JPH08236271A - Organic electroluminescent device and manufacturing method thereof - Google Patents
Organic electroluminescent device and manufacturing method thereofInfo
- Publication number
- JPH08236271A JPH08236271A JP4209695A JP4209695A JPH08236271A JP H08236271 A JPH08236271 A JP H08236271A JP 4209695 A JP4209695 A JP 4209695A JP 4209695 A JP4209695 A JP 4209695A JP H08236271 A JPH08236271 A JP H08236271A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- organic electroluminescent
- cathode
- organic
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 125000001644 phenoxazinyl group Chemical group C1(=CC=CC=2OC3=CC=CC=C3NC12)* 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002627 poly(phosphazenes) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- 150000005255 pyrrolopyridines Chemical class 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000003518 tetracenes Chemical class 0.000 description 1
- QKTRRACPJVYJNU-UHFFFAOYSA-N thiadiazolo[5,4-b]pyridine Chemical class C1=CN=C2SN=NC2=C1 QKTRRACPJVYJNU-UHFFFAOYSA-N 0.000 description 1
- XDDVRYDDMGRFAZ-UHFFFAOYSA-N thiobenzophenone Chemical class C=1C=CC=CC=1C(=S)C1=CC=CC=C1 XDDVRYDDMGRFAZ-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical class C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
(57)【要約】
【目的】長期間に渡って安定な発光特性を維持でき、ダ
ークスポットの発生を抑制することができる有機電界発
光素子を提供する。
【構成】基板上に、陽極、有機発光層及び陰極が積層さ
れ、該積層物の外表面に、内側から順に保護層、封止
層、外気遮断材層が形成されてなる有機電界発光素子で
あって、前記封止層が下記(イ)、(ロ)、(ハ)の条
件を満たす樹脂を主成分とする有機電界発光素子。
(イ)JIS K 6911に規定される伸びが100
%以上。
(ロ)JIS K 6301に規定されるショアーA硬
度が20以上。
(ハ)ガラス転移点が−40℃以下で、−40〜+10
0℃の温度範囲でゴム状弾性を示す。
(57) [Summary] [Object] To provide an organic electroluminescent device capable of maintaining stable light emitting characteristics for a long period of time and suppressing the generation of dark spots. [Structure] An organic electroluminescent device comprising a substrate, an anode, an organic light emitting layer, and a cathode laminated on the substrate, and a protective layer, a sealing layer, and an outside air blocking material layer formed on the outer surface of the laminate in this order from the inside. The organic electroluminescent element in which the sealing layer is mainly composed of a resin that satisfies the following conditions (a), (b), and (c). (A) The elongation specified in JIS K 6911 is 100.
%that's all. (B) Shore A hardness specified by JIS K 6301 is 20 or more. (C) Glass transition point of -40 ° C or lower, -40 to +10
It exhibits rubber-like elasticity in the temperature range of 0 ° C.
Description
【0001】[0001]
【産業上の利用分野】本発明は有機電界発光素子及びそ
の製造方法に関するものであり、詳しくは、有機化合物
から成る発光層に電界をかけて光を放出する薄膜型デバ
イスの封止方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device and a method for manufacturing the same, and more particularly, to a method for encapsulating a thin film type device which emits light by applying an electric field to a light emitting layer made of an organic compound. Is.
【0002】[0002]
【従来の技術】従来、薄膜型の電界発光(EL)素子と
しては、無機材料の〓−〓族化合物半導体であるZn
S、CaS、SrS等に、発光中心であるMnや希土類
元素(Eu、Ce、Tb、Sm等)をドープしたものが
一般的であるが、上記の無機材料から作製したEL素子
は、 1)交流駆動が必要(50〜1000Hz)、 2)駆動電圧が高い(〜200V)、 3)フルカラー化が困難(特に青色が問題)、 4)周辺駆動回路のコストが高い、 という問題点を有している。2. Description of the Related Art Conventionally, as a thin film type electroluminescence (EL) element, Zn which is an inorganic material 〓-〓 group compound semiconductor is used.
It is general that S, CaS, SrS, etc. are doped with Mn or a rare earth element (Eu, Ce, Tb, Sm, etc.), which is the emission center, but the EL element made from the above inorganic material is 1). AC drive is required (50 to 1000 Hz), 2) high drive voltage (up to 200 V), 3) full colorization is difficult (especially blue is a problem), and 4) peripheral drive circuit costs are high. ing.
【0003】しかし、近年、上記問題点の改良のため、
有機薄膜を用いたEL素子の開発が行われるようになっ
た。特に、発光効率を高めるため、電極からのキャリア
ー注入の効率向上を目的として電極の種類の最適化を行
い、芳香族ジアミンから成る有機正孔輸送層と8−ヒド
ロキシキノリンのアルミニウム錯体から成る有機発光層
とを設けた有機電界発光素子の開発(Appl.Phy
s.Lett.,51巻,913頁,1987年)によ
り、従来のアントラセン等の単結晶を用いたEL素子と
比較して発光効率の大幅な改善がなされ、実用特性に近
づいている。However, in recent years, in order to improve the above problems,
EL devices using organic thin films have been developed. In particular, in order to improve the light emission efficiency, the type of electrode is optimized for the purpose of improving the efficiency of carrier injection from the electrode, and the organic hole transport layer made of an aromatic diamine and the organic light emission made of an aluminum complex of 8-hydroxyquinoline. Of an organic electroluminescent device provided with a layer (Appl. Phy
s. Lett. , 51, p. 913, 1987), the luminous efficiency has been greatly improved as compared with the conventional EL device using a single crystal such as anthracene, and is close to practical characteristics.
【0004】上記の様な低分子材料を用いた電界発光素
子の他にも、有機発光層の材料として、ポリ(p−フェ
ニレンビニレン)(Nature,347巻,539
頁,1990年他)、ポリ[2−メトキシ−5−(2−
エチルヘキシルオキシ)−1,4−フェニレンビニレ
ン](Appl.Phys.Lett.,58巻,19
82頁他)、ポリ(3−アルキルチオフェン)(Jp
n.J.Appl.Phys,30巻,L1938頁
他)等の高分子材料を用いた電界発光素子の開発や、ポ
リビニルカルバゾール等の高分子に低分子の発光材料と
電子移動材料を混合した素子(応用物理,61巻,10
44頁,1992年)の開発も行われている。In addition to the electroluminescence device using the low molecular weight material as described above, poly (p-phenylene vinylene) (Nature, 347, 539) is used as a material for the organic light emitting layer.
P., 1990, etc.), poly [2-methoxy-5- (2-
Ethylhexyloxy) -1,4-phenylene vinylene] (Appl. Phys. Lett., 58, 19
82, etc.), poly (3-alkylthiophene) (Jp
n. J. Appl. Phys, Vol. 30, L1938 et al.) And other electroluminescent devices using polymer materials, and devices such as polyvinylcarbazole mixed with low-molecular light emitting materials and electron transfer materials (applied physics, Vol. 61). , 10
Page 44, 1992) is also under development.
【0005】以上に示した様な有機電界発光素子におい
ては、通常、陽極としてはインジウム錫酸化物(IT
O)のような透明電極が用いられ、陰極としては電子注
入を効率よく行うために、マグネシウム合金、アルミニ
ウム・リチウム合金、カルシウム等の仕事関数の低い金
属電極が用いられている。これらの陰極材料は大気中の
水分や酸素により容易に酸化し、その結果、陰極が有機
層から剥離し一般にダークスポット(素子の発光面にお
いて発光しない部分をさす)と呼ばれる欠陥が発生す
る。この有機電界発光素子内のダークスポットの数や大
きさは、長期間の素子の保存または駆動の際に増加し、
そのために素子の不安定性をもたらし寿命を短いものと
している。従って、有機電界発光素子の安定性を向上さ
せ信頼性を高めるためには、素子を大気中の水分や酸素
から保護するための封止が必要不可欠である。In the organic electroluminescent device as described above, indium tin oxide (IT) is usually used as the anode.
A transparent electrode such as O) is used, and a metal electrode having a low work function such as a magnesium alloy, an aluminum-lithium alloy, or calcium is used as the cathode in order to efficiently inject electrons. These cathode materials are easily oxidized by moisture and oxygen in the atmosphere, and as a result, the cathode is peeled from the organic layer to generate defects generally referred to as dark spots (indicating a portion that does not emit light on the light emitting surface of the device). The number and size of dark spots in this organic electroluminescent device increase during long-term storage or driving of the device,
For this reason, the device is made unstable and the life is shortened. Therefore, in order to improve the stability and the reliability of the organic electroluminescence device, sealing for protecting the device from moisture and oxygen in the atmosphere is essential.
【0006】有機電界発光素子の封止方法として、アク
リル樹脂でモールドする方法(特開平3−37991号
公報)、気密ケース内にP2O5とともに入れて外気から
遮断する方法(特開平3−261091号公報)、金属
の酸化物等の保護膜を設けた後にガラス板等を用いて気
密にする方法(特開平4−212284号公報)、プラ
ズマ重合膜及び光硬化型樹脂層を設ける方法(特開平5
−36475号公報)、フッ素化炭素からなる不活性液
体中に保持する方法(特開平4−363890号公報
他)、高分子保護膜を設けた後シリコーンオイル中に保
持する方法(特開平5−36475号公報)、無機酸化
物等の保護膜の上にポリビニルアルコールを塗布したガ
ラス板をエポキシ樹脂で接着する方法(特開平5−89
959号公報)、流動パラフィンやシリコーンオイル中
に封じ込める方法(特開平5−129080号公報)、
紫外線硬化型樹脂を用いる方法(特開平5−18275
9号公報他)等が開示されている。As a method for sealing an organic electroluminescence device, a method of molding with an acrylic resin (Japanese Patent Laid-Open No. 3-37991) and a method of putting P 2 O 5 together in an airtight case and shielding from the outside air (Japanese Patent Laid-Open No. 3-37991) 261091), a method of forming a protective film of a metal oxide or the like and then making it airtight using a glass plate or the like (JP-A-4-212284), a method of providing a plasma polymerized film and a photocurable resin layer ( JP-A-5
No. -36475), a method of holding it in an inert liquid made of fluorinated carbon (JP-A-4-363890, etc.), and a method of holding it in a silicone oil after providing a polymer protective film (JP-A-5-36). No. 36475), a method of adhering a glass plate coated with polyvinyl alcohol on a protective film such as an inorganic oxide with an epoxy resin (Japanese Patent Laid-Open No. 5-89).
959), a method of encapsulating in liquid paraffin or silicone oil (JP-A-5-129080),
Method using UV curable resin (Japanese Patent Laid-Open No. 5-18275)
No. 9, etc.) and the like are disclosed.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、従来の
有機電界発光素子の封止方法はいずれも満足できるもの
ではなかった。例えば、吸湿剤とともに気密構造に素子
を封じ込めただけの方法はダークスポットの抑制が不十
分である。また、フッ素化炭素(例えば、商品名フロリ
ナート)やシリコーンオイル中に保持する方法は、液体
を注入する工程を含むことにより封止工程が煩雑になる
だけではなく、ダークスポットの増加も完全には防げ
ず、むしろ液体が陰極と有機層の界面に侵入して陰極の
剥離を促進する問題もある。紫外線硬化樹脂で接着封止
する方法は、接着剤に含まれる溶剤による素子のダメー
ジや紫外線によるダメージがあり、硬化時の応力歪によ
って陰極が有機層から剥離する等が起こり実用的ではな
い。エポキシ樹脂やアクリル樹脂を用いた封止方法は、
硬化による素子のダメージが大きく、封止用の接着剤と
しては不十分なのが現状である。However, none of the conventional methods for sealing an organic electroluminescent device has been satisfactory. For example, the method of simply enclosing the element in an airtight structure together with a hygroscopic agent is insufficient in suppressing dark spots. Further, the method of holding in fluorinated carbon (for example, Fluorinert under the trade name) or silicone oil not only complicates the sealing step by including the step of injecting a liquid, but also increases the number of dark spots completely. There is also a problem in that the liquid cannot penetrate the cathode, and rather the liquid penetrates into the interface between the cathode and the organic layer and promotes peeling of the cathode. The method of adhesion-sealing with an ultraviolet curable resin is not practical because the element contained in the solvent contained in the adhesive may be damaged and the element may be damaged by ultraviolet rays, and the cathode may peel from the organic layer due to stress strain during curing. The sealing method using epoxy resin or acrylic resin is
At present, it is insufficient as an adhesive for sealing because the element is largely damaged by curing.
