JPH08102463A - Integrated circuit, its manufacture and its thin film forming equipment - Google Patents

Abstract

PURPOSE: To obtain a low resistance integrated circuit of high quality which is excellent in resistance to electromigration(EM), step coverage, and filling property, by using copper wiring layer. CONSTITUTION: In an integrated circuit wherein a wiring layer 2 is formed on a substrate 1 via a substratum layer 3 constituted of a plurality of layers, copper or copper alloy is used as the wiring layer 2. The substratum layer 3 is constituted of, from the substrate 1 to the wiring layer 2, an adhesive layer 31 (a) composed of titanium or the like, a barrier layer 32 (a) composed of TiN, TiWN, etc., and a wiring substratum layer 33 (a) composed of metal which is easy to alloy with the copper of the wiring layer 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a large-scale integrated circuit in which a wiring layer made of copper or a copper alloy is formed on a substrate through an underlayer composed of a plurality of layers, a manufacturing method thereof, and a thin film formation thereof. It relates to the device.

[0002]

2. Description of the Related Art Conventionally, aluminum alloys have been used as wiring films for semiconductor integrated circuits. However, when the design rule of semiconductors becomes submicron due to higher integration density, the current aluminum In the wiring film using, the wiring resistance becomes large, which causes a wiring delay. Therefore, there is a demand for a method for forming a wiring film using copper, which has low resistance, and a manufacturing apparatus therefor.

FIG. 24 is a sectional view showing the structure of a conventional integrated circuit shown in, for example, "Semicon Kansai-Kyoto Technical Seminar 90 Lecture Proceedings" (June 22.90). In the figure, 1 is a silicon substrate, 4 is an insulating layer, 5 is a contact hole, 41 is a wiring layer of aluminum-silicon-copper alloy, and 40 is a barrier layer of titanium nitride. The integrated circuit is formed by a method such as a sputtering method or a CVD method.
It is formed on the silicon substrate 1.

FIG. 25 shows, for example, the Journal of Vacuum Scienc.
FIG. 3 is a schematic configuration diagram showing a conventional magnetron type sputtering apparatus shown in e and Technology A Volume 3, No. 2, 1985. In the figure, 1 is a substrate, 201 is a vacuum chamber, 203 is a target arranged to face the substrate 1, 206 is a shutter arranged between the substrate 1 and the target 203,
Reference numeral 204 is an exhaust system for exhausting the inside of the vacuum chamber 201, 205 is a gas introducing system for introducing argon or the like into the vacuum chamber 201, 20
Reference numeral 7 is a target holder that houses a magnet.

Next, the operation of the above configuration will be described.
First, after the gas in the vacuum chamber 201 is exhausted by the exhaust system 204, a gas such as nitrogen gas and argon is introduced into the vacuum chamber 201 by the gas introduction system 205, and then formed of a vapor deposition material such as titanium. When a direct current or a high frequency voltage is applied to the target 203 on the substrate 1 covered with the wiring barrier film, plasma is formed between the target 203 and the substrate 1. At this time, the magnet in the target holder 207 spirally rotates the electrons in the plasma to promote plasma generation. The argon ions generated in this plasma are accelerated by the bias voltage and collide with the target 203 to sputter the target material, and the titanium vapor deposition material is used as the substrate 1 in the nitrogen gas atmosphere.
A barrier film for titanium nitride wiring is formed by adhering to the above.

FIG. 26 is a cross-sectional view of a high aspect contact hole having aluminum vapor-deposited by the above-mentioned conventional magnetron type sputtering apparatus. In the figure, 220 is a contact hole having a hole diameter of 0.5 μm and a depth of 2.0 μm. 221, 222, and 223 are a wiring adhesion layer, a wiring barrier layer, and a wiring layer, which are formed by vapor deposition of titanium, titanium nitride, and aluminum alloy, respectively. As can be seen from this figure, the film thickness at the bottom of the contact hole is thinner than the film thickness of the flat part other than the contact hole because shadows are formed by the growth of overhangs. As described above, the step coverage and bottom coverage (ratio of the film thickness deposited on the bottom of the contact hole to the surface film thickness of the wafer) of the magnetron type sputtering apparatus currently in practical use are reaching their limits.

[0007]

Since the conventional integrated circuit is constructed as described above, aluminum, which is a wiring film material, has a wiring width of about 1 μm or less with the miniaturization and high integration of LSI. , The wiring resistance cannot be ignored,
Electromigration (E) is a problem in that wiring delay occurs and current density increases due to miniaturization.
There was a problem that M) became a problem. Also, L
With the miniaturization and high integration of the SI, it becomes impossible to secure good step coverage in the contact hole, and it is impossible to suppress the mutual diffusion between the silicon substrate and the wiring layer. There was a problem that it could not be embedded.

The present invention has been made to solve the above problems and uses a copper or copper alloy wiring layer,
The purpose is to obtain a high-quality integrated circuit having low resistance, excellent electromigration (EM) resistance, good step coverage, and hole filling, and this copper wiring layer can be formed efficiently on the surface of the substrate. It is an object to obtain a manufacturing method and a thin film forming apparatus.

[0009]

In the integrated circuit according to claim 1 of the present invention, the wiring layer is made of copper or a copper alloy,
The underlayer is composed of an adhesion layer, a barrier layer, and a wiring underlayer made of a metal that easily forms an alloy with copper or a copper alloy of the wiring layer from the substrate toward the wiring layer.

In the integrated circuit according to claim 2 of the present invention, the wiring layer is made of copper or a copper alloy, and the wiring underlayer contained in the underlayer is selected from the group consisting of titanium, silicon, aluminum and germanium. It is composed of a copper alloy formed of at least one metal and copper.

In the integrated circuit according to claim 3 of the present invention, the wiring layer is made of copper or a copper alloy, and the wiring underlayer contained in the underlayer is selected from the group consisting of titanium, silicon, aluminum and germanium. It is composed of a copper alloy formed of at least one metal and copper, and the composition of at least one metal selected from the group of titanium, silicon, aluminum, and germanium is copper as it approaches the wiring layer. It has a structure that gradually decreases with respect to.

An integrated circuit according to a fourth aspect of the present invention is the integrated circuit according to any one of the first to third aspects, in which the wiring layer is made of copper or a copper alloy and the barrier layer is included in the underlayer. The layer is composed of a titanium nitride (TiN _x ) thin film layer in which the composition X changes from the substrate toward the wiring layer.

An integrated circuit according to a fifth aspect of the present invention is the integrated circuit according to any one of the first to third aspects, in which the wiring layer is made of copper or a copper alloy and the barrier layer is included in the underlayer. The layers are formed in the order of a titanium layer, a dititanium nitride layer, and a titanium nitride layer from the substrate toward the wiring layer.

According to a sixth aspect of the present invention, in the integrated circuit according to any one of the first to third aspects, the wiring layer is made of copper or a copper alloy, and the barrier included in the underlayer. The layers were formed in this order from the substrate toward the wiring layer: a titanium layer, a titanium nitride (TiN _x ) layer in which the nitrogen composition was gradually increased relative to the titanium composition, and finally a titanium nitride (TiN) layer. It is a thing.

According to a seventh aspect of the present invention, in a thin film forming apparatus for an integrated circuit, an ion beam source irradiates ions of 1 to 500 (μA / cm ² ) at the time of forming a wiring layer of copper or copper alloy, and the substrate temperature is By repeating a temperature cycle of temperature increase and temperature decrease by the control mechanism, the copper and copper alloy wiring layers are formed.

According to an eighth aspect of the present invention, there is provided a thin film forming apparatus for an integrated circuit, wherein an inert gas ion is irradiated from a gas ion source when a wiring layer made of copper or a copper alloy is formed,
Copper and copper alloys are vapor-deposited while irradiating ions with an ion beam source, and a substrate temperature control mechanism repeats a temperature cycle of heating and cooling to form a wiring layer of copper or a copper alloy.

A thin film forming apparatus for an integrated circuit according to claim 9 of the present invention is the thin film forming apparatus for an integrated circuit according to claim 7 or 8, wherein a magnetic field application type ion beam source is used as an ion beam source, A magnetic field application type gas ion source is used as the source.

A thin film forming apparatus for an integrated circuit according to a tenth aspect of the present invention is the thin film forming apparatus for an integrated circuit according to the seventh or eighth aspect, wherein the substrate heating mechanism and the substrate cooling mechanism in the substrate temperature control mechanism are respectively The substrate rotating mechanism is provided with a mechanism that can move up and down independently, and a mechanism that reverses the rotation direction for each rotation.

The thin film forming apparatus for an integrated circuit according to claim 11 of the present invention is the thin film forming apparatus for an integrated circuit according to claim 7 or 8, wherein the substrate transfer mechanism is a stepped horseshoe-shaped substrate holder and a stepped substrate. It is equipped with a carrying fork.

A thin film forming apparatus for an integrated circuit according to a twelfth aspect of the present invention is the thin film forming apparatus for an integrated circuit according to the eleventh aspect, wherein the substrate transfer fork of the substrate transfer mechanism is made of synthetic resin at a contact portion with the substrate. It is coated.

A thin film forming apparatus for an integrated circuit according to a thirteenth aspect of the present invention is the thin film forming apparatus for an integrated circuit according to the eleventh aspect, wherein the substrate carrying fork of the substrate carrying mechanism has a hollow structure.

According to a fourteenth aspect of the present invention, in an integrated circuit manufacturing method, an ion beam source is used to produce copper and at least one metal selected from the group consisting of alloy elements titanium, silicon, aluminum and germanium. A wiring underlayer made of a copper alloy is formed while mixed vapor deposition is performed.

According to a fifteenth aspect of the present invention, in the method of manufacturing an integrated circuit, while sequentially controlling the amount of nitrogen gas introduced in the vicinity of the substrate in the vacuum chamber, the substrate is irradiated with ions by the ion beam source. Titanium is vapor-deposited to form a barrier layer included in an underlayer made of a titanium nitride (TiN _x ) thin film layer in which the composition X changes.

According to a sixteenth aspect of the present invention, in the method of manufacturing an integrated circuit, the amount of the mixed gas of nitrogen gas or the mixed gas containing nitrogen element introduced into the vicinity of the substrate in the vacuum chamber is sequentially controlled, and the substrate is added to the substrate. Titanium nitride (Ti) whose composition X changes by irradiating an inert gas ion and irradiating the substrate with ions by an ion beam source while depositing titanium.
N _X ) The barrier layer is formed in the underlayer composed of a thin film layer.

