JPH0823259A - Surface acoustic wave device and manufacturing method thereof - Google Patents
Surface acoustic wave device and manufacturing method thereofInfo
- Publication number
- JPH0823259A JPH0823259A JP17980194A JP17980194A JPH0823259A JP H0823259 A JPH0823259 A JP H0823259A JP 17980194 A JP17980194 A JP 17980194A JP 17980194 A JP17980194 A JP 17980194A JP H0823259 A JPH0823259 A JP H0823259A
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- surface acoustic
- holding frame
- electrode
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000011324 bead Substances 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 20
- 238000002844 melting Methods 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 12
- 238000007789 sealing Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
(57)【要約】
【目的】弾性表面波装置の小形化，コスト低減を図る。
【構成】圧電基板２上にＩＤＴとその端子電極５，５’
が設けられた弾性表面波素子１の振動機能面７を取り囲
み、端子電極５，５’が外側になるようなビーズ入り絶
縁性保持枠２０を形成し、その上から絶縁性上板２１を
載置してキュアすることにより、振動機能面７を保護し
て気密封止するように構成した。
【効果】従来のパッケージが不要になり、ウエハ状態で
多数の素子を同時に気密封止することができるため小形
で安価である。
(57) [Abstract] [Purpose] To reduce the size and cost of surface acoustic wave devices. [Structure] IDT and its terminal electrodes 5, 5'on a piezoelectric substrate 2.
A beaded insulating holding frame 20 is formed so as to surround the vibration function surface 7 of the surface acoustic wave element 1 provided with, and the terminal electrodes 5 and 5 ′ are on the outside, and the insulating upper plate 21 is mounted thereon. The vibration function surface 7 is protected and hermetically sealed by placing and curing. [Effect] Since a conventional package is not required and a large number of elements can be hermetically sealed at the same time in a wafer state, the package is small and inexpensive.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、弾性表面波装置及びそ
の製造方法に関し、特に、圧電基板上に配設されたすだ
れ状電極（ＩＤＴ；Ｉnterdigital Ｔransducer 、以下
ＩＤＴと略記する）と、該ＩＤＴにより励振される表面
波を反射する反射器、および該表面波が伝搬する伝搬路
上が、機械的に開放されかつ気密空間となっている構
造、すなわち弾性表面波が存在する振動機能面上が中空
気密構造をもつ弾性表面波装置及びその製造方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device and a method for manufacturing the same, and more particularly to a comb-shaped electrode (IDT; Interdigital Transducer, hereinafter abbreviated as IDT) disposed on a piezoelectric substrate. Is a structure in which the reflector that reflects the surface wave excited by and the propagation path along which the surface wave propagates are mechanically open and are an airtight space, that is, the vibration function surface where the surface acoustic wave exists is medium. The present invention relates to a surface acoustic wave device having an airtight structure and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】図４は従来の弾性表面波素子１の構造を
示す平面図である。図４に示す如く、一般に、弾性表面
波素子１は、圧電基板２の基板表面の所定の方向に表面
波を励起するためのＩＤＴ３及びバスバー４、端子電極
５，５’、さらに、バスバー４と端子電極５，５’を接
続する引き出し電極６，６’等が配設されて構成されて
いる。電極材料としては通常アルミニウム（Ａｌ）や金
（Ａｕ）が用いられる。図４の場合は簡単のためＩＤＴ
３のみで構成された多対ＩＤＴ型弾性表面波共振子を例
にとったが、表面波伝搬路方向に（図４ではＩＤＴ３の
上下方向）、ＩＤＴ３の前後左右（図４ではＩＤＴ３の
上下）に反射器を配した弾性表面波共振子、またはＩＤ
Ｔが２個以上の２端子対共振子、共振子を多数個用いた
共振子型フィルタ、さらには、入出力ＩＤＴとそのＩＤ
Ｔ間に表面波伝搬路をもついわゆるトランスバーサル型
フィルタ等の弾性表面波素子があり、以下に述べる問題
はこれらの共通の課題である。2. Description of the Related Art FIG. 4 is a plan view showing the structure of a conventional surface acoustic wave device 1. As shown in FIG. 4, in general, the surface acoustic wave element 1 includes an IDT 3 and a bus bar 4, terminal electrodes 5 and 5 ′ for exciting a surface wave in a predetermined direction on the substrate surface of the piezoelectric substrate 2, and a bus bar 4 as well. Leader electrodes 6, 6'connecting the terminal electrodes 5, 5 ', etc. are arranged and configured. Aluminum (Al) or gold (Au) is usually used as the electrode material. In the case of FIG. 4, for simplicity, IDT
Although the multi-pair IDT type surface acoustic wave resonator constituted only by 3 is taken as an example, in the surface wave propagation direction (vertical direction of IDT3 in FIG. 4), front and rear left and right of IDT3 (upper and lower sides of IDT3 in FIG. 4). Surface acoustic wave resonator with a reflector on the surface, or ID
Two-terminal pair resonator having two or more Ts, a resonator type filter using a large number of resonators, and an input / output IDT and its ID
There is a surface acoustic wave element such as a so-called transversal type filter having a surface wave propagation path between T, and the problems described below are common problems.
