JPH0897487A - Magnetoresistance effect device and its reproducing method - Google Patents
Magnetoresistance effect device and its reproducing methodInfo
- Publication number
- JPH0897487A JPH0897487A JP6226411A JP22641194A JPH0897487A JP H0897487 A JPH0897487 A JP H0897487A JP 6226411 A JP6226411 A JP 6226411A JP 22641194 A JP22641194 A JP 22641194A JP H0897487 A JPH0897487 A JP H0897487A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetoresistive effect
- magnetoresistance effect
- film
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000694 effects Effects 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 9
- 230000005291 magnetic effect Effects 0.000 claims abstract description 98
- 239000010408 film Substances 0.000 claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 29
- 238000003475 lamination Methods 0.000 claims abstract description 3
- 230000005415 magnetization Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 229910003962 NiZn Inorganic materials 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁界強度を信号として
読み取る磁気抵抗効果素子に関し、特に、ヨーク型の人
工格子磁気抵抗効果素子において再生出力波形の対称性
を向上させる手段に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element for reading magnetic field strength as a signal, and more particularly to means for improving the symmetry of a reproduction output waveform in a yoke type artificial lattice magnetoresistive effect element.
【０００２】[0002]
【従来の技術】近年、磁気センサーの高感度化および磁
気記録における高密度化が進められており、これに伴い
磁気抵抗効果型磁気センサー（以下、ＭＲセンサーとい
う）および磁気抵抗効果型磁気ヘッド（以下、ＭＲヘッ
ドという）の開発が盛んに進められている。ＭＲセンサ
ーもＭＲヘッドも、磁性材料からなる読み取りセンサー
部の抵抗変化により、外部磁界信号を読み出す訳である
が、ＭＲセンサーおよびＭＲヘッドは、記録媒体との相
対速度が再生出力に依存しないことから、ＭＲセンサー
では高感度が、ＭＲヘッドでは高密度磁気記録において
も高い再生出力が得られるという特長がある。2. Description of the Related Art In recent years, magnetic sensors have been made highly sensitive and magnetic recording has been made at a high density. Along with this, magnetoresistive effect magnetic sensors (hereinafter referred to as MR sensors) and magnetoresistive effect magnetic heads ( Hereinafter, the MR head will be actively developed. Both the MR sensor and the MR head read the external magnetic field signal by changing the resistance of the reading sensor section made of a magnetic material. However, the relative speed of the MR sensor and the MR head to the recording medium does not depend on the reproduction output. The MR sensor has high sensitivity, and the MR head has high reproduction output even in high-density magnetic recording.
【０００３】最近、非磁性薄膜層を介して隣り合う保磁
力の異なった２種類以上の磁性薄膜が積層された構造を
有し、小さな外部磁場で大きな磁気抵抗変化を示す人工
格子磁気抵抗効果膜（以下、磁気抵抗効果膜という）が
発見された（例えば、特開平４−２１８９８２号公
報）。この磁気抵抗効果素子は、数Ｏｅ〜数十Ｏｅ程度
の小さい外部磁場で数％〜数十％の大きい抵抗変化率を
示す。Recently, an artificial lattice magnetoresistive film having a structure in which two or more types of magnetic thin films having different coercive forces adjacent to each other via a nonmagnetic thin film layer are laminated, and exhibiting a large magnetoresistance change with a small external magnetic field. (Hereinafter, referred to as a magnetoresistive film) (for example, JP-A-4-218982). This magnetoresistive effect element exhibits a large rate of resistance change of several percent to several tens of percent with an external magnetic field as small as several Oe to several tens Oe.
