JPH08153741A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH08153741A JPH08153741A JP6295233A JP29523394A JPH08153741A JP H08153741 A JPH08153741 A JP H08153741A JP 6295233 A JP6295233 A JP 6295233A JP 29523394 A JP29523394 A JP 29523394A JP H08153741 A JPH08153741 A JP H08153741A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- substrate
- chip
- wiring board
- auxiliary plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体装置およびその
製造方法に係り、特に片面樹脂封止型パッケージ構造を
有する半導体装置およびチップ封止用樹脂層の形成方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a semiconductor device having a single-sided resin-sealed package structure and a method for forming a resin layer for chip sealing.
【0002】[0002]
【従来の技術】例えば集積回路カード、ゲーム用マスク
ROMカード、小型携帯電話器などに使用される半導体
装置は、パッケージの小型化・薄型化に対する要求が特
に強い。このような要求に応じるべく、ベア状態の半導
体チップ(ベア・チップ)の実装技術が発展しており、
チップ・オン・ボード(COB)実装、フリップチップ
実装などが知られている。2. Description of the Related Art For semiconductor devices used in, for example, integrated circuit cards, mask ROM cards for games, small mobile phones, etc., there is a strong demand for miniaturization and thinning of packages. In order to meet such demands, mounting technology of bare semiconductor chips (bare chips) has been developed,
Chip-on-board (COB) mounting, flip-chip mounting, etc. are known.
【0003】上記フリップチップ実装は、ベア・チップ
の素子形成面の金属バンプ電極を配線基板上の一主面に
形成されている電極パッドに押し付けて接続(フリップ
チップボンディング)するものである。これは、ワイヤ
ーボンディングを必要とするCOB実装よりも実装密度
が優れているが、基板の熱膨脹などに起因する応力が基
板・チップの接続部に加わって接続の信頼性を損なうと
いう問題がある。In the flip chip mounting, the metal bump electrodes on the element forming surface of the bare chip are pressed against the electrode pads formed on one main surface of the wiring board to connect (flip chip bonding). This has a higher mounting density than the COB mounting which requires wire bonding, but has a problem that stress due to thermal expansion of the substrate is applied to the connecting portion between the substrate and the chip to impair the reliability of the connection.
【0004】上記フリップチップ実装の改良例として、
ベア・チップと基板との間に樹脂を介在させて基板・チ
ップ相互を機械的に固定した片面樹脂封止型パッケージ
構造が例えば特公平2−7180号などにより知られて
いる。As an improved example of the flip chip mounting,
A single-sided resin-sealed package structure in which a resin is interposed between a bare chip and a substrate to mechanically fix the substrate and the chip together is known, for example, from Japanese Patent Publication No. 2-7180.
【0005】さらに、上記片面樹脂封止型パッケージ構
造の改良例およびその製造方法として、本願出願人の出
願に係る特願平6−32296号、特願平6−5075
7号、特願平6−60493号などにより種々の提案が
なされている。Further, as an improved example of the single-sided resin-encapsulated package structure and a manufacturing method thereof, Japanese Patent Application Nos. Hei 6-32296 and Hei 6-5075, filed by the applicant of the present application, are disclosed.
Various proposals have been made in Japanese Patent No. 7 and Japanese Patent Application No. 6-60493.
【0006】図5は、上記提案に係る特願平6−507
57号に開示されている片面樹脂封止型パッケージ構造
の一例を示している。このパッケージ構造は、一主面に
被接続部(例えば接続パッド1b)を含む配線1aを有
する配線基板1と、上記基板の一主面にフェースダウン
型に実装された半導体チップ2と、上記チップと配線基
板との間に充填された樹脂層5と、前記基板の他の主面
側に導出・露出され、前記チップに電気的に接続された
外部接続用端子4とを具備する。なお、図5中、2aは
バンプ電極、3はスルーホール配線である。[0006] FIG. 5 is a Japanese Patent Application No. 6-507 related to the above proposal.
57 shows an example of a single-sided resin-sealed package structure disclosed in No. 57. This package structure has a wiring board 1 having a wiring 1a including a connected portion (for example, a connection pad 1b) on one main surface, a semiconductor chip 2 mounted face down on the one main surface of the board, and the chip described above. And a wiring layer, and a resin layer 5 filled between the wiring board and the wiring board, and an external connection terminal 4 which is led out and exposed on the other main surface side of the board and electrically connected to the chip. In FIG. 5, 2a is a bump electrode and 3 is a through hole wiring.
【0007】図6は、前記提案に係る特願平6−604
93号に開示されている片面樹脂封止型パッケージ構造
の一例を示している。このパッケージ構造は、図5のパ
ッケージ構造の改良例であり、前記基板1の一主面に対
してほぼ同一平面(平面性が±10μm程度)を成すよ
うに前記配線1aを埋め込み形成している。なお、図6
において、図5中と同一部分には同一符号を付してい
る。FIG. 6 shows a Japanese Patent Application No. 6-604 relating to the above proposal.
An example of a single-sided resin-sealed package structure disclosed in No. 93 is shown. This package structure is an improved example of the package structure shown in FIG. 5, and the wiring 1a is formed by embedding so as to form substantially the same plane (planarity is about ± 10 μm) with respect to one main surface of the substrate 1. . Note that FIG.
5, the same parts as those in FIG. 5 are designated by the same reference numerals.
【0008】このパッケージ構造によれば、チップ・基
板間に対して毛細管現象を利用して樹脂を流し込む際、
チップ・基板間の平坦性がよく、樹脂が容易に流れ込む
ので、ボイドのない緻密な樹脂層を形成でき、チップ・
基板間固定の信頼性を高めることができる。According to this package structure, when the resin is poured between the chip and the substrate by utilizing the capillary phenomenon,
The flatness between the chip and substrate is good, and the resin easily flows in, so a dense resin layer without voids can be formed.
The reliability of fixation between substrates can be improved.
【0009】なお、図5、図6中の樹脂層5の形成に際
しては、図7に示すように、樹脂供給装置(ディスペン
サ)のノズル(ニードル)71から樹脂5aを基板1上
の一辺部に供給し、いわゆる毛細管現象を利用してチッ
プ・基板間に樹脂を流し込んで充填した後に硬化させ
る。なお、チップ2の露出している上面は、緻密、堅牢
な素材(例えばシリコン)からなり、樹脂封止を行わな
くても信頼性上の問題は少ない。When forming the resin layer 5 in FIGS. 5 and 6, as shown in FIG. 7, the resin 5a is applied to one side of the substrate 1 from the nozzle (needle) 71 of the resin supply device (dispenser). The resin is supplied and the resin is poured between the chip and the substrate by utilizing the so-called capillary phenomenon to fill the resin and then cured. The exposed upper surface of the chip 2 is made of a dense and robust material (for example, silicon), and there is little problem in reliability without resin sealing.
