JPH0846280A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPH0846280A JPH0846280A JP17446494A JP17446494A JPH0846280A JP H0846280 A JPH0846280 A JP H0846280A JP 17446494 A JP17446494 A JP 17446494A JP 17446494 A JP17446494 A JP 17446494A JP H0846280 A JPH0846280 A JP H0846280A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- light emitting
- laser chip
- emitting device
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H01S5/405—Two-dimensional arrays
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、複数の半導体レーザチ
ップを放熱のためのヒートシンク上に積み上げて組立て
る、通称スタック組立てになる半導体発光装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, which is commonly referred to as a stack assembly, in which a plurality of semiconductor laser chips are stacked and assembled on a heat sink for heat dissipation.
【０００２】[0002]
【従来の技術】図１３は従来のスタック組立てになる半
導体発光装置を示す正面図、図１４は半導体レーザチッ
プの構造を示す斜視図である。図において、１は半導体
レーザチップ、２はｎ型ＧａＡｓからなる基板、３はｎ
型Ａｌ0.3Ｇａ0.7Ａｓからなるクラッド層、４はアンド
ープＧａＡｓからなる活性層、５はｐ型Ａｌ0.3Ｇａ0.7
Ａｓからなるクラッド層、６はｐ型ＧａＡｓからなるオ
ーミックコンタクト層、７は金属電極、８は発光領域、９
はプロトンを注入する高抵抗領域、１０はヒートシン
ク、１１はＰｂＳｎからなるハンダ、１２は金線からな
るワイヤーボンディング部で、半導体レーザチップ１の
大きさは、例えば、幅０．５ｍｍ、長さ０．５ｍｍ、厚
さ０．１ｍｍといった微小な寸法のものである。2. Description of the Related Art FIG. 13 is a front view showing a conventional semiconductor light emitting device assembled in a stack, and FIG. 14 is a perspective view showing the structure of a semiconductor laser chip. In the figure, 1 is a semiconductor laser chip, 2 is a substrate made of n-type GaAs, and 3 is n.
-Type Al 0.3 Ga 0.7 As clad layer, 4 is an undoped GaAs active layer, and 5 is p-type Al 0.3 Ga 0.7
A cladding layer made of As, 6 an ohmic contact layer made of p-type GaAs, 7 a metal electrode, 8 a light emitting region, 9
Is a high resistance region for injecting protons, 10 is a heat sink, 11 is solder made of PbSn, and 12 is a wire bonding portion made of gold wire. The size is as small as 0.5 mm and the thickness is 0.1 mm.
【０００３】上記半導体レーザチップの動作について説
明する。上下の金属電極７間に電圧を印加すると、高抵
抗領域９以外の活性層４にプロトンが注入され電流が流
れて発光し、発光した光は発光領域８へ導波され発光領
域８の端面に垂直方向に出射される。The operation of the above semiconductor laser chip will be described. When a voltage is applied between the upper and lower metal electrodes 7, protons are injected into the active layer 4 other than the high resistance region 9 and a current flows to emit light, and the emitted light is guided to the light emitting region 8 and is directed to the end face of the light emitting region 8. It is emitted in the vertical direction.
【０００４】上記図１３に示した従来のスタック組立て
になる半導体発光装置は、微小な半導体レーザチップ１
を放熱のためのヒートシンク１０上に、例えば、４段に
積み上げてハンダ１１で接着し、金線からなるワイヤー
ボンディング部１２とヒートシンク１０の間に電圧を印
加して半導体レーザチップ１を動作させ、半導体レーザ
チップ１が１個の場合の４倍の光出力を出すことができ
るようにしている。The conventional semiconductor light emitting device assembled by stacking shown in FIG. 13 is a minute semiconductor laser chip 1.
On the heat sink 10 for heat dissipation, for example, four layers are stacked and bonded with solder 11, and the semiconductor laser chip 1 is operated by applying a voltage between the wire bonding portion 12 made of a gold wire and the heat sink 10. The semiconductor laser chip 1 is designed to be capable of producing a light output that is four times as large as that of a single semiconductor laser chip 1.
【０００５】しかし、上記のスタック組立てにおいて
は、微小な半導体レーザチップ１を安定に積み上げるこ
とが困難であった。However, in the above stack assembly, it is difficult to stably stack the minute semiconductor laser chips 1.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、上記のよう
な問題を解決して、安定したスタック組立てができると
ともに、適正な光出力が得られる半導体発光装置を提供
することを目的とするものである。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above problems and to provide a semiconductor light emitting device capable of performing stable stack assembly and obtaining an appropriate light output. Is.
【０００７】[0007]
【課題を解決するための手段】請求項１に係る発明は、
ヒートシンク、このヒートシンク上に複数段に積み上げ
た半導体レーザチップを備え、上記半導体レーザチップ
の上段の半導体レーザチップをこの下段にある２個の半
導体レーザチップにまたがるように積み上げたものであ
る。The invention according to claim 1 is
A heat sink and semiconductor laser chips stacked in a plurality of stages on the heat sink are provided, and the semiconductor laser chips on the upper stage of the semiconductor laser chip are stacked so as to extend over the two semiconductor laser chips on the lower stage.
