JPH08158045A - Crucible temperature control method for vacuum deposition apparatus - Google Patents

Abstract

(57) [Summary] [Object] To provide a crucible temperature control method for a vacuum vapor deposition apparatus capable of making the density distribution on a steel sheet substantially uniform in the width direction. [Structure] A thin plate-shaped traveling substrate 1 that continuously travels, an electron gun 3 that emits an electron beam 2, a crucible 4 that contains a vapor deposition material, and a vacuum chamber 6 that contains the traveling substrate and the crucible and is evacuated. And so that the number of vaporized atoms at the widthwise end of the crucible is about 7 times or more and about 35 times or less that of the central portion, the vapor deposition material at the widthwise end of the crucible is moved from the central portion by an electron gun. Heat to high temperature to evaporate.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crucible temperature control method for a vacuum vapor deposition apparatus, and more particularly to a temperature control method for a vapor deposition material for irradiating and heating an electron beam in a vacuum vapor deposition apparatus.

[0002]

2. Description of the Related Art Vacuum vapor deposition
Is a film forming process in which a metal is heated and evaporated in a vacuum, and the evaporated metal is solidified on the surface of a substrate (material to be processed) to form a film. In the film forming process, a continuous vacuum vapor deposition apparatus has been known which deposits metal on a thin plate-like continuous traveling substrate by using an electron beam to heat the metal for vapor deposition. This continuous vacuum vapor deposition apparatus has advantages that it can vapor deposit nitrides, carbides, oxides, etc., which cannot be handled by ordinary wet plating, and has a high deposition rate.

Such a conventional vacuum vapor deposition apparatus is shown in FIG.
As shown in FIG.
An electron gun 53 that emits an electron beam 52; a crucible 55 that contains a melted vapor deposition metal 54 (vapor deposition material);
Equipped with a traveling substrate and a crucible and a vacuum chamber 56 that has been evacuated, the electron gun 52 emits an electron beam 52, and a magnetic field (not shown) bends the direction of the electron beam 52 to heat and evaporate the metal in the crucible 55. Then, the evaporated metal is solidified on the surface of the traveling substrate 51 to form a film.

[0004]

In the above-described vacuum vapor deposition apparatus, in order to vapor deposit the metal 54 on the wide traveling substrate 51 as uniformly as possible, it is necessary to heat the metal surface in the crucible 55 to a temperature as uniform as possible. It has been considered that there are various methods, and various methods have been proposed (for example, “Electron beam irradiation method of vacuum deposition apparatus” by the inventors of the present application, filed on June 24, 1994, Japanese Patent Application No. 6-142801). .

However, even if the metal in the crucible has a uniform temperature in the width direction, the inventors of the present application found that the density distribution in the steel sheet (traveling substrate) was small at the end due to the relationship of the density distribution in the deposition chamber. It was found that a uniform film thickness could not be obtained in the width direction of the steel sheet.

The present invention was devised to solve such a new problem. That is, an object of the present invention is to provide a crucible temperature control method for a vacuum vapor deposition apparatus, which can make the density distribution on the steel sheet substantially uniform in the width direction.

[0007]

According to the present invention, a thin plate-shaped traveling substrate that continuously travels, an electron gun that emits an electron beam, a crucible that contains a vapor deposition material, a traveling substrate and a crucible are built-in. And a vacuum chamber that has been evacuated, so that the number of vaporized atoms at the end of the crucible in the width direction is about 7 times or more and about 35 times or less that of the central part by the electron gun. A method for controlling the temperature of a crucible for a vacuum vapor deposition apparatus is provided, wherein the vapor deposition material is heated to a temperature higher than that of the central portion to evaporate.

According to a preferred embodiment of the present invention, the number of vaporized atoms at the ends is about 17 times that at the center. The vapor deposition material is aluminum, the temperature in the widthwise central portion of the vapor deposition material is approximately 1000 ° C., and the temperature in the widthwise end portion is approximately 1100 ° C. or higher and approximately 1200 ° C. or lower. The temperature of the widthwise end portion is preferably about 1150 ° C.

