JPH0810635B2 - Plasma processing device - Google Patents
Plasma processing deviceInfo
- Publication number
- JPH0810635B2 JPH0810635B2 JP61304587A JP30458786A JPH0810635B2 JP H0810635 B2 JPH0810635 B2 JP H0810635B2 JP 61304587 A JP61304587 A JP 61304587A JP 30458786 A JP30458786 A JP 30458786A JP H0810635 B2 JPH0810635 B2 JP H0810635B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- plasma
- laser light
- plasma processing
- spark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Plasma Technology (AREA)
Description
【発明の詳細な説明】 〔概要〕 本発明は誘導放電形高周波プラズマ装置等におけるプ
ラズマ処理装置において、 スパークプラグのスパッタリングによってプラズマが
汚染されてしまう従来装置の問題点を解決するため、 集光されたレーザ光の絶縁破壊を利用してプラズマ点
火することにより、 プラズマを汚染することなく点火でき、しかも、プラ
ズマを均一に発生せしめ得るようにしたものである。DETAILED DESCRIPTION OF THE INVENTION [Outline] The present invention is directed to a plasma processing apparatus in an induction discharge type high frequency plasma apparatus or the like, in order to solve the problem of the conventional apparatus in which the plasma is contaminated by the spark plug sputtering. By igniting the plasma by utilizing the dielectric breakdown of the laser light, the plasma can be ignited without being contaminated, and the plasma can be uniformly generated.
本発明はプラズマ処理装置、特に、プラズマCVD装置
等に用いられる誘導放電形高周波プラズマ処理装置に関
する。一般に、プラズマCVD装置では微細なウエハを成
膜処理することから、チャンバ内は汚染されることな
く、常に清浄な状態に保たれていることが望まれる。The present invention relates to a plasma processing apparatus, and more particularly to an induction discharge type high frequency plasma processing apparatus used in a plasma CVD apparatus or the like. Generally, in a plasma CVD apparatus, since a fine wafer is subjected to film formation processing, it is desirable that the inside of the chamber be kept clean without being contaminated.
第2図は従来の誘導放電形高周波プラズマ装置におけ
るプラズマ処理装置の一例の概略図を示す。1はチャン
バで、周知の通りにガス導入及び排気が行なわれる。2
は高周波発生装置で、チャンバ1の外周に取付けられて
いる。HFは高周波電源である。3はスパークプラグで、
チャンバ1の例えば上面側にチャンバ1内に突出して取
付けられている。4はウエハであり、チャンバ1内に設
置されている。FIG. 2 shows a schematic view of an example of a plasma processing apparatus in a conventional induction discharge type high frequency plasma apparatus. Reference numeral 1 denotes a chamber in which gas is introduced and exhausted as is well known. Two
Is a high frequency generator and is attached to the outer periphery of the chamber 1. HF is a high frequency power supply. 3 is a spark plug,
For example, the upper surface side of the chamber 1 is attached so as to project into the chamber 1. Reference numeral 4 denotes a wafer, which is installed in the chamber 1.
ここで、高周波電源HFにより高周波発生装置2におい
て高周波が発生され、スパークプラグ3によりスパーク
が発生され、これにより、チャンバ1内においてプラズ
マ点火が行なわれる。チャンバ1内ではガス導入及び排
気が行なわれ、周知の如くプラズマCVDによってウエハ
4の成膜が行なわれる。Here, a high frequency is generated in the high frequency generator 2 by the high frequency power supply HF, and a spark is generated by the spark plug 3, whereby plasma ignition is performed in the chamber 1. Gas is introduced and exhausted in the chamber 1, and the wafer 4 is formed by plasma CVD as is well known.
前記従来装置では、プラズマ点火をスパークプラグ3
のスパークによって行なっているため、経年変化によっ
てスパークプラグ3が摩耗してくると、スパークプラグ
3の金属粒子が飛散してプラズマに入り、プラズマが汚
染されてしまう問題点があった。又、このものは、チャ
ンバ1内のプラズマ発生個所にスパークプラグ3が突出
しているので、チャンバ1内のプラズマが均一にならな
い問題点があった。In the conventional device, plasma ignition is performed by the spark plug 3
However, when the spark plug 3 wears due to aging, the metal particles of the spark plug 3 scatter and enter the plasma, which contaminates the plasma. In addition, since the spark plug 3 protrudes from the plasma generation point in the chamber 1, this has a problem that the plasma in the chamber 1 is not uniform.
