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JPH08195373A - Cleaning device and its method - Google Patents

Cleaning device and its method

Info

Publication number
JPH08195373A
JPH08195373A JP7019824A JP1982495A JPH08195373A JP H08195373 A JPH08195373 A JP H08195373A JP 7019824 A JP7019824 A JP 7019824A JP 1982495 A JP1982495 A JP 1982495A JP H08195373 A JPH08195373 A JP H08195373A
Authority
JP
Japan
Prior art keywords
wafer
cleaning
liquid
tank
holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7019824A
Other languages
Japanese (ja)
Inventor
Naoki Shindo
尚樹 新藤
Shigenori Kitahara
重徳 北原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron Kyushu Ltd filed Critical Tokyo Electron Ltd
Priority to JP7019824A priority Critical patent/JPH08195373A/en
Priority to US08/583,979 priority patent/US5730162A/en
Priority to KR1019960000944A priority patent/KR100239942B1/en
Priority to TW085114511A priority patent/TW349232B/en
Priority to TW085114510A priority patent/TW349231B/en
Priority to TW085100348A priority patent/TW348264B/en
Priority to TW085114509A priority patent/TW348265B/en
Publication of JPH08195373A publication Critical patent/JPH08195373A/en
Priority to US08/976,262 priority patent/US5817185A/en
Pending legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: To enable a treating tank not only to be lessened in size but also to be enhanced in cleaning efficiency. CONSTITUTION: A wafer holder 3 which holds 50 wafers W at a pitch half the arrangement pitch is a cassette C is used, and the wafers W containable in two cassettes C are transferred onto the wafer holder 3 by the cooperation of a pushing member 52 and a wafer chuck 6 and dipped into a treating tank. The wafers W are cleaned with circulating cleaning solution first in the treating tank, then cleaning solution is stopped from circulating, and rinsing liquid is supplied through the base of the treating tank to replace cleaning solution and to rinse the works W. Cleaning and rinsing are carried out in the same treating tank, and the wafer holder 3 is narrow in wafer arrangement pitch, so that a treating tank can be lessened in size, and a cleaning device of this constitution is also lessened in size as a whole.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、被処理基板を洗浄する
洗浄装置及びその方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus and method for cleaning a substrate to be processed.

【0002】[0002]

【従来の技術】半導体デバイスの製造工程では、半導体
ウエハ(以下「ウエハ」という)表面のパーティクル、
有機汚染物、金属不純物等のコンタミネーションを除去
するために洗浄装置が使用されており、その中でもウエ
ット洗浄装置は、前記コンタミネーションを効果的に除
去でき、しかもバッチ処理が可能でスループットが良好
であるため幅広く普及している。
2. Description of the Related Art In the process of manufacturing semiconductor devices, particles on the surface of a semiconductor wafer (hereinafter referred to as "wafer"),
Cleaning equipment is used to remove contaminants such as organic contaminants and metallic impurities. Among them, the wet cleaning equipment can effectively remove the contamination, and batch processing is also possible with good throughput. Therefore, it is widely used.

【0003】この種の洗浄装置では、薬液槽内にてウエ
ハに対してアンモニア、フッ酸、塩酸などの薬液処理を
行った後、リンス槽内にて例えば純水によりリンスを行
っており、その装置構成については、薬液槽及びリンス
槽の組が各薬液毎にシリーズに配列され、例えば50枚
のウエハを一括して各槽に順次搬送するための搬送系が
設けられている。図10は従来の洗浄装置の主要部を示
す図であり、この洗浄装置では、ウエハチャック11に
より例えば50枚のウエハWを一括して両側から把持
し、先ず薬液槽1A内のウエハボート12に移し替えて
薬液に浸漬し、薬液を循環させながら洗浄処理例えばエ
ッチングし、次いでウエハチャック11によりウエハボ
ート12上のウエハWを把持して、リンス槽1B内のウ
エハボート13に移し替えて浸漬し、例えば純水をリン
ス槽1Bの底部から供給しながらリンスを行う。
In this type of cleaning apparatus, a wafer is subjected to a chemical treatment with ammonia, hydrofluoric acid, hydrochloric acid or the like in a chemical bath, and then rinsed in the rinse bath with, for example, pure water. With respect to the apparatus configuration, a set of a chemical solution tank and a rinse tank is arranged in series for each chemical solution, and a transfer system for sequentially transferring, for example, 50 wafers collectively to each tank is provided. FIG. 10 is a diagram showing a main part of a conventional cleaning apparatus. In this cleaning apparatus, for example, 50 wafers W are collectively held from both sides by a wafer chuck 11, and firstly, a wafer boat 12 in a chemical tank 1A is held. The wafer W is transferred and immersed in a chemical solution, and a cleaning process such as etching is performed while circulating the chemical solution. Then, the wafer W on the wafer boat 12 is held by the wafer chuck 11, transferred to the wafer boat 13 in the rinse tank 1B and immersed. For example, rinsing is performed while supplying pure water from the bottom of the rinse tank 1B.

【0004】[0004]

【発明が解決しようとしている課題】ところでウエハ
は、洗浄装置への搬入時には、樹脂製の容器であるウエ
ハカセットに通常25枚並べられて収納されており、5
0枚一括処理の場合にはウエハチャック11により2カ
セット分のウエハが把持される。ここでウエハカセット
は汎用性を高めるために統一されたピッチ例えば8イン
チ径ウエハでは6.35mm、6インチ径ウエハでは
4.76mmでウエハを保持するように構成されてお
り、ウエハチャック11により把持されたウエハ列の前
後の長さはウエハの厚さ分に、前記ピッチの合計分を加
えた寸法となる。従って各槽の前後の寸法(ウエハの配
列方向の寸法)が長くなり、しかも各槽におけるウエハ
の両側には、ウエハチャックが出入りできるスペースが
必要なので左右の寸法も長くなり、薬液槽及びリンス槽
共に大きい槽が必要になる。
By the way, when the wafers are carried into the cleaning apparatus, usually 25 wafers are arranged and stored in a wafer cassette, which is a container made of resin.
In the case of batch processing of 0 wafers, the wafer chuck 11 holds wafers for two cassettes. Here, the wafer cassette is configured to hold the wafer at a uniform pitch, for example, 6.35 mm for an 8-inch diameter wafer and 4.76 mm for a 6-inch diameter wafer in order to enhance versatility, and is held by the wafer chuck 11. The front and rear lengths of the formed wafer row are the sum of the thickness of the wafer and the total pitch. Therefore, the front and rear dimensions (dimensions in the wafer arrangement direction) of each tank are long, and since the space in which the wafer chuck can move in and out is required on both sides of the wafer in each tank, the left and right dimensions are also long, and the chemical solution tank and the rinse tank are long. Both require a large tank.