Further, the crucible has a plurality of partition plates for suppressing heat conduction and convection in the width direction. It is preferable that the molten metal surface area of the vapor deposition material at the widthwise end portion of the crucible is configured to be wider than that at the central portion.

[0010]

According to the analysis by the present inventors, by heating the end portions in the width direction of the crucible to a temperature higher than the central portion to evaporate,
It was found that the vaporized atoms move substantially uniformly in the width direction of the steel plate (traveling substrate), and the density distribution on the steel plate can be made substantially uniform in the width direction. That is, by the above-described method of the present invention, the number of vaporized atoms at the widthwise end of the crucible is adjusted to about 7 times or more and about 35 times or less that of the central portion by the electron gun. By heating the vapor deposition material to a temperature higher than that of the central part and evaporating it, the vaporized atoms can be moved almost uniformly in the width direction of the steel plate (running substrate), and the density distribution on the steel plate can be made almost uniform in the width direction. As a result, a uniform film thickness can be obtained in the width direction of the steel sheet.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings. In addition, in each figure, the same parts are denoted by the same reference numerals. FIG. 1 is a configuration diagram of a vacuum vapor deposition apparatus to which the method according to the present invention is applied. In this figure, a vacuum vapor deposition apparatus 10 includes a thin plate-shaped traveling substrate 1 that continuously travels, an electron gun 3 that emits an electron beam 2, a crucible 5 that contains a vapor deposition material 4, a traveling substrate 1 and a crucible. It is provided with a vacuum chamber 6 which is built in and evacuated, and the vapor deposition material 4 is vaporized by the electron gun 3 to be vapor deposited on the traveling substrate. Such a configuration is similar to that of the conventional vacuum vapor deposition apparatus shown in FIG.

FIG. 2 is a diagram showing the temperature distribution in the crucible width direction according to the method of the present invention. In this figure, the left end of the abscissa indicates the center of the crucible, the right end of the abscissa indicates the end of the crucible, and the ordinate indicates the temperature of the vapor deposition material 4 in the crucible 5. In this figure, Case 1 is the temperature distribution according to the present invention,
Case 2 (Case 2) is uniform if Case 3 (Case 2)
3) shows the case where the edge temperature is too high. Case 3
Are the same as Case 1 except for the end temperature. In the following analysis, a two-dimensional cross section in the vacuum chamber 6 in the width direction was considered, and the center was made symmetrical in the width direction. The height of the vapor deposition chamber is 450 mm, the width of the vapor deposition chamber is 1400 mm, and the width of the crucible is 80 mm.
0 mm, steel plate width is 600 mm, the central symmetry plane is treated as specular reflection, and the attachment coefficient is 1 (10
0% adhesion).

In FIG. 2, the vapor deposition material 4 is aluminum (atomic weight: 26.98 Kg / Kmol), and in the case 1 according to the present invention, the temperature of the central portion of the vapor deposition material 4 in the width direction is set to 1
The temperature of the end portion in the width direction was set to 000 ° C and 1150 ° C.
In the case 2, the temperature was 1100 ° C. as a whole, and in the case 3, the temperature in the widthwise central portion was 1000 ° C. and the temperature in the widthwise end portion was 1200 ° C.

The saturated vapor pressure of the vapor deposition material is determined from the saturation temperature of the vapor deposition material, and the number of vaporized atoms can be calculated from the saturation temperature and the saturated vapor pressure by Equation 1.

