JPH084933B2 - Substrate heating device - Google Patents
Substrate heating deviceInfo
- Publication number
- JPH084933B2 JPH084933B2 JP18297787A JP18297787A JPH084933B2 JP H084933 B2 JPH084933 B2 JP H084933B2 JP 18297787 A JP18297787 A JP 18297787A JP 18297787 A JP18297787 A JP 18297787A JP H084933 B2 JPH084933 B2 JP H084933B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heating
- reflecting mirror
- heating device
- main body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、プリント基板上への電子部品の半田付けな
どにおいて用いる基板加熱装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate heating device used for soldering an electronic component onto a printed circuit board.
従来の技術 プリント基板(以下基板と略記する。)上への電子部
品を高密度で実装する場合の技術動向において、リフロ
ー炉を用いた素子の半田付工法が採用されつつある。リ
フロー工法は、これまでの溶融ハンダ槽に素子の載った
基板をディップするフロー工法と異なり、半田の微細粒
子とペーストとからなるクリーム状半田を、基板の所定
位置に塗布した後に素子を置き、赤外線により加熱溶融
させて半田付けするというものである。2. Description of the Related Art In the technological trend of mounting electronic components on a printed circuit board (hereinafter abbreviated as a board) at high density, a soldering method for elements using a reflow furnace is being adopted. The reflow method is different from the flow method of dipping the board on which the element is placed in the molten solder bath so far, cream-like solder made of fine solder particles and paste, and the element is placed after being applied at a predetermined position on the board, It is a method of heating and melting by infrared rays and soldering.
一般的なリフロー炉を第5図に示す。一定速度νで移
動するコンベア1の上で、素子を載せた基板2は、一定
の熱量を発生し続ける発熱体3により加熱される。炉の
前半部Aは平熱部で、通常150℃前後に基板2を暖め
る。次いでB部で約250℃の温度を発生させ半田付を行
い、その後ファン送風などで冷却して取り出される。A general reflow furnace is shown in FIG. On the conveyor 1 which moves at a constant speed ν, the substrate 2 on which the elements are mounted is heated by the heating element 3 which continues to generate a constant amount of heat. The first half A of the furnace is a normal heating part, and usually heats the substrate 2 around 150 ° C. Next, at the portion B, a temperature of about 250 ° C. is generated and soldering is performed, and then the product is cooled by fan blowing and taken out.
発明が解決しようとする問題点 上記の従来のリフロー工法は、基板の加熱の効率の点
から必ずしも良好とはいえず、単一またはごく少量の加
熱部により同時に多量の基板加熱を行なえることが必要
である。また基板上の素子間の熱容量の差や、その配置
の不均一性から、基板2には温度分布が生じ、場合によ
っては素子の温度が上昇しきらないために半田付ができ
ない箇所ができ、また反対に素子の中には、樹脂モール
ド部品のように、半田付けのために温度を上げ過ぎると
溶融,変形したり、熱破壊をきたす部品も存在するな
ど、同一の基板2の中に十分な加熱を要する素子と、加
熱を好まない素子とが混在しており、これらを同時に半
田付けする必要性がある。Problems to be Solved by the Invention The conventional reflow method described above is not necessarily good in terms of the efficiency of heating the substrate, and it is possible to simultaneously heat a large amount of the substrate with a single or a very small amount of heating section. is necessary. Further, due to the difference in heat capacity between the elements on the board and the non-uniformity of the arrangement, a temperature distribution is generated on the board 2, and in some cases, the temperature of the elements does not rise completely, so that there are places where soldering cannot be performed. On the other hand, some elements, such as resin-molded parts, may melt, deform, or cause thermal damage when the temperature is raised too high for soldering. There are elements that require different heating and elements that do not prefer heating, and it is necessary to solder these elements at the same time.