【０００３】図４において、端子電極５，５’を介して
ＩＤＴ３に高周波電圧が印加されると、圧電作用により
基板表面にＩＤＴの電極ピッチに対応した歪みが生じ
る。この歪みがいわゆる表面波である。ＩＤＴによって
励振された表面波は、ＩＤＴの左右（図４ではＩＤＴの
上下）に伝搬するが、ＩＤＴ自身が反射器となり、電極
指の対数がある程度以上多くなるとほぼ全反射され、励
振波と反射波による共振を起こし共振子が構成される。
この共振状態では、弾性表面波のエネルギーは、ほぼＩ
ＤＴ内部に閉じ込められている。エネルギーが閉じ込め
られている部分は、バスバー４と、バスバー４の内側に
あるＩＤＴ３の部分であるが、バースバー４の外側では
そのエネルギーは指数関数的に減少する。In FIG. 4, when a high frequency voltage is applied to the IDT 3 via the terminal electrodes 5 and 5 ', a piezoelectric action causes a distortion corresponding to the electrode pitch of the IDT on the substrate surface. This distortion is what is called a surface wave. The surface wave excited by the IDT propagates to the left and right of the IDT (upper and lower sides of the IDT in FIG. 4), but the IDT itself becomes a reflector and is almost totally reflected when the number of pairs of electrode fingers exceeds a certain level, and the excitation wave and the reflected wave are reflected. Resonance is generated by waves and a resonator is formed.
In this resonance state, the surface acoustic wave energy is almost I
It is confined inside the DT. The portion where the energy is confined is the bus bar 4 and the portion of the IDT 3 inside the bus bar 4, but outside the berth bar 4, the energy decreases exponentially.
【０００４】すなわち、図４において、弾性表面波素子
１が正常に機能するためには、励振された表面波及びそ
の表面波エネルギーが閉じ込められる部分の表面は弾性
的に開放（フリー）でなければならない。従って、弾性
表面波素子の封止（モールド）には、ＩＣ等で用いられ
ているようなチップ全体を樹脂で隙間なく固定するよう
な方法は用いられず、少なくとも弾性表面波素子として
正常に機能させるための機能面７、すなわち、図４のバ
スバー４及びＩＤＴ３の外側に数λ0 （λ0 ：表面波の
波長）程度の範囲の破線で囲まれた部分の表面を弾性的
に開放して中空構造にする必要がある。図４はＩＤＴ共
振子のみ設けられた素子の例であるが、ＩＤＴの両側に
反射器を有する弾性表面波共振子、及び入出力ＩＤＴ間
に伝搬路をもつトランスバーサル型フィルタの場合は、
反射器や伝搬路も前記機能面となることはいうまでもな
い。また、図４のように引き出し電極６，６’がある場
合は、バスバー４との接続部付近を除けば機能面ではな
い。以上詳細に述べたように、弾性表面波素子を正常に
機能させるためには機能面表面をを弾性的に開放しなけ
ればならないが、それと同時に電極表面が結露現象等に
より電気的に短絡されないように気密性も持たせて弾性
表面波装置を構成する必要がある。That is, in FIG. 4, in order for the surface acoustic wave device 1 to function normally, the surface of the part where the excited surface wave and the surface wave energy are confined must be elastically opened (free). I won't. Therefore, for sealing (molding) the surface acoustic wave element, a method of fixing the entire chip with resin without a gap, which is used in an IC or the like, is not used, and at least the surface acoustic wave element normally functions. The functional surface 7 for this purpose, that is, the surface of the portion surrounded by the broken line within the range of several λ 0 (λ 0 : wavelength of the surface wave) outside the bus bar 4 and the IDT 3 in FIG. 4 is elastically opened. It is necessary to have a hollow structure. FIG. 4 shows an example of an element provided with only an IDT resonator, but in the case of a surface acoustic wave resonator having reflectors on both sides of the IDT and a transversal filter having a propagation path between the input and output IDTs,
It goes without saying that the reflector and the propagation path also serve as the functional surface. Further, when the extraction electrodes 6 and 6 ′ are provided as shown in FIG. 4, they are not functional except for the vicinity of the connection portion with the bus bar 4. As described in detail above, in order for the surface acoustic wave element to function normally, the functional surface must be elastically opened, but at the same time, the electrode surface must not be electrically short-circuited due to dew condensation. It is necessary to configure the surface acoustic wave device with airtightness.
【０００５】そのため、従来から最も一般的に用いられ
ていた封止構造として、ハーメチックケースに封止した
構造がある。図５は、ハーメチックケースを用いた従来
の弾性表面波装置の構造例図であり、（ａ）はキャップ
１１を外したときの平面図、（ｂ）は縦断面図である。
弾性表面波素子１はステム１０上にダイボンディングさ
れ、リードピン１２と弾性表面波素子１の端子電極と
は、ワイヤ１３により接続されており、機能面は弾性的
に開放されている。キャップ１１とステム１０は冷間圧
接法又は抵抗溶接法等により気密封止され、内部の雰囲
気は通常Ｎ2 ガス等により置換されている。Therefore, the most commonly used conventional sealing structure is a hermetically sealed structure. FIG. 5 is a structural example view of a conventional surface acoustic wave device using a hermetic case, (a) is a plan view when the cap 11 is removed, and (b) is a longitudinal sectional view.