【0008】有機電界発光素子のダークスポットによる
劣化が改善されず発光特性が不安定なことは、ファクシ
ミリ、複写機、液晶ディスプレイのバックライト等の光
源としては大きな問題であり、フラットパネル・ディス
プレイ等の表示素子としても望ましくない特性である。The deterioration of the organic electroluminescent device due to the dark spots and the unstable emission characteristics are a serious problem for a light source such as a backlight of a facsimile, a copying machine, a liquid crystal display, and a flat panel display. This is also a characteristic not desirable as a display element.
【0009】本発明者は上記実状に鑑み、長期間に渡っ
て安定な発光特性を維持でき、ダークスポットの発生を
抑制することができる有機電界発光素子を提供すること
を目的として鋭意検討した結果、有機電界発光素子に
(イ)JIS K 6911に規定される伸びが100
%以上、(ロ)JIS K 6301に規定されるショ
アーA硬度が20以上、かつ(ハ)ガラス転移点が−4
0℃以下で、−40〜+100℃の温度範囲でゴム状弾
性を示す樹脂を主成分とする封止層を設けることにより
上記課題を解決することができることを見い出し、本発
明を完成するに至った。In view of the above situation, the present inventor has conducted extensive studies for the purpose of providing an organic electroluminescent device capable of maintaining stable light emitting characteristics for a long period of time and suppressing the generation of dark spots. And (b) the organic electroluminescent device has an elongation of 100 defined by JIS K 6911.
% Or more, (b) Shore A hardness specified by JIS K 6301 is 20 or more, and (c) glass transition point is -4.
It was found that the above problems can be solved by providing a sealing layer containing a resin exhibiting rubber-like elasticity in the temperature range of -40 to + 100 ° C at 0 ° C or less, and the present invention has been completed. It was
【0010】[0010]
【課題を解決するための手段】すなわち、本発明の要旨
は、基板上に、陽極、有機発光層及び陰極が積層され、
該積層物の外表面に、内側から順に保護層、封止層、外
気遮断材層が形成されてなる有機電界発光素子であっ
て、前記封止層が(イ)JIS K 6911に規定さ
れる伸びが100%以上、(ロ)JIS K 6301
に規定されるショアーA硬度が20以上、かつ(ハ)ガ
ラス転移点が−40℃以下で、−40〜+100℃の温
度範囲でゴム状弾性を示す樹脂を主成分とすることを特
徴とする有機電界発光素子及びその製造方法、に存す
る。That is, the gist of the present invention is that an anode, an organic light emitting layer and a cathode are laminated on a substrate,
An organic electroluminescence device comprising a protective layer, a sealing layer, and an outside air blocking material layer formed in this order from the inside on the outer surface of the laminate, wherein the sealing layer is defined in (a) JIS K 6911. Elongation of 100% or more, (b) JIS K 6301
The Shore A hardness is 20 or more and (c) the glass transition point is −40 ° C. or lower, and a resin having rubber-like elasticity in a temperature range of −40 to + 100 ° C. is contained as a main component. An organic electroluminescent device and a method for manufacturing the same.
【0011】以下、本発明の有機電界発光素子の製造方
法について、図面を参照しながら説明する。図1は本発
明に用いられる一般的な有機電界発光素子の構造例を模
式的に示す断面図であり、1は基板、2は陽極、3は有
機発光層、4は陰極を各々表わす。Hereinafter, a method for manufacturing an organic electroluminescent device of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view schematically showing a structural example of a general organic electroluminescent device used in the present invention, where 1 is a substrate, 2 is an anode, 3 is an organic light emitting layer, and 4 is a cathode.
【0012】基板1は有機電界発光素子の支持体となる
ものであり、石英やガラスの板、金属板や金属箔、プラ
スチックフィルムやシートなどが用いられる。特にガラ
ス板や、ポリエステル、ポリメタクリレート、ポリカー
ボネート、ポリスルホンなどの透明な合成樹脂の板が好
ましい。合成樹脂基板を使用する場合にはガスバリア性
に留意する必要がある。基板のガスバリヤ性が小さすぎ
ると、基板を通過した外気により有機電界発光素子が劣
化することがあるので好ましくない。このため、合成樹
脂基板の上に緻密なシリコン酸化膜等を設けてガスバリ
ア性を確保する方法も好ましい方法の一つである。The substrate 1 serves as a support for the organic electroluminescence device, and a plate of quartz or glass, a metal plate or metal foil, a plastic film or sheet, etc. is used. In particular, a glass plate and a transparent synthetic resin plate such as polyester, polymethacrylate, polycarbonate, and polysulfone are preferable. When using a synthetic resin substrate, it is necessary to pay attention to the gas barrier property. If the gas barrier property of the substrate is too low, the organic electroluminescent element may deteriorate due to the outside air passing through the substrate, which is not preferable. Therefore, a method of providing a dense silicon oxide film or the like on the synthetic resin substrate to secure the gas barrier property is also a preferable method.
【0013】基板1上には陽極2が設けられるが、陽極
2は有機発光層への正孔注入の役割を果たすものであ
る。この陽極は、通常、アルミニウム、金、銀、ニッケ
ル、パラジウム、白金等の金属、インジウム及び/また
はスズの酸化物などの金属酸化物、ヨウ化銅などのハロ
ゲン化金属、カーボンブラック、あるいは、ポリ(3−
メチルチオフェン)、ポリピロール、ポリアニリン等の
導電性高分子などにより構成される。陽極2の形成は通
常、スパッタリング法、真空蒸着法などにより行われる
ことが多い。また、銀などの金属微粒子、ヨウ化銅など
の微粒子、カーボンブラック、導電性の金属酸化物微粒
子、導電性高分子微粉末などの場合には、適当なバイン
ダー樹脂溶液に分散し、基板1上に塗布することにより
陽極2を形成することもできる。さらに、導電性高分子
の場合は電解重合により直接基板1上に薄膜を形成した
り、基板1上に導電性高分子を塗布して陽極2を形成す
ることもできる(Appl.Phys.Lett.,6
0巻,2711頁,1992年)。陽極2は異なる物質
で積層して形成することも可能である。陽極2の厚み
は、必要とする透明性により異なる。透明性が必要とさ
れる場合は、可視光の透過率を、通常、60%以上、好
ましくは80%以上とすることが望ましく、この場合、
厚みは、通常、5〜1000nm、好ましくは10〜5
00nm程度である。不透明でよい場合は陽極2は基板
1と同一でもよい。また、さらには上記の陽極2の上に
異なる導電材料を積層することも可能である。An anode 2 is provided on the substrate 1, and the anode 2 plays a role of injecting holes into the organic light emitting layer. This anode is usually a metal such as aluminum, gold, silver, nickel, palladium, platinum, a metal oxide such as an oxide of indium and / or tin, a halogenated metal such as copper iodide, carbon black, or poly. (3-
Methylthiophene), polypyrrole, polyaniline, and other conductive polymers. The anode 2 is usually formed by a sputtering method, a vacuum vapor deposition method, or the like. In the case of fine particles of metal such as silver, fine particles of copper iodide, carbon black, fine particles of conductive metal oxide, fine particles of conductive polymer, etc., they are dispersed in an appropriate binder resin solution and then placed on the substrate 1. The anode 2 can also be formed by applying to Further, in the case of a conductive polymer, a thin film may be directly formed on the substrate 1 by electrolytic polymerization, or the conductive polymer may be applied on the substrate 1 to form the anode 2 (Appl. Phys. Lett. , 6
0, 2711, 1992). The anode 2 can also be formed by stacking different materials. The thickness of the anode 2 depends on the required transparency. When transparency is required, the visible light transmittance is usually 60% or more, preferably 80% or more. In this case,
The thickness is usually 5 to 1000 nm, preferably 10 to 5
It is about 00 nm. The anode 2 may be the same as the substrate 1 if it may be opaque. Further, it is also possible to stack different conductive materials on the anode 2.
【0014】陽極2の上には有機発光層3が設けられ
る。有機発光層3は、電界を与えられた電極間におい
て、陽極2から注入された正孔と陰極4から注入された
電子を効率よく輸送して再結合させ、かつ、再結合によ
り効率よく発光する材料から形成される。通常、この有
機発光層3は発光効率の向上のために、図2に示すよう
に、正孔輸送層3aと電子輸送層3bに分割して機能分
離型にすることが行われる(Appl.Phys.Le
tt.,51巻,913頁,1987年)。An organic light emitting layer 3 is provided on the anode 2. The organic light emitting layer 3 efficiently transports and recombines the holes injected from the anode 2 and the electrons injected from the cathode 4 between the electrodes to which an electric field is applied, and emits light efficiently by the recombination. Formed from material. Usually, in order to improve the luminous efficiency, the organic light emitting layer 3 is divided into a hole transporting layer 3a and an electron transporting layer 3b so as to have a function separation type (Appl. Phys). . Le
tt. , 51, 913, 1987).
【0015】上記の機能分離型素子において、正孔輸送
層3aの材料としては、陽極2からの正孔注入効率が高
く、かつ、注入された正孔を効率よく輸送することがで
きる材料であることが必要である。そのためには、イオ
ン化ポテンシャルが小さく、しかも正孔移動度が大き
く、さらに安定性に優れ、トラップとなる不純物が製造
時や使用時に発生しにくいことが要求される。In the above-mentioned function-separated device, the material of the hole transport layer 3a is a material having a high hole injection efficiency from the anode 2 and capable of efficiently transporting the injected holes. It is necessary. For that purpose, it is required that the ionization potential is small, the hole mobility is large, the stability is excellent, and the impurities serving as traps are not easily generated during manufacturing or use.