【0010】また、上記したような提案に係るパッケー
ジ構造を有する半導体装置は、樹脂封止後に温度ストレ
スおよび/または電界ストレスを印加するためのバーン
インテストを実施し得るので、樹脂封止を行わないフリ
ップチップ実装よりも優れている。In the semiconductor device having the package structure according to the above proposal, since the burn-in test for applying the temperature stress and / or the electric field stress can be performed after the resin sealing, the resin sealing is not performed. Better than flip chip mounting.
【0011】ところで、前記したような樹脂充填方法で
は、図7に示すように、基板上の樹脂供給側とは反対側
の一辺部にはみ出した樹脂(その表面形状をフィレット
と称する。)のはみ出し量(約0.25mm)S1より
も、基板上の樹脂供給側の一辺部における樹脂のはみ出
し量S2の方がはるかに大きい。因みに、樹脂供給側の
一辺部におけるはみ出し量は、チップ・基板間の容積を
基準にして樹脂供給量が2倍の場合に最大0.83m
m、3倍の場合に最大1.15mm、4倍の場合に最大
2.12mmであった。By the way, in the resin filling method as described above, as shown in FIG. 7, the resin (the surface shape of which is called a fillet) is extruded on one side of the substrate opposite to the resin supply side. The resin protrusion amount S2 at one side of the substrate on the resin supply side is much larger than the amount (about 0.25 mm) S1. By the way, the protrusion amount on one side of the resin supply side is 0.83m at maximum when the resin supply amount is twice as large as the volume between the chip and the substrate.
m was 3.15 times, the maximum was 1.15 mm, and 4 times was the maximum 2.12 mm.
【0012】また、樹脂供給側とは反対側の一辺部にお
いては、樹脂のはみ出し量S1は樹脂の物性でほぼ決ま
るが、樹脂供給側の一辺部においては、チップに触れな
いようにニードル71を接近させて樹脂を供給するの
で、樹脂のはみ出し量S2はニードルのサイズ(現在使
用している標準型のものは外径0.82mm、1.25
mmなど)より大きくなる。On the side opposite to the resin supply side, the resin protrusion amount S1 is substantially determined by the physical properties of the resin, but on the side of the resin supply side, the needle 71 is placed so as not to touch the tip. Since the resin is supplied in close proximity, the amount of resin squeeze out S2 is the size of the needle (the standard type currently used is 0.82 mm in outer diameter, 1.25 mm
mm).
【0013】また、前記したような樹脂充填方法では、
チップ外縁・基板外縁間の距離(樹脂の供給スペース)
S3を小さくしようとする場合、ニードル71の外径に
より制約され、ニードルの外径を小さくしようとする
と、樹脂を基板上のチップ側方部に正常に供給すること
が困難になる。つまり、ニードルから吐き出した樹脂が
チップ上面に乗り上げたり基板端面から垂れ下がったり
してパッケージの仕上がり寸法のばらつきや外観上の不
具合が生じるおそれがあるので、現在使用しているニー
ドルをそのまま使用することは不可能になる。Further, in the resin filling method as described above,
Distance between chip outer edge and substrate outer edge (resin supply space)
When trying to reduce S3, it is restricted by the outer diameter of the needle 71, and when trying to reduce the outer diameter of the needle 71, it becomes difficult to normally supply the resin to the side portion of the chip on the substrate. In other words, the resin discharged from the needle may run onto the top surface of the chip or hang down from the board end surface, resulting in variations in the finished dimensions of the package and appearance problems. It will be impossible.
【0014】この対策として、前記樹脂の供給スペース
よりニードルの外径を小さく実現することが可能な場合
にニードルの外径を小さくすると、現在使用しているニ
ードル内径(0.6〜0.7mm)も小さくする必要が
あるので、粘度の高い樹脂を使用する場合にニードルか
ら吐き出そうとする樹脂の目詰まりが生じ、ニードルか
らの吐き出しが困難になる。また、樹脂の一回の吐き出
し量(供給量)が少なくなり、チップ・基板間を充填す
るのに必要な量の樹脂を確保するためにディスペンサか
らの吐き出し回数を増やす必要が生じ、その制御が困難
になるという問題がある。As a countermeasure against this, if the outer diameter of the needle can be made smaller than the space for supplying the resin, if the outer diameter of the needle is made smaller, the inner diameter of the needle currently used (0.6 to 0.7 mm). ) Also needs to be small, and when a resin having a high viscosity is used, the resin that is about to be discharged from the needle is clogged, which makes it difficult to discharge from the needle. In addition, the amount of resin discharged at one time (supply amount) is reduced, and it is necessary to increase the number of times the resin is discharged from the dispenser in order to secure the amount of resin required to fill the space between the chip and the substrate. There is a problem that it becomes difficult.
【0015】一方、片面樹脂封止型パッケージ構造の一
層の小型化が要求され、チップとチップサイズに近い基
板とをフリップチップボンディングした後の状態で基板
の各辺部においてチップ外縁・基板外縁間の距離S3を
例えば1mm〜0.5mm以下にすることが要求されて
きているが、前記したような樹脂充填方法では、上記要
求に対応しきれない。On the other hand, further miniaturization of the single-sided resin-sealed package structure is required, and after flip chip bonding a chip and a substrate having a chip size close to each other, between the chip outer edge and the substrate outer edge on each side of the substrate. The distance S3 has been required to be, for example, 1 mm to 0.5 mm or less, but the above resin filling method cannot meet the above requirement.
【0016】[0016]
【発明が解決しようとする課題】上記したように従来の
提案に係る片面樹脂封止型パッケージ構造を有する半導
体装置を製造する際のチップ・基板間に対する樹脂充填
方法は、チップ外縁・基板外縁間の距離が微小になる
と、パッケージの仕上がり寸法のばらつきや外観上の不
具合が生じるおそれがあるという問題があった。As described above, the method of filling the resin between the chip and the substrate when manufacturing the semiconductor device having the single-sided resin-sealed package structure according to the conventional proposal is as follows. If the distance is small, there is a problem that variations in the finished dimensions of the package and defects in appearance may occur.
