JPH0786578B2 - Optical coupling circuit - Google Patents
Optical coupling circuitInfo
- Publication number
- JPH0786578B2 JPH0786578B2 JP63137418A JP13741888A JPH0786578B2 JP H0786578 B2 JPH0786578 B2 JP H0786578B2 JP 63137418 A JP63137418 A JP 63137418A JP 13741888 A JP13741888 A JP 13741888A JP H0786578 B2 JPH0786578 B2 JP H0786578B2
- Authority
- JP
- Japan
- Prior art keywords
- optical
- circuit
- guide hole
- substrate
- optical fiber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title claims description 59
- 238000010168 coupling process Methods 0.000 title claims description 17
- 230000008878 coupling Effects 0.000 title claims description 16
- 238000005859 coupling reaction Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 20
- 238000009826 distribution Methods 0.000 claims description 10
- 239000013307 optical fiber Substances 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
Description
【発明の詳細な説明】 ＜産業上の利用分野＞ 本発明は集積化に適した、光回路どうしの光結合回路に
関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial field of application> The present invention relates to an optical coupling circuit of optical circuits suitable for integration.
＜従来の技術＞ 光回路どうしの光結合に関しては、光回路間でパワー分
布が相違するので、種々の問題がある。<Prior Art> Regarding optical coupling between optical circuits, there are various problems because the power distributions differ between the optical circuits.
例えば半導体レーザの光出力を光ファイバに結合させる
場合、従来は次のような方法が採られている。For example, when coupling the optical output of a semiconductor laser to an optical fiber, the following method has been conventionally adopted.
即ち、半導体レーザからの出射ビームのパワー分布（ビ
ーム形状）と、光ファイバの固有モードのパワー分布が
大きく異なるため、光ファイバの入射端面と半導体レー
ザの出射端面とを直接近づけても結合損失が大きくなる
ので、途中に何らかの光パワー分布整合回路の介在を必
要とした。That is, since the power distribution (beam shape) of the emitted beam from the semiconductor laser and the power distribution of the eigenmode of the optical fiber are greatly different, the coupling loss does not occur even if the incident end face of the optical fiber and the emitting end face of the semiconductor laser are brought close to each other. Since it becomes large, it is necessary to interpose an optical power distribution matching circuit on the way.
第３図は従来の技術の一例を示し、半導体レーザ１の出
射端面に空間をあけて光ファイバ４の入射端面を向き合
せ、これらの間に収束用レンズ３を配置する。２は光導
波路のコアであり、この例の場合には活性層に相当して
いる。FIG. 3 shows an example of a conventional technique. A space is formed at the emitting end face of the semiconductor laser 1 so that the incident end face of the optical fiber 4 faces each other, and the converging lens 3 is arranged between them. Reference numeral 2 is a core of the optical waveguide, which corresponds to an active layer in this example.
第３図の従来技術では、今レンズ３を20倍の対物レンズ
とし、光ファイバ４を単一モードファイバとすると、各
々の相互位置を