JPH08295530A - Alkali-free glass substrate - Google Patents
Alkali-free glass substrateInfo
- Publication number
- JPH08295530A JPH08295530A JP12944495A JP12944495A JPH08295530A JP H08295530 A JPH08295530 A JP H08295530A JP 12944495 A JP12944495 A JP 12944495A JP 12944495 A JP12944495 A JP 12944495A JP H08295530 A JPH08295530 A JP H08295530A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- glass substrate
- alkali
- density
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 title claims abstract description 41
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims abstract description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- 229910018404 Al2 O3 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 34
- 238000004031 devitrification Methods 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 239000002253 acid Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052634 enstatite Inorganic materials 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- BBCCCLINBSELLX-UHFFFAOYSA-N magnesium;dihydroxy(oxo)silane Chemical compound [Mg+2].O[Si](O)=O BBCCCLINBSELLX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Liquid Crystal (AREA)
- Glass Compositions (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、液晶ディスプレイ、E
Lディスプレイ等のディスプレイ、フィルター、センサ
ー等の基板として用いられる無アルカリガラス基板に関
するものである。The present invention relates to a liquid crystal display, E
The present invention relates to a non-alkali glass substrate used as a substrate for displays such as L displays, filters, and sensors.
【0002】[0002]
【従来の技術】従来より液晶ディスプレイ等のフラツト
パネルディスプレイ、フィルター、センサー等の基板と
してガラス基板が使用されている。2. Description of the Related Art Conventionally, glass substrates have been used as substrates for flat panel displays such as liquid crystal displays, filters and sensors.
【0003】この種のガラス基板の表面には、透明導電
膜、絶縁膜、半導体膜、金属膜等が成膜され、しかもフ
ォトリソグラフィ−エッチング(フォトエッチング)に
よって種々の回路やパターンが形成される。これらの成
膜、フォトエッチング工程において、ガラス基板には、
種々の熱処理や薬品処理が施される。A transparent conductive film, an insulating film, a semiconductor film, a metal film, etc. are formed on the surface of a glass substrate of this kind, and various circuits and patterns are formed by photolithography-etching (photoetching). . In these film formation and photo etching steps, the glass substrate is
Various heat treatments and chemical treatments are performed.
【0004】例えば薄膜トランジスタ(TFT)型アク
ティブマトリックス液晶ディスプレイの場合、ガラス基
板上に絶縁膜や透明導電膜が成膜され、さらにアモルフ
ァスシリコンや多結晶シリコンのTFTが、フォトエッ
チングによって多数形成される。このような工程におい
て、ガラス基板は、数百度の熱処理を受けると共に、硫
酸、塩酸、アルカリ溶液、フッ酸、バッファードフッ酸
等の種々の薬品による処理を受ける。特にバッファード
フッ酸は、絶縁膜のエッチングに広く用いられるが、ガ
ラスを侵食してその表面を白濁させやすく、またガラス
成分と反応して反応生成物ができ、これが工程中のフィ
ルターをつまらせたり、基板上に付着するため、この種
のガラス基板には、耐バッファードフッ酸性を付与する
ことが大変重要である。In the case of a thin film transistor (TFT) type active matrix liquid crystal display, for example, an insulating film or a transparent conductive film is formed on a glass substrate, and a large number of amorphous silicon or polycrystalline silicon TFTs are formed by photoetching. In such a step, the glass substrate is subjected to heat treatment at several hundreds of degrees and is also treated with various chemicals such as sulfuric acid, hydrochloric acid, an alkaline solution, hydrofluoric acid, and buffered hydrofluoric acid. Buffered hydrofluoric acid, in particular, is widely used for etching insulating films, but it tends to erode glass and cause its surface to become cloudy, and it also reacts with glass components to form reaction products that clog the filter during the process. In addition, it is very important to impart a buffered hydrofluoric acid resistance to this type of glass substrate, since it adheres to the substrate.
【0005】従ってTFT型アクティブマトリツクス液
晶ディスプレイに使用されるガラス基板には、以下のよ
うな特性が要求される。Therefore, the glass substrate used in the TFT type active matrix liquid crystal display is required to have the following characteristics.