【0017】本発明は上記の問題点を解決すべくなされ
たもので、片面樹脂封止型パッケージ構造を有する半導
体装置を製造するためにチップ・基板間に対して樹脂を
充填する際、チップ外縁・基板外縁間の距離が微小の場
合でも、従来と同様のディスペンサと使用樹脂の性質に
見合った口径を有するニードルを使用でき、パッケージ
の仕上がり寸法のばらつきや外観上の不具合の発生をニ
ードルの口径に関係なく抑止でき、片面樹脂封止型パッ
ケージ構造の一層の小型化を図り得る半導体装置の製造
方法を提供することを目的とする。The present invention has been made to solve the above problems, and when a resin is filled between a chip and a substrate to manufacture a semiconductor device having a single-sided resin-sealed package structure, the outer edge of the chip is sealed.・ Even when the distance between the outer edges of the substrate is small, the same dispenser and needle with a diameter that matches the properties of the resin used can be used, resulting in variations in the finished dimensions of the package and defects in the appearance It is an object of the present invention to provide a method for manufacturing a semiconductor device which can be suppressed regardless of the above, and can further reduce the size of the single-sided resin-sealed package structure.
【0018】[0018]
【課題を解決するための手段】本発明の半導体装置の製
造方法は、一主面に被接続部を含む配線を有し、他主面
に外部接続用端子を導出・露出させた配線基板の被接続
部とこれに対応する半導体チップの電極端子部の位置が
対向するように半導体チップを配置する工程と、上記配
線基板の被接続部とこれに対応する半導体チップの電極
端子部を固定接続する工程と、この後、上記半導体チッ
プと配線基板との間に封止用樹脂を充填する工程と、上
記充填した封止用樹脂を硬化させる工程とを具備し、前
記封止用樹脂を充填する際、樹脂供給補助用の補助板を
使用し、その上面が上記配線基板の一主面にほぼ水平に
なるように上記補助板の端面を上記配線基板の少なくと
も一端面に対して密着状態で当接させる工程と、この
後、上記補助板・配線基板の当接部を含む面上に樹脂を
供給することにより上記樹脂を前記チップ・基板間の開
口部に供給する工程と、この後、前記補助板を前記配線
基板から引き離す工程とを具備することを特徴とする。A method of manufacturing a semiconductor device according to the present invention is directed to a wiring board in which a wiring including a connected portion is provided on one main surface and external connection terminals are led out / exposed on the other main surface. The step of arranging the semiconductor chip so that the position of the connected part and the corresponding electrode terminal part of the semiconductor chip face each other, and the connected part of the wiring board and the electrode terminal part of the corresponding semiconductor chip are fixedly connected. And a step of subsequently filling a sealing resin between the semiconductor chip and the wiring board, and a step of curing the filled sealing resin, and filling the sealing resin In this case, an auxiliary plate for resin supply is used, and the end face of the auxiliary plate is in close contact with at least one end face of the wiring board so that the upper surface thereof is substantially horizontal to one main surface of the wiring board. The step of abutting, and then the auxiliary plate A step of supplying the resin to the opening between the chip and the board by supplying the resin on the surface including the contact portion of the board; and thereafter, a step of separating the auxiliary plate from the wiring board. It is characterized by
【0019】[0019]
【作用】片面樹脂封止型パッケージ構造を有する半導体
装置を製造する際にチップ・基板間に対して樹脂を充填
する時、樹脂供給補助用の補助板を使用し、その上面が
上記配線基板の一主面にほぼ水平になるように上記補助
板の端面を上記配線基板の少なくとも一端面に対して密
着状態で当接させる。この後、上記補助板・配線基板の
当接部を含む面上に樹脂を供給することにより上記樹脂
を前記チップ・基板間の開口部に供給する。これによ
り、チップ・基板間における樹脂の毛細管現象を利用し
てチップ・基板間に樹脂を流し込んで充填することが可
能になる。上記樹脂を供給する際、樹脂が前記チップの
側面に付着するように供給することにより、樹脂の毛細
管現象が直ちに始まるようにすることが望ましい。この
後、前記前記補助板を前記配線基板から引き離す。When a semiconductor device having a single-sided resin-sealed package structure is manufactured, when a resin is filled between the chip and the substrate, an auxiliary plate for assisting the resin supply is used, and the upper surface of the auxiliary plate is the wiring board. The end surface of the auxiliary plate is brought into close contact with at least one end surface of the wiring board so as to be substantially horizontal to the one main surface. After that, the resin is supplied to the surface including the abutting portion of the auxiliary plate / wiring substrate to supply the resin to the opening between the chip and the substrate. As a result, the resin can be poured and filled between the chip and the substrate by utilizing the capillary phenomenon of the resin between the chip and the substrate. When the resin is supplied, it is desirable that the resin is supplied so as to adhere to the side surface of the chip so that the capillary action of the resin immediately starts. Then, the auxiliary plate is separated from the wiring board.
【0020】このような方法によれば、チップ外縁・基
板外縁間の距離が微小の場合でも、従来と同様のディス
ペンサと使用樹脂の性質に見合った口径を有するニード
ルを使用でき、ニードルの口径に関係なくチップ・基板
間に対してほぼ一定量の樹脂を安定・確実に供給でき、
樹脂がチップ上面に乗り上げたり樹脂が基板端面から垂
れ下がりすることがなく、パッケージの仕上がり寸法の
ばらつきや外観上の不具合の発生を抑止することが可能
になる。According to such a method, even when the distance between the outer edge of the chip and the outer edge of the substrate is small, a dispenser similar to the conventional one and a needle having a diameter suitable for the properties of the resin used can be used. Regardless of the reason, it is possible to stably and reliably supply an almost constant amount of resin between the chip and substrate,
The resin does not run onto the upper surface of the chip and the resin does not hang down from the end surface of the substrate, which makes it possible to prevent variations in the finished dimensions of the package and occurrence of defects in the appearance.
【0021】[0021]
【実施例】以下、図面を参照して本発明の実施例を詳細
に説明する。図1(a)および(b)は、本発明の一実
施例に係る片面樹脂封止型パッケージ構造を有する半導
体装置の製造工程、特に樹脂封止工程の一例を概略的に
示している。Embodiments of the present invention will be described below in detail with reference to the drawings. FIGS. 1A and 1B schematically show an example of a manufacturing process of a semiconductor device having a single-sided resin-sealed package structure according to an embodiment of the present invention, particularly a resin sealing process.
