JPH08231270A - Piezoelectric composition - Google Patents
Piezoelectric compositionInfo
- Publication number
- JPH08231270A JPH08231270A JP7038123A JP3812395A JPH08231270A JP H08231270 A JPH08231270 A JP H08231270A JP 7038123 A JP7038123 A JP 7038123A JP 3812395 A JP3812395 A JP 3812395A JP H08231270 A JPH08231270 A JP H08231270A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric
- heat resistance
- composition
- electromechanical coupling
- mechanical quality
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 28
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 12
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 11
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 11
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 11
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 10
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 10
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 abstract description 23
- 230000008878 coupling Effects 0.000 abstract description 15
- 238000010168 coupling process Methods 0.000 abstract description 15
- 238000005859 coupling reaction Methods 0.000 abstract description 15
- 238000006467 substitution reaction Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 4
- 229910052573 porcelain Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
(57)【要約】
【目的】電気機械結合係数Kpが大きく、更に機械的品
質係数Qmが小さく、比誘電率εrが小さく、耐熱性に
優れた圧電磁器組成物を提供する。
【構成】金属元素の原子比による組成式を(Pb1-x-y
Lx My ) a (Nbb Crc Yd Ale ) f Tig Zr
1-f-g O3 (ここでLはSr,Baのうち少なくとも
一種、MはLa,Ce,Gd,Nd,Sm,Pr,Eu
のうち少なくとも一種)と表わした時、x,y,a,
b,c,d,e,f,gが0.01≦x≦0.08、
0.002≦y≦0.05、0.95≦a≦1.05、
0.46≦b≦0.60、0.11≦c≦0.42、
0.02≦d≦0.31、0.02≦e≦0.18、
0.02≦f≦0.15、0.46≦g≦0.52、b
+c+d+e=1.00を満足するものである。(57) [Summary] [Object] To provide a piezoelectric ceramic composition having a large electromechanical coupling coefficient Kp, a small mechanical quality coefficient Qm, a small relative permittivity εr, and excellent heat resistance. [Structure] The composition formula based on the atomic ratio of metal elements (Pb 1-xy
L x M y) a (Nb b Cr c Y d Al e) f Ti g Zr
1-fg O 3 (where L is at least one of Sr and Ba, M is La, Ce, Gd, Nd, Sm, Pr, Eu
At least one of the above), x, y, a,
b, c, d, e, f, g are 0.01 ≦ x ≦ 0.08,
0.002 ≦ y ≦ 0.05, 0.95 ≦ a ≦ 1.05,
0.46 ≦ b ≦ 0.60, 0.11 ≦ c ≦ 0.42,
0.02 ≦ d ≦ 0.31, 0.02 ≦ e ≦ 0.18,
0.02 ≦ f ≦ 0.15, 0.46 ≦ g ≦ 0.52, b
This satisfies + c + d + e = 1.00.
Description
【0001】[0001]
【産業上の利用分野】本発明は、例えば、セラミックフ
ィルタ,セラミックレゾネータ,超音波応用振動子,圧
電ブザー,圧電点火ユニット,超音波モータ,圧電ファ
ン,圧電センサ,圧電アクチュエータに用いられる圧電
磁器組成物に係わり、特に、アナログセルラーフォン、
デジタルセルラーフォン等の移動体通信機の第二中間周
波数フィルタに適する圧電磁器組成物に関する。The present invention relates to a piezoelectric ceramic composition used in, for example, a ceramic filter, a ceramic resonator, an ultrasonic transducer, a piezoelectric buzzer, a piezoelectric ignition unit, an ultrasonic motor, a piezoelectric fan, a piezoelectric sensor, and a piezoelectric actuator. Related to things, especially analog cellular phones,
The present invention relates to a piezoelectric ceramic composition suitable for a second intermediate frequency filter of a mobile communication device such as a digital cellular phone.
【0002】[0002]
【従来技術】従来から、圧電磁器組成物を利用した製品
としては、例えばセラミックフィルタ,セラミックレゾ
ネータ,超音波応用振動子,圧電ブザー,圧電点火ユニ
ット,超音波モータ,圧電ファン,圧電センサ,圧電ア
クチュエータ等がある。2. Description of the Related Art Conventionally, products using a piezoelectric ceramic composition include, for example, ceramic filters, ceramic resonators, ultrasonic applied vibrators, piezoelectric buzzers, piezoelectric ignition units, ultrasonic motors, piezoelectric fans, piezoelectric sensors, piezoelectric actuators. Etc.
