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JPH08236704A - Semiconductor intergrated circuit - Google Patents

Semiconductor intergrated circuit

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Publication number
JPH08236704A
JPH08236704A JP7040184A JP4018495A JPH08236704A JP H08236704 A JPH08236704 A JP H08236704A JP 7040184 A JP7040184 A JP 7040184A JP 4018495 A JP4018495 A JP 4018495A JP H08236704 A JPH08236704 A JP H08236704A
Authority
JP
Japan
Prior art keywords
clock signal
signal
semiconductor integrated
integrated circuit
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7040184A
Other languages
Japanese (ja)
Other versions
JP2919292B2 (en
Inventor
Akihiko Koga
昭彦 古賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP7040184A priority Critical patent/JP2919292B2/en
Publication of JPH08236704A publication Critical patent/JPH08236704A/en
Application granted granted Critical
Publication of JP2919292B2 publication Critical patent/JP2919292B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE: To prevent malfunction of the other electronic circuit and electronic device by reducing radiation of an electromagnetic wave due to current of signal wiring on a semiconductor integrated circuit. CONSTITUTION: A clock signal CK on a semiconductor integrated circuit 1 and a clock signal CKB in an inversed phase relation thereto are adjacently arranged, then one side clock signal wiring CKB is provided with a dummy load capacitor Cd so as to adjust that absolute values of charge and discharge currents of the respective signal wirings may be equal. Thereby, magnetic fields generated by the charge and discharge currents can be cancelled with high accuracy.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、高速で動作する半導体
集積回路に関し、特にその半導体集積回路から輻射され
る電磁波エネルギーを制御する半導体集積回路に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit which operates at high speed, and more particularly to a semiconductor integrated circuit which controls electromagnetic wave energy radiated from the semiconductor integrated circuit.

【0002】[0002]

【従来の技術】近年、半導体集積回路の高速化、大規模
化にともない、その半導体集積回路より輻射される電磁
波による電子機器の誤動作が問題になっている。
2. Description of the Related Art In recent years, as semiconductor integrated circuits have become faster and larger in scale, malfunction of electronic equipment due to electromagnetic waves radiated from the semiconductor integrated circuits has become a problem.

【0003】この問題に対して、図4に示す様な構成の
半導体集積回路より輻射される電磁波エネルギーを低減
する半導体集積回路1は、基本クロック信号を生成する
クロック信号生成回路2と、機能回路3と、クロック信
号4、クロック信号の反転信号5とを備える。
To solve this problem, a semiconductor integrated circuit 1 for reducing electromagnetic wave energy radiated from a semiconductor integrated circuit having a structure as shown in FIG. 4 includes a clock signal generating circuit 2 for generating a basic clock signal and a functional circuit. 3, a clock signal 4, and an inverted signal 5 of the clock signal.

【0004】図5は、この半導体集積回路1の動作を説
明するためのタイミングチャートである。これらの図を
参照して従来例を説明する。半導体集積回路1に使用さ
れるクロック信号CKおよびCKBは図5に示すタイミ
ングチャートでは逆位相の関係にあり、その時のそれぞ
れの信号配線を流れる充放電電流Iクロック信号CKお
よびICKBは、充電側をプラスとするとそれぞれの電
流の最大値は、それぞれの配線の負荷とそれを駆動する
トランジスタの電流供給能力に依存する。一般的には、
それぞれの電流の最大値は異なっている。
FIG. 5 is a timing chart for explaining the operation of the semiconductor integrated circuit 1. A conventional example will be described with reference to these drawings. The clock signals CK and CKB used in the semiconductor integrated circuit 1 have an opposite phase relationship in the timing chart shown in FIG. 5, and the charging / discharging current I clock signals CK and ICKB flowing through the respective signal wirings at that time are the same as those on the charging side. If it is positive, the maximum value of each current depends on the load of each wiring and the current supply capability of the transistor that drives it. In general,
The maximum value of each current is different.

【0005】そして、これらの電流で磁界が発生し、そ
れが電磁波となり他の電気回路へ影響を及ぼす。無限長
配線に流れる電流で近似すると、発生する磁界Hは H=(I/2πr) ここで、Iは配線を流れる電流で、rは配線からの距離
である。
A magnetic field is generated by these currents, which becomes an electromagnetic wave and affects other electric circuits. Approximating with a current flowing through an infinitely long wire, the generated magnetic field H is H = (I / 2πr), where I is the current flowing through the wire and r is the distance from the wire.