【０００８】請求項２に係る発明は、請求項１記載の半
導体発光装置において、上段の半導体レーザチップの発
光領域数が下段の半導体レーザチップの発光領域数より
多いものである。According to a second aspect of the present invention, in the semiconductor light emitting device according to the first aspect, the number of light emitting regions of the upper semiconductor laser chip is larger than that of the lower semiconductor laser chip.
【０００９】請求項３に係る発明は、請求項１記載の半
導体発光装置において、上段の半導体レーザチップの発
光領域幅が下段の半導体レーザチップの発光領域幅より
広いものである。According to a third aspect of the present invention, in the semiconductor light emitting device according to the first aspect, the emission region width of the upper semiconductor laser chip is wider than the emission region width of the lower semiconductor laser chip.
【００１０】請求項４に係る発明は、請求項１、２また
は３記載の半導体発光装置において、下段の半導体レー
ザチップの閾値電流が上段の半導体レーザチップの閾値
電流より小さいものである。According to a fourth aspect of the present invention, in the semiconductor light emitting device according to the first, second or third aspect, the threshold current of the lower semiconductor laser chip is smaller than that of the upper semiconductor laser chip.
【００１１】請求項５に係る発明は、ヒートシンク、こ
のヒートシンク上に複数段に積み上げた半導体レーザチ
ップを備え、下段に上記半導体レーザチップと同寸法の
ダミーチップを配設し、上記半導体レーザチップのう
ち、上段の半導体レーザチップをこの下段にある上記ダ
ミーチップにまたがるように積み上げたものである。According to a fifth aspect of the present invention, there is provided a heat sink, a semiconductor laser chip stacked on the heat sink in a plurality of stages, and a dummy chip having the same size as the semiconductor laser chip is arranged in the lower stage. Of these, the upper semiconductor laser chips are stacked so as to straddle the dummy chips in the lower stage.
【００１２】請求項６に係る発明は、ヒートシンク、こ
のヒートシンク上に複数段に積み上げた半導体レーザチ
ップを備え、上記ヒートシンクの上記半導体レーザチッ
プを積み上げる面には上記半導体レーザチップの厚さと
同寸法の段差を有し、上記半導体レーザチップの上段の
半導体レーザチップを上記段差にまたがるように積み上
げたものである。A sixth aspect of the present invention includes a heat sink and semiconductor laser chips stacked on the heat sink in a plurality of stages. A semiconductor laser chip having a step is stacked so that the semiconductor laser chips on the upper stage of the semiconductor laser chip straddle the step.
【００１３】請求項７に係る発明は、請求項６記載の半
導体発光装置において、段差が凸、凹あるいは階段状に
形成したものである。According to a seventh aspect of the present invention, in the semiconductor light emitting device according to the sixth aspect, the step is formed in a convex, concave or stepped shape.
【００１４】請求項８に係る発明は、請求項５または請
求項７記載の半導体発光装置において、凸状の段差、階
段状の段差あるいはダミーチップの両側に半導体レーザ
チップが反転して配設され直列に接続されているもので
ある。According to an eighth aspect of the present invention, in the semiconductor light emitting device according to the fifth or seventh aspect, the semiconductor laser chips are arranged upside down on both sides of a convex step, a stepped step, or a dummy chip. They are connected in series.
【００１５】請求項９に係る発明は、請求項５または請
求項７記載の半導体発光装置において、凸状の段差、階
段状の段差あるいはダミーチップの両側に導電型の異な
る半導体レーザチップが配設され直列に接続されている
ことを特徴とする。According to a ninth aspect of the present invention, in the semiconductor light emitting device according to the fifth or seventh aspect, semiconductor laser chips having different conductivity types are arranged on both sides of a convex step, a stepped step, or a dummy chip. And are connected in series.
【００１６】[0016]
【作用】請求項１、５および６に係る発明によれば、半
導体レーザチップを積み上げる下段の面積が広いので、
安定にしかも多数積み上げることができる。According to the inventions of claims 1, 5 and 6, since the area of the lower stage for stacking the semiconductor laser chips is large,
It is possible to stack many in a stable manner.
【００１７】請求項２、３、５、６および７に係る発明
によれば、半導体レーザチップの発光領域の電流密度を
同程度にすることができ、適正な光出力が得られる。According to the inventions of claims 2, 3, 5, 6 and 7, the current density in the light emitting region of the semiconductor laser chip can be made approximately the same and an appropriate light output can be obtained.
【００１８】請求項４に係る発明によれば、下段の方で
電流が小さくなっている積み上げに対応させて、下段の
半導体レーザチップの閾値電流が上段の半導体レーザチ
ップの閾値電流より小さいものとしているので、各半導
体レーザチップから出射される光出力の差を小さくする
ことができる。According to the invention of claim 4, the threshold current of the lower semiconductor laser chip is smaller than the threshold current of the upper semiconductor laser chip in response to the stacking in which the current is smaller in the lower stage. Therefore, the difference in the light output emitted from each semiconductor laser chip can be reduced.
