JPH08111539A - Manufacture of photovoltaic type hgcdte infrared ray detector - Google Patents
Manufacture of photovoltaic type hgcdte infrared ray detectorInfo
- Publication number
- JPH08111539A JPH08111539A JP6270310A JP27031094A JPH08111539A JP H08111539 A JPH08111539 A JP H08111539A JP 6270310 A JP6270310 A JP 6270310A JP 27031094 A JP27031094 A JP 27031094A JP H08111539 A JPH08111539 A JP H08111539A
- Authority
- JP
- Japan
- Prior art keywords
- type
- hgcdte
- layer
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000013078 crystal Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 229910021480 group 4 element Inorganic materials 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 6
- 230000001681 protective effect Effects 0.000 abstract description 6
- 230000004913 activation Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 35
- 238000005530 etching Methods 0.000 description 8
- 229910004613 CdTe Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- HFHZKZSRXITVMK-UHFFFAOYSA-N oxyphenbutazone Chemical compound O=C1C(CCCC)C(=O)N(C=2C=CC=CC=2)N1C1=CC=C(O)C=C1 HFHZKZSRXITVMK-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光起電力型（もしくは
ＰＶ型）ＨｇＣｄＴｅ赤外線検出器の製造方法に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a photovoltaic (or PV type) HgCdTe infrared detector.
【０００２】[0002]
【従来の技術】従来の光起電力型ＨｇＣｄＴｅ赤外線検
出器は、その構造の形成方法において２種類に分類され
ていた。これについて図２、図３に示す。その１つは、
図２に示すようにプレーナ（平坦）型と呼ばれる構造で
ある（例えば、シン等：アプライド・フィジクス・レタ
ー４０巻、１９８２年９６５−９６７頁）。この構造は
基板（１）、バッファ層（２）の上に形成されたｐ型Ｈ
ｇＣｄＴｅ層（３）にボロンなどの元素をイオン注入な
どの方法により打ち込み、部分的にｎ型ＨｇＣｄＴｅ層
（４）を形成するものであった。そして、保護表面膜
（５）、ｐ型電極（６）が形成されているものである。2. Description of the Related Art Conventional photovoltaic HgCdTe infrared detectors are classified into two types according to the method of forming their structure. This is shown in FIGS. 2 and 3. One of them is
As shown in FIG. 2, it is a structure called a planar (flat) type (for example, Shin et al .: Applied Physics Letter 40, 1982, 965-967). This structure has a p-type H formed on the substrate (1) and the buffer layer (2).
An element such as boron is implanted into the gCdTe layer (3) by a method such as ion implantation to partially form the n-type HgCdTe layer (4). Then, the protective surface film (5) and the p-type electrode (6) are formed.
【０００３】あるいは、アリアス等（アプライド・フィ
ジクス・レター６２巻、１９９３年９７６−９７８頁）
によれば、インジウムなどのｎ型不純物をドープするこ
とによりｎ型ＨｇＣｄＴｅ層を形成し、さらに不純物を
ドープしないＨｇＣｄＴｅ層を形成した後に、表面保護
膜にエッチングにより窓を開け、部分的に砒素などのｐ
型不純物を注入して形成するものである。これらは、ｐ
／ｎ接合部分が大気中に露呈せず、かつＨｇＣｄＴｅ層
が平坦であることが特徴であった。Alternatively, Arias et al. (Applied Physics Letter Vol. 62, pp. 976-978, 1993)
According to the method, an n-type HgCdTe layer is formed by doping an n-type impurity such as indium, and a HgCdTe layer that is not doped with impurities is further formed. Then, a window is opened in the surface protective film by etching to partially form arsenic or the like. P
It is formed by implanting type impurities. These are p
The feature was that the / n junction portion was not exposed to the atmosphere and the HgCdTe layer was flat.
【０００４】また、もう１つは、図３に示すような構造
のもので、例えばアリアス等（ジーナル・オブ・アプラ
イド・フィジクス６９巻、１９９１年、２１４３−２１
４８頁）が示したメサ型と呼ばれるものである。すなわ
ち、基板（１）、バッファ層（２）の上にインジウムな
どのｎ型不純物によるｎ型ＨｇＣｄＴｅ層（４）を形成
後、砒素などのｐ型不純物によるｐ型ＨｇＣｄＴｅ層
（３）をさらに形成し、表面からエッチングによりｎ型
層（４）まで開口し素子分離を行い、界面・表面の保護
膜（５）を形成して作られていた。The other one has a structure as shown in FIG. 3, for example, Arias et al. (Genar of Applied Physics Vol. 69, 1991, 2143-21).