【0006】(1)ガラス中にアルカリ金属酸化物が含
有されていると、熱処理中にアルカリイオンが成膜され
た半導体物質中に拡散し、膜特性の劣化を招くため、実
質的にアルカリ金属酸化物を含有しないこと。(1) If the glass contains an alkali metal oxide, alkali ions are diffused during the heat treatment into the semiconductor material on which the film is formed, and the film characteristics are deteriorated. Do not contain oxides.
【0007】(2)フォトエッチング工程において使用
される種々の酸、アルカリ等の薬品によって劣化しない
ような耐薬品性を有すること。(2) It has chemical resistance so that it is not deteriorated by various chemicals such as acids and alkalis used in the photoetching process.
【0008】(3)成膜、アニール等の工程における熱
処理によって、熱収縮しないこと。そのため高い歪点を
有すること。(3) The film should not shrink due to heat treatments such as film formation and annealing. Therefore, it must have a high strain point.
【0009】また溶融性、成形性を考慮して、この種の
ガラス基板には、以下のような特性も要求される。In consideration of meltability and moldability, the glass substrate of this type is also required to have the following characteristics.
【0010】(4)ガラス中に基板ガラスとして好まし
くない溶融欠陥が発生しないよう、溶融性に優れている
こと。(4) It has excellent meltability so that melting defects that are not desirable as a substrate glass will not occur in the glass.
【0011】(5)ガラス中に溶融、成形中に発生する
異物が存在しないように、耐失透性に優れていること。(5) The glass is excellent in devitrification resistance so that foreign matter generated during melting and molding does not exist in the glass.
【0012】また近年、TFT型アクティブマトリック
ス液晶ディスプレイ等の電子機器は、パーソナルな分野
への利用が進められており、機器の軽量化が要求されて
いる。これに伴ってガラス基板にも軽量化が要求されて
おり、薄板化が進められている。しかしながらこの種の
電子機器は、大型化も進められており、ガラス基板の強
度を考慮すると、薄板化については自ずと限界がある。
そこでガラス基板の軽量化を図る目的で、ガラスの密度
を低くすることが望まれている。Further, in recent years, electronic devices such as TFT type active matrix liquid crystal displays have been increasingly used in personal fields, and it is required to reduce the weight of the devices. Along with this, the glass substrate is also required to be lightweight, and thinning is being promoted. However, this type of electronic device is also being made larger, and considering the strength of the glass substrate, there is naturally a limit to thinning.
Therefore, it is desired to reduce the density of the glass for the purpose of reducing the weight of the glass substrate.
【0013】[0013]
【発明が解決しようとする課題】従来よりTFT型アク
ティブマトリックスディスプレイ基板に用いられている
無アルカリガラスとしては、石英ガラス、バリウム硼珪
酸ガラス及びアルミノ珪酸塩ガラスが存在するが、いず
れも一長一短がある。As the alkali-free glass conventionally used for the TFT type active matrix display substrate, there are quartz glass, barium borosilicate glass and aluminosilicate glass, but each has its advantages and disadvantages. .
【0014】すなわち石英ガラスは、耐薬品性、耐熱性
に優れ、低密度であるが、材料コストが高いという難点
がある。That is, quartz glass is excellent in chemical resistance and heat resistance and has a low density, but has a drawback that the material cost is high.
【0015】またバリウム硼珪酸ガラスとしては、市販
品としてコーニング社製#7059が存在するが、この
ガラスは耐酸性に劣り、フォトエッチング工程において
ガラス基板の表面に変質や白濁、荒れが生じやすく、し
かも基板からの溶出成分によって薬液を汚染しやすい。
さらにこのガラスは、歪点が低いため、熱収縮や熱変形
を起こしやすく、耐熱性に劣っている。またその密度も
2.76g/cm3 と高い。As a barium borosilicate glass, there is a commercially available product # 7059 manufactured by Corning Co., Ltd. However, this glass is inferior in acid resistance, and alteration, white turbidity and roughness are likely to occur on the surface of the glass substrate in the photoetching step, Moreover, the chemical solution is easily contaminated by the components eluted from the substrate.
Furthermore, since this glass has a low strain point, it is likely to undergo heat shrinkage or thermal deformation, and is inferior in heat resistance. The density is also high at 2.76 g / cm 3 .