【0005】またこのようにウエハチャックを用いてウ
エハをウエハボートに移載して洗浄処理を行ういわゆる
キャリアレス方式では、ウエハの移し替えの度毎にウエ
ハチャックによりウエハの把持、解放動作を行うため、
ウエハとチャックとの接触によりパーティクル汚染を引
き起こすおそれが大きいし、ウエハチャック(ウエハ搬
送部)を高精度に作らなければならないのでコストアッ
プになる。なおウエハカセットにウエハを収納したまま
洗浄する方法もあるが、この場合にもウエハカセットの
投入スペースを確保するために各槽が大きくなってしま
う。一方この種の洗浄装置は、通常複数種類の薬液によ
り洗浄処理を行うために既述のようにこれら薬液槽及び
リンス槽の組を複数シリーズに配列する構成であること
から装置全体が大型化しコストアップになる。
Further, in the so-called carrierless system in which the wafer chuck is used to transfer the wafer to the wafer boat and the cleaning process is performed, the wafer chuck grips and releases the wafer every time the wafer is transferred. For,
There is a high possibility that particle contamination will occur due to contact between the wafer and the chuck, and the wafer chuck (wafer transfer unit) must be made with high accuracy, resulting in an increase in cost. There is also a method of cleaning the wafer while the wafer is stored in the wafer cassette, but in this case as well, each tank becomes large in order to secure a space for loading the wafer cassette. On the other hand, this type of cleaning device usually has a configuration in which a set of the chemical solution tank and the rinse tank is arranged in a plurality of series in order to perform the cleaning process with a plurality of kinds of chemical solutions, so that the size of the entire apparatus is increased and the cost is increased. It will be up.

【0006】本発明は、このような事情のもとになされ
たものであり、その目的は、装置の小型化を図ることが
できる洗浄装置を提供することにある。
The present invention has been made under these circumstances, and an object thereof is to provide a cleaning device which can be downsized.

【0007】[0007]

【課題を解決するための手段】請求項1の発明は、複数
の被処理基板を収納する収納容器から被処理基板を取り
出して洗浄する洗浄装置において、前記収納容器におけ
る被処理基板の配列ピッチよりも狭いピッチで被処理基
板を並列に保持するように保持溝が形成された保持具
と、前記収納容器から被処理基板を取り出して前記保持
具に移し替える移載手段と、前記被処理基板を洗浄処理
液で洗浄し、次いでリンス液でリンスするための処理槽
と、この処理槽内に洗浄処理液を供給するための洗浄処
理液供給部と、前記処理槽内にリンス液を供給するため
のリンス液供給部と、前記被処理基板が保持された保持
具を前記処理槽内の洗浄処理液に浸漬する搬送部と、を
備え、前記被処理基板を洗浄処理液により洗浄処理した
後、前記リンス液供給部からリンス液を処理槽内に導入
してリンス液で洗浄処理液を置換することを特徴とす
る。
According to a first aspect of the present invention, there is provided a cleaning apparatus for taking out and cleaning a substrate to be processed from a container for storing a plurality of substrates to be processed, wherein A holder in which a holding groove is formed so as to hold the substrates to be processed in parallel at a narrow pitch, a transfer means for taking out the substrates to be processed from the storage container and transferring them to the holder, and the substrate to be processed. A treatment tank for cleaning with the cleaning treatment liquid and then a rinse treatment liquid, a cleaning treatment liquid supply unit for supplying the cleaning treatment liquid into the treatment bath, and a rinse liquid for supplying into the treatment bath. A rinse liquid supply unit, and a carrier unit for immersing the holder holding the substrate to be processed in the cleaning treatment liquid in the processing tank, after cleaning the substrate to be treated with the cleaning treatment liquid, Use of the rinse liquid By introducing rinse liquid into the processing tank from the parts, characterized in that to replace the cleaning liquid with the rinse liquid.

【0008】請求項2の発明は、請求項1の発明におい
て、保持具の保持溝のピッチは、2mm以上であること
を特徴とする。
The invention of claim 2 is characterized in that, in the invention of claim 1, the pitch of the holding grooves of the holder is 2 mm or more.

【0009】請求項3の発明は、複数の被処理基板を収
納する収納容器から被処理基板を取り出して、前記収納
容器における被処理基板の配列ピッチよりも狭いピッチ
で保持具に移し替える工程と、前記処理槽内に洗浄処理
液を供給する工程と、前記被処理基板が保持された保持
具を前記処理槽内の洗浄処理液に浸漬して被処理基板を
洗浄処理する工程と、前記被処理基板の洗浄処理後に、
前記処理槽内にリンス液を供給してリンス液で洗浄処理
液を置換し、被処理基板をリンスする工程と、を備えた
ことを特徴とする。
According to a third aspect of the present invention, the substrate to be processed is taken out from a container for storing a plurality of substrates to be processed, and is transferred to a holder at a pitch narrower than the arrangement pitch of the substrates to be processed in the container. A step of supplying a cleaning treatment liquid into the treatment tank; a step of immersing the holder holding the substrate to be treated in the cleaning treatment liquid in the treatment tank to perform a cleaning treatment on the substrate to be treated; After cleaning the processed substrate,
A step of supplying a rinse liquid into the processing bath, replacing the cleaning liquid with the rinse liquid, and rinsing the substrate to be processed.

【0010】[0010]

【作用】移載手段により収納容器から被処理体を取り出
し保持具に移し替える。この保持具では、被処理体は収
納容器における被処理体の配列ピッチよりも狭い例えば
半分のピッチで保持される。被処理体は保持具に保持さ
れたまま、処理槽内の洗浄処理液に浸漬され、洗浄処理
後にリンス液を処理槽内に供給してリンス液により処理
槽内を置換し、被処理体をリンスする。
The object to be processed is taken out from the storage container by the transfer means and transferred to the holder. In this holder, the object to be processed is held at a pitch that is narrower than the arrangement pitch of the objects to be processed in the storage container, for example, half the pitch. The object to be treated is immersed in the cleaning treatment liquid in the treatment tank while being held by the holder, and after the cleaning treatment, the rinse liquid is supplied into the treatment tank to replace the inside of the treatment tank with the rinse liquid to remove the object to be treated. Rinse.

【0011】このように処理槽内の被処理体の配列ピッ
チが小さいので処理槽が小さくて済み、しかも洗浄処理
とリンスとを共通の処理槽で行うため、配列ピッチを小
さくしても(その理由については後述するが)パーティ
クル汚染のおそれがなく、装置全体の小型化を図れる。
Since the arrangement pitch of the objects to be treated in the treatment tank is small as described above, the treatment tank can be small, and since the cleaning treatment and the rinsing are performed in the same treatment tank, even if the arrangement pitch is small ( Although the reason will be described later), there is no risk of particle contamination, and the overall size of the device can be reduced.

【0012】[0012]

【実施例】本発明の実施例に係る洗浄装置の主要部を述
べる前に、搬送系なども含めた装置全体について図1を
参照しながら簡単に説明すると、装置全体は、洗浄処理
前の被処理基板例えばウエハをカセット単位で収容する
搬入部Aと、ウエハの洗浄処理が行われる洗浄処理部B
と、洗浄処理後のウエハをカセット単位で取り出すため
の搬出部Cとの3つのゾーンによって構成されている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Before describing the main parts of a cleaning apparatus according to an embodiment of the present invention, the entire apparatus including a transport system will be briefly described with reference to FIG. A carry-in section A for accommodating processed substrates such as wafers in cassette units, and a cleaning processing section B for cleaning the wafers.
And a carry-out section C for taking out the wafer after cleaning processing in cassette units.