It is called the mesa type shown in page 48). That is, after the n-type HgCdTe layer (4) made of n-type impurities such as indium is formed on the substrate (1) and the buffer layer (2), the p-type HgCdTe layer (3) made of p-type impurities such as arsenic is further formed. Then, the n-type layer (4) was opened from the surface by etching to perform element isolation, and a protective film (5) for the interface / surface was formed.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記従
来技術で示した図２のプレーナ型構造では、隣接するｎ
型層同士がｐ型層を介して電気的に導通しているため、
電気的に分離されておらずｐ型領域で生成した光キャリ
アはどちらのｎ型層でも迷走してしまうという問題があ
った。したがって、素子分離が完全でないため、赤外線
の画像を同検出器から得る場合、空間分解能を低下させ
る原因となっていた。また、イオン注入を用いて形成す
る場合には、ＨｇＣｄＴｅ層の結晶にダメージを与える
ことになり、電気特性の向上は望めなかった。However, in the planar structure of FIG. 2 shown in the above-mentioned prior art, the adjacent n
Since the mold layers are electrically connected to each other through the p-type layer,
There is a problem that photo carriers generated in the p-type region which are not electrically separated from each other stray in both n-type layers. Therefore, since the element separation is not perfect, when the infrared image is obtained from the same detector, it causes a decrease in spatial resolution. In addition, when it is formed by using ion implantation, the crystals of the HgCdTe layer are damaged, and improvement of the electrical characteristics cannot be expected.
【０００６】また、上述した図３のメサ型構造では、画
素分離は確実に実施できるがエッチングによる加工精度
が悪く、エッチングによりＨｇＣｄＴｅ層の結晶にダメ
ージが入っていた。また、製造工程数についても、図２
の製造方法に比べて多くなるという問題があった。本発
明の目的は、上記課題を解決し、画素分離が完全であ
り、ｐ／ｎ接合の形成工程も１つの工程でできる光起電
力型ＨｇＣｄＴｅ赤外線検出器の製造方法を提供するこ
とにある。Further, in the above-described mesa structure of FIG. 3, the pixel separation can be surely performed, but the processing accuracy by etching is poor, and the crystals of the HgCdTe layer are damaged by the etching. Also, regarding the number of manufacturing steps, FIG.
There is a problem in that the number is larger than that in the manufacturing method. An object of the present invention is to solve the above problems, and to provide a method for manufacturing a photovoltaic HgCdTe infrared detector that has a perfect pixel separation and can perform a p / n junction formation step in one step.
【０００７】[0007]
【課題を解決するための手段】本発明は、光起電力型Ｈ
ｇＣｄＴｅ赤外線検出器の製造方法において、ＨｇＣｄ
Ｔｅ層を形成する基板の表面が２種類の結晶方位面を有
する非平坦基板を用いることを特徴とする光起電力型Ｈ
ｇＣｄＴｅ赤外線検出器の製造方法である。また、本発
明は、光起電力型ＨｇＣｄＴｅ赤外線検出器の製造方法
において、ＨｇＣｄＴｅ層の形成時に４族元素、あるい
は５族元素のどちらか１種類の元素を用いて、ＨｇＣｄ
Ｔｅ層を形成する基板の表面が２種類の結晶方位面を有
する非平坦基板上に電気特性がｐ型である領域とｎ型で
ある領域を同時に形成することを特徴とする光起電力型
ＨｇＣｄＴｅ赤外線検出器の製造方法であり、そしてこ
こで用いる４族元素としては、例えばＳｉが、５族元素
としては、例えばＡｓが用いられる。このように上記目
的を達成するため、本発明による光起電力型ＨｇＣｄＴ
ｅ赤外線検出器の製造方法においては、基板表面に２種
類の面方位が現われている非平坦基板を用い、４族元素
などのＨｇＣｄＴｅ結晶中にあって、成長もしくは処理
条件により、ｐ型もしくはｎ型のどちらか一方の電気特
性を示す不純物で、いわゆる両性不純物を用いてＨｇＣ
ｄＴｅ層を形成することにある。SUMMARY OF THE INVENTION The present invention is a photovoltaic type H
In a method for manufacturing a gCdTe infrared detector, HgCd
Photovoltaic type H, characterized in that a non-flat substrate having a Te layer forming substrate having two kinds of crystal orientation planes is used.
