JPH0818867A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPH0818867A JPH0818867A JP6149612A JP14961294A JPH0818867A JP H0818867 A JPH0818867 A JP H0818867A JP 6149612 A JP6149612 A JP 6149612A JP 14961294 A JP14961294 A JP 14961294A JP H0818867 A JPH0818867 A JP H0818867A
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、固体撮像装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device.
【０００２】[0002]
【従来の技術】固体撮像装置に関して、走査速度、感
度、ＳＮ（信号対雑音）比の特性を向上させるために、
ＴＤＩ（Ｔｉｍｅ Ｄｅｌａｙ Ｉｎｔｅｇｒａｔｉｏ
ｎ）方式が提案されている。2. Description of the Related Art In order to improve the characteristics of scanning speed, sensitivity, and SN (signal to noise) ratio of a solid-state image pickup device,
TDI (Time Delay Integration)
n) method has been proposed.
【０００３】図８は、ＴＤＩ方式で用いられる固体撮像
装置の一例の平面図を示している。入射光を受けて光電
変換により光を電子に変換するフォトダイオード等から
なる画素８１ａを複数個（ｍ個）直線状にならべた画素
列８１が、複数本（ｎ本）平行に配設されている。各画
素列は、それぞれ画素列に平行配置された転送電極８３
を有しており、画素列と転送電極が交互に配設された構
造となっている。FIG. 8 is a plan view showing an example of a solid-state image pickup device used in the TDI system. A plurality of (n) pixel rows 81 in which a plurality of (m) pixels 81a composed of photodiodes or the like that receive incident light and convert light into electrons by photoelectric conversion are arranged linearly are arranged in parallel. There is. Each pixel column has a transfer electrode 83 arranged in parallel with the pixel column.
And has a structure in which pixel columns and transfer electrodes are alternately arranged.
【０００４】これらの転送電極は、第ｋ列（１≦ｋ≦ｎ
−１）の転送電極に注目すると、図中において当該電極
の左側に隣接する第ｋ列の画素列の第ｉ行（１≦ｉ≦
ｍ）の画素から右側に隣接する第（ｋ＋１）列の画素列
の第ｉ行の画素へ、電荷を転送する。These transfer electrodes are arranged in the k-th column (1≤k≤n
Focusing on the transfer electrode of (-1), the i-th row (1 ≦ i ≦ of the k-th pixel column adjacent to the left side of the electrode in the figure).
The charge is transferred from the pixel m) to the pixel on the i-th row of the pixel column of the (k + 1) th column adjacent to the right side.
【０００５】以下、第ｉ行、第ｊ列（１≦ｊ≦ｎ）の画
素を、画素（ｉ、ｊ）と表すことにする。Hereinafter, the pixel on the i-th row and the j-th column (1≤j≤n) will be referred to as a pixel (i, j).
【０００６】このＴＤＩ方式の固体撮像装置において、
画素（１、１）で発生した信号電荷は、第１列の転送電
極８３を通して画素（１、２）へ移され、順次画素
（１、３）、（１、４）、…、（１、ｎ−１）、（１、
ｎ）まで転送され、さらに信号電荷転送部８４によって
ＣＣＤレジスタ８５に送られる。そして、この信号電荷
はＣＣＤレジスタ８５から出力部８６へ転送され、ここ
で適当な出力信号に変換されて出力される。In this TDI type solid-state image pickup device,
The signal charges generated in the pixel (1, 1) are transferred to the pixel (1, 2) through the transfer electrode 83 of the first column, and are sequentially pixel (1, 3), (1, 4), ..., (1, n-1), (1,
n) and further sent to the CCD register 85 by the signal charge transfer unit 84. Then, this signal charge is transferred from the CCD register 85 to the output section 86, where it is converted into an appropriate output signal and output.
【０００７】ＴＤＩ方式で画像を読み取り走査する時、
画像はセンサ上を画素列に垂直な方向（Ａ）へ移動す
る。When an image is read and scanned by the TDI method,
The image moves on the sensor in the direction (A) perpendicular to the pixel column.