【0013】搬入部Aでは、例えば25枚のウエハが収
納されたカセットCが外部からカセット搬送手段20に
より待機部21に一旦搬入された後、ローダ部22に搬
送され、ここで図では見えないウエハチャックによりカ
セットC内のウエハが専用のウエハ保持具に移し替えら
れる。洗浄処理部Bでは、搬入部Aと搬出部Cとを結ぶ
ラインに沿って例えば3台のウエハ搬送機構R1〜R3
が設けられ、ウエハ搬送機構R1〜R3は、ウエハを保
持したウエハ保持具を装置内に搬送する保持具搬送手段
を備えている。また前記搬入部A側から順に、ウエハ搬
送機構R1の保持具搬送手段23を洗浄、乾燥する洗浄
・乾燥槽T1、3つの処理槽T2〜T4、ウエハ搬送機
構手段R3の保持具搬送手段24を洗浄、乾燥する洗浄
・乾燥槽T5、ウエハを蒸気乾燥させるウエハ乾燥槽T
6が設けられている。
In the carry-in section A, a cassette C containing, for example, 25 wafers is once carried into the standby section 21 from the outside by the cassette carrying means 20 and then carried to the loader section 22, which is not visible in the figure. The wafer chuck transfers the wafers in the cassette C to a dedicated wafer holder. In the cleaning processing section B, for example, three wafer transfer mechanisms R1 to R3 are provided along a line connecting the carry-in section A and the carry-out section C.
The wafer transfer mechanisms R1 to R3 are provided with a holder transfer means for transferring a wafer holder holding a wafer into the apparatus. Further, in order from the loading section A side, a cleaning / drying tank T1 for cleaning and drying the holder transporting means 23 of the wafer transporting mechanism R1, three processing tanks T2 to T4, and a holder transporting means 24 of the wafer transporting mechanism R3 are provided. Cleaning / drying tank T5 for cleaning and drying, and wafer drying tank T for steam-drying wafers
6 is provided.

【0014】処理槽T2〜T4は、洗浄処理液により洗
浄され、かつ夫々例えば純水でリンスされるように構成
され、ウエハは例えば50枚一括して後述の専用の保持
具で保持されてウエハ搬送機構R1〜R3により、順次
処理槽T2〜T4内にて洗浄処理が行われる。洗浄処理
部Bの上方には、前記ウエハチャックによってウエハが
取り出された後の空のカセットCを洗浄、乾燥するため
の洗浄・乾燥ライン25が設けられており、この洗浄乾
燥ラインへのカセットCの供給は、前記ローダ部22及
び昇降機構26によって行われる。
The processing tanks T2 to T4 are constructed so as to be cleaned with a cleaning processing solution and rinsed with, for example, pure water. For example, 50 wafers are collectively held by a dedicated holder described later, and the wafers are held. A cleaning process is sequentially performed in the processing tanks T2 to T4 by the transport mechanisms R1 to R3. A cleaning / drying line 25 for cleaning and drying the empty cassette C after the wafer is taken out by the wafer chuck is provided above the cleaning processing section B. The cassette C to the cleaning / drying line is provided. Is supplied by the loader unit 22 and the elevating mechanism 26.

【0015】ここで上述の専用のウエハ保持具及び装置
の概観を図2に示すと、ウエハ保持具3は、保持具本体
30に、ウエハWの下端を保持する保持棒31、とウエ
ハWの下部両側を保持する保持棒32、33とを設けて
なり、これら保持棒31〜33には、前記ウエハカセッ
トCにおけるウエハWの配列ピッチよりも狭い、例えば
半分の配列ピッチ(8インチウエハの場合6.35mm
×1/2=3.175mm)でウエハWを保持するため
の保持溝34が例えば50本形成されている。
2 shows an overview of the above-mentioned dedicated wafer holder and apparatus, the wafer holder 3 includes a holder body 30 for holding the lower end of the wafer W, and a wafer W. Holding bars 32 and 33 for holding both lower sides are provided, and these holding bars 31 to 33 are narrower than the arrangement pitch of the wafers W in the wafer cassette C, for example, a half arrangement pitch (in the case of an 8-inch wafer, 6.35 mm
For example, 50 holding grooves 34 for holding the wafer W are formed with (× 1/2 = 3.175 mm).

【0016】前記保持具搬送手段は、図2及び図3に符
号61で示すように例えばウエハ保持具3の上部にて前
後に夫々水平に折曲された被支持部30a,30bの下
面を夫々支持する一対のアーム61a,61bよりな
り、後述の移動台35と処理槽4内との間で(図1の例
でいえば、見えない移動台と処理槽T4と見えない受け
渡し台との間で)ウエハ保持具3を搬送する役割を果た
す。
As shown by the reference numeral 61 in FIGS. 2 and 3, the holder transporting means is provided, for example, on the lower surfaces of the supported portions 30a, 30b which are horizontally bent forward and backward at the upper part of the wafer holder 3, respectively. It is composed of a pair of supporting arms 61a and 61b, and is between a later-described moving table 35 and the inside of the processing tank 4 (in the example of FIG. 1, between the invisible moving table and the processing tank T4 and the invisible transfer table). At) it plays a role of transporting the wafer holder 3.

【0017】前記3つの処理槽T2〜T4は、同一の構
造であってもよく、各処理槽3(T2〜T4)及びそれ
に関連する装置構成の例について図2〜図5を参照しな
がら詳述する。処理槽4は、例えば矩形状に成形される
と共に上縁部に越流用の三角形状の切欠部41が形成さ
れており、処理槽3の上縁部の外側には越流した液を受
容する受容槽42が設けられている。
The three processing tanks T2 to T4 may have the same structure, and an example of each processing tank 3 (T2 to T4) and the apparatus configuration related thereto will be described in detail with reference to FIGS. 2 to 5. I will describe. The processing tank 4 is formed, for example, in a rectangular shape, and a triangular notch 41 for overflow is formed at the upper edge portion, and the overflowed liquid is received outside the upper edge portion of the processing tank 3. A receiving tank 42 is provided.

【0018】前記ローダ部22には、図3に示すように
ウエハカセットCの載置台51の下方側に、ウエハの突
き上げ部材52が配置されており、この突き上げ部材5
2は、1カセット分のウエハ例えば25枚のウエハを保
持する保持溝53を備えると共に、昇降部54により上
昇してカセットCの下方側から(載置台51には突き上
げ部材52の通過空間が形成されている)25枚のウエ
ハWを一括して突き上げて保持するように構成されてい
る。
As shown in FIG. 3, a wafer push-up member 52 is arranged in the loader section 22 below the mounting table 51 of the wafer cassette C.
2 includes a holding groove 53 for holding one cassette of wafers, for example, 25 wafers, and is raised by an elevating unit 54 from the lower side of the cassette C (a mounting table 51 has a passage space for a push-up member 52 formed therein). 25 wafers W) are collectively pushed up and held.

【0019】カセットCから前記ウエハ保持具3にウエ
ハを移し替えるウエハチャック6(図1のウエハチャッ
クを符号「6」として代表して示す)は、図3に示すよ
うに、左右に開閉しウエハの周縁を把持するように構成
されており、前記突き上げ部材52によりウエハカセッ
トC内から突き上げられた25枚のウエハWをカセット
C内のウエハWの配列ピッチPと同ピッチPで一括して
把持し、前記ウエハ保持具3内に移し替える。このとき
ウエハ保持具3の保持溝34のピッチは例えば1/2ピ
ッチ(P/2)であるため、ウエハWは保持溝34に一
つおきに保持されることとなる。
A wafer chuck 6 for transferring a wafer from the cassette C to the wafer holder 3 (the wafer chuck in FIG. 1 is represented by reference numeral "6") is opened / closed to the left and right as shown in FIG. 25 wafers W pushed up from inside the wafer cassette C by the push-up member 52 are collectively held at the same pitch P as the arrangement pitch P of the wafers W in the cassette C. Then, it is transferred into the wafer holder 3. At this time, since the pitch of the holding grooves 34 of the wafer holder 3 is, for example, ½ pitch (P / 2), the wafers W are held in the holding grooves 34 every other one.