【0022】図2(a)および(b)は、完成後の半導
体装置を示す斜視図および断面図である。この半導体装
置は、一主面に被接続部1bを含む配線1aを有する配
線基板1と、上記基板の一主面にフェースダウン型に実
装された半導体チップ2と、上記チップと基板との間に
樹脂が充填されて硬化された樹脂層5と、前記基板の他
の主面側に導出・露出され、前記チップに電気的に接続
された外部接続用端子4とを具備する。2A and 2B are a perspective view and a sectional view showing the semiconductor device after completion. This semiconductor device includes a wiring board 1 having a wiring 1a including a connected portion 1b on one main surface, a semiconductor chip 2 mounted face down on the one main surface of the board, and a chip between the chip and the board. A resin layer 5 which is filled with a resin and hardened, and an external connection terminal 4 which is led out / exposed to the other main surface side of the substrate and electrically connected to the chip.
【0023】次に、配線基板1と半導体チップ2とをボ
ンディングするまでの工程の一例を簡単に説明する。上
記チップ2として、素子形成面の外部接続用パッド部上
に導電性物質、例えば金属からなるバンプ電極(例えば
直径100μm、高さ30μm)2aが形成されている
ものを用意する。上記バンプ電極2aは、例えば電気メ
ッキ法により形成された金バンプあるいはボールボンデ
ィング法により形成された金のボールバンプである。Next, an example of steps up to the bonding of the wiring board 1 and the semiconductor chip 2 will be briefly described. As the chip 2, a chip having a bump electrode (for example, a diameter of 100 μm and a height of 30 μm) 2a made of a conductive substance, such as a metal, is prepared on the pad for external connection on the element formation surface. The bump electrodes 2a are, for example, gold bumps formed by electroplating or gold ball bumps formed by ball bonding.
【0024】前記配線基板1として、一主面に被接続部
1bを含む配線1aを有し、上記被接続部1bからスル
ーホール配線3を介して他の主面側に導出・露出され、
例えば格子状に配列された平面型の外部接続用端子4を
具備するものを用意する。The wiring board 1 has a wiring 1a including a connected portion 1b on one main surface, and is led out and exposed from the connected portion 1b to the other main surface side through the through-hole wiring 3.
For example, one having flat type external connection terminals 4 arranged in a grid pattern is prepared.
【0025】本例では、上記基板1は、一主面に対して
ほぼ同一平面(平面性が±10μm程度)を成すように
配線1aが埋め込み形成されている。なお、前記基板1
の一主面に被接続部1bを形成する際には、一主面に配
線1aを有する基板1を例えば真空吸着機構付きのスク
リーン印刷機のステージ上に固定し、基板上1でチップ
の金属バンプ電極2aに対応する部分に平面型の接続パ
ッド(例えば直径150μm、高さ80μm)1bを形
成する。この際、チップのバンプ電極2aに対応する開
口(例えば150μm×150μm)を有するメタルマ
スクを用いて基板の配線形成面上に導電性ペースト、例
えば銀ペースト(銀の粒径1μm、粘度100ps)を
スクリーン印刷して前記接続パッド1bを形成する。In this example, the substrate 1 is formed by embedding the wiring 1a so as to form substantially the same plane (planarity is about ± 10 μm) with respect to one main surface. The substrate 1
When forming the connected portion 1b on one main surface, the substrate 1 having the wiring 1a on one main surface is fixed on, for example, the stage of a screen printing machine with a vacuum suction mechanism, and on the substrate 1 the metal of the chip is attached. A flat type connection pad (for example, diameter 150 μm, height 80 μm) 1b is formed in a portion corresponding to the bump electrode 2a. At this time, a conductive paste, for example, a silver paste (silver particle size 1 μm, viscosity 100 ps) is formed on the wiring formation surface of the substrate using a metal mask having openings (for example, 150 μm × 150 μm) corresponding to the bump electrodes 2a of the chip. The connection pad 1b is formed by screen printing.
【0026】次に、チップ2を真空吸着し得る機構を有
するボンディング装置を用いて基板1上にチップ2をフ
ェースダウン型に実装するためにフリップチップボンデ
ィングを行う。この場合、上記基板の接続パッド1bに
対してチップの対応するバンプ電極2aが対向するよう
に配置し、ボンディングヘッドを押し下げることにより
接続パッドにバンプ電極の少なくとも先端部を埋め込む
ように圧入して両者を固定させ、この状態で前記接続パ
ッド1b用の銀ペーストを熱硬化させることにより両者
を接合する。Next, flip chip bonding is carried out to mount the chip 2 on the substrate 1 in a face-down type by using a bonding apparatus having a mechanism capable of vacuum chucking the chip 2. In this case, the bump electrodes 2a corresponding to the chip are arranged so as to face the connection pads 1b on the substrate, and the bonding head is pressed down to press-fit the connection pads so that at least the tip portions of the bump electrodes are embedded. Are fixed, and in this state, the silver paste for the connection pad 1b is thermally cured to bond them.
【0027】次に、上記したように基板上にチップがフ
リップチップボンディングされた状態において樹脂層5
を形成する。この樹脂層5は、チップと基板との間(本
例では30〜40μm)に充填された部分と、チップの
外周側面部を覆い、チップの各外周側面部にほぼ均等な
フィレットを有する部分とを有する。Next, in the state where the chip is flip-chip bonded on the substrate as described above, the resin layer 5 is formed.
To form. The resin layer 5 includes a portion filled between the chip and the substrate (30 to 40 μm in this example), and a portion that covers the outer peripheral side surface portion of the chip and has a substantially uniform fillet on each outer peripheral side surface portion. Have.
【0028】ところで、基板1のサイズが、例えば縦横
とも15mm、厚さ0.2mmであり、チップ2のサイ
ズは、例えば縦横とも13mm、厚さ0.25mmであ
るとすると、基板1の各辺部においてチップ外縁・基板
外縁間の距離S3が極めて小さく(1mm以下)、基板
1の一辺部の端部上に樹脂を供給する際に、樹脂の供給
スペースが狭いので、樹脂がチップ上面に乗り上げたり
基板端面から垂れ下がることがないように工夫する必要
がある。If the size of the substrate 1 is, for example, 15 mm in length and width and 0.2 mm in thickness, and the size of the chip 2 is, for example, 13 mm in length and width and 0.25 mm in thickness, each side of the substrate 1 is assumed. The distance S3 between the outer edge of the chip and the outer edge of the substrate is extremely small (1 mm or less), and when the resin is supplied onto the end of one side of the substrate 1, the resin supply space is narrow, so the resin runs on the top surface of the chip. It is necessary to devise it so that it does not hang down from the substrate end face.