【0016】アルミノ珪酸塩ガラスは、耐熱性に優れて
いるが、現在市場にあるガラス基板の多くが、溶融性が
悪く、大量生産に不向きである。またこのガラス基板
は、密度が高かったり、耐バッファードフッ酸性に劣る
ものが多く、全ての要求特性を満足するものは未だ存在
しないというのが実情である。Aluminosilicate glass is excellent in heat resistance, but most of the glass substrates currently on the market have poor melting properties and are not suitable for mass production. In addition, many of these glass substrates have high density and are inferior in buffered hydrofluoric acid resistance, and the fact is that none of them satisfy all the required characteristics.
【0017】本発明の目的は、上記した要求特性項目
(1)〜(5)を全て満足し、しかも密度が2.6g/
cm3 以下である無アルカリガラス基板を提供すること
である。The object of the present invention is to satisfy all the above-mentioned required characteristic items (1) to (5) and to have a density of 2.6 g /
It is to provide a non-alkali glass substrate having a size of 3 cm 3 or less.
【0018】[0018]
【課題を解決するための手段】本発明の無アルカリガラ
ス基板は、重量百分率で、SiO2 55〜65%、A
l2 O3 11〜20%、B2 O3 9〜15%、Mg
O 3〜10%、CaO 0〜4.5%、SrO 0〜
10%、BaO 0.5〜9%、ZnO 0〜5%、Z
rO2 0〜5%、TiO2 0〜5%、MgO+Ca
O+SrO+BaO+ZnO 5〜20%の組成を有
し、実質的にアルカリ金属酸化物を含有せず、密度で
2.6g/cm3 以下であることを特徴とする。The alkali-free glass substrate of the present invention has a weight percentage of SiO 2 55-65%, A 2.
l 2 O 3 11 to 20 %, B 2 O 3 9 to 15%, Mg
O 3-10%, CaO 0-4.5%, SrO 0-
10%, BaO 0.5-9%, ZnO 0-5%, Z
rO 2 0-5%, TiO 2 0-5%, MgO + Ca
It is characterized by having a composition of O + SrO + BaO + ZnO 5 to 20%, containing substantially no alkali metal oxide, and having a density of 2.6 g / cm 3 or less.
【0019】また本発明の無アルカリガラス基板は、好
ましくは、重量百分率で、SiO255〜65%、Al2
O3 11〜20%、B2 O3 9〜15%、MgO
3〜10%、CaO 0〜2%、SrO 0.5〜10
%、BaO 0.5〜9%、ZnO 0〜5%、ZrO
2 0〜1.8%、TiO2 0〜5%、MgO+Ca
O+SrO+BaO+ZnO 5〜20%の組成を有す
ることを特徴とする。The alkali-free glass substrate of the present invention preferably has a weight percentage of SiO 2 55 to 65% and Al 2
O 3 11~20%, B 2 O 3 9~15%, MgO
3-10%, CaO 0-2%, SrO 0.5-10
%, BaO 0.5-9%, ZnO 0-5%, ZrO
20 to 1.8%, TiO 20 to 5%, MgO + Ca
It is characterized by having a composition of O + SrO + BaO + ZnO 5-20%.
【0020】[0020]
【作用】以下、本発明の無アルカリガラス基板の構成成
分を上記のように限定した理由を説明する。The reason why the components of the alkali-free glass substrate of the present invention are limited as described above will be described below.
【0021】SiO2 は、ガラスのネットワークフォー
マーとなる成分であり、その含有量は、55〜65%で
ある。55%より少ないと、耐薬品性、特に耐酸性が低
下すると共に歪点が低くなるため耐熱性が悪くなり、且
つ、ガラスの密度を2.6g/cm3 以下にすることが
困難となる。また65%より多いと、高温粘度が大きく
なり、溶融性が悪くなるとと共にクリストバライトの失
透物が析出しやすくなる。SiO 2 is a component which serves as a glass network former, and its content is 55 to 65%. If it is less than 55%, the chemical resistance, particularly the acid resistance is lowered and the strain point is lowered so that the heat resistance is deteriorated and it becomes difficult to make the density of the glass 2.6 g / cm 3 or less. On the other hand, if it is more than 65%, the viscosity at high temperature becomes large, the meltability becomes poor, and the devitrified substance of cristobalite tends to precipitate.