【0020】一方ウエハ保持具3は前後(図3の矢印方
向)に移動自在な移動台35の上に載置され、この移動
台35は、前記ウエハWの配列ピッチPの半分(半ピッ
チP/2)の量だけ正確に移動するように構成されてお
り、25枚のウエハW(1カセット分のウエハ)がウエ
ハチャック6から移し替えられた後、半ピッチP/2だ
け例えば前方側に移動することとなる。従ってウエハチ
ャック6に把持された次の25枚のウエハWは、ウエハ
保持具3内に既に保持されている25枚のウエハWの間
に入り込み、1つおきに空きになっている保持溝34に
保持されることになる。なおウエハチャック6における
隣同士のチャック部分62、62の間には空間63が形
成されているため、先のウエハWとは干渉することはな
い。この例では、ピッチPで配列されたカセットC内の
ウエハWを取り出して、半ピッチP/2で保持するウエ
ハ保持具3に移し替えるための移載手段は、突き上げ部
材52、ウエハチャック6及び移動台35などにより構
成される。ただしウエハチャック6からウエハ保持具3
に50枚移し替えるためには、ウエハ保持具3側を移動
させる代りにウエハチャック6側を移動させてもよい。
On the other hand, the wafer holder 3 is placed on a movable table 35 which is movable back and forth (in the direction of the arrow in FIG. 3), and this movable table 35 is half the arrangement pitch P of the wafers W (half pitch P). / 2) is accurately moved, and after 25 wafers W (one cassette worth of wafers) have been transferred from the wafer chuck 6, a half pitch P / 2 is applied to the front side, for example. It will be moved. Therefore, the next 25 wafers W held by the wafer chuck 6 enter between the 25 wafers W already held in the wafer holder 3 and the holding grooves 34 are vacant every other wafer. Will be held in. Since the space 63 is formed between the adjacent chuck portions 62, 62 of the wafer chuck 6, it does not interfere with the previous wafer W. In this example, the transfer means for taking out the wafers W in the cassettes C arranged at the pitch P and transferring the wafers W to the wafer holder 3 that holds the wafers at the half pitch P / 2 are the push-up member 52, the wafer chuck 6, and the wafer chuck 6. It is composed of a moving table 35 and the like. However, from the wafer chuck 6 to the wafer holder 3
In order to transfer 50 wafers, the wafer chuck 6 side may be moved instead of the wafer holder 3 side.

【0021】前記処理槽4の底部には、リンス液例えば
純水を供給するためのリンス液供給管43が接続される
と共に、処理槽4の底部とウエハ保持具3との間には整
流手段7が設けられている。リンス液供給管43は洗浄
処理液の循環路44の一部を兼用しており、バルブV1
を介して図示しない純水供給源に接続されている。前記
循環路44は、受容槽42の底部と処理槽4の底部との
間に設けられ、バルブV2、ポンプP、フィルタF及び
バルブV3が介設されている。また前記受容槽42に
は、リンス処理時に純水を排出し、バルブV4を備えた
排出管45が接続されている。
A rinsing liquid supply pipe 43 for supplying a rinsing liquid such as pure water is connected to the bottom of the processing bath 4, and a rectifying means is provided between the bottom of the processing bath 4 and the wafer holder 3. 7 is provided. The rinse liquid supply pipe 43 also serves as a part of the circulation passage 44 for the cleaning treatment liquid, and the valve V1
Is connected to a pure water supply source (not shown). The circulation path 44 is provided between the bottom of the receiving tank 42 and the bottom of the processing tank 4, and has a valve V2, a pump P, a filter F, and a valve V3 interposed therebetween. Further, the receiving tank 42 is connected to a discharge pipe 45 which discharges pure water at the time of rinsing and is equipped with a valve V4.

【0022】前記整流手段7は、例えばリンス液供給管
43の供給口に対向して設けられた例えば供給口と略同
径の拡散板71と、この拡散板71の上方位置にて図示
しない支脚などにより支持され、処理槽4の底面に沿っ
て設けられた整流板72とから構成されており、整流板
72は、例えば図5に示すようにウエハ保持具3の保持
棒31〜33よりも若干長い板状体に、前後に平行に伸
びるスリット73、及び前後に配列された孔部74を形
成して構成される。また前記処理槽4の上部には、ウエ
ハチャック6と干渉しない位置に洗浄処理液供給部8が
設けられている。
The rectifying means 7 is, for example, a diffusion plate 71 provided facing the supply port of the rinse liquid supply pipe 43 and having a diameter substantially the same as that of the supply port, and a supporting leg (not shown) above the diffusion plate 71. And a rectifying plate 72 provided along the bottom surface of the processing tank 4, and the rectifying plate 72 is more than the holding rods 31 to 33 of the wafer holder 3 as shown in FIG. 5, for example. A slightly long plate-like body is formed with slits 73 extending in parallel in the front-rear direction and hole portions 74 arranged in the front-rear direction. Further, a cleaning processing liquid supply unit 8 is provided above the processing tank 4 at a position where it does not interfere with the wafer chuck 6.

【0023】次に上述実施例の作用について述べる。先
ず例えば図1に示すローダ部22において、図6(a)
に示すようにカセットCの下方から突き上げ部材52が
上昇し、カセットC内の25枚のウエハWを一括して突
き上げる。そして既に詳述した如く図6(b)に示すよ
うにウエハチャック6がこれらウエハWを把持してウエ
ハ保持具3に受け渡し、次のカセットC内の25枚のウ
エハWも同様にして、ただしウエハ保持具3を半ピッチ
P/2だけウエハWの配列方向にずらしておいてウエハ
チャック6からウエハ保持具3に受け渡す。こうしてウ
エハ保持具3には、50枚のウエハWがカセットCにお
けるウエハWの配列ピッチPの半分のピッチP/2で保
持される。
Next, the operation of the above embodiment will be described. First, for example, in the loader unit 22 shown in FIG.
As shown in FIG. 5, the push-up member 52 is raised from below the cassette C, and the 25 wafers W in the cassette C are pushed up collectively. Then, as already described in detail, as shown in FIG. 6B, the wafer chuck 6 holds these wafers W and transfers them to the wafer holder 3, and the 25 wafers W in the next cassette C are similarly processed, The wafer holder 3 is shifted by a half pitch P / 2 in the arrangement direction of the wafers W and transferred from the wafer chuck 6 to the wafer holder 3. Thus, the wafer holder 3 holds 50 wafers W at a pitch P / 2 which is half the arrangement pitch P of the wafers W in the cassette C.

