JPH08136710A - Manufacturing device for substrate provided with optical thin film - Google Patents

Abstract

PURPOSE: To provide a manufacturing device for substrate provided with an optical thin film capable of manufacturing in high productivity the substrate provided with the optical thin film such as antireflection filter by using a relatively small manufacturing device. CONSTITUTION: A source 2 generating a film forming particles flux and a moving means for a substrate to be film-formed moving the substrates 210 and 210' to be film-formed so that the substrates pass through a region in which the substrates are exposed to the film forming particles flux 5 generated by the source 2 for generating film forming particles flux, a film forming monitor plate 208 movable in a range including the outside of the range in which the substrate to be film-formed is exposed to the film forming particles flux 5, an optical interference film thickness measuring device 7, an optical fiber bandle 240 bonding optically between the measuring device 7 and the monitor plate 208 and a film forming process controlling means 260 controlling the film forming processing based on a film thickness of a monitor thin film formed on the monitor plate 208 and measured by the measuring device 7 are provided.

Description

Detailed Description of the Invention

[0001]

The present invention relates to an antireflection filter,
The present invention relates to a device for manufacturing a substrate with an optical thin film for forming an optical thin film such as an interference filter, a half mirror, various band pass filters, a multicolor coat such as sunglasses and a coloring coat for various ornaments.

[0002]

2. Description of the Related Art As an apparatus for manufacturing a substrate with an optical thin film by vacuum vapor deposition, sputtering, etc., an apparatus for measuring the film thickness of the formed optical thin film and controlling the film forming process based on the measurement result of the film thickness. A device that does not perform such control is widely used.

Among these, an apparatus that does not measure the film thickness of an optical thin film, for example, keeps the conditions of the atmosphere during film formation constant, makes the film formation rate constant, and controls the film formation time to obtain the required film. Form a thick optical thin film. Further, when performing film formation while moving the film formation target substrate of the film formation target, an optical thin film having a desired film thickness may be formed by controlling the moving speed of the film formation target substrate.

In such an apparatus for manufacturing a substrate with an optical thin film, the thickness of the formed optical thin film is not measured. Therefore, the optical thin film actually formed does not meet the required specifications until the manufacture of the optical thin film is completed. I couldn't confirm whether or not it met. Usually, the optical thin film forming apparatus is a vacuum apparatus,
It is not preferable to frequently take out the substrate on which the optical thin film is formed and measure the film thickness. Therefore, even when a plurality of optical thin films are formed, the film thickness cannot be measured until all the optical thin films have been formed.

However, in general, the conditions such as the film forming speed of the optical thin film forming apparatus are easily changed, and the film thickness of the optical thin film is changed by such a change, so that the optical thin film which does not satisfy the specifications is often formed. . Therefore, it has been difficult to maintain the yield above a certain level in the method of manufacturing a thin film that does not involve film thickness measurement in the film forming step as described above.

Therefore, it has become possible to control the film forming process while measuring the film thickness of the optical thin film in the film forming step. The following is an example of forming an optical thin film such as an antireflection film on a flat substrate such as a glass plate by vacuum evaporation, and while measuring the film thickness of the optical thin film, the film formation process is controlled based on the measured value. A conventional method for manufacturing a substrate with a thin film will be described with reference to the drawings.

FIG. 9 is a schematic view of the state of manufacturing such a substrate with an optical thin film, as viewed from a direction parallel to the substrate surface and perpendicular to the traveling direction of the substrate. The optical thin film material 3 is placed inside the vacuum chamber 16 with the film-forming particle flux generation site 2 facing upward in the drawing. An electron beam is emitted from the electron gun 6, reaches the film formation particle bundle generation site 2 by the effect of a magnetic field (not shown), and heats it, whereby the film formation particle bundle 5 is generated. A film formation monitor plate 8 is fixedly provided at or near the film formation particle bundle axis 9 (the direction in which the film formation particles are most strongly generated) of the film formation particle bundle 5 thus generated. An optical interference type film thickness measuring device 7 for optically measuring the film thickness of the formed optical thin film is provided further above. The vicinity of the film-forming particle bundle axis 9 between the film-forming particle bundle generation site 2 and the film-forming monitor plate 8 is set to the film-forming target substrate group 1 (1
a), 1b, 1c, 1d, ...) are exposed to the film-forming particle bundle 5 while moving in the direction perpendicular to the film-forming particle bundle axis 9 (right direction in the figure), and the optical thin film is formed on the film formation target substrate. It is adapted to be formed on the lower surface of each substrate of group 1. In addition, the film-forming particle bundle 5
In order to limit the size in the traveling direction of the film formation target substrate group 1 in the range to which the film formation target substrate group 1 is exposed, the correction plates 4 a and 4 b are provided with the film formation particle flux generation site 2 and the film formation target substrate group 1.
It is provided in the middle of. A shutter 11 for blocking the film-forming particle bundle 5 as needed is also provided.

FIG. 10 is a view showing this state from the position of the film formation monitor plate 8 in the direction opposite to the film formation particle bundle axis 9. Substrates 10a, 10b, 10c, 10d for film formation,
10a ′, 10b ′, 10c ′, and 10d ′ are arranged in two rows as shown in the figure, and in each substrate group 1 for film formation, the substrate or the like is provided on or near the axis of the film formation particle flux axis 9. A gap is formed so as not to block the film formation particle bundle 5. The film formation monitor plate 8 is fixed so that the film formation particles reach the film formation monitor plate 8 through this gap.

The substrates 10a, 10 of the substrate group 1 for film formation
b, 10c, 10d, 10a ', 10b', 10c ',
When forming the optical thin film on 10d ', the film-forming particle bundle generation site 2 of the optical thin-film material 3 is continuously heated by the electron beam emitted from the electron gun 6 to generate the film-forming particles.
At this time, the shutter 11 is initially closed,
The film-forming particles cannot reach the film-forming target substrate. When the temperature of the film-forming particle bundle generation site 2 reaches a steady state, the strength of the film-forming particles generated also reaches a steady state. When this is confirmed, the shutter 11 is opened and at the same time, the film formation target substrate group 1 is moved to the right at a constant speed from the left in FIG. The film-forming particles generated from the film-forming particle bundle generating portion 2 fly radially in a direction centered on the direction of the film-forming particle bundle axis 9 and reach each substrate of the film-forming target substrate group 1. At this time, the range in which a sufficient amount of film-forming particles fly is defined as the film-forming particle bundle 5. Also, the film-forming particle bundle axis 9
Part of the film-forming particles reach the film-forming monitor plate 8 through the gap on or near the axis of the film-forming film.