In the integrated circuit manufacturing method according to the seventeenth aspect of the present invention, the ion beam source is used to irradiate the gas layer with the inert gas ions when the wiring layer is formed.
A copper or copper alloy wiring layer is formed by irradiating ions on a substrate to deposit copper and a copper alloy, and continuously raising the substrate temperature from room temperature to the reflow start temperature when forming the wiring layer. is there.

According to the eighteenth aspect of the present invention, in the method of manufacturing an integrated circuit, the substrate is irradiated with ions by the ion beam source while the inert gas ions are irradiated by the gas ion source during the formation of the copper and copper alloy wiring layers. Then, copper or copper alloy is vapor-deposited, and the wiring layer is deposited to a predetermined film thickness at room temperature, then heated to the reflow start temperature, cooled to room temperature again, and deposited to a predetermined film thickness. The copper or copper alloy wiring layer is formed by repeating the above cycle.

[0027]

In the integrated circuit according to the first aspect of the present invention, since copper or a copper alloy is used as the wiring layer, a wiring layer having low resistance and excellent electromigration (EM) resistance can be formed, and the integrated circuit is integrated. Even if the adhesion layer and the barrier layer in the underlayer of the circuit are thinned, they have good electrical contact and barrier properties. In addition, since the wiring underlayer in the underlayer is a metal that easily forms an alloy with the wiring layer, when the wiring layer is formed, it reacts with copper or a copper alloy in the wiring layer to form an alloy, thereby melting the melting point of the wiring layer. Lower.

In the integrated circuit according to claim 2 or claim 3 of the present invention, the wiring underlayer in the underlayer of the integrated circuit is at least one metal selected from the group consisting of titanium, silicon, aluminum and germanium. Since it is a copper alloy formed of copper and copper, it reacts with copper in the wiring layer to form an alloy when the wiring layer is formed, thereby lowering the melting point of the wiring layer.

In the integrated circuit according to any one of claims 4 to 6 of the present invention, in the integrated circuit according to any one of claims 1 to 3, the barrier layer in the underlayer of the integrated circuit is a thin film. Electrical contact and barrier properties are good

In the thin film forming apparatus according to the seventh aspect of the present invention, the substrate temperature control mechanism includes the substrate heating mechanism and the substrate cooling mechanism, so that the temperature controllability of the substrate temperature during film formation is enhanced. . Further, since the vapor of the vapor deposition material is ionized by the ion beam source of the thin film forming apparatus of the integrated circuit and the kinetic energy is given to the vaporized vapor by the accelerating means, the copper having a low resistance and a low resistance contact is provided. A wiring layer can be formed. Furthermore, by irradiating 1 to 500 (μA / cm ² ) of ions with an ion beam source at the time of forming the wiring layer, and repeating a temperature cycle of raising and lowering the temperature by a substrate temperature control mechanism, copper or a copper alloy which is a wiring material. Reflow can be promoted, a wiring layer can be formed with good filling properties even for fine contact holes, and since it has high reactivity, a barrier layer such as TiN having good electrical contact and barrier properties can be formed. Can be formed.

In the thin film forming apparatus according to the eighth aspect of the present invention, the substrate temperature control mechanism includes the substrate heating mechanism and the substrate cooling mechanism, so that the temperature controllability of the substrate temperature during film formation is enhanced. . Further, since the vapor of the vapor deposition material is ionized by the ion beam source of the thin film forming apparatus of the integrated circuit and the kinetic energy is given to the vaporized vapor by the accelerating means, the copper having a low resistance and a low resistance contact is provided. A wiring layer can be formed. Also, during the formation of the wiring layer, copper and copper alloys are vapor-deposited while irradiating the substrate with the ion beam source while irradiating the inert gas ions with the gas ion source, and the substrate temperature control mechanism heats and lowers the temperature cycle. By repeating the above, it is possible to promote reflow of the wiring material copper and copper alloy, form a wiring layer with a good filling property even for a fine contact hole, and further to prevent nitrogen gas introduced in the vicinity of the substrate. By irradiating inert gas ions from the gas ion source to activate and deposit on the substrate, the reaction efficiency with vapor of the deposition material is improved, and a barrier layer such as TiN having good electrical contact and barrier properties is formed. Can be formed.

According to a ninth aspect of the present invention, there is provided a thin film forming apparatus for an integrated circuit according to the seventh aspect, wherein the thin film forming apparatus for the integrated circuit comprises a magnetic field application type ion beam. The source is provided with a magnetic field applying means for increasing the plasma density of glow discharge as an ionizing means, and as the arrangement thereof, a magnet for giving a magnetic field is arranged around the ionization part and on the central axis of the ionization part to rotate electrons. Since a magnetic flux density of several hundred Gauss can be efficiently applied to the ionization space between the electron beam emitting filament and the crucible, the vapor of the vapor deposition material can be ionized with extremely high ionization efficiency. Further, the magnetic field application type gas ion source is provided with a magnetic field application means as a gas ionization means, and as the arrangement thereof, a magnet for applying a magnetic field is arranged around the ionization part and on the central axis of the ionization part, whereby an electron beam is generated. Since a magnetic flux density of about several hundred Gauss can be efficiently applied to the ionization space inside the electron beam extraction electrode so as to allow rotational movement, the ionization efficiency can be increased.

According to the thin film forming apparatus for an integrated circuit of the tenth aspect of the present invention, in the thin film forming apparatus for the integrated circuit according to the seventh or eighth aspect, the substrate heating mechanism and the substrate cooling mechanism are independent of each other. By providing a mechanism that can move up and down, the substrate heating mechanism or the substrate cooling mechanism can be brought close to or in contact with the substrate when the substrate temperature is raised or lowered, and the substrate temperature can be raised or lowered in a shorter time. It can be performed with good controllability. Further, since the substrate rotating mechanism is provided with a mechanism for reversing the rotating direction for each rotation, even if the substrate heating mechanism and the substrate cooling mechanism are provided, the device structure does not become complicated, and the device can be easily rotated in one direction. The same effect of substrate rotation as in the case of continuous rotation can be obtained.

According to an eleventh aspect of the present invention, there is provided a thin film forming apparatus for an integrated circuit according to the seventh or eighth aspect, wherein the stepped horseshoe-shaped substrate holder and the stepped substrate transfer are used. By using the fork, it is possible to easily transfer the substrate only by the vertical movement. Further, by forming the step, it is possible to prevent the substrate from falling and being displaced during transportation and delivery, and to reduce the contact area with the substrate.

According to a twelfth aspect of the present invention, there is provided an integrated circuit thin film forming apparatus according to the eleventh aspect of the present invention, in which the substrate carrying fork of the substrate carrying mechanism has a contact portion with the substrate. By covering with a synthetic resin such as Teflon or polypropylene, generation of dust on the substrate can be suppressed, and the yield at the time of forming an integrated circuit can be improved.

According to a thirteenth aspect of the present invention, there is provided a thin film forming apparatus for an integrated circuit according to the eleventh aspect, wherein the substrate carrying fork of the substrate carrying mechanism has a hollow structure. It is possible to reduce the weight of the substrate transfer fork and reduce the positional accuracy when the substrate is transferred.

According to the integrated circuit manufacturing method of the fourteenth aspect of the present invention, the wiring underlayer in the underlayer of the integrated circuit is at least one metal selected from the group consisting of titanium, silicon, aluminum and germanium. Since it is a copper alloy formed of copper and copper, it reacts with copper in the wiring layer to form an alloy when the wiring layer is formed, thereby lowering the melting point of the wiring layer.

According to the integrated circuit manufacturing method of the fifteenth or sixteenth aspect of the present invention, the barrier layer in the base layer of the integrated circuit has good electrical contact and barrier properties even when it is thinned.

According to the method of manufacturing an integrated circuit according to claim 17 of the present invention, while irradiating the gas ion source with the inert gas ions at the time of forming the wiring layer and irradiating the substrate with the ion beam source. By depositing copper or copper alloy, it suppresses the crystal grain growth of the copper or copper alloy wiring film, and the wiring material copper or copper alloy easily reflows, making it easy to fill even minute contact holes. A wiring film can be formed. Further, by continuously raising the substrate temperature from room temperature to the reflow start temperature during the formation of the wiring layer, copper and copper alloy, which are also wiring materials, easily reflow, and even for fine contact holes. A wiring film can be formed with good filling properties.

According to the method of manufacturing an integrated circuit according to claim 18 of the present invention, while the copper or copper alloy wiring layer is formed, the ion beam source irradiates the substrate with the inert gas ions while the ion source irradiates the ions on the substrate. By depositing copper or a copper alloy while irradiating with, the crystal grain growth of the copper or copper alloy wiring film is suppressed, and the wiring material copper or copper alloy easily reflows. However, the wiring film can be formed with good filling properties.
In addition, by repeating the cycle of depositing a wiring layer with a predetermined film thickness at the substrate temperature, then raising the temperature to the reflow start temperature, cooling to room temperature again, and depositing a predetermined film thickness The material copper or copper alloy easily reflows, and a wiring film can be formed with good filling properties even for fine contact holes.

[0041]

【Example】

Example 1. An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing the structure of an integrated circuit according to an embodiment of the present invention. 1 is a silicon substrate, 2 is a copper wiring layer, 4 is an insulating layer, 5 is a contact hole, 3 is a base layer formed between the silicon substrate 1 and the copper wiring layer 2,
The underlayer 3 is an adhesion layer 31 made of a titanium layer which is sequentially arranged from the silicon substrate 1 side toward the copper wiring layer 2 side.
(A), a barrier layer 32 (a) made of a TiN layer, and a wiring base layer 33 (a) made of a silicon layer.

In the above embodiment, the barrier layer 32
Although the TiN layer is applied as (a), the present invention is not limited to this, and TiWN, TiW,
The same effect can be obtained by applying TiCN, TiON or the like. Further, although the silicon layer is applied as the wiring base layer 33 (a), it is not limited to this, and titanium, aluminum, germanium or the like may be applied instead of silicon to obtain the same effect.