【００１９】請求項８および９に係る発明によれば、各
半導体レーザチップを直列に接続することができるの
で、小さい電流で半導体発光装置を駆動することができ
る。According to the inventions of claims 8 and 9, since the semiconductor laser chips can be connected in series, the semiconductor light emitting device can be driven with a small current.
【００２０】[0020]
実施例１．図１は、本発明の一実施例を示す正面図であ
る。図に示すように、半導体レーザチップ１を導電性の
ヒートシンク１０の上に３段に積み上げ、１段目は３
個、２段目は１段目の各２個にまたがるように２個を載
置して積み上げ、３段目は２段目の２個にまたがるよう
に１個を載置して積み上げ、ハンダ１１で各段を電気的
かつ機械的に接続し、最上段の半導体レーザチップ１に
電圧を供給するための金線のワイヤーボンディング部１
２を接続する。Example 1. FIG. 1 is a front view showing an embodiment of the present invention. As shown in the figure, the semiconductor laser chips 1 are stacked on the conductive heat sink 10 in three steps, and the first step is three steps.
Place the two pieces on top of each other so that the second row spans each two pieces of the first row, and stack the one piece on the second row so that it spans the two pieces of the second row. A wire bonding portion 1 of a gold wire for electrically and mechanically connecting the stages at 11 and supplying a voltage to the uppermost semiconductor laser chip 1.
2 is connected.
【００２１】半導体レーザチップ１を下の段の各２個に
またがるように載置して積み上げるので、載置する面積
が広く、安定にスタック組立てができる半導体発光装置
が得られる。Since the semiconductor laser chips 1 are mounted and piled up so as to straddle each two lower layers, a semiconductor light emitting device having a large mounting area and capable of stable stack assembly can be obtained.
【００２２】なお、本実施例においては、２段でもよ
く、４段以上でも安定に積み上げることができる。It should be noted that in this embodiment, two or more layers can be stably stacked.
【００２３】実施例２．実施例１において、電流はワイ
ヤーボンディング部１２から供給され、各半導体レーザ
チップ１から導電性のヒートシンク１０へ流れる。ここ
で、下段ほど半導体レーザチップ１の数が多いので１個
当たりの電流が小さくなり、出射される光出力が小さく
なる欠点がある。Embodiment 2 FIG. In the first embodiment, current is supplied from the wire bonding portion 12 and flows from each semiconductor laser chip 1 to the conductive heat sink 10. Here, since the number of semiconductor laser chips 1 is larger in the lower stage, there is a drawback that the current per one becomes small and the light output emitted becomes small.
【００２４】図２は本発明の第二の実施例を説明するた
めの平面図で、上記のような実施例１の欠点を改良する
半導体発光装置の構成を示すものである。図に示すよう
に、実施例１と同様、半導体レーザチップ１を導電性の
ヒートシンク１０の上に２段に積み上げ、１段目は２
個、２段目は１段目の２個にまたがるように載置して積
み上げ、２段目の半導体レーザチップ１の発光領域８を
２個設けたものである。FIG. 2 is a plan view for explaining the second embodiment of the present invention, and shows the structure of a semiconductor light emitting device which improves the above-mentioned drawbacks of the first embodiment. As shown in the drawing, as in the first embodiment, the semiconductor laser chips 1 are stacked on the conductive heat sink 10 in two stages, and the first stage has two stages.
The second and second stages are placed and stacked so as to straddle the two of the first stage, and two light emitting regions 8 of the semiconductor laser chip 1 of the second stage are provided.
【００２５】このように、２段目の半導体レーザチップ
１の発光領域８を２個設けたことによって、各発光領域
８に流れる電流は同程度となって、すべての発光領域８
から適性な光出力を得ることができるようになる。As described above, by providing the two light emitting regions 8 of the semiconductor laser chip 1 of the second stage, the currents flowing through the respective light emitting regions 8 become approximately the same, and all the light emitting regions 8 are provided.
It will be possible to obtain a proper light output from.
【００２６】本実施例において２段に積み上げた例を示
したが、発光領域８の個数を２個以上設けた半導体レー
ザチップ１を組合わせることによって、多段に積み上
げ、しかも適正な光出力の半導体発光装置を得ることが
できる。In the present embodiment, an example in which the semiconductor laser chips 1 are stacked in two stages has been shown. However, by combining the semiconductor laser chips 1 having two or more light emitting regions 8, the semiconductor laser chips 1 are stacked in multiple stages and have a proper optical output. A light emitting device can be obtained.
【００２７】実施例３．図３は本発明の第三の実施例を
示す平面図である。図に示すように、実施例１と同様、
半導体レーザチップ１を導電性のヒートシンク１０の上
に２段に積み上げ、１段目は２個、２段目は１段目の２
個にまたがるように載置して積み上げ、２段目の半導体
レーザチップ１の発光領域８０を広くし、下段の半導体
レーザチップ１の発光領域８の幅の２倍の幅にする。こ
のような構成とすることによって、下段と上段の発光領
域８に流れる電流は同程度となり、どの発光領域８も適
正な光出力を有するようにすることができる。Embodiment 3 FIG. FIG. 3 is a plan view showing a third embodiment of the present invention. As shown in FIG.