[0015]

[Equation 1]

Table 1 shows the saturated vapor pressure and the number of vaporized atoms corresponding to the temperature distribution shown in FIG. As shown in this table, in the case 1 according to the present invention, the temperature at the center in the width direction is 1000.
The number of vaporized atoms corresponding to ℃ is 1.1 × 10 ²¹ co / m ² sec, and the number of vaporized atoms corresponding to the widthwise end temperature of 1150 ° C. is 19 × 10 ²¹ co / m ² sec. . Therefore, Case 1
In this case, the number of vaporized atoms at the widthwise end of the crucible is about 17 times that at the center. Similarly, in case 3, the number of vaporized atoms at the widthwise end of the crucible is about 35 times that at the center.

[0017]

[Table 1]

FIG. 3 is a simulation result showing the moving position of particles corresponding to the temperature distribution of FIG. 2 in a substantially steady state (after 0.68 msec from the start of evaporation). As shown in this figure, in the case 1 according to the present invention, the amount of evaporation from the end of the crucible is large, but the particles are almost uniformly distributed in the width direction at the position of the steel plate. On the other hand, in case 2, the amount of evaporation from the crucible is almost uniform in the width direction, but at the position of the steel plate, the particle distribution at the end is rough, and in case 3, the position of the steel plate is large. It can be seen that the particles at the edges are denser than at the center.

FIG. 4 is a simulation result of the density distribution corresponding to the temperature distribution of FIG. 2, and the curves in the drawing show the contour lines of the density. As shown in this figure, in the case 1 according to the present invention, the density of the steel sheet position is substantially constant in the width direction, whereas in case 2 the end portion is thin and in case 3 the middle portion is thick. I understand.

FIG. 5 is a diagram showing the density ratio on the surface of the steel sheet corresponding to the temperature distribution of FIG. As shown in this figure, in Case 1, a nearly uniform density distribution (within ± 5%) is obtained in the width direction, whereas in Case 2, the end portion is thinned by 10% or more, and in Case 3, the intermediate portion is thinned. It was found that there was a dark portion of 40% or more. In case 1, when the temperature in the widthwise end portion is set to 1100 ° C., the density distribution in FIG. 5 is at an intermediate position between case 1 and case 2, and is substantially uniform (±) in the widthwise direction as in case 1. It was possible to obtain a density distribution within 10%). In this case, the number of vaporized atoms at the end is 7.5 × 10 ²¹ co / m ² sec, and the number of vaporized atoms at the widthwise end of the crucible is about 7 times that at the center.

As described above, according to the method of the present invention, the width of the crucible is adjusted by the electron gun so that the number of vaporized atoms at the widthwise end of the crucible is about 7 times or more and about 35 times or less that of the central part. By heating the vapor deposition material at the end of the direction to a temperature higher than that of the center to evaporate it, evaporated atoms are moved almost uniformly in the width direction of the steel plate (running substrate), and the density distribution on the steel plate is made almost uniform in the width direction. It is possible to obtain a uniform film thickness in the width direction of the steel sheet.

FIG. 6 illustrates a crucible 5 for carrying out the method of the present invention.
FIG. 3A is a plan view of FIG. As shown in this figure, the crucible 5 has a plurality of partition plates 5a, by which heat conduction and convection in the width direction can be suppressed, and the temperature distribution shown in FIG. 2 can be secured. In addition, FIG.
As shown in (A), the partition plate 5a does not completely partition the crucible 5, and at least one end thereof is spaced from the inner wall of the crucible, so that a portion where evaporation is intense evaporates in a width direction from a portion where evaporation is small. The material is flowing.
Further, the partition plate 5a is movable in the longitudinal direction of the crucible, which makes it possible to adjust the film distribution on the steel plate. Further, it is preferable to appropriately change the thickness of the partition plate so as to adjust the evaporation area and form a uniform film.

FIG. 7 shows another embodiment of the crucible 5,
(A) is a plan view and (B) is a cross-sectional view in the width direction. As shown in this figure, the molten metal surface area of the vapor deposition material at the widthwise end portion of the crucible is preferably configured to be wider than the central portion, whereby the number of vaporized atoms shown in Table 1 is maintained,
The temperature distribution shown in FIG. 2 can be changed to a more uniform temperature distribution.