【0016】このような正孔輸送材料としては、例え
ば、1,1−ビス(4−ジ−p−トリルアミノフェニ
ル)シクロヘキサン等の3級芳香族アミンユニットを連
結した芳香族ジアミン化合物(特開昭59−19439
3号公報)、4,4’−ビス[N−(1−ナフチル)−
N−フェニルアミノ]ビフェニルで代表される2個以上
の3級アミンを含み2個以上の縮合芳香族環が窒素原子
に置換した芳香族アミン(特開平5−234681号公
報)、トリフェニルベンゼンの誘導体でスターバースト
構造を有する芳香族トリアミン(米国特許第4,92
3,774号)、N,N’−ジフェニル−N,N’−ビ
ス(3−メチルフェニル)ビフェニル−4,4’−ジア
ミン等の芳香族ジアミン(米国特許第4,764,62
5号)、α,α,α’,α’−テトラメチル−α,α’
−ビス(4−ジ−p−トリルアミノフェニル)−p−キ
シレン(特開平3−269084号公報)、分子全体と
して立体的に非対称なトリフェニルアミン誘導体(特開
平4−129271号公報)、ピレニル基に芳香族ジア
ミノ基が複数個置換した化合物(特開平4−17539
5号公報)、エチレン基で3級芳香族アミンユニットを
連結した芳香族ジアミン(特開平4−264189号公
報)、スチリル構造を有する芳香族ジアミン(特開平4
−290851号公報)、チオフェン基で芳香族3級ア
ミンユニットを連結したもの(特開平4−304466
号公報)、スターバースト型芳香族トリアミン(特開平
4−308688号公報)、ベンジルフェニル化合物
(特開平4−364153号公報)、フルオレン基で3
級アミンを連結したもの(特開平5−25473号公
報)、トリアミン化合物(特開平5−239455号公
報)、ビスジピリジルアミノビフェニル(特開平5−3
20634号公報)、N,N,N−トリフェニルアミン
誘導体(特開平6−1972号公報)、フェノキサジン
構造を有する芳香族ジアミン(特願平5−290728
号)、ジアミノフェニルフェナントリジン誘導体(特願
平6−45669号)、ヒドラゾン化合物(特開平2−
311591号公報)、シラザン化合物(米国特許第
4,950,950号公報)、シラナミン誘導体(特開
平6−49079号公報)、ホスファミン誘導体(特開
平6−25659号公報)、キナクリドン化合物等が挙
げられる。これらの化合物は、単独で用いてもよいし、
必要に応じて、各々、混合して用いてもよい。As such a hole transport material, for example, an aromatic diamine compound in which a tertiary aromatic amine unit such as 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane is linked (Japanese Patent Application Laid-Open No. 2000-242242) Sho 59-19439
3), 4,4'-bis [N- (1-naphthyl)-
Aromatic amines containing two or more tertiary amines represented by N-phenylamino] biphenyl and having two or more condensed aromatic rings substituted with nitrogen atoms (Japanese Patent Laid-Open No. 5-234681) and triphenylbenzene. An aromatic triamine having a starburst structure as a derivative (US Pat.
3,774), aromatic diamines such as N, N'-diphenyl-N, N'-bis (3-methylphenyl) biphenyl-4,4'-diamine (US Pat. No. 4,764,62).
No. 5), α, α, α ′, α′-tetramethyl-α, α ′
-Bis (4-di-p-tolylaminophenyl) -p-xylene (JP-A-3-269084), triphenylamine derivative which is sterically asymmetric as a whole molecule (JP-A-4-12971), pyrenyl A compound in which a plurality of aromatic diamino groups are substituted in the group (Japanese Patent Laid-Open No. 4-17539).
5), an aromatic diamine in which a tertiary aromatic amine unit is linked by an ethylene group (JP-A-4-264189), and an aromatic diamine having a styryl structure (JP-A-4).
No. 290851), one in which an aromatic tertiary amine unit is linked by a thiophene group (JP-A-4-304466).
No. 3), a starburst type aromatic triamine (JP-A-4-308688), a benzylphenyl compound (JP-A-4-364153), and a fluorene group containing 3
A compound in which a primary amine is linked (JP-A-5-25473), a triamine compound (JP-A-5-239455), and bisdipyridylaminobiphenyl (JP-A-5-3).
20634), N, N, N-triphenylamine derivatives (JP-A-6-1972), aromatic diamines having a phenoxazine structure (Japanese Patent Application No. 5-290728).
No.), a diaminophenylphenanthridine derivative (Japanese Patent Application No. 6-45669), and a hydrazone compound (JP-A-2-
311591), silazane compounds (US Pat. No. 4,950,950), silanamine derivatives (JP-A-6-49079), phosphamine derivatives (JP-A-6-25659), quinacridone compounds and the like. . These compounds may be used alone,
If necessary, they may be mixed and used.
【0017】上記の化合物以外に、正孔輸送層3aの材
料として、ポリビニルカルバゾールやポリシラン(Ap
pl.Phys.Lett.,59巻,2760頁,1
991年)、ポリフォスファゼン(特開平5−3109
49号公報)、ポリアミド(特開平5−310949号
公報)、ポリビニルトリフェニルアミン(特願平5−2
05377)、トリフェニルアミン骨格を有する高分子
(特開平4−133065号公報)、トリフェニルアミ
ン単位をメチレン基等で連結した高分子(Synthe
tic Metals,55−57巻,4163頁,1
993年)、芳香族アミンを含有するポリメタクリレー
ト(J.Polym.Sci.,Polym.Che
m.Ed.,21巻,969頁,1983年)等の高分
子材料が挙げられる。In addition to the above compounds, polyvinylcarbazole and polysilane (Ap) are used as materials for the hole transport layer 3a.
pl. Phys. Lett. , 59, 2760, 1
991), polyphosphazene (JP-A-5-3109)
49), polyamide (JP-A-5-310949), polyvinyltriphenylamine (Japanese Patent Application No. 5-2).
05377), a polymer having a triphenylamine skeleton (JP-A-4-133605), and a polymer in which triphenylamine units are linked by a methylene group or the like (Synthe).
tic Metals, 55-57, 4163, 1
993), polymethacrylates containing aromatic amines (J. Polym. Sci., Polym. Che.
m. Ed. 21: pp. 969, 1983).
【0018】上記の正孔輸送材料を塗布法あるいは真空
蒸着法により前記陽極2上に積層することにより正孔輸
送層3aを形成する。塗布法の場合は、正孔輸送材料を
1種または2種以上と、必要により正孔のトラップにな
らないバインダー樹脂や塗布性改良剤などの添加剤とを
添加し、溶解して塗布溶液を調製し、スピンコート法な
どの方法により陽極2上に塗布し、乾燥して有機正孔輸
送層3aを形成する。バインダー樹脂としては、ポリカ
ーボネート、ポリアリレート、ポリエステル等が挙げら
れる。バインダー樹脂は添加量が多いと正孔移動度を低
下させるので、少ない方が望ましく、通常、50重量%
以下が好ましい。A hole transport layer 3a is formed by laminating the above hole transport material on the anode 2 by a coating method or a vacuum deposition method. In the case of the coating method, one or more hole transporting materials and, if necessary, an additive such as a binder resin or a coatability improving agent that does not become a hole trap are added and dissolved to prepare a coating solution. Then, it is applied on the anode 2 by a method such as a spin coating method and dried to form the organic hole transport layer 3a. Examples of the binder resin include polycarbonate, polyarylate, polyester and the like. The addition amount of the binder resin decreases the hole mobility when it is added in a large amount.
The following are preferred.
【0019】真空蒸着法の場合には、正孔輸送材料を真
空容器内に設置されたルツボに入れ、真空容器内を適当
な真空ポンプで10-4Pa程度にまで排気した後、ル
ツボを加熱して、正孔輸送材料を蒸発させ、ルツボと向
き合って置かれた基板1上の陽極2上に正孔輸送層3a
を形成させる。In the case of the vacuum vapor deposition method, the hole transport material is placed in a crucible installed in a vacuum container, the interior of the vacuum container is evacuated to about 10 −4 Pa by an appropriate vacuum pump, and then the crucible is heated. Then, the hole transport material is evaporated, and the hole transport layer 3a is formed on the anode 2 on the substrate 1 placed facing the crucible.
To form.
【0020】上記正孔輸送層3aを形成する場合、さら
に、アクセプタとして、芳香族カルボン酸の金属錯体及
び/または金属塩(特開平4−320484号公報)、
ベンゾフェノン誘導体およびチオベンゾフェノン誘導体
(特開平5−295361号公報)、フラーレン類(特
開平5−331458号公報)等を10-3〜10重量%
の濃度でドープして、フリーキャリアとしての正孔を生
成させることにより、低電圧駆動を可能にすることがで
きる。When the hole transport layer 3a is formed, a metal complex and / or metal salt of an aromatic carboxylic acid is further used as an acceptor (JP-A-4-320484).
A benzophenone derivative and a thiobenzophenone derivative (JP-A-5-295361), fullerenes (JP-A-5-331458), etc., at 10 -3 to 10% by weight.
It is possible to drive at a low voltage by doping at a concentration of 1 to generate holes as free carriers.
【0021】正孔輸送層3aの膜厚は、通常、10〜3
00nm、好ましくは30〜100nmである。この様
に薄い膜を一様に形成するためには、一般に真空蒸着法
がよく用いられる。The thickness of the hole transport layer 3a is usually 10 to 3
00 nm, preferably 30 to 100 nm. In order to uniformly form such a thin film, the vacuum evaporation method is often used.
【0022】正孔注入の効率をさらに向上させ、かつ、
有機層全体の陽極への付着力を改善させる目的で、正孔
輸送層3aと陽極2との間に正孔注入層3a’を挿入す
ることも行われている(図3)。正孔注入層3a’に用
いられる材料としてはイオン化ポテンシャルが低く、導
電性が高く、さらに陽極上で熱的に安定な薄膜を形成す
る材料が望ましく、フタロシアニン化合物やポルフィリ
ン化合物(特開昭57−51781号公報、特開昭63
−295695号公報)が使用される。正孔注入層3
a’を挿入することで、初期の素子の駆動電圧が下がる
と同時に、素子を定電流で連続駆動した時の電圧上昇も
抑制される効果がある。正孔注入層3a’に正孔輸送層
3aと同様にしてアクセプタをドープすることで導電性
を向上させることも可能である。To further improve the efficiency of hole injection, and
A hole injection layer 3a 'is also inserted between the hole transport layer 3a and the anode 2 for the purpose of improving the adhesion of the entire organic layer to the anode (FIG. 3). As a material used for the hole injection layer 3a ', a material having a low ionization potential, a high conductivity and a thermally stable thin film formed on the anode is desirable, and a phthalocyanine compound or a porphyrin compound (JP-A-57- No. 51781, JP-A-63
No. 295695) is used. Hole injection layer 3
By inserting a ′, it is possible to reduce the driving voltage of the element at the initial stage and at the same time suppress an increase in voltage when the element is continuously driven with a constant current. It is also possible to improve conductivity by doping the hole injection layer 3a ′ with an acceptor in the same manner as the hole transport layer 3a.
【0023】正孔注入層3a’の膜厚は、通常、2〜1
00nm、好ましくは5〜50nmである。この様に薄
い膜を一様に形成するためには、一般に真空蒸着法がよ
く用いられる。正孔輸送層3aの上には電子輸送層3b
が設けられる。電子輸送層3bは、電界を与えられた電
極間において陰極からの電子を効率よく正孔輸送層3a
の方向に輸送することができる化合物より形成される。The thickness of the hole injection layer 3a 'is usually 2-1.
00 nm, preferably 5 to 50 nm. In order to uniformly form such a thin film, the vacuum evaporation method is often used. An electron transport layer 3b is formed on the hole transport layer 3a.
Is provided. The electron-transporting layer 3b efficiently transfers electrons from the cathode between the electrodes to which an electric field is applied.
Formed of a compound that can be transported in the direction of.
【0024】電子輸送層3bに用いられる電子輸送性化
合物としては、陰極4からの電子注入効率が高く、か
つ、注入された電子を効率よく輸送することができる化
合物であることが必要である。そのためには、電子親和
力が大きく、しかも電子移動度が大きく、さらに安定性
に優れトラップとなる不純物が製造時や使用時に発生し
にくい化合物であることが要求される。The electron-transporting compound used in the electron-transporting layer 3b needs to be a compound having a high electron injection efficiency from the cathode 4 and capable of efficiently transporting the injected electrons. For that purpose, it is required that the compound has a high electron affinity, a high electron mobility, excellent stability, and an impurity that becomes a trap and is hard to be generated during the production or the use.