The film thickness of the optical thin film on each substrate of the film formation target substrate group 1 is obtained by measuring the film thickness of the monitor thin film formed on the film formation monitor plate 8 by the optical interference type film thickness measuring device 7.
It is measured indirectly. A monitor thin film is formed on the film formation monitor plate 8 under conditions similar to those of the substrates of the film formation target substrate group 1. Therefore, the film thickness of the monitor thin film has a certain correlation with the film thickness of the optical thin film formed on each substrate of the film formation target substrate group 1.

Ideally, each of the groups 10 of film formation target substrates 10 is to be formed.
a, 10b, 10c, 10d, 10a ', 10b', 1
When an optical thin film is formed on the film formation target substrate group 1 of 0c ′ and 10d ′, the film thickness of the monitor thin film on the film formation monitor plate 8 is about 10 times that of the optical thin film formed on the film formation target substrate group 1. The film thickness. In reality, such a correspondence is strictly obtained by experiments. Further, from this result, there is a correspondence relationship between the change in the film thickness of the monitor thin film of the film formation monitor plate 8 per unit time and the change in the film thickness of the optical thin film formed on the film formation target substrate group 1 per unit time. Desired.

Based on the result of the film thickness measurement of this optical thin film,
Control of the film formation process such as adjusting characteristics such as the film formation speed during film formation and the refractive index of the optical thin film to be formed, and closing the shutter 11 to end the film formation when a required film thickness is obtained. To do.

An apparatus for controlling the film formation process while performing the film thickness measurement of the optical thin film by using the film formation monitor plate fixed on or near the axis of the film formation particle flux axis as described above is, for example, It is disclosed in Japanese Laid-Open Patent Publication No. 1-306560.

[0014]

However, the present inventors have found that the conventional apparatus for manufacturing a substrate with an optical thin film is
We have found the following problems. That is,
For film thickness measurement of the optical thin film, a film formation monitor plate is fixed on or near the axis of the film formation particle bundle axis, and a thin film is formed on the film formation monitor plate.Therefore, a gap is provided in the center of the film formation particle bundle. ,
The film formation target substrate had to be arranged and moved so that the film formation target substrate did not block this gap. This is not a problem when the substrate to be film-formed is a small substrate such as an optical lens, since a large number of substrates to be film-formed are arranged in several rows in any case.

However, the present inventors have found that the diagonal length is 1
When an optical thin film is formed on a large film formation target substrate such as a surface antireflection filter of a display device of 4 inches (35 cm) or more, the film thickness of the optical thin film is measured on or near the axis of the film formation particle flux axis. It has been found that placing the film formation monitor plate on the substrate causes an undesired increase in the size of the production facility or a significant decrease in productivity. That is, in order to prevent the film formation target substrate from blocking the central gap of the film formation particle bundle, the film formation target substrate group 1 has at least two rows as shown in FIG. They must be arranged so that a gap is always formed between them. Therefore, the range in which the film formation target substrate group 1 is exposed to the film formation particle bundle 5 (the film formation region 20 shown by the chain double-dashed line in FIG. 10) has a width that is at least twice the width of the film formation target substrate. There was a need.

Further, when the size of the film formation target substrate is changed according to the change of the type of the film formation target substrate to be manufactured, if the film formation monitor is fixed in the vicinity of the film formation particle flux axis, the film formation target substrate In some cases, the film forming process cannot be controlled by the film forming monitor because the film forming monitor and the supporting member and the like block the space between the film forming monitor and the part where the film forming particle flux is generated. In other words, in order to control the film formation process by the fixed film formation monitor, it was necessary to impose severe restrictions on the size and shape of the film formation target substrate.

Further, according to the knowledge of the present inventors, the monitor thin film formed on the film formation monitor plate is formed on the film formation target substrate unless the gap between the substrate lines is made considerably large. It may be much thinner than the optical film formed. The present inventors have found out that this is mainly because the film-forming particles that have collided with the gas molecules remaining in the vacuum chamber are blocked by the film-forming target substrate or the substrate holder that holds the same. This state is shown in FIG. If there are no gas molecules in the vacuum chamber, the film-forming particles will not be blocked by the source of the film-forming particle bundle and will pass through the gap between the substrate rows to the film-forming monitor plate. Reach Therefore, in this case, the film thickness of the monitor thin film formed on the film formation monitor plate is almost the same as the optical thin film formed on the film formation target substrate. However, in reality, some gas molecules 14 remain in the vacuum chamber due to the performance limitation of the vacuum pump and the necessity of the film forming process. Therefore, the film formation particles 13 reach the film formation target substrate or the film formation monitor plate while colliding with the gas molecules 14. Since there is no obstruction between the film-forming target substrate and the source of the film-forming particle bundle, the film-forming particles 13 that have collided with the gas molecules 14 in this way can be deflected in the flight course, but the film-forming target substrate. Can be reached. However, in the case of the film formation monitor plate, the film formation target substrate is interposed between the film formation particle flux generation source and the film formation particles that collide with the gas molecules 14 unless the gap between the substrate rows is sufficiently large. The film 13 is blocked by the film formation target substrates 1b and 1c. Further, when the film formation monitor plate is usually provided in the vicinity of the film formation particle flux axis, the distance from the film formation particle flux generation source is longer than that of the film formation target substrate. Therefore, even if the flight direction is toward the film formation monitor plate, the film formation particle 13 does not reach the film formation monitor plate by colliding with the gas particles 14.
Will be higher. Therefore, the monitor thin film formed on the film formation monitor plate is, for example, half or less of the optical thin film on the film formation target substrate. Therefore, the width of the film formation region needs to be considerably larger than twice the width of the film formation target substrate. As described above, this problem becomes more serious as the substrate for film formation becomes larger.

Therefore, although the film forming region can be widened as a production facility, it cannot be used effectively due to the restriction of the position of the film forming monitor plate, resulting in a remarkable increase in productivity. There were many cases of failure. For example, when an optical thin film is formed on a surface antireflection filter (short side 26 cm) for a display device having a diagonal length of 14 inches (35 cm) using a production facility with a film forming region width of 1 m, the film forming target It is physically possible to arrange the substrates in three rows. Nevertheless, since it is necessary to place the film formation monitor near the axis of the film formation particle flux (that is, in the center of the film formation region) and arrange the film formation target substrate so as not to block this, the film formation target substrates are arranged in two rows. Had to arrange in. That is, the film-forming target substrate as described above could be manufactured only with a productivity of 2/3 of the potential productivity.

Further, in the above example, the film formation monitor is formed between the rows of the film formation target substrates (for example, between the first row and the second row), that is, only 1/6 of the width of the film formation region is formed. If the film formation monitor is placed outside the particle flux axis, the film formation target substrate
There is a possibility that the films may be arranged in rows.