The semiconductor laser chip 1 is stacked on the conductive heat sink 10 in two stages, the first stage is two, and the second stage is the first stage.
The light emitting region 80 of the semiconductor laser chip 1 in the second stage is widened so that the light emitting region 80 of the semiconductor laser chip 1 in the second stage is twice as wide as the width of the light emitting region 8 in the lower semiconductor laser chip 1. With such a configuration, the currents flowing in the lower and upper light emitting regions 8 are approximately the same, and any light emitting region 8 can have an appropriate light output.
【００２８】本実施例において、発光領域８０の幅を種
々変えた半導体レーザチップ１を組合わせることによっ
て、３段以上に積み上げ、しかも適正な光出力の半導体
発光装置を得ることもできる。In this embodiment, by combining the semiconductor laser chips 1 in which the width of the light emitting region 80 is variously changed, it is possible to obtain a semiconductor light emitting device which is stacked in three or more stages and has an appropriate light output.
【００２９】実施例４．図４は本発明の第四の実施例を
示す平面図である。図に示すように、実施例１と同様、
半導体レーザチップ１を導電性のヒートシンク１０の上
に３段に積み上げ、１段目は３個、２段目は１段目の各
２個にまたがるように２個を積み上げ、３段目は２段目
の２個にまたがるように１個を積み上げる。この時、半
導体レーザチップ１の発光領域８１、８２および８０は
それぞれ、歪多重量子井戸構造、無歪多重量子井戸構造
および通常のＧａＡｓバルク構造となっている。Example 4. FIG. 4 is a plan view showing a fourth embodiment of the present invention. As shown in FIG.
The semiconductor laser chips 1 are stacked on the conductive heat sink 10 in three steps, the first step is three, and the second step is two so as to extend over each two of the first step. Stack one so that it straddles the two tiers. At this time, the light emitting regions 81, 82 and 80 of the semiconductor laser chip 1 have a strained multiple quantum well structure, a strainless multiple quantum well structure and a normal GaAs bulk structure, respectively.
【００３０】バルク構造の発光領域８０よりも無歪多重
量子井戸構造の発光領域８２の方が閾値電流が小さく、
かつ、発光効率が高い。さらに、無歪多重量子井戸構造
の発光領域８２よりも歪多重量子井戸構造の発光領域８
１の方が閾値電流が小さく、かつ、発光効率が高い。従
って、上段、中段および下段の順に電流が小さくなって
いる積み上げに対応させることができ、各半導体レーザ
チップ１から出射される光出力の差を小さくすることが
できる。The threshold current of the light emitting region 82 of the strain-free multiple quantum well structure is smaller than that of the light emitting region 80 of the bulk structure.
Moreover, the luminous efficiency is high. Further, the light emitting region 8 of the strained multiple quantum well structure is more than the light emitting region 8 of the strainless multiple quantum well structure.
No. 1 has a smaller threshold current and higher luminous efficiency. Therefore, it is possible to deal with the stacking in which the current decreases in the order of the upper stage, the middle stage and the lower stage, and the difference in the optical output emitted from each semiconductor laser chip 1 can be reduced.
【００３１】なお、本実施例においては３段に積み上げ
る例を示したが、上記実施例２または実施例３と本実施
例とを組合わせることによって、４段以上にすることも
できる。In this embodiment, an example of stacking in three stages is shown, but it is also possible to combine four or more stages by combining the second or third embodiment with the present embodiment.
【００３２】実施例５．図５は本発明の第五の実施例を
示す平面図である。図に示すように、第１段目に半導体
レーザチップ１と同一寸法を有する導電性の材料からな
るダミーチップ１３を配設し、第２段目は半導体レーザ
チップ１とダミーチップ１３をまたぐように積み上げ
る。Example 5. FIG. 5 is a plan view showing a fifth embodiment of the present invention. As shown in the figure, a dummy chip 13 having the same dimensions as the semiconductor laser chip 1 and made of a conductive material is arranged in the first stage, and the second stage is arranged so as to straddle the semiconductor laser chip 1 and the dummy chip 13. Pile up.
【００３３】本実施例によれば、半導体レーザチップ１
を下の段の半導体レーザチップ１とダミーチップ１３に
またがるように載置して積み上げるので、載置する面積
が広く、安定したスタック組立てによって半導体発光装
置を製造することができるとともに、各段の半導体レー
ザチップ１の個数を同じにすることができるので、各半
導体レーザチップ１の発光領域８に流れる電流を同じに
することができ、光出力を適正なものとすることができ
る。According to this embodiment, the semiconductor laser chip 1
Are mounted and stacked so as to straddle the semiconductor laser chip 1 and the dummy chip 13 in the lower stage, so that the mounting area is wide and the semiconductor light emitting device can be manufactured by stable stack assembly, and at the same time, Since the number of semiconductor laser chips 1 can be the same, the current flowing through the light emitting region 8 of each semiconductor laser chip 1 can be the same, and the optical output can be made appropriate.