【0025】このような条件を満たす材料としては、テ
トラフェニルブタジエンなどの芳香族化合物(特開昭5
7−51781号公報)、8−ヒドロキシキノリンのア
ルミニウム錯体などの金属錯体(特開昭59−1943
93号公報)、シクロペンタジエン誘導体(特開平2−
289675号公報)、ペリノン誘導体(特開平2−2
89676号公報)、オキサジアゾール誘導体(特開平
2−216791号公報)、ビススチリルベンゼン誘導
体(特開平1−245087号公報、同2−22248
4号公報)、ペリレン誘導体(特開平2−189890
号公報、同3−791号公報)、クマリン化合物(特開
平2−191694号公報、同3−792号公報)、希
土類錯体(特開平1−256584)、ジスチリルピラ
ジン誘導体(特開平2−252793号公報)、p−フ
ェニレン化合物(特開平3−33183号公報)、チア
ジアゾロピリジン誘導体(特開平3−37292号公
報)、ピロロピリジン誘導体(特開平3−37293号
公報)、ナフチリジン誘導体(特開平3−203982
号公報)などが挙げられる。As materials satisfying such conditions, aromatic compounds such as tetraphenyl butadiene (Japanese Patent Laid-Open No. Sho 5 (1999) -58138)
7-51781), a metal complex such as an aluminum complex of 8-hydroxyquinoline (JP-A-59-1943).
93), a cyclopentadiene derivative (JP-A-2-
289675), perinone derivatives (JP-A-2-2)
No. 89676), an oxadiazole derivative (JP-A-2-216791), and a bisstyrylbenzene derivative (JP-A 1-245087, 2-222248).
4), perylene derivative (JP-A-2-189890).
JP-A No. 3-791), coumarin compounds (JP-A-2-191694, JP-A-3-792), rare earth complexes (JP-A-1-256584), and distyrylpyrazine derivatives (JP-A-2-252793). Gazette), p-phenylene compound (JP-A-3-33183), thiadiazolopyridine derivative (JP-A-3-37292), pyrrolopyridine derivative (JP-A-3-37293), naphthyridine derivative (special Kaihei 3-203982
Issue).
【0026】これらの化合物を用いた電子輸送層3b
は、一般に、電子を輸送する役割と、正孔と電子の再結
合の際に発光をもたらす役割を同時に果たすことができ
る。正孔輸送層3aが発光機能を有する場合は、電子輸
送層3bは電子を輸送する役割だけを果たす場合もあ
る。Electron transport layer 3b using these compounds
Can generally play a role of transporting electrons and a role of producing light emission upon recombination of holes and electrons at the same time. When the hole transport layer 3a has a light emitting function, the electron transport layer 3b may serve only to transport electrons.
【0027】素子の発光効率を向上させるとともに発光
色を変える目的で、例えば、8−ヒドロキシキノリンの
アルミニウム錯体をホスト材料として、クマリン等のレ
ーザ用蛍光色素をドープすること(J.Appl.Ph
ys.,65巻,3610頁,1989年)等も行われ
ている。本発明においても上記の有機電子輸送材料をホ
スト材料として各種の蛍光色素を10-3〜10モル%ド
ープすることにより、素子の発光特性をさらに向上させ
ることができる。電子輸送層3bの膜厚は、通常、10
〜200nm、好ましくは30〜100nmである。For the purpose of improving the luminous efficiency of the device and changing the luminescent color, for example, a fluorescent dye for laser such as coumarin is doped with aluminum complex of 8-hydroxyquinoline as a host material (J. Appl. Ph.
ys. , 65, 3610, 1989) and the like. Also in the present invention, the emission characteristics of the device can be further improved by doping the above-mentioned organic electron transport material as a host material with various fluorescent dyes at 10 −3 to 10 mol%. The thickness of the electron transport layer 3b is usually 10
-200 nm, preferably 30-100 nm.
【0028】電子輸送層も正孔輸送層と同様の方法で形
成することができるが、通常は真空蒸着法が用いられ
る。有機電界発光素子の発光効率をさらに向上させる方
法として、電子輸送層3bの上にさらに他の電子輸送層
3cを積層することもできる。この電子輸送層3cに用
いられる化合物には、陰極からの電子注入が容易で、電
子の輸送能力がさらに大きいことが要求される。この様
な電子輸送材料としては、オキサジアゾール誘導体(A
ppl.Phys.Lett.,55巻,1489頁,
1989年他)やそれらをポリメタクリル酸メチル(P
MMA)等の樹脂に分散した系(Appl.Phys.
Lett.,61巻,2793頁,1992年)、フェ
ナントロリン誘導体(特開平5−331459号公
報)、または、n型水素化非晶質炭化シリコン、n型硫
化亜鉛、n型セレン化亜鉛等が挙げられる。電子輸送層
3cの膜厚は、通常、5〜200nm、好ましくは10
〜100nmである。The electron transport layer can be formed in the same manner as the hole transport layer, but the vacuum vapor deposition method is usually used. As a method of further improving the luminous efficiency of the organic electroluminescent device, another electron transport layer 3c can be further stacked on the electron transport layer 3b. The compound used for the electron transport layer 3c is required to be capable of easily injecting electrons from the cathode and have a higher electron transport capability. As such an electron transport material, an oxadiazole derivative (A
ppl. Phys. Lett. , 55, 1489 pages,
1989 and others) and polymethylmethacrylate (P
Systems dispersed in resin such as MMA (Appl. Phys.
Lett. , 61, 2793, 1992), phenanthroline derivative (JP-A-5-331459), n-type hydrogenated amorphous silicon carbide, n-type zinc sulfide, n-type zinc selenide and the like. The thickness of the electron transport layer 3c is usually 5 to 200 nm, preferably 10
-100 nm.
【0029】機能分離を行わない単層型の有機発光層3
としては、先に挙げたポリ(p−フェニレンビニレン)
(Nature,347巻,539頁,1990年
他)、ポリ[2−メトキシ−5−(2−エチルヘキシル
オキシ)−1,4−フェニレンビニレン](Appl.
Phys.Lett.,58巻,1982頁,1991
年他)、ポリ(3−アルキルチオフェン)(Jpn.
J.Appl.Phys,30巻,L1938頁,19
91年他)等の高分子材料や、ポリビニルカルバゾール
等の高分子に発光材料と電子移動材料を混合した系(応
用物理,61巻,1044頁,1992年)等が挙げら
れる。Single-layer organic light-emitting layer 3 without function separation
As the above-mentioned poly (p-phenylene vinylene)
(Nature, 347, 539, 1990 et al.), Poly [2-methoxy-5- (2-ethylhexyloxy) -1,4-phenylenevinylene] (Appl.
Phys. Lett. , 58, 1982, 1991.
Etc.), poly (3-alkylthiophene) (Jpn.
J. Appl. Phys, Volume 30, L1938, 19
1991, etc.), a system in which a light emitting material and an electron transfer material are mixed with a polymer such as polyvinylcarbazole (Applied Physics, 61, 1044, 1992).
【0030】陰極4は、有機発光層3に電子を注入する
役割を果たす。陰極4として用いられる材料は、前記陽
極2に使用される材料を用いることが可能であるが、効
率よく電子注入を行なうには、仕事関数の低い金属が好
ましく、スズ、マグネシウム、インジウム、カルシウ
ム、アルミニウム、銀等の適当な金属またはそれらの合
金が用いられる。陰極4の膜厚は通常、陽極2と同様で
ある。低仕事関数金属から成る陰極を保護する目的で、
この上にさらに、仕事関数が高く大気に対して安定な金
属層を積層することは素子の安定性を増す。この目的の
ために、アルミニウム、銀、ニッケル、クロム、金、白
金等の金属が使われる。The cathode 4 plays a role of injecting electrons into the organic light emitting layer 3. The material used for the cathode 4 may be the material used for the anode 2, but a metal having a low work function is preferable for efficient electron injection, and tin, magnesium, indium, calcium, Suitable metals such as aluminum and silver or alloys thereof are used. The film thickness of the cathode 4 is usually the same as that of the anode 2. For the purpose of protecting the cathode made of low work function metal,
Further, by stacking a metal layer having a high work function and stable on the atmosphere, the stability of the device is increased. Metals such as aluminum, silver, nickel, chromium, gold and platinum are used for this purpose.
【0031】第1〜3図に示した構造以外にも、以下に
示すような層構成の有機電界発光素子が本発明に用いら
れる;Besides the structure shown in FIGS. 1 to 3, an organic electroluminescent device having the following layer structure is used in the present invention;
【0032】[0032]
【表1】 [Table 1]
【0033】上記層構成で、界面層は陰極と有機層との
コンタクトを向上させるためのもので、芳香族ジアミン
化合物(特開平6−267658号公報)、キナクリド
ン化合物(特願平5−116204号)、ナフタセン誘
導体(特願平5−116205号)、有機シリコン化合
物(特願平5−116206号)、有機リン化合物(特
願平5−116207号)、N−フェニルカルバゾール
骨格を有する化合物(特願平6−199562号)、N
−ビニルカルバゾール重合体(特願平6−200942
号)等で構成された層が例示できる。界面層の膜厚は、
通常、2〜100nm、好ましくは5〜30nmであ
る。界面層を設ける代わりに、有機発光層及び電子輸送
層の陰極界面近傍に上記界面層の材料を50重量%以上
含む領域を設けてもよい。In the above-mentioned layer structure, the interface layer is for improving the contact between the cathode and the organic layer. An aromatic diamine compound (JP-A-6-267658) and a quinacridone compound (Japanese Patent Application No. 5-116204). ), A naphthacene derivative (Japanese Patent Application No. 5-116205), an organic silicon compound (Japanese Patent Application No. 5-116206), an organic phosphorus compound (Japanese Patent Application No. 5-116207), a compound having an N-phenylcarbazole skeleton (special No. 6-199562), N
-Vinylcarbazole polymer (Japanese Patent Application No. 6-200942)
No.) and the like. The thickness of the interface layer is
Usually, it is 2 to 100 nm, preferably 5 to 30 nm. Instead of providing the interface layer, a region containing 50% by weight or more of the material of the interface layer may be provided near the cathode interface of the organic light emitting layer and the electron transport layer.
【0034】有機電界発光素子の安定性及び信頼性を向
上させるために素子全体を封止する必要がある。以下
に、本発明の封止方法を図4の構造例を用いて説明す
る。ダークスポットを抑制するためには、先ず、素子を
気密な構造中に置かなければならない。その際に、密閉
された空間内に自由体積があると、ダークスポットの抑
制が困難なことが判明した。この理由としては、陰極4
の有機発光層3に対する付着力が非常に弱いために、陰
極4の近傍に自由体積が存在すると駆動時の発熱等によ
り容易に陰極4が有機発光層3から剥離するためと考え
られる。この点において、不活性気体や不活性液体で封
止する方法ではダークスポットの回避は困難である。従
って、何等かの固体状態の材料で密閉された空間を埋め
尽くす必要があるが、従来のアクリル樹脂、エポキシ樹
脂、シアノアクリレート樹脂、紫外線硬化型樹脂等の接
着剤を用いたのでは、封止層が硬いために硬化時に発生
する硬化収縮歪や内部応力が有機電界発光素子との接着
部界面に集中するために、陰極4の剥離が激しくなった
り、素子が短絡したりする。In order to improve the stability and reliability of the organic electroluminescent device, it is necessary to seal the entire device. The sealing method of the present invention will be described below with reference to the structural example of FIG. In order to suppress dark spots, the device must first be placed in an airtight structure. At that time, it was found that it was difficult to suppress dark spots when there was a free volume in the closed space. The reason for this is that the cathode 4
It is considered that since the adhesive force to the organic light emitting layer 3 is very weak, the cathode 4 is easily separated from the organic light emitting layer 3 due to heat generation during driving when a free volume exists in the vicinity of the cathode 4. In this respect, it is difficult to avoid dark spots by the method of sealing with an inert gas or an inert liquid. Therefore, it is necessary to fill the space sealed with some solid state material, but if you use conventional adhesives such as acrylic resin, epoxy resin, cyanoacrylate resin, UV curable resin, etc. Since the layer is hard, the curing shrinkage strain and internal stress generated at the time of curing are concentrated on the interface of the bonding portion with the organic electroluminescent element, so that the cathode 4 is severely peeled or the element is short-circuited.