However, if the type of film formation target substrate is changed to a surface antireflection filter (short side 38 cm) for a display device having a diagonal length of 21 inches (53 cm), for example, the film formation target substrate is physically changed to 2 Although it is possible to arrange the films in rows, the film formation target substrates block the film formation monitor plate, so that the film formation target substrates had to be arranged in one line in the end. In this case, the productivity had to be halved.

[0021] Therefore, an object of the present invention is to achieve the same multi-product (multi-size) production without causing an undesired increase in the size of production equipment and a decrease in productivity accompanying the increase in size of the substrate on which the optical thin film is formed. To provide an apparatus for manufacturing a substrate with an optical thin film, which is possible with the production facility of.

[0022]

In order to achieve the above object, the apparatus for producing a substrate with an optical thin film of the present invention comprises a film-forming particle flux generating source and a film-forming particle flux generating source. A film formation target substrate moving unit that moves the film formation target substrate so as to pass through a region exposed to the film particle bundle, and a range including the outside of the range in which the film formation target substrate is exposed to the film formation particle bundle can be moved. Film deposition monitor plate, an optical interference type film thickness measuring device, an optical fiber bundle for optically coupling the optical interference type film thickness measuring device and the film forming monitor plate, and the optical interference type film thickness measuring device. And a film forming process control means for controlling the film forming process based on the film thickness of the monitor thin film formed on the film forming monitor plate.

An apparatus for manufacturing a substrate with an optical thin film according to the present invention will be described below with reference to the drawings. In the present invention,
As the film formation target substrate, a glass flat plate, a plastic flat plate, or a plastic sheet or a plastic sheet processed into a tape shape is preferably used.
In addition, a transparent or semitransparent substrate is preferably used as the film formation target substrate. When a plastic sheet processed into a tape is used as the film formation target substrate, for example, an optical thin film is formed by exposing the tape-shaped substrate wound in a roll shape to a film formation particle bundle while being rewound on another roll. To form.

Further, the effect of the present invention is greater when the substrate to be film-formed is larger and when a large number of products (many sizes) are produced. Further, the apparatus according to the present invention is suitable when the short side of the film formation target substrate (when the tape-shaped substrate is used as the film formation target substrate, the width of the tape-shaped substrate) is 20 cm or more, and when it is 26 cm or more. It is more preferable.

Further, as shown in FIG. 10, the substrate to be film-formed is arranged in a row in the moving direction, and a plurality of rows of the substrate to be film-formed are arranged side by side to simultaneously expose the optical thin film to the film-forming particle bundle. You may form. Further, the row of the film formation target substrates is not limited to one in which the film formation target substrates are linearly arranged, but may be one in which the film formation target substrates are arranged along a curve such as a circle. For example, the target substrates for film formation may be arranged along a circle, and during film formation, these substrates may be rotated along the circle so that the same substrate repeatedly passes through the film formation region or moves inside.

The film formation target substrate is moved by placing the film formation target substrate on the substrate holder or the substrate dome and moving it so as to move or pass through the area exposed to the film formation particle bundle. Is preferably carried out. When a plastic sheet processed into a tape is used as the film formation target substrate, it is preferable to rewind the tape-shaped substrate wound into a roll onto another roll.

The outside of the range in which the film formation target substrate is exposed to the film formation particle bundle means the inside of the film formation particle bundle (the range in which a sufficient amount of film formation particles fly to form a monitor thin film). Therefore, when the range (film formation region) including the part that the film formation target substrate passes while moving and is exposed to the film formation particle bundle is seen from the film formation particle bundle generation source side, the outside of the film formation region can be seen. Refers to the position. However, when the film formation target substrates are arranged in a plurality of rows, the gap between the film formation target substrate rows is included in the film formation area (for example, the film formation area 20 in FIG. 10). ).

The film formation monitor plate used in the present invention is placed inside the film formation particle bundle and can be placed at a position where it is not blocked by the film formation target substrate depending on the size and shape of the film formation target substrate. It is necessary that the film formation target substrate of the film formation target can be moved to a range including the outside of the range exposed to the film formation particle bundle. Here, the position of the film formation monitor plate refers to the position of the portion of the film formation monitor plate where the monitor thin film is formed. If this condition is satisfied, it is possible to eliminate the interposition between the generation source of the film formation particle flux and the film formation monitor.
A monitor thin film equivalent to the optical thin film formed on the film formation target substrate can be formed, and the film formation process can be accurately controlled. Also, the movable range of the film formation monitor is
It is preferable to include from the outer edge of the range in which the film formation target substrate is exposed to the film formation particle bundle to the outer edge of the film formation particle bundle. When the film formation monitor plate is moved only within the range where the film formation target substrate is exposed to the film formation particle bundle, as described above, the film formation target substrate generates the film formation particle bundle more than the film formation monitor plate. Some film-forming particles may be blocked by the film-forming target substrate or the like to move to a position close to the source (especially when the distance between the rows of the film-forming target substrate is small). Further, in order to avoid this, unless a large gap is provided between the film formation target substrate rows, the thickness of the monitor thin film becomes thin. After all, the most suitable position of the film formation monitor plate is often just outside the film formation region on the film formation target substrate.

FIG. 1 is a schematic view of an embodiment of the apparatus for producing a substrate with an optical thin film of the present invention. In this aspect, the film formation monitor plate moving mechanism 230 is provided, and the film formation monitor plate 208 can be moved in a direction perpendicular to the paper surface. Here, the optical interference type film thickness measuring device 7 is fixed near the center of the film forming region in the upper part of the drawing. This fixed optical interference type film thickness measuring device 7
The movable film formation monitor plate 208 and the movable film formation monitor plate 208 are optically coupled by using an optical fiber bundle 240 in which several tens of flexible optical fibers are bundled. Here, “optically coupled” means that the light from the light source of the optical interference type film thickness measuring device 7 is irradiated onto the film formation monitor plate 208 while maintaining the state of being able to interfere, and is reflected or transmitted here. It means that light (interference light) is connected so that it can be received by the light receiving portion of the optical interference type film thickness measuring device 7. Other than the above points, FIG.
The configuration is the same as that shown in FIG. That is, the optical thin film material 3 is placed inside the vacuum chamber 16 with the film formation particle bundle generation site 2 facing upward in the figure, and is heated by the electron beam emitted from the electron gun 6 to generate the film formation particle bundle 5. appear. Film-forming particle bundle axis 9
The film formation particle bundle 5 having the film is blocked by the shutter 11 as necessary, and the film formation target substrate groups 201a, 201b, 201 are formed.
The sizes of c, 201d, ... In the traveling direction (arrow direction) are limited by the correction plates 4a, 4b. These film formation target substrate groups are moved by an appropriate film formation target substrate moving means 250 in the direction of the arrow in the figure. Then, based on the signal from the optical interference type film thickness measuring device 7, that is, the film thickness of the monitor thin film formed on the film forming monitor plate 208 measured by the device, the film forming process control means 260 performs various processes. The membrane process is becoming controlled. Figure 2
The apparatus for manufacturing a substrate with an optical thin film of FIG.
It is the figure seen from the moving direction of 0 and 210 '. The film formation monitor plate 208 is formed according to the dimensions of the film formation target substrates 210 and 210 '.
, For example, 208a, 208b, 208c, 208d
Can be moved to the positions X, Y, Z, W shown in.
220 indicates a film forming region.