【0003】ここで、セラミックフィルタ,セラミック
レゾネータ等の素子としては、PbZrO3 −PbTi
O3 を主成分とした磁器組成物が利用されており、これ
にNb2 O5 やMnO2 等の金属酸化物、Pb(Nb
2/3 Mg1/3 )O3 やPb(Nb2/3 Co1/3 )O3 等
の複合ペロブスカイト型酸化物を添加したり置換するこ
とにより圧電特性の向上が図られている。Here, as elements such as ceramic filters and ceramic resonators, PbZrO 3 -PbTi is used.
A porcelain composition containing O 3 as a main component is used, and a metal oxide such as Nb 2 O 5 or MnO 2 or Pb (Nb
Piezoelectric properties have been improved by adding or substituting complex perovskite type oxides such as 2/3 Mg 1/3 ) O 3 and Pb (Nb 2/3 Co 1/3 ) O 3 .
【0004】従来、電気機械結合係数Kpが大きく圧電
性に優れた圧電磁器組成物として、Pb(Nb2/3 Co
2/3 )O3 −PbZrO3 −PbTiO3 系の組成物が
知られている。Conventionally, Pb (Nb 2/3 Co) has been used as a piezoelectric ceramic composition having a large electromechanical coupling coefficient Kp and excellent piezoelectricity.
2/3) O 3 -PbZrO 3 -PbTiO 3 system composition is known.
【0005】一方、近年では、セラミックフィルタ,セ
ラミックレゾネータのような圧電部品においても、基板
等の表面に実装可能なように種々の条件に対応できるこ
とが要求されており、このような圧電部品においては、
部品を基板にリフロー半田付けする際、基板に実装され
た部品が230℃から300℃程度の高温に曝されるた
めに部品に組み込まれる圧電素子にも耐熱性が要求され
ている。On the other hand, in recent years, even piezoelectric components such as ceramic filters and ceramic resonators have been required to meet various conditions so that they can be mounted on the surface of a substrate or the like. ,
When the component is reflow-soldered on the substrate, the component mounted on the substrate is exposed to a high temperature of about 230 ° C. to 300 ° C., so that the piezoelectric element incorporated in the component is also required to have heat resistance.
【0006】また、例えば、圧電セラミックスの拡がり
振動を利用した数百キロヘルツ帯のフィルターにおいて
は、電気機械結合係数Kpが大きく、機械的品質係数Q
mが小さく、かつ保証減衰量を大きくするために、比誘
電率εrが小さく、耐熱性に優れた材料が必要になる。
特にデジタルセルラーフォンでは、隣接チャンネルの雑
音防止のために保証帯域内でのフィルターの群遅延特性
を安定化することが要求されている。Further, for example, in a filter of several hundreds of kilohertz band which utilizes the spreading vibration of piezoelectric ceramics, the electromechanical coupling coefficient Kp is large and the mechanical quality coefficient Q is large.
In order to reduce m and increase the guaranteed attenuation amount, a material having a small relative permittivity εr and excellent heat resistance is required.
Particularly in digital cellular phones, it is required to stabilize the group delay characteristics of the filter within the guaranteed band in order to prevent noise from adjacent channels.
【0007】[0007]
【発明が解決しようとする問題点】しかしながら、従来
の上記したPb(Nb2/3 Co1/3 )O3 −PbZrO
3−PbTiO3 系の磁器組成物は、耐熱性が低くリフ
ロー半田付け前後の圧電特性や共振周波数の変化が大き
く、実用上の問題となっていた。また、熱衝撃試験後の
圧電特性や共振周波数の変化も大きいため、環境変化の
激しい車両搭載用通信装置などのフィルター等に用いた
場合、素子の特性変化によって安定した送受信ができな
くなるという問題があった。However, the above-mentioned conventional Pb (Nb 2/3 Co 1/3 ) O 3 -PbZrO described above is used.
