5(A),(B)は本発明の更に別の実
施例を示し、セラミック基板1上に於て、アース用導電
パターン57を入、出力端子用導電パターン5′,6′
の間に帯状に設けたレイアウトを示す。
FIGS. 5 (A) and 5 (B) show still another embodiment of the present invention. On the ceramic substrate 1, the ground conductive pattern 57 is inserted and the output terminal conductive patterns 5'and 6 '.
The layout provided in the shape of a strip is shown between.

【0019】図6は、本発明の別の実施例の導電パター
ンレイアウトを示す。このように入力端子用導電パター
ン2個65−1,65−2、出力端子用導電パターン2
個66−1,66−2の場合でもこれらの間にアース用
パターン67を設けることにより本発明の効果を得るこ
とが出来、2個以上の場合も同様である。また図6
(A),(B)上、下面パターンの電気的接続法は、本
実施例スルーホール12以外の方法においても、同等の
効果を得ることができる。本発明により複数のフィルタ
特性を有するSAWフィルタ・チップを1パッケージ内
に実装可能となり、異なる2つの帯域幅のフィルタ特性
を有するBSチューナー用デュアル・SAWフィルタ装
置を1パッケージ内に実装して特性を改善することが出
来る。
FIG. 6 shows a conductive pattern layout of another embodiment of the present invention. Thus, two input terminal conductive patterns 65-1 and 65-2, and output terminal conductive patterns 2
Even in the case of 66-1 and 66-2, the effect of the present invention can be obtained by providing the grounding pattern 67 between them, and the same applies to the case of two or more. FIG.
As for the electrical connection method of the upper and lower patterns of (A) and (B), the same effect can be obtained by a method other than the through hole 12 of this embodiment. According to the present invention, a SAW filter chip having a plurality of filter characteristics can be mounted in one package, and a dual SAW filter device for a BS tuner having filter characteristics of two different bandwidths can be mounted in one package to improve the characteristics. Can be improved.

【0020】図7は本発明による更に別の実施例を示
し、図3(A)の両面基板1に金属性の枠19を銀ロウ
付け等により接着したものに、金属性の平板20を例え
ばシーム熔接等にて熔接する構造を示している。この構
造により塵埃、湿気に対し気密性の高い(例えば、1×
10~5atm cc/secHeオーダのMilitary規
格)パッケージを実現することができると共に外部の電
磁波に対するシールド効果も得られる。
FIG. 7 shows still another embodiment according to the present invention, in which a metallic frame 19 is bonded to the double-sided substrate 1 of FIG. 3 (A) by silver brazing or the like, and a metallic flat plate 20 is used, for example. It shows a structure of welding by seam welding or the like. Due to this structure, it is highly airtight against dust and moisture (eg 1x
It is possible to realize a Military standard) package of the order of 10 to 5 atm cc / sec He and to obtain a shielding effect against external electromagnetic waves.

【0021】[0021]

【発明の効果】以上述べた如く、本発明によれば、入出
力間アイソレーションを充分に得ることができるので、
400MHz以上の高周波帯においても、50dB以上
の帯域外抑圧度(減衰量)を持つ弾性表面波装置を実現
出来る。
As described above, according to the present invention, the isolation between the input and the output can be sufficiently obtained.
It is possible to realize a surface acoustic wave device having an out-of-band suppression degree (attenuation amount) of 50 dB or more even in a high frequency band of 400 MHz or more.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例のSAWフィルタ装置及び密
封用キャップの斜視図。
FIG. 1 is a perspective view of a SAW filter device and a sealing cap according to an embodiment of the present invention.

【図2】図1の基板上の導電パターン配置を示す上面、
側面、下面図。
2 is a top view showing a conductive pattern arrangement on the substrate of FIG.
Side view, bottom view.

【図3】本発明の第2実施例の導電パターン配置(レイ
アウト)の平面図。
FIG. 3 is a plan view of a conductive pattern arrangement (layout) according to a second embodiment of the present invention.

【図4】本発明によるSAWフィルタ装置と従来の装置
との特性を比較する特性図。
FIG. 4 is a characteristic diagram comparing the characteristics of a SAW filter device according to the present invention and a conventional device.

【図5】別の実施例の斜視図。FIG. 5 is a perspective view of another embodiment.