FIGS. 7 and 8 are schematic views showing an example of a thin film forming apparatus preferably used for manufacturing the integrated circuit of the present invention. In particular, FIG. 8 uses the magnetic field application type ionization means 159 as the ionization means. In the figure, 80 is a vacuum chamber which is maintained at a predetermined vacuum degree, 1
Is a substrate rotatably held above the vacuum chamber 80 by a substrate rotation holding device 81, 82 is a substrate temperature control mechanism for controlling the temperature rise / fall of the substrate 1, and 83 is the substrate 1
Of the nitrogen gas whose flow rate is adjusted near the surface of the gas introduction pipe, 84 is a flow rate adjusting valve for adjusting the flow rate of the nitrogen gas flowing in the gas introduction pipe 83, and 85 is the gas introduction pipe 8
3 and a flow rate adjusting valve 84, a nitrogen gas introducing means 100, a substrate transfer mechanism 100 for loading and unloading the substrate 1 into and from the vacuum chamber 80, and 86 a vacuum exhaust system for adjusting the degree of vacuum in the vacuum chamber 80. Is.

87 (a), 87 (b) and 87 (c) are shutters for opening and closing the flow of vapor of each vapor deposition material, and 50.
(A), 50 (b), 50 (c) are each crucible 51
Titanium 52 (a), silicon 52 (b), and copper 52 (c) are respectively held as vapor deposition substances in (a), 51 (b), and 51 (c), and each vapor deposition substance 52 (a), 52 (b) is held. ), 5
2 (c) of the ionized vapor is applied to each shutter 87.
First, second and third ion beam sources for irradiating the substrate 1 via (a), 87 (b) and 87 (c). In the case of FIG. 8, the first, second and third ion beam sources are provided. Third magnetic field application type ion beam source 150 (a), 150 (b), 150
It is (c).

Further, 53 is a heating filament arranged around the crucible 51 (a), 54 is a heat shield plate arranged so as to cover the circumference of the heating filament 53, and these crucible 51 (a) ), Heating filament 5
3. The heat shield plate 54 constitutes the steam generating means 55. Reference numeral 56 is an electron beam emitting filament for emitting an electron beam, 57 is an electron beam extracting electrode for extracting and accelerating electrons from the electron beam emitting filament 56,
Reference numeral 58 denotes a heat shield plate arranged so as to cover the periphery of the electron beam emission filament 56, and the electron beam emission filament 56, the electron beam extraction electrode 57, and the heat shield plate 58 constitute an ionization means 59.

In the case of FIG. 8, the electron beam emitting filament 56 for emitting an electron beam, the electron beam extracting electrode 57 for extracting and accelerating the electrons from the electron beam emitting filament 56, and the periphery of the electron beam emitting filament 56 are covered. In addition to the arranged heat shield plate 58,
A magnetic field applying means 60 characterized in that a magnet for giving a magnetic field is arranged around the ionization section and on the central axis of the ionization section.
And 61 constitute a magnetic field application type ionization means 159. Reference numeral 62 denotes an accelerating electrode for accelerating the vapor of the vapor deposition material ionized by the ionization means 59 or the magnetic field application type ionization means 159 with an electric field to give kinetic energy.

Reference numeral 70 is a first AC power source for the heating filament 53, 71 is a first DC power source for positively biasing the potential of the crucible 51 (a) with respect to the heating filament 53, 7
2 is a second AC power source for the electron beam emitting filament 56, 73 is a second DC power source for biasing the potential of the electron beam emitting filament 56 negatively with respect to the electron beam extraction electrode 57, 74 Crucible 51 (a) And a third DC power supply that positively biases the potential of the electron beam extraction electrode 57 with respect to the acceleration electrode 62.
4, the power supply device 75 is configured. Then, the steam generation means 55, the ionization means 59 or the magnetic field application type ionization means 159 driven by the power supply device 75.
And the accelerating electrode 62, the first ion beam source 50 (a) or the first magnetic field application type ion beam source 1 described above.
50 (a) is configured. The second ion beam source 50 (b) and the third ion beam source 50
(C) Or second magnetic field application type ion beam source 150
(B), third magnetic field application type ion beam source 150 (c)
The configuration is the same as that of the first ion beam source 50 (a) or the first magnetic field application type ion beam source 150 (a), and a description thereof will be omitted.

Next, the operation of the thin film forming apparatus configured as described above will be described. As an example, a case of forming the integrated circuit shown in FIG. 1 will be described. First, the inside of the vacuum chamber 80 is 1 × 10 ⁻⁶ To by the vacuum exhaust system 86.
After exhausting to a vacuum degree of about rr, the substrate 1 is placed on the substrate rotation holding device 81 by the substrate transfer mechanism 100. Next, the substrate temperature control mechanism 82 sets the substrate temperature to a predetermined temperature, and the substrate rotation holding device 81 rotates the substrate temperature. Next, each shutter 87 (a), 87 (b), 8
With 7 (c) closed, titanium 52
Crucibles 51 (a), 51 (b), 51 filled with (a), silicon 52 (b), and copper 52 (c), respectively.
To (c), that is, for example, the first ion beam source 50
(A) or the first magnetic field application type ion beam source 150
In the case of (a), the electrons emitted from the heating filament 53 are accelerated toward the crucible 51 (a) by the electric field applied from the first DC power supply 71 and collided, whereby the crucible 51 (a) is collided. ) Is heated.

By this heating, the titanium 52 (a) in the crucible 51 (a) is vaporized and injected into the vacuum chamber 80. The vapor of titanium 52 (a) thus injected is ionized by the electron beam emitted from the electron beam emitting filament 56. At this time, in the case of FIG. 8, the magnetic field application type ionization means 159 has a flux density of several hundred gausses for the electron beam emitting filament 56 so that the electrons can be rotated by the magnetic field application means 60, 61 for increasing the plasma density of the glow discharge. Since it can be efficiently applied to the ionization space between 51 (a), it is ionized with a very high ionization efficiency.

From the above, the vaporized vaporized vapor deposition material is vaporized together with the vaporized vaporized vapor deposition material which is not ionized.
It is accelerated by the electric field formed by the acceleration electrode 62. When the shutter 87 (a) is switched to the open state in this state, the vaporized vaporized deposition material and the vaporized vaporized residual vaporization material are applied to the surface of the substrate 1 and collide with each other so that the surface of the substrate 1 is collided. Is titanium 52
The thin film of (a), that is, the titanium layer 31 (a) as an adhesion layer is formed as shown in FIG.

Then, the flow rate adjusting valve 84 is opened, and nitrogen gas is introduced into the vacuum chamber 80 through the gas introducing pipe 83 near the surface of the substrate 1. The vapor of the ionized vapor deposition material and the vapor deposition material which are irradiated with this nitrogen gas are introduced. To react on the substrate 1 to form a titanium nitride layer 32 (a) as a barrier layer on the titanium layer 31 (a) as shown in FIG.

Then, the shutter 87 (a) is closed and the flow rate adjusting valve 84 is closed to stop the supply of the nitrogen gas into the vacuum chamber 80, and then the shutter 87 (b) is opened. By the same action as in the case of the ion beam source 50 (a) or the first magnetic field application type ion beam source 150 (a), this time the second ion beam source 50
(B) or magnetic field application type ion beam source 150 (b)
As shown in FIG. 1, the ionized vapor and vapor of silicon 52 (b) from the substrate are irradiated to the surface of the substrate 1 and collide with each other. As a result, as shown in FIG. a) is formed and these titanium layers 3
1 (a), titanium nitride layer 32 (a) and silicon layer 3
The underlayer 3 is composed of 3 (a).

Thereafter, when the shutter 87b is closed and the shutter 87 (c) is opened, the copper 52 (c) from the third ion beam source 50 (c) or the magnetic field application type ion beam source 150 (c). The ionized vapor and the vapor of the above are radiated and collide with the surface of the substrate 1, so that the copper wiring layer 2 becomes the silicon layer 33 as shown in FIG.
(A) is formed on the integrated circuit to form an integrated circuit.

Here, when the copper wiring layer 2 is formed, the ion beam source 50 (c) or the magnetic field application type ion beam source 15 is used.
By depositing copper while performing ion irradiation of 1 to 500 (μA / cm ² ) with 0 (c), crystal grain growth of the copper wiring film is suppressed and the reflow temperature of copper, which is a wiring material, is lowered. Therefore, the reflow is facilitated, and the wiring film can be formed with good filling property even for a fine contact hole. In addition, the substrate 1 when the copper wiring layer 2 is formed
15, the substrate temperature control mechanism 82 deposits a constant film thickness at a substrate temperature of room temperature T1 to suppress the growth of crystal grains and form a continuous film on the side surface and the bottom surface of the contact hole. Then, by continuously increasing the temperature from the substrate temperature T1 to the reflow starting temperature T2, the outermost silicon layer 33 (a) of the underlayer 3 reacts with the copper of the copper wiring layer 2, By alloying, the melting point of the copper wiring layer 2 can be lowered,
Reflow is facilitated, and a wiring film can be formed with a good filling property even in a fine contact hole.

Similarly, at the time of forming the copper wiring layer 2, 1 to 500 (μA / cm ² ) of ion irradiation is performed by the ion beam source 50 (c) or the magnetic field application type ion beam source 150 (c), After depositing copper, the substrate temperature at the time of forming the copper wiring layer 2 is controlled by the substrate temperature control mechanism 82, as shown in FIG. The cycle of raising the temperature to the starting temperature T2, cooling the substrate temperature to the room temperature T1 again, and depositing a predetermined film thickness may be repeated. That is, by depositing a constant film thickness that is room temperature T1, continuous film formation can be performed on the side surface and the bottom surface of the contact hole while suppressing the growth of crystal grains. By continuously raising the temperature to T2, the outermost silicon layer 33 (a) of the underlayer 3 reacts with the copper of the copper wiring layer 2 and alloys to lower the melting point of the copper wiring layer 2. , Reflow becomes easier, and copper is embedded in the fine contact hole. By cooling the substrate temperature to room temperature T1 again and depositing a predetermined film thickness, it is possible to form a continuous film on the side surface and the bottom surface of the contact hole while suppressing the growth of crystal grains as described above. In the next step, by continuously raising the temperature from the room temperature T1 to the reflow starting temperature T2 again, as described above, the melting point of the copper wiring layer 2 is lowered by alloying, which facilitates reflow. , Copper is embedded in the fine contact holes. By repeating the above cycle, the copper wiring layer 2 deposited on the surface of the substrate is efficiently embedded in the contact hole, so that overhang can be suppressed even in a contact hole having a large aspect ratio and generation of voids can be suppressed. Therefore, the flatness on the substrate surface is improved, and the high-quality copper wiring layer 2 can be formed with a high yield.