【0035】封止層6の材料として従来の封止剤とは異
なる、下記(イ)、(ロ)、(ハ)の条件を満足する樹
脂が有機電界発光素子の封止剤として最適なことを本発
明者は見い出した。 (イ)JIS K 6911に規定される伸びが100
%以上。 (ロ)JIS K 6301に規定されるショアーA硬
度が20以上。 (ハ)ガラス転移点が−40℃以下で、−40〜+10
0℃の温度範囲でゴム状弾性を示す。As a material for the sealing layer 6, a resin satisfying the following conditions (a), (b) and (c), which is different from the conventional sealing agent, is the most suitable as a sealing agent for an organic electroluminescence device. The present inventor found out. (A) The elongation specified in JIS K 6911 is 100.
%that's all. (B) Shore A hardness specified by JIS K 6301 is 20 or more. (C) Glass transition point of -40 ° C or lower, -40 to +10
It exhibits rubber-like elasticity in the temperature range of 0 ° C.
【0036】前記のゴム状弾性とは、通常、著しく小さ
い弾性率と数百%にも及ぶヒズミの可逆弾性域を持つ状
態をいい、例えば、剪断弾性率が107〜109dyne
/cm2(106〜108N/m2)程度となる状態をい
う。前記の特性を満たす封止剤として、変性シリコーン
系弾性接着剤が例示できる。変性シリコーン系弾性接着
剤は反応性シリル基末端を有し、該シリル基が水分等と
反応して架橋する、通称、特殊シリコーン変性ポリマー
と称される樹脂をベースとする接着剤であり、代表的な
変性シリコーン系弾性接着剤としては、反応性シリル基
末端を有するベース樹脂を主とする成分と、シリル基と
反応して結合する官能基を有する化合物を主とする成分
との2成分からなる接着剤が例示できる。前記のシリル
基と反応して結合する官能基を有する化合物の好ましい
例として、ビスフェノールAジグリシジルエーテル等の
エポキシ樹脂が挙げられる。The above-mentioned rubber-like elasticity usually means a state having a remarkably small elastic modulus and a reversible elastic region of a strain up to several hundreds%, for example, a shear elastic modulus of 10 7 to 10 9 dyne.
/ Cm 2 (10 6 to 10 8 N / m 2 ) or so. A modified silicone-based elastic adhesive can be exemplified as the sealing agent satisfying the above characteristics. A modified silicone-based elastic adhesive is an adhesive based on a resin that has a reactive silyl group terminal and that the silyl group reacts with water to crosslink, commonly known as a special silicone-modified polymer. As a typical modified silicone-based elastic adhesive, there are two components: a component mainly composed of a base resin having a reactive silyl group terminal and a component mainly composed of a compound having a functional group which reacts with a silyl group to bond. Examples of the adhesive include Preferred examples of the compound having a functional group that reacts with and bonds to the silyl group include epoxy resins such as bisphenol A diglycidyl ether.
【0037】反応性シリル基末端を有するベース樹脂と
してはポリプロピレンオキシドの末端をシリル変性した
樹脂、例えば以下の構造式に示す化合物、As the base resin having a reactive silyl group terminal, a resin obtained by silyl-modifying the terminal of polypropylene oxide, for example, a compound represented by the following structural formula,
【0038】[0038]
【化1】 Embedded image
【0039】が例示できる。このポリマーは、水分との
加水分解反応により分子鎖延長反応と架橋反応が進行し
てゴム状弾性体となる。上記に示した変性シリコーン系
弾性接着剤のガラス転移温度は約−60℃であり、硬化
後の特性としては−60℃から120℃までの温度範囲
でゴム状弾性を示し、従来のエポキシ樹脂と比べて約3
ケタ小さい剛性率を示し、ショアー硬度は40〜90の
範囲である。この結果、この変性シリコーン系弾性接着
剤の特徴としては、硬化時に発生する硬化収縮歪や外部
からの機械的応力と被着剤との線膨張係数の差等から発
生する内部応力歪を接着層で吸収分散させ、接着部界面
の残留応力が小さく、適度な接着力で陰極4を有機発光
層3に押し付け、陰極4の剥離を防ぐ効果が挙げられ
る。さらに、サーマルショックやヒートサイクルにも強
く信頼性の高い接着剤である。Can be exemplified. This polymer undergoes a molecular chain extension reaction and a cross-linking reaction due to a hydrolysis reaction with water to become a rubber-like elastic body. The above-mentioned modified silicone-based elastic adhesive has a glass transition temperature of about −60 ° C., and shows a rubber-like elasticity in the temperature range of −60 ° C. to 120 ° C. as a characteristic after curing, and a conventional epoxy resin. About 3
It shows a small rigidity and a Shore hardness in the range of 40 to 90. As a result, as a characteristic of this modified silicone-based elastic adhesive, curing shrinkage strain generated at the time of curing, internal stress strain generated from external mechanical stress and difference in linear expansion coefficient with the adherend, etc. The effect of preventing the peeling of the cathode 4 is to absorb and disperse it, to reduce the residual stress at the interface of the adhesive portion, to press the cathode 4 against the organic light emitting layer 3 with an appropriate adhesive force. Furthermore, it is a highly reliable adhesive that is resistant to thermal shock and heat cycles.
【0040】具体的な変性シリコーン系弾性接着剤とし
ては、セメダイン社のPM165、PM200、PM4
00、EP001、コニシ社のMOS7等の商品名で市
販されている弾性接着剤が挙げられる。また硬化速度を
さらに大きくするためにシアノアクリレートをさらに配
合したセメダイン社のペグα(商品名)等も封止用接着
剤として効果的である。これらは通常、常温硬化型であ
る。Specific modified silicone-based elastic adhesives include PM165, PM200 and PM4 manufactured by Cemedine.
Examples thereof include elastic adhesives marketed under the trade names of 00, EP001, and Konishi's MOS7. Further, Peg α (trade name) manufactured by Cemedine Co., which further contains cyanoacrylate in order to further increase the curing speed, is also effective as an adhesive for sealing. These are usually room temperature curable.
【0041】封止層としての効果をさらに高めるため
に、フィラーとしてシリカゲル、ゼオライト、塩化カル
シウム、活性炭、ナイロン及びポリビニルアルコール等
の吸湿剤を上記の変性シリコーーン系弾性接着剤に含有
させることもさらに効果的である。フィラーの含有量と
しては、通常、10〜50重量%の範囲が好ましい。In order to further enhance the effect as the sealing layer, it is further effective to add a hygroscopic agent such as silica gel, zeolite, calcium chloride, activated carbon, nylon and polyvinyl alcohol as a filler to the above modified silicone elastic adhesive. Target. The content of the filler is usually preferably 10 to 50% by weight.
【0042】前記封止層6を設ける際に、陰極4にかか
る応力を緩和し、さらに、封止層に用いられる接着剤の
化学成分と素子の反応を抑制して素子に対するダメージ
を防ぐ目的で、陰極4と封止層6の間に保護層5を設け
ることが必要である。保護層5の材料としては、電気絶
縁性を有しかつ膜形状が安定で素子にダメージを与えな
い材料であれば無機材料でも有機材料でもよい。保護層
5の材料の具体例としては、金属の酸化物(特開平4−
212284号公報、特開平4−73886号公報、特
開平5−335080号公報)、金属のフッ化物(特開
平4−212284号公報)、金属の硫化物(特開平4
−212284号公報)、金属の窒化物(特開平4−7
3886号公報)、高分子(特開平4−137483号
公報、特開平4−206386号公報、特開平4−23
3192号公報、特開平4−267097号公報、特開
平4−355096号公報)、プラズマ重合膜(特開平
5−101886号公報)、有機シリコン化合物、有機
電界発光素子の有機組成物等が挙げられるが、これらに
限定されるものではない。保護層5の膜厚は、通常、5
0nm〜10μm、好ましくは、100nm〜1μmで
ある。When the sealing layer 6 is provided, the stress applied to the cathode 4 is relaxed, and further, the reaction between the chemical component of the adhesive used for the sealing layer and the element is suppressed to prevent damage to the element. It is necessary to provide the protective layer 5 between the cathode 4 and the sealing layer 6. The material of the protective layer 5 may be an inorganic material or an organic material as long as it is a material that has electrical insulation properties, a stable film shape, and does not damage the device. Specific examples of the material of the protective layer 5 include metal oxides (Japanese Patent Application Laid-Open No. Hei 4-
212284, JP-A-4-73886, JP-A-5-335080), metal fluoride (JP-A-4-212284), metal sulfide (JP-A-4).
-212284), metal nitrides (JP-A-4-7)
3886), polymers (JP-A-4-137483, JP-A-4-206386, JP-A-4-23).
3192, JP-A-4-267097, JP-A-4-355096), plasma polymerized film (JP-A-5-101886), organic silicon compounds, organic compositions of organic electroluminescent elements, and the like. However, it is not limited thereto. The thickness of the protective layer 5 is usually 5
It is 0 nm to 10 μm, preferably 100 nm to 1 μm.
【0043】有機電界発光素子の上に保護層5を設け、
その後封止層6を設けた後、素子を外気から遮断する外
気遮断材層7を適当な接着剤8を用いて基板1に貼り合
わせる。外気遮断材層には基板と同様にガスバリア性の
あることが要求される。このため通常は電気絶縁性ガラ
ス板や、緻密なシリコン酸化膜等が設けられた電気絶縁
性の樹脂板やフィルムが使用される。接着剤8としては
ガスバリア性を有するものであればよく、例えば、エポ
キシ系接着剤、アクリル系接着剤、ポリウレタン系接着
剤、変性シリコーン系弾性接着剤等が挙げられる。A protective layer 5 is provided on the organic electroluminescent device,
Then, after providing the sealing layer 6, the outside air blocking material layer 7 for blocking the element from the outside air is attached to the substrate 1 by using an appropriate adhesive 8. The outside air blocking material layer is required to have a gas barrier property like the substrate. Therefore, an electrically insulating glass plate or an electrically insulating resin plate or film provided with a dense silicon oxide film or the like is usually used. The adhesive 8 may have any gas barrier property, and examples thereof include an epoxy adhesive, an acrylic adhesive, a polyurethane adhesive, and a modified silicone elastic adhesive.
【0044】上記の封止方法を実際の素子作製に適用す
る際には、素子が短絡する場合が有り得る。これは、例
えば、有機発光層における空隙欠陥や作製時のゴミによ
る欠陥等が存在すると、その欠陥近傍にある陰極が封止
層からの力で空隙空間内に陥没し、結果として陰極と陽
極が短絡することによる。しかしながら、陰極4の膜厚
が有機発光層3の膜厚より小さい場合は、陰極は陥没時
に断線を起こし短絡とはならない。従って、陰極4の膜
厚が有機発光層3の膜厚より薄いことが好ましい。この
短絡現象は陽極2の表面粗さにも関係しており、陽極2
に山谷状のうねりがあると、例えば、陽極2の山の斜面
上では、有機発光層3は基板1に対して垂直に堆積され
るが、陽極2の山の斜面に対して垂直な方向で見ると、
実質上斜面の傾き分だけ有機層の膜厚は減少することに
なる。このことから、陽極2の表面粗さは基板1の表面
粗さ程度に抑えられていることが望ましく、10点平均
粗さRz(JISで定義される)が10nm以下である
ことが好ましい。When the above-mentioned sealing method is applied to actual device fabrication, the device may be short-circuited. This is because, for example, when there is a void defect in the organic light emitting layer or a defect due to dust during fabrication, the cathode near the defect is depressed into the void space by the force from the sealing layer, and as a result, the cathode and the anode are separated. Due to a short circuit. However, when the film thickness of the cathode 4 is smaller than the film thickness of the organic light emitting layer 3, the cathode breaks when it is depressed and a short circuit does not occur. Therefore, the thickness of the cathode 4 is preferably smaller than that of the organic light emitting layer 3. This short circuit phenomenon is also related to the surface roughness of the anode 2.