【0024】一方洗浄処理液供給部8から洗浄処理液例
えばフッ酸溶液を処理槽3内に供給しておき、バルブV
2、V3を開いてポンプPにより洗浄処理液を循環して
おく。そして前記ウエハ搬送機構の保持具搬送手段61
により前記ウエハ保持具3を処理槽3内に搬送して、図
6(c)に示すように例えば50枚のウエハWを洗浄処
理液内に浸漬し、前記フッ酸溶液によりウエハW表面の
酸化膜をエッチングする。次いで洗浄処理液の循環を止
め、図6(d)に示すようにリンス液供給管43より処
理槽4の底部から純水を供給する。リンス液供給口から
供給された純水は、先ず拡散板71により拡散され、整
流板72により整流されてウエハWの下方側から上昇
し、この結果洗浄処理液が追い出されて処理槽4内が純
水に置き換わる。その後純水をリンス液供給管43より
比抵抗が回復するまでリンスを続けてリンス処理を終了
する。
On the other hand, a cleaning treatment liquid, such as a hydrofluoric acid solution, is supplied from the cleaning treatment liquid supply unit 8 into the treatment tank 3, and the valve V is used.
2, V3 is opened and the cleaning treatment liquid is circulated by the pump P. Then, the holder transfer means 61 of the wafer transfer mechanism
The wafer holder 3 is transferred into the processing bath 3 by means of the above, and as shown in FIG. 6C, for example, 50 wafers W are immersed in the cleaning processing liquid, and the surface of the wafer W is oxidized by the hydrofluoric acid solution. Etch the film. Then, the circulation of the cleaning treatment liquid is stopped, and pure water is supplied from the bottom of the treatment tank 4 through the rinse liquid supply pipe 43 as shown in FIG. The pure water supplied from the rinse liquid supply port is first diffused by the diffusion plate 71, rectified by the rectification plate 72 and rises from the lower side of the wafer W, and as a result, the cleaning treatment liquid is expelled and the inside of the treatment tank 4 is emptied. Replaced by pure water. Thereafter, the pure water is continuously rinsed from the rinse liquid supply pipe 43 until the specific resistance is recovered, and the rinse treatment is completed.

【0025】上述実施例によれば、洗浄処理とリンスと
を共通の処理槽で行ういわば1バス方式であるため、装
置を小型化でき、特に複数の薬液で洗浄処理を行う場合
に、洗浄処理槽とリンス槽とを1組としていた従来装置
に比べ大幅に小型化できる。そしてウエハカセットCに
おける配列ピッチよりも狭いピッチ例えば半分のピッチ
でウエハ保持具3にウエハWを並べて保持し、このウエ
ハ保持具3によりウエハWを処理槽3内に浸漬するよう
にしているため、処理槽3がウエハカセットCの配列ピ
ッチから決まるサイズよりも小さくなる。
According to the above-described embodiment, since the cleaning process and the rinsing are performed in a common processing tank in a so-called 1-bath system, the apparatus can be downsized, and especially when the cleaning process is performed with a plurality of chemicals. The size can be greatly reduced compared to the conventional device in which the tank and the rinse tank are combined into one set. The wafers W are held side by side on the wafer holder 3 at a pitch smaller than the arrangement pitch in the wafer cassette C, for example, a half pitch, and the wafers W are immersed in the processing bath 3 by the wafer holder 3. The size of the processing tank 3 becomes smaller than the size determined by the arrangement pitch of the wafer cassettes C.

【0026】ここでウエハ保持具3の配列ピッチを狭く
するという構成は、1バス方式において採用することに
意義がある。即ち本発明者は、洗浄処理槽とリンス槽と
を用いた従来装置では、ウエハWのピッチを狭めると一
連の洗浄処理を終了した後にパーティクルの付着量が多
いが、1バス方式の場合にはパーティクルの付着の問題
はないことを見い出しており、この差は洗浄処理液が疎
水性の場合例えばフッ酸系溶液のときに顕著であること
を把握している。その理由については明らかではない
が、ウエハWを洗浄処理液からリンス液に移し替えると
きに、ウエハWの配列ピッチが狭いとウエハWの裏面側
のパーティクルが、対向するウエハWの表面に付着する
ものと考えられる。
Here, the configuration in which the arrangement pitch of the wafer holders 3 is narrowed is significant to be adopted in the 1-bus system. That is, the present inventor has found that in the conventional apparatus using the cleaning processing tank and the rinse tank, when the pitch of the wafer W is narrowed, a large amount of particles adhere after the completion of a series of cleaning processing. It has been found that there is no problem of particle adhesion, and it is understood that this difference is remarkable when the cleaning treatment liquid is hydrophobic, for example, when the cleaning treatment liquid is a hydrofluoric acid-based solution. Although the reason for this is not clear, when the wafer W is transferred from the cleaning processing liquid to the rinse liquid, if the arrangement pitch of the wafers W is narrow, particles on the back surface side of the wafer W adhere to the front surface of the opposing wafer W. It is considered to be a thing.

【0027】また専用のウエハ保持具3にウエハWを保
持して処理槽内に浸漬しているので、カセットC内にウ
エハWを収納したまま洗浄処理液に浸漬するか、あるい
はウエハチャックでウエハWを把持して処理槽3内のウ
エハボートに移し替える場合に比べてカセットCの投入
スペース分あるいはウエハチャックの出入りスペース
分、処理槽3を小さくできる。更にウエハチャックによ
りウエハを順次各処理槽へ搬送する場合に比べてパーテ
ィクル汚染のおそれが小さい。更にまたウエハ保持具3
自体も、保持溝34のピッチを狭くすることにより小さ
くなるので、保持具搬送手段は小型化され、そしてウエ
ハを把持しないので高精度に作らなくて済み、従って安
価にできる。
Further, since the wafer W is held by the dedicated wafer holder 3 and immersed in the processing bath, the wafer W is immersed in the cleaning treatment liquid while being stored in the cassette C, or the wafer is chucked by the wafer chuck. Compared with the case where W is gripped and transferred to the wafer boat in the processing tank 3, the processing tank 3 can be made smaller by the space for loading the cassette C or the space for loading and unloading the wafer chuck. Furthermore, the risk of particle contamination is less than in the case where wafers are sequentially transferred to each processing tank by a wafer chuck. Furthermore, the wafer holder 3
Since the holder itself is also reduced by narrowing the pitch of the holding grooves 34, the holder transfer means is downsized, and since the wafer is not gripped, it does not have to be manufactured with high precision, and thus the cost can be reduced.

【0028】このように処理槽3を小型化できることに
より、装置の小型化及びコストダウンを図ることができ
ると共に、洗浄処理液及び純水の消費量を低減でき、洗
浄処理液から純水への置換に要する時間が短くなるので
リンス効率が高くなる。この結果リンス時間を短縮でき
るためスループットが向上し、タクトタイム(一のウエ
ハが処理された後次のウエハが処理されるまでの時間)
を短縮化できる。
Since the processing tank 3 can be downsized in this way, the apparatus can be downsized and the cost can be reduced, and the consumption of the cleaning processing liquid and pure water can be reduced, and the cleaning processing liquid can be converted into pure water. Since the time required for replacement is short, the rinse efficiency is high. As a result, the rinse time can be shortened to improve the throughput, and the tact time (the time from the processing of one wafer to the processing of the next wafer)
Can be shortened.

【0029】以上においてウエハ保持具3における保持
溝34のピッチつまりウエハの配列ピッチは、カセット
Cのウエハの配列ピッチPの半分に限らず、半ピッチP
/2より大きくても小さくてもよいが、あまり小さくす
ると表面張力によりウエハ同士が引きつけられて接触し
てしまうおそれがあるので、2mm以上であることが好
ましい。
In the above, the pitch of the holding grooves 34 in the wafer holder 3, that is, the wafer arrangement pitch is not limited to half of the wafer arrangement pitch P of the cassette C, but a half pitch P.
It may be larger or smaller than / 2, but if it is too small, the wafers may be attracted to each other due to the surface tension and contact with each other.