【0022】Al2 O3 は、ガラスの耐熱性、耐失透性
を高めると共に、密度を低下させるために不可欠な成分
であり、その含有量は、11〜20%である。11%よ
り少ないと、失透温度が著しく上昇し、ガラス中に失透
異物が生じやすくなる。また20%より多いと、耐酸
性、特に耐バッファードフッ酸性が低下し、ガラス基板
の表面に白濁が生じやすくなる。Al 2 O 3 is an essential component for enhancing the heat resistance and devitrification resistance of glass and reducing the density, and the content thereof is 11 to 20%. If it is less than 11%, the devitrification temperature rises remarkably, and devitrification foreign matter is likely to occur in the glass. When it is more than 20%, the acid resistance, particularly the buffered hydrofluoric acid resistance is lowered, and the surface of the glass substrate is liable to be clouded.
【0023】B2 O3 は、融剤として働き、粘性を下
げ、溶融性を改善すると共に密度を低下させるための成
分であり、その含有量は、9〜15%である。9%より
少ないと、融剤としての働きが不十分となると共に、ガ
ラスの密度が高くなり、しかも耐バッファードフッ酸性
が低下する。また15%より多いと、ガラスの歪点が低
下し、耐熱性が悪くなると共に、ガラスの耐酸性も悪く
なる。B 2 O 3 is a component that acts as a flux, lowers the viscosity, improves the meltability, and lowers the density, and its content is 9 to 15%. If it is less than 9%, the function as a flux becomes insufficient, the density of the glass increases, and the buffered hydrofluoric acid resistance decreases. On the other hand, if it is more than 15%, the strain point of the glass is lowered, the heat resistance is deteriorated, and the acid resistance of the glass is also deteriorated.
【0024】MgOは、歪点を下げずに高温粘性を下
げ、ガラスの溶融性を改善する作用を有しており、二価
のアルカリ土類酸化物の中で、最も密度を下げる効果が
大きい成分であり、その含有量は、3〜10%である。
3%より少ないと、上記の効果が得られず、10%より
多いと、失透温度が著しく上昇し、エンスタタイト(M
gO・SiO2 )の結晶異物がガラス中に析出しやすく
なると共に、ガラスの耐バッファードフッ酸性が著しく
悪化する。MgO has the effect of lowering the high temperature viscosity without lowering the strain point and improving the meltability of glass, and has the greatest effect of lowering the density of the divalent alkaline earth oxides. It is a component and its content is 3 to 10%.
If it is less than 3%, the above effect cannot be obtained, and if it is more than 10%, the devitrification temperature rises significantly and the enstatite (M
Crystalline foreign substances such as gO · SiO 2 ) are likely to precipitate in the glass, and the buffered hydrofluoric acid resistance of the glass is significantly deteriorated.
【0025】CaOも、MgOと同様に歪点を下げずに
高温粘性を下げ、ガラスの溶融性を改善する作用を有す
る成分であり、その含有量は、0〜4.5%、好ましく
は0〜2%である。4.5%より多いと、ガラスの耐バ
ッファードフッ酸性が著しく悪化する。CaO is also a component which, like MgO, has a function of lowering the high temperature viscosity without lowering the strain point and improving the meltability of glass, and the content thereof is 0 to 4.5%, preferably 0. ~ 2%. If it exceeds 4.5%, the buffered hydrofluoric acid resistance of the glass is significantly deteriorated.
【0026】SrO、BaOは、共にガラスの耐薬品性
を向上させると共に、失透性を改善するための成分であ
るが、多量に含有させると、溶融性を損なうと共にガラ
スの密度が高くなるため好ましくない。従ってSrOの
含有量は、0〜10%、好ましくは0.5〜10%であ
り、BaOの含有量は、0.5〜9%である。Both SrO and BaO are components for improving the chemical resistance of the glass and improving the devitrification property. However, if contained in a large amount, the meltability is impaired and the density of the glass increases. Not preferable. Therefore, the content of SrO is 0 to 10%, preferably 0.5 to 10%, and the content of BaO is 0.5 to 9%.