FIGS. 3 to 6 are views showing examples of positions of the film formation monitor plate suitable for forming an optical thin film on the film formation target substrates of various sizes, and the apparatus shown in FIGS. 1 and 2. FIG. 3 is a view of FIG. 6 as viewed from a direction perpendicular to the surface of the film formation target substrate. FIG. 3 shows substrates 210a, 210b, 210c, 210a ', 21 for film formation.
0b ', 210c', ... Are arranged in two rows to indicate the position of the film formation monitor plate 208 suitable for film formation while moving the film formation target substrate groups 201a, 201b, 201c ,. In this case, it is preferable that the film formation monitor plate 208 is placed outside and in the vicinity of the film formation region 220, and at a position Y close to the same horizontal plane as the film formation surface of the film formation target substrate. FIG. 4 shows a position of the film formation monitor plate 208 which is suitable for forming film formation target substrate rows having different widths side by side. In this case also, the film formation monitor plate 208 is outside the film formation region 220 and It is preferably placed at a position X which is in the vicinity and close to the same horizontal plane as the film formation surface of the film formation target substrate. FIG. 5 shows the target substrates 210a, 210b, 210c, 210a ', 210 for film formation.
b ', 210c', 210a ", 210b", 210
The position of the film formation monitor plate 208 suitable for forming films by arranging c ″, ... In three rows is shown. In this case as well, the film formation monitor plate 208 is outside and near the film formation region 220. Further, it is preferable to place the film formation target substrate at a position Z which is close to the same horizontal plane as the film formation surface of the film formation target substrate, and the large film formation target substrates 210a, 210b, 210c, ... In this case, the position of the film formation monitor plate 208 suitable for the film formation monitor plate 208 is shown.
It is preferable to place it at a position W that is outside and in the vicinity of 20, and near the same horizontal plane as the film formation surface of the film formation target substrate.

In these embodiments, the film formation monitor plate 20
The movable range of 8 is the range extending from the peripheral portion of the film formation region 220 to the outside of the film formation region. This is because the film formation region changes depending on the substrate size. This is so that the film formation monitor plate 208 can be placed as close to it as possible.

Further, it is preferable that the film forming conditions of the monitor thin film formed on the film forming monitor plate 208 are similar to the film forming conditions of the optical thin film formed on the target substrate. Although depending on the characteristics of the target optical thin film, it is preferable to obtain a monitor thin film whose physical properties such as refractive index, density, and electrical properties and the film thickness are close to those in the film formation region 220.

In order to approximate the film forming conditions of the monitor thin film to the optical thin film formed on the film formation target substrate as described above, the following conditions are preferably satisfied. First, at least a part of the range in which the angle θ formed by the straight line connecting the position of the film formation monitor plate 208 and the generation site 2 (generation source) of the film formation particle bundle 5 and the film formation particle bundle axis 9 changes is: It is preferable to be included in a range within twice the angle θ ₀ formed by the straight line connecting the point where the film formation particle flux is generated in the film formation region and the generation site and the film formation particle flux axis 9. . This is shown in FIG. In the figure, θ ₀ is a point 34 at the outer edge of the film formation region that gives the longest distance from the film formation region 20 to the source 30 of the film formation particle flux.
Represents the angle formed by the straight line 35 connecting the above and the generation source 30 and the film-forming particle bundle axis 9. The conical surface 33 is the source 30 of the film-forming particle bundle.
Is a set of straight lines having an apex at and an angle of 2 × θ ₀ with respect to the film-forming particle bundle axis 9. Therefore, the film formation monitor plate 2
It can be said that the preferable range of the position of 08 is inside the conical surface 33 and outside the film formation region 20 when viewed from the film formation particle flux generation source 30. In addition, when the source of the film-forming particle flux has a spread that cannot be regarded as a point, or when multiple sources are used, the inside of any one of the conical surfaces that satisfy the above conditions with all points of the source as apexes It is preferable as the position of the monitor plate. Further, it is preferable that at least a part of the movable range of the film formation monitor plate is included in this range. If the film formation monitor plate is moved within this range to form a film, the film thickness and physical characteristics (refractive index,
Uniformity, density, electrical characteristics, etc.) can be approximated to that of the optical thin film formed on the target substrate.

Second, at least a part of the distance range from the film formation monitor plate 208 to the generation source 30 of the film formation particle flux is 0. which is the shortest distance between the film formation region 20 and the generation source 30.
It is preferably 9 times or more and 1.1 times or less of the longest distance. This situation is shown in FIG. FIG.
Where h ₁ represents the shortest distance between the generation source 30 of the film formation particle flux and the film formation region 20, and h ₂ represents the longest distance. The position at a distance of 0.9 times the shortest distance from the generation source 30 of the film-forming particle bundle means that each point on the surface of the spherical surface 31 centered on the generation source 30 is 1.1 times the longest distance. The position at the distance of means the respective points on the surface of the spherical surface 32 with the source 30 as the center. Therefore, the film formation monitor plate 20
The preferable range of the position of 8 is the spherical surface 31 and the spherical surface 32.
It can be said that it is the space between them and the outside of the film formation region 20 when viewed from the generation source 30. When the source of the film-forming particle bundle has a spread that cannot be regarded as a point or when a plurality of sources are used, the position satisfying the above distance condition from any point of the source is the film-forming monitor plate 208. Preferred as position. When the film formation monitor plate 208 is moved so as to be arranged within this range, the film thickness and physical characteristics (refractive index, uniformity, density, electric characteristics, etc.) of the monitor thin film formed on the film formation target board are set on the film formation target substrate. It can be approximated to the optical thin film to be formed. To satisfy the above first condition at the same time,
More preferable.