If there are ridges and valleys in the ridge, for example, the organic light emitting layer 3 is deposited vertically on the substrate 1 on the slope of the mountain of the anode 2, but in the direction perpendicular to the slope of the mountain of the anode 2. Looking,
The film thickness of the organic layer is reduced by the inclination of the slope. From this, it is desirable that the surface roughness of the anode 2 is suppressed to about the surface roughness of the substrate 1, and the 10-point average roughness Rz (defined by JIS) is preferably 10 nm or less.
【0045】本発明は、有機電界発光素子が、単一の素
子、アレイ状に配置された構造からなる素子、陽極と陰
極がX−Yマトリックス状に配置された構造のいずれに
おいても適用することができる。The present invention can be applied to any one of the organic electroluminescence device, a single device, a device having a structure arranged in an array, and a structure having an anode and a cathode arranged in an XY matrix. You can
【0046】[0046]
【実施例】次に、本発明を実施例によって更に具体的に
説明するが、本発明はその要旨を越えない限り、以下の
実施例の記載に限定されるものではない。EXAMPLES Next, the present invention will be described more specifically by way of examples, but the present invention is not limited to the description of the following examples unless it exceeds the gist.
【0047】実施例1 図2に示す構造を有する有機電界発光素子を以下の方法
で作製した。ガラス基板上にインジウム・スズ酸化物
(ITO)透明導電膜を120nm堆積したもの(ジオ
マテック社製;電子ビーム成膜品;シート抵抗15Ω)
により、触針式表面粗さ計(ランクテーラーホブソン社
製タリステップ)によりITO表面の十点平均粗さRz
(JIS B0601)を測定したところ7.4nmで
あった。このITOガラス基板を通常のフォトリソグラ
フィ技術と塩酸エッチングを用いて2mm幅のストライ
プにパターニングして陽極を形成した。パターン形成し
たITO基板を、アセトンによる超音波洗浄、純水によ
る水洗、イソプロピルアルコールによる超音波洗浄の順
で洗浄後、窒素ブローで乾燥させ、最後に紫外線オゾン
洗浄を行って、真空蒸着装置内に設置した。装置の粗排
気を油回転ポンプにより行った後、装置内の真空度が2
×10-6Torr(約2.7×10 -4Pa)以下になる
まで液体窒素トラップを備えた油拡散ポンプを用いて排
気した。上記装置内に配置されたセラミックるつぼに入
れた、以下に示す、4,4’−ビス[N−(1−ナフチ
ル)−N−フェニルアミノ]ビフェニル(H1)Example 1 An organic electroluminescent device having the structure shown in FIG. 2 was prepared by the following method.
It was made in. Indium tin oxide on glass substrate
(ITO) transparent conductive film deposited to 120 nm (Geo)
Made by MATEC Co., Ltd .; Electron beam coating product; Sheet resistance 15Ω)
Stylus-type surface roughness tester (Rank Taylor Hobson
Ten-point average roughness Rz of ITO surface
When (JIS B0601) was measured, it was 7.4 nm.
there were. This ITO glass substrate is used for normal photolithography.
A strike of 2mm width using Phy technology and hydrochloric acid etching
To form an anode. Pattern formed
The ITO substrate was ultrasonically cleaned with acetone and deionized with pure water.
Cleaning with water and ultrasonic cleaning with isopropyl alcohol
After cleaning with, dry with nitrogen blow, and finally ultraviolet ozone.
It was washed and placed in a vacuum evaporation apparatus. Rough discharge of equipment
After the air is pumped by the oil rotary pump, the degree of vacuum in the device is 2
× 10-6Torr (about 2.7 × 10 -FourPa) or less
Drain using an oil diffusion pump equipped with a liquid nitrogen trap
I noticed. Enter the ceramic crucible placed in the above equipment.
4,4'-bis [N- (1-naphthyl) shown below.
) -N-Phenylamino] biphenyl (H1)
【0048】[0048]
【化2】 Embedded image
【0049】をるつぼの周囲のタンタル線ヒーターで加
熱して蒸着を行った。この時のるつぼの温度は、250
〜260℃の範囲で制御した。蒸着時の真空度1.7×
10-6Torr(約2.3×10-4Pa)、蒸着時間3
分30秒で膜厚60nmの正孔輸送層3aを得た。The vapor deposition was performed by heating with a tantalum wire heater around the crucible. The temperature of the crucible at this time is 250
Control was performed in the range of ~ 260 ° C. Degree of vacuum during vapor deposition 1.7 ×
10 -6 Torr (about 2.3 × 10 -4 Pa), deposition time 3
The hole transport layer 3a having a film thickness of 60 nm was obtained in 30 minutes.
【0050】次に、発光機能を有する電子輸送層3bの
材料として、以下の構造式に示すアルミニウムの8−ヒ
ドロキシキノリン錯体、Al(C9H6NO)3(E1)、Next, as a material of the electron transport layer 3b having a light emitting function, aluminum 8-hydroxyquinoline complex represented by the following structural formula, Al (C 9 H 6 NO) 3 (E1),
【0051】[0051]
【化3】 Embedded image
【0052】を上記正孔輸送層3aの上に同様にして蒸
着を行った。この時のるつぼの温度は270〜300℃
の範囲で制御した。蒸着時の真空度は1.3×10-6T
orr(約1.7×10-4Pa)、蒸着時間は3分10
秒で、蒸着された電子輸送層3bの膜厚は75nmであ
った。上記の正孔輸送層3a及び電子輸送層3bを真空
蒸着する時の基板温度は室温に保持した。The above was vapor-deposited on the hole transport layer 3a in the same manner. The temperature of the crucible at this time is 270-300 ° C
Controlled in the range of. The degree of vacuum during vapor deposition is 1.3 × 10 -6 T
orr (about 1.7 × 10 −4 Pa), deposition time is 3 minutes 10
In seconds, the film thickness of the vapor-deposited electron transport layer 3b was 75 nm. The substrate temperature during vacuum deposition of the hole transport layer 3a and the electron transport layer 3b was kept at room temperature.
【0053】ここで、電子輸送層3bまでの蒸着を行っ
た素子を一度前記真空蒸着装置内より大気中に取り出し
て、陰極蒸着用のマスクとして2mm幅のストライプ状
シャドーマスクを、陽極2のITOストライプとは直交
するように素子に密着させて、別の真空蒸着装置内に設
置して有機層と同様にして装置内の真空度が2×10 -6
Torr(約2.7×10-4Pa)以下になるまで排気
した。続いて、陰極4として、マグネシウムと銀の合金
電極を2元同時蒸着法によって膜厚140nmとなるよ
うに蒸着した。蒸着はモリブデンボートを用いて、真空
度1×10-5Torr(約1.3×10-3Pa)、蒸着
時間3分20秒で行った。また、マグネシウムと銀の原
子比は10:1.2とした。さらに続いて、装置の真空
を破らないで、アルミニウムをモリブデンボートを用い
て110nmの膜厚でマグネシウム・銀合金膜の上に積
層して陰極4を完成させた。アルミニウム蒸着時の真空
度は1.5×10-5Torr(約2.0×10-3P
a)、蒸着時間は1分20秒であった。以上のマグネシ
ウム・銀合金とアルミニウムの2層型陰極の蒸着時の基
板温度は室温に保持した。Here, vapor deposition up to the electron transport layer 3b is performed.
Once removed the element from the vacuum vapor deposition device into the atmosphere.
2mm wide stripes as a mask for cathode deposition
The shadow mask is orthogonal to the ITO stripe on the anode 2.
To the device, and place it in another vacuum deposition device.
Place it in the same manner as the organic layer, and the vacuum degree in the device is 2 × 10 -6
Torr (about 2.7 × 10-FourExhaust until below Pa)
did. Then, as the cathode 4, an alloy of magnesium and silver
The electrode will be 140nm thick by the two-source simultaneous vapor deposition method.
It was vapor-deposited. For vapor deposition, use a molybdenum boat and vacuum.
1 × 10-FiveTorr (about 1.3 × 10-3Pa), vapor deposition
It took 3 minutes and 20 seconds. Also, the source of magnesium and silver
The child ratio was 10: 1.2. Further on, the vacuum of the device
Use the molybdenum boat to break the aluminum
With a thickness of 110 nm on the magnesium-silver alloy film
Layered to complete the cathode 4. Vacuum for aluminum deposition
Degree is 1.5 × 10-FiveTorr (about 2.0 × 10-3P
a), the vapor deposition time was 1 minute and 20 seconds. More magnesi
Base for vapor deposition of two-layer cathode of um-silver alloy and aluminum
The plate temperature was kept at room temperature.
【0054】以上の様にして、2mm×2mmのサイズ
の有機電界発光素子が得られた。この素子を陰極蒸着装
置から取り出した後、次に素子の封止を行った。先ず、
既述の有機層蒸着装置に再び上記素子を設置した後、こ
れまでに示したのと同様にして、化合物(H1)を膜厚
150nmで陰極4の上に積層して、保護層5とした。
この時の真空度は1.5×10-6Torr(約2.0×
10-4Pa)、蒸着時間は7分30秒、基板温度は室温
であった。素子を上記装置より大気中に取り出して、窒
素グローブボックス中に入れて以下の作業を行った。As described above, an organic electroluminescence device having a size of 2 mm × 2 mm was obtained. After taking out this device from the cathode vapor deposition apparatus, the device was then sealed. First,
After the above-mentioned element was installed again in the above-mentioned organic layer vapor deposition apparatus, the compound (H1) was laminated on the cathode 4 to a thickness of 150 nm on the cathode 4 in the same manner as described above to form the protective layer 5. .
At this time, the degree of vacuum is 1.5 × 10 −6 Torr (about 2.0 ×
10 −4 Pa), the vapor deposition time was 7 minutes and 30 seconds, and the substrate temperature was room temperature. The device was taken out of the apparatus into the atmosphere, put in a nitrogen glove box, and the following work was performed.
【0055】二液混合型の変性シリコーン系弾性接着剤
(セメダイン社製、商品名EP001)を適当量混合し
た後、重量比で約30%のシリカゲル粉末(粒径50〜
300μm)をフィラーとしてさらに加えた後、保護層
5の上に厚さ約1mmで塗布して封止層6とした。な
お、該弾性接着剤により得られた樹脂はJIS K 6
911に規定される伸びが200%であり、JIS K
6301に規定されるショアーA硬度が78であり、
ガラス転移点が−60℃であり、−40〜+100℃の
温度領域でゴム状弾性を示した。室温で40分硬化させ
た後、外気遮断材層7として厚さ1.1mmのガラス板
を、接着部分8にエポキシ樹脂(チバガイギー社製、商
品名アラルダイト)を用いて貼り合わせ、素子の封止を
完了させた。After mixing an appropriate amount of a two-component mixed type modified silicone elastic adhesive (made by Cemedine, trade name EP001), about 30% by weight of silica gel powder (particle size 50 to 50).
300 μm) was further added as a filler, and then coated on the protective layer 5 in a thickness of about 1 mm to form a sealing layer 6. The resin obtained by the elastic adhesive is JIS K 6
The elongation specified in 911 is 200%, and JIS K
6301 has a Shore A hardness of 78,
It had a glass transition point of -60 ° C and exhibited rubber-like elasticity in the temperature range of -40 to + 100 ° C. After curing at room temperature for 40 minutes, a glass plate having a thickness of 1.1 mm as the outside air barrier layer 7 is attached to the adhesive portion 8 using an epoxy resin (Ciba-Geigy, trade name Araldite) to seal the element. Was completed.