【００３４】また、本実施例においては１個のダミーチ
ップ１３を使用して２段に積み上げる例を示したが、複
数個のダミーチップ１３を使用することによって、３段
以上に積み上げ、しかも光出力を適正なものとすること
ができる。In this embodiment, one dummy chip 13 is used for stacking in two stages. However, by using a plurality of dummy chips 13, stacking is performed in three or more stages, and the optical chip The output can be optimized.
【００３５】実施例６．図６は本発明の第六の実施例を
示す平面図である。図に示すように、絶縁性のヒートシ
ンク１０に段差１４を設け、段差１４が形成する下面に
配置した下段の半導体レーザチップ１と段差１４が形成
する上面とをまたぐように上段の半導体レーザチップ１
を積み上げ、上段の半導体レーザチップ１にワイヤーボ
ンディング部１２を並列に接続し、下段のヒートシンク
１０に接する面にヒートシンク用金属電極１５を配置
し、ワイヤーボンディング部１２を接続する。Example 6. FIG. 6 is a plan view showing a sixth embodiment of the present invention. As shown in the figure, a step 14 is provided on an insulating heat sink 10, and the upper semiconductor laser chip 1 is arranged so as to straddle the lower semiconductor laser chip 1 arranged on the lower surface formed by the step 14 and the upper surface formed by the step 14.
, The wire bonding portions 12 are connected in parallel to the upper semiconductor laser chip 1, the heat sink metal electrode 15 is disposed on the surface in contact with the lower heat sink 10, and the wire bonding portions 12 are connected.
【００３６】本実施例によれば、半導体レーザチップ１
を段差１４が形成する下面に載置した半導体レーザチッ
プ１と段差１４が形成する上面にまたがるように載置し
て積み上げるので、載置する面積が広く、安定したスタ
ック組立てによって半導体発光装置を製造することがで
きるとともに、各段の半導体レーザチップ１の個数を同
じにすることができるので、各半導体レーザチップ１の
発光領域８に流れる電流を同じにすることができ、光出
力を適正なものとすることができる。According to this embodiment, the semiconductor laser chip 1
The semiconductor laser chip 1 mounted on the lower surface formed by the step 14 and the semiconductor laser chip 1 mounted on the upper surface formed by the step 14 are piled up, so that the mounting area is wide and the semiconductor light emitting device is manufactured by stable stack assembly. In addition, since the number of semiconductor laser chips 1 in each stage can be the same, the current flowing in the light emitting region 8 of each semiconductor laser chip 1 can be the same, and the light output is appropriate. Can be
【００３７】また、本実施例においては１個の段差１４
を使用して２段に積み上げる例を示したが、図７または
図８に示すように凸部または凹部を設けて両側に段差を
設けてもよく、また、段差１４を階段状にすることによ
って、３段以上に積み上げることができ、しかも光出力
を適正なものとすることができる。なお、図７および図
８において、それぞれ図９および図１０のようにヒート
シンク１０を導電性材料で構成することもできる。Further, in this embodiment, one step 14
Although the example of stacking in two steps by using is shown, a convex portion or a concave portion may be provided to provide steps on both sides as shown in FIG. 7 or FIG. It can be stacked in three or more stages, and the light output can be made appropriate. 7 and 8, the heat sink 10 may be made of a conductive material as shown in FIGS. 9 and 10, respectively.
【００３８】また、本実施例では、並列に接続されてい
るが、図１１に示すように、段差１４の片側にある半導
体レーザチップ１を反転させて載置し、直列に接続する
ことによって、少ない電流で半導体レーザ１を駆動する
ことができる。In this embodiment, the semiconductor laser chips 1 are connected in parallel, but as shown in FIG. 11, the semiconductor laser chip 1 on one side of the step 14 is inverted, placed, and connected in series. The semiconductor laser 1 can be driven with a small current.
【００３９】また、直列に接続するためには、図１２に
示すように、段差１４の一方にｎ型基板の半導体レーザ
チップ１を配置し、他方に導電型の異なるｐ型基板の半
導体レーザチップ１６を配置してもよい。Further, in order to connect in series, as shown in FIG. 12, the semiconductor laser chip 1 of the n-type substrate is arranged on one side of the step 14 and the semiconductor laser chip of the p-type substrate having a different conductivity type on the other side. 16 may be arranged.
【００４０】また、本実施例は、上記実施例５のダミー
チップ１３を併せ用いてもよい。Further, in this embodiment, the dummy chip 13 of the above-mentioned fifth embodiment may be used together.
【００４１】[0041]
【発明の効果】請求項１、５および６に係る発明によれ
ば、半導体レーザチップを積み上げる下段の面積が広い
ので、安定にしかも多数積み上げることができる。According to the inventions of claims 1, 5, and 6, since the area of the lower stage for stacking the semiconductor laser chips is large, it is possible to stack a large number of them stably.