本発明は上記の問題点を解決するもので、発熱体によ
る基板の加熱を高効率で行ない、かつ温度制御性の大幅
な向上を図ることで、生産性を高め、半田付け不良を低
減し、素子の品質を安定に保護することができる基板加
熱装置を提供することを目的とするものである。The present invention is to solve the above problems, by heating the substrate with a heating element with high efficiency, and by significantly improving the temperature controllability, improve productivity, reduce soldering defects, An object of the present invention is to provide a substrate heating device capable of stably protecting the quality of elements.
問題点を解決するための手段 上記問題点を解決するために本発明の基板加熱装置
は、加熱装置本体と、前記加熱装置本体内にほぼ半円筒
状で曲率中心側の面が鏡面であり、前記鏡面側を所定距
離を隔てて対向して設けた1対の反射鏡体と、前記反射
鏡体の焦点付近に配設した柱状の発熱体と、対向する1
対の前記反射鏡体の間でかつ前記発熱体の近傍で基板を
保持する基板保持部と、前記基板保持部を前記反射鏡体
に沿って移動させる基板搬送部とからなり、さらに必要
に応じて前記基板保持部と前記反射鏡体との間の空間
に、前記保持部で保持する基板にほぼ平行に近接して、
少なくとも1個の孔を有する熱線の非透過材料からなる
マスクを設けたものである。Means for Solving the Problems In order to solve the above problems, the substrate heating apparatus of the present invention is a heating apparatus main body, and the surface of the heating apparatus main body on the side of the center of curvature is a semi-cylindrical shape and is a mirror surface. A pair of reflecting mirror bodies, which are provided so as to face each other on the mirror surface side with a predetermined distance therebetween, and a columnar heating element that is disposed near the focal point of the reflecting mirror body,
A substrate holding unit that holds a substrate between the pair of reflecting mirror bodies and near the heating element, and a substrate transporting unit that moves the substrate holding unit along the reflecting mirror body, and further if necessary. In the space between the substrate holder and the reflecting mirror body in close proximity to the substrate held by the holder,
A mask made of a heat ray impermeable material having at least one hole is provided.
作用 上記した構成によって、反射鏡体により焦点位置にあ
る発熱体からの輻射熱を、高効率に平行熱線として反射
して基板保持部上の基板に照射し、同時に複数庫の基板
加熱を高効率に行い、さらにマスクを適用することで、
基板上の温度分布を効果的に均一化する基板加熱を行う
ことができる。Action With the above-described configuration, the radiant heat from the heating element at the focal position by the reflecting mirror body is reflected with high efficiency as parallel heat rays to irradiate the substrate on the substrate holding portion, and at the same time, the substrate heating of a plurality of chambers is made highly efficient. By doing and applying a mask,
It is possible to perform substrate heating that effectively equalizes the temperature distribution on the substrate.
実施例 以下本発明の一実施例について、図面を参照しながら
説明する。Embodiment An embodiment of the present invention will be described below with reference to the drawings.
第1図は、本発明の第1の実施例における基板加熱装
置を示す一部切欠き斜視図である。11は加熱装置本体、
12は基板、13は反射鏡体、14は発熱体、15は基板保持
部、16は基板搬送部、17は加熱装置本体の出入口、18は
シャッタである。加熱装置本体11の内部に、ほぼ半円筒
状の曲率を有し、その曲率中心側の面が鏡面状(以下こ
の面を鏡面という)の一対の反射鏡体13が、前記鏡面13
a同士を所定間隔を隔てて平行に互いに対向して配設さ
れ、前記反射鏡体13のほぼ焦点位置に、円柱状の発熱体
14が前記反射鏡体13の長手方向と平行に設けられてい
る。前記一対の反射鏡体13と発熱体14との間の空間にお
いて、複数個の基板12を一定間隔をもって2段に保持す
る基板保持部15が設置されており、この基板保持部15は
さらに基板搬送部16と連結されて、加熱装置本体11の長
手方向に搬送される。前記加熱装置本体11には断熱機能
が付与されており、前記基板搬送部16による搬送方向の
前後端に出入口17がそれぞれ1ケ所設けられ、さらに前
記出入口17にはシャッタ18が取付けられている。FIG. 1 is a partially cutaway perspective view showing a substrate heating apparatus according to a first embodiment of the present invention. 11 is the heating device body,
Reference numeral 12 is a substrate, 13 is a reflecting mirror body, 14 is a heating element, 15 is a substrate holding portion, 16 is a substrate transporting portion, 17 is an entrance / exit of a heating device main body, and 18 is a shutter. Inside the heating device main body 11, a pair of reflecting mirror bodies 13 having a substantially semi-cylindrical curvature and having a mirror-like surface on the center side of the curvature (hereinafter, this surface is referred to as a mirror surface) are
a-arranged in parallel with each other at a predetermined interval so as to face each other, and at a substantially focal position of the reflecting mirror body 13, a cylindrical heating element.