【0056】この様にして得られた有機電界発光素子を
大気中で室温保存して、陽極2にプラス、陰極4にマイ
ナスの直流電圧を印加して発光させ、発光特性とダーク
スポットの発生の経時変化を測定した。ダークスポット
の測定は、素子の発光面をCCDカメラにより撮影した
後、画像解析により2値化して定量化を行った。The organic electroluminescence device thus obtained was stored at room temperature in the atmosphere, and a positive DC voltage was applied to the anode 2 and a negative DC voltage was applied to the cathode 4 to cause the device to emit light. The change with time was measured. For the measurement of the dark spot, the light emitting surface of the device was photographed by a CCD camera and then binarized by image analysis for quantification.
【0057】11Vを素子に印加した時の発光輝度の経
時変化を図5に、ダークスポットの経時変化を図6に示
す。60日間の大気保存後でも発光輝度は初期輝度の1
47cd/m2 に対して140cd/m2 とほとんど低
下がみられず、ダークスポットは60日後でも全発光面
積の1%未満であった。FIG. 5 shows the time-dependent change in the emission luminance when 11 V was applied to the device, and FIG. 6 shows the time-dependent change in the dark spot. Even after being stored in the atmosphere for 60 days, the emission brightness is 1 of the initial brightness.
Almost no decrease was observed at 140 cd / m 2 with respect to 47 cd / m 2, and the dark spot was less than 1% of the total light emitting area even after 60 days.
【0058】比較例1 封止層6の材料としてエポキシ樹脂(チバガイギー社
製、商品名アラルダイト)を用いた他は実施例1と同様
にして封止素子を作製した。なお、該エポキシ樹脂はゴ
ム状弾性を示さなかった。この素子に直流8Vを印加し
た時の発光輝度の経時変化を図5に、ダークスポットの
経時変化を図6に示す。60日間の大気保存後では発光
輝度は初期輝度の282cd/m2 に対して103cd
/m2 と40%以下に低下し、ダークスポットは60日
後では全発光面積の46%にも達した。Comparative Example 1 A sealing element was produced in the same manner as in Example 1 except that an epoxy resin (manufactured by Ciba-Geigy, trade name Araldite) was used as the material of the sealing layer 6. The epoxy resin did not show rubber-like elasticity. FIG. 5 shows the time-dependent change in the emission luminance when DC 8 V was applied to this element, and FIG. 6 shows the time-dependent change in the dark spot. After being stored in the atmosphere for 60 days, the emission luminance was 103 cd compared to the initial luminance of 282 cd / m 2 .
/ M 2 and decreased to 40% or less, and the dark spot reached 46% of the total light emitting area after 60 days.
【0059】実施例2 図3に示す構造を有する有機電界発光素子を以下の方法
で作製した。実施例1と同様にしてパターニング加工し
たITOガラス基板を真空蒸着装置内に設置した。装置
の粗排気を油回転ポンプにより行った後、装置内の真空
度が2×10-6Torr(約2.7×10-4Pa)以下
になるまで液体窒素トラップを備えた油拡散ポンプを用
いて排気した。上記装置内に配置されたモリブデンボー
トに入れた以下に示す銅フタロシアニン(H2)(結晶
形はβ型)Example 2 An organic electroluminescent device having the structure shown in FIG. 3 was produced by the following method. An ITO glass substrate patterned in the same manner as in Example 1 was placed in a vacuum vapor deposition device. After performing rough evacuation of the equipment with an oil rotary pump, install an oil diffusion pump equipped with a liquid nitrogen trap until the degree of vacuum inside the equipment becomes 2 × 10 −6 Torr (about 2.7 × 10 −4 Pa) or less. Evacuated using. Copper phthalocyanine (H2) shown below placed in a molybdenum boat arranged in the above-mentioned device (crystal form is β type)
【0060】[0060]
【化4】 [Chemical 4]
【0061】を加熱して蒸着を行った。真空度2×10
-6Torr(約2.7×10-4Pa)、蒸着時間55秒
で蒸着を行ない、膜厚20nmの正孔注入層3a’を得
た。次に、正孔輸送層3aとしてセラミックるつぼに入
れた化合物(H1)を実施例1と同様にして上記の正孔
注入層3a’の上に積層した。真空度1.5×10 -6T
orr(約2.0×10-4Pa)、蒸着時間3分30秒
で蒸着を行ない、膜厚60nmの正孔輸送層3aを得
た。Was vapor-deposited by heating. Vacuum degree 2 × 10
-6Torr (about 2.7 × 10-FourPa), deposition time 55 seconds
By vapor deposition to obtain a hole injection layer 3a 'with a thickness of 20 nm.
Was. Next, as a hole transport layer 3a, it is put in a ceramic crucible.
The compound (H1) prepared above was treated in the same manner as in Example 1 to obtain the above-mentioned holes.
It was stacked on the injection layer 3a '. Vacuum degree 1.5 × 10 -6T
orr (about 2.0 × 10-FourPa), deposition time 3 minutes 30 seconds
Is evaporated to obtain a hole transport layer 3a having a film thickness of 60 nm.
Was.
【0062】引続いて、発光機能を有する電子輸送層3
bを化合物(E1)を用いて、実施例1と同様にして正
孔輸送層3aの上に積層した。真空度1.5×10-6T
orr(約2.0×10-4Pa)、蒸着時間2分10秒
で蒸着を行ない、膜厚は75nmの電子輸送層3bを得
た。Subsequently, the electron transport layer 3 having a light emitting function.
b was laminated on the hole transport layer 3a in the same manner as in Example 1 using the compound (E1). Vacuum degree 1.5 × 10 -6 T
Vapor deposition was performed at orrr (about 2.0 × 10 −4 Pa) for a vapor deposition time of 2 minutes and 10 seconds to obtain an electron transport layer 3b having a film thickness of 75 nm.
【0063】上記の正孔注入層3a’、正孔輸送層3a
及び電子輸送層3bを真空蒸着する時の基板温度は室温
に保持した。ここで、電子輸送層3bまでの蒸着を行っ
た素子を一度前記真空蒸着装置内より大気中に取り出し
て、陰極蒸着用のマスクとして2mm幅のストライプ状
シャドーマスクを、陽極のITOストライプとは直交す
るように素子に密着させて、別の真空蒸着装置内に設置
して陰極4を以下の様に形成した。先ず、マグネシウム
と銀の合金電極を2元同時蒸着法によって膜厚55nm
となるように蒸着した。蒸着はモリブデンボートを用
い、真空度1×10-5Torr(約1.3×10 -3P
a)、蒸着時間1分15秒で、マグネシウムと銀の原子
比を10:1として行なった。さらに続いて、装置の真
空を破らないで、アルミニウムをモリブデンボートを用
いて50nmの膜厚でマグネシウム・銀合金膜の上に積
層して陰極4を完成させた。アルミニウム蒸着時の真空
度は1.5×10-5Torr(約2.0×10-3P
a)、蒸着時間は1分15秒であった。以上のマグネシ
ウム・銀合金とアルミニウムの2層型陰極の蒸着時の基
板温度は室温に保持した。The above hole injection layer 3a 'and hole transport layer 3a.
And the substrate temperature when vacuum-depositing the electron transport layer 3b is room temperature.
Held in. Here, vapor deposition up to the electron transport layer 3b is performed.
Once removed the element from the vacuum vapor deposition device into the atmosphere.
2mm wide stripes as a mask for cathode deposition
Place the shadow mask orthogonal to the ITO stripe on the anode.
Close to the device as shown, and set it in another vacuum evaporation system
Then, the cathode 4 was formed as follows. First, magnesium
55nm film thickness of silver and silver alloy electrode by two-source simultaneous vapor deposition method
Was deposited so that Molybdenum boat is used for vapor deposition
Vacuum degree 1 × 10-FiveTorr (about 1.3 × 10 -3P
a), vapor deposition time of 1 minute and 15 seconds, magnesium and silver atoms
The ratio was 10: 1. Further on, the true
Use aluminum molybdenum boat without breaking the sky
A 50 nm thick film on the magnesium-silver alloy film.
Layered to complete the cathode 4. Vacuum for aluminum deposition
Degree is 1.5 × 10-FiveTorr (about 2.0 × 10-3P
a), the vapor deposition time was 1 minute and 15 seconds. More magnesi
Base for vapor deposition of two-layer cathode of um-silver alloy and aluminum
The plate temperature was kept at room temperature.
【0064】以上の様にして、2mm×2mmのサイズ
の有機電界発光素子が得られた。この素子を陰極蒸着装
置から取り出した後、次に素子の封止を行った。先ず、
既述の有機層蒸着装置に再び上記素子を設置した後、こ
れまでに示したのと同様にして、化合物(E1)を膜厚
200nmで陰極4の上に積層して、保護層5とした。
この時の真空度は2×10-6Torr(約2.7×10
-4Pa)、蒸着時間は6分10秒で、基板温度は室温で
あった。素子を上記装置より大気中に取り出して、窒素
グローブボックス中に入れて実施例1と同様の方法で封
止を行った。As described above, an organic electroluminescence device having a size of 2 mm × 2 mm was obtained. After taking out this device from the cathode vapor deposition apparatus, the device was then sealed. First,
After the above element was installed again in the above-mentioned organic layer vapor deposition apparatus, the compound (E1) was laminated on the cathode 4 in a thickness of 200 nm to form the protective layer 5 in the same manner as described above. .
At this time, the degree of vacuum is 2 × 10 −6 Torr (about 2.7 × 10
-4 Pa), the vapor deposition time was 6 minutes and 10 seconds, and the substrate temperature was room temperature. The device was taken out of the apparatus into the atmosphere, placed in a nitrogen glove box, and sealed in the same manner as in Example 1.
【0065】この様にして得られた有機電界発光素子を
大気中において、定電流駆動で電流密度を15mA/c
m2 として直流連続駆動させた。この時の初期輝度は3
70cd/m2 であった。駆動時の輝度の経時変化を図
7に示す。570時間連続駆動後のダークスポットは
0.1%未満であった。The thus obtained organic electroluminescent device was driven in the atmosphere at a constant current to obtain a current density of 15 mA / c.
DC was continuously driven as m 2 . The initial brightness at this time is 3
It was 70 cd / m 2 . FIG. 7 shows a change with time in luminance during driving. The dark spot after continuous driving for 570 hours was less than 0.1%.
【0066】比較例2 封止層6に用いる封止剤をシリコーンオイル(信越シリ
コーン社製、商品名KF−54)中にシリカゲル粉末を
入れた封止剤に変えた他は実施例2と同様にして封止素
子を作製した。この素子を大気中において、定電流駆動
で電流密度を15mA/cm2 として直流連続駆動させ
た。この時の初期輝度は360cd/m 2 であった。駆
動時の輝度の経時変化を図7に示す。333時間駆動後
でダークスポットは54%に達した。Comparative Example 2 The sealing agent used for the sealing layer 6 was silicone oil (Shin-Etsu Silicon).
Silica gel powder in corn company, trade name KF-54)
A sealing element was prepared in the same manner as in Example 2 except that the sealing agent was changed.
I made a child. Constant current drive of this element in the atmosphere
Current density at 15mA / cm2 DC continuous drive as
Was. The initial brightness at this time is 360 cd / m 2 Met. Drive
FIG. 7 shows a change with time in luminance during movement. After driving for 333 hours
The dark spot reached 54%.