【0029】そこで、本実施例においては、前記樹脂5
aを充填する際、図1に示すように、樹脂供給補助用の
補助板11を使用し、その上面が基板1の一主面にほぼ
水平になるように補助板の端面を基板の一端面に対して
密着状態で当接させる工程と、この後、補助板・基板の
当接部を含む面上に樹脂5aを供給することにより樹脂
をチップ・基板間の開口部に供給する工程と、この後、
補助板を基板から引き離す工程とを具備する。Therefore, in this embodiment, the resin 5 is used.
When filling a, as shown in FIG. 1, an auxiliary plate 11 for assisting the resin supply is used, and the end face of the auxiliary plate is attached to one end face of the substrate so that the upper surface thereof is substantially horizontal to one main surface of the substrate 1. The step of bringing them into contact with each other in close contact with each other, and thereafter the step of supplying the resin to the opening between the chip and the substrate by supplying the resin 5a onto the surface including the contact portion of the auxiliary plate / the substrate. After this,
And a step of separating the auxiliary plate from the substrate.
【0030】なお、本実施例の各工程は、既存の半導体
装置用の自動組立装置および新規に制作される専用装置
を用いて自動的に実施される。前記補助板・基板の当接
部を含む面上に樹脂を供給する際、例えば従来と同様の
ディスペンサを用いてそのニードル10から例えば補助
板・基板の当接部に沿って一直線上に樹脂を1回供給す
るだけでほぼ一定量の樹脂を安定に供給することが可能
である。この場合、基板上の補助板当接側の一辺におけ
るチップ・基板間の開口部に樹脂が付着するように、か
つ、チップ・基板間の開口部にほぼ均等に樹脂を供給す
ることが望ましい。これにより、樹脂の毛細管現象が始
まり、チップ・基板間にほぼ均等に樹脂を流し込んで充
填させることが可能になる。この際、上記毛細管現象を
促進するために、樹脂充填部に例えば60℃程度の温度
を加えるようにすれば、樹脂の粘度が低下し、樹脂の流
し込み速度が向上する。The steps of this embodiment are automatically carried out by using an existing automatic assembly apparatus for semiconductor devices and a newly produced special apparatus. When the resin is supplied onto the surface including the contact portion of the auxiliary plate / substrate, the resin is linearly aligned from the needle 10 using, for example, a dispenser similar to the conventional one along the contact portion of the auxiliary plate / substrate. It is possible to stably supply an almost constant amount of resin by supplying only once. In this case, it is desirable to supply the resin so that the resin adheres to the opening between the chip and the substrate on one side of the auxiliary plate contacting side on the substrate, and the opening is substantially evenly provided between the chip and the substrate. As a result, the capillarity phenomenon of the resin starts, and the resin can be poured and evenly filled between the chip and the substrate. At this time, if a temperature of, for example, about 60 ° C. is applied to the resin-filled portion in order to promote the capillary phenomenon, the viscosity of the resin is lowered and the pouring speed of the resin is improved.
【0031】なお、補助板11の材質として、補助板・
配線基板の当接部に樹脂が毛細管現象により流れ込んだ
り、上記当接部の基板端面に樹脂が垂れ下がることがな
いように基板と比べて弾力性があり、基板との密着性が
よいものを使用することが望ましい。As the material of the auxiliary plate 11, the auxiliary plate
Use a material that is more elastic than the board and has good adhesion to the board so that the resin does not flow into the contact area of the wiring board due to the capillary phenomenon and the resin does not hang down on the board end surface of the contact area. It is desirable to do.
【0032】また、補助板の端面を基板の一端面に対し
て密着状態で当接させる際、図1(a)中に矢印で示す
ように横方向から圧力を加え続けて密着状態を維持する
ことが望ましい。When the end face of the auxiliary plate is brought into close contact with the one end face of the substrate, pressure is applied continuously from the lateral direction as indicated by an arrow in FIG. 1A to maintain the close contact state. Is desirable.
【0033】また、補助板の材質として、補助板上の樹
脂が基板上に移り易くなるように樹脂をはじく性質(疎
液性)を有するものを使用することが望ましい。また、
補助板を基板から引き離す際、図1(b)中に矢印で示
すように補助板11および/または基板1をその当接端
面に沿って水平方向に滑らせて引き離すことが望まし
い。これにより、前記配線基板の端面に樹脂が付着して
いる場合でも樹脂を拭い取ることが可能になる。As the material of the auxiliary plate, it is desirable to use a material having a property of repelling the resin (lyophobic property) so that the resin on the auxiliary plate can be easily transferred onto the substrate. Also,
When the auxiliary plate is separated from the substrate, it is desirable that the auxiliary plate 11 and / or the substrate 1 be slid horizontally along the abutting end face thereof and separated as indicated by the arrow in FIG. Accordingly, even if the resin is attached to the end surface of the wiring board, the resin can be wiped off.
【0034】なお、補助板を基板から引き離す際、図3
中に矢印で示すように補助板11および/または基板1
をその当接端面に沿って垂直方向に滑らせて引き離すよ
うにしてもよい。Incidentally, when the auxiliary plate is separated from the substrate, as shown in FIG.
Auxiliary plate 11 and / or substrate 1 as indicated by the arrow therein
May be slid vertically along the abutting end face and separated.
【0035】上記したように補助板11として望ましい
材質として、基板と比べて弾力性があり、基板との密着
性がよく、樹脂に対する疎液性を有するもの(基板の絶
縁基材がセラミック系あるいは樹脂系である場合には、
例えばシリコーンゴム)を使用することが望ましい。As described above, the preferable material for the auxiliary plate 11 is one that is more elastic than the substrate, has good adhesion to the substrate, and is lyophobic to the resin (the insulating base material of the substrate is ceramic-based or If it is a resin type,
It is desirable to use, for example, silicone rubber.
【0036】また、補助板の上面が基板の一主面にほぼ
水平になるように補助板の端面を基板の一端面に対して
密着状態で当接させる際、同一水平面を有する台座上に
補助板と基板とを並べて配置し、作業性を向上させるた
めに、補助板の厚さとして基板の厚さと同程度のものを
使用することが望ましい。Further, when the end surface of the auxiliary plate is brought into close contact with one end surface of the substrate so that the upper surface of the auxiliary plate is substantially horizontal to the main surface of the substrate, the auxiliary plate is supported on the pedestal having the same horizontal plane. In order to improve workability by arranging the plate and the substrate side by side, it is desirable to use the auxiliary plate having the same thickness as that of the substrate.