Reference numeral 14 is provided parallel to the longitudinal direction of the reflecting mirror body 13. In the space between the pair of reflecting mirror bodies 13 and the heat generating body 14, there is installed a substrate holding part 15 for holding a plurality of substrates 12 in two stages at regular intervals. It is connected to the transfer unit 16 and transferred in the longitudinal direction of the heating device main body 11. The heating device main body 11 is provided with a heat insulating function, one entrance 17 is provided at each of front and rear ends in the carrying direction of the substrate carrying section 16, and a shutter 18 is attached to the entrance 17.
上記の基板加熱装置について、第2図により加熱に関
する動作原理を説明する。半円筒状の前記反射鏡体13の
焦点位置に、発熱体14の中心を設置して加熱を行なう
と、特に輻射熱の形で与えられる熱線成分は、光と同様
に反射鏡体13の表面で高効率に反射され、以降平行光
(熱)線として照射される。したがって前記反射体13と
発熱体14との間に置かれ、それぞれの加熱面を反射鏡体
13の鏡面13aと対向するように配置して複数個の基板12
は、ほぼその法線方向から加熱されることになり、複数
個の基板12の加熱を同時に、しかも発熱体14の数を最少
限にして実現できることになる。また、前記反射鏡体13
で反射した後、基板12に照射されなかった熱線は、反対
側の反射鏡体13に当って再度反射されて基板13を照射す
る。したがってエネルギーの損失を最少にすることもで
きる。以上の点で、従来の炉において炉壁の外部に吸収
され、その結果不必要な炉壁の昇温をきたしていた乱反
射熱線を、効果的に再利用しているのである。前記基板
保持部15および基板搬送部16からなる、いわゆる基板搬
送系は、加熱完了した基板12の群を加熱装置本体11の外
部へ間欠的に搬出し、一方で新しい未処理の基板12の群
を加熱装置11の内部に搬入するよう動作し、高能率で基
板12の群を加熱することができる。前記出入口17に設け
られるシャッタ18は、これら基板12の群の搬出入時のみ
開放できるようになっており、加熱装置本体11の雰囲気
温度の低下や、出入口17の近傍での雰囲気温度低下を極
力抑えることができる。また、積極的に基板12の予熱を
図るためには、前記加熱装置本体11の雰囲気温度を適切
に設定するヒータなどを設けることにより、その効率を
さらに大幅に向上することができる。With respect to the above-described substrate heating device, the operation principle regarding heating will be described with reference to FIG. When the center of the heating element 14 is installed and heated at the focal position of the semi-cylindrical reflecting mirror body 13, the heat ray component given in the form of radiant heat is generated on the surface of the reflecting mirror body 13 in the same manner as light. It is reflected with high efficiency, and thereafter is emitted as parallel light (heat) rays. Therefore, it is placed between the reflector 13 and the heating element 14, and each heating surface is a reflecting mirror body.