It is a method for manufacturing a gCdTe infrared detector. In addition, the present invention provides a method for manufacturing a photovoltaic HgCdTe infrared detector, wherein when the HgCdTe layer is formed, one element selected from the group 4 element and the group 5 element is used.
Photovoltaic HgCdTe characterized by simultaneously forming a region having p-type and a region having n-type electrical characteristics on a non-flat substrate having a substrate on which a Te layer has two types of crystal orientation planes. In the method of manufacturing an infrared detector, the group 4 element used here is, for example, Si, and the group 5 element is, for example, As. Thus, in order to achieve the above object, the photovoltaic HgCdT according to the present invention
In the method of manufacturing an e-infrared detector, a non-flat substrate in which two types of plane orientations appear on the surface of the substrate is used, and in a HgCdTe crystal such as a Group 4 element, p-type or n-type is used depending on the growth or treatment conditions. HgC, which is an impurity exhibiting electrical characteristics of either type,
Forming a dTe layer.
【０００８】[0008]
【作用】本発明において、基板表面に２種類の結晶方位
面を有する非平坦基板、すなわち基板表面に２種類の面
方位が現われている非平坦基板を用いるので、この面方
位が異なるＨｇＣｄＴｅ層では、外因性不純物の取り込
み効率と電気的活性率が異なる。このドーピング効率の
違いを利用し、２種類の方位が現れている非平坦基板を
用いると、電気特性の違いとして現れることになる。こ
のため、ドーピング効率の差の大きい面方位同士が現れ
ていれば、１つの不純物でｐ型とｎ型を同時に形成する
ことができる。In the present invention, since a non-flat substrate having two kinds of crystal orientation planes on the substrate surface, that is, a non-flat substrate having two kinds of plane orientations appearing on the substrate surface is used, the HgCdTe layer having different plane orientations is used. , The exogenous impurities uptake efficiency and electrical activation rate are different. If a non-flat substrate in which two types of orientations appear is used by utilizing this difference in doping efficiency, it will appear as a difference in electrical characteristics. Therefore, if surface orientations having large differences in doping efficiency appear, one impurity can simultaneously form p-type and n-type.
【０００９】[0009]
【実施例】次に本発明の実施例について図面を参照して
説明する。図１並びに図４（ａ）（ｂ）及び図５（ｃ）
（ｄ）に本発明による光起電力型ＨｇＣｄＴｅ赤外線検
出器の構造、製造工程を示す。まず、図１を説明する
と、表面に２種類の結晶方位面を形成した非平坦基板で
あるＧａＡｓ基板（１）にバッファ層（２）を形成す
る。その上の＜１００＞方向を矢印で示した面にはｐ型
ＨｇＣｄＴｅ層（３）、また矢印で示した＜１１１＞Ｂ
方向の面にはｎ型ＨｇＣｄＴｅ層（４）が形成されてい
る。そして保護表面膜（５）、ｐ型電極（６）が形成さ
れているものである。Next, an embodiment of the present invention will be described with reference to the drawings. 1 and 4 (a) (b) and 5 (c)
(D) shows the structure and manufacturing process of the photovoltaic HgCdTe infrared detector according to the present invention. First, referring to FIG. 1, a buffer layer (2) is formed on a GaAs substrate (1) which is a non-flat substrate having two types of crystal orientation planes formed on the surface. A p-type HgCdTe layer (3) is provided on the surface in which the <100> direction is indicated by an arrow, and <111> B indicated by an arrow.
An n-type HgCdTe layer (4) is formed on the surface in the direction. Then, the protective surface film (5) and the p-type electrode (6) are formed.