【図6】別の実施例の斜視図。FIG. 6 is a perspective view of another embodiment.

【図7】別の実施例の斜視図。FIG. 7 is a perspective view of another embodiment.

【図8】従来例の斜視図。FIG. 8 is a perspective view of a conventional example.

【図9】別の実施例の斜視図。FIG. 9 is a perspective view of another embodiment.

【図10】別の実施例の斜視図。FIG. 10 is a perspective view of another embodiment.

【図11】電気的特性測定用基板の斜視図。FIG. 11 is a perspective view of a substrate for measuring electrical characteristics.

【符号の説明】[Explanation of symbols]

1…両面基板、 2…キャップ、 3…SAWフィルタチップ、 4…ワイヤ、 5…入力端子パターン、 6…出力端子パターン、 7…アースパターン、 8…上面図、 9…側面図、 10…下面図、 11…断面図、 12…スルーホール、 13…従来技術による基板、 14…本発明による特性、 15…従来技術による特性、 16…上面図、 17…側面図、 18…下面図、 19…金属性枠、 20…金属性平板。 1 ... Double-sided substrate, 2 ... Cap, 3 ... SAW filter chip, 4 ... Wire, 5 ... Input terminal pattern, 6 ... Output terminal pattern, 7 ... Ground pattern, 8 ... Top view, 9 ... Side view, 10 ... Bottom view , 11 ... Cross-sectional view, 12 ... Through hole, 13 ... Conventional substrate, 14 ... Characteristics according to the present invention, 15 ... Conventional characteristics, 16 ... Top view, 17 ... Side view, 18 ... Bottom view, 19 ... Metal Sex frame, 20 ... Metal flat plate.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】SAWフィルタ・チップと、該SAWフィ
ルタ・チップに電気的に接続される入力端子用導電パタ
ーン及び出力端子用導電パターン並びにアース用パター
ンが形成された絶縁基板とを有する弾性表面波装置にお
いて、 前記入力端子用導電パターンと前記出力端子用導電パタ
ーンとの間の前記絶縁基板内部に、少なくとも1つ以上
の導電部材を配置し、該導電部材を前記アース用パター
ンと電気的に接続したことを特徴とする弾性表面波装
置。
1. A surface acoustic wave having a SAW filter chip and an insulating substrate on which a conductive pattern for an input terminal, a conductive pattern for an output terminal, and a ground pattern electrically connected to the SAW filter chip are formed. In the device, at least one conductive member is disposed inside the insulating substrate between the input terminal conductive pattern and the output terminal conductive pattern, and the conductive member is electrically connected to the ground pattern. A surface acoustic wave device characterized in that
【請求項2】前記導電部材の少なくとも1つは、前記入
力端子用導電パターンと出力端子用導電パターンとを結
ぶ直線上に配置されることを特徴とする請求項1に記載
の弾性表面波装置。
2. The surface acoustic wave device according to claim 1, wherein at least one of the conductive members is arranged on a straight line connecting the input terminal conductive pattern and the output terminal conductive pattern. .
【請求項3】前記SAWフィルタ・チップは、導電性を
有するケース部材により覆われて密閉されることを特徴
とする請求項1または2に記載の弾性表面波装置。
3. The surface acoustic wave device according to claim 1, wherein the SAW filter chip is covered and hermetically sealed by a conductive case member.
【請求項4】前記ケース部材は金属製であることを特徴
とする請求項3に記載の弾性表面波装置。
4. The surface acoustic wave device according to claim 3, wherein the case member is made of metal.
【請求項5】SAWフィルタ・チップと、該SAWフィ
ルタ・チップに電気的に接続される入力端子用導電パタ
ーン及び出力端子用導電パターン並びにアース用パター
ンが形成された基板とを有し、 前記入力端子用導電パターンと前記出力端子用導電パタ
ーンとの間の前記基板内部に、少なくとも1つ以上の導
電部材を配置し、該導電部材を前記アース用パターンと
電気的に接続した弾性表面波装置を、該アース用パター
ンを接地してフィルタとして使用したことを特徴とする
機器。
5. A SAW filter chip, and a substrate on which a conductive pattern for an input terminal, a conductive pattern for an output terminal, and a ground pattern electrically connected to the SAW filter chip are formed. A surface acoustic wave device in which at least one or more conductive members are arranged inside the substrate between the conductive pattern for terminals and the conductive pattern for output terminals, and the conductive members are electrically connected to the ground pattern. An apparatus characterized in that the grounding pattern is grounded and used as a filter.
【請求項6】400MHz以上の周波数帯でフィルタと
して使用され、その通過帯域外の減衰量が50dB以上
であることを特徴とする弾性表面波装置。
6. A surface acoustic wave device which is used as a filter in a frequency band of 400 MHz or more and has an attenuation amount outside its pass band of 50 dB or more.
JP8259277A 1996-09-30 1996-09-30 Surface acoustic wave device Expired - Fee Related JP2892993B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8259277A JP2892993B2 (en) 1996-09-30 1996-09-30 Surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8259277A JP2892993B2 (en) 1996-09-30 1996-09-30 Surface acoustic wave device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1278379A Division JP2894616B2 (en) 1988-10-31 1989-10-27 Surface acoustic wave device and equipment using the same