【０００４】上記先願の磁気抵抗効果素子において、実
用的なＭＲヘッドとしては、磁気抵抗効果膜の両側に非
磁性絶縁体を介して軟磁性層を積層した構造をなす、シ
ールド型人工格子磁気抵抗効果素子が提案されている
が、この場合、再生波形が極端な非対称となり、また、
磁気抵抗効果膜がヘッド浮上面（空気軸受面）に露出し
ていることにより、腐食が生じやすいという問題があ
る。In the magnetoresistive element of the prior application, a practical MR head has a structure in which soft magnetic layers are laminated on both sides of a magnetoresistive film via a non-magnetic insulator. Although a resistance effect element has been proposed, in this case, the reproduced waveform becomes extremely asymmetric, and
Since the magnetoresistive film is exposed on the air bearing surface (air bearing surface), there is a problem that corrosion is likely to occur.
【０００５】一方、磁気抵抗効果膜をヘッド浮上面から
後退させ、外部磁界を軟磁性ヨークを介して磁気抵抗効
果膜に誘導する構造のヨーク型人工格子磁気抵抗効果素
子（以下、ヨーク型磁気抵抗効果素子という）の場合で
は、磁気抵抗効果膜が表面に露出していないため、磁気
抵抗効果膜の腐食発生の懸念はなくなる。On the other hand, a yoke type artificial lattice magnetoresistive effect element (hereinafter referred to as a yoke type magnetoresistive element) having a structure in which the magnetoresistive effect film is retracted from the air bearing surface of the head and an external magnetic field is guided to the magnetoresistive effect film via a soft magnetic yoke. In the case of the effect element), since the magnetoresistive effect film is not exposed on the surface, there is no concern about corrosion of the magnetoresistive effect film.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、このよ
うなヨーク型磁気抵抗効果素子の場合においても、実用
的なセンサ，磁気ヘッドとして使用する場合は、磁気抵
抗効果膜に外部バイアス磁界を印加しなければ、高出力
でかつ波形の対称的な再生出力が得られず、このような
磁気ヘッドを磁気ディスク装置に用いた場合には、装置
のエラーレートが高くなり、信頼性が低下するという欠
点がある。However, even in the case of such a yoke type magnetoresistive effect element, when it is used as a practical sensor or magnetic head, an external bias magnetic field must be applied to the magnetoresistive effect film. For example, a high output and a symmetrical waveform reproduction output cannot be obtained, and when such a magnetic head is used in a magnetic disk device, the error rate of the device increases and the reliability decreases. is there.
【０００７】本発明の目的は、ヨーク型磁気抵抗効果素
子に的確にバイアス磁界を印加することにより、高出力
でかつ波形の対称的な再生出力を得ることができる磁気
抵抗効果素子およびその再生方法を提供することにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetoresistive element capable of obtaining a high output and symmetrically reproduced output with a waveform by accurately applying a bias magnetic field to a yoke type magnetoresistive element and a reproducing method thereof. Is to provide.
【０００８】[0008]
【課題を解決するための手段】第１の発明の磁気抵抗効
果素子は、保持力の異る２種類以上の磁性薄膜が非磁性
層を介して積層し、繰り返し積層回数が２回以上からな
る人工格子磁気抵抗効果膜に、非磁性絶縁層を介してヨ
ークを配置した磁気抵抗効果素子において、前記ヨーク
と前記人工格子磁気抵抗効果膜とを含んで構成される磁
気経路と、この磁気経路に鎖交し前記磁気経路にバイア
ス磁界を発生させるコイルとを備えることを特徴とす
る。In the magnetoresistive effect element of the first invention, two or more kinds of magnetic thin films having different coercive forces are laminated via a non-magnetic layer, and the number of repeated lamination is two or more. In a magnetoresistive effect element in which a yoke is disposed on an artificial lattice magnetoresistive effect film via a nonmagnetic insulating layer, a magnetic path including the yoke and the artificial lattice magnetoresistive effect film, and a magnetic path And a coil that interlinks and generates a bias magnetic field in the magnetic path.
【０００９】また、第２の発明の磁気抵抗効果素子の再
生方法は、前記ヨークと前記人工格子磁気抵抗効果膜と
を含んで構成される磁気経路に鎖交するコイルに通電
し、前記磁気経路に磁界を発生させるとともに、前記磁
気経路を介して前記人工格子磁気抵抗効果膜にバイアス
磁界を印加しながら外部磁場を検出することを特徴とす
る。Also, in the reproducing method of the magnetoresistive effect element according to the second aspect of the invention, the coil interlinking with the magnetic path constituted by including the yoke and the artificial lattice magnetoresistive effect film is energized, And generating an external magnetic field while applying a bias magnetic field to the artificial lattice magnetoresistive film via the magnetic path.