The 3- PbTiO 3 -based porcelain composition has low heat resistance and has large changes in piezoelectric characteristics and resonance frequency before and after reflow soldering, which has been a practical problem. In addition, since the piezoelectric characteristics and the resonance frequency change greatly after the thermal shock test, there is a problem that stable transmission / reception cannot be performed due to changes in the element characteristics when used in filters for vehicle-mounted communication devices, etc., where environmental changes are drastic. there were.
【0008】さらに、比誘電率εrが1800程度と高
いために、部分電極を形成して素子を形成する必要があ
り、また、機械的品質係数Qmが大きいために群遅延特
性が悪いという問題点があった。Further, since the relative permittivity εr is as high as about 1800, it is necessary to form a partial electrode to form an element, and the mechanical delay coefficient Qm is large, so that the group delay characteristic is poor. was there.
【0009】本発明の圧電磁器組成物は、電気機械結合
係数Kpが大きく、更に機械的品質係数Qmが小さく、
比誘電率εrが小さく、耐熱性に優れた圧電磁器組成物
を提供することを目的とする。The piezoelectric ceramic composition of the present invention has a large electromechanical coupling coefficient Kp and a small mechanical quality coefficient Qm,
An object of the present invention is to provide a piezoelectric ceramic composition having a small relative permittivity εr and excellent heat resistance.
【0010】[0010]
【問題点を解決するための手段】本発明者等は、Pb、
Zr、Ti、Nb、Cr、Y、Al、およびLa,C
e,Gd,Nd,Sm,Pr,Euのうち少なくとも一
種、並びにSr,Baのうち少なくとも一種を含む複合
ペロブスカイト型化合物であって、一定の組成を有する
ものは、電気機械結合係数Kpが大きく、機械的品質係
数Qmが小さく、比誘電率εrが小さく、耐熱性および
耐熱衝撃性に優れた圧電磁器組成物を得ることができる
ことを知見し、本発明に至った。即ち、本発明の圧電磁
器組成物は、金属成分としてPb、Zr、Ti、Nb、
Cr、Y、AlおよびLa,Ce,Gd,Nd,Sm,
Pr,Euのうち少なくとも一種、並びにSr,Baの
うち少なくとも一種を含むペロブスカイト型化合物であ
って、これらの金属元素の原子比による組成式を (Pb1-x-y Lx My ) a (Nbb Crc Yd Ale )
f Tig Zr1-f-g O3 (ここで、LはSr,Baのうち少なくとも一種、Mは
La,Ce,Gd,Nd,Sm,Pr,Euのうち少な
くとも一種)と表わした時、x,y,a,b,c,d,
e,f,gが0.01≦x≦0.08、0.002≦y
≦0.05、0.95≦a≦1.05、0.46≦b≦
0.60、0.11≦c≦0.42、0.02≦d≦
0.31、0.02≦e≦0.18、0.02≦f≦
0.15、0.46≦g≦0.52、b+c+d+e=
1.00を満足するものである。The inventors of the present invention have proposed that Pb,
Zr, Ti, Nb, Cr, Y, Al, and La, C
A complex perovskite type compound containing at least one of e, Gd, Nd, Sm, Pr and Eu, and at least one of Sr and Ba and having a constant composition has a large electromechanical coupling coefficient Kp, The inventors have found that it is possible to obtain a piezoelectric ceramic composition having a small mechanical quality factor Qm, a small relative permittivity εr, and excellent heat resistance and thermal shock resistance, and arrived at the present invention. That is, the piezoelectric ceramic composition of the present invention contains Pb, Zr, Ti, Nb as metal components,
Cr, Y, Al and La, Ce, Gd, Nd, Sm,
Pr, at least one of Eu, and Sr, at least one a perovskite compound including a composition formula by the atomic ratio of these metal elements (Pb 1-xy L x M y) of the Ba a (Nb b Cr c Y d Al e )
f Ti g Zr 1-fg O 3 (where L is at least one of Sr and Ba and M is at least one of La, Ce, Gd, Nd, Sm, Pr and Eu), x, y, a, b, c, d,
e, f, g are 0.01 ≦ x ≦ 0.08, 0.002 ≦ y
≦ 0.05, 0.95 ≦ a ≦ 1.05, 0.46 ≦ b ≦
0.60, 0.11 ≦ c ≦ 0.42, 0.02 ≦ d ≦
0.31, 0.02 ≦ e ≦ 0.18, 0.02 ≦ f ≦
0.15, 0.46 ≦ g ≦ 0.52, b + c + d + e =
It satisfies 1.00.