A plurality of substrates 12 are arranged so as to face the mirror surface 13a of 13
Will be heated almost in the normal direction, and the plurality of substrates 12 can be heated at the same time and the number of heating elements 14 can be minimized. Further, the reflecting mirror body 13
After being reflected by, the heat rays that have not been applied to the substrate 12 hit the reflecting mirror body 13 on the opposite side and are reflected again to irradiate the substrate 13. Therefore, energy loss can be minimized. From the above points, the diffuse reflection heat rays that have been absorbed to the outside of the furnace wall in the conventional furnace, resulting in unnecessary heating of the furnace wall, are effectively reused. The so-called substrate transfer system including the substrate holding unit 15 and the substrate transfer unit 16 intermittently carries out a group of heated substrates 12 to the outside of the heating apparatus main body 11, while a group of new unprocessed substrates 12 is carried out. Is operated so as to be loaded into the heating device 11, and the group of substrates 12 can be heated with high efficiency. The shutter 18 provided in the entrance / exit 17 can be opened only when the group of these substrates 12 is carried in / out, and the atmosphere temperature of the heating device main body 11 is lowered and the atmosphere temperature near the entrance 17 is lowered as much as possible. Can be suppressed. Further, in order to positively preheat the substrate 12, by providing a heater or the like for appropriately setting the ambient temperature of the heating device body 11, the efficiency thereof can be further greatly improved.
第3図は本発明の第2の実施例における基板加熱装置
の概略横断面図である。なお第1図および第2図と同一
符号は同一部材を示す。この第2の実施例は、第1図お
よび第2図に示す実施例の基板加熱装置の基板保持部15
の上に保持された基板12と反射鏡体13との間に、基板12
とほぼ平行に近接してマスク19を設置している。前記マ
スク19は、発熱体14から発せられた熱線のうち、基板12
へ照射される輻射熱成分を適当に絞り調整する機能を有
し、たとえば金属板のような熱線の非透過性材料で反射
率の高いものを選択して、第4図に例示するように、大
小の孔20を設けている。前記マスク19に設ける孔20の位
置、大きさ、数などは、輻射熱量をその直下における基
板12の上の素子の熱容量、熱特性、分布密度などに応じ
て適宜調整して決定すればよい。前記マスク19を設置す
ることにより、熱容量分布を有する基板12を一様に加熱
できて、たとえば半田付け不良が著しく低減でき、かつ
熱に弱い部品を保護できて部品の損傷も少ない。FIG. 3 is a schematic cross-sectional view of the substrate heating apparatus according to the second embodiment of the present invention. The same reference numerals as those in FIGS. 1 and 2 denote the same members. This second embodiment corresponds to the substrate holder 15 of the substrate heating apparatus of the embodiment shown in FIGS. 1 and 2.
Between the substrate 12 and the reflecting mirror body 13 held on the substrate 12,
A mask 19 is installed almost parallel to and close to. The mask 19 is a substrate 12 among the heat rays emitted from the heating element 14.
It has a function of appropriately adjusting the radiant heat component radiated to the window, and selects a heat ray non-transmissive material such as a metal plate having a high reflectance, and as shown in FIG. The hole 20 is provided. The position, size, number, etc. of the holes 20 provided in the mask 19 may be determined by appropriately adjusting the amount of radiant heat in accordance with the heat capacity, thermal characteristics, distribution density, etc. of the elements on the substrate 12 immediately below. By providing the mask 19, the substrate 12 having a heat capacity distribution can be uniformly heated, for example, soldering failure can be significantly reduced, and heat-sensitive parts can be protected and damage to the parts is small.
発明の効果 以上のように本発明の基板加熱装置は、最少限の発熱
体で多数の基板を同時に、かつ高効率で加熱することが
でき、しかもマスクを用いれば、熱容量分布を有する基
板を高精度に調整して加熱することができて、半田付け
不良の発生や部品の損傷を大幅に低減することができ、
異種の基板の加熱を同時に行なうことも実現できる。EFFECTS OF THE INVENTION As described above, the substrate heating apparatus of the present invention can simultaneously heat a large number of substrates with a minimum number of heating elements and with high efficiency. It can be adjusted and heated accurately, and it is possible to greatly reduce the occurrence of soldering defects and damage to parts,
It is also possible to simultaneously heat different types of substrates.