Publications (2)

Publication Number Publication Date
JPH09121137A true JPH09121137A (en) 1997-05-06
JP2892993B2 JP2892993B2 (en) 1999-05-17

Family

ID=17331864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8259277A Expired - Fee Related JP2892993B2 (en) 1996-09-30 1996-09-30 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JP2892993B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007171024A (en) * 2005-12-22 2007-07-05 Ngk Spark Plug Co Ltd Circuit unit for sensor control and detection device
US7515017B2 (en) 2005-10-26 2009-04-07 Fujitsu Media Devices Limited Surface acoustic wave device utilizing a terminal routing pattern
USRE42204E1 (en) * 1998-05-13 2011-03-08 Sony Corporation Information receiving device and method, information release device, and information communication system
WO2012144228A1 (en) * 2011-04-21 2012-10-26 株式会社村田製作所 Circuit module

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5476640U (en) * 1977-11-11 1979-05-31
JPS57170599A (en) * 1981-03-27 1982-10-20 Siemens Ag Electric part mounted with active part on metallic substrate and method of producing same
JPS5838017A (en) * 1981-08-12 1983-03-05 シ−メンス・アクチエンゲゼルシヤフト Electric part mounted with active part on metallic substrate and method of producing same
JPS633623U (en) * 1986-06-23 1988-01-11
JPS63105509A (en) * 1986-10-22 1988-05-10 Toshiba Corp Electronic parts device
JPS63111713A (en) * 1986-10-29 1988-05-17 Matsushita Electric Ind Co Ltd Surface acoustic wave filter

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5476640U (en) * 1977-11-11 1979-05-31
JPS57170599A (en) * 1981-03-27 1982-10-20 Siemens Ag Electric part mounted with active part on metallic substrate and method of producing same
JPS5838017A (en) * 1981-08-12 1983-03-05 シ−メンス・アクチエンゲゼルシヤフト Electric part mounted with active part on metallic substrate and method of producing same
JPS633623U (en) * 1986-06-23 1988-01-11
JPS63105509A (en) * 1986-10-22 1988-05-10 Toshiba Corp Electronic parts device
JPS63111713A (en) * 1986-10-29 1988-05-17 Matsushita Electric Ind Co Ltd Surface acoustic wave filter

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE42204E1 (en) * 1998-05-13 2011-03-08 Sony Corporation Information receiving device and method, information release device, and information communication system
US7515017B2 (en) 2005-10-26 2009-04-07 Fujitsu Media Devices Limited Surface acoustic wave device utilizing a terminal routing pattern
JP2007171024A (en) * 2005-12-22 2007-07-05 Ngk Spark Plug Co Ltd Circuit unit for sensor control and detection device
JP4708999B2 (en) * 2005-12-22 2011-06-22 日本特殊陶業株式会社 Sensor control circuit unit and detection device
WO2012144228A1 (en) * 2011-04-21 2012-10-26 株式会社村田製作所 Circuit module
JP5807675B2 (en) * 2011-04-21 2015-11-10 株式会社村田製作所 Circuit module
US9252476B2 (en) 2011-04-21 2016-02-02 Murata Manufacturing Co., Ltd. Circuit module including a splitter and a mounting substrate

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