【００１０】[0010]
【作用】上記先願の磁気抵抗効果膜では、非磁性層を介
して隣り合った磁性薄膜の保磁力の違いにより、外部磁
場によって隣り合った磁性層の磁化の向きが互いに平行
から反平行となることによって抵抗変化が生じる。すな
わち、隣り合う磁性薄膜の各々の保磁力をＨc2，Ｈc
3（０＜Ｈc2＜Ｈc3）として、外部磁場Ｈが磁性薄膜の
保磁力Ｈc2とＨc3との間（Ｈc2＜Ｈ＜Ｈc3）であると
き、隣り合った磁性薄膜の磁化の方向が互いに逆向きと
なって抵抗値が増大する。このため、磁気抵抗効果素子
として作用させるためには、保磁力Ｈc3の磁性薄膜にお
ける磁化は初めに磁化飽和される。In the magnetoresistive film of the prior application, the magnetization directions of the adjacent magnetic layers are changed from parallel to antiparallel by an external magnetic field due to the difference in coercive force between the adjacent magnetic thin films via the nonmagnetic layer. As a result, a resistance change occurs. That is, the coercive force of each of the adjacent magnetic thin films is represented by Hc 2 , Hc
3 (0 <Hc 2 <Hc 3 ), when the external magnetic field H is between the coercive forces Hc 2 and Hc 3 of the magnetic thin films (Hc 2 <H <Hc 3 ), the magnetization of the adjacent magnetic thin films is The directions are opposite to each other and the resistance value increases. Therefore, in order to function as a magnetoresistive effect element, the magnetization of the magnetic thin film having the coercive force Hc 3 is first saturated.
【００１１】このとき、微細加工された磁気抵抗効果膜
では膜端部において、非磁性薄膜を介して隣り合った磁
性薄膜の間で静磁結合が生じているため、外部磁場ゼロ
の状態でも、膜端部では隣り合った磁性層間で磁化が反
平行状態となっている。従って、保磁力Ｈc2の磁性薄膜
の磁化は、膜中央部から膜端部にかけて徐々に反転した
磁化分布となる。At this time, in the microfabricated magnetoresistive effect film, magnetostatic coupling occurs between the adjacent magnetic thin films via the nonmagnetic thin film at the film end, so that even when the external magnetic field is zero, At the film edge, the magnetization is antiparallel between the adjacent magnetic layers. Therefore, the magnetization of the magnetic thin film having the coercive force Hc 2 has a magnetization distribution that is gradually inverted from the center of the film to the end of the film.
【００１２】一方、磁気抵抗効果膜に流す電流によって
電流磁界が生じるため、保磁力Ｈc2の磁性薄膜の磁化
は、この電流磁界の影響も大きく受ける。ヨーク型磁気
抵抗効果素子の場合には、軟磁性体であるヨークが磁気
抵抗効果膜に対して、非磁性絶縁層を介して片側のみに
配置されているため、磁気抵抗効果膜に流す電流によっ
て発生する磁界は、ヨークの影響を受けて非対称な分布
となる。このとき、保磁力Ｈc2の磁性薄膜の磁化分布
は、非対称な電流磁界の影響で、電流方向により差が生
じる。On the other hand, since a current magnetic field is generated by the current flowing through the magnetoresistive film, the magnetization of the magnetic thin film having the coercive force Hc 2 is greatly affected by the current magnetic field. In the case of the yoke type magnetoresistive effect element, since the yoke, which is a soft magnetic material, is arranged only on one side of the magnetoresistive effect film via the non-magnetic insulating layer, it is The generated magnetic field has an asymmetric distribution under the influence of the yoke. At this time, the magnetization distribution of the magnetic thin film having the coercive force Hc2 varies depending on the current direction due to the influence of the asymmetric current magnetic field.