第1図は本発明の第1の実施例における基板加熱装置の
一部切欠き斜視図、第2図は同基板加熱装置の概略横断
面図、第3図は本発明の第2の実施例における基板加熱
装置の概略横断面図、第4図は同基板加熱装置のマスク
の斜視図、第5図は従来例における基板加熱装置の概略
横断面図である。 11……加熱装置本体、12……基板、13……反射鏡体、14
……発熱体、15……基板保持部、16……基板搬送部、17
……出入口、18……シャッタ、19……マスク。FIG. 1 is a partially cutaway perspective view of a substrate heating apparatus according to a first embodiment of the present invention, FIG. 2 is a schematic cross-sectional view of the substrate heating apparatus, and FIG. 3 is a second embodiment of the present invention. 4 is a schematic cross-sectional view of the substrate heating apparatus in FIG. 4, FIG. 4 is a perspective view of a mask of the substrate heating apparatus, and FIG. 5 is a schematic cross-sectional view of the substrate heating apparatus in the conventional example. 11 …… Heating device main body, 12 …… Substrate, 13 …… Reflecting mirror body, 14
...... Heating element, 15 …… Substrate holding unit, 16 …… Substrate transfer unit, 17
…… Doorway, 18 …… Shutter, 19 …… Mask.
Claims (2)
ぼ半円筒状で曲率中心側の面が鏡面であり、前記鏡面側
を所定距離を隔てて対向して設けた1対の反射鏡体と、
前記反射鏡体の焦点付近に配設した柱状の発熱体と、対
向する1対の前記反射鏡体の間でかつ前記発熱体の近傍
で基板を保持する基板保持部と、前記基板保持部を前記
反射鏡体に沿って移動させる基板搬送部とからなる基板
加熱装置。1. A heating device main body, and a pair of reflecting mirrors provided in the heating device main body, the surfaces having a substantially semi-cylindrical shape and having a center of curvature being mirror surfaces, and the mirror surface sides facing each other with a predetermined distance therebetween. Body and
A columnar heating element arranged near the focal point of the reflecting mirror body; a substrate holding section for holding a substrate between a pair of facing reflecting mirror bodies and in the vicinity of the heating element; and a substrate holding section. A substrate heating device comprising a substrate transfer unit that moves along the reflecting mirror body.
前記保持部で保持する基板にほぼ平行に近接して、少な
くとも1個の孔を有する熱線の非透過材料からなるマス
クを設けている特許請求の範囲第1項記載の基板加熱装
置。2. A space between the substrate holder and the reflecting mirror body,
2. The substrate heating apparatus according to claim 1, wherein a mask made of a heat ray non-transmissive material having at least one hole is provided in the vicinity of the substrate held by the holding portion substantially in parallel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18297787A JPH084933B2 (en) | 1987-07-22 | 1987-07-22 | Substrate heating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18297787A JPH084933B2 (en) | 1987-07-22 | 1987-07-22 | Substrate heating device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6427772A JPS6427772A (en) | 1989-01-30 |
JPH084933B2 true JPH084933B2 (en) | 1996-01-24 |
Family
ID=16127611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18297787A Expired - Fee Related JPH084933B2 (en) | 1987-07-22 | 1987-07-22 | Substrate heating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH084933B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002102260A (en) | 2000-09-28 | 2002-04-09 | Nipro Corp | Shunt tube inside artery and its using method |
CN103071876B (en) * | 2013-01-05 | 2015-09-02 | 烟台睿创微纳技术有限公司 | A kind of welded encapsulation method and apparatus |
-
1987
- 1987-07-22 JP JP18297787A patent/JPH084933B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS6427772A (en) | 1989-01-30 |
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LAPS | Cancellation because of no payment of annual fees |