According to the integrated circuit of the first embodiment of the present invention configured as described above, the contact resistance from the silicon substrate 1 side to silicon is small and the adhesion is high in the length direction of the contact hole 5. High titanium layer 31
(A) is provided, and a titanium nitride layer 32 (a) having a good barrier property between silicon and a copper wiring material is provided thereon.
Furthermore, a silicon layer 33 (a) which has good adhesion and wettability with a copper wiring material and is easily alloyed with copper is provided thereon, and the underlayer 3 is provided with each of these layers 31 (a), 32.
Since the three-layer structure of (a) and 33 (a) is adopted, the copper wiring layer 2
By controlling the substrate temperature during formation, the outermost silicon layer 33 (a) of the underlayer 3 reacts with the copper of the copper wiring layer 2 and is alloyed to lower the melting point of the copper wiring layer 2. Therefore, it is easy to reflow, the burying property is improved even in a fine contact hole, and an integrated circuit having a good electrical contact property and a good barrier property can be obtained.

As described above, a copper wiring layer having a low resistance and a low resistance contact can be formed, a high quality integrated circuit using the copper wiring layer 2 can be efficiently formed on the surface of the substrate, and the electromigration resistance is excellent. It is possible to manufacture a fine wiring film of a super LSI with high reliability.

In the above embodiment, the barrier layer 32
Although the TiN layer is applied as (a), the present invention is not limited to this, and TiWN, TiW,
The same effect can be obtained by applying TiCN, TiON or the like. Further, although the silicon layer is applied as the wiring base layer 33 (a), it is not limited to this, and titanium, aluminum, germanium or the like may be applied instead of silicon to obtain the same effect.

Example 2. 9 and 10 are schematic views showing another embodiment of the thin film forming apparatus preferably used when manufacturing the integrated circuit of the present invention. In particular,
In the case of 0, a magnetic field applying means for applying a magnetic field is provided in the ionization section. Here, the same parts as those in FIGS. 7 and 8 are designated by the same reference numerals, and the description thereof will be omitted. In the figure, 83 is a gas introducing pipe for introducing nitrogen gas into the vicinity of the substrate 1, 90 is a flow rate adjusting valve for adjusting the flow rate of an inert gas such as argon gas, 91 is a gas introducing pipe, and 92 is an electron beam emitting means. Filament 93 is an electron beam extraction electrode for forming plasma inside, 94 is an accelerating means for accelerating and irradiating ions to substrate 1 through porous electrode 95, 110 is gas introducing tube 91, electron beam emitting means 92, The gas ion source is composed of an electron beam extraction electrode 93, a porous electrode 95 and an acceleration means 94.

In the case of FIG. 10, in addition to the gas introduction tube 91, the electron beam emission means 92, the electron beam extraction electrode 93, the porous electrode 95, the acceleration means 94, a magnetic field application means 96 for applying a magnetic field to the ionization section. A magnetic field application type gas ion source 120 is configured.

Reference numeral 97 is a filament heating power source for heating the filament 92 serving as an electron beam emitting means, 98 is a DC power source for biasing the electron beam extraction electrode 93 to a positive potential with respect to the filament 92 serving as an electron beam emitting means, 99 Is a DC power source for biasing the electron beam extraction electrode 93 to a positive potential with respect to the acceleration means 94.

Next, the operation of the thin film forming apparatus configured as described above will be described. As an example, a case of forming a copper wiring layer of the integrated circuit shown in FIG. 1 will be described. Up to the silicon layer which is the wiring base layer, formation is performed in the same manner as in the first embodiment. Then, by the vacuum exhaust device 86,
A flow rate adjusting valve 9 is provided in a vacuum chamber 80 maintained at a high vacuum.
By adjusting 0, the argon gas which is an inert gas is introduced from the gas introduction pipe 91 into the electron beam extraction electrode 93 of the gas ion source 110 or the magnetic field application type gas ion source 120, and the gas pressure in the vacuum chamber 80 is adjusted. 10 ^-5 to 10
^-3 Adjust to about Torr. An electron beam extraction electrode 93 is supplied from a heated filament 92, which is an electron beam emitting means, by a filament heating power source 97.
Direct current power source 98 so that the electron beam is emitted toward
When a bias voltage is applied by, the emitted thermoelectrons collide with the argon gas in the electron beam extraction electrode 93 to form plasma, and ionization is performed.

At this time, in the case of FIG. 10, the magnetic field applying means 96
By arranging a magnet that gives a magnetic field around the ionization part and on the central axis of the ionization part, a magnetic flux density of about several hundred gauss is efficiently transferred to the ionization space inside the electron beam extraction electrode 93 so that the electron beam can rotate. Since it can be applied well, the ionization efficiency can be increased. As described above, the generated argon ions are accelerated by the electric field formed by the accelerating means 94, extracted by the porous electrode 95, and irradiated on the substrate 1.

Next, in a state where argon ions are irradiated from the gas ion source 110 or the magnetic field application type gas ion source 120, the third ion beam source 50 (c) or the magnetic field is generated in the same manner as in the first embodiment. As the ionized vapor of the copper 52 (c) and vapor are radiated and collide with the substrate 1 from the application type ion beam source 150 (c), the copper wiring layer 2 causes the wiring underlying layer 33 ( a) is formed on the integrated circuit.

Here, when the copper wiring layer 2 is formed, the ion beam source 50 (c) or the magnetic field application type ion beam source 15 is used.
0 (c) and the gas ion source 110 or the magnetic field application-type gas ion source 120, 1 to 500 (μA / c
By depositing copper while performing ion irradiation of m ² ), the crystal grain growth of the copper wiring film can be suppressed and the reflow temperature of copper, which is the wiring material, can be lowered, which facilitates reflow, thus providing a fine contact hole. However, the wiring film can be formed with good filling properties, and the flatness of the substrate surface is improved by the sputtering effect of argon ions.

As in the first embodiment, the substrate temperature at the time of forming the copper wiring layer 2 is controlled by the substrate temperature control mechanism 82 as shown in FIG. 33 (a) reacts with copper in the copper wiring layer 2 and alloys to lower the melting point of the copper wiring layer 2,
Reflow is facilitated, and the copper wiring layer 2 can be formed with good burying property even in a fine contact hole. Further, by repeating the cycle of the substrate temperature as shown in FIG. 16, the copper wiring layer 2 deposited on the surface of the substrate is efficiently embedded in the contact holes, so that an overhang is caused even for a contact hole having a large aspect ratio. It is possible to suppress the occurrence of voids, improve the flatness on the substrate surface, and form a high-quality wiring film with a high yield. As described above, the copper wiring layer 2 having low resistance and low resistance contact can be formed, a high-quality integrated circuit using the copper wiring layer 2 can be efficiently formed on the surface of the substrate, and the electromigration resistance is excellent. The fine wiring film of LSI can be manufactured with high reliability.

Example 3. FIG. 2 is a sectional view showing the configuration of another embodiment of the integrated circuit. 1 is a silicon substrate, 2 is a copper wiring layer, 4 is an insulating layer, 5 is a contact hole, 3 is a base layer formed between the silicon substrate 1 and the copper wiring layer 2,
The underlayer 3 is an adhesion layer 31 made of a titanium layer which is sequentially arranged from the silicon substrate 1 side toward the copper wiring layer 2 side.
(D), a barrier layer 32 (d) made of a TiN layer, and a wiring foundation layer 33 (d). Here, the wiring underlayer 33 (d) is formed of an alloy of copper with a metal such as titanium, silicon, or germanium. In addition,
Although the TiN layer is applied as the barrier layer 32 (d) in the above embodiment, the barrier layer 32 (d) is not limited to the TiN layer.
Similar effects can be obtained by applying TiWN, TiW, TiCN, TiON or the like instead of N.

Next, a case will be described in which the thin film formation of the integrated circuit in the present embodiment having the above-mentioned structure is carried out by using the thin film forming apparatus for the integrated circuit shown in FIGS. First, in the same manner as in Example 1, after forming the adhesion layer 31 (d) made of a titanium layer and the barrier layer 32 (d) made of a titanium nitride layer, the flow rate adjusting valve 84 is closed and the inside of the vacuum chamber 80 is closed. The supply of nitrogen gas to the shutter is stopped, the shutter 87 (a) is closed, and the remaining shutters 8
When 7 (b) and (c) are opened, the second ion beam source 50 (b) or the magnetic field application type ion beam source 1
Ionized vapor of silicon 52 (b) and vapor from 50 (b) and also a third ion beam source 50
(C) Or magnetic field application type ion beam source 150 (c)
As shown in FIG. 2, the ionized vapor and vapor of copper 52 (c) are irradiated onto the substrate 1 and collide with each other, whereby an alloy layer 33 (d) of copper and silicon is formed.
Are formed on the barrier layer 32 (d) made of a titanium nitride layer to form the underlayer 3.

After that, the second shutter 87 (b) is closed and only the third shutter 87 (c) is opened, and the copper wiring layer is formed in the same manner as in the first embodiment, whereby the alloy is formed. The copper wiring layer 2 is formed on the layer 33 (d) to form an integrated circuit.

In the integrated circuit of this embodiment constructed as described above, when the copper wiring layer 2 is formed, the same substrate temperature control as in the case of Embodiment 1 is performed, so that the alloy layer 33d is formed.
The melting point of the copper wiring is lowered by the reaction between the copper wiring layer 2 and
In order to facilitate reflow, the filling property in the contact hole 5 is improved, and the remaining layers 31 (d), 3
2 (d) also improves electrical contact properties and barrier properties.

Example 4. FIG. 3 is a sectional view showing the structure of a further embodiment of the integrated circuit. Reference numeral 1 is a silicon substrate, 2 is a copper wiring layer, 4 is an insulating layer, 5 is a contact hole, 3 is a base layer formed between the silicon substrate 1 and the copper wiring layer 2, and this base layer 3 is made of silicon. It is composed of an adhesion layer 31 (e) made of a titanium layer, a barrier layer 32 (e) made of a TiN layer, and a wiring foundation layer 33 (e) which are sequentially arranged from the substrate 1 side to the copper wiring layer 2 side. There is. Here, the wiring underlayer 33 (e) is formed of an alloy of copper with a metal such as titanium, silicon or germanium, and the composition of the metal such as titanium, silicon or germanium becomes closer to the copper wiring layer 2. Are formed so as to decrease with respect to the composition of copper. In addition, in the above embodiment, the TiN layer is applied as the barrier layer 32 (e),
Of course, it is not limited to this.
The same effect can be obtained by applying iWN, TiW, TiCN, TiON or the like.