【0027】ZnOは、耐バッファードフッ酸性を改善
すると共に、失透性を改善する成分であり、その含有量
は、0〜5%である。5%より多いと、逆にガラスが失
透しやすくなると共に、歪点が低下するため耐熱性が得
られない。ZnO is a component that improves the buffered hydrofluoric acid resistance and also improves the devitrification resistance, and the content thereof is 0 to 5%. On the other hand, if it is more than 5%, the glass tends to devitrify and the strain point decreases, so that heat resistance cannot be obtained.
【0028】ただしMgO、CaO、SrO、BaO及
びZnOの合量が5%より少ないと、ガラスの高温での
粘性が高くなり、溶融性が悪くなると共に、ガラスが失
透しやすくなり、20%より多くなると、ガラスの密度
が高くなり、2.6g/cm3以下にするのが困難とな
る。However, if the total amount of MgO, CaO, SrO, BaO and ZnO is less than 5%, the viscosity of the glass at high temperature becomes high, the melting property deteriorates, and the glass tends to devitrify. When it is more, the density of the glass becomes higher, and it becomes difficult to reduce the density to 2.6 g / cm 3 or less.
【0029】ZrO2 は、ガラスの耐薬品性、特に耐酸
性を改善すると共に、高温粘性を下げて溶融性を向上さ
せる成分であり、その含有量は、0〜5%、好ましくは
0〜1.8%である。5%より多いと、失透温度が上昇
し、ジルコンの失透異物が析出しやすくなる。ZrO 2 is a component that improves the chemical resistance, particularly acid resistance, of the glass and lowers the high temperature viscosity to improve the meltability, and its content is 0 to 5%, preferably 0 to 1 0.8%. If it is more than 5%, the devitrification temperature rises, and devitrification foreign matter of zircon is likely to deposit.
【0030】TiO2 は、耐薬品性、特に耐バッファー
ドフッ酸性を改善すると共に、高温粘性を低下し溶融性
を向上させる成分であり、その含有量は、0〜5%であ
る。5%より多いと、ガラスに着色を生じ、透過率が低
下するためディスプレイ用ガラス基板として好ましくな
い。TiO 2 is a component that improves chemical resistance, particularly buffered hydrofluoric acid resistance, lowers high temperature viscosity and improves meltability, and the content thereof is 0 to 5%. When it is more than 5%, the glass is colored and the transmittance is lowered, which is not preferable as a glass substrate for a display.
【0031】また本発明においては、上記成分以外に
も、特性を損なわない範囲で他の成分を添加させること
が可能であり、例えば清澄剤としてAs2 O3 、Sb2
O3 、F2 、Cl2 、SO3 等の成分を添加させること
が可能である。In the present invention, in addition to the above-mentioned components, other components may be added within a range that does not impair the characteristics. For example, As 2 O 3 or Sb 2 may be used as a fining agent.
It is possible to add components such as O 3 , F 2 , Cl 2 , and SO 3 .
【0032】ただし一般に融剤として使用されるPbO
とP2 O5 は、ガラスの耐薬品性を著しく低下させるた
め、本発明においては添加を避けるべきである。特にP
bOは、溶融時に融液の表面から揮発し、環境を汚染す
る虞れもあるため好ましくない。However, PbO generally used as a fluxing agent
P 2 O 5 and, in order to significantly reduce the chemical resistance of the glass, should be avoided additives in the present invention. Especially P
bO is not preferable because it may volatilize from the surface of the melt during melting and may contaminate the environment.
【0033】[0033]
【実施例】以下、本発明の無アルカリガラス基板を実施
例に基づいて詳細に説明する。EXAMPLES The alkali-free glass substrate of the present invention will be described in detail below based on examples.
【0034】表1、2は、実施例のガラス(試料No.
1〜9)と比較例のガラス(試料No.10〜13)を
示すものである。Tables 1 and 2 show the glasses of the examples (Sample No.
1 to 9) and comparative glass (Sample Nos. 10 to 13).