In the above-mentioned embodiment, the vapor deposition material was aluminum, and the analysis was performed under specific calculation conditions. However, even when the vapor deposition material other than aluminum is applied, it is grasped from the motion of atoms and analyzed. The method can be applied. Therefore, the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications can be made without departing from the gist of the present invention.

[0025]

As described above, the method for controlling the temperature of the crucible of the vacuum vapor deposition apparatus according to the present invention uses the electron gun to heat the vapor deposition material at the widthwise end of the crucible to a temperature higher than that of the central portion of the crucible to evaporate the steel sheet. It has an excellent effect that the upper density distribution can be made substantially uniform in the width direction.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a vacuum vapor deposition apparatus to which a method according to the present invention is applied.

FIG. 2 is a diagram showing a temperature distribution in a crucible width direction according to the method of the present invention.

FIG. 3 is a simulation result showing a moving position in a steady state corresponding to the temperature distribution of FIG.

FIG. 4 is a simulation result of a density distribution corresponding to the temperature distribution of FIG.

5 is a diagram showing the density ratio on the surface of the steel sheet corresponding to the temperature distribution of FIG.

FIG. 6 is a diagram showing a first embodiment of a crucible for carrying out the method of the present invention.

FIG. 7 is a diagram showing a second embodiment of the crucible for carrying out the method of the present invention.

FIG. 8 is an overall configuration diagram of a conventional vacuum vapor deposition device.

[Explanation of symbols]

 1 Traveling Substrate 2 Electron Beam 3 Electron Gun 4 Vapor Deposition Material 5 Crucible 5a Partition Plate 6 Vacuum Chamber 10 Vacuum Vapor Deposition Device 51 Traveling Substrate 52 Electron Beam 53 Electron Gun 54 Vapor Deposition Material 55 Crucible 56 Vacuum Chamber

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshiyasu Matsuda No. 1 Shin-Nakahara-cho, Isogo-ku, Yokohama-shi, Kanagawa Ishi Kawashima Harima Heavy Industries, Ltd. Yokohama Engineering Center (72) Kunio Matsui Isogo, Yokohama-shi, Kanagawa Shin-Nakahara-cho 1-Ku Ishikawajima Harima Heavy Industries Ltd. Technical Research Institute

Claims (6)

[Claims] 1. A thin plate-shaped traveling substrate that continuously travels,
It is equipped with an electron gun that emits an electron beam, a crucible that contains a vapor deposition material, and a vacuum chamber that contains a traveling substrate and a crucible and that has been evacuated to a vacuum. A crucible temperature control for a vacuum vapor deposition apparatus, characterized in that a vapor deposition material at an end portion in a width direction of a crucible is heated to a temperature higher than a central portion by an electron gun so as to be about 7 times or more and about 35 times or less. Method. 2. The number of vaporized atoms at the end portion is about 17 in the central portion.
The method for controlling the temperature of a crucible for a vacuum vapor deposition apparatus according to claim 1, wherein the temperature is doubled. 3. The vapor deposition material is aluminum, the temperature in the widthwise central portion of the vapor deposition material is about 1000 ° C., and the temperature at the widthwise end portion is about 1100 ° C. or higher and about 120 ° C.
It is 0 degreeC or less, The crucible temperature control method of the vacuum evaporation system of Claim 1 characterized by the above-mentioned. 4. The temperature of the widthwise end portion is about 1150 ° C.
The crucible temperature control method for a vacuum vapor deposition apparatus according to claim 3, wherein 5. The crucible temperature control method for a vacuum vapor deposition apparatus according to claim 1, wherein the crucible has a plurality of partition plates for suppressing heat conduction and convection in the width direction. 6. The crucible temperature control method for a vacuum vapor deposition apparatus according to claim 1, wherein the molten metal surface area of the end portion in the width direction of the crucible is configured to be wider than the central portion.