Next, a case will be described in which the thin film formation of the integrated circuit in the present embodiment having the above-mentioned structure is carried out by using the thin film forming apparatus for the integrated circuit shown in FIGS. First, in the same manner as in Example 3, the titanium layer 31
After forming the adhesion layer made of (e) and the barrier layer 32 (e) made of a titanium nitride layer, the first shutter 87 is formed.
When (a) is closed and the flow rate adjusting valve 84 is closed to stop the supply of nitrogen gas into the vacuum chamber 80 and the remaining shutters 87 (b) and (c) are opened, the second ion The ionized vapor and vapor of silicon 52 (b) from the beam source 50 (b) or the magnetic field application type ion beam source 150 (b), and the third ion beam source 50 (c) or the magnetic field application type ion. Beam source 150
From (c), the ionized vapor and vapor of copper 52 (c) are irradiated and collide with the substrate (1), respectively, so that an alloy layer 33 of copper and silicon is formed as shown in FIG.
(E) is formed on the barrier layer 32 (e). On this occasion,
As shown in FIGS. 17 (a) to 17 (j), as the vapor deposition progresses, the amount of silicon vapor deposited is gradually reduced or the amount of copper vapor deposited is gradually increased.
An alloy layer can be formed in which the composition of silicon gradually decreases with respect to the composition of copper.

After that, the second shutter 87 (b) is closed and only the third shutter 87 (c) is opened, and the copper wiring layer is formed in the same manner as in the first embodiment. The copper wiring layer 2 is formed on the layer 33 (e) to form an integrated circuit.

In the integrated circuit of the present embodiment having the above-described structure, when the copper wiring layer 2 is formed, the same substrate temperature control as in the case of the first embodiment is performed so that the copper of the copper wiring layer 2 is removed. By alloying with the alloy on the surface of the alloy layer 33 (e), the melting point of copper in the copper wiring layer 2 is lowered, and the alloy is fluidized in the contact hole 5, so that the copper wiring layer 2 can be quickly and quickly moved into the contact hole 5. Can be easily embedded. Further, the electric contact property and the barrier property are also improved by the remaining layers 31 (e) and 32 (e).

Example 5. FIG. 4 is a sectional view showing the structure of a further embodiment of the integrated circuit. Reference numeral 1 is a silicon substrate, 2 is a copper wiring layer, 4 is an insulating layer, 5 is a contact hole, 3 is a base layer formed between the silicon substrate 1 and the copper wiring layer 2, and this base layer 3 is made of silicon. It is composed of an adhesion layer 31 (f), a barrier layer 32 (f), and a wiring foundation layer 33 (f) which are sequentially arranged from the substrate 1 side toward the copper wiring layer 2 side. Here, the barrier layer 32 (f) has a compositionally graded function and is formed of a titanium nitride (TiNx) thin film layer in which the composition X changes from the substrate 1 toward the copper wiring layer 2.

FIG. 5 is a sectional view showing the structure of another embodiment of the integrated circuit. Reference numeral 1 is a silicon substrate, 2 is a copper wiring layer, 4 is an insulating layer, 5 is a contact hole, and 3 is a base layer formed between the silicon substrate 1 and the copper wiring layer.
Is composed of an adhesion layer 31 (g), a barrier layer 32 (g), and a wiring foundation layer 33 (g) which are sequentially arranged from the silicon substrate 1 side toward the copper wiring layer 2 side. Here, the barrier layer 32 (g) has a compositionally graded function, and the titanium layer 10 (g), the dititanium nitride layer 11 (g), and the nitriding layer are formed from the substrate 1 toward the copper wiring layer 2. Titanium layer 12
(G).

FIG. 6 is a sectional view showing the configuration of an embodiment of an integrated circuit showing still another embodiment. 1 is a silicon substrate,
2 is a copper wiring layer, 4 is an insulating layer, 5 is a contact hole, 3
Is an underlayer formed between the silicon substrate 1 and the copper wiring layer 2, and the underlayer 3 is an adhesion layer 31 (h) sequentially arranged from the silicon substrate 1 side toward the copper wiring layer 2 side. ),
The barrier layer 32 (h) and the wiring underlying layer 33 (h) are included. Here, the barrier layer 32 (h) has a compositionally graded function, and the titanium layer 10 (h) gradually increases from the substrate 1 toward the copper wiring layer 2, and the nitrogen composition gradually increases with respect to the titanium composition. The titanium nitride layer 11 (h) is formed, and finally the titanium nitride layer 12 (h) is formed.

Next, a case will be described in which the thin film formation of the integrated circuit in the present embodiment having the above-described structure is performed using the thin film forming apparatus for the integrated circuit shown in FIGS.
Adhesion layers 31 (f), 31 (g), 31 (h) of the underlayer 3
Up to this, the formation is performed in the same manner as in the case of the first embodiment. Next, ionized titanium vapor and titanium vapor irradiated from the first ion beam source 50 (a) or the magnetic field application type ion beam source 150 (a) and nitrogen gas which is a reactive gas introduced in the vicinity of the substrate. And the reaction proceeds on the substrate to form a titanium nitride thin film.

Here, FIG. 18 shows the results of an X-ray diffraction analysis of the crystallinity of the titanium nitride layer formed when the amount of nitrogen gas introduced was changed. From this figure, when the nitrogen gas partial pressure is 4.0 × 10 ⁻⁶ Torr or less, titanium (T
i) at 1.0 × 10 ⁻⁵ Torr, dititanium nitride (Ti
₂ N), at 1.7 × 10 ⁻⁵ Torr, dititanium nitride (T
mixed crystal of i ₂ N) and titanium nitride (TiN), 3.0 × 1
Above 0 ^-5 Torr, titanium nitride (TiN) is formed, and the crystallinity and the composition of nitrogen and titanium in the film can be freely controlled by the partial pressure of nitrogen gas. Further, FIG. 19 shows the titanium nitride composition dependency of the specific resistance of titanium nitride. From the composition perspective, it can be seen that the specific resistance decreases as the ratio of titanium to nitrogen increases.

Further, a case where the thin film formation of the integrated circuit in this embodiment is carried out by using the thin film forming apparatus for the integrated circuit shown in FIGS. 9 and 10 will be described below. Adhesion layer 31 of underlying layer 3
Up to (f), 31 (g), and 31 (h), formation is performed in the same manner as in the first and second embodiments.

Next, the vacuum gas exhaust system 86 introduces nitrogen gas into the vicinity of the substrate 1 through the gas introduction pipe 83 into the vacuum chamber 80 maintained at a high vacuum, and the flow rate adjusting valve 90 is adjusted to adjust the flow rate. Argon gas, which is an inert gas, is introduced into the electron beam extraction electrode 93 of the gas ion source through the gas introduction pipe 90, and the gas pressure in the vacuum chamber 80 is adjusted to 10 ⁻⁵ to 10 by combining the argon partial pressure and the nitrogen partial pressure. ^-3 Tor
Adjust to be around r. Here, although nitrogen gas was used as the gas introduced in the vicinity of the substrate 1, the same effect can be obtained by using a mixed gas of nitrogen gas or a mixed gas containing nitrogen element.

Then, a bias voltage is applied by the DC power source 98 so that the filament heating power source 97 emits an electron beam from the heated filament 92 which is the electron beam emitting means toward the electron beam extraction electrode 93. The emitted thermoelectrons collide with the argon gas in the electron beam extraction electrode 93 to form plasma, which is ionized. At this time, in the case of the thin film forming apparatus of FIG. 10, since the magnetic field applying means 96 applies a magnetic flux density of about several hundred gauss so that the electron beam can rotate, the ionization efficiency can be improved. As described above, the generated argon ions are accelerated by the electric field formed by the acceleration electrode 94, extracted by the porous electrode 95, and irradiated on the substrate 1.

Then, in the same manner as in Embodiments 1 and 2, the first ion beam source 50 (a) or the magnetic field application type ion beam source 150 (a) is used to form titanium 52.
The substrate 1 is irradiated with the ionized vapor and vapor of (a) and collides with them. On the other hand, the nitrogen gas supplied from the gas introduction pipe 83 is present in the substrate 1 and the vicinity of the substrate 1, and is in an active state where it is excited, dissociated or ionized by the irradiation of argon ions. By colliding with the ionized vapor and vapor of (a), the reaction proceeds efficiently and a titanium nitride thin film is formed on the substrate 1. At this time, if the partial pressure of nitrogen gas or the amount of argon ions with which the substrate 1 is irradiated is changed, the composition ratio of titanium and nitrogen in the film changes, so that the composition ratio can be freely controlled.

Example 6. FIG. 11 is a sectional view showing the configuration of an embodiment of the substrate rotation holding device 81 of the thin film forming apparatus for integrated circuits. In the figure, 1 is a substrate, 301 is a substrate holder for rotating and holding the substrate 1, 302 is a substrate rotating mechanism capable of reversing the rotation direction for each rotation, 303 is a substrate heating mechanism by lamp heating, high temperature gas, etc., 304 Is water,
A substrate cooling mechanism using liquid nitrogen or the like, 305 is a vertical movement mechanism that can independently move the substrate heating mechanism 303 and the substrate cooling mechanism 304 up and down, and 82 is from the substrate heating mechanism 303, the substrate cooling mechanism 304, and the vertical movement mechanism 305. It is a substrate temperature control mechanism configured.

Next, the operation of the thin film forming apparatus will be described. As an example, FIG. 16 showing the temperature control performed in forming the copper wiring layer in Examples 1 and 2 will be described. First, the substrate is rotated by the substrate rotating mechanism 302 having a mechanism that reverses the rotation direction for each rotation.
By rotating the substrate of the substrate rotating mechanism 302, even if the substrate heating mechanism 303 and the substrate cooling mechanism 304 are provided as the substrate temperature control mechanism 82, the twist of the piping, wiring, etc. can be alleviated for each rotation, and the apparatus structure Does not become complicated, and the same substrate rotation effect as when rotating continuously in one direction is easily obtained.

Next, regarding the control method by the present substrate temperature control mechanism 82, the vertical movement mechanism 305 capable of independently moving the substrate heating mechanism 303 and the substrate cooling mechanism 304 up and down can handle the required temperature. Then, by bringing the substrate heating mechanism 303 or the substrate cooling mechanism 304 close to or in contact with the substrate 1, the substrate heating effect or the cooling effect is increased, so that the required substrate temperature can be accurately set in a short time. can do.