【0067】比較例3 保護層5を設けない他は実施例2と同様にして封止素子
を作製した。この素子を大気中において、定電流駆動で
電流密度を15mA/cm2 として直流連続駆動させ
た。この時の初期輝度は220cd/m2 であり、初期
の発光は不均一であった。駆動時の輝度の経時変化を図
7に示す。310時間駆動後でダークスポットは29%
に達した。Comparative Example 3 A sealing element was manufactured in the same manner as in Example 2 except that the protective layer 5 was not provided. This device was continuously driven in the atmosphere at a constant current for a current density of 15 mA / cm 2 . The initial luminance at this time was 220 cd / m 2 , and the initial light emission was non-uniform. FIG. 7 shows a change with time in luminance during driving. After driving for 310 hours, the dark spot is 29%
Reached
【0068】実施例3 発光機能を有する電子輸送層3bを化合物(E1)をホ
ストとして、以下に示すルブレン(D1)Example 3 Using the compound (E1) as a host for the electron transport layer 3b having a light emitting function, rubrene (D1) shown below was used.
【0069】[0069]
【化5】 Embedded image
【0070】をドープ色素として、2元同時蒸着により
形成した他は実施例2と同様にして封止素子を作製し
た。電子輸送層3bに含まれるルブレンの濃度は2.7
モル%であった。A sealing element was prepared in the same manner as in Example 2 except that the element was formed by the two-source simultaneous vapor deposition using the dope as a dye. The concentration of rubrene contained in the electron transport layer 3b is 2.7.
It was mol%.
【0071】この様にして得られた有機電界発光素子を
大気中において、定電流駆動で電流密度を15mA/c
m2 として直流連続駆動させた。この時の初期輝度は5
35cd/m2 であった。駆動時の輝度の経時変化を図
8に示す。380時間駆動後のダークスポットは0.1
%未満であった。図8の輝度の低下速度から輝度の半減
時間は10,000時間程度が予想され、従来の有機E
L素子と比べて飛躍的な駆動寿命が達成された。電圧の
変化は初期の7.2Vに対して、380時間後で8.0
Vと1V以下の増加に抑制された。The thus obtained organic electroluminescent device was driven in the atmosphere at a constant current to obtain a current density of 15 mA / c.
DC was continuously driven as m 2 . The initial brightness at this time is 5
It was 35 cd / m 2 . FIG. 8 shows a change with time in luminance during driving. Dark spot after driving for 380 hours is 0.1
Was less than%. The half-life of luminance is expected to be about 10,000 hours from the rate of decrease in luminance shown in FIG.
A dramatic driving life was achieved compared to the L element. The voltage change was 7.2 V at the initial stage, and it was 8.0 after 380 hours.
It was suppressed to an increase of V and 1 V or less.
【0072】実施例4 実施例3と同様にして作製した封止素子を小型環境試験
器(タバイエスペック社製SH220型)により、60
℃−90%RHの条件で24時間保存後の素子特性を測
定した。測定結果を保存前の特性とともに以下の表−1
に示す。Example 4 The sealing element produced in the same manner as in Example 3 was tested by a small environment tester (SH220 type manufactured by Tabai Espec Co., Ltd.) at 60
Element characteristics after storage for 24 hours under the condition of ° C-90% RH were measured. Table 1 below shows the measurement results together with the characteristics before storage.
Shown in
【0073】[0073]
【表2】 [Table 2]
【0074】上記の環境試験で輝度および発光効率に劣
化はなく、ダークスポットの増加もみられず、本発明に
おける封止方法が高温高湿度下でも十分信頼性を有する
ことが示された。In the above environmental test, there was no deterioration in luminance and luminous efficiency, no increase in dark spots was observed, and it was shown that the sealing method of the present invention has sufficient reliability even under high temperature and high humidity.
【0075】[0075]
【発明の効果】本発明の有機電界発光素子の封止方法に
よれば、特定の接着剤から成る封止層を有するために、
大気中での保存や駆動の際に安定した発光特性を示す封
止素子を得ることができる。従って、本発明による有機
電界発光素子はフラットパネル・ディスプレイ(例えば
OAコンピュータ用や壁掛けテレビ)や面発光体として
の特徴を生かした光源(例えば、複写機の光源、液晶デ
ィスプレイや計器類のバックライト光源)、表示板、標
識灯への応用が考えられ、その技術的価値は大きいもの
である。According to the organic electroluminescent element sealing method of the present invention, since it has a sealing layer made of a specific adhesive,
It is possible to obtain a sealing element that exhibits stable light emission characteristics during storage and driving in the atmosphere. Therefore, the organic electroluminescent device according to the present invention is a light source (for example, a light source of a copying machine, a liquid crystal display or a backlight of a meter, etc.) that makes use of the characteristics of a flat panel display (for example, for OA computers or wall-mounted televisions) or a surface light emitter. It can be applied to light sources), display boards, and marker lights, and its technical value is great.
【図1】有機電界発光素子の一例を示した模式断面図。FIG. 1 is a schematic cross-sectional view showing an example of an organic electroluminescence device.
【図2】有機電界発光素子の別の例を示した模式断面
図。FIG. 2 is a schematic cross-sectional view showing another example of the organic electroluminescence device.
【図3】有機電界発光素子の更に別の例を示した模式断
面図。FIG. 3 is a schematic cross-sectional view showing still another example of the organic electroluminescent element.
【図4】本発明における有機電界発光素子の封止方法の
一例を示した模式図。FIG. 4 is a schematic view showing an example of a method for sealing an organic electroluminescent element according to the present invention.
【図5】実施例1及び比較例1における有機電界発光素
子の大気中保存時の発光輝度(初期輝度を1とした)の
経時変化を示すグラフ。FIG. 5 is a graph showing changes over time in the emission luminance (initial luminance is 1) of the organic electroluminescent elements in Example 1 and Comparative Example 1 when stored in the atmosphere.
【図6】実施例1及び比較例1における有機電界発光素
子の大気中保存時のダークスポットの経時変化を示すグ
ラフ。FIG. 6 is a graph showing changes over time in dark spots of the organic electroluminescent elements of Example 1 and Comparative Example 1 when stored in the atmosphere.
【図7】実施例2、比較例2及び比較例3における有機
電界発光素子の大気中駆動時の発光輝度(初期輝度を1
とした)の経時変化を示すグラフ。FIG. 7 shows the emission luminance (initial luminance of 1 when the organic electroluminescent elements of Example 2, Comparative Example 2 and Comparative Example 3 were driven in the atmosphere).
Is a graph showing changes over time.
【図8】実施例3における有機電界発光素子の大気中駆
動時の発光輝度(初期輝度を1とした)の経時変化を示
すグラフ。FIG. 8 is a graph showing a change over time in the light emission luminance (initial luminance is 1) of the organic electroluminescent element in Example 3 when driven in air.
1 基板 2 陽極 3 有機発光層 4 陰極 3a 正孔輸送層 3b 電子輸送層 3a’ 正孔注入層 5 保護層 6 封止層 7 外気遮断材層 8 接着部 DESCRIPTION OF SYMBOLS 1 Substrate 2 Anode 3 Organic light emitting layer 4 Cathode 3a Hole transport layer 3b Electron transport layer 3a 'Hole injection layer 5 Protective layer 6 Sealing layer 7 Outside air blocking layer 8 Adhesive part
Claims (7)
積層され、該積層物の外表面に、内側から順に保護層、
封止層、外気遮断材層が形成されてなる有機電界発光素
子であって、前記封止層が下記(イ)、(ロ)、(ハ)
の条件を満たす樹脂を主成分とすることを特徴とする有
機電界発光素子。 (イ)JIS K 6911に規定される伸びが100
%以上。 (ロ)JIS K 6301に規定されるショアーA硬
度が20以上。 (ハ)ガラス転移点が−40℃以下で、−40〜+10
0℃の温度範囲でゴム状弾性を示す。1. An anode, an organic light emitting layer, and a cathode are laminated on a substrate, and a protective layer is formed on the outer surface of the laminate in order from the inside.
An organic electroluminescent device comprising a sealing layer and an outside air blocking material layer, wherein the sealing layer is one of the following (a), (b) and (c):
An organic electroluminescent device comprising a resin which satisfies the condition of (3) as a main component. (A) The elongation specified in JIS K 6911 is 100.
%that's all. (B) Shore A hardness specified by JIS K 6301 is 20 or more. (C) Glass transition point of -40 ° C or lower, -40 to +10
It exhibits rubber-like elasticity in the temperature range of 0 ° C.
樹脂が変性シリコーン系弾性接着剤である請求項1に記
載の有機電界発光素子。2. The organic electroluminescence device according to claim 1, wherein the resin satisfying the conditions (a), (b) and (c) is a modified silicone elastic adhesive.
塩化カルシウム、活性炭、ナイロン及びポリビニルアル
コールから選ばれる少なくとも一つの吸湿剤が含有され
ている請求項1又は2に記載の有機電界発光素子。3. The silica gel, zeolite,
The organic electroluminescent element according to claim 1 or 2, which contains at least one hygroscopic agent selected from calcium chloride, activated carbon, nylon and polyvinyl alcohol.
たは電気絶縁性高分子から成る請求項1〜3のいずれか
1つに記載の有機電界発光素子。4. The organic electroluminescent device according to claim 1, wherein the outside air blocking material layer is made of electrically insulating glass or electrically insulating polymer.
より小さい請求項1〜4のいずれか1つに記載の有機電
界発光素子。5. The organic electroluminescent device according to claim 1, wherein a film thickness of the cathode is smaller than a film thickness of the organic light emitting layer.
り、かつ、その表面粗さが10nm以下である請求項1
〜5のいずれか1つに記載の有機電界発光素子。6. The anode is indium tin oxide, and the surface roughness thereof is 10 nm or less.
5. The organic electroluminescent element according to any one of 5 to 5.
積層し、該積層物の外表面に、保護層を設けた後、下記
(イ)、(ロ)、(ハ)の条件を満たす樹脂を主成分と
する封止層を形成し、前記封止層の外側に外気遮断材層
をさらに設けることを特徴とする請求項1〜6のいずれ
か1つに記載の有機電界発光素子の製造方法。 (イ)JIS K 6911に規定される伸びが100
%以上。 (ロ)JIS K 6301に規定されるショアーA硬
度が20以上。 (ハ)ガラス転移点が−40℃以下で、−40〜+10
0℃の温度範囲でゴム状弾性を示す。7. After laminating an anode, an organic light emitting layer and a cathode on a substrate and providing a protective layer on the outer surface of the laminate, the following conditions (a), (b) and (c) are applied. The organic electroluminescent element according to claim 1, wherein a sealing layer containing a filling resin as a main component is formed, and an outside air blocking material layer is further provided outside the sealing layer. Manufacturing method. (A) The elongation specified in JIS K 6911 is 100.
%that's all. (B) Shore A hardness specified by JIS K 6301 is 20 or more. (C) Glass transition point of -40 ° C or lower, -40 to +10
It exhibits rubber-like elasticity in the temperature range of 0 ° C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4209695A JP3334408B2 (en) | 1995-03-01 | 1995-03-01 | Organic electroluminescent device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4209695A JP3334408B2 (en) | 1995-03-01 | 1995-03-01 | Organic electroluminescent device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08236271A true JPH08236271A (en) | 1996-09-13 |
JP3334408B2 JP3334408B2 (en) | 2002-10-15 |
Family
ID=12626474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4209695A Expired - Lifetime JP3334408B2 (en) | 1995-03-01 | 1995-03-01 | Organic electroluminescent device and method of manufacturing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3334408B2 (en) |
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JP2018511157A (en) * | 2015-01-29 | 2018-04-19 | モメンティブ・パフォーマンス・マテリアルズ・コリア・カンパニー・リミテッドMomentive Performance Materials Korea Co.,Ltd | Composition for organic electronic device sealing material and sealing material formed using the same |
JP2017204488A (en) * | 2017-08-23 | 2017-11-16 | 株式会社カネカ | Organic EL device |
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