【0006】電流ICKおよびICKBによる磁界HC
KおよびHCKBは、図5中でクロック信号CK、CK
Bの配線の距離に比べて、十分遠いところでは、クロッ
ク信号CKによる磁界HCKとクロック信号CKBによ
る磁界HCKBの和になるため、 HCK+HCKB=(1/2π)・(ICK+ICK
B) となり図5に示す値(HCK+HCKB)になる。
Magnetic field HC due to currents ICK and ICKB
K and HCKB are clock signals CK and CK in FIG.
Since the sum of the magnetic field HCK by the clock signal CK and the magnetic field HCKB by the clock signal CKB is at a position far away from the distance of the wiring B, HCK + HCKB = (1 / 2π). (ICK + ICK
B) and the value (HCK + HCKB) shown in FIG.

【0007】つまり、逆位相の関係にある信号を近接し
て配線することにより、それぞれの信号配線による磁界
が打ち消し合い、結果的にそれが半導体集積回路より輻
射される電磁波エネルギーの低減を実現している。
In other words, by wiring signals having opposite phases in close proximity to each other, the magnetic fields due to the respective signal wirings cancel each other, and as a result, it is possible to reduce the electromagnetic wave energy radiated from the semiconductor integrated circuit. ing.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、従来の
半導体集積回路から輻射される電磁波エネルギーの低減
方法では、半導体集積回路上の逆位相関係の信号を選び
出し、単にそれらを近接して配線しているだけである。
それ故、その対の信号配線の負荷が同じでない場合、ま
たは大電流のながれる信号配線で逆位相信号が無い場合
は、効果が不十分または、対策が出来ない問題点があ
る。
However, in the conventional method of reducing the electromagnetic wave energy radiated from the semiconductor integrated circuit, the signals of the antiphase relation on the semiconductor integrated circuit are selected and simply wired in close proximity to each other. Only.
Therefore, when the load of the pair of signal wirings is not the same or when there is no anti-phase signal in the signal wiring through which a large current flows, there is a problem that the effect is insufficient or no countermeasure can be taken.

【0009】[0009]

【課題を解決するための手段】本発明による電磁波エネ
ルギー輻射の低減方法は、逆位相の関係にある信号配線
がある場合は、ダミー素子を設けることで、2つの信号
配線の充放電電流の絶対値を同じなるように調整し、逆
位相の関係にある信号配線がない場合は、ダミー信号配
線、ダミー素子を設ける構成を有している。
According to the method for reducing electromagnetic wave energy radiation according to the present invention, when there is a signal wiring having an opposite phase relationship, a dummy element is provided so that the charge and discharge currents of the two signal wirings are absolute. The values are adjusted to be the same, and when there is no signal wiring having an opposite phase relationship, a dummy signal wiring and a dummy element are provided.

【0010】[0010]

【実施例】次に本発明の実施例について図面を参照して
説明する。
Next, an embodiment of the present invention will be described with reference to the drawings.

【0011】図1は本発明の第1の実施例である。図2
は図1の実施例の動作を示めすタイミングチャートであ
る。図中の記号で従来例と同じ構成要素には、同じ参照
符号を付記している。従来例と異なるのは、クロック信
号CKBの充放電電流I CKBをクロック信号CKの
充放電電流ICBと絶対値が同じになるように、ダミー
負荷容量Cdを追加していることである。ダミー負荷容
量Cdは、半導体集積回路のマスク設計が終了した時点
で各信号配線の負荷容量を見積もることにより決定すれ
ば、高い精度の調整を実現できる。
FIG. 1 shows a first embodiment of the present invention. Figure 2
3 is a timing chart showing the operation of the embodiment of FIG. In the figure, the same components as those of the conventional example are designated by the same reference numerals. The difference from the conventional example is that a dummy load capacitance Cd is added so that the charge / discharge current ICKB of the clock signal CKB has the same absolute value as the charge / discharge current ICB of the clock signal CK. If the dummy load capacitance Cd is determined by estimating the load capacitance of each signal wiring at the time when the mask design of the semiconductor integrated circuit is completed, highly accurate adjustment can be realized.

【0012】ダミー負荷容量Cdをつけた場合の各信号
配線の充放電電流ICK,ICKBおよびそれによって
発生する磁界HCK、HCKBは図2に示すようにな
る。クロック信号CKの充放電電流の最大値I1とクロ
ック信号CKBの充放電電流の最大値I2の絶対値は同
じで極生は逆であるから、磁界の和は0となる。
The charging / discharging currents ICK and ICKB of the respective signal lines and the magnetic fields HCK and HCKB generated by the charging / discharging currents ICK and ICKB with the dummy load capacitance Cd are as shown in FIG. Since the absolute value of the maximum value I1 of the charging / discharging current of the clock signal CK and the maximum value I2 of the charging / discharging current of the clock signal CKB are the same and their reversion is opposite, the sum of the magnetic fields becomes zero.