【0030】またカセットCからウエハ保持具3にウエ
ハを移し替える手段としては、先の実施例のものに限ら
ず、例えばウエハチャックのウエハ把持溝を下方側まで
長くしかつある位置からは下方に向かうにつれてウエハ
把持溝が接近するように(把持溝の配列を側面からみた
ときに把持溝の群が下に向うにつれて窄むように)構成
し、カセット内のウエハを把持するときはカセット内の
ピッチでウエハが並び、ウエハチャックをカセットに対
して上昇させたときにウエハが把持溝に沿って降下し、
所定位置で止まって狭いピッチの状態で(把持溝の下部
側はピッチが狭くなっている)ウエハチャックに把持さ
れるようにしてピッチの変換を行ってもよい。
Further, the means for transferring the wafer from the cassette C to the wafer holder 3 is not limited to that of the previous embodiment, and for example, the wafer gripping groove of the wafer chuck is extended to the lower side and is moved downward from a certain position. The wafer gripping grooves are configured to approach each other as they go toward each other (when the gripping groove array is viewed from the side, the gripping groove group is narrowed as it goes down). When gripping the wafer in the cassette, the pitch in the cassette is set. The wafers are lined up, and when the wafer chuck is raised with respect to the cassette, the wafers descend along the gripping grooves,
The pitch conversion may be performed so that the wafer chuck is stopped at a predetermined position and is held by a wafer chuck in a narrow pitch state (the pitch of the lower side of the gripping groove is narrow).

【0031】更にピッチの変換を行なうためには、保持
溝を形成する保持溝形成部材を例えば50個独立に用意
してこれらがウエハの配列方向に移動可能で保持溝の間
隔が変わるように構成した中間保持機構を用意し、ウエ
ハチャックによりカセット内のウエハを取り出して前記
中間保持機構に一旦保持させて、保持溝形成部材を移動
してピッチを狭くし、次いでピッチの狭い別のウエハチ
ャックにより中間保持機構上のウエハを把持してウエハ
保持具に移し替えるようにしてもよい。
To further change the pitch, for example, 50 holding groove forming members for forming the holding grooves are independently prepared, and these members are movable in the wafer arranging direction so that the distance between the holding grooves is changed. Prepared intermediate holding mechanism, the wafer in the cassette is taken out by the wafer chuck and once held by the intermediate holding mechanism, the holding groove forming member is moved to narrow the pitch, and then another wafer chuck having a narrow pitch is used. The wafer on the intermediate holding mechanism may be gripped and transferred to the wafer holder.

【0032】ここで洗浄処理液を処理槽4内に供給する
にあたっては、工場側の洗浄処理液供給システムから処
理槽4までの間に、洗浄処理液を希薄化できる機能を持
たせることが好ましい。例えば通常フッ酸溶液は、工場
側の供給システムから1:99(50%フッ酸:純水)
といった決まった濃度で処理槽4まで供給されており、
この場合ウエハWの酸化膜は1分間で約30オングスト
ロームエッチングされる。
Here, when the cleaning treatment liquid is supplied into the treatment tank 4, it is preferable that the cleaning treatment liquid is diluted between the factory-side cleaning treatment liquid supply system and the treatment tank 4. . For example, the normal hydrofluoric acid solution is 1:99 (50% hydrofluoric acid: pure water) from the supply system on the factory side.
Is supplied to the processing tank 4 at a fixed concentration such as
In this case, the oxide film on the wafer W is etched by about 30 Å in 1 minute.

【0033】ところで1バス方式の場合には、洗浄処理
液が満たされている処理槽4内に純水を供給して置換し
リンスを行うため、純水流量を例えば1分間50リット
ル程度に大きくしても、純水で全部置換されるまでには
ある程度の時間を要し、このため処理槽4内のリンス液
の流れ方や処理のシーケンスなどに工夫を凝らさない
と、ウエハ面内のエッチングの均一性が低くなったり、
あるいは所定の膜厚以上にエッチングされるおそれがあ
る。
In the case of the one-bath system, pure water is supplied into the treatment tank 4 filled with the cleaning treatment liquid to replace the pure water for rinsing, so that the pure water flow rate is increased to, for example, about 50 liters per minute. Even so, it takes a certain amount of time to completely replace with pure water. Therefore, unless the flow of the rinse liquid in the processing tank 4 and the processing sequence are carefully devised, the etching on the wafer surface can be performed. Is less uniform,
Alternatively, there is a possibility that the film may be etched to a predetermined thickness or more.

【0034】そこで洗浄処理液の供給については、図7
(a)に示すように図示しない洗浄処理液供給システム
から処理槽4へ至る途中に、洗浄処理液の秤量タンク8
1を設けると共に純水供給路の途中に純水の秤量タンク
82を設け、処理槽4内に供給される洗浄処理液と純水
とを夫々所定量秤量して、処理槽4内における洗浄処理
液例えばフッ酸溶液の濃度を、0.5体積%から例えば
0.2体積%まで希薄化することが望ましい。このよう
にすればエッチング速度が小さくなるので、洗浄処理液
からリンス液に置換される間のエッチングの影響は小さ
くなり、このため所定の膜厚まで高い均一性でエッチン
グできる上、純水の消費量も低減できる。
Therefore, regarding the supply of the cleaning treatment liquid, FIG.
As shown in (a), the cleaning treatment liquid weighing tank 8 is provided on the way from the cleaning treatment liquid supply system (not shown) to the treatment tank 4.
1 and a pure water weighing tank 82 is provided in the middle of the pure water supply path, and a predetermined amount of each of the cleaning processing liquid and the pure water supplied into the processing tank 4 is weighed to perform the cleaning processing in the processing tank 4. It is desirable to dilute the concentration of the liquid such as hydrofluoric acid solution from 0.5% by volume to, for example, 0.2% by volume. By doing so, the etching rate is reduced, so that the effect of etching during the replacement of the cleaning treatment liquid with the rinse liquid is reduced, and therefore, etching can be performed with high uniformity up to a predetermined film thickness, and consumption of pure water is reduced. The amount can also be reduced.

【0035】またこのように洗浄処理液を希薄化するた
めには、純水を秤量タンク81で秤量する代りに、図7
(b)に示すように処理槽4内に秤量センサ83を設
け、この秤量センサ83により純水を秤量し次いで秤量
タンク81で秤量された洗浄処理液を処理槽4内へ供給
するようにしてもよい。この場合秤量センサ83として
は、例えば窒素ガスを吹き込んで水頭圧が所定値を越え
たことを窒素ガスの圧力計で知ることにより、処理槽内
の純水を秤量できるものを用いることができる。
Further, in order to dilute the cleaning treatment liquid in this way, instead of weighing pure water in the weighing tank 81, FIG.
As shown in (b), a weighing sensor 83 is provided in the treatment tank 4, pure water is weighed by the weighing sensor 83, and then the cleaning treatment liquid weighed in the weighing tank 81 is supplied into the treatment tank 4. Good. In this case, as the weighing sensor 83, for example, a sensor which can weigh pure water in the processing tank by blowing nitrogen gas and knowing that the head pressure exceeds a predetermined value with a nitrogen gas pressure gauge can be used.

【0036】一方洗浄処理例えばエッチングの均一性を
高めるためには、次のような手法を採用してもよい。即
ち上述実施例では、洗浄処理からリンス処理に移行する
ときに処理槽4の底部から純水を供給し、整流手段7に
より処理槽4内の液流が整流化されているため、図8に
示すように処理槽4の下部側から順次洗浄処理液例えば
フッ酸濃度が下がり純水で置換されていく。従ってこの
置換プロセスにおいてはウエハWの下部側ほどエッチン
グ量が小さく、均一にエッチングされない。
On the other hand, in order to improve the uniformity of the cleaning process such as etching, the following method may be adopted. That is, in the above-described embodiment, pure water is supplied from the bottom of the treatment tank 4 when the cleaning treatment is changed to the rinse treatment, and the liquid flow in the treatment tank 4 is rectified by the rectifying means 7. As shown in the drawing, the cleaning treatment liquid, for example, the concentration of hydrofluoric acid gradually decreases from the lower side of the treatment tank 4 and is replaced with pure water. Therefore, in this replacement process, the etching amount is smaller on the lower side of the wafer W and the etching is not performed uniformly.