Third, the straight line connecting the position of the film formation monitor plate 208 and the source 30 of the film formation particle flux and the film formation monitor plate 2
At least a part of the range in which the angle φ formed by the normal to the monitor thin film formation surface of No. 08 changes within 40 ° or less, and more preferably within 30 ° or less. When the monitor thin film is formed, if the angle between the optical thin film forming direction (which coincides with the normal direction of the monitor thin film forming surface) and the flying direction of the film forming particles is greatly different, so-called oblique incidence precipitation occurs and Characteristic values such as characteristics are often different from those of the optical thin film formed on the film formation target substrate in the vicinity of the film formation particle flux axis in the film formation region. However, if it is particularly desired to match the film forming conditions near the outer edge of the film forming region, it is preferable that the angle be close to the angle formed by the flight direction of the film forming particles and the film forming direction of the optical thin film at that portion. In addition, the above-mentioned first
Alternatively, it is more preferable to simultaneously satisfy the second or both conditions.

In the present invention, the optical thin film may be any one as long as it is used for a substrate with an optical thin film for controlling light transmission or reflection characteristics. In particular, the antireflection film of various display devices is suitable because the target substrate for film formation is often large.

Further, as the optical interference type film thickness measuring device 7,
For example, a device in which a monitor plate is irradiated with a specific wavelength or white light and the reflection intensity or transmission intensity of the light is measured is used. This utilizes the fact that the state of light interference differs depending on the refractive index and film thickness of the optical thin film, and that the light reflectance and transmittance periodically change during film formation. Measure the film thickness by capturing the maximum and minimum. In this case, not only the film thickness but also the influence of the refractive index is reflected in the measurement results at the same time.In the case of an optical thin film, the optical optical path length inside the thin film should be set to a specific value, not the film thickness of the optical thin film itself. In many cases, it is rather preferable.

In the optical interference type film thickness measuring apparatus, it is preferable to control the film forming process by utilizing the fact that the intensity of the interference light changes periodically with respect to the film thickness. That is, when the optical optical path length (proportional to the product of film thickness and refractive index) in the optical thin film is an integral multiple of 1/4 times the wavelength λ of the measurement light, the intensity of the interference light has an extreme value, If film formation is stopped when this condition is satisfied, it is guaranteed that the optical optical path length in the optical thin film will be an integral multiple of 1/4 times the measurement light. Therefore, it is possible to measure the film thickness with better reproducibility than when controlling the absolute value of the intensity of the interference light.

In the present invention, it is necessary to use an optical fiber bundle 240 manufactured by bundling optical fibers for the connection between the film formation monitor plate 208 and the optical interference type film thickness measuring device 7. This is for the following reasons.

That is, when the optical fiber bundle 240 is used, the optical interference type film thickness measuring device 7 can be fixed. If the optical interference type film thickness measuring device 7 is not fixed, the following problems may occur. That is,
The optical interference type film thickness measuring device 7 is generally large and is a precision instrument. Therefore, when it is moved together with the film formation monitor plate 208, a trouble such as a deviation of the optical axis due to vibration may occur. Further, when the optical interference type film thickness measuring device 7 is moved together with the film formation monitor plate 208,
In many cases, the optical interference type film thickness measuring device 7 needs to be moved within a film forming chamber (for example, a vacuum chamber). Further, the atmosphere inside the film forming chamber is usually maintained under a specific condition (for example, a state in which a specific amount of specific substance particles is contained in a high vacuum). However, in many cases, the optical interference type film thickness measuring device 7 is capable of selecting the wavelength of light used for measurement while exchanging a plurality of interference filters by an interference filter exchanging mechanism such as a revolver. In many cases, such an interference filter replacement mechanism mechanically replaces the interference filter and may emit dust, oil, or the like. Therefore, placing such an optical interference type film thickness measuring device in the film forming chamber may adversely affect the film forming process.

If the optical interference type film thickness measuring device 7 is placed outside the film forming chamber without using the optical fiber bundle 240 and is moved in conjunction with the film forming monitor plate 208, the light is transmitted to the film forming chamber. It is necessary to provide a large window corresponding to the moving position of the film formation monitor plate 208 that allows the light to pass through in the state of being able to interfere with each other, and moreover, strictly adjust the optical axis or adjust the luminous flux each time the film is moved. In such a case, the optical path length of the light used for the measurement becomes long, and it becomes more difficult to align the optical axis or adjust the light flux. Therefore, it takes a long time to adjust the film formation monitor plate 208 when it is moved.

When the optical interference type film thickness measuring device 7 and the film formation monitor plate 208 are optically coupled with each other by using the optical fiber bundle 240, the optical interference type film thickness measuring device 7 is used because the optical fiber is mechanically flexible. The film formation monitor plate 208 can be moved while being fixed at an appropriate position. Moreover, the optical interference type film thickness measuring device 7 does not necessarily have to be placed in the film forming chamber because it is easy to seal vacuum or the like by using the optical fiber.

Optical fiber bundle 24 as a light transmission path
0 is used by bundling tens to tens of thousands of optical fibers. Materials of the optical fiber are roughly classified into three types, that is, silica glass, multi-component glass, and plastic. In the present invention, silica glass and multi-component glass are preferable, and silica glass is more preferable. Used. This is because the purpose is optical measurement of thin film,
This is because it is preferable to transmit light in the near infrared region (200 to 2000 nm) from the ultraviolet region with the least loss. Further, this is also because the NA (Numerical Aperture) is small, so that the loss due to the relationship with the film formation monitor plate described later is the smallest.

In the present invention, the optical fiber bundle 240
Both ends are processed as shown in the end view of FIG. 12 (a) or FIG. 12 (b), and the end surfaces are polished and selected according to the shape of the light source or the optical sensor, but the processing is easy. Therefore, the one shown in FIG. 12 (b) is preferable. In the figure, 37 is an optical fiber and 38 is a sealing material.

In the optical fiber bundle introduced into the vacuum in the present invention, for example, as shown in FIG. 13, a vacuum flange 40 and a seamless pipe 42 are vacuum-sealed (rolled) at a position 41 and further bundled. Insert a sealant into the end face of the optical fiber and vacuum seal (4
3 indicates a vacuum seal portion). End view at this time 12
Alternatively, as the optical fiber guide tube 36 shown in FIG. 12A or FIG. 12B, a stainless material that emits a small amount of gas in a vacuum is preferably used. With such a structure, the tip end portion 51 of the optical fiber bundle and the film formation monitor plate portion 52 can freely change the angle and position to be monitored in vacuum as shown in FIG. In FIG. 14, reference numeral 53 indicates a fixing member for fixing the optical fiber bundle tip portion 51 and the film formation monitor plate 52.

As shown in FIG. 15, an optical fiber bundle 51.
Since the light flux emitted from the end surface of the optical fiber is emitted with a certain spread due to the characteristics of the optical fiber, as a method of applying the light flux to the film formation monitor plate 52 and guiding the reflected light to the optical fiber bundle 51, for example, FIGS. ) Is available.
The method shown in FIG. 15B is a method of bringing the optical fiber bundle 51 close to the film formation monitor plate 52. In this case, it is suitable because the size can be reduced and the optical path length is short, so that fine adjustments of the optical axis and the adjustment of the light flux are not required.