【００１０】次に、製造工程を図４（ａ）（ｂ）及び図
５（ｃ）（ｄ）で説明する。図４（ａ）に示すように、
ＨｇＣｄＴｅ形成用の基板（１）として（１００）もし
くは（１００）微傾斜面ＧａＡｓを用いた。基板（１）
にはマスク（８）とエッチングのための開口部を設けて
いる。次いで、図４（ｂ）に示すように、基板（１）の
マスクの開口部からエッチングすると（１１１）面を呈
する側面が形成される。図においては、矢印と＜１１１
＞で方向を示している。なお、ＧａＡｓ基板（１）の非
平坦化については、例えば西沢ら（半導体装置の製造方
法およびエッチング液、特公平４−７８１６７）のエッ
チング液などで容易に実施することができるものであ
る。Next, the manufacturing process will be described with reference to FIGS. 4 (a) (b) and 5 (c) (d). As shown in FIG.
As the substrate (1) for forming HgCdTe, (100) or (100) vicinal GaAs was used. Board (1)
Is provided with a mask (8) and an opening for etching. Next, as shown in FIG. 4B, etching is performed from the opening of the mask of the substrate (1) to form a side surface exhibiting a (111) plane. In the figure, the arrow and <111
> Indicates the direction. The non-planarization of the GaAs substrate (1) can be easily performed by using, for example, the etching solution of Nishizawa et al. (Method of manufacturing semiconductor device and etching solution, Japanese Patent Publication No. 4-78167).
【００１１】次いで、マスクを除去した後、非平坦基板
（１）を分子線エピタキシーなどのＨｇＣｄＴｅ成長装
置に導入し、基板の表面酸化膜を６００℃で除去する。
そして、図５（ｃ）に示すように、基板（１）からの不
純物拡散防止のためにＣｄＴｅもしくはＣｄＺｎＴｅバ
ッファ層（２）を少なくとも３μｍ以上形成する。分子
線エピタキシーでは基板温度約３００℃で形成できる。
次に、ＨｇＣｄＴｅ層の形成には、砒素（Ａｓ）をｐ型
不純物源として用いる。また、ＨｇＣｄＴｅの形成は、
ＣｄＴｅ、ＴｅおよびＨｇを母材料として基板温度約１
９０℃で形成した。そして、ＧａＡｓ基板（１）、バッ
ファ層（２）の上にｐ型ＨｇＣｄＴｅ層（３）、またｎ
型ＨｇＣｄＴｅ層（４）が形成される。Then, after removing the mask, the non-flat substrate (1) is introduced into a HgCdTe growth apparatus such as molecular beam epitaxy, and the surface oxide film of the substrate is removed at 600 ° C.
Then, as shown in FIG. 5C, at least 3 μm or more of a CdTe or CdZnTe buffer layer (2) is formed in order to prevent impurity diffusion from the substrate (1). Molecular beam epitaxy can be performed at a substrate temperature of about 300 ° C.
Next, arsenic (As) is used as a p-type impurity source for forming the HgCdTe layer. The formation of HgCdTe is
Substrate temperature about 1 with CdTe, Te and Hg as base materials
Formed at 90 ° C. Then, on the GaAs substrate (1) and the buffer layer (2), a p-type HgCdTe layer (3) and n
A type HgCdTe layer (4) is formed.
【００１２】Ａｓのドーピング量はＡｓの蒸発源温度に
より決めることができる。エリオット等（ジーナル・オ
ブ・ヴァキュームサイエンス・アンド・テクノロジーＢ
１０巻、１９９２年、１４２８−１４３１頁）による
と、（１００）の微傾斜面で１．４×１０１７ｃ
ｍ−３、（１１１）面で１．７×１０１６ｃｍ−３にド
ーピングできることがわかっている。また、分子線エピ
タキシーで形成した、故意に不純物をドープしないＨｇ
ＣｄＴｅ層の残留不純物はｎ型であり、１×１０１５ｃ
ｍ−３であることがわかっている。The doping amount of As can be determined by the temperature of the evaporation source of As. Elliott, etc. (Genal of Vacuum Science and Technology B
10 vol., 1992, pp. 1428-1431), 1.4 * 10 < 17 > c on a slightly inclined plane of (100).
It has been found that the m −3 and (111) planes can be doped to 1.7 × 10 16 cm −3 . In addition, Hg formed by molecular beam epitaxy and not intentionally doped with impurities
The residual impurities of the CdTe layer are n-type and are 1 × 10 15 c
It is known to be m −3 .