【００４２】請求項２、３、５、６および７に係る発明
によれば、半導体レーザチップの発光領域の電流密度を
同程度にすることができ、適正な光出力が得られる。According to the inventions of claims 2, 3, 5, 6 and 7, the current density in the light emitting region of the semiconductor laser chip can be made approximately the same and an appropriate light output can be obtained.
【００４３】請求項４に係る発明によれば、下段の方で
電流が小さくなっている積み上げに対応させて、下段の
半導体レーザチップの閾値電流が上段の半導体レーザチ
ップの閾値電流より小さいものとしているので、各半導
体レーザチップから出射される光出力の差を小さくする
ことができる。According to the invention of claim 4, the threshold current of the lower semiconductor laser chip is smaller than the threshold current of the upper semiconductor laser chip corresponding to the stacking in which the current is smaller in the lower stage. Therefore, the difference in the light output emitted from each semiconductor laser chip can be reduced.
【００４４】請求項８および９に係る発明によれば、各
半導体レーザチップを直列に接続することができるので
小さい電流で半導体発光装置を駆動することができる。According to the eighth and ninth aspects of the invention, since the semiconductor laser chips can be connected in series, the semiconductor light emitting device can be driven with a small current.
【図１】 本発明の第一の実施例を示す平面図である。FIG. 1 is a plan view showing a first embodiment of the present invention.
【図２】 本発明の第二の実施例を示す平面図である。FIG. 2 is a plan view showing a second embodiment of the present invention.
【図３】 本発明の第三の実施例を示す平面図である。FIG. 3 is a plan view showing a third embodiment of the present invention.
【図４】 本発明の第四の実施例を示す平面図である。FIG. 4 is a plan view showing a fourth embodiment of the present invention.
【図５】 本発明の第五の実施例を示す平面図である。FIG. 5 is a plan view showing a fifth embodiment of the present invention.
【図６】 本発明の第六の実施例を示す平面図である。FIG. 6 is a plan view showing a sixth embodiment of the present invention.
【図７】 本発明の第六の実施例における他の例を示す
平面図である。FIG. 7 is a plan view showing another example of the sixth embodiment of the present invention.
【図８】 本発明の第六の実施例における他の例を示す
平面図である。FIG. 8 is a plan view showing another example of the sixth embodiment of the present invention.
【図９】 本発明の第六の実施例における他の例を示す
平面図である。FIG. 9 is a plan view showing another example of the sixth embodiment of the present invention.
【図１０】 本発明の第六の実施例における他の例を示
す平面図である。FIG. 10 is a plan view showing another example of the sixth embodiment of the present invention.
【図１１】 本発明の第六の実施例における他の例を示
す平面図である。FIG. 11 is a plan view showing another example of the sixth embodiment of the present invention.
【図１２】 本発明の第六の実施例における他の例を示
す平面図である。FIG. 12 is a plan view showing another example of the sixth embodiment of the present invention.
【図１３】 従来の半導体発光装置を示す平面図であ
る。FIG. 13 is a plan view showing a conventional semiconductor light emitting device.
【図１４】 半導体レーザチップの構成を説明する斜視
図である。FIG. 14 is a perspective view illustrating a configuration of a semiconductor laser chip.
１ 半導体レーザチップ、２ 基板、３および５ クラ
ッド層、４ 活性層、６ オーミックコンタクト層、７
金属電極、８、８１および８２ 発光領域、９ 高抵
抗領域、１０ ヒートシンク、１１ ハンダ、１２金
線、１３ ダミーチップ、１４ 段差、１５ ヒートシ
ンク用金属電極1 semiconductor laser chip, 2 substrates, 3 and 5 clad layer, 4 active layer, 6 ohmic contact layer, 7
Metal electrode, 8, 81 and 82 Light emitting area, 9 High resistance area, 10 Heat sink, 11 Solder, 12 Gold wire, 13 Dummy chip, 14 Step, 15 Metal electrode for heat sink
Claims (9)
段に積み上げた半導体レーザチップを備え、上記半導体
レーザチップの上段の半導体レーザチップをこの下段に
ある２個の半導体レーザチップにまたがるように積み上
げたことを特徴とする半導体発光装置。1. A heat sink, comprising a plurality of semiconductor laser chips stacked on the heat sink, wherein the upper semiconductor laser chip of the semiconductor laser chip is stacked so as to extend over the two lower semiconductor laser chips. And a semiconductor light emitting device.
下段の半導体レーザチップの発光領域数より多いことを
特徴とする請求項１記載の半導体発光装置。2. The semiconductor light emitting device according to claim 1, wherein the number of light emitting areas of the upper semiconductor laser chip is larger than the number of light emitting areas of the lower semiconductor laser chip.
下段の半導体レーザチップの発光領域幅より広いことを
特徴とする請求項１記載の半導体発光装置。3. The semiconductor light emitting device according to claim 1, wherein the width of the light emitting area of the upper semiconductor laser chip is wider than that of the lower semiconductor laser chip.
段の半導体レーザチップの閾値電流より小さいことを特
徴とする請求項１、２または３記載の半導体発光装置。4. The semiconductor light emitting device according to claim 1, wherein the threshold current of the lower semiconductor laser chip is smaller than that of the upper semiconductor laser chip.