For example, in the case of FIG. 16, the vertical movement mechanism 3
By 05, the substrate cooling mechanism 304 is brought close to or in contact with the substrate 1 to cool the substrate temperature to the required temperature T1, and then film formation is performed. The film is kept at the predetermined temperature T1 during the formation of the predetermined film thickness x1. Then, the vertical movement mechanism 305
The substrate cooling mechanism 304 is moved away from the substrate 1, and the substrate heating mechanism 303 is moved closer to or in contact with the substrate 1 to raise the substrate temperature to the reflow start temperature T2 and hold for a predetermined time, and then the vertical movement mechanism 305. Thereby moving the substrate heating mechanism 303 away from the substrate 1 and bringing the substrate cooling mechanism 304 close to or in contact with the substrate 1 to cool the substrate temperature to the required temperature T1 again to form a predetermined film thickness x1. The operation of maintaining the temperature at the predetermined temperature T1 is repeated.

By the above operation, it becomes possible to accurately control the temperature rise and fall of the substrate temperature in a short time during the film formation.
Therefore, according to the substrate rotation holding device 81, even when the substrate heating mechanism 303 and the substrate cooling mechanism 304 are provided as the substrate temperature control mechanism 82, the device structure does not become complicated, and the substrate can be easily rotated continuously in one direction. The same effect of rotating the substrate can be obtained, and the temperature of the substrate can be raised and lowered during film formation in a shorter time with good controllability, and the temperature control during film formation can be performed with high accuracy. Can be reduced and productivity can be improved.

Example 7. FIG. 12 is a configuration diagram showing an embodiment of a substrate transfer mechanism of a thin film forming apparatus for an integrated circuit. In the figure, 310 is a stepped horseshoe substrate holder, 311
(A) is a rectangular substrate transfer fork with steps, 312
(A) is a contact portion with the substrate.

FIG. 13 is a constitutional view showing another embodiment of the substrate carrying fork of the substrate carrying mechanism of the integrated circuit thin film forming apparatus. In the figure, 311 (b) is a rectangular substrate transfer fork with a step, and 312 (b) is a contact portion with a substrate coated with Teflon, polypropylene, etc. By coating these, dust on the substrate 1 is prevented. The generation can be suppressed, and the yield at the time of manufacturing an integrated circuit can be improved.

FIG. 14 is a block diagram showing an embodiment of a substrate carrying fork of a substrate carrying mechanism of an integrated circuit thin film forming apparatus. In the figure, 311 (c) is a rectangular substrate transfer fork with a step, 312 (c) is a contact portion with the substrate, 3
Reference numeral 13 denotes a hollow structure portion, which is a substrate transfer fork 311.
By making (c) hollow, the weight of the substrate transfer fork can be reduced, and the positional accuracy during substrate transfer can be improved.

Next, the operation will be described. First, a case where a substrate is mounted on the stepped horseshoe substrate holder 310 will be described. As shown in FIG. 20, the board 1 placed on the stepped rectangular board transfer fork 311 is moved in the horizontal direction, whereby the stepped horseshoe board holder 3 is moved.
It is conveyed directly above 10 (see FIG. 21).

Next, the substrate is transferred by vertically lowering the stepped rectangular substrate carrying fork 311 or vertically raising the stepped horseshoe-shaped substrate holder 310 (see FIG. 22). ).

Finally, the mounting of the substrate 1 on the stepped horseshoe substrate holder 310 is completed by moving the stepped rectangular substrate transfer fork 311 in the horizontal direction.
(See FIG. 23). Also, a horseshoe-shaped substrate holder 31 with steps
When unloading the substrate 1 from 0, the above procedure may be reversed.

By the above operation, the substrate 1 is loaded and unloaded, but since the substrate holder 310 and the substrate transporting fork 311 are horseshoe-shaped and rectangular, respectively, the substrate can be easily moved only by the vertical movement. Can be delivered. In addition, by forming the step, it is possible to prevent the substrate 1 from falling and being displaced during the transportation and the delivery, and the contact portion 312 with the substrate 1 can be suppressed.
(A) The area can be reduced.

[0096]

As described above, according to the integrated circuit of claim 1 of the present invention, since copper or copper alloy is used as the wiring layer, the wiring having low resistance and excellent electromigration (EM) resistance is provided. Layer can be formed, and the adhesion layer and the barrier layer in the underlayer of the integrated circuit have good electrical contact and barrier properties even if they are thinned. Furthermore, the wiring underlayer in the underlayer is the same as the copper or copper alloy of the wiring layer. Since it is a metal that easily forms an alloy,
By reacting with the copper or copper alloy in the wiring layer to form an alloy, the melting point of the wiring layer made of copper or copper alloy can be lowered, good step coverage can be secured, and the wiring layer can be placed in the contact hole well. Therefore, it is possible to provide an integrated circuit that can be embedded in a substrate, and thus a high-quality integrated circuit using a wiring layer made of copper or a copper alloy can be efficiently formed on a substrate surface, and low resistance and electromigration resistance can be provided. An excellent micro LSI fine wiring film can be manufactured with high reliability.

According to the integrated circuit of the second or third aspect, the wiring underlayer in the underlayer of the integrated circuit is at least one metal selected from the group consisting of titanium, silicon, aluminum and germanium. Since it is a copper alloy formed from copper and copper, it lowers the melting point of the wiring layer composed of copper or a copper alloy by reacting with the copper or the copper alloy of the wiring layer to form an alloy when the wiring layer is formed. Therefore, it is possible to provide an integrated circuit which can secure good step coverage and can satisfactorily embed a wiring layer in a contact hole. Therefore, a high quality integrated circuit using a copper or copper alloy wiring layer can be provided. It is possible to efficiently form a fine wiring film of VLSI, which can be efficiently formed on the substrate surface and has low resistance and excellent electromigration resistance.

According to the integrated circuit of any one of claims 4 to 6, in the integrated circuit of any one of claims 1 to 3, the barrier layer in the base layer of the integrated circuit is The use of a graded structure in which the composition of titanium and nitrogen is changed has the effect of improving the electrical contact and barrier properties even if the barrier layer is thinned. A high quality integrated circuit can be efficiently formed on the surface of a substrate, and a fine wiring film of VLSI with low resistance and excellent electromigration resistance can be manufactured with high reliability.

Further, according to the thin film forming apparatus for an integrated circuit of the seventh aspect, the substrate temperature control mechanism of the substrate rotation holding device is provided with the substrate heating mechanism and the substrate cooling mechanism, so that the substrate temperature during film formation is reduced. The temperature controllability is high, the vapor of the vapor deposition material is ionized by the ion beam source, and the kinetic energy is applied to the vaporized vapor by the accelerating means. A copper alloy wiring layer can be formed, and the copper or copper alloy wiring layer can be formed with an ion beam source at 1 to 500 (μA
/ Cm ² ) ion irradiation, and by repeating the temperature cycle of raising and lowering the temperature by the substrate temperature control mechanism, reflow of copper or copper alloy, which is a wiring material, is promoted, and even for fine contact holes. Since the wiring layer can be formed with a good filling property and the reactivity is high, the T having good electrical contact and barrier properties can be obtained.
A barrier layer such as iN can be formed. Furthermore, it is possible to form a barrier layer having a graded structure in which the composition ratio of titanium and nitrogen is changed. Further, when forming a copper alloy layer formed of at least one metal selected from the group consisting of titanium, silicon, aluminum and germanium, which is a wiring underlayer in the underlayer of an integrated circuit, and copper, a plurality of ions are formed. By mixing and depositing copper and alloying elements with a beam source and controlling each deposition rate, the composition ratio of copper and alloying elements can be freely changed, and a graded structure can be obtained. It is possible to provide a manufacturing apparatus capable of efficiently forming a high-quality integrated circuit using an alloy wiring layer on the surface of a substrate, and capable of reliably manufacturing a micro wiring film of VLSI having excellent electromigration resistance.

Further, according to the thin film forming apparatus of the integrated circuit of the eighth aspect, the substrate temperature control mechanism is provided with the substrate heating mechanism and the substrate cooling mechanism, so that the temperature controllability of the substrate temperature during film formation is controlled. Since the vapor of the vapor deposition material is ionized by the ion beam source of the thin film forming apparatus of the integrated circuit and the kinetic energy is given to the vaporized vapor by the accelerating means, it has a low resistance and a low resistance contact. A copper or copper alloy wiring layer can be formed, and copper or copper alloy is vapor-deposited while irradiating the substrate with an ion beam source while irradiating inert gas ions with a gas ion source when forming the copper or copper alloy wiring layer. In addition to repeating the temperature cycle of raising and lowering the temperature by the substrate temperature control mechanism, the reflow of copper or copper alloy, which is the wiring material, is promoted. , Can also form a filling good wiring layer with respect to a fine contact hole, also,
Nitrogen gas introduced in the vicinity of the substrate is activated by the irradiation of inert gas ions from the gas ion source to be vapor-deposited on the substrate, so that the reaction efficiency with vapor of the vapor deposition substance is improved, and good electrical contact and barrier are achieved. A barrier layer of TiN or the like having a property can be formed. Furthermore, it is possible to form a barrier layer having a graded structure in which the composition ratio of titanium and nitrogen is changed.
Further, when forming a copper alloy layer formed of copper and at least one metal selected from the group consisting of titanium, silicon, aluminum and germanium, which is a wiring underlayer in an underlayer of an integrated circuit, a plurality of ions are formed. By the beam source, copper and alloy elements are mixed and vapor-deposited, and by controlling each vapor deposition rate, the composition ratio of copper and alloy elements can be freely changed, and there is also an effect that a graded structure can be formed. Therefore, it is possible to efficiently form a high-quality integrated circuit using a copper or copper alloy wiring layer on the surface of a substrate, and to provide a manufacturing apparatus capable of reliably manufacturing a micro wiring film of VLSI with excellent electromigration resistance. To do.