In the present invention, the distance from the film formation monitor plate to the tip of the optical fiber is more preferably 30 mm or less. This is because if the thickness is 30 mm or less, it is not necessary to increase the amplification factor at the time of current-voltage conversion such as the silicon photodiode of the light receiving portion, and the accuracy is improved.

In the method shown in FIG. 15A, the luminous flux emitted from the optical fiber bundle is efficiently guided to the film formation monitor plate 52 through the lenses 54 and 55, and the light from the film formation monitor plate 52 is also efficiently guided to the optical fiber bundle 51. It is a structure that can be incident. When used in a vacuum device, the method of FIG. 15 (b), which does not require strictness in positional relationship, is more preferably used. In this case, it is preferable to use an optical fiber having a small NA as the optical fiber bundle. In the present invention, NA ≦ 0.
More preferably, it is 5. In this way, the loss due to the spread of the light flux can be reduced, and high positional accuracy between the film formation monitor plate and the tip of the optical fiber is not required. Therefore, it is preferable to use quartz glass in the present technology.

FIG. 16 shows an example of the optical fiber bundle used in the present invention. The optical fiber bundle can be used in various optical systems such as a simple array, a random mix, a simple bisection array, a random mix bisection array, and a coaxial array. Among them, the optical fiber bundle 240a of the random mix two-division array shown in FIG. 16 is preferably used.
This is because when the light source is arranged in one direction and the optical sensor is arranged in the other direction like the optical interference type film thickness meter, the uniformity of the light quantity of the two branches is very high.

In the present invention, vacuum deposition, ion plating, sputtering, ablation, etc. are preferably used as the film forming process for generating the film forming particle bundle.

The vacuum vapor deposition is, for example, a method of forming an optical thin film by heating or vapor depositing or sublimating an optical thin film material in a vacuum. The heating of the optical thin film material is performed by irradiating the surface of the optical thin film material with a charged particle beam such as an electron beam. Ion plating is, for example, vacuum vapor deposition performed on a film formation target substrate whose potential is naturally biased or forcibly biased in plasma such as glow discharge. An electrode is placed on the opposite side of the flux generating source to attract ion particles ionized in plasma. Sputtering irradiates the surface of the optical thin film material with high-energy particle beams such as ions, molecules, and atoms in a vacuum atmosphere, and directly applies the energy to the film-forming particles (atoms, molecules, or clusters) of the optical thin film material. It is released into a vacuum atmosphere without depending on heating. Also, ablation is the same energy supply using light.

All of these are means for flying the material particles of the optical thin film in a vacuum, and a direction centered on a specific direction from the film-forming particle source (for example, the normal direction of the film-forming particle bundle generation source surface). This is to generate a film-forming particle bundle that spreads radially to the inside. The direction axis, which is the center of flight of the film-forming particles, is called the film-forming particle bundle axis. Generally, the largest number of film-forming particles fly in the direction along the axis of the film-forming particle bundle, and as the distance from this axis increases, the number of film-forming particles decreases, and at the same time, the kinetic energy of the film-forming particles tends to decrease.

The kinetic energy of the film-forming particles often affects characteristics such as the refractive index of the optical thin film formed on the film-forming target substrate. Generally, the higher the kinetic energy of the film-forming particles, the higher the refractive index and the more uniform the optical thin film is formed. Further, the closer the flight direction of the film forming particles is to the forming direction of the optical thin film on the film forming target substrate, that is, the direction normal to the substrate surface, the higher the refractive index of the formed thin film. Therefore, the optical thin film formed in the central part of the film formation region (near the axis of the film formation particle flux) has a high refractive index, and the refractive index decreases as it approaches the outer edge of the film formation region. At the same time, since the number of film-forming particles is reduced as described above, the film thickness is also reduced.

In the present invention, as means for controlling the film forming process, (1) the length in the traveling direction of the film forming object substrate within the range in which the film forming object substrate or the film forming object substrate group is exposed to the film forming particle bundle Controlling means for controlling, (2) Controlling means for controlling by the time for which the film-forming target substrate or film-forming target substrate group passes through the range exposed to the film-forming particle bundle, (3) film-forming target substrate or film-forming target substrate group Control means for controlling by the amount of film forming particles that reach the range exposed to the film forming particle bundle per unit time, (4) control means for controlling by the surface temperature of the film forming target substrate or group of film forming target, and the like. is there. In each case,
It is realized by using a computer or an electronic circuit.

First, the control of the film forming process using the means (1) will be described. The film thickness of the optical thin film formed on the film formation target substrate is basically a product of the number of film formation particles per unit time of the film formation particle bundle reaching the surface of the substrate and the time when the surface is in the film formation region. Proportional. Therefore, the film thickness of the optical thin film formed on the film formation target substrate can be controlled by adjusting the size of the film formation region in the traveling direction of the substrate.

However, since the film formation target substrate is formed while moving in the film formation region, the film formation target substrate is formed while crossing the film formation particle bundle on the same surface portion. As described above, even within the film-forming particle bundle, the conditions such as the number of film-forming particles are different between the vicinity of the film-forming particle bundle axis and its periphery. Therefore, even if the portion of the substrate to be deposited that passes near the axis of the deposition particle flux during deposition and the portion that passes only the periphery of the deposition target substrate are exposed to the deposition area for the same time, the film thickness or physical The characteristics will be different. Therefore, it is generally preferable that the shape of the film-forming region is a pincushion type, like the film-forming region 20 shown in FIG. For this reason, it is preferable to correct the shape of the film formation region into a pincushion shape that makes an arc in the direction of travel of the substrate by placing a correction plate having a half-moon shape in the flight path of the film formation particles. Note that this correction plate, for example, first follows the so-called cosine law (the law that the film thickness of a film formation is proportional to the third power or fourth power of the cosine of the angle formed by the flight direction of the film formation particles and the axis of the film formation particle bundle). It is manufactured by repeating the film forming experiment until a satisfactory film thickness and refractive index distribution are obtained, and the final shape is determined. Further, it is also preferable to control the film thickness of the optical thin film by moving the correction plate up and down or in the traveling direction of the substrate.