【００１３】したがって、（１００）と（１１１）面で
は、約１桁のドーピング効率の差があるため、（１０
０）面でｐ型５×１０１５ｃｍ−３のＡｓをドープした
場合、（１１１）面では本来１桁低い５×１０１４ｃｍ
−３のｐ型濃度が形成されるが、背景不純物がｎ型１×
１０１５ｃｍ−３と大きいため、その差の５×１０１４
ｃｍ−３のｎ型層が（１１１）面に形成されることにな
る。このように非平坦基板を用い、１種類の不純物をド
ーピングすることにより、図５（ｃ）に示すように、
（１１１）と（１００）面の接線上にｐ／ｎ接合の界面
が形成できた。Therefore, there is a difference in doping efficiency between the (100) and (111) planes by about one digit, so that (10
When p-type 5 × 10 15 cm −3 As is doped in the (0) plane, it is originally 5 × 10 14 cm lower in the (111) plane by one digit.
-3 p-type concentration is formed, but background impurities are n-type 1 ×
Since it is as large as 10 15 cm −3 , the difference is 5 × 10 14
The cm −3 n-type layer is formed on the (111) plane. By using the non-flat substrate in this way and doping one kind of impurities, as shown in FIG.
A p / n junction interface could be formed on the tangent of the (111) and (100) planes.
【００１４】次いで、図５（ｄ）に示すように、この上
に保護表面膜（５）のＣｄＴｅを形成し、ｐ型層（３）
の（１００）面上に開口し、ｐ型電極（６）を形成し、
さらにメサエッチされた凹部の（１１１）面にｎ型電極
（７）を形成することにより光起電力型ＨｇＣｄＴｅ赤
外線検出器の製造を行うことができる。また、基板には
（１００）以外にもドーピング効率が少なくとも１桁異
なる面方位が現れた非平坦基板であれば、同様な結果を
得ることができる。ドーピングに用いる元素も４族の両
性不純物を示す元素を用いれば、面方位に依ってはｐ型
かｎ型のどちらでもできるのでなお都合がよい。Next, as shown in FIG. 5 (d), CdTe of the protective surface film (5) is formed on the p-type layer (3).
To form a p-type electrode (6) on the (100) plane of
Furthermore, a photovoltaic HgCdTe infrared detector can be manufactured by forming an n-type electrode (7) on the (111) surface of the mesa-etched recess. Similar results can be obtained as long as the substrate is a non-flat substrate having a plane orientation different from that of (100) by at least one digit. If the element used for doping is an element showing a group 4 amphoteric impurity, either p-type or n-type can be used, which is more convenient.
【００１５】[0015]
【発明の効果】以上のように、本発明によれば、基板表
面に２種類の結晶方位面を有する非平坦基板を用ること
により、光起電力型ＨｇＣｄＴｅ赤外線検出器の製造方
法において、空間的素子分離を完全に行い、１つのドー
ピング源のみにより、同時にｐ型、ｎ型層を形成でき
る。そして、空間分解能の低下がないきわめて良質な画
像の撮影が可能となる。また、１成長工程だけでｐ／ｎ
接合の作製が行えるため、作製に要する時間を短縮する
ことができるという効果を奏するものである。As described above, according to the present invention, by using a non-flat substrate having two kinds of crystal orientation planes on the substrate surface, in the method of manufacturing a photovoltaic HgCdTe infrared detector, a space is provided. The element isolation can be completely performed, and the p-type and n-type layers can be simultaneously formed with only one doping source. Then, it is possible to capture an extremely high-quality image without deterioration in spatial resolution. In addition, p / n only in one growth process
Since the bonding can be manufactured, the time required for manufacturing can be shortened.
【図１】 本発明による光起電力型ＨｇＣｄＴｅ赤外線
検出器の構造を示す図。FIG. 1 is a diagram showing the structure of a photovoltaic HgCdTe infrared detector according to the present invention.
【図２】 従来のプレーナ型ＨｇＣｄＴｅ赤外線検出器
の構造を示す図。FIG. 2 is a diagram showing a structure of a conventional planar type HgCdTe infrared detector.