【0013】図3は本発明の第2の実施例である。この
実施例は、逆位相の信号がない場合であり、クロック信
号CK1と、ダミーのクロック信号CDMとを有し、ダ
ミーのクロック信号CDMクロック信号CK1と逆位相
の関係にある。さらに、ダミー負荷容量Cd1、Cd2
を有している。図中の記号で第1の実施例と同じものに
は、同じ符号を付記している。
FIG. 3 shows a second embodiment of the present invention. In this embodiment, there is no signal having the opposite phase, the clock signal CK1 and the dummy clock signal CDM are included, and the dummy clock signal CDM and the clock signal CK1 have the opposite phase relationship. Furthermore, dummy load capacitors Cd1 and Cd2
have. The same symbols as those in the first embodiment are attached to the same symbols in the drawings.

【0014】この実施例の場合、ダミーのクロック信号
CDMはクロック信号CK1と近接して配線される。ま
た、ダミー負荷容量Cd1、Cd2は、半導体集積回路
のマスク設計終了時に信号配線の負荷容量を見積もり、
反映させた値でなければならない。つまり、各信号の充
放電電流の絶対値が等しくなるように設定されなければ
ならない。この実施例の基本的な動作及びその他の作用
効果は第1の実施例と同様であるので詳細な説明は省略
する。
In the case of this embodiment, the dummy clock signal CDM is wired close to the clock signal CK1. The dummy load capacitances Cd1 and Cd2 estimate the load capacitance of the signal wiring at the end of the mask design of the semiconductor integrated circuit,
Must be a reflected value. That is, the absolute value of the charge / discharge current of each signal must be set to be equal. The basic operation and other operational effects of this embodiment are similar to those of the first embodiment, and detailed description thereof will be omitted.

【0015】[0015]

【発明の効果】以上説明したように本発明は、逆位相の
信号配線、ダミー負荷容量またはダミー信号配線を用い
ることで、信号配線を流れる電流によって発生する磁界
を高精度で相殺することができる。つまり、半導体集積
回路より輻射される電磁波エネルギーを低減できる効果
がある。
As described above, according to the present invention, the magnetic field generated by the current flowing through the signal wiring can be canceled with high accuracy by using the signal wiring, the dummy load capacitance or the dummy signal wiring of the opposite phase. . That is, there is an effect that the electromagnetic wave energy radiated from the semiconductor integrated circuit can be reduced.

【0016】本実施例においては、クロック信号配線に
ついて説明したが、これに限らず比較的大きな電流が流
れる信号配線に適用すれば、充分な効果を得ることが出
来る。また、ダミー素子として、容量素子について説明
したが、流れる電流の性質に対応させてダミー素子に抵
抗素子、インダクタンス素子を用いても同じ効果を得る
ことが出来る。
Although the clock signal wiring has been described in the present embodiment, the present invention is not limited to this, but if it is applied to a signal wiring through which a relatively large current flows, a sufficient effect can be obtained. Further, although the capacitive element has been described as the dummy element, the same effect can be obtained even if a resistive element or an inductance element is used as the dummy element according to the property of the flowing current.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例の半導体集積回路のブロ
ック図である。
FIG. 1 is a block diagram of a semiconductor integrated circuit according to a first embodiment of the present invention.

【図2】本発明の第1の実施例の動作を説明するタイミ
ングチャートである。
FIG. 2 is a timing chart explaining the operation of the first exemplary embodiment of the present invention.

【図3】本発明の第2の実施例の半導体集積回路のブロ
ックである。
FIG. 3 is a block diagram of a semiconductor integrated circuit according to a second embodiment of the present invention.

【図4】従来の半導体集積回路ブロック図である。FIG. 4 is a block diagram of a conventional semiconductor integrated circuit.

【図5】従来例の動作を説明するタイミングチャートで
ある。
FIG. 5 is a timing chart for explaining the operation of the conventional example.