Next, the control of the film forming process using the means (2) will be described. Specifically, this is to change the moving speed of the film formation target substrate according to the film thickness formed on the film formation monitor plate. This is to control the length of time during which the surface of the film formation target substrate is exposed to the film formation particle bundle, as in the case of (1). In general, the amount of film-forming particles flying from the film-forming source or the kinetic energy thereof changes depending on the state of the vacuum container, that is, the degree of vacuum, the state of contamination of the container, and the degassing effect from the substrate to be charged. Therefore, the variation of the film formation due to them is changed while monitoring the change of the film thickness of the monitor plate (that is, the film formation speed) so that the optical thin film can be uniformly attached by the moving speed. For example, if the film forming speed is high, the moving speed is increased, and conversely, if the film forming speed is low,
Control such as slowing down the moving speed is preferably performed.

Next, the control of the film forming process using the means (3) will be described. This is a method of adjusting the energy input to the generation source according to the monitored film thickness of the film thickness monitor plate. This makes it possible to control the number of film-forming particles per unit time reaching the film-forming region and the energy of the film-forming particles. For example, when the electron gun is used to apply energy to the part where the film-forming particles of the optical thin film material are generated, if the film-forming speed is high, the filament current of the electron gun is reduced,
If the film forming speed is low, the film forming process can be controlled by increasing the filament current of the electron gun. In this method, feedback control of the process can be performed by measuring the film thickness of the monitor plate thin film.

Next, the control of the film forming process using the means (4) will be described. Even if the number of film-forming particles reaching the film-forming region is the same, when the surface temperature of the substrate to be film-formed is high, the film-forming speed is high and the refractive index of the optical thin film formed is high.
By utilizing this property, it is possible to control the film forming process such as the film forming speed and the refractive index depending on the surface temperature of the film forming target substrate. Further, it is preferable to control the film forming process based on the film thickness itself of the monitor thin film formed on the film forming monitor plate, the film forming speed, and the like.

[0060]

EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited thereto. Example 1 A monitor formed on a film formation monitor plate by forming an optical thin film on a film formation target substrate of various sizes by making the film formation monitor plate movable inside the film formation particle bundle as shown in FIGS. 1 and 2. The optical thin film was formed on the substrate group for film formation while measuring the film thickness of the optical thin film to manufacture a substrate with an optical thin film. This substrate with an optical thin film is used as an antireflection filter of a display device, and the thin film is an optical thin film, which requires strict thin film management. The film formation process was vacuum evaporation, and transparent plastic was used as the material for the film formation target substrate. The width of the film formation region was 1 m. The distance range between the film formation monitor plate and the generation source of the film formation particle flux is a distance between the shortest distance and the longest distance between the film formation region and the generation source, and the normal direction of the film formation monitor plate and the film formation monitor. The flight directions of the film-forming particles at the position of the plate were matched.

Optical thin films were formed on the respective substrates for film formation in the following four cases. (1) As shown in FIG. 3, a substrate with an optical thin film was manufactured with a configuration in which substrate for film formation of 310 × 380 mm were arranged in two rows. At this time, the film formation monitor plate was moved to the position Y shown in FIG. 3 to measure the film thickness. When the film formation monitor plate is at the Y position, the correlation between the film thickness t _{1 of the} optical thin film formed on the film formation target substrate and the film thickness t _m of the monitor thin film when the film formation is completed is Assuming that the number of groups passing through the film formation region is n, then t _m = 0.9 × t ₁ × n. Film formation was performed using this relationship. By moving the film formation monitor plate to this position, it was possible to control the film formation process based on the measurement result of the monitor film thickness.

(2) 260 × 330 as shown in FIG.
mm and 310.times.380 mm film-forming target substrates were arranged in a row, and a substrate with an optical thin film was manufactured. At this time, the film formation monitor plate shown in FIG. 4 was moved to the X position to measure the film thickness. When the film formation monitor plate is at the X position, the correlation between the film thickness t _{1 of the} optical thin film formed on the film formation target substrate and the film thickness t _m of the monitor thin film when the film formation is completed is When the number of groups passing through the film formation region is n, t _m = 1.0
× became the t ₁ × n. Film formation was performed using this relationship. By moving the film formation monitor plate to this position,
It was possible to control the film formation process based on the measurement result of the monitor film thickness.

(3) 200 × 330 as shown in FIG.
A substrate with an optical thin film was manufactured with a structure in which the film-forming target substrates having a size of 3 mm were arranged in three rows. At this time, the film formation monitor plate shown in FIG.
The film thickness was measured by moving it to the position. When the film formation monitor plate is at the Z position, the correlation between the film thickness t _{1 of the} optical thin film formed on the film formation target substrate and the film thickness t _m of the monitor thin film when the film formation is completed is Assuming that the number of groups passing through the film formation region is n, t _m = 0.85 × t ₁ × n. Film formation was performed using this relationship. By providing the film formation monitor plate at this position, it was possible to control the film formation process based on the measurement result of the monitor film thickness.

(4) 400 × 900 as shown in FIG.
A substrate with an optical thin film was manufactured with a structure in which the substrates to be film-formed with a size of mm were arranged in one row. At this time, the film formation monitor plate shown in FIG.
The film thickness was measured by moving it to the position. When the film formation monitor plate is at the position W, the correlation between the film thickness t _{1 of the} optical thin film formed on the film formation target substrate and the film thickness t _m of the monitor thin film at the time of completion of film formation is Assuming that the number of groups passing through the film formation region is n, then t _m = 0.80 × t ₁ × n. Film formation was performed using this relationship. By providing the film formation monitor plate at this position, the monitor thin film could be formed under suitable conditions similar to those of the optical thin film formed on the film formation target substrate. Since light was introduced into the film formation monitor plate using an optical fiber, there was almost no trouble in changing the position of the film formation monitor plate.

Comparative Example 1 The same production equipment as in Example 1 was used except that the position of the film formation monitor plate was fixed at the position shown in FIGS. 9 and 10.
While measuring the film thickness of the monitor thin film, an optical thin film was formed on the substrate group to be film-formed, and a substrate with an optical thin film was manufactured. The correlation between the film thickness t _{1 of the} optical thin film formed on the film formation target substrate and the film thickness t _m of the monitor plate optical thin film when the film formation is completed depends on the number of the film formation target substrates passing through the film formation region. n, t _m = 0.
4 × t ₁ × n. Film formation was performed using this relationship. It was possible to form an optical thin film by arranging two 310 mm × 380 mm film formation target substrates in two rows, but 200 × 330
mm substrate to be deposited in three rows or 400 x 90
With the structure in which the film-forming target substrates of 0 mm are arranged in a line, the film-forming target substrate blocks the position of the film-formation monitor plate, and thus cannot be produced. Actually, physically, 450 mm x 380 mm
Although it is possible to arrange the two film-forming target substrates side by side, in order to form a sufficient film on the film-forming monitor plate, the gap between the two film-forming target substrates must be about 150 mm to 200 mm. Since it was not possible, it was a limit to arrange two 310 mm x 380 mm sheets.