【0011】ここで、a,b,c,d,e,f,gを上
記の範囲に設定した理由について説明する。Aサイトの
aを0.95≦a≦1.05としたのは、aが0.95
未満の場合や1.05よりも大きい場合には電気機械結
合係数Kpが低下し耐熱性が低下するからである。Aサ
イトのaは0.99≦a≦1.01であることが特に望
ましい。Here, the reason why a, b, c, d, e, f, g are set in the above range will be described. The reason for setting a of the A site to 0.95 ≦ a ≦ 1.05 is that a is 0.95.
This is because if it is less than 1.05 or more than 1.05, the electromechanical coupling coefficient Kp is lowered and the heat resistance is lowered. It is particularly desirable that a of the A site is 0.99 ≦ a ≦ 1.01.
【0012】また、Nb量のbを0.46≦b≦0.6
0としたのは、bが0.46未満では機械的品質係数Q
mが大きくなり、bが0.60よりも大きい場合には比
誘電率εrが大きくなり耐熱性が低下するからである。
Nb量のbは0.52≦b≦0.58とすることが望ま
しい。Further, b of the Nb amount is 0.46≤b≤0.6
The reason for setting 0 is that when b is less than 0.46, the mechanical quality factor Q
This is because when m is large and b is larger than 0.60, the relative dielectric constant εr is large and the heat resistance is lowered.
It is desirable that the Nb amount b be 0.52 ≦ b ≦ 0.58.
【0013】さらに、Cr量のcを0.11≦c≦0.
42としたのは、cが0.11未満の場合には耐熱性が
低下し、0.42よりも大きい場合には機械的品質係数
Qmが大きくなり群遅延時間特性が低下するからであ
る。Cr量のcは0.22≦c≦0.26であることが
望ましい。Further, the Cr content c is 0.11≤c≤0.
The reason for setting 42 is that when c is less than 0.11, heat resistance decreases, and when it is greater than 0.42, the mechanical quality factor Qm increases and the group delay time characteristic decreases. It is desirable that the Cr content c be 0.22 ≦ c ≦ 0.26.
【0014】Y量のdを0.02≦d≦0.31とした
のは、dが0.02未満では機械的品質係数Qmが大き
く増加し、0.31よりも大きいと比誘電率εrが高く
なり耐熱性が劣化するからである。Y量のdは0.02
≦d≦0.17とすることが望ましい。The d of Y amount is set to 0.02 ≦ d ≦ 0.31 because the mechanical quality factor Qm is greatly increased when d is less than 0.02, and the relative dielectric constant εr is greater than 0.31. Is high and heat resistance is deteriorated. D of Y amount is 0.02
It is desirable that ≦ d ≦ 0.17.
【0015】Al量のeを0.02≦e≦0.18とし
たのは、eが0.02未満では比誘電率εrが大きくな
り、0.18よりも大きいと機械的品質係数Qmが大き
くなり過ぎるからである。Al量のeは0.02≦e≦
0.12とすることが望ましい。The amount e of Al is set to 0.02≤e≤0.18 because the relative permittivity εr increases when e is less than 0.02 and the mechanical quality factor Qm increases when e is more than 0.18. Because it becomes too big. The Al amount e is 0.02 ≦ e ≦
It is desirable to set it to 0.12.
【0016】(Nbb Crc Yd Ale ) のBサイトへ
の置換量fを0.02≦f≦0.15としたのは、fが
0.02未満では電気機械結合係数Kpが低下し、また
0.15よりも大きいと比誘電率εrが大きくなり、ま
た耐熱性が急激に低下するからである。(Nbb Crc
Yd Ale ) のBサイトへの置換量fは0.05≦f≦
0.07とすることが望ましい。The substitution amount f of (Nb b Cr c Y d Al e ) at the B site is set to 0.02 ≦ f ≦ 0.15 because the electromechanical coupling coefficient Kp decreases when f is less than 0.02. On the other hand, if it is larger than 0.15, the relative permittivity εr becomes large and the heat resistance sharply decreases. (Nb b Cr c
The substitution amount f of B d site of Y d Al e ) is 0.05 ≦ f ≦
It is desirable to set it to 0.07.