According to the integrated circuit thin film forming apparatus of the ninth aspect, in the thin film forming apparatus of the integrated circuit according to the seventh or the eighth aspect, the magnetic field application type ion beam source of the thin film forming apparatus of the integrated circuit is used. Is equipped with a magnetic field applying means for increasing the plasma density of glow discharge as an ionizing means, and by arranging a magnet for giving a magnetic field around the ionization part and on the central axis of the ionization part, electrons can rotate. Since a magnetic flux density of several hundred Gauss can be efficiently applied to the ionization space between the electron beam emitting filament and the crucible, the vapor of the vapor deposition material can be ionized with extremely high ionization efficiency, and a magnetic field application type gas ion source Is equipped with a magnetic field applying means as a gas ionizing means, and as its arrangement, a magnet for applying a magnetic field is used as an ionizing part. By arranging it on the central axis of the enclosure and the ionization part, it is possible to efficiently apply a magnetic flux density of about several hundred gauss to the ionization space inside the electron beam extraction electrode so that the electron beam can rotate, thus improving the ionization efficiency. Therefore, the following effects can be obtained as in claims 7 and 8. A low resistance and low resistance contact copper or copper alloy wiring layer can be formed, and at the time of forming the copper or copper alloy wiring layer, ion irradiation of 1 to 500 (μA / cm ² ) is performed by a magnetic field application type ion beam source, By repeating the temperature cycle of raising and lowering the temperature by the substrate temperature control mechanism, it is possible to promote the reflow of the wiring material copper or copper alloy, and to form a wiring layer with a good filling property even for a fine contact hole, Furthermore, since the reactivity is high, it is possible to form a barrier layer such as TiN having good electrical contact and barrier properties. Also,
The copper or copper alloy is vapor-deposited while ion-irradiating the substrate with the magnetic field-applying ion beam source while irradiating the inert gas ions with the magnetic field-applying gas ion source when forming the copper or copper alloy wiring layer. By repeating the temperature raising and lowering temperature cycle by the temperature control mechanism, the reflow of the wiring material copper or copper alloy can be promoted, and the wiring layer can be formed well even in the fine contact hole. Since the nitrogen gas introduced in the vicinity of the substrate is activated and vapor-deposited on the substrate by the inert gas ion irradiation from the magnetic field application type gas ion source, the reaction efficiency with the vapor of the vapor deposition material is improved, and good electrical conductivity is obtained. It is possible to form a barrier layer such as TiN having a physical contact and a barrier property. Furthermore, it is possible to form a barrier layer having a graded structure in which the composition ratio of titanium and nitrogen is changed. Further, when forming a copper alloy layer formed of copper and at least one metal selected from the group consisting of titanium, silicon, aluminum and germanium, which is a wiring underlayer in the underlayer of an integrated circuit, a plurality of magnetic fields are used. The effect of being able to freely change the composition ratio of copper and alloy elements by controlling the deposition rate by mixing and depositing copper and alloy elements by an application type ion beam source, and also having an inclined structure There is. From the above, it is possible to efficiently form a high-quality integrated circuit using a copper or copper alloy wiring layer on the surface of a substrate, and a VLSI with excellent electromigration resistance.
To provide a manufacturing apparatus capable of manufacturing the above-mentioned fine wiring film with high reliability.

According to the thin film forming apparatus for an integrated circuit of the tenth aspect, in the thin film forming apparatus for the integrated circuit according to the seventh or eighth aspect, the substrate heating mechanism and the substrate cooling mechanism are independently moved up and down. By providing the movable mechanism, the substrate heating mechanism or the substrate cooling mechanism can be brought close to or in contact with the substrate when the substrate temperature is raised or lowered, and the substrate temperature can be raised or lowered in a shorter time. It can be performed with good controllability. Further, since the substrate rotating mechanism is provided with a mechanism for reversing the rotating direction for each rotation, even if the substrate heating mechanism and the substrate cooling mechanism are provided, the device structure does not become complicated, and the one direction can be easily performed. The same effect of rotating the substrate can be obtained as when rotating continuously.

According to the integrated circuit thin film forming apparatus of the eleventh aspect, in the thin film forming apparatus of the integrated circuit according to the seventh or eighth aspect, the substrate transfer mechanism includes the stepped horseshoe-shaped substrate holder and the step. By using the attached substrate transfer fork, the substrate can be easily delivered only by the vertical movement. Further, by forming the step, it is possible to prevent the substrate from falling and being displaced during transportation and delivery, and since the contact area with the substrate can be reduced, it is possible to suppress the generation of dust on the substrate.

According to a twelfth aspect of the thin film forming apparatus for an integrated circuit of the eleventh aspect, in the thin film forming apparatus for an integrated circuit according to the eleventh aspect, the contact portion of the substrate carrying fork is made of Teflon, polypyrene or the like. By coating the resin, it is possible to suppress the generation of dust on the substrate and to improve the yield at the time of forming an integrated circuit.

According to the thin film forming apparatus for an integrated circuit of the thirteenth aspect, in the thin film forming apparatus for the integrated circuit according to the eleventh aspect, the fork for transferring the substrate has a hollow structure. It is possible to reduce the weight of the device itself, and it is possible to improve the positional accuracy when the substrate is transported.

According to the integrated circuit manufacturing method of the fourteenth aspect, at least one metal selected from the group consisting of titanium, silicon, aluminum and germanium, which is the wiring underlayer in the underlayer of the integrated circuit, is used. When a copper alloy layer formed of copper is formed, copper and alloy elements are mixed and vapor-deposited with a plurality of ion beam sources or a magnetic field application type ion beam source, and each vapor deposition rate is controlled. There is an effect that the composition ratio of can be freely changed and a graded structure can be formed. Further, since the wiring underlayer in the underlayer of the integrated circuit is a copper alloy formed from at least one metal selected from the group consisting of titanium, silicon, aluminum and germanium, copper or a copper alloy wiring. When the layer is formed, it reacts with the copper or copper alloy in the copper or copper alloy wiring layer to form an alloy, which lowers the melting point of the wiring layer and ensures good step coverage. There is an effect that it can be well embedded in the hole. As described above, a high-quality integrated circuit using a copper or copper alloy wiring layer can be efficiently formed on the substrate surface, and a VLSI fine wiring film having low resistance and excellent electromigration resistance can be manufactured with high reliability.

Further, according to the integrated circuit manufacturing method of the fifteenth or sixteenth aspect, the amount of the nitrogen gas introduced into the vacuum chamber is controlled by the inclined structure for changing the composition ratio of titanium and nitrogen. This has the effect that it can be easily formed. Further, since the barrier layer in the base layer of the integrated circuit has a graded structure in which the composition of titanium and nitrogen is changed, there is an effect that electrical contact and barrier properties are improved even if the barrier layer is thinned. From the above,
It is possible to efficiently form a high-quality integrated circuit using a copper or copper alloy wiring layer on the surface of a substrate, and it is possible to reliably manufacture a fine wiring film of VLSI having low resistance and excellent electromigration resistance.

According to the method of manufacturing an integrated circuit according to claim 17, the method of manufacturing a copper or copper alloy wiring layer of the integrated circuit is such that a gas ion source or a magnetic field application type gas ion is formed at the time of forming the copper or copper alloy wiring layer. Crystal particles of the copper or copper alloy wiring film by depositing copper or copper alloy while irradiating ions on the substrate with an ion beam source or a magnetic field application type ion beam source while irradiating inert gas ions with a source In addition to suppressing the growth, the wiring material copper or copper alloy easily reflows, and a wiring film can be formed with a good filling property even for a fine contact hole.
Further, by continuously raising the substrate temperature from room temperature to the reflow start temperature during the wiring layer formation, similarly copper or copper alloy, which is a wiring material, easily reflows, and even for fine contact holes. There is an effect that a wiring film can be formed with good filling properties. As described above, a high-quality integrated circuit using a copper or copper alloy wiring layer can be efficiently formed on the substrate surface, and a VLSI fine wiring film having low resistance and excellent electromigration resistance can be manufactured with high reliability.

According to the integrated circuit manufacturing method of the eighteenth aspect, the ion beam source is irradiated with the inert gas ions by the gas ion source or the magnetic field application type gas ion source when the copper or copper alloy wiring layer is formed. Alternatively, by using a magnetic field application type ion beam source to deposit copper or a copper alloy while irradiating ions onto the substrate, crystal grain growth of the copper or copper alloy wiring film is suppressed and copper or copper which is a wiring material is suppressed. The alloy easily reflows, and the wiring film can be formed with good filling properties even for fine contact holes. In addition, by repeating the cycle of depositing the wiring layer to a predetermined film thickness at the substrate temperature, then increasing the temperature to the reflow start temperature, cooling to room temperature again, and depositing the predetermined film thickness, in the same manner. Copper or a copper alloy, which is a wiring material, is easily reflowed, and there is an effect that a wiring film can be formed with a good filling property even in a fine contact hole.
As described above, a high-quality integrated circuit using a copper or copper alloy wiring layer can be efficiently formed on the substrate surface, and a VLSI fine wiring film having low resistance and excellent electromigration resistance can be manufactured with high reliability.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of a large scale integrated circuit of the present invention.

FIG. 2 is a sectional view showing another embodiment of the large scale integrated circuit of the present invention.

FIG. 3 is a sectional view showing still another embodiment of the large-scale integrated circuit of the present invention.

FIG. 4 is a sectional view showing still another embodiment of the large-scale integrated circuit of the present invention.

FIG. 5 is a sectional view showing still another embodiment of the large-scale integrated circuit of the present invention.

FIG. 6 is a sectional view showing still another embodiment of the large-scale integrated circuit of the present invention.

FIG. 7 is a configuration diagram showing an embodiment of a thin film forming apparatus for a large scale integrated circuit according to the present invention.

FIG. 8 is a configuration diagram showing another embodiment of a thin film forming apparatus for a large scale integrated circuit according to the present invention.

FIG. 9 is a configuration diagram showing still another embodiment of a thin film forming apparatus for a large scale integrated circuit according to the present invention.

FIG. 10 is a configuration diagram showing still another embodiment of a thin film forming apparatus for a large scale integrated circuit according to the present invention.

FIG. 11 is a cross-sectional view showing one embodiment of the substrate rotation holding device of the thin film forming apparatus for a large scale integrated circuit of the present invention.

FIG. 12 is a diagram showing an embodiment of a substrate transfer mechanism of a thin film forming apparatus for a large scale integrated circuit according to the present invention.

FIG. 13 is a diagram showing an embodiment of a substrate carrying fork of the substrate carrying mechanism of the thin film forming apparatus for a large scale integrated circuit of the present invention.

FIG. 14 is a diagram showing another embodiment of the substrate carrying fork of the substrate carrying mechanism of the thin film forming apparatus for a large scale integrated circuit of the present invention.

FIG. 15 is a diagram showing an example of a substrate temperature control process in the method of manufacturing a large scale integrated circuit according to the present invention.

FIG. 16 is a diagram showing another embodiment of the substrate temperature control process in the method of manufacturing a large scale integrated circuit according to the present invention.