【００１３】ヨーク型磁気抵抗効果素子においては、こ
のような電流方向依存性を考慮し、かつ高い再生出力を
確保するには、ＭＲ高さを小さくすることが有効である
が、ＭＲ高さの減少に伴い、保磁力Ｈc2の磁性薄膜と保
磁力Ｈc3の磁性薄膜との間の静磁結合が、膜端部からヨ
ークで覆われていない膜中央部にまでおよんでいるた
め、再生波形が非対称となる。すなわち、高い再生出力
を確保するとともに再生波形の対称性を良好に保つため
には、ＭＲ膜中央部における静磁結合の影響を相殺する
バイアス磁界を印加することが有効である。In the yoke type magnetoresistive effect element, it is effective to reduce the MR height in order to consider such current direction dependency and to secure a high reproduction output. With the decrease, the magnetostatic coupling between the magnetic thin film with coercive force Hc 2 and the magnetic thin film with coercive force Hc 3 extends from the film edge part to the film central part not covered by the yoke. Becomes asymmetric. That is, it is effective to apply a bias magnetic field that cancels out the effect of magnetostatic coupling at the center of the MR film in order to secure a high reproduction output and maintain good symmetry of the reproduction waveform.
【００１４】ここで、磁気抵抗効果素子に与えるバイア
ス磁界印加方法として、外部磁界からの磁束が前記磁気
抵抗効果素子を介して構成される磁気経路に対し、この
磁気経路を鎖交するコイルを設け、このコイルに直流電
流を流すことにより磁気ヘッドコアにバイアス磁界印加
機構を設ける。ヨーク型気抵抗効果素子では、磁気経路
が形成されており、バイアス磁界を印加させやすい。ま
た、コイルに流す電流源として外部に回路を設ける構成
が可能であるため、バイアス磁界の方向およびその磁界
強度の調整が容易で、かつ的確に行なうことができる。Here, as a method of applying a bias magnetic field to the magnetoresistive element, a coil is provided which links a magnetic path formed by an external magnetic field through the magnetoresistive element to the magnetic path. A bias magnetic field applying mechanism is provided in the magnetic head core by passing a direct current through the coil. In the yoke type air resistance effect element, a magnetic path is formed, and it is easy to apply a bias magnetic field. Further, since it is possible to provide a circuit externally as a current source to be passed through the coil, the direction of the bias magnetic field and the magnetic field strength thereof can be adjusted easily and accurately.
【００１５】[0015]
【実施例】次に、本発明について図面を参照して説明す
る。Next, the present invention will be described with reference to the drawings.
【００１６】図１は、本発明の磁気抵抗効果素子の構成
を示す図であり、図１（ａ），（ｂ）は、それぞれ正面
図および断面図である。また、図２は、図１の磁気抵抗
効果膜１の詳細を示す断面図である。FIG. 1 is a diagram showing the configuration of a magnetoresistive element according to the present invention, and FIGS. 1 (a) and 1 (b) are a front view and a sectional view, respectively. FIG. 2 is a sectional view showing details of the magnetoresistive film 1 of FIG.