【０００８】このとき、画素列間の電荷の転送速度は、
センサ上の画像走査速度と同期しており、ある画像に対
応する信号電荷には、常に同一の画像が照射される画素
にあり、対応する信号電荷を加算する。すなわち、ある
特定の画像部分からの入射光によって第１列の画素で発
生した信号電荷が第２列の画素に転送された時点におい
ては、この信号電荷を発生させた入射光は第２列の画素
に当たっており、ここでこの入射光によって発生した信
号電荷は第１列の画素で発生して転送されてきた信号電
荷に加算される。At this time, the charge transfer rate between the pixel columns is
Synchronized with the image scanning speed on the sensor, a signal charge corresponding to a certain image is always in a pixel irradiated with the same image, and the corresponding signal charge is added. That is, at the time when the signal charges generated in the pixels in the first column are transferred to the pixels in the second column by the incident light from a certain specific image portion, the incident light in which the signal charges are generated are in the second column. The pixel charge is applied to the pixel, and the signal charge generated by the incident light is added to the signal charge generated and transferred in the pixel in the first column.
【０００９】図９は、図８に示した固体撮像装置の画素
列及び転送部の走査方向の断面図で、図１０は図９に対
応した電位分布図、図１１は転送電極９３に印加される
パルス電圧を示す図である。ある特定の入射光によって
画素９１−１で発生した信号電荷は、図１１の転送パル
スによって転送部９３−１を通って画素９１−２へ転送
される。この信号電荷が、画素９１−２に転送された時
点において、この信号電荷に対応する入射光は画素９１
−２に当たっており、ここで発生した信号電荷が画素９
１−１から転送されてきた信号電荷に加算される。FIG. 9 is a sectional view in the scanning direction of the pixel column and the transfer section of the solid-state image pickup device shown in FIG. 8, FIG. 10 is a potential distribution diagram corresponding to FIG. 9, and FIG. 11 is applied to the transfer electrode 93. It is a figure which shows the pulse voltage. The signal charge generated in the pixel 91-1 by a certain specific incident light is transferred to the pixel 91-2 through the transfer unit 93-1 by the transfer pulse of FIG. When this signal charge is transferred to the pixel 91-2, the incident light corresponding to this signal charge becomes the pixel 91.
-2, and the signal charge generated here is applied to the pixel 9
The signal charge transferred from 1-1 is added.
【００１０】図９において、画素９１、電極９３内に
は、基板の不純物分布等を変化させて、電荷の逆流を防
止する電位障壁が設けられている。In FIG. 9, a potential barrier is provided in the pixel 91 and the electrode 93 to prevent the backflow of charges by changing the impurity distribution of the substrate.
【００１１】以上説明したように、ある画像部分からの
入射光によって発生した信号電荷は最後の第ｎ列まで順
次加算されていく。As described above, the signal charges generated by the incident light from a certain image portion are sequentially added up to the last nth column.
【００１２】したがって、ある画像部分からの入射光に
対応する信号電荷を発生する画素の総面積は、合計で画
素ｎ個分となるので、高感度が得られる。Therefore, the total area of the pixels that generate the signal charges corresponding to the incident light from a certain image portion is a total of n pixels, so that high sensitivity can be obtained.
【００１３】[0013]
【発明が解決しようとする課題】ところで、画素読み取
り装置の解像度は画素列方向（Ｂ）と、画素列に垂直方
向（Ａ）で通常同じであるので、画素列内の画素ピッチ
（ｄＢ）と、画素列間のピッチ（ｄＡ）は同じでなけれ
ばならない。したがって、高解像度化等の要求から走査
ピッチが縮小されると、画素列に垂直方向（Ａ）の画素
開口幅は、転送電極４３があるため、狭ってゆき、逆に
感度と飽和電荷量が低下するという問題を生じる。By the way, since the resolution of the pixel reading device is usually the same in the pixel column direction (B) and in the pixel column vertical direction (A), the pixel pitch in the pixel column (dB) is the same. , The pitch (dA) between the pixel columns must be the same. Therefore, when the scanning pitch is reduced due to the demand for higher resolution and the like, the pixel opening width in the vertical direction (A) in the pixel row becomes narrower due to the transfer electrode 43, and conversely, the sensitivity and the saturation charge amount are reduced. Causes a problem that
【００１４】例えば、図９で画素列のピッチを１０μ
ｍ、転送電極９３のバリア部長（９３ａ）を２μｍ、蓄
積部長（９３ｂ）を４μｍとすると、画素部のバリア部
長９１ａと蓄積部長９１ｂは２μｍしかとれず、感度低
下と、画素部の飽和電荷量が小さくなるという問題が生
じる。For example, in FIG. 9, the pixel row pitch is 10 μm.
m, the barrier section length (93a) of the transfer electrode 93 is 2 μm, and the storage section length (93b) is 4 μm, the barrier section length 91a and the storage section length 91b of the pixel section can be only 2 μm, and the sensitivity is lowered and the saturation charge amount of the pixel section is reduced. Is a problem that becomes smaller.