本発明になる誘電形高周波プラズマ処理装置は、ガス
導入口及びガス排出口を有するチャンバと、該チャンバ
の外周に取付けた高周波発生装置を有する誘電形高周波
プラズマ処理装置において、 該チャンバ内にレーザ光を集光せしめるレーザ発生装
置を設け、レーザ光の集光部におけるレーザ光による絶
縁破壊によってスパークを発生させてプラズマ点火を行
うように構成してなる。A dielectric high-frequency plasma processing apparatus according to the present invention is a dielectric high-frequency plasma processing apparatus having a chamber having a gas inlet and a gas outlet and a high-frequency generator attached to the outer periphery of the chamber. A laser generator for condensing the laser light is provided, and a spark is generated by dielectric breakdown by the laser light in the condensing portion of the laser light to perform plasma ignition.
集光したレーザ光の絶縁破壊によってスパークを発生
させ、プラズマ点火を行なう。Spark is generated by dielectric breakdown of the focused laser light, and plasma ignition is performed.
第1図は本発明になる誘導放電形高周波プラズマのプ
ラズマ処理装置の一実施例の概略図を示し、同図中、第
2図と同一構成部分には同一番号を付してその説明を省
略する。同図中、5はチャンバで、例えば石英ガラス等
にて形成されており、その上部に石英ガラス又は一般の
ガラスで構成された窓6が設けられている。7はレーザ
光発生装置で、尖頭出力が少なくとも10MW程度の例えば
エキシマレーザ光9を発生し、このレーザ光9がレンズ
8で集束されて窓6を介してチャンバ5内に到達するよ
うに構成されている。FIG. 1 is a schematic view of an embodiment of the plasma processing apparatus for induction discharge type high frequency plasma according to the present invention. In FIG. 1, the same components as those in FIG. To do. In the figure, reference numeral 5 denotes a chamber, which is made of, for example, quartz glass or the like, and a window 6 made of quartz glass or general glass is provided above the chamber. Reference numeral 7 denotes a laser light generator which is configured to generate, for example, an excimer laser light 9 having a peak output of at least about 10 MW, and the laser light 9 is focused by a lens 8 and reaches the chamber 5 through a window 6. Has been done.
レーザ光発生装置7から発生された10MW程度のレーザ
光9はレンズ8で集束され、窓6を介してチャンバ5内
に至る。チャンバ5内においてレーザ光9の焦点では絶
縁破壊が起り、スパーク(10)が発生する。このスパー
ク10によってチャンバ5内においてプラズマ点火が行な
われる。The laser light 9 of about 10 MW generated by the laser light generator 7 is focused by the lens 8 and reaches the chamber 5 through the window 6. In the chamber 5, dielectric breakdown occurs at the focal point of the laser light 9 and a spark (10) occurs. Plasma is ignited in the chamber 5 by the spark 10.
この場合、プラズマ点火はレーザ光9の焦点における
絶縁破壊によって生じるスパークによって行なわれるた
め、第2図に示す従来装置のスパークプラグ3のスパッ
タリングによって生じるスパークのようにプラズマが汚
染されることはない。又、チャンバ5のプラズマ発生個
所に第2図に示す従来装置のスパークプラグのような突
出するものがないので、広い範囲にわたって等電位面を
形成でき、プラズマの均一性を保持できる。In this case, the plasma ignition is performed by the spark generated by the dielectric breakdown at the focal point of the laser beam 9, so that the plasma is not contaminated unlike the spark generated by the sputtering of the spark plug 3 of the conventional apparatus shown in FIG. Further, since there is no projecting portion in the plasma generating portion of the chamber 5 unlike the spark plug of the conventional apparatus shown in FIG. 2, an equipotential surface can be formed over a wide range and the uniformity of plasma can be maintained.