【符号の説明】[Explanation of symbols]

1 半導体集積回路 2 クロック生成回路 3 機能回路 4 クロック信号CK 5 クロック信号CKB 6 クロック信号CK1 7 ダミークロック信号CDM Cd,Cd1,Cd2 ダミー負荷容量 ICK クロック信号CKの充放電電流 ICKB クロック信号CKBの充放電電流 HCK I CKによって発生する磁界 HCKB I CKBによって発生する磁界 1 semiconductor integrated circuit 2 clock generation circuit 3 functional circuit 4 clock signal CK 5 clock signal CKB 6 clock signal CK1 7 dummy clock signal CDM Cd, Cd1, Cd2 dummy load capacitance ICK charging / discharging current of clock signal CK ICKB clock signal CKB charging Magnetic field generated by discharge current HCK I CK Magnetic field generated by HCKB I CKB

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 半導体基板上に形成される第1の信号配
線と、この配線の近傍に配置され前記第1の信号配線に
伝送される信号とは逆位相の信号を伝送する第2の信号
配線を有し、前記第2の信号配線に接続されるダミー素
子を具備したことを特徴とする半導体集積回路。
1. A first signal wiring formed on a semiconductor substrate, and a second signal which is arranged in the vicinity of this wiring and which transmits a signal having a phase opposite to that of a signal transmitted to the first signal wiring. A semiconductor integrated circuit having a wiring and including a dummy element connected to the second signal wiring.
【請求項2】 前記第1の信号配線の近傍に逆位相の信
号を伝送する信号配線がない場合、前記第2の信号配線
としてダミー配線を配置したことを特徴とする請求項1
記載の半導体集積回路。
2. A dummy wiring is arranged as the second signal wiring when there is no signal wiring for transmitting a signal having an opposite phase in the vicinity of the first signal wiring.
The semiconductor integrated circuit described.
JP7040184A 1995-02-28 1995-02-28 Semiconductor integrated circuit Expired - Fee Related JP2919292B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7040184A JP2919292B2 (en) 1995-02-28 1995-02-28 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7040184A JP2919292B2 (en) 1995-02-28 1995-02-28 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPH08236704A true JPH08236704A (en) 1996-09-13
JP2919292B2 JP2919292B2 (en) 1999-07-12

Family

ID=12573704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7040184A Expired - Fee Related JP2919292B2 (en) 1995-02-28 1995-02-28 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JP2919292B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000206943A (en) * 1999-01-05 2000-07-28 Samsung Electronics Co Ltd Liquid crystal display device having dual shift clock wirings
WO2006006597A1 (en) * 2004-07-12 2006-01-19 Sumitomo Precision Products Angular speed sensor
JP2007311763A (en) * 2006-04-18 2007-11-29 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit system, semiconductor integrated circuit, operating system, and control method of semiconductor integrated circuit
KR100865217B1 (en) * 2006-01-30 2008-10-23 산요덴키가부시키가이샤 Semiconductor integrated circuit
US8031233B2 (en) 2002-02-12 2011-10-04 Sony Corporation Solid-state image pickup device and method with time division video signal outputs

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0332054A (en) * 1989-06-28 1991-02-12 Mitsubishi Electric Corp Clock signal supply circuit
JPH0430452A (en) * 1990-05-25 1992-02-03 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPH056983A (en) * 1990-09-28 1993-01-14 Kawasaki Steel Corp Master chips for integrated circuits and gate arrays

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0332054A (en) * 1989-06-28 1991-02-12 Mitsubishi Electric Corp Clock signal supply circuit
JPH0430452A (en) * 1990-05-25 1992-02-03 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JPH056983A (en) * 1990-09-28 1993-01-14 Kawasaki Steel Corp Master chips for integrated circuits and gate arrays

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000206943A (en) * 1999-01-05 2000-07-28 Samsung Electronics Co Ltd Liquid crystal display device having dual shift clock wirings
US8031233B2 (en) 2002-02-12 2011-10-04 Sony Corporation Solid-state image pickup device and method with time division video signal outputs
WO2006006597A1 (en) * 2004-07-12 2006-01-19 Sumitomo Precision Products Angular speed sensor
US7637156B2 (en) 2004-07-12 2009-12-29 Sumitomo Precision Products Angular velocity sensor with vibrator having ring portion and electrodes positioned inside and outside the ring portion
KR100865217B1 (en) * 2006-01-30 2008-10-23 산요덴키가부시키가이샤 Semiconductor integrated circuit
JP2007311763A (en) * 2006-04-18 2007-11-29 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit system, semiconductor integrated circuit, operating system, and control method of semiconductor integrated circuit

Also Published As

Publication number Publication date
JP2919292B2 (en) 1999-07-12

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