【0017】TiのZrへの置換量gを0.46≦g≦
0.52としたのは、gが0.46未満の場合は比誘電
率εrが大きく、耐熱性が低下し、0.52よりも大き
い場合には電気機械結合係数Kpが低くなり過ぎるため
である。TiのZrへの置換量gは0.48≦g≦0.
51であることが望ましい。The substitution amount g of Ti by Zr is 0.46 ≦ g ≦
The reason for setting 0.52 is that when g is less than 0.46, the relative permittivity εr is large and the heat resistance is lowered, and when it is larger than 0.52, the electromechanical coupling coefficient Kp is too low. is there. The substitution amount g of Ti by Zr is 0.48 ≦ g ≦ 0.
It is preferably 51.
【0018】L(Srおよび/ またはBa)の置換量x
を0.01≦x≦0.08としたのは、xが0.01未
満の場合は電気機械結合係数Kpが小さく、0.08よ
りも大きい場合には比誘電率εrが大きくなるためであ
る。Srおよび/ またはBaの置換量xは0.01≦x
≦0.015であることが望ましい。本発明では特にS
rで置換することが望ましい。Substitution amount x of L (Sr and / or Ba) x
Is set to 0.01 ≦ x ≦ 0.08 because the electromechanical coupling coefficient Kp is small when x is less than 0.01 and the relative dielectric constant εr is large when x is greater than 0.08. is there. Substitution amount x of Sr and / or Ba is 0.01 ≦ x
It is desirable that ≦ 0.015. In the present invention, especially S
Substitution with r is desirable.
【0019】M(La,Ce,Gd,Nd,Sm,P
r,Euのうち少なくとも一種)の置換量yを0.00
2≦y≦0.05としたのは、yが0.002未満の場
合は電気機械結合係数Kpが小さくなり、0.05より
も大きい場合には比誘電率εrが高く、耐熱性が低下す
るためである。Mの置換量yは0.003≦y≦0.0
05であることが望ましい。M (La, Ce, Gd, Nd, Sm, P
The substitution amount y of at least one of r and Eu) is 0.00
2 ≦ y ≦ 0.05 is set so that when y is less than 0.002, the electromechanical coupling coefficient Kp becomes small, and when y is larger than 0.05, the relative dielectric constant εr is high and the heat resistance is deteriorated. This is because The substitution amount y of M is 0.003 ≦ y ≦ 0.0
A value of 05 is desirable.
【0020】本発明の圧電磁器組成物としては、金属元
素の原子比による組成式を(Pb1- x-y Lx My ) a
(Nbb Crc Yd Ale ) f Tig Zr1-f-g O3
(ここで、LはSr,Baのうち少なくとも一種、Mは
La,Gd,Nd,Sm,Prのうち少なくとも一種)
と表わした時、x,y,a,b,c,d,e,f,gが
0.01≦x≦0.015、0.003≦y≦0.00
5、0.99≦a≦1.01、0.52≦b≦0.5
8、0.22≦c≦0.26、0.02≦d≦0.1
7、0.02≦e≦0.12、0.05≦f≦0.0
7、0.48≦g≦0.51を満足することが望まし
い。The piezoelectric ceramic composition of the present invention has a composition formula (Pb 1- xy L x M y ) a based on the atomic ratio of metal elements.
(Nb b Cr c Y d Al e ) f Ti g Zr 1-fg O 3
(Here, L is at least one of Sr and Ba, and M is at least one of La, Gd, Nd, Sm, and Pr)
, X, y, a, b, c, d, e, f, g are 0.01 ≦ x ≦ 0.015, 0.003 ≦ y ≦ 0.00
5, 0.99 ≦ a ≦ 1.01, 0.52 ≦ b ≦ 0.5
8, 0.22 ≦ c ≦ 0.26, 0.02 ≦ d ≦ 0.1
7, 0.02 ≦ e ≦ 0.12, 0.05 ≦ f ≦ 0.0
7, 0.48 ≦ g ≦ 0.51 is preferably satisfied.