本発明によれば、レーザ光の絶縁破壊によってスパー
クを発生させているので、従来装置のようなスパークプ
ラグの金属粒子の飛散によるプラズマ汚染を生じること
なくプラズマ点火を行ない得、又、チャンバに窓を設け
るだけで済み、従来装置のようにチャンバ内にスパーク
プラグのようなものを設ける必要がないので、チャンバ
の構造を簡単にでき、チャンバを小型に構成し得、更
に、チャンバ内には従来装置のような突出部分がないの
で、広い範囲にわたって等電位面を形成でき、プラズマ
の均一性を保持できる等の特長を有する。According to the present invention, since the spark is generated by the dielectric breakdown of the laser light, plasma ignition can be performed without causing plasma contamination due to the scattering of metal particles of the spark plug as in the conventional device, and the window to the chamber is provided. Since it is not necessary to provide something like a spark plug in the chamber unlike the conventional device, the structure of the chamber can be simplified and the chamber can be configured in a small size. Since it does not have a protruding portion unlike the device, it has features such that an equipotential surface can be formed over a wide range and plasma uniformity can be maintained.
第1図は本発明装置の一実施例の概略図、 第2図は従来装置の一例の概略図である。 図において、 2は高周波発生装置、4はウエハ、5はチャンバ、6は
窓、7はレーザ光発生装置、8はレンズ、9はレーザ
光、10はスパークである。FIG. 1 is a schematic view of an embodiment of the device of the present invention, and FIG. 2 is a schematic view of an example of a conventional device. In the figure, 2 is a high frequency generator, 4 is a wafer, 5 is a chamber, 6 is a window, 7 is a laser beam generator, 8 is a lens, 9 is a laser beam, and 10 is a spark.
Claims (1)
バと、該チャンバの外周に取付けた高周波発生装置を有
する誘電形高周波プラズマ処理装置において、 該チャンバ内にレーザ光を集光せしめるレーザ発生装置
を設け、レーザ光の集光部におけるレーザ光による絶縁
破壊によってスパークを発生させてプラズマ点火を行う
ように構成したことを特徴とする誘電形高周波プラズマ
処理装置。1. A dielectric high-frequency plasma processing apparatus having a chamber having a gas inlet and a gas outlet, and a high-frequency generator attached to the outer periphery of the chamber, wherein the laser generator concentrates laser light in the chamber. The dielectric high-frequency plasma processing apparatus is characterized in that a spark is generated by dielectric breakdown due to laser light in a laser light condensing portion to perform plasma ignition.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61304587A JPH0810635B2 (en) | 1986-12-19 | 1986-12-19 | Plasma processing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61304587A JPH0810635B2 (en) | 1986-12-19 | 1986-12-19 | Plasma processing device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63158798A JPS63158798A (en) | 1988-07-01 |
JPH0810635B2 true JPH0810635B2 (en) | 1996-01-31 |
Family
ID=17934789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61304587A Expired - Lifetime JPH0810635B2 (en) | 1986-12-19 | 1986-12-19 | Plasma processing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0810635B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020225920A1 (en) | 2019-05-09 | 2020-11-12 | Sppテクノロジーズ株式会社 | Plasma ignition method and plasma generation device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2847056B2 (en) * | 1995-12-15 | 1999-01-13 | アプライド マテリアルズ インコーポレイテッド | Plasma igniter for semiconductor manufacturing equipment |
JP4799748B2 (en) * | 2001-03-28 | 2011-10-26 | 忠弘 大見 | Microwave plasma process apparatus, plasma ignition method, plasma formation method, and plasma process method |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2174678B1 (en) * | 1972-03-06 | 1975-08-29 | Commissariat Energie Atomique | |
DE3342531A1 (en) * | 1983-11-24 | 1985-06-05 | Max Planck Gesellschaft | METHOD AND DEVICE FOR GENERATING SHORT-LASTING, INTENSIVE IMPULSES OF ELECTROMAGNETIC RADIATION IN THE WAVELENGTH RANGE UNDER ABOUT 100 NM |
-
1986
- 1986-12-19 JP JP61304587A patent/JPH0810635B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020225920A1 (en) | 2019-05-09 | 2020-11-12 | Sppテクノロジーズ株式会社 | Plasma ignition method and plasma generation device |
TWI868128B (en) * | 2019-05-09 | 2025-01-01 | 日商Spp科技股份有限公司 | Plasma ignition method and plasma generating device |
Also Published As
Publication number | Publication date |
---|---|
JPS63158798A (en) | 1988-07-01 |
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