Comparative Example 2 The film thickness of the monitor thin film was measured with the same production equipment as in Example 1 except that a large glass window was provided above the vacuum chamber in the moving portion of the film formation monitor plate and no optical fiber was used. On the other hand, an optical thin film was formed on the group of substrates for film formation to manufacture a substrate with an optical thin film. The correlation between the film thickness t _{1 of the} optical thin film formed on the film formation target substrate and the film thickness t _m of the monitor thin film at the time of completion of the film formation is that the number of film formation target substrates passing through the film formation region is n. Then, it was possible to form a film with almost the same relational expression. Film formation was performed by utilizing these relationships. It was possible to control the film formation process based on the measurement result of the monitor film thickness.
However, each time the size changes, the optical axis of the optical interference type film thickness measuring device and the film formation monitor plate must be precisely aligned, and it takes time to fix the moved optical interference type film thickness measuring device. It took more time to switch the product type than in the example.

[0067]

According to the apparatus for manufacturing a substrate with an optical thin film of the present invention, the film formation monitor plate and the optical interference type film thickness measuring device are optically coupled by an optical fiber, and the monitor plate is movable. Even when an optical thin film is formed on a large substrate for film formation, the optical thin film and the substrate with the optical thin film can be manufactured by using a smaller manufacturing facility.

Further, according to the apparatus for manufacturing a substrate with an optical thin film of the present invention, the degree of freedom in arranging the substrate for film formation can be increased even when the optical thin film is formed on a large substrate for film formation. The productivity of the manufacturing process of the substrate with the optical thin film can be improved.

Further, according to the apparatus for manufacturing a substrate with an optical thin film of the present invention, since the optical fiber is used, the position of the film formation monitor plate can be freely moved. Further, since the optical axis alignment or the like is not required at the time of movement, the product type can be changed more quickly than in the case where no optical fiber is used.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of an apparatus for manufacturing a substrate with an optical thin film according to an embodiment of the present invention.

FIG. 2 is a schematic configuration diagram of the apparatus of FIG. 1 viewed from a moving direction of a film formation target substrate.

FIG. 3 is a schematic plan view showing an example of preferable positions of a film formation monitor plate in the apparatus for manufacturing a substrate with an optical thin film of the present invention.

FIG. 4 is a schematic plan view showing another example of preferable positions of the film formation monitor plate in the apparatus for manufacturing a substrate with an optical thin film of the present invention.

FIG. 5 is a schematic plan view showing still another example of preferable positions of the film formation monitor plate in the apparatus for manufacturing a substrate with an optical thin film of the present invention.

FIG. 6 is a schematic plan view showing still another example of preferable positions of the film formation monitor plate in the apparatus for manufacturing a substrate with an optical thin film of the present invention.

FIG. 7 is a schematic plan view showing a preferable position range of the film formation monitor plate in the apparatus for manufacturing a substrate with an optical thin film of the present invention.

FIG. 8 is a schematic configuration diagram showing a preferable position range of the film formation monitor plate in another direction in the apparatus for manufacturing a substrate with an optical thin film of the present invention.

FIG. 9 is a schematic configuration diagram of a conventional apparatus for manufacturing a substrate with an optical thin film.

FIG. 10 is a schematic partial bottom view of the apparatus of FIG. 9 as seen from the direction of the film formation particle bundle axis.

FIG. 11 is an explanatory diagram showing a state of forming a monitor thin film on a film formation monitor plate.

12A and 12B are front views of an end face of an optical fiber bundle, respectively.

FIG. 13 is a schematic side view showing an example of a method of introducing an optical fiber bundle into a vacuum chamber.

FIG. 14 is a schematic configuration diagram showing the degree of freedom of the tip portion of the optical fiber bundle.

15A and 15B are schematic configuration diagrams showing the positional relationship between the tip portion of the optical fiber bundle and the film formation monitor plate.

FIG. 16 is a partial side view showing an example of the structure of an optical fiber bundle.

[Explanation of symbols]

1, 1a, 1b, 1c, 1d Substrate group for film formation 2 Film-forming particle flux generation site (film-forming particle generation source) 3 Optical thin film material 4a, 4b Correction plate 5 Film-forming particle bundle 6 Electron gun 7 Optical interference film Thickness measuring device 8 Deposition monitor plate 9 Deposition particle flux axis 10a, 10a ', 10b, 10b', 10c, 10
c ′, 10d, 10d ′ Substrate to be film-formed 11 Shutter 13 Film-forming particles 14 Gas molecule 16 Vacuum chamber 20 Film-forming region 30 Film-forming particle flux source 31, 32 Spherical surface 33 Conical surface 34 Point at outer edge of film-forming region 35 Straight line 36 Optical fiber guide tube 37 Optical fiber 38 Sealing material 40 Vacuum flange 41 Vacuum filtering part 42 Seamless pipe for vacuum 43 Vacuum sealing part 51 Optical fiber bundle tip part 52 Film formation monitor plate 53 Fixing of optical fiber tip part and film formation monitor plate Members 54, 55 Lenses 201a, 201b, 201c, 201d Film forming target substrate group 207 Film thickness measuring device 208 Film forming monitor plate 210, 210'210a, 210a ', 210a ",
210b, 210b ', 210b ", 210c, 210
c ′, 210c ″ Deposition target substrate 220 Deposition region 230 Deposition monitor plate moving mechanism 240, 240a Optical fiber bundle 250 Deposition target substrate moving means 260 Deposition process control means

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical indication location H01L 21/203 S 9545-4M 21/66 P 7735-4M (72) Inventor Kazuo Kikuchi Shinagawa, Tokyo 3-26 Minami-Oi, Ward, within Syncron Co., Ltd. (72) Inventor Shigeharu Matsumoto 3-26, Minami-Oi, Shinagawa-ku, Tokyo Within Syncron, Inc. (72) Inventor Shinichiro Tax Office Minami-Oi, Shinagawa-ku, Tokyo 3-2-6 In Syncron Co., Ltd.

Claims (1)

[Claims] 1. A film formation target substrate movement for moving the film formation target substrate so as to pass through a film formation particle bundle generation source and a region exposed to the film formation particle bundle generated by the film formation particle bundle generation source. Means, a film formation monitor plate capable of moving within a range including the outside of the range where the film formation target substrate is exposed to the film formation particle bundle, an optical interference type film thickness measuring device, and the optical interference type film thickness measuring device And a film formation process based on an optical fiber bundle that optically couples the film formation monitor plate and the film thickness of the monitor thin film formed on the film formation monitor plate, measured by the optical interference type film thickness measurement device. An apparatus for producing a substrate with an optical thin film, comprising: a film forming process control means for controlling.