【0035】[0035]
【表1】 [Table 1]
【0036】[0036]
【表2】 [Table 2]
【0037】表中の各試料は、次のようにして作製し
た。まず表の組成となるようにガラス原料を調合し、白
金坩堝に入れ、1580℃で、16時間溶融した後、カ
ーボン板上に流し出し、板状に成形した。次いでこれら
の板状ガラスの両面を光学研磨することによってガラス
基板としたものである。Each sample in the table was prepared as follows. First, glass raw materials were blended so as to have the composition shown in the table, put in a platinum crucible, melted at 1580 ° C. for 16 hours, poured out onto a carbon plate, and molded into a plate shape. Then, both surfaces of these plate-like glasses are optically polished to form glass substrates.
【0038】表から明らかなように、実施例であるN
o.1〜9の各試料は、いずれも密度が2.6g/cm
3 以下、歪点が640℃以上、失透温度が1100℃以
下、102.5 ポイズに相当する温度が1580℃以下で
あり、いずれも良好な特性を有していた。またこれらの
試料は、耐硫酸性と耐バッファードフッ酸性にも優れて
いた。As is apparent from the table, N which is the embodiment
o. Each of the samples 1 to 9 has a density of 2.6 g / cm
The strain point was 3 or lower, the strain point was 640 ° C. or higher, the devitrification temperature was 1100 ° C. or lower, and the temperature corresponding to 10 2.5 poise was 1580 ° C. or lower, and all had good characteristics. Moreover, these samples were also excellent in sulfuric acid resistance and buffered hydrofluoric acid resistance.
【0039】それに対し、比較例であるNo.10の試
料は、密度が大きいため、実施例の試料に比べて重量が
大きいものと考えられる。しかも歪点が低いため、耐熱
性に劣り、且つ、耐硫酸性についても劣っていた。また
No.11の試料も、密度が大きく、歪点がやや低かっ
た。さらに失透温度が高いため、溶融性に劣り、且つ、
耐バッファードフッ酸性についても劣っていた。さらに
No.12の試料は、耐バッファードフッ酸性が劣り、
No.13の試料は、高温粘度が高く、溶融性に劣ると
共に、失透温度も高かった。On the other hand, No. It is considered that the sample of No. 10 has a higher density than that of the sample of the example because of its high density. Moreover, since the strain point was low, the heat resistance was poor and the sulfuric acid resistance was also poor. In addition, No. Sample No. 11 also had a high density and a slightly low strain point. Furthermore, since the devitrification temperature is high, the meltability is poor, and
It was also inferior in buffered hydrofluoric acid resistance. Furthermore, No. Sample No. 12 was inferior in buffered hydrofluoric acid resistance,
No. The sample of No. 13 had high viscosity at high temperature, poor meltability, and high devitrification temperature.
【0040】尚、表中の密度は、周知のアルキメデス法
によって測定したものである。また歪点は、ASTM
C336−71の方法に基づいて測定し、失透温度は、
各試料から300〜500μmの粒径を有するガラス粉
末を作製し、これを白金ボート内に入れ、温度勾配炉に
24時間保持した後の失透観察によって求めたものであ
る。The density in the table is measured by the well-known Archimedes method. The strain point is ASTM
The devitrification temperature is measured according to the method of C336-71.
A glass powder having a particle diameter of 300 to 500 μm was prepared from each sample, placed in a platinum boat, and held in a temperature gradient furnace for 24 hours, followed by devitrification observation.
【0041】また102.5 ポイズ温度は、高温粘度であ
る102.5 ポイズに相当する温度を示すものであり、こ
の温度が低いほど、溶融、成形性に優れていることにな
る。The 10 2.5 poise temperature indicates a temperature corresponding to a high temperature viscosity of 10 2.5 poise, and the lower the temperature, the better the melting and moldability.
【0042】さらに耐硫酸性は、各試料を80℃に保持
された10重量%硫酸水溶液に24時間浸漬した後、ガ
ラス基板の表面状態を観察することによって評価した。
ガラス基板の表面が、白濁したり、クラック等が入った
ものを×、全く変化がないものを○で示した。Further, the sulfuric acid resistance was evaluated by immersing each sample in a 10% by weight sulfuric acid aqueous solution kept at 80 ° C. for 24 hours and then observing the surface condition of the glass substrate.
When the surface of the glass substrate was cloudy or had cracks, x was shown, and when there was no change, it is shown as o.