【００１５】更に、画素列ピッチが小さくなると、画素
開口が取れなくなる場合もある。Further, if the pixel column pitch becomes smaller, the pixel aperture may not be formed.
【００１６】本発明の目的は、ＴＤＩ方式の固体撮像装
置において、走査ピッチが小さくなっても、感度の低下
を防止することができる固体撮像装置を提供することで
ある。It is an object of the present invention to provide a solid-state image pickup device of the TDI type which can prevent a decrease in sensitivity even if the scanning pitch becomes small.
【００１７】[0017]
【課題を解決するための手段】本発明によれば、光電変
換を行なう一次元状に配列された複数の感光画素からな
る複数の画素列と、各画素列間に設けられ所定の画素列
に蓄積又は発生した電荷を隣接した画素列へ転送する転
送部とを備え、走査方向が画素列と直交する方向である
固体撮像装置において、画素列のピッチが走査ピッチの
Ｎ倍であり、かつ転送部は、信号電荷を一時保持するこ
とができる蓄積部を併設した転送電極をそれぞれ（Ｎ−
１）組有することを特徴とする。According to the present invention, a plurality of pixel columns composed of a plurality of one-dimensionally arranged photosensitive pixels for photoelectric conversion and a predetermined pixel column provided between the pixel columns are provided. In a solid-state imaging device including a transfer unit that transfers the accumulated or generated charge to an adjacent pixel row, and the scanning direction is a direction orthogonal to the pixel row, the pixel row pitch is N times the scanning pitch, and the transfer is performed. The transfer electrodes provided with an accumulating unit capable of temporarily holding the signal charge are respectively (N-
1) It is characterized by having a set.
【００１８】[0018]
【作用】走査方向が画素列に対して直交する方向である
ＴＤＩ方式の固体撮像装置において、任意の第ｋ列と第
（ｋ＋１）列の画素列との間隔が走査ピッチのＮ倍であ
り、この画素列間にある（Ｎ−１）組の蓄積部及び転送
電極は、Ｎ≧２の時通常走査ピッチの（Ｎ−１）倍以下
の幅の領域に形成する事が可能なので、走査ピッチを小
さくしたときでも、画素をほぼ走査ピッチ分の幅で形成
でき、有効面積の減少を防止できる。また、転送部に電
荷を一時蓄積する蓄積部が設けられているので、転送中
の特定の信号電荷に対応する入射光が画素列の間に照射
しているときは、電荷を蓄積部に保持しておくことがで
きる。In the TDI type solid-state image pickup device in which the scanning direction is orthogonal to the pixel column, the interval between the arbitrary kth column and the (k + 1) th pixel column is N times the scanning pitch, Since the (N-1) sets of storage portions and transfer electrodes between the pixel columns can be formed in a region having a width of (N-1) times or less the normal scanning pitch when N ≧ 2, the scanning pitch can be reduced. Even when the value is reduced, the pixels can be formed with a width substantially equal to the scanning pitch, and the reduction of the effective area can be prevented. Further, since the transfer section is provided with a storage section for temporarily storing charges, when the incident light corresponding to a specific signal charge being transferred is radiated between the pixel columns, the charge is held in the storage section. You can keep it.
【００１９】[0019]
【実施例】以下、図面を参照しながら本発明の一実施例
について説明する。An embodiment of the present invention will be described below with reference to the drawings.