【0037】そして、前記したように樹脂の充填を完了
し、補助板を基板から引き離した後、前記充填させた樹
脂を熱などにより硬化させることによりチップ・基板間
に樹脂層を形成し、片面樹脂封止型パッケージ構造を有
する半導体装置が完成する。After the resin filling is completed as described above and the auxiliary plate is separated from the substrate, the filled resin is cured by heat or the like to form a resin layer between the chip and the substrate. A semiconductor device having a resin-sealed package structure is completed.
【0038】なお、前記したように樹脂を供給する際、
作業の安定性を確保するために、補助板として、基板の
補助板当接側の一辺よりも幅広(例えば幅25mm)の
ものを使用することが望ましい。When supplying the resin as described above,
In order to secure the stability of the work, it is desirable to use the auxiliary plate having a width (for example, 25 mm) wider than one side of the substrate on the auxiliary plate contact side.
【0039】また、前記したように樹脂を供給する際、
樹脂が適度の流動性などを呈する条件に設定し、あるい
は、液状の樹脂を使用する。また、樹脂としては、樹脂
層として形成された状態でチップ・基板の材質の違い
(ヤング率、熱膨脹率など)から生じる内部応力により
チップ・基板相互の接続部が劣化することを緩和する性
質を持つ、かつ、チップ・基板間への充填時にチップ・
基板間へ入り込める径(例えば25μm以下)のフィラ
ーを含むものを選択することが望ましい。When the resin is supplied as described above,
The resin is set to a condition that exhibits appropriate fluidity, or a liquid resin is used. In addition, the resin has a property of alleviating deterioration of the connecting portion between the chip and the substrate due to internal stress caused by the difference in the material of the chip and the substrate (Young's modulus, coefficient of thermal expansion, etc.) when formed as the resin layer. Holds the chip when filling between the chip and substrate
It is desirable to select a material containing a filler having a diameter (for example, 25 μm or less) that can enter between the substrates.
【0040】即ち、上記実施例の方法においては、チッ
プ・基板間に対して樹脂を充填する際に、樹脂供給補助
用の補助板を使用し、その上面が基板の一主面にほぼ水
平になるように補助板の端面を基板の少なくとも一端面
に対して密着状態で当接させる。この後、補助板・基板
の当接部を含む面上に樹脂を供給した後、補助板を基板
から引き離す。That is, in the method of the above embodiment, when the resin is filled between the chip and the substrate, the auxiliary plate for assisting the resin supply is used, and the upper surface of the auxiliary plate is substantially horizontal to the main surface of the substrate. So that the end face of the auxiliary plate is brought into close contact with at least one end face of the substrate. Then, after supplying the resin on the surface including the contact portion between the auxiliary plate and the substrate, the auxiliary plate is separated from the substrate.
【0041】これにより、チップ外縁・基板外縁間の距
離S3が微小であって端部上の樹脂の供給スペースが狭
い場合でも、補助板上の樹脂を基板端部上に移し、この
樹脂をチップ・基板間の開口の中央部近傍のチップ側面
に付着させることが可能になる。このようにチップ側面
に樹脂が付着すると、樹脂の毛細管現象が始まり、チッ
プ・基板間における樹脂の毛細管現象を利用してチップ
・基板間に樹脂を流し込んで充填することが可能にな
る。As a result, even if the distance S3 between the outer edge of the chip and the outer edge of the substrate is small and the resin supply space on the end is narrow, the resin on the auxiliary plate is transferred onto the end of the substrate and the resin is transferred to the chip. -It can be attached to the side surface of the chip near the center of the opening between the substrates. When the resin adheres to the side surface of the chip in this way, the capillary action of the resin starts, and it becomes possible to flow and fill the resin between the chip and the substrate by utilizing the capillary action of the resin between the chip and the substrate.
【0042】従って、上記実施例の方法によれば、チッ
プ外縁・基板外縁間の距離S3が微小の場合でも、従来
と同様のディスペンサと使用樹脂の性質に見合った口径
を有するニードルを使用でき、ニードルの口径に関係な
くチップ・基板間に対してほぼ一定量の樹脂を安定・確
実に供給でき、樹脂がチップ上面に乗り上げたり樹脂が
基板端面から垂れ下がりすることがなく、パッケージの
仕上がり寸法のばらつきや外観上の不具合の発生を抑止
することが可能になる。これにより、半導体装置の歩留
りの向上、コストダウンを図ることが可能になる。Therefore, according to the method of the above-mentioned embodiment, even when the distance S3 between the outer edge of the chip and the outer edge of the substrate is small, the same dispenser as in the conventional case and the needle having the diameter corresponding to the property of the resin used can be used. Regardless of the diameter of the needle, a stable and reliable supply of a fixed amount of resin between the chip and the substrate is possible, and the resin does not run onto the top surface of the chip and the resin does not hang down from the end surface of the substrate. It is possible to suppress the occurrence of defects in appearance and appearance. This makes it possible to improve the yield of semiconductor devices and reduce the cost.
【0043】なお、上記実施例で示したような補助板の
代わりに、例えば図4に示すように、一端面に帯状の薄
い突片12aが形成された補助板12を使用し、上記突
片を基板の一端部上面に載置した状態で突片上およびこ
れに隣接する基板面上に樹脂を供給するようにしてもよ
い。Instead of the auxiliary plate as shown in the above embodiment, an auxiliary plate 12 having a strip-shaped thin protruding piece 12a formed on one end surface is used as shown in FIG. The resin may be supplied onto the projecting piece and the surface of the substrate adjacent to the projecting piece while being mounted on the upper surface of one end of the substrate.
【0044】また、上記実施例では、樹脂を供給する
際、1枚の補助板を基板の一辺の端面に対して密着状態
で当接させて一辺部上にのみ供給したが、2枚の補助板
を基板の直交する二辺の各端面に対してそれぞれ密着状
態で当接させて二辺部上にそれぞれ供給するようにして
もよく、さらには、4枚の補助板を基板の四辺の各端面
に対してそれぞれ密着状態で当接させて四辺部上にそれ
ぞれ供給するようにしてもよい。Further, in the above embodiment, when the resin is supplied, one auxiliary plate is brought into close contact with the end face of one side of the substrate and supplied only on one side, but two auxiliary plates are supplied. The plates may be brought into close contact with the end faces of the two orthogonal sides of the substrate so as to be supplied onto the two sides, respectively. Further, four auxiliary plates may be provided on each of the four sides of the substrate. You may make it contact | abut in contact with each end face, respectively, and may make it respectively supply on four sides.