【0037】そこでウエハWを洗浄処理液に浸漬すると
きに、前記置換プロセスにおけるエッチングの不均一性
を相殺するようにウエハWを投入するようにすることが
好ましい。仮にウエハWを素早く投入したとすると、前
記置換プロセスの影響が出てしまうが、ウエハWの投入
速度を少し遅くすれば、投入プロセスにおいてはウエハ
Wの下部側ほど浸漬時間が長いのでエッチング量が多く
なる。従ってウエハの投入速度を最適化することによ
り、具体的には既述した保持具搬送手段61の降下速度
を最適化することにより、置換プロセスと投入プロセス
とにおけるエッチング量の不均一性が相殺され、結果と
して均一な洗浄処理例えばエッチングを行うことができ
る。
Therefore, when immersing the wafer W in the cleaning treatment liquid, it is preferable to introduce the wafer W so as to cancel the nonuniformity of etching in the replacement process. If the wafer W is loaded quickly, the replacement process will be affected. However, if the loading speed of the wafer W is slightly slowed down, the lower the wafer W is in the loading process, the longer the immersion time is, so that the etching amount is reduced. Will increase. Therefore, by optimizing the wafer loading speed, specifically, by optimizing the lowering speed of the holder transporting means 61 described above, the nonuniformity of the etching amount in the replacement process and the loading process is offset. As a result, a uniform cleaning process such as etching can be performed.

【0038】ウエハの投入速度とエッチングの均一性と
の関係を調べるために、ウエハの投入速度を2.6cm
/秒、4.4cm/秒、5.4cm/秒の3つに設定し
て酸化膜のエッチングを行い、夫々の場合についてウエ
ハの膜厚の最大値と最小値との差(つまり山谷の差)を
調べたところ、4.4cm/秒が最も小さく、エッチン
グの均一性が高かった。ただし洗浄処理液としてはフッ
酸溶液0.5%を用い、純水流量を毎分15リットルと
した。この実験からもわかるように洗浄処理液の種類や
濃度によってはウエハの投入速度によりエッチングの均
一性が左右され、従って最適な投入速度でウエハを洗浄
処理液内に投入することが好ましい。
In order to investigate the relationship between the wafer loading speed and the etching uniformity, the wafer loading speed was 2.6 cm.
/ Sec, 4.4 cm / sec, and 5.4 cm / sec, the oxide film is etched, and the difference between the maximum value and the minimum value of the wafer film thickness in each case (that is, the difference between the peaks and valleys) ), The smallest value was 4.4 cm / sec, and the etching uniformity was high. However, a hydrofluoric acid solution of 0.5% was used as the cleaning treatment liquid, and the flow rate of pure water was set to 15 liters per minute. As can be seen from this experiment, the uniformity of etching depends on the wafer loading speed depending on the type and concentration of the cleaning processing liquid. Therefore, it is preferable to load the wafer into the cleaning processing liquid at the optimum loading speed.

【0039】また1バス洗浄装置では、洗浄処理液を使
い捨てにするため、常にウエハには新液が供給され、従
って洗浄処理液の清浄度が高いので図9に示すようにフ
ィルタを含む洗浄処理液の循環路を設けない構成として
もよく、このようにすればコストダウンが図れる。ただ
しこの場合洗浄処理液を撹拌するための手段例えば不活
性ガスなどのバブリング手段91、92を処理槽4内に
設けると共に、洗浄処理液の温調を行うために処理槽4
内あるいは外部にヒータ93を設けることが好ましい。
Further, in the one-bath cleaning apparatus, since the cleaning treatment liquid is disposable, a new liquid is always supplied to the wafer, and therefore the cleaning treatment liquid has a high degree of cleanliness. Therefore, as shown in FIG. 9, the cleaning treatment including the filter is performed. A liquid circulation path may not be provided, and the cost can be reduced by doing so. However, in this case, a means for stirring the cleaning treatment liquid, for example, bubbling means 91, 92 such as an inert gas is provided in the treatment bath 4, and the treatment bath 4 is used to control the temperature of the cleaning treatment liquid.
It is preferable to provide the heater 93 inside or outside.

【0040】以上において本発明は、フッ酸溶液により
酸化膜をエッチングする場合に限らず、例えばリン酸溶
液によって窒化膜をエッチングする場合やリン酸、酢
酸、硝酸の混合液によってアルミニウムをエッチングす
る場合にも適用できる。またその他洗浄処理としては、
APM溶液(アンモニア+過酸化水素水+純水)により
パーティクルの除去を行う場合、HPM溶液(塩酸+過
酸化水素水+純水)により金属汚染を清浄する場合、あ
るいはSPM溶液(硫酸+過酸化水素水)によりレジス
ト膜の有機物を除去する場合などであってもよい。なお
被処理基板としては、液晶基板やプリント基板などであ
ってもよい。
In the above, the present invention is not limited to the case of etching an oxide film with a hydrofluoric acid solution, for example, the case of etching a nitride film with a phosphoric acid solution or the case of etching aluminum with a mixed solution of phosphoric acid, acetic acid and nitric acid. Can also be applied to. In addition, as other cleaning processing,
When removing particles with APM solution (ammonia + hydrogen peroxide solution + pure water), when cleaning metal contamination with HPM solution (hydrochloric acid + hydrogen peroxide solution + pure water), or with SPM solution (sulfuric acid + peroxide) For example, the organic matter of the resist film may be removed with (hydrogen water). The substrate to be processed may be a liquid crystal substrate or a printed circuit board.

【0041】[0041]

【発明の効果】本発明によれば、洗浄処理とリンス処理
とを共通の処理槽で行うようにし、収納容器における被
処理体の配列ピッチよりも狭いピッチで専用の保持具に
複数の被処理体を保持させて、前記処理槽内への浸漬、
取り出しを行うようにしている。従って処理槽の数が少
なくて済み、しかも処理槽を小型化に作れるので洗浄装
置を小型化でき、また処理槽の小型化により洗浄処理液
からリンス液への置換を迅速に行うことができるため、
処理効率が高くなる。
According to the present invention, the cleaning process and the rinsing process are performed in a common processing tank, and a plurality of objects to be processed are provided on a dedicated holder at a pitch narrower than the arrangement pitch of the objects to be processed in the storage container. Hold the body, dipping in the treatment tank,
I try to take it out. Therefore, the number of processing tanks is small, and the processing tanks can be made smaller, so that the cleaning device can be downsized, and the cleaning processing liquid can be quickly replaced with the rinse liquid by downsizing the processing tanks. ,
Higher processing efficiency.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例に係る洗浄装置の全体構成を概
略的に示す斜視図である。
FIG. 1 is a perspective view schematically showing an overall configuration of a cleaning device according to an embodiment of the present invention.

【図2】処理槽及びウエハ保持具を示す斜視図である。FIG. 2 is a perspective view showing a processing tank and a wafer holder.

【図3】ウエハカセット、ウエハの移載手段及びウエハ
保持具を示す斜視図である。
FIG. 3 is a perspective view showing a wafer cassette, a wafer transfer unit, and a wafer holder.