FIG. 17 is a diagram showing each embodiment of the manufacturing process of the wiring underlayer made of a copper alloy in the manufacturing method of the large-scale integrated circuit of the present invention.

FIG. 18 is a diagram showing crystallinity of titanium nitride.

FIG. 19 is a diagram showing the specific resistance of titanium nitride.

FIG. 20 is a view showing one embodiment of the substrate transfer mechanism of the present invention.

FIG. 21 is a view showing another embodiment of the substrate transfer mechanism of the present invention.

FIG. 22 is a view showing still another embodiment of the substrate transfer mechanism of the present invention.

FIG. 23 is a view showing still another embodiment of the substrate transfer mechanism of the present invention.

FIG. 24 is a sectional view showing an example of a conventional large-scale integrated circuit.

FIG. 25 is a sectional view showing an example of a conventional thin film forming apparatus for a large scale integrated circuit.

FIG. 26 is a sectional view showing another example of a conventional large-scale integrated circuit.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 substrate, 2 copper wiring layer, underlayer composed of a plurality of layers, 31 adhesion layer, 32 barrier layer, 33 wiring underlayer, 50 ion beam source, 55 vapor generating means, 5
9 ionization means, 75 power supply device, 81 substrate rotation holding device, 82 substrate temperature control mechanism, 85 nitrogen gas introducing means, 100 substrate transfer mechanism, 110 gas ion source, 12
0 magnetic field application type gas ion source, 150 magnetic field application type ion beam source, 303 substrate heating mechanism, 304 substrate cooling mechanism, 310 substrate holder, 311 substrate transfer fork.

Claims (18)

[Claims] 1. In an integrated circuit in which a wiring layer is formed on a substrate through an underlayer composed of a plurality of layers, the wiring layer is made of copper or a copper alloy, and the underlayer is
An integrated circuit comprising an adhesion layer, a barrier layer, and a wiring base layer made of a metal that easily forms an alloy with copper or a copper alloy of the wiring layer from the substrate toward the wiring layer. 2. An integrated circuit in which a wiring layer made of copper or a copper alloy is formed on a substrate through an underlayer made up of a plurality of layers including a wiring underlayer, and the wiring underlayer is titanium. An integrated circuit comprising a copper alloy formed of copper and at least one metal selected from the group consisting of silicon, aluminum and germanium. 3. In an integrated circuit in which a wiring layer made of copper or a copper alloy is formed on a substrate through an underlayer made of a plurality of layers including a wiring underlayer, the wiring underlayer is titanium. , A copper alloy formed of at least one metal selected from the group consisting of silicon, aluminum and germanium and copper, and selected from titanium, silicon, aluminum and germanium as they approach the wiring layer. An integrated circuit characterized in that the composition of at least one metal is gradually reduced with respect to the composition of copper. 4. In an integrated circuit in which a wiring layer made of copper or a copper alloy is formed on a substrate via an underlayer made up of a plurality of layers, the barrier layer included in the underlayer is integrated circuit according to any one of claims 1 to 3, characterized in that the composition X from the substrate toward the wiring layer is titanium nitride (TiN _X) thin film layer varies. 5. In an integrated circuit in which a wiring layer made of copper or a copper alloy is formed on a substrate via an underlayer made up of a plurality of layers, the barrier layer included in the underlayer is 4. The integrated circuit according to claim 1, wherein a titanium layer, a dititanium nitride layer, and a titanium nitride layer are formed in this order from a substrate toward the wiring layer. 6. In an integrated circuit in which a wiring layer made of copper or a copper alloy is formed on a substrate via an underlayer made up of a plurality of layers, the barrier layer included in the underlayer is From the substrate toward the wiring layer, a titanium layer, a titanium nitride (TiN _x ) layer whose nitrogen composition is gradually increased relative to the titanium composition, and finally a titanium nitride (TiN) layer are formed in this order. The integrated circuit according to any one of claims 1 to 3, wherein: 7. A substrate transfer mechanism for loading and unloading a substrate into and out of a vacuum chamber maintained at a predetermined degree of vacuum, a nitrogen gas introducing means for introducing nitrogen gas into the vicinity of the substrate, and rotating the substrate. A substrate temperature control mechanism that has a substrate rotation mechanism, a substrate heating mechanism that heats the substrate, and a substrate cooling mechanism that cools the substrate, and a vapor of a vapor deposition material toward the substrate. And an ionization unit for ionizing a part of the vapor of the vapor deposition material, and an acceleration means for accelerating and controlling the ionized vapor and transporting the vaporized vapor of the non-ionized vapor to the substrate. An ion beam source that is selected from the group consisting of the vapor deposition materials copper, titanium and the constituent elements of titanium and copper alloys, titanium, silicon, aluminum and germanium. The a ion beam source to be supplied to the substrate, during formation of the copper or the wiring layer formed of copper alloy, with an ion irradiation 1~500 (μA / cm ²⁾ by the ion beam source, the substrate A thin film forming apparatus for an integrated circuit, characterized in that a temperature control mechanism repeats a temperature cycle of raising and lowering the temperature. 8. A substrate transfer mechanism for loading and unloading a substrate into and out of a vacuum chamber maintained at a predetermined vacuum degree, and a mixed gas of nitrogen gas or a mixed gas containing nitrogen element, the flow rate of which is adjusted near the substrate. A substrate temperature for controlling the substrate temperature during film formation, which has a gas introducing means for introducing a substrate, a substrate rotating mechanism for rotating the substrate, a substrate heating mechanism for heating the substrate, and a substrate cooling mechanism for cooling the substrate. A control mechanism, a vapor generating means for generating vapor of the vapor deposition material toward the substrate, an ionizing means for ionizing a part of the vapor of the vapor deposition material, and an acceleration control of the ionized vapor, which is not ionized. An ion beam source composed of an accelerating means for transporting the vapor of a vapor deposition material to a substrate, wherein titanium, silicon, and Al, which are constituent elements of the vapor deposition material, copper, titanium, and a copper alloy. In a thin film forming apparatus for an integrated circuit, which comprises an ion beam source for supplying a metal selected from the group consisting of aluminum and germanium to the substrate, an inert gas introducing means provided in the vacuum chamber, and an inert gas. In addition to the gas ionization means arranged in the introduction part of the ionization means for ionizing the inert gas, and the gas ion source composed of the acceleration means for accelerating and controlling the inert gas ionized by the gas ionization means, copper or copper alloy When forming the wiring layer composed of, the copper or copper alloy is vapor-deposited while irradiating the substrate with ions by the ion beam source while irradiating the inert gas ions with the gas ion source. A thin film forming apparatus for an integrated circuit, characterized in that the temperature cycle of raising and lowering temperature is repeated by a control mechanism. . 9. The ion beam source is a magnetic field application type ion beam source comprising magnetic field application type ionization means in which a magnet for applying a magnetic field is arranged around the ionization section and on the central axis of the ionization section, and the gas ion source is a magnetic field 9. A magnetic field application type gas ion source comprising a magnetic field application type gas ionization means in which a magnet for giving a magnetic field is arranged around the ionization section and on the central axis of the ionization section.
The thin film forming apparatus described. 10. The substrate temperature control mechanism is a substrate heating mechanism,
9. The integrated circuit according to claim 7, wherein the substrate cooling mechanism includes a mechanism that can move up and down independently of each other, and the substrate rotation mechanism includes a mechanism that reverses the rotation direction for each rotation. Thin film forming equipment. 11. The thin film forming apparatus for an integrated circuit according to claim 7, wherein the substrate transfer mechanism has a stepped horseshoe-shaped substrate holder and a stepped substrate transfer fork. 12. The thin film forming apparatus for an integrated circuit according to claim 11, wherein the substrate carrying fork of the substrate carrying mechanism has a contact portion with the substrate coated with a synthetic resin. 13. The thin film forming apparatus for an integrated circuit according to claim 11, wherein the substrate carrying fork of the substrate carrying mechanism has a hollow structure. 14. An integrated circuit in which a wiring layer made of copper or a copper alloy is formed on a substrate via an underlayer made up of a plurality of layers including a wiring underlayer, and a plurality of ion beam sources are provided. The above method is characterized in that the wiring underlayer made of a copper alloy is formed by mixed vapor deposition of copper and at least one metal selected from the group consisting of titanium, silicon, aluminum, and germanium which are alloy elements. Circuit manufacturing method. 15. An integrated circuit in which a wiring layer made of copper or a copper alloy is formed on a substrate via an underlayer made of a plurality of layers, wherein nitrogen is directed toward the substrate in a vacuum chamber. While sequentially controlling the amount of gas to be introduced, titanium is vapor-deposited while irradiating the substrate with ions by an ion beam source, and titanium nitride (Ti
N _X ) A method for manufacturing an integrated circuit, wherein a barrier layer included in the underlayer composed of a thin film layer is formed. 16. An integrated circuit in which a wiring layer made of copper or a copper alloy is formed on a substrate via an underlayer made up of a plurality of layers including a barrier layer, which is in the vicinity of the substrate in a vacuum chamber. Deposition of titanium while irradiating the substrate with inert gas ions and irradiating the substrate with ions by an ion beam source while sequentially controlling the amount of the mixed gas of nitrogen gas or the mixed gas containing nitrogen element introduced into Then, the barrier layer composed of a titanium nitride (TiN _x ) thin film layer in which the composition X changes is formed, and a method of manufacturing an integrated circuit. 17. An integrated circuit in which a wiring layer made of copper or a copper alloy is formed on a substrate via an underlayer made of a plurality of layers, and the wiring layer is inert by a gas ion source when the wiring layer is formed. While irradiating gas ions, the ion beam source irradiates ions onto the substrate to deposit copper or copper alloy, and continuously raises the substrate temperature from room temperature to the reflow start temperature during the wiring layer formation. A method of manufacturing an integrated circuit, characterized in that a wiring layer is formed. 18. An integrated circuit in which a copper or copper alloy wiring layer is formed on a substrate through an underlayer composed of a plurality of layers, wherein inert gas ions are irradiated from a gas ion source when the wiring layer is formed. While, by the ion beam source,
While irradiating copper or copper alloy by irradiating ions on the substrate, after depositing a predetermined thickness of the wiring layer at the substrate temperature at room temperature, the temperature is raised to the reflow start temperature, and again cooled to room temperature, A method of manufacturing an integrated circuit, wherein a wiring layer is formed by repeating a cycle of depositing a predetermined film thickness.