【図３】 従来のメサ型ＨｇＣｄＴｅ赤外線検出器の構
造を示す図。FIG. 3 is a diagram showing a structure of a conventional mesa-type HgCdTe infrared detector.
【図４】 本発明の実施例である赤外線検出器の製造工
程（ａ）（ｂ）を示す図。FIG. 4 is a diagram showing manufacturing steps (a) and (b) of an infrared detector that is an embodiment of the present invention.
【図５】 本発明の実施例である赤外線検出器の製造工
程で［図４］に続く工程（ｃ）（ｄ）を示す図。FIG. 5 is a diagram showing steps (c) and (d) following [FIG. 4] in the manufacturing process of the infrared detector that is the embodiment of the present invention.
１ ＧａＡｓ基板 ２ ＣｄＴｅバッファ層 ３ ｐ型ＨｇＣｄＴｅ層 ４ ｎ型ＨｇＣｄＴｅ層 ５ 表面保護層 ６ ｐ型電極 ７ ｎ型電極 ８ マスク 1 GaAs substrate 2 CdTe buffer layer 3 p-type HgCdTe layer 4 n-type HgCdTe layer 5 surface protective layer 6 p-type electrode 7 n-type electrode 8 mask
Claims (2)
製造方法において、ＨｇＣｄＴｅ層を形成する基板の表
面が２種類の結晶方位面を有する非平坦基板を用いるこ
とを特徴とする光起電力型ＨｇＣｄＴｅ赤外線検出器の
製造方法。1. A method of manufacturing a photovoltaic HgCdTe infrared detector, characterized in that a non-flat substrate having a HgCdTe layer on the surface of which has two types of crystal orientation planes is used. Manufacturing method of infrared detector.
製造方法において、ＨｇＣｄＴｅ層の形成時に４族元
素、あるいは５族元素のどちらか１種類の元素を用い
て、ＨｇＣｄＴｅ層を形成する基板の表面が２種類の結
晶方位面を有する非平坦基板上に電気特性がｐ型である
領域とｎ型である領域を同時に形成することを特徴とす
る光起電力型ＨｇＣｄＴｅ赤外線検出器の製造方法。2. A method for manufacturing a photovoltaic HgCdTe infrared detector, wherein the surface of the substrate on which the HgCdTe layer is formed by using one of Group 4 element and Group 5 element when forming the HgCdTe layer. 2. A method of manufacturing a photovoltaic HgCdTe infrared detector, characterized in that a region having electric characteristics of p-type and a region having electric characteristics of n-type are simultaneously formed on a non-flat substrate having two types of crystal orientation planes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6270310A JPH08111539A (en) | 1994-10-07 | 1994-10-07 | Manufacture of photovoltaic type hgcdte infrared ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6270310A JPH08111539A (en) | 1994-10-07 | 1994-10-07 | Manufacture of photovoltaic type hgcdte infrared ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08111539A true JPH08111539A (en) | 1996-04-30 |
Family
ID=17484501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6270310A Pending JPH08111539A (en) | 1994-10-07 | 1994-10-07 | Manufacture of photovoltaic type hgcdte infrared ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08111539A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116482150A (en) * | 2023-06-25 | 2023-07-25 | 浙江珏芯微电子有限公司 | Tellurium-cadmium-mercury doping activation rate evaluation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346279A (en) * | 1989-07-03 | 1991-02-27 | Santa Barbara Res Center | Hetero junction photodiode |
| JPH04313267A (en) * | 1991-04-03 | 1992-11-05 | Mitsubishi Electric Corp | Infrared rays detector |
-
1994
- 1994-10-07 JP JP6270310A patent/JPH08111539A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346279A (en) * | 1989-07-03 | 1991-02-27 | Santa Barbara Res Center | Hetero junction photodiode |
| JPH04313267A (en) * | 1991-04-03 | 1992-11-05 | Mitsubishi Electric Corp | Infrared rays detector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116482150A (en) * | 2023-06-25 | 2023-07-25 | 浙江珏芯微电子有限公司 | Tellurium-cadmium-mercury doping activation rate evaluation method |
| CN116482150B (en) * | 2023-06-25 | 2023-09-12 | 浙江珏芯微电子有限公司 | Tellurium-cadmium-mercury doping activation rate evaluation method |
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