【００１７】本実施例の磁気抵抗効果素子は、いわゆ
る、ヨーク型磁気抵抗効果素子であって、図１に示すよ
うに、例えば、ＮｉＺｎフェライト等の強磁性体基板か
らなるバックヨーク７には、溝（例えば、幅：３０μ
ｍ、深さ：４μｍ）が形成され、この溝には非磁性絶縁
体８（例えば、ＳｉＯ2 ）が充填される。そして、この
非磁性絶縁体８上に磁気抵抗効果膜１（例えば、ＭＲ高
さ：３μｍ）を形成し、電極９（例えば、Ａｕ：０．２
４μｍ）および非磁性絶縁層１０（例えば、ＳｉＯ2 ：
０．２μｍ）を介して、ヨーク５およびヨーク６（例え
ば、ＮｉＦｅ：１μｍ）が、磁気抵抗効果膜１とオーバ
ーラップ（例えば、オーバーラップ量：１μｍ）するよ
うに形成されている。また、ヨーク６にはバイアス磁界
を発生するためのコイル１１（例えば、Ｃｕ：３μｍ）
が巻装され、ヨーク５とバックヨク７とで磁気経路を形
成している。なお、図１（ａ）に示す正面図では、構成
の理解を容易にするために非磁性絶縁層１０は省略して
ある。The magnetoresistive effect element of the present embodiment is a so-called yoke type magnetoresistive effect element. As shown in FIG. 1, for example, the back yoke 7 made of a ferromagnetic substrate such as NiZn ferrite is Groove (eg width: 30μ
m, depth: 4 μm), and the groove is filled with a nonmagnetic insulator 8 (for example, SiO 2 ). Then, the magnetoresistive film 1 (for example, MR height: 3 μm) is formed on the non-magnetic insulator 8 and the electrode 9 (for example, Au: 0.2) is formed.
4 μm) and the non-magnetic insulating layer 10 (for example, SiO 2 :
0.2 μm), the yoke 5 and the yoke 6 (for example, NiFe: 1 μm) are formed so as to overlap with the magnetoresistive film 1 (for example, the amount of overlap: 1 μm). Further, the yoke 6 has a coil 11 (for example, Cu: 3 μm) for generating a bias magnetic field.
Is wound, and the yoke 5 and the back yoke 7 form a magnetic path. In the front view shown in FIG. 1A, the nonmagnetic insulating layer 10 is omitted for easy understanding of the structure.
【００１８】磁気抵抗効果膜１は、図２に示すような人
工格子よりなる積層膜であって、その構成材料として、
磁性薄膜２にはＮｉＦｅを、磁性薄膜３にはＣｏを、ま
た、非磁性薄膜４にはＣｕをそれぞれ選択し、例えば、
１．５ｎｍ厚のＮｉＦｅ薄膜，３．５ｎｍ厚のＣｕ薄
膜，１．５ｎｍ厚のＣｏ薄膜および３．５ｎｍ厚のＣｕ
薄膜を順次形成する工程を３回繰り返して作成される。The magnetoresistive film 1 is a laminated film made of an artificial lattice as shown in FIG.
NiFe is selected for the magnetic thin film 2, Co is selected for the magnetic thin film 3, and Cu is selected for the non-magnetic thin film 4, respectively.
1.5 nm thick NiFe thin film, 3.5 nm thick Cu thin film, 1.5 nm thick Co thin film and 3.5 nm thick Cu
It is formed by repeating a process of sequentially forming thin films three times.
【００１９】なお、最後のＣｕ薄膜からなる非磁性薄膜
４は形成されていない。また、磁性薄膜３の矢印は残留
磁化の方向を示している。そして、このように構成され
た磁気抵抗効果膜１の磁気抵抗変化率は９％であった。The nonmagnetic thin film 4 made of the last Cu thin film is not formed. The arrow of the magnetic thin film 3 indicates the direction of residual magnetization. The magnetoresistance effect ratio of the magnetoresistance effect film 1 thus configured was 9%.
【００２０】次に、本発明による磁気抵抗効果素子の再
生方法について説明する。図３は、本発明による磁気抵
抗効果素子を外部の直流電源回路に接続した状態を示す
模式図である。Next, a method of reproducing the magnetoresistive effect element according to the present invention will be described. FIG. 3 is a schematic diagram showing a state where the magnetoresistance effect element according to the present invention is connected to an external DC power supply circuit.