段に積み上げた半導体レーザチップを備え、下段に上記
半導体レーザチップと同寸法のダミーチップを配設し、
上記半導体レーザチップのうち、上段の半導体レーザチ
ップをこの下段にある上記ダミーチップにまたがるよう
に積み上げたことを特徴とする半導体発光装置。5. A heat sink, a semiconductor laser chip stacked on the heat sink in a plurality of stages, and a dummy chip having the same size as the semiconductor laser chip is disposed on the lower stage.
Among the above semiconductor laser chips, a semiconductor light emitting device, wherein an upper semiconductor laser chip is stacked so as to straddle the lower dummy chip.
段に積み上げた半導体レーザチップを備え、上記ヒート
シンクの上記半導体レーザチップを積み上げる面には上
記半導体レーザチップの厚さと同寸法の段差を有し、上
記半導体レーザチップの上段の半導体レーザチップを上
記段差にまたがるように積み上げたことを特徴とする半
導体発光装置。6. A heat sink, comprising semiconductor laser chips stacked in a plurality of stages on the heat sink, wherein a surface of the heat sink on which the semiconductor laser chips are stacked has a step having the same size as the thickness of the semiconductor laser chip. A semiconductor light emitting device, wherein the semiconductor laser chips on the upper stage of the semiconductor laser chips are stacked so as to straddle the step.
いることを特徴とする請求項６記載の半導体発光装置。7. The semiconductor light emitting device according to claim 6, wherein the step is formed in a convex shape, a concave shape, or a step shape.
チップの両側に半導体レーザチップが反転して配設され
直列に接続されていることを特徴とする請求項５または
請求項７記載の半導体発光装置。8. A semiconductor laser chip is inverted and disposed on both sides of a convex step, a stepped step, or a dummy chip and connected in series. Semiconductor light emitting device.
チップの両側に導電型の異なる半導体レーザチップが配
設され直列に接続されていることを特徴とする請求項５
または８記載の半導体発光装置。9. A semiconductor laser chip having a different conductivity type is disposed on both sides of a convex step, a stepped step, or a dummy chip and connected in series.
Alternatively, the semiconductor light emitting device according to item 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17446494A JPH0846280A (en) | 1994-07-26 | 1994-07-26 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17446494A JPH0846280A (en) | 1994-07-26 | 1994-07-26 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0846280A true JPH0846280A (en) | 1996-02-16 |
Family
ID=15978949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17446494A Pending JPH0846280A (en) | 1994-07-26 | 1994-07-26 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0846280A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1126526A2 (en) * | 2000-02-15 | 2001-08-22 | Sony Corporation | Light emitting device and optical device using the same |
| JP2005286244A (en) * | 2004-03-30 | 2005-10-13 | Sanyo Electric Co Ltd | Semiconductor laser device and its manufacturing method |
| JP2005317919A (en) * | 2004-03-30 | 2005-11-10 | Sanyo Electric Co Ltd | Semiconductor laser equipment |
| JP2007048810A (en) * | 2005-08-08 | 2007-02-22 | Sony Corp | Semiconductor laser |
| KR100738110B1 (en) * | 2006-04-11 | 2007-07-12 | 삼성전자주식회사 | Semiconductor laser diode array |
| JP2008521239A (en) * | 2004-11-19 | 2008-06-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Composite LED module |
| JP2010199274A (en) * | 2009-02-25 | 2010-09-09 | Nichia Corp | Semiconductor laser device |
| JP2010226078A (en) * | 2009-02-24 | 2010-10-07 | Sony Corp | Light-emitting device and method of manufacturing same |
| JP2010287613A (en) * | 2009-06-09 | 2010-12-24 | Mitsubishi Electric Corp | Multi-wavelength semiconductor laser device |
| JP2011023754A (en) * | 2004-03-30 | 2011-02-03 | Sanyo Electric Co Ltd | Semiconductor laser device |
| US7907646B2 (en) | 2005-07-28 | 2011-03-15 | Panasonic Corporation | Laser light source and display device |
| JP2011077338A (en) * | 2009-09-30 | 2011-04-14 | Sony Corp | Light emitting device and method of manufacturing the same |
| US8003974B2 (en) * | 2006-09-28 | 2011-08-23 | Osram Opto Semiconductors Gmbh | LED semiconductor element having increased luminance |
| JP2013016585A (en) * | 2011-07-01 | 2013-01-24 | Mitsubishi Electric Corp | Multi-wavelength semiconductor laser device |
| WO2017098689A1 (en) * | 2015-12-09 | 2017-06-15 | パナソニック株式会社 | Semiconductor light emitting device |
-
1994
- 1994-07-26 JP JP17446494A patent/JPH0846280A/en active Pending
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1126526A2 (en) * | 2000-02-15 | 2001-08-22 | Sony Corporation | Light emitting device and optical device using the same |
| JP4544892B2 (en) * | 2004-03-30 | 2010-09-15 | 三洋電機株式会社 | Semiconductor laser device and manufacturing method thereof |