The surface acoustic wave element 1 is die-bonded on the stem 10, the lead pin 12 and the terminal electrode of the surface acoustic wave element 1 are connected by a wire 13, and the functional surface is elastically opened. The cap 11 and the stem 10 are hermetically sealed by a cold pressure welding method, a resistance welding method, or the like, and the internal atmosphere is usually replaced with N 2 gas or the like.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記従
来のハーメチックケースによる封止は構造は、ステム
１０とキャップ１１の封止用パッケージが必要であり、
コストアップになること、リードピン１２が直角に自
立しているため表面実装ができないこと、弾性表面波
素子１のチップ面積に比べてステム１０のベース面積が
大きく、ステム１０のベースの厚さやキャップ１１の高
さなどのために小型化がむずかしいこと等の欠点があっ
た。また、最近では、表面実装を可能にするためセラミ
ックケースが用いられているが、セラミックケースはハ
ーメチックケースよりさらに高価なことや、チップ面積
に比べベースの面積がさらに大きく、かつ、高さもベー
スの厚さが必要なため薄型化できない等の問題がある。
また、ハーメチックケースやセラミックケースを用いた
弾性表面波装置は、個別部品として取り扱うことを前提
としており、ＩＣのベアチップと同様に弾性表面波素子
を取り扱うことができなかった。すなわち従来の装置で
は、弾性表面波素子とＩＣベアチップ等を複数個実装し
てマルチチップモジュール（ＭＣＭ）を実現しようとし
た場合、モジュール全体を気密封止構造としなければな
らず、封止方法が限定されると同時にコストアップにな
る欠点があった。However, the above-mentioned conventional hermetic case sealing requires a package for sealing the stem 10 and the cap 11,
The cost increases, the surface mounting cannot be performed because the lead pins 12 are self-supporting at a right angle, the base area of the stem 10 is larger than the chip area of the surface acoustic wave element 1, and the thickness of the base of the stem 10 and the cap 11 are large. However, there are drawbacks such as difficulty in miniaturization due to the height and the like. Recently, a ceramic case is used to enable surface mounting, but the ceramic case is more expensive than the hermetic case, the base area is larger than the chip area, and the height is also higher than the base area. There is a problem that the thickness cannot be reduced because the thickness is required.
Further, the surface acoustic wave device using the hermetic case or the ceramic case is premised on being handled as an individual component, and the surface acoustic wave element cannot be handled like the bare chip of the IC. That is, in the conventional device, when a multi-chip module (MCM) is to be implemented by mounting a plurality of surface acoustic wave elements and IC bare chips, etc., the entire module must have a hermetically sealed structure. There was a drawback that the cost was increased while being limited.
【０００７】本発明の目的は、上記従来の問題点を解決
し、弾性表面波素子の機能面の気密中空構造を維持し、
かつ、パッケージ構造を改良して小形化，コスト低減を
図るとともに、ＩＣベアチップと同様な取扱いができる
弾性表面波装置及びその製造方法を提供することにあ
る。An object of the present invention is to solve the above-mentioned conventional problems and maintain an airtight hollow structure on the functional surface of a surface acoustic wave device.
Another object of the present invention is to provide a surface acoustic wave device and a method for manufacturing the same, which can improve the package structure to reduce the size and cost, and can be handled in the same manner as an IC bare chip.
【０００８】[0008]
【課題を解決するための手段】本発明の請求項１および
請求項３〜９に記載した弾性表面波装置は、本発明の第
１の実施例を示すものであり、その構成は、圧電基板上
にすだれ状電極と該すだれ状電極に連接した端子電極と
が配設された弾性表面波素子と、該弾性表面波素子の電
極面上に、前記すだれ状電極によって励振される表面波
の振動機能面を取り囲み前記端子電極が外側になるよう
な枠形をなし、該振動機能面の最大振動振幅より大きい
直径のビーズを混入して形成した厚さ一定の絶縁性保持
枠と、該保持枠の上に、該保持枠の外側寸法とほぼ等し
い大きさで該保持枠の内側中空部分を覆って気密封止す
るように載置固定された絶縁性上板とを備えたことを特
徴とするものである。The surface acoustic wave device according to claim 1 and claims 3 to 9 of the present invention represents a first embodiment of the present invention, and its constitution is a piezoelectric substrate. A surface acoustic wave element on which a interdigital electrode and a terminal electrode connected to the interdigital electrode are arranged, and vibration of a surface wave excited by the interdigital electrode on the electrode surface of the surface acoustic wave element. An insulating holding frame having a constant thickness formed by enclosing a bead having a diameter larger than the maximum vibration amplitude of the vibrating functional surface, the frame having a frame shape surrounding the functional surface and having the terminal electrode on the outer side. And an insulating upper plate that is mounted and fixed so as to cover the inner hollow portion of the holding frame and hermetically seal it so as to have a size substantially equal to the outer dimension of the holding frame. It is a thing.