【0045】また、チップ・基板間に充填させた樹脂を
硬化させる際、チップ・基板に荷重を加えてチップのバ
ンプ電極と基板の接続パッドとの位置ずれを防ぎながら
樹脂を硬化させることが望ましい。Further, when the resin filled between the chip and the substrate is cured, it is desirable to apply a load to the chip and the substrate to cure the resin while preventing the displacement between the bump electrodes of the chip and the connection pads of the substrate. .
【0046】また、基板として、その一主面上の外周縁
端部にベタ型配線パターンを形成したものを用意すれ
ば、前記フリップチップボンディングを行う際に、前記
ベタ型配線パターンによる補強的な作用により、配線基
板の割れや反りなどの発生が抑制され、完成品の歩留り
が良くなり、完成品をメモリカードなどに組み込んだ場
合に耐ノイズ性も良好になる。また、前記バンプ電極
を、チップ側ではなく基板側に形成してもよい。If a substrate having a solid wiring pattern formed on the outer peripheral edge of one main surface is prepared as a substrate, it is reinforced by the solid wiring pattern when performing the flip chip bonding. By the action, the generation of cracks or warpage of the wiring board is suppressed, the yield of the finished product is improved, and the noise resistance is also improved when the finished product is incorporated into a memory card or the like. Further, the bump electrodes may be formed on the substrate side instead of the chip side.
【0047】なお、基板およびチップは、外形が正方形
のものに限らず、長方形のものを用いてもよい。また、
基板は、アルミナ系、窒化アルミ系のものに限らず、樹
脂系のもの(BTレジン基板など)を用いてもよい。ま
た、基板は、図6に示したように、配線および外部接続
用端子が基板に対してほぼ同一平面を成すように埋め込
まれているもの(例えばアルミナ系の絶縁基材に対して
グリーンシート法により形成されたものとか、樹脂系の
絶縁基材に対してプリプレグ法により形成されたもの)
に限らず、図5に示したように、配線および外部接続用
端子が基板から突出する状態で形成されているものを用
いてもよい。また、基板は、ブラインドビアホールを介
して上下面が電気的に接続されているものや多層構造の
ものを用いてもよい。The substrate and the chips are not limited to have a square outer shape, but may have a rectangular outer shape. Also,
The substrate is not limited to an alumina-based or aluminum nitride-based substrate, and a resin-based substrate (BT resin substrate or the like) may be used. In addition, as shown in FIG. 6, the substrate is one in which wiring and external connection terminals are embedded so as to be substantially flush with the substrate (for example, a green sheet method is applied to an alumina-based insulating base material). Or a resin-based insulating base material formed by the prepreg method)
However, as shown in FIG. 5, the wiring and the external connection terminal may be formed so as to project from the substrate. Further, the substrate may have a structure in which the upper and lower surfaces are electrically connected via a blind via hole or a multilayer structure.
【0048】また、チップを基板上にフリップチップボ
ンディングする際、前記実施例のように接続パッドにバ
ンプ電極の少なくとも先端部を埋め込むように圧入する
方法に限らず、前記特願平6−50757号に詳細に記
載されているように、例えば金の接続パッドと金のバン
プ電極との間で固相拡散を起こさせて接合させるように
してもよい。Further, when the chip is flip-chip bonded on the substrate, the method is not limited to the method of press-fitting so that at least the tip end of the bump electrode is embedded in the connection pad as in the above-mentioned embodiment, but the above-mentioned Japanese Patent Application No. 6-50757. As described in detail in Section 1), for example, solid phase diffusion may occur between the gold connection pad and the gold bump electrode so as to be joined.
【0049】[0049]
【発明の効果】上述したように本発明の半導体装置の製
造方法によれば、片面樹脂封止型パッケージ構造を有す
る半導体装置を製造するためにチップ・基板間に対して
樹脂を充填する際、チップ外縁・基板外縁間の距離が微
小の場合でも、従来と同様のディスペンサと使用樹脂の
性質に見合った口径を有するニードルを使用でき、パッ
ケージの仕上がり寸法のばらつきや外観上の不具合の発
生をニードルの口径に関係なく抑止でき、片面樹脂封止
型パッケージ構造の一層の小型化を図ることができる。As described above, according to the method of manufacturing the semiconductor device of the present invention, when the resin is filled between the chip and the substrate to manufacture the semiconductor device having the single-sided resin-sealed package structure, Even if the distance between the outer edge of the chip and the outer edge of the substrate is very small, you can use the same dispenser as the conventional one and a needle with a diameter that matches the properties of the resin used. Can be suppressed regardless of the diameter, and the single-sided resin-sealed package structure can be further downsized.
【図1】本発明の半導体装置の製造方法の一実施例に係
る片面樹脂封止型パッケージ構造を有する半導体装置の
製造工程、特に樹脂封止工程の一例の一部を概略的に示
す図。FIG. 1 is a diagram schematically showing a part of an example of a manufacturing process of a semiconductor device having a single-sided resin-encapsulated package structure according to an embodiment of the method for manufacturing a semiconductor device of the present invention, particularly an example of a resin-encapsulating process.
【図2】図1の樹脂封止工程を経て形成された半導体装
置の一例を示す斜視図および断面図。2A and 2B are a perspective view and a cross-sectional view showing an example of a semiconductor device formed through the resin sealing process of FIG.
【図3】図1(b)の工程の変形例を示す図。FIG. 3 is a diagram showing a modified example of the process of FIG.
【図4】図1(a)の工程の変形例を示す図。FIG. 4 is a diagram showing a modified example of the process of FIG.
【図5】先願に係る片面樹脂封止型パッケージ構造の一
例を示す断面図。FIG. 5 is a sectional view showing an example of a single-sided resin-sealed package structure according to the prior application.
【図6】他の先願に係る片面樹脂封止型パッケージ構造
の一例を示す断面図。FIG. 6 is a sectional view showing an example of a single-sided resin-sealed package structure according to another prior application.