| JP2005286244A (en) * | 2004-03-30 | 2005-10-13 | Sanyo Electric Co Ltd | Semiconductor laser device and its manufacturing method |
| JP2005317919A (en) * | 2004-03-30 | 2005-11-10 | Sanyo Electric Co Ltd | Semiconductor laser equipment |
| JP2011023754A (en) * | 2004-03-30 | 2011-02-03 | Sanyo Electric Co Ltd | Semiconductor laser device |
| US7773654B2 (en) | 2004-03-30 | 2010-08-10 | Sanyo Electric Co., Ltd. | Semiconductor laser apparatus and fabrication method thereof |
| JP2008521239A (en) * | 2004-11-19 | 2008-06-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Composite LED module |
| US7907646B2 (en) | 2005-07-28 | 2011-03-15 | Panasonic Corporation | Laser light source and display device |
| US7672349B2 (en) | 2005-08-08 | 2010-03-02 | Sony Corporation | Laser diode |
| EP1753105A3 (en) * | 2005-08-08 | 2013-01-16 | Sony Corporation | Laser diode |
| JP2007048810A (en) * | 2005-08-08 | 2007-02-22 | Sony Corp | Semiconductor laser |
| KR100738110B1 (en) * | 2006-04-11 | 2007-07-12 | 삼성전자주식회사 | Semiconductor laser diode array |
| US8003974B2 (en) * | 2006-09-28 | 2011-08-23 | Osram Opto Semiconductors Gmbh | LED semiconductor element having increased luminance |
| US8314431B2 (en) | 2006-09-28 | 2012-11-20 | Osram Opto Semiconductors Gmbh | LED semiconductor element having increased luminance |
| JP2010226078A (en) * | 2009-02-24 | 2010-10-07 | Sony Corp | Light-emitting device and method of manufacturing same |
| US8654810B2 (en) | 2009-02-24 | 2014-02-18 | Sony Corporation | Light-emitting device and method of manufacturing the same |
| JP2010199274A (en) * | 2009-02-25 | 2010-09-09 | Nichia Corp | Semiconductor laser device |
| JP2010287613A (en) * | 2009-06-09 | 2010-12-24 | Mitsubishi Electric Corp | Multi-wavelength semiconductor laser device |
| JP2011077338A (en) * | 2009-09-30 | 2011-04-14 | Sony Corp | Light emitting device and method of manufacturing the same |
| JP2013016585A (en) * | 2011-07-01 | 2013-01-24 | Mitsubishi Electric Corp | Multi-wavelength semiconductor laser device |
| WO2017098689A1 (en) * | 2015-12-09 | 2017-06-15 | パナソニック株式会社 | Semiconductor light emitting device |
| JPWO2017098689A1 (en) * | 2015-12-09 | 2018-10-04 | パナソニック株式会社 | Semiconductor light emitting device |
| US10581218B2 (en) | 2015-12-09 | 2020-03-03 | Panasonic Corporation | Semiconductor light emitting device |
| US11018472B2 (en) | 2015-12-09 | 2021-05-25 | Panasonic Corporation | Semiconductor light emitting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9461091B2 (en) | Light emitting diode | |
| KR100937879B1 (en) | Method of making a iii-nitride light-emitting device with increased light generating capability | |
| JPH0846280A (en) | Semiconductor light emitting device | |
| JP6083194B2 (en) | Surface emitting semiconductor laser array device, light source and light source module | |
| US8803181B2 (en) | Semiconductor light emitting device and fabrication method of the semiconductor light emitting device | |
| JPH11168262A (en) | Surface type optical device, manufacturing method thereof, and display device | |
| CA2393009A1 (en) | Scalable led with improved current spreading structures | |
| US20060249745A1 (en) | Heat dissipating structure and light emitting device having the same | |
| KR102673060B1 (en) | Micro light emitting diode and manufacturing method of micro emitting diode | |
| US6552369B2 (en) | Light emitting diode and fabricating method thereof | |
| CN112289915A (en) | Flip-chip light-emitting diode chip and method of making the same | |
| KR20010088929A (en) | AlGaInN LED device and their fabrication method | |
| JP5141086B2 (en) | Semiconductor light emitting device | |
| KR100964399B1 (en) | Semiconductor laser diode and semiconductor laser diode assembly using same | |
| WO2005013382A1 (en) | Semiconductor light emitting device | |
| JP3752339B2 (en) | Semiconductor light emitting device | |
| JP3797748B2 (en) | Light emitting diode array | |
| JPH10308560A (en) | Semiconductor light emitting element and light emitting device | |
| KR20120011174A (en) | Light emitting module and package containing same | |
| JP2000022206A (en) | Semiconductor light emitting device | |
| JP4810751B2 (en) | Nitride semiconductor device | |
| JP3571477B2 (en) | Semiconductor light emitting device | |
| JPH10173230A (en) | Light emitting element | |
| JP2000077726A (en) | Semiconductor element and manufacture thereof | |
| JP2012227289A (en) | Semiconductor light-emitting device |