【図4】本発明の実施例に用いられる処理槽の一例を示
す断面図である。
FIG. 4 is a cross-sectional view showing an example of a processing tank used in an embodiment of the present invention.

【図5】整流板の一例を示す斜視図である。FIG. 5 is a perspective view showing an example of a current plate.

【図6】本発明の実施例の作用を示す説明図である。FIG. 6 is an explanatory view showing the operation of the embodiment of the present invention.

【図7】洗浄処理液の供給方法の一例を示す説明図であ
る。
FIG. 7 is an explanatory diagram showing an example of a method for supplying a cleaning treatment liquid.

【図8】洗浄処理液からリンス液への置換の様子を示す
説明図である。
FIG. 8 is an explanatory diagram showing how the cleaning treatment liquid is replaced with a rinse liquid.

【図9】本発明の実施例に用いられる処理槽の他の例を
示す断面図である。
FIG. 9 is a cross-sectional view showing another example of the processing tank used in the embodiment of the present invention.

【図10】従来の洗浄装置を示す説明図である。FIG. 10 is an explanatory diagram showing a conventional cleaning device.

【符号の説明】[Explanation of symbols]

3 ウエハ保持具 31〜33 保持棒 34 保持溝 35 移動台 4 処理槽 43 リンス液供給管 52 突き上げ部材 53 保持溝 6 ウエハチャック 61 保持具搬送手段 7 整流手段 8 洗浄処理液供給部 81、82 秤量タンク 91、92 バブリング手段 93 ヒータ 3 Wafer Holders 31 to 33 Holding Rods 34 Holding Grooves 35 Moving Stands 4 Processing Tanks 43 Rinsing Liquid Supply Pipes 52 Push-up Members 53 Holding Grooves 6 Wafer Chucks 61 Holding Tools Conveying Means 7 Rectifying Means 8 Cleaning Processing Liquid Supplying Units 81, 82 Weighing Tank 91, 92 Bubbling means 93 Heater

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 複数の被処理基板を収納する収納容器か
ら被処理基板を取り出して洗浄する洗浄装置において、 前記収納容器における被処理基板の配列ピッチよりも狭
いピッチで被処理基板を並列に保持するように保持溝が
形成された保持具と、 前記収納容器から被処理基板を取り出して前記保持具に
移し替える移載手段と、 前記被処理基板を洗浄処理液で洗浄し、次いでリンス液
でリンスするための処理槽と、 この処理槽内に洗浄処理液を供給するための洗浄処理液
供給部と、 前記処理槽内にリンス液を供給するためのリンス液供給
部と、 前記被処理基板が保持された保持具を前記処理槽内の洗
浄処理液に浸漬する保持具搬送手段と、を備え、 前記被処理基板を洗浄処理液により洗浄処理した後、前
記リンス液供給部からリンス液を処理槽内に導入してリ
ンス液で洗浄処理液を置換することを特徴とする洗浄装
置。
1. A cleaning device for removing a substrate to be processed from a storage container that stores a plurality of substrates to be processed and holding the substrates in parallel at a pitch narrower than the arrangement pitch of the substrates to be processed in the storage container. A holding tool having a holding groove formed therein, a transfer means for taking out the substrate to be processed from the storage container and transferring it to the holder, and cleaning the substrate to be processed with a cleaning treatment liquid, and then using a rinse liquid. A treatment bath for rinsing, a cleaning treatment liquid supply unit for supplying a cleaning treatment liquid into the treatment bath, a rinse liquid supply unit for supplying a rinse liquid into the treatment bath, and the substrate to be treated. And a holder transporting means for immersing the held holder in the cleaning treatment liquid in the processing tank, and after cleaning the substrate to be processed with the cleaning treatment liquid, rinse liquid from the rinse liquid supply unit is supplied. place Cleaning apparatus, characterized in that to replace the cleaning liquid is introduced into the tank with a rinsing liquid.
【請求項2】 保持具の保持溝のピッチは、2mm以上
であることを特徴とする請求項1記載の洗浄装置。
2. The cleaning device according to claim 1, wherein the pitch of the holding groove of the holder is 2 mm or more.
【請求項3】 複数の被処理基板を収納する収納容器か
ら被処理基板を取り出して、前記収納容器における被処
理基板の配列ピッチよりも狭いピッチで保持具に移し替
える工程と、 前記処理槽内に洗浄処理液を供給する工程と、 前記被処理基板が保持された保持具を前記処理槽内の洗
浄処理液に浸漬して被処理基板を洗浄処理する工程と、 前記被処理基板の洗浄処理後に、前記処理槽内にリンス
液を供給してリンス液で洗浄処理液を置換し、被処理基
板をリンスする工程と、を備えたことを特徴とする洗浄
方法。
3. A process of taking out a substrate to be processed from a storage container for storing a plurality of substrates to be processed and transferring the substrate to a holder at a pitch narrower than an arrangement pitch of the substrates to be processed in the storage container; A step of supplying a cleaning treatment liquid to the substrate, a step of cleaning the substrate to be treated by immersing the holder holding the substrate to be treated in the cleaning treatment liquid in the treatment tank, and a cleaning treatment of the substrate to be treated. After that, a step of supplying a rinsing liquid into the processing tank, substituting the rinsing liquid for the rinsing liquid, and rinsing the substrate to be processed, is carried out.
JP7019824A 1995-01-12 1995-01-12 Cleaning device and its method Pending JPH08195373A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP7019824A JPH08195373A (en) 1995-01-12 1995-01-12 Cleaning device and its method
US08/583,979 US5730162A (en) 1995-01-12 1996-01-11 Apparatus and method for washing substrates
KR1019960000944A KR100239942B1 (en) 1995-01-12 1996-01-12 Apparatus and method for washing substrates
TW085114511A TW349232B (en) 1995-01-12 1996-01-12 Substrate cleaning device and substrate cleaning method
TW085114510A TW349231B (en) 1995-01-12 1996-01-12 Substrate cleaning device and substrate cleaning method
TW085100348A TW348264B (en) 1995-01-12 1996-01-12 Apparatus and method for washing substrates
TW085114509A TW348265B (en) 1995-01-12 1996-01-12 Apparatus and method for washing substrates
US08/976,262 US5817185A (en) 1995-01-12 1997-11-21 Method for washing substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7019824A JPH08195373A (en) 1995-01-12 1995-01-12 Cleaning device and its method

Publications (1)

Publication Number Publication Date
JPH08195373A true JPH08195373A (en) 1996-07-30

Family

ID=12010062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7019824A Pending JPH08195373A (en) 1995-01-12 1995-01-12 Cleaning device and its method

Country Status (1)

Country Link
JP (1) JPH08195373A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6612801B1 (en) 1999-08-26 2003-09-02 Tokyo Electron Limited Method and device for arraying substrates and processing apparatus thereof
KR20210050464A (en) 2019-10-28 2021-05-07 도쿄엘렉트론가부시키가이샤 Batch forming device and substrate processing apparatus
JP2022009259A (en) * 2017-12-04 2022-01-14 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6612801B1 (en) 1999-08-26 2003-09-02 Tokyo Electron Limited Method and device for arraying substrates and processing apparatus thereof
JP2022009259A (en) * 2017-12-04 2022-01-14 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
KR20210050464A (en) 2019-10-28 2021-05-07 도쿄엘렉트론가부시키가이샤 Batch forming device and substrate processing apparatus

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