【0021】そして、本発明の圧電磁器は、例えば、原
料としてPbO、ZrO2 、TiO2 、Nb2 O5 、C
r2 O3 、Y2 O3 、Al2 O3 およびLa,Ce,G
d,Nd,Sm,Pr,Euのうち少なくとも一種の酸
化物、並びにSrCO3 および/またはBaCO3 の各
原料粉末を所定量秤量し、ボールミル等で10〜24時
間湿式混合し、次いで、この混合物を脱水、乾燥した
後、800〜1000℃で1〜3時間仮焼し、当該仮焼
物を再びボールミル等で粉砕する。The piezoelectric ceramic of the present invention can be manufactured, for example, by using PbO, ZrO 2 , TiO 2 , Nb 2 O 5 and C as raw materials.
r 2 O 3 , Y 2 O 3 , Al 2 O 3 and La, Ce, G
At least one oxide of d, Nd, Sm, Pr, and Eu, and each raw material powder of SrCO 3 and / or BaCO 3 are weighed in a predetermined amount and wet-mixed with a ball mill for 10 to 24 hours, and then this mixture is mixed. Is dehydrated and dried, and then calcined at 800 to 1000 ° C. for 1 to 3 hours, and the calcined product is pulverized again by a ball mill or the like.
【0022】その後、この粉砕物に有機バインダーを混
合し、造粒後、所定圧力で成形して成形体を作製し、こ
れらを大気中において1200〜1350℃で0.5〜
4時間焼成することにより得られる。Then, an organic binder is mixed with the crushed product, and after granulation, the product is molded at a predetermined pressure to prepare a molded product, which is 0.5 to 0.5 at 1200 to 1350 ° C. in the atmosphere.
It is obtained by firing for 4 hours.
【0023】[0023]
【作用】本発明の圧電磁器組成物では、PbZrO3 −
PbTiO3 系の磁器組成物のZrおよびTiの一部を
Nb,Cr、Y,Alで置換し、Pbの一部をSrおよ
び/またはBaやLa,Ce,Gd,Nd,Sm,P
r,Euのうち少なくとも一種で置換することにより、
高い電気機械結合係数Kp、低い機械的品質係数Qm、
低い比誘電率εrを示すとともに、耐熱性を向上するこ
とが可能となる。In the piezoelectric ceramic composition of the present invention, PbZrO 3
Part of Zr and Ti of the PbTiO 3 -based porcelain composition is replaced with Nb, Cr, Y, and Al, and part of Pb is Sr and / or Ba, La, Ce, Gd, Nd, Sm, P.
By substituting at least one of r and Eu,
High electromechanical coupling factor Kp, low mechanical quality factor Qm,
It is possible to exhibit a low relative permittivity εr and improve heat resistance.
【0024】[0024]
【実施例】以下、本発明を次の実施例で説明する。原料
粉末としてPbO、ZrO2 、TiO2 、Nb2 O5 、
Cr2 O3 、Y2O3 、Al2 O3 、SrCO3 および
/またはBaCO3 、La,Ce,Gd,Nd,Sm,
Pr,Euのうち少なくとも一種の酸化物の各原料粉末
を、表1〜表3に示すような組成となるように所定量秤
量し、ボールミルで12時間以上湿式混合し、次いで、
この混合物を脱水、乾燥した後、950℃で3時間仮焼
し、当該仮焼物を再びボールミルで粉砕した。The present invention will be described in the following examples. As raw material powder, PbO, ZrO 2 , TiO 2 , Nb 2 O 5 ,
Cr 2 O 3 , Y 2 O 3 , Al 2 O 3 , SrCO 3 and / or BaCO 3 , La, Ce, Gd, Nd, Sm,
A predetermined amount of each raw material powder of at least one oxide of Pr and Eu was weighed so as to have a composition shown in Tables 1 to 3, wet-mixed with a ball mill for 12 hours or more, and then,
After this mixture was dehydrated and dried, it was calcined at 950 ° C. for 3 hours, and the calcined product was pulverized again with a ball mill.
【0025】[0025]
【表1】 [Table 1]
【0026】[0026]
【表2】 [Table 2]
【0027】[0027]
【表3】 [Table 3]
【0028】その後、この粉砕物に有機バインダー(P
VA)を混合し、造粒した。得られた粉末を1.5乃至
2t/cm2 の圧力で直径23mm、厚さ2mmの寸法
からなる円板形状にプレス成形した。さらに、これらの
成形体をMgO等からなる容器内に密閉し、大気中13
00乃至1350℃で2時間の条件で焼成した。Then, an organic binder (P
VA) was mixed and granulated. The obtained powder was press-molded at a pressure of 1.5 to 2 t / cm 2 into a disk shape having a diameter of 23 mm and a thickness of 2 mm. Further, these molded bodies were sealed in a container made of MgO or the like and placed in the atmosphere.