【００２０】図１は、本発明の一実施例にかかる固体撮
像装置の概略構成を示す平面図である。同図から明らか
なように、この実施例では従来の固体撮像装置の１ピッ
チ分の幅を有する画素１ａを直線状に配列した画素列１
−１、１−２、…、１−（ｎ−１）、１−ｎを複数列平
行に配設し、これらの画素列の間隔が、画素列と直交す
る方向の走査ピッチの２倍となっている。また、任意の
隣接する画素列間には、信号電荷を一時蓄積することが
できる蓄積部２と転送電極３を配設している。FIG. 1 is a plan view showing a schematic structure of a solid-state image pickup device according to an embodiment of the present invention. As is apparent from the figure, in this embodiment, a pixel array 1 in which pixels 1a having a width of one pitch of the conventional solid-state imaging device are linearly arranged
-1, 1-2, ..., 1- (n-1), 1-n are arranged in parallel in a plurality of columns, and the interval between these pixel columns is twice the scanning pitch in the direction orthogonal to the pixel columns. Has become. Further, a storage section 2 capable of temporarily storing signal charges and a transfer electrode 3 are arranged between any adjacent pixel columns.
【００２１】図２は、図１の画素列及び転送部の走査方
向の拡大断面図、図３は図２に対応した電位分布図、図
４は、画素列間の電極に印加されるパルスタイミング図
である。FIG. 2 is an enlarged cross-sectional view in the scanning direction of the pixel column and the transfer section of FIG. 1, FIG. 3 is a potential distribution diagram corresponding to FIG. 2, and FIG. 4 is a pulse timing applied to an electrode between pixel columns. It is a figure.
【００２２】この実施例における動作を説明する。第１
列の電荷について検討してみる。入射光が第１列の画素
列１−１（２１−１）に当たると、光電変換により信号
電荷が発生し、所定の期間この画素列１−１（２１−
１）に蓄積される（）。この時点ｔ1 において、蓄積
部２−１（２２−１）の下には、前のサイクルで転送さ
れた電荷′が蓄積されている。所定の光電期間終了
後、時刻ｔ2 に、蓄積部２−１（２２−１）に蓄積され
ている電荷′が電極３−１（２３−１）の下に移動し
（′）、次に時刻ｔ3 で、画素列１−１（２１−１）
の電荷は蓄積部２−１（２２−１）へ移動される
（）。時刻ｔ4 で電極３−１（２３−１）の下の電荷
′を第２列の画素列１−２（２１−２）に移動させ
る。最後に、蓄積部２−１（２２−１）の下に蓄積され
ていた電荷が、時刻ｔ5 で浅い位置′に移動され
る。The operation of this embodiment will be described. First
Consider the column charge. When the incident light hits the first pixel row 1-1 (21-1), a signal charge is generated by photoelectric conversion, and this pixel row 1-1 (21-) is generated for a predetermined period.
It is accumulated in 1) (). At this time point t 1 , the charge ′ transferred in the previous cycle is accumulated under the accumulation unit 2-1 (22-1). After completion predetermined photoelectric period, the time t 2, the charge stored in the storage unit 2-1 (22-1) 'is moved under the electrode 3-1 (23-1) ('), then At time t 3 , the pixel column 1-1 (21-1)
Is transferred to the storage section 2-1 (22-1) (). Electrode 3-1 at time t 4 (the 23-1) charge under the 'move to the second column of pixel columns 1-2 (21-2). Finally, the charges accumulated under the accumulation unit 2-1 (22-1) are moved to the shallow position ′ at time t 5 .
【００２３】この転送動作は、走査ピッチの１単位を走
査する時間、すなわち走査の１周期と同期して行われる
ので、特定の画像部分からの入射光が当たっている画素
列には、これと同一の入射光によって、当該画素列の１
列前までの画素列で発生した信号電荷が蓄積されてい
る。すなわち、ある時点において、第ｋ列の画素に特定
の画像部分からの入射光が当たっているとすると、この
画素には、第１列から第（ｋ−１）列までの画素で同一
の入射光によって発生し、順次転送されながら蓄積され
てきた信号電荷がすべて蓄積されている。この１周期後
には、当該入射光は、第ｋ列の画素列と第（ｋ＋１）列
の画素列との間にある第ｋ列の転送電極部に当たってい
る。このとき、この入射光による信号電荷は、この部分
の蓄積部に保持されている。This transfer operation is performed in synchronization with the time for scanning one unit of the scanning pitch, that is, one scanning cycle, so that the pixel row irradiated with the incident light from a specific image portion will be affected by this. By the same incident light, 1
The signal charges generated in the pixel columns before the column are accumulated. That is, at a certain point of time, if the pixel in the k-th column is exposed to the incident light from a specific image portion, this pixel has the same incidence in the pixels from the first column to the (k-1) -th column. All the signal charges generated by light and accumulated while being sequentially transferred are accumulated. After this one cycle, the incident light strikes the transfer electrode portion of the k-th row between the k-th pixel row and the (k + 1) -th pixel row. At this time, the signal charge due to this incident light is held in the storage section of this portion.