【0043】また耐バッファードフッ酸性は、各試料
を、20℃に保持された38.7重量%フッ化アンモニ
ウム、1.6重量%フッ酸からなるバッファードフッ酸
に30分間浸漬した後、ガラス基板の表面状態を観察す
ることによって評価した。ガラス基板の表面が白濁して
いるものを×、全く変化のなかったものを○で示した。The resistance to buffered hydrofluoric acid was determined by immersing each sample in buffered hydrofluoric acid consisting of 38.7% by weight ammonium fluoride and 1.6% by weight hydrofluoric acid kept at 20 ° C. for 30 minutes. It was evaluated by observing the surface condition of the glass substrate. The case where the surface of the glass substrate was clouded was shown by x, and the case where there was no change was shown by ◯.
【0044】[0044]
【発明の効果】以上のような本発明の無アルカリガラス
基板は、実質的にアルカリ金属酸化物を含有せず、耐熱
性、耐薬品性、溶融成形性に優れ、しかも低密度である
ため、特に軽量化が要求されるTFT型アクティブマト
リックス基板として好適である。The alkali-free glass substrate of the present invention as described above contains substantially no alkali metal oxide, is excellent in heat resistance, chemical resistance, melt moldability and has a low density. Especially, it is suitable as a TFT type active matrix substrate which needs to be lightweight.
Claims (2)
%、Al2 O3 11〜20%、B2 O3 9〜15
%、MgO 3〜10%、CaO 0〜4.5%、Sr
O 0〜10%、BaO 0.5〜9%、ZnO 0〜
5%、ZrO20〜5%、TiO2 0〜5%、MgO
+CaO+SrO+BaO+ZnO 5〜20%の組成
を有し、実質的にアルカリ金属酸化物を含有せず、密度
が2.6g/cm3 以下であることを特徴とする無アル
カリガラス基板。1. A weight percentage of SiO 2 55-65.
%, Al 2 O 3 11 to 20 %, B 2 O 3 9 to 15
%, MgO 3-10%, CaO 0-4.5%, Sr
O 0-10%, BaO 0.5-9%, ZnO 0-
5%, ZrO 2 0-5%, TiO 2 0-5%, MgO
+ CaO + SrO + BaO + ZnO 5 to 20% composition, containing substantially no alkali metal oxide, and having a density of 2.6 g / cm 3 or less, an alkali-free glass substrate.
%、Al2 O3 11〜20%、B2 O3 9〜15
%、MgO 3〜10%、CaO 0〜2%、SrO
0.5〜10%、BaO 0.5〜9%、ZnO 0〜
5%、ZrO20〜1.8%、TiO2 0〜5%、M
gO+CaO+SrO+BaO+ZnO5〜20%の組
成を有することを特徴とする請求項1の無アルカリガラ
ス基板。2. SiO 2 55-65 by weight percentage.
%, Al 2 O 3 11 to 20 %, B 2 O 3 9 to 15
%, MgO 3-10%, CaO 0-2%, SrO
0.5-10%, BaO 0.5-9%, ZnO 0-
5%, ZrO 2 0 to 1.8%, TiO 2 0 to 5%, M
The alkali-free glass substrate according to claim 1, which has a composition of gO + CaO + SrO + BaO + ZnO 5 to 20%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12944495A JP3666608B2 (en) | 1995-04-27 | 1995-04-27 | Alkali-free glass substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12944495A JP3666608B2 (en) | 1995-04-27 | 1995-04-27 | Alkali-free glass substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08295530A true JPH08295530A (en) | 1996-11-12 |
JP3666608B2 JP3666608B2 (en) | 2005-06-29 |
Family
ID=15009629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12944495A Expired - Fee Related JP3666608B2 (en) | 1995-04-27 | 1995-04-27 | Alkali-free glass substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3666608B2 (en) |
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JP2023155455A (en) * | 2018-11-14 | 2023-10-20 | Agc株式会社 | Glass substrate for high frequency device, liquid crystal antenna and high frequency device |
US12344554B2 (en) | 2018-11-14 | 2025-07-01 | AGC Inc. | Glass substrate for high frequency device, liquid crystal antenna and high frequency device |
JP2022088298A (en) * | 2020-12-02 | 2022-06-14 | 台湾玻璃工業股▲ふん▼有限公司 | Glass composition comprising low thermal expansion coefficient and glass fiber thereof |
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