Baking was performed at 00 to 1350 ° C. for 2 hours.
【0029】得られた焼結体を研磨して厚み0.5mm
の円板を形成した。この円板の両主面にAgペーストを
600℃で焼付けることにより電極を形成し、80℃の
シリコンオイル中で3kv/mmの直流電圧を30分間
印加して分極処理した後、電気機械結合係数Kp,機械
的品質係数Qm、耐熱性を評価した。また、比誘電率ε
rをインピーダンスメータで求められた容量から計算し
て求めた。電気機械結合係数Kp、機械的品質係数Qm
はインピーダンスメータで測定した共振周波数と反共振
周波数の値から計算により求めた。耐熱性は、250℃
をピークとする半田リフロー炉を3回連続して通過させ
る試験を行った際の、試験前の共振周波数fr1 と試験
後の共振周波数fr2 の値から、 fra =|(fr2 −fr1 )|/fr1 ×100 の式を用いて算出した変化率fra で評価した。これら
の結果を表4〜表6に示す。The obtained sintered body is polished to have a thickness of 0.5 mm.
Disk was formed. Electrodes were formed by baking Ag paste on both principal surfaces of this disc at 600 ° C., and a DC voltage of 3 kv / mm was applied for 30 minutes in silicon oil at 80 ° C. for polarization treatment, followed by electromechanical coupling. The coefficient Kp, the mechanical quality coefficient Qm, and the heat resistance were evaluated. Also, the relative permittivity ε
r was calculated and calculated from the capacity obtained by the impedance meter. Electromechanical coupling coefficient Kp, mechanical quality coefficient Qm
Was calculated from the values of the resonance frequency and anti-resonance frequency measured by an impedance meter. Heat resistance is 250 ° C
From the values of the resonance frequency fr 1 before the test and the resonance frequency fr 2 after the test when the test is performed in which the solder reflow furnace having the peak of 3 times is continuously passed, fra = | (fr 2 −fr 1 ) | / Fr 1 × 100 The rate of change fra calculated using the equation was evaluated. The results are shown in Tables 4 to 6.
【0030】[0030]
【表4】 [Table 4]
【0031】[0031]
【表5】 [Table 5]
【0032】[0032]
【表6】 [Table 6]
【0033】尚、表1〜表3における試料No.55はM
としてGdを用い、試料No.56はMとしてSmを用
い、試料No.57はMとしてPrを用い、試料No.58
はMとしてNdを用い、試料No.34はMとしてLaを
0.003と、Ceを0.002とを用い、試料No.3
5はMとしてEuを用いた。その他の試料ではMとして
Laを用いた。The samples No. 55 in Tables 1 to 3 are M
Gd is used as the sample, Sm is used as the M in the sample No. 56, Pr is used as the M in the sample No. 57, and the sample No. 58 is used.
Uses Nd as M, Sample No. 34 uses La as 0.003 and Ce as 0.002 as M, and has Sample No. 3
5 used Eu as M. In other samples, La was used as M.
【0034】また、試料No.70はLとしてBaを用
い、試料No.33はLとしてBaを0.007、Srを
0.008用い、他はLとしてSrを用いた。In Sample No. 70, Ba was used as L. In Sample No. 33, Ba was 0.007 and Sr was 0.008 as L, and Sr was used as L for the others.
【0035】これらの表4〜表6から、本発明の圧電磁
器組成物は電気機械結合係数Kpが40%以上と大き
く、機械的品質係数Qmが200以下と低く、比誘電率
は1500以下と低く、また、耐熱試験によるfra の
変化が±0.1%以下と小さいことが判る。From these Tables 4 to 6, the piezoelectric ceramic composition of the present invention has a large electromechanical coupling coefficient Kp of 40% or more, a low mechanical quality factor Qm of 200 or less, and a relative dielectric constant of 1500 or less. It can be seen that it is low, and the change in fra due to the heat resistance test is as small as ± 0.1% or less.