【００２４】このようにして、ある特定の画像部分から
の入射光によって、第１列から第ｎ列までの画素列にお
いて発生した信号電荷は、順次すべて加算された後、信
号電荷転送部４によってＣＣＤレジスタ５へ転送され、
さらに出力部６まで転送されて、ここで適当な出力信号
に変換されて出力される。In this way, the signal charges generated in the pixel columns from the first column to the n-th column by the incident light from a specific image portion are all sequentially added, and then the signal charge transfer unit 4 is used. Transferred to CCD register 5,
Further, it is transferred to the output unit 6, where it is converted into an appropriate output signal and output.
【００２５】したがって、ある画像部分からの入射光に
対応する信号電荷を発生する画素の総面積は、合計で画
素ｎ個分となるので、個々の画素の大きさが小さくても
高感度が得られる。Therefore, the total area of the pixels that generate the signal charges corresponding to the incident light from a certain image portion is a total of n pixels, so that high sensitivity can be obtained even if the size of each pixel is small. To be
【００２６】以上の実施例においては画素列間のピッチ
を走査ピッチの２倍としているが、整数Ｎ倍（ただし、
２≦Ｎ）とすることができる。この場合、画素列間には
（Ｎ−１）組の蓄積部と転送部が設けられる。In the above embodiments, the pitch between the pixel columns is twice the scanning pitch, but an integer N times (however,
2 ≦ N). In this case, (N-1) sets of storage units and transfer units are provided between the pixel columns.
【００２７】図９と同一寸法で電極２２、２３を形成し
たとすると図２に示す様に、画素２１−２の蓄積部は６
μｍとれ、十分な、飽和電荷量と感度が確保できる。Assuming that the electrodes 22 and 23 are formed with the same dimensions as in FIG. 9, as shown in FIG.
It is possible to secure a sufficient saturated charge amount and sensitivity with a thickness of μm.
【００２８】図５、６、７に他の実施例を示す。図２に
比べ、画素５１、電極５２、５３の構造と駆動タイミン
グが異なる。信号電荷の転送は、ＣＣＤレジスタ５に近
い画素列から（５１−ｎ、５１−（ｎ−１）、…、５１
−２、５１−１）順次転送される。画素５１−１にある
電荷の転送動作は、まず、電極５３−１が開き、電極５
２−１下の電荷を次の画素列５１−２へ転送し、次に電
極５２−１を開閉し、５１−１の電荷を５２−１下へ移
す。Another embodiment is shown in FIGS. Compared with FIG. 2, the structure and driving timing of the pixel 51, the electrodes 52 and 53 are different. The signal charges are transferred from the pixel row near the CCD register 5 (51-n, 51- (n-1), ..., 51).
-2, 51-1) Sequential transfer. In the charge transfer operation in the pixel 51-1, first, the electrode 53-1 is opened and the electrode 5 is opened.
The charge under 2-1 is transferred to the next pixel column 51-2, and then the electrode 52-1 is opened / closed to transfer the charge of 51-1 below 52-1.
【００２９】図２に示すように画素部は１０μｍと図８
より大きく取れるが、駆動タイミングが複雑になる欠点
がある。As shown in FIG. 2, the pixel portion has a thickness of 10 μm.
Although it can be made larger, it has a drawback that the driving timing becomes complicated.
【００３０】[0030]
【発明の効果】以上説明したように、本発明にかかる固
体撮像装置においては、画素列間距離を走査ピッチのＮ
倍にし、画素幅を走査ピッチ分確保しているので、走査
ピッチを縮小した場合でも十分な画素の有効面積を得る
ことができ、また、画素列間に配設した転送部には蓄積
部を併設しており、特定の画像部分からの入射光によっ
て発生した信号電荷を、転送しながら順次加算していく
ことができるので、高い感度と十分な飽和電荷量を得る
ことができる。As described above, in the solid-state image pickup device according to the present invention, the distance between pixel columns is set to the scanning pitch N.
Since the pixel width is doubled and the pixel width is secured for the scanning pitch, a sufficient effective area of pixels can be obtained even when the scanning pitch is reduced, and a storage section is provided in the transfer section arranged between the pixel columns. Since they are provided side by side, the signal charges generated by the incident light from a specific image portion can be sequentially added while being transferred, so that high sensitivity and a sufficient saturation charge amount can be obtained.