【００２１】本発明による磁気抵抗効果素子を用いて再
生出力を得る場合は、図１に示すコイル１１の端子に外
部電源を接続する。ここで、図３を参照すると、外部電
源である直流電源回路１２は、電流方向を切り替える切
り替え回路１２ａと定電流源１２ｂとから構成されてお
り、切り替え回路１２ａを切り替えることより、定電流
源１２ｂからの電流を任意の向きにコイル１１に印加し
て磁界を発生させるとともに、ヨーク５，ヨーク６およ
びバックヨーク７を介して磁気抵抗効果膜１にバイアス
磁界を印加しながら外部磁場を検出する。When a reproduction output is obtained using the magnetoresistive element according to the present invention, an external power supply is connected to the terminal of the coil 11 shown in FIG. Here, referring to FIG. 3, the DC power supply circuit 12, which is an external power supply, includes a switching circuit 12a for switching the current direction and a constant current source 12b, and by switching the switching circuit 12a, the constant current source 12b Is applied to the coil 11 in an arbitrary direction to generate a magnetic field, and an external magnetic field is detected while applying a bias magnetic field to the magnetoresistive film 1 via the yoke 5, yoke 6, and back yoke 7.
【００２２】このように、磁気抵抗効果素子の近傍にコ
イルを設けて電流を流すことにより、閉磁路が形成され
やすく、バイアス磁界がかけやすい。さらに、外部にバ
イアス磁界を発生するための電源回路を設けることも可
能であるため、バイアス磁界の向き、および磁界強度の
調整が容易で、かつ的確に行なうことができる。As described above, by providing a coil near the magnetoresistive element and passing a current, a closed magnetic circuit is easily formed, and a bias magnetic field is easily applied. Further, since it is possible to provide a power supply circuit for generating a bias magnetic field to the outside, the direction of the bias magnetic field and the magnetic field strength can be adjusted easily and accurately.
【００２３】[0023]
【発明の効果】以上説明したように本発明によれば、ヨ
ーク型磁気抵抗効果効果素子において、人工格子磁気抵
抗効果膜にバイアス磁界を印加するコイルおよびヨーク
を設けることにより、高出力で波形対称性の良好な再生
波形が得られるため、エラーレートの低い高信頼性の磁
気ディスク装置等の外部記憶装置を提供できる。As described above, according to the present invention, in the yoke type magnetoresistive effect element, by providing the coil and the yoke for applying the bias magnetic field to the artificial lattice magnetoresistive effect film, the waveform is symmetrical at a high output. Since it is possible to obtain a reproduced waveform having good characteristics, it is possible to provide an external storage device such as a highly reliable magnetic disk device having a low error rate.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明のヨーク型磁気抵抗効果素子の構成を示
す図である。FIG. 1 is a diagram showing a configuration of a yoke type magnetoresistive effect element of the present invention.
【図２】図１の磁気抵抗効果膜１の詳細を示す断面図で
ある。FIG. 2 is a cross-sectional view showing details of the magnetoresistive film 1 of FIG.
【図３】本発明による磁気抵抗効果素子を外部の直流電
源回路に接続した状態を示す模式図である。FIG. 3 is a schematic diagram showing a state where the magnetoresistance effect element according to the present invention is connected to an external DC power supply circuit.
１ 磁気抵抗効果膜 ２，３ 磁性薄膜 ４ 非磁性薄膜 ５，６ ヨーク ７ バックヨーク ８ 非磁性絶縁体 ９ 電極 １０ 非磁性絶縁層 １１ コイル １２ 直流電源回路 １２ａ 切り替え回路 １２ｂ 定電流源 DESCRIPTION OF SYMBOLS 1 Magnetoresistance effect film 2, 3 Magnetic thin film 4 Nonmagnetic thin film 5, 6 Yoke 7 Back yoke 8 Nonmagnetic insulator 9 Electrode 10 Nonmagnetic insulating layer 11 Coil 12 DC power supply circuit 12a Switching circuit 12b Constant current source
Claims (2)
磁性層を介して積層し、繰り返し積層回数が２回以上か
らなる人工格子磁気抵抗効果膜に、非磁性絶縁層を介し
てヨークを配置した磁気抵抗効果素子において、前記ヨ
ークと前記人工格子磁気抵抗効果膜とを含んで構成され
る磁気経路と、この磁気経路に鎖交し前記磁気経路にバ
イアス磁界を発生させるコイルとを備えることを特徴と
する磁気抵抗効果素子。1. An artificial lattice magnetoresistive effect film comprising two or more types of magnetic thin films having different coercive forces laminated with a non-magnetic layer interposed therebetween, and the artificial lattice magnetoresistive effect film having a number of repeated laminations of two or more, with a non-magnetic insulating layer interposed therebetween. In the magnetoresistive effect element in which a yoke is arranged, a magnetic path including the yoke and the artificial lattice magnetoresistive effect film, and a coil interlinking with the magnetic path and generating a bias magnetic field in the magnetic path are provided. A magnetoresistive effect element characterized by comprising.