【0036】[0036]
【発明の効果】以上詳述した通り、本発明によれば、P
bZrO3 −PbTiO3 系の磁器組成物のZrおよび
Tiの一部をNb,Cr、Y,Alで置換し、Pbの一
部をSrおよび/またはBaやLa,Ce,Gd,N
d,Sm,Pr,Euのうち少なくとも一種で置換する
ことにより、高い電気機械結合係数Kp、低い機械的品
質係数Qm、低い比誘電率εrを示すとともに、耐熱性
を向上することができ、表面実装用圧電部品などの素子
として有効に用いられる圧電磁器組成物を得ることがで
きる。As described in detail above, according to the present invention, P
Part of Zr and Ti of the bZrO 3 —PbTiO 3 system porcelain composition is replaced with Nb, Cr, Y, and Al, and part of Pb is Sr and / or Ba or La, Ce, Gd, N.
By substituting at least one of d, Sm, Pr, and Eu, a high electromechanical coupling coefficient Kp, a low mechanical quality coefficient Qm, a low relative dielectric constant εr, and heat resistance can be improved. It is possible to obtain a piezoelectric ceramic composition that is effectively used as an element such as a mounting piezoelectric component.
Claims (1)
Cr、Y、AlおよびLa,Ce,Gd,Nd,Sm,
Pr,Euのうち少なくとも一種、並びにSr,Baの
うち少なくとも一種を含むペロブスカイト型化合物であ
って、これらの金属元素の原子比による組成式を (Pb1-x-y Lx My ) a (Nbb Crc Yd Ale )
f Tig Zr1-f-g O3 (ここで、LはSr,Baのうち少なくとも一種、Mは
La,Ce,Gd,Nd,Sm,Pr,Euのうち少な
くとも一種)と表わした時、x,y,a,b,c,d,
e,f,gが 0.01 ≦x≦0.08 0.002≦y≦0.05 0.95 ≦a≦1.05 0.46 ≦b≦0.60 0.11 ≦c≦0.42 0.02 ≦d≦0.31 0.02 ≦e≦0.18 0.02 ≦f≦0.15 0.46 ≦g≦0.52 b+c+d+e=1.00 を満足することを特徴とする圧電磁器組成物。1. A metal component of Pb, Zr, Ti, Nb,
Cr, Y, Al and La, Ce, Gd, Nd, Sm,
Pr, at least one of Eu, and Sr, at least one a perovskite compound including a composition formula by the atomic ratio of these metal elements (Pb 1-xy L x M y) of the Ba a (Nb b Cr c Y d Al e )
f Ti g Zr 1-fg O 3 (where L is at least one of Sr and Ba and M is at least one of La, Ce, Gd, Nd, Sm, Pr and Eu), x, y, a, b, c, d,
e, f and g are 0.01 ≤ x ≤ 0.08 0.002 ≤ y ≤ 0.05 0.95 ≤ a ≤ 1.05 0.46 ≤ b ≤ 0.60 0.11 ≤ c ≤ 0. 42 0.02 ≤ d ≤ 0.31 0.02 ≤ e ≤ 0.18 0.02 ≤ f ≤ 0.15 0.46 ≤ g ≤ 0.52 b + c + d + e = 1.00 Piezoelectric composition.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7038123A JPH08231270A (en) | 1995-02-27 | 1995-02-27 | Piezoelectric composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7038123A JPH08231270A (en) | 1995-02-27 | 1995-02-27 | Piezoelectric composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08231270A true JPH08231270A (en) | 1996-09-10 |
Family
ID=12516685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7038123A Pending JPH08231270A (en) | 1995-02-27 | 1995-02-27 | Piezoelectric composition |
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Country | Link |
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JP (1) | JPH08231270A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6123867A (en) * | 1997-12-03 | 2000-09-26 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric ceramic composition and piezoelectric device using the same |
KR20040051732A (en) * | 2002-12-11 | 2004-06-19 | 주식회사 광성전자 | Dielectric ceramic composition |
-
1995
- 1995-02-27 JP JP7038123A patent/JPH08231270A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6123867A (en) * | 1997-12-03 | 2000-09-26 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric ceramic composition and piezoelectric device using the same |
KR20040051732A (en) * | 2002-12-11 | 2004-06-19 | 주식회사 광성전자 | Dielectric ceramic composition |
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