【図１】本発明にかかる固体撮像装置の一実施例を示す
平面図。FIG. 1 is a plan view showing an embodiment of a solid-state imaging device according to the present invention.
【図２】図１に記載の本発明にかかる固体撮像装置の一
実施例における画素列及び転送部の走査方向の拡大断面
図。FIG. 2 is an enlarged cross-sectional view in the scanning direction of a pixel column and a transfer unit in the embodiment of the solid-state imaging device according to the present invention shown in FIG.
【図３】図２に記載の本発明にかかる固体撮像装置の一
実施例における画素列及び転送部の走査方向の拡大断面
に対応した電位分布図。FIG. 3 is a potential distribution diagram corresponding to an enlarged cross section in the scanning direction of a pixel column and a transfer unit in the embodiment of the solid-state imaging device according to the present invention shown in FIG.
【図４】図２に記載の本発明にかかる固体撮像装置の一
実施例における画素列間の電極に印加されるパルスタイ
ミング図。FIG. 4 is a timing chart of pulses applied to electrodes between pixel columns in the embodiment of the solid-state imaging device according to the present invention shown in FIG.
【図５】本発明にかかる固体撮像装置の他の実施例にお
ける走査方向の断面図。FIG. 5 is a cross-sectional view in the scanning direction of another embodiment of the solid-state imaging device according to the present invention.
【図６】図５に記載の本発明にかかる固体撮像装置の他
の実施例の断面部分における電位分布図。FIG. 6 is a potential distribution diagram in a cross-sectional portion of another embodiment of the solid-state imaging device according to the present invention shown in FIG.
【図７】図５に記載の本発明にかかる固体撮像装置の他
の実施例におけるパルスタイミング図。FIG. 7 is a pulse timing chart in another embodiment of the solid-state imaging device according to the present invention shown in FIG.
【図８】従来技術にかかるＴＤＩ方式の固体撮像装置を
示す平面図。FIG. 8 is a plan view showing a TDI type solid-state imaging device according to a conventional technique.
【図９】図８に記載の従来技術にかかるＴＤＩ方式の固
体撮像装置における走査方向の断面図。9 is a cross-sectional view in the scanning direction of the TDI type solid-state imaging device according to the related art shown in FIG.
【図１０】図９に記載の従来技術にかかるＴＤＩ方式の
固体撮像装置における走査方向の断面に対応した電位分
布図。10 is a potential distribution diagram corresponding to a cross section in the scanning direction in the TDI type solid-state imaging device according to the conventional technique shown in FIG.
【図１１】図９に記載の従来技術にかかるＴＤＩ方式の
固体撮像装置の転送電極９３に印加されるパルス電圧を
示す図。11 is a diagram showing a pulse voltage applied to a transfer electrode 93 of the TDI type solid-state imaging device according to the conventional technique shown in FIG.
１−１、１−２、…、１−（ｎ−１）、１−ｎ 画素列 １ａ 画素 ２−１、２−２、…、２−（ｎ−１） 蓄積部 ３−１、３−２、…、３−（ｎ−１） 転送電極 ４ 信号電荷転送部 ５ ＣＣＤレジスタ ６ 出力部 ２１−１、２１−２ 画素 ２２−１、２２−２ 蓄積部の電極 ２３−１、２３−２ 転送電極 ５１−１、５１−２ 画素 ５２−１、５２−２ 蓄積部の電極 ５３−１、５３−２ 転送電極 ８１ 画素列 ８１ａ 画素 （１、１）、（１、２）、（１、３）、（１、４）、
…、…、（１、ｎ−１）、（１、ｎ） 画素 ８３ 転送電極 ８８ 信号電荷転送部 ８５ ＣＣＤレジスタ ８６ 出力部 ９１−１、９１−２ 画素 ９３−１、９３−２ 転送部 ９１ａ 画素部のバリア部長 ９１ｂ 画素部の蓄積部長 ９３ａ 転送電極のバリア部長 ９３ｂ 転送電極の蓄積部長1-1, 1-2, ..., 1- (n-1), 1-n Pixel column 1a Pixels 2-1, 2-2, ..., 2- (n-1) Accumulation unit 3-1, 3- 2, ..., 3- (n-1) transfer electrode 4 signal charge transfer unit 5 CCD register 6 output unit 21-1, 21-2 pixel 22-1, 22-2 storage unit electrode 23-1, 23-2 Transfer electrodes 51-1 and 51-2 Pixels 52-1 and 52-2 Storage unit electrodes 53-1 and 53-2 Transfer electrodes 81 Pixel column 81a Pixels (1, 1), (1, 2), (1, 3), (1, 4),