外部磁界信号の再生方法であって、前記ヨークと前記人
工格子磁気抵抗効果膜とを含んで構成される磁気経路に
鎖交するコイルに通電し、前記磁気経路に磁界を発生さ
せるとともに、前記磁気経路を介して前記人工格子磁気
抵抗効果膜にバイアス磁界を印加しながら外部磁場を検
出することを特徴とする磁気抵抗効果素子の再生方法。2. A method of reproducing an external magnetic field signal by the magnetoresistive effect element according to claim 1, wherein the coil interlinks with a magnetic path including the yoke and the artificial lattice magnetoresistive effect film. A method of reproducing a magnetoresistive effect element, which comprises energizing to generate a magnetic field in the magnetic path and detecting an external magnetic field while applying a bias magnetic field to the artificial lattice magnetoresistive effect film via the magnetic path. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6226411A JP2661560B2 (en) | 1994-09-21 | 1994-09-21 | Magnetoresistive element and reproducing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6226411A JP2661560B2 (en) | 1994-09-21 | 1994-09-21 | Magnetoresistive element and reproducing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0897487A true JPH0897487A (en) | 1996-04-12 |
| JP2661560B2 JP2661560B2 (en) | 1997-10-08 |
Family
ID=16844703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6226411A Expired - Fee Related JP2661560B2 (en) | 1994-09-21 | 1994-09-21 | Magnetoresistive element and reproducing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2661560B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100425575B1 (en) * | 1999-10-19 | 2004-04-01 | 마츠시타 덴끼 산교 가부시키가이샤 | Magnetic recording device, method of adjusting magnetic head and magnetic recording medium |
| US6721139B2 (en) | 2001-05-31 | 2004-04-13 | International Business Machines Corporation | Tunnel valve sensor with narrow gap flux guide employing a lamination of FeN and NiFeMo |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04339309A (en) * | 1991-05-15 | 1992-11-26 | Hitachi Ltd | Magneto-resistance effect element using multilayred magneto-resistance effect film |
| JPH04364212A (en) * | 1991-06-11 | 1992-12-16 | Fuji Photo Film Co Ltd | Magnetic resistance head |
| JPH05175572A (en) * | 1991-12-20 | 1993-07-13 | Hitachi Ltd | Magnetoresistance effect element, and magnetic head and recording/reproducing device using same |
-
1994
- 1994-09-21 JP JP6226411A patent/JP2661560B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04339309A (en) * | 1991-05-15 | 1992-11-26 | Hitachi Ltd | Magneto-resistance effect element using multilayred magneto-resistance effect film |
| JPH04364212A (en) * | 1991-06-11 | 1992-12-16 | Fuji Photo Film Co Ltd | Magnetic resistance head |
| JPH05175572A (en) * | 1991-12-20 | 1993-07-13 | Hitachi Ltd | Magnetoresistance effect element, and magnetic head and recording/reproducing device using same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100425575B1 (en) * | 1999-10-19 | 2004-04-01 | 마츠시타 덴끼 산교 가부시키가이샤 | Magnetic recording device, method of adjusting magnetic head and magnetic recording medium |
| US6721139B2 (en) | 2001-05-31 | 2004-04-13 | International Business Machines Corporation | Tunnel valve sensor with narrow gap flux guide employing a lamination of FeN and NiFeMo |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2661560B2 (en) | 1997-10-08 |
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