【図7】図5および図6の樹脂層の形成工程を示す図。FIG. 7 is a diagram showing a process of forming the resin layer of FIGS. 5 and 6;
1…配線基板、1a…配線、1b…被接続部(接続パッ
ド)、2…半導体チップ、2a…バンプ電極、3…スル
ーホール配線、4…外部接続用端子、5…樹脂層、5a
…樹脂、S3…チップ外縁・基板外縁間の距離、11、
12…補助板。DESCRIPTION OF SYMBOLS 1 ... Wiring board, 1a ... Wiring, 1b ... Connected part (connection pad), 2 ... Semiconductor chip, 2a ... Bump electrode, 3 ... Through hole wiring, 4 ... External connection terminal, 5 ... Resin layer, 5a
... Resin, S3 ... Distance between chip outer edge and substrate outer edge, 11,
12 ... Auxiliary plate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 岩崎 博 神奈川県横浜市磯子区新磯子町33番地 株 式会社東芝生産技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiroshi Iwasaki 33, Shinisogo-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture
Claims (5)
主面に外部接続用端子を導出・露出させた配線基板の被
接続部とこれに対応する半導体チップの電極端子部の位
置が対向するように半導体チップを配置する工程と、上
記配線基板の被接続部とこれに対応する半導体チップの
電極端子部を固定接続する工程と、この後、上記半導体
チップと配線基板との間に封止用樹脂を充填する工程
と、上記充填した封止用樹脂を硬化させる工程とを具備
し、前記封止用樹脂を充填する際、樹脂供給補助用の補
助板を使用し、その上面が上記配線基板の一主面にほぼ
水平になるように上記補助板の端面を上記配線基板の少
なくとも一端面に対して密着状態で当接させる工程と、
この後、上記補助板・配線基板の当接部を含む面上に樹
脂を供給することにより上記樹脂を前記チップ・基板間
の開口部に供給する工程と、この後、前記補助板を前記
配線基板から引き離す工程とを具備することを特徴とす
る半導体装置の製造方法。1. A connected portion of a wiring board having wirings including a connected portion on one main surface, and external connection terminals led out and exposed on the other main surface, and an electrode terminal portion of a semiconductor chip corresponding to the connected portion. The step of arranging the semiconductor chip so that the positions of the semiconductor chips face each other, the step of fixedly connecting the connected part of the wiring board and the electrode terminal part of the semiconductor chip corresponding thereto, and then the semiconductor chip and the wiring board Between the step of filling a sealing resin, and a step of curing the filled sealing resin, when filling the sealing resin, using an auxiliary plate for resin supply assistance, A step of bringing the end surface of the auxiliary plate into close contact with at least one end surface of the wiring board so that its upper surface is substantially horizontal to one main surface of the wiring board;
After that, a step of supplying the resin to the opening between the chip and the substrate by supplying the resin on the surface including the contact portion of the auxiliary plate and the wiring board, and thereafter, the auxiliary plate is connected to the wiring board. And a step of separating the substrate from the substrate.
おいて、前記補助板・配線基板の当接部を含む面上に樹
脂を供給する際、上記樹脂が前記チップの側面に付着す
るように供給することを特徴とする半導体装置の製造方
法。2. The method of manufacturing a semiconductor device according to claim 1, wherein when the resin is supplied onto a surface including a contact portion of the auxiliary plate / wiring board, the resin adheres to a side surface of the chip. A method for manufacturing a semiconductor device, characterized by supplying the same.
造方法において、前記補助板を前記配線基板から引き離
す際、前記補助板あるいは前記配線基板をその当接端面
に沿って水平方向あるいは垂直方向に滑らせて引き離す
ことを特徴とする半導体装置の製造方法。3. The method of manufacturing a semiconductor device according to claim 1, wherein when the auxiliary plate is separated from the wiring board, the auxiliary plate or the wiring board is horizontally or vertically oriented along an abutting end surface thereof. A method of manufacturing a semiconductor device, which comprises sliding the substrate to separate it.
半導体装置の製造方法において、前記補助板の材質とし
て、前記配線基板と比べて弾力性があり、前記配線基板
との密着性がよく、前記樹脂に対する疎液性を有するも
のを使用することを特徴とする半導体装置の製造方法。4. The method of manufacturing a semiconductor device according to claim 1, wherein the auxiliary plate is made of a material that is more elastic than the wiring board and has good adhesion to the wiring board. A method of manufacturing a semiconductor device, characterized by using a material having good lyophobic property to the resin.
おいて、前記配線基板の絶縁基材はセラミック系あるい
は樹脂系であり、前記補助板としてシリコーンゴムを使
用することを特徴とする半導体装置の製造方法。5. The method of manufacturing a semiconductor device according to claim 4, wherein the insulating base material of the wiring board is a ceramic type or a resin type, and silicone rubber is used as the auxiliary plate. Production method.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29523394A JP3272889B2 (en) | 1994-11-29 | 1994-11-29 | Method for manufacturing semiconductor device |
US08/575,046 US5677246A (en) | 1994-11-29 | 1995-11-28 | Method of manufacturing semiconductor devices |
KR1019950044662A KR0184371B1 (en) | 1994-11-29 | 1995-11-29 | Method of manufacturing semiconductor devices |
EP95118803A EP0715348A3 (en) | 1994-11-29 | 1995-11-29 | Method of manufacturing semiconductor devices |
TW084113365A TW289851B (en) | 1994-11-29 | 1995-12-14 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29523394A JP3272889B2 (en) | 1994-11-29 | 1994-11-29 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08153741A true JPH08153741A (en) | 1996-06-11 |
JP3272889B2 JP3272889B2 (en) | 2002-04-08 |
Family
ID=17817943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29523394A Expired - Fee Related JP3272889B2 (en) | 1994-11-29 | 1994-11-29 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3272889B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998034276A1 (en) * | 1997-02-04 | 1998-08-06 | Matsushita Electric Industrial Co., Ltd. | Method and device for sealing ic chip |
US6376918B1 (en) * | 1996-03-07 | 2002-04-23 | Micron Technology, Inc. | Underfill of a bumped or raised die utilizing a barrier adjacent to the side wall of slip chip |
-
1994
- 1994-11-29 JP JP29523394A patent/JP3272889B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6376918B1 (en) * | 1996-03-07 | 2002-04-23 | Micron Technology, Inc. | Underfill of a bumped or raised die utilizing a barrier adjacent to the side wall of slip chip |
US6455933B1 (en) | 1996-03-07 | 2002-09-24 | Micron Technology, Inc. | Underfill of a bumped or raised die utilizing a barrier adjacent to the side wall of flip chip |
US6815817B2 (en) | 1996-03-07 | 2004-11-09 | Micron Technology, Inc. | Underfill of a bumped or raised die utilizing barrier adjacent to the side wall of a flip-chip |
WO1998034276A1 (en) * | 1997-02-04 | 1998-08-06 | Matsushita Electric Industrial Co., Ltd. | Method and device for sealing ic chip |
US6055724A (en) * | 1997-02-04 | 2000-05-02 | Matsushita Electric Industrial Co., Ltd. | Method and device for sealing IC chip |
Also Published As
Publication number | Publication date |
---|---|
JP3272889B2 (en) | 2002-04-08 |
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