..., (1, n-1), (1, n) pixel 83 transfer electrode 88 signal charge transfer section 85 CCD register 86 output section 91-1 and 91-2 pixel 93-1 and 93-2 transfer section 91a Barrier section length of pixel section 91b Storage section length of pixel section 93a Barrier section length of transfer electrode 93b Transfer electrode storage section length of 93b
Claims (1)
数の感光画素からなる複数の画素列と、各画素列間に設
けられ所定の画素列に蓄積又は発生した電荷を隣接した
画素列へ転送する転送部とを備え、走査方向が前記画素
列と直交する方向である固体撮像装置において、前記画
素列間のピッチが走査ピッチのＮ倍（Ｎは整数、２≦
Ｎ、以下同様）であり、かつ前記転送部は、信号電荷を
一時保持する蓄積部を併設した転送電極をそれぞれ（Ｎ
−１）組有することを特徴とする固体撮像装置。1. A plurality of pixel columns composed of a plurality of photosensitive pixels arranged one-dimensionally for photoelectric conversion, and adjacent pixel columns provided with electric charges accumulated or generated in a predetermined pixel column provided between the pixel columns. In a solid-state imaging device having a transfer unit for transferring to a pixel array, the pitch between the pixel rows is N times the scanning pitch (N is an integer, 2 ≦
N, the same applies to the following), and the transfer unit has transfer electrodes provided with storage units for temporarily holding signal charges (N
-1) A solid-state imaging device having a set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14961294A JP3474638B2 (en) | 1994-06-30 | 1994-06-30 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14961294A JP3474638B2 (en) | 1994-06-30 | 1994-06-30 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0818867A true JPH0818867A (en) | 1996-01-19 |
| JP3474638B2 JP3474638B2 (en) | 2003-12-08 |
Family
ID=15479019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14961294A Expired - Fee Related JP3474638B2 (en) | 1994-06-30 | 1994-06-30 | Solid-state imaging device |
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| Country | Link |
|---|---|
| JP (1) | JP3474638B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011142082A1 (en) | 2010-05-13 | 2011-11-17 | コニカミノルタビジネステクノロジーズ株式会社 | Solid-state image pickup device, image pickup device, and driving method |
| JP2013531879A (en) * | 2010-05-18 | 2013-08-08 | ウードゥヴェ セミコンダクターズ | Asymmetric gate matrix charge transfer image sensor |
| JP2015090906A (en) * | 2013-11-05 | 2015-05-11 | 浜松ホトニクス株式会社 | Charge-coupled device, method for manufacturing the same, and solid-state image pickup device |
| JP2015524159A (en) * | 2012-05-03 | 2015-08-20 | イー・２・ブイ・セミコンダクターズ | Matrix image sensor with bi-directional charge transfer with asymmetric gate |
-
1994
- 1994-06-30 JP JP14961294A patent/JP3474638B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011142082A1 (en) | 2010-05-13 | 2011-11-17 | コニカミノルタビジネステクノロジーズ株式会社 | Solid-state image pickup device, image pickup device, and driving method |
| US9024242B2 (en) | 2010-05-13 | 2015-05-05 | Konica Minolta Business Technologies, Inc. | Solid-state image pickup device, image pickup apparatus, and driving method |
| JP2013531879A (en) * | 2010-05-18 | 2013-08-08 | ウードゥヴェ セミコンダクターズ | Asymmetric gate matrix charge transfer image sensor |
| JP2015524159A (en) * | 2012-05-03 | 2015-08-20 | イー・２・ブイ・セミコンダクターズ | Matrix image sensor with bi-directional charge transfer with asymmetric gate |
| JP2015090906A (en) * | 2013-11-05 | 2015-05-11 | 浜松ホトニクス株式会社 | Charge-coupled device, method for manufacturing the same, and solid-state image pickup device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3474638B2 (en) | 2003-12-08 |
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