【０００９】さらに、前記絶縁性保持枠は、高融点微
細ガラスビーズを混入した低融点ガラスで構成されたこ
と、高融点微細ガラスビーズを混入したエポキシ樹脂
で構成されたこと、微細セラミックビーズを混入した
低融点ガラスで構成されたこと、微細セラミックビー
ズを混入したエポキシ樹脂で構成されたことを特徴とす
るものである。また、前記絶縁性上板は、前記圧電基
板と同じ材質の基板であること、ガラス基板であるこ
と、セラミック基板であることを特徴とするものであ
る。Further, the insulating holding frame is made of low-melting glass mixed with high melting point fine glass beads, made of epoxy resin mixed with high melting point fine glass beads, and mixed with fine ceramic beads. It is characterized in that it is made of the low melting point glass described above and made of an epoxy resin mixed with fine ceramic beads. Also, the insulating upper plate is a substrate made of the same material as the piezoelectric substrate, a glass substrate, and a ceramic substrate.
【００１０】本発明の請求項２および請求項３〜９に記
載した弾性表面波装置は、本発明の第２の実施例を示す
ものであり、その構成は、圧電基板上にすだれ状電極と
該すだれ状電極に連接した端子電極とが配設された弾性
表面波素子と、該弾性表面波素子の電極面上に、前記す
だれ状電極によって励振される表面波の振動機能面を取
り囲み前記端子電極が外側になるような枠形をなし、該
振動機能面の最大振動振幅より大きい直径のビーズを混
入して形成した厚さ一定の絶縁性保持枠と、該保持枠の
上に、前記圧電基板の外側寸法と等しい大きさで、か
つ、前記端子電極に対向する部分に該端子電極にワイヤ
ボンディングするための窓穴が設けられ、該保持枠の内
側中空部分を覆って気密封止するように載置固定された
絶縁性上板とを備えたことを特徴とするものである。A surface acoustic wave device according to claims 2 and 3 to 9 of the present invention represents a second embodiment of the present invention, and its constitution is that a comb-shaped electrode is provided on a piezoelectric substrate. A surface acoustic wave element provided with a terminal electrode connected to the interdigital transducer, and an electrode surface of the surface acoustic wave element surrounding a vibration function surface of a surface acoustic wave excited by the interdigital electrode, and the terminal. An insulating holding frame having a constant thickness formed by mixing beads having a diameter larger than the maximum vibration amplitude of the vibration function surface in a frame shape such that the electrodes are on the outside, and the piezoelectric element on the holding frame. A window hole for wire bonding to the terminal electrode is provided in a portion that is equal to the outer dimension of the substrate and faces the terminal electrode, and covers the inner hollow portion of the holding frame to hermetically seal. Equipped with an insulating upper plate fixed on It is characterized in.
【００１１】さらに、前記絶縁性保持枠は、高融点微
細ガラスビーズを混入した低融点ガラスで構成されたこ
と、高融点微細ガラスビーズを混入したエポキシ樹脂
で構成されたこと、微細セラミックビーズを混入した
低融点ガラスで構成されたこと、微細セラミックビー
ズを混入したエポキシ樹脂で構成されたことを特徴とす
るものである。また、前記絶縁性上板は、前記圧電基
板と同じ材質の基板であること、ガラス基板であるこ
と、セラミック基板であることを特徴とするものであ
る。Further, the insulating holding frame is made of low-melting glass mixed with high-melting fine glass beads, made of epoxy resin mixed with high-melting fine glass beads, and mixed with fine ceramic beads. It is characterized in that it is made of the low melting point glass described above and made of an epoxy resin mixed with fine ceramic beads. Also, the insulating upper plate is a substrate made of the same material as the piezoelectric substrate, a glass substrate, and a ceramic substrate.
【００１２】本発明の請求項１０および請求項１１に記
載した弾性表面波装置の製造方法は、それぞれ本発明の
第１の実施例および第２の実施例の弾性表面波装置を製
造する方法を示すものであり、(1) まず、圧電性ウエハ
上に多数の弾性表面波素子のすだれ状電極と該すだれ状
電極に連接した端子電極とを配設し、(2) 次に、前記多
数の弾性表面波素子のそれぞれの電極面上に、前記すだ
れ状電極によって励起される表面波の振動機能面を取り
囲み前記端子電極が外側になるような枠形をなし、該振
動機能面の最大振動振幅より大きい直径のビーズを混入
した厚さ一定の絶縁性保持枠を形成し、(3) 前記すだれ
状電極と端子電極とが配設され絶縁性保持枠が形成され
た圧電性ウエハの上から、上板用ウエハを該絶縁性保持
枠を挟んで固着して重ねた状態でダイシングを行って個
々の弾性表面波素子を切り出すと同時に前記上板用ウエ
ハが前記端子電極の位置より内側に切断されるようにし
た弾性表面波装置の製造方法、または、(3)'前記すだれ
状電極と端子電極とが配設され絶縁性保持枠が形成され
た圧電性ウエハの上から、上板用ウエハを該絶縁性保持
枠を挟んで固着して重ねた状態でダイシングを行って個
々の弾性表面波装置を切り出すようにした弾性表面波装
置の製造方法である。The method of manufacturing a surface acoustic wave device according to claims 10 and 11 of the present invention is the same as the method of manufacturing a surface acoustic wave device according to the first embodiment and the second embodiment of the present invention, respectively. (1) First, a plurality of interdigital transducers of the surface acoustic wave device and terminal electrodes connected to the interdigital transducers are arranged on the piezoelectric wafer, and (2) On each electrode surface of the surface acoustic wave element, a frame shape is formed so as to surround the vibration function surface of the surface wave excited by the interdigital electrode, and the terminal electrode is on the outside, and the maximum vibration amplitude of the vibration function surface. Forming an insulating holding frame having a constant thickness mixed with beads of a larger diameter, (3) from the piezoelectric wafer on which the insulating holding frame in which the interdigital electrode and the terminal electrode are arranged is formed, Secure the upper plate wafer by sandwiching the insulating holding frame A method of manufacturing a surface acoustic wave device in which the upper plate wafer is cut inward from the position of the terminal electrode at the same time as cutting out individual surface acoustic wave elements by performing dicing in the state, or (3) '' Dicing is performed in a state where the upper plate wafer is fixed and overlapped with the insulating holding frame sandwiched between the piezoelectric wafer on which the interdigital electrode and the terminal electrode are provided and the insulating holding frame is formed. This is a method of manufacturing a surface acoustic wave device by cutting out individual surface acoustic wave devices.
【００１３】[0013]
【実施例】本発明の実施例について以下図によって詳細
に説明する。図１は本発明の第１の実施例の製造途中の
構造を示す平面図（Ａ），（Ｂ）とそれぞれのＡ−Ａ’
断面図（ａ），（ｂ）であり、図２は本発明の第１の実
施例の完成品の構造を示す平面図（Ｃ）とそのＡ−Ａ’
断面図（ｃ）である。図１（Ａ）→（Ｂ）→図２（Ｃ）
の順序で工程が進められる。図１，図２の第１の実施例
は、図４のようなＩＤＴのみ設けられた共振子の場合を
示したが、従来技術で述べたように、機能面７は、反射
器及び伝搬路を含む場合はそれに応じた機能面として対
応することはいうまでもない。図１（Ａ）は、図４と同
じ弾性表面波素子１の平面図であり、図１（ａ）はその
Ａ−Ａ’断面図である。図４と同一部分には同一符号を
用いた。図１（Ｂ）及び（ｂ）の２０は、機能面７の周
囲を囲み、かつ、外部回路への端子電極５，５’が外側
になるように弾性表面波素子１の表面上に形成した絶縁
性保持枠であり、微細ガラスビーズ、もしくは微細セラ
ミックビーズを混合させた低融点ガラス、もしくはエポ
キシ樹脂をスクリーン印刷等の技術により形成された均
一の厚みをもった保持枠である。図２（Ｃ），（ｃ）の
２１は絶縁性上板であり、保持枠２０の上面に固定さ
れ、弾性表面波素子１の機能面７に中空部分を確保して
気密封止するための蓋である。この上板２１は保持枠２
０の外周形状とほぼ同等の外形寸法をもち、圧電基板２
と同じ材質、又は熱膨張係数が圧電基板２とほぼ同等の
値を有するガラス基板又はセラミック基板であり、か
つ、端子電極５，５’が覆われない寸法にして端子電極
５，５’にワイヤボンディングできる形状である。この
ような上板２１を保持枠２０の上に載せ、低融点ガラス
もしくはエポキシ樹脂による保持枠２０を所定の条件に
てキュアさせて固定する。Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a plan view (A) and (B) showing a structure in the middle of manufacture of the first embodiment of the present invention and respective AA '.
It is sectional drawing (a), (b), FIG. 2 is a top view (C) which shows the structure of the finished product of the 1st Example of this invention, and its AA '.
It is sectional drawing (c). 1 (A) → (B) → FIG. 2 (C)
The process proceeds in the order of. The first embodiment of FIGS. 1 and 2 shows the case of the resonator provided with only the IDT as shown in FIG. 4, but as described in the prior art, the functional surface 7 includes the reflector and the propagation path. It is needless to say that the case including "is included" as a functional aspect corresponding thereto. FIG. 1 (A) is a plan view of the same surface acoustic wave element 1 as in FIG. 4, and FIG. 1 (a) is a sectional view taken along the line AA ′. The same parts as those in FIG. 4 are designated by the same reference numerals. Reference numeral 20 in FIGS. 1B and 1B surrounds the functional surface 7 and is formed on the surface of the surface acoustic wave element 1 so that the terminal electrodes 5 and 5 ′ to the external circuit are on the outside. The insulating holding frame is a holding frame having a uniform thickness formed by a technique such as screen printing of low melting glass mixed with fine glass beads or fine ceramic beads, or epoxy resin. Reference numeral 21 in FIGS. 2C and 2C is an insulating upper plate, which is fixed to the upper surface of the holding frame 20 to secure a hollow portion in the functional surface 7 of the surface acoustic wave element 1 for hermetically sealing. It is a lid. The upper plate 21 is a holding frame 2
Piezoelectric substrate 2 having an outer dimension almost equal to the outer peripheral shape of 0.
Is the same material, or a glass substrate or a ceramic substrate having a coefficient of thermal expansion substantially equal to that of the piezoelectric substrate 2, and the terminal electrodes 5 and 5'are dimensioned so as not to be covered with wires. It is a shape that can be bonded. Such an upper plate 21 is placed on the holding frame 20, and the holding frame 20 made of low melting glass or epoxy resin is cured and fixed under predetermined conditions.
【００１４】上記の絶縁性保持枠２０には、ビーズのス
ペーサが混入されているため、絶縁性上板２１と圧電基
板２の機能面７との間にビーズの直径以上の空間が確保
でき、かつ、機能面７が保持枠２０の内側になるため、
外側の空間とは完全に遮断された気密中空部が形成され
る。図２（Ｃ），（ｃ）に図示した構造は、圧電基板２
と上板２１がビーズ入り保持枠２０を挟んでビーズ径以
上の高さの気密空間をもつように形成されているが、気
密性をより確実なものとすることと歩留向上のため、保
持枠２０の低融点ガラス又はエポキシ樹脂をキュアする
時に、所定の圧力で圧電基板２と上板２１を抑えつける
治具を利用する。Since the bead spacers are mixed in the insulating holding frame 20, a space larger than the diameter of the bead can be secured between the insulating upper plate 21 and the functional surface 7 of the piezoelectric substrate 2. And since the functional surface 7 is inside the holding frame 20,
An airtight hollow portion is formed that is completely cut off from the outer space. The structure shown in FIGS. 2C and 2C is the piezoelectric substrate 2
The upper plate 21 and the upper plate 21 are formed so as to have an airtight space having a height equal to or larger than the bead diameter with the bead holding frame 20 interposed therebetween. However, in order to make the airtightness more reliable and improve the yield, the holding is performed. When the low melting point glass or epoxy resin of the frame 20 is cured, a jig for holding the piezoelectric substrate 2 and the upper plate 21 with a predetermined pressure is used.
【００１５】実際のデバイス製造に当っては、チップ１
個１個を作成するのは現実的ではない。本発明のもう１
つの特徴は、ウエハ単位で処理できることにある。すな
わち、保持枠２０のスクリーン印刷はウエハ単位で処理
し、上板２１もウエハと同寸法のものを使用し、上板２
１を押さえつける治具はウエハの位置ズレ及びそりを矯
正できるようにする。ウエハを切断する場合はダイシン
グマシンを使用するが、上板２１として圧電基板２と同
じウエハを用いる場合、ウエハ２枚が所定の間隔で貼り
合わされ、かつ、チップに切断された後の状態は、上下
の基板（チップ）サイズが異なるためダイシング時に工
夫が必要である。例えば、ダイシングブレードをチップ
形状に合わせた逆凸状にすることで対応できる。In actual device manufacturing, the chip 1 is used.
It is not realistic to create one by one. Another of the present invention
One of the features is that it can be processed on a wafer-by-wafer basis. That is, the screen printing of the holding frame 20 is performed on a wafer-by-wafer basis, and the upper plate 21 having the same size as the wafer is used.
The jig for pressing 1 can correct the positional deviation and warpage of the wafer. When a wafer is cut, a dicing machine is used, but when the same wafer as the piezoelectric substrate 2 is used as the upper plate 21, two wafers are bonded at a predetermined interval and after being cut into chips, the state is as follows. Since the upper and lower substrate (chip) sizes are different, some ingenuity is required during dicing. For example, it can be dealt with by forming the dicing blade into an inverted convex shape that matches the chip shape.
【００１６】図３は本発明の第２の実施例を示す平面図
（Ｄ）とそのＡ−Ａ’断面図（ｄ）である。この場合の
製造途中の構造は図１と同じである。第１の実施例と第
２の実施例の違いは、上板の平面寸法である。図３に示
した第２の実施例では、上板２２の平面寸法が圧電基板
２と同じであり、ダイシングブレードを特殊形状にする
ことなく、汎用のものを使用することができる。この第
２の実施例における上板２２には、ボンディング用の窓
穴２３，２３’が設けられている。ボンディング用窓穴
２３，２３’は、圧電基板２の端子電極５，５’と対応
した位置にあり、圧電基板２と上板２２を貼り合わせる
前にエッチングにより加工され、また、押さえつけ治具
は２枚の基板を貼り合わせる時に、窓穴２３，２３’と
端子電極５，５’の位置合わせが自動的に行えるような
構造である。本発明の第２の実施例の作用は、上板の構
造が違うだけで第１の実施例の作用と本質的に異なると
ころはない。FIG. 3 is a plan view (D) showing a second embodiment of the present invention and a sectional view (d) taken along the line AA '. The structure in the process of manufacturing in this case is the same as that in FIG. The difference between the first embodiment and the second embodiment is the plane size of the upper plate. In the second embodiment shown in FIG. 3, the planar size of the upper plate 22 is the same as that of the piezoelectric substrate 2, and a general dicing blade can be used without forming a special dicing blade. The upper plate 22 in the second embodiment is provided with bonding window holes 23, 23 '. The bonding window holes 23, 23 'are located at positions corresponding to the terminal electrodes 5, 5'of the piezoelectric substrate 2, are processed by etching before the piezoelectric substrate 2 and the upper plate 22 are bonded together, and the pressing jig is The structure is such that the window holes 23, 23 'and the terminal electrodes 5, 5'can be automatically aligned when the two substrates are bonded together. The operation of the second embodiment of the present invention is essentially the same as that of the first embodiment except that the structure of the upper plate is different.
【００１７】[0017]
【発明の効果】以上詳細に説明したように、本発明によ
れば、弾性表面波素子が素子として正常に機能するため
の中空部分を有し、外部に対する気密性が確保され、か
つ、従来から用いられていたパッケージを必要とせず、
ＩＣのベアチップと同様に扱えるため、マルチチップモ
ジュール化に対応できる。また、ウエハ単位で処理でき
るため量産効果が得られ、パッケージ材料費が必要なく
なるのと相まって製造コスト低減に極めて大きい効果が
ある。As described in detail above, according to the present invention, the surface acoustic wave element has the hollow portion for functioning normally as an element, the airtightness to the outside is secured, and Does not require the package used,
Since it can be handled like an IC bare chip, it can be applied to a multi-chip module. In addition, since the wafers can be processed on a wafer-by-wafer basis, a mass production effect can be obtained, and the cost of the package material is not required.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の製造途中の構造説明図である。FIG. 1 is a structural explanatory view of the present invention during manufacturing.
【図２】本発明の第１の実施例の構造を示す平面図と断
面図である。FIG. 2 is a plan view and a cross-sectional view showing the structure of the first embodiment of the present invention.
【図３】本発明の第２の実施例構造を示す平面図と断面
図である。3A and 3B are a plan view and a sectional view showing a second embodiment structure of the present invention.
【図４】弾性表面波素子の平面図である。FIG. 4 is a plan view of a surface acoustic wave device.
【図５】従来の構造例図である。FIG. 5 is an example of a conventional structure.
１ 弾性表面波素子 ２ 圧電基板 ３ ＩＤＴ ４ バスバー ５，５’ 端子電極 ６，６’ 引き出し電極 ７ 機能面 １０ ステム １１ キャップ １２ リードピン １３ ワイヤ ２０ 絶縁性保持枠 ２１ 絶縁性上板 ２２ 絶縁性上板 ２３，２３’ 窓用穴 1 Surface Acoustic Wave Element 2 Piezoelectric Substrate 3 IDT 4 Bus Bar 5, 5'Terminal Electrode 6, 6'Extractor Electrode 7 Functional Surface 10 Stem 11 Cap 12 Lead Pin 13 Wire 20 Insulating Retaining Frame 21 Insulating Upper Plate 22 Insulating Upper Plate 23,23 'Window hole
Claims (11)
電極に連接した端子電極とが配設された弾性表面波素子
と、 該弾性表面波素子の電極面上に、前記すだれ状電極によ
って励振される表面波の振動機能面を取り囲み前記端子
電極が外側になるような枠形をなし、該振動機能面の最
大振動振幅より大きい直径のビーズを混入して形成した
厚さ一定の絶縁性保持枠と、 該保持枠の上に、該保持枠の外側寸法とほぼ等しい大き
さで該保持枠の内側中空部分を覆って気密封止するよう
に載置固定された絶縁性上板とを備えた弾性表面波装
置。1. A surface acoustic wave device having a comb-shaped electrode and a terminal electrode connected to the comb-shaped electrode on a piezoelectric substrate, and the interdigital electrode formed on the electrode surface of the surface acoustic wave device. An insulating material having a constant thickness formed by enclosing a bead having a diameter larger than the maximum vibration amplitude of the vibrating functional surface in a frame shape surrounding the vibrating functional surface of the surface wave to be excited. A holding frame, and an insulating upper plate which is mounted and fixed on the holding frame so as to hermetically seal the inner hollow portion of the holding frame in a size substantially equal to the outer dimension of the holding frame. Equipped surface acoustic wave device.
寸法と等しい大きさで、かつ、前記端子電極に対向する
部分に該端子電極にワイヤボンディングするための窓穴
が設けられたことを特徴とする請求項１記載の弾性表面
波装置。2. The insulating upper plate has a size equal to the outer dimension of the piezoelectric substrate, and a window hole for wire bonding to the terminal electrode is provided in a portion facing the terminal electrode. The surface acoustic wave device according to claim 1, wherein:
ビーズを混入した低融点ガラスで構成されたことを特徴
とする請求項１，２記載の弾性表面波装置。3. The surface acoustic wave device according to claim 1, wherein the insulating holding frame is made of low-melting glass mixed with high-melting fine glass beads.
ビーズを混入したエポキシ樹脂で構成されたことを特徴
とする請求項１，２記載の弾性表面波装置。4. The surface acoustic wave device according to claim 1, wherein the insulating holding frame is made of an epoxy resin mixed with high melting point fine glass beads.
ーズを混入した低融点ガラスで構成されたことを特徴と
する請求項１，２記載の弾性表面波装置。5. The surface acoustic wave device according to claim 1, wherein the insulating holding frame is made of low-melting glass mixed with fine ceramic beads.
ーズを混入したエポキシ樹脂で構成されたことを特徴と
する請求項１，２記載の弾性表面波装置。6. The surface acoustic wave device according to claim 1, wherein the insulating holding frame is made of an epoxy resin mixed with fine ceramic beads.
材質の基板であることを特徴とする請求項１乃至６記載
の弾性表面波装置。7. The surface acoustic wave device according to claim 1, wherein the insulating upper plate is a substrate made of the same material as the piezoelectric substrate.
とを特徴とする請求項１乃至６記載の弾性表面波装置。8. The surface acoustic wave device according to claim 1, wherein the insulating upper plate is a glass substrate.
ることを特徴とする請求項１乃至６記載の弾性表面波装
置。9. The surface acoustic wave device according to claim 1, wherein the insulating upper plate is a ceramic substrate.
子のすだれ状電極と該すだれ状電極に連接した端子電極
とを配設し、 前記多数の弾性表面波素子のそれぞれの電極面上に、前
記すだれ状電極によって励振される表面波の振動機能面
を取り囲み前記端子電極が外側になるような枠形をな
し、該振動機能面の最大振動振幅より大きい直径のビー
ズを混入した厚さ一定の絶縁性保持枠を形成し、 前記すだれ状電極と端子電極とが配設され絶縁性保持枠
が形成された圧電性ウエハの上から、上板用ウエハを該
絶縁性保持枠を挟んで固着して重ねた状態でダイシング
を行って個々の弾性表面波素子を切り出すと同時に前記
上板用ウエハが前記端子電極の位置より内側に切断され
るようにした弾性表面波装置の製造方法。10. A piezoelectric wafer is provided with a plurality of interdigital electrodes of surface acoustic wave elements and terminal electrodes connected to the interdigital electrodes, and each of the surface acoustic wave elements is provided with an electrode surface on each electrode surface. , Having a frame shape surrounding the vibration function surface of the surface wave excited by the interdigital electrode and the terminal electrode being on the outside, and mixing beads having a diameter larger than the maximum vibration amplitude of the vibration function surface to a constant thickness An insulating holding frame is formed, and the upper plate wafer is fixed by sandwiching the insulating holding frame from above the piezoelectric wafer on which the interdigital electrode and the terminal electrode are arranged and the insulating holding frame is formed. A method of manufacturing a surface acoustic wave device in which dicing is performed in an overlapping state to cut out individual surface acoustic wave elements and at the same time the upper plate wafer is cut inward from the position of the terminal electrode.
子のすだれ状電極と該すだれ状電極に連接した端子電極
とを配設し、 前記多数の弾性表面波素子のそれぞれの電極面上に、前
記すだれ状電極によって励振される表面波の振動機能面
を取り囲み前記端子電極が外側になるような枠形をな
し、該振動機能面の最大振動振幅より大きい直径のビー
ズを混入した厚さ一定の絶縁性保持枠を形成し、 前記すだれ状電極と端子電極とが配設され絶縁性保持枠
が形成された圧電性ウエハの上から、上板用ウエハを該
絶縁性保持枠を挟んで固着して重ねた状態でダイシング
を行って個々の弾性表面波装置を切り出すようにした弾
性表面波装置の製造方法。11. A piezoelectric wafer is provided with a plurality of interdigital transducers of surface acoustic wave elements and terminal electrodes connected to the interdigital transducers, and the plurality of surface acoustic wave elements are provided on their respective electrode surfaces. , Having a frame shape surrounding the vibration function surface of the surface wave excited by the interdigital electrode and the terminal electrode being on the outside, and mixing beads having a diameter larger than the maximum vibration amplitude of the vibration function surface to a constant thickness An insulating holding frame is formed, and the upper plate wafer is fixed by sandwiching the insulating holding frame from above the piezoelectric wafer on which the interdigital electrode and the terminal electrode are arranged and the insulating holding frame is formed. And a method for manufacturing a surface acoustic wave device in which individual surface acoustic wave devices are cut out by performing dicing in a stacked state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17980194A JPH0823259A (en) | 1994-07-08 | 1994-07-08 | Surface acoustic wave device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17980194A JPH0823259A (en) | 1994-07-08 | 1994-07-08 | Surface acoustic wave device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0823259A true JPH0823259A (en) | 1996-01-23 |
Family
ID=16072139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17980194A Pending JPH0823259A (en) | 1994-07-08 | 1994-07-08 | Surface acoustic wave device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0823259A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0805552A2 (en) * | 1996-04-29 | 1997-11-05 | Motorola, Inc. | Acoustic wave filter package and method |
| WO2009078137A1 (en) * | 2007-12-14 | 2009-06-25 | Murata Manufacturing Co., Ltd. | Surface wave device and method of manufacturing the same |
| US9151284B2 (en) | 2011-09-06 | 2015-10-06 | Murata Manufacturing Co., Ltd. | Fluid control device |
| WO2020195741A1 (en) * | 2019-03-25 | 2020-10-01 | 京セラ株式会社 | Electronic component and method for manufacturing same |
| WO2020195740A1 (en) * | 2019-03-25 | 2020-10-01 | 京セラ株式会社 | Electronic component and method for manufacturing same |
-
1994
- 1994-07-08 JP JP17980194A patent/JPH0823259A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0805552A2 (en) * | 1996-04-29 | 1997-11-05 | Motorola, Inc. | Acoustic wave filter package and method |
| EP0805552A3 (en) * | 1996-04-29 | 1998-07-08 | Motorola, Inc. | Acoustic wave filter package and method |
| WO2009078137A1 (en) * | 2007-12-14 | 2009-06-25 | Murata Manufacturing Co., Ltd. | Surface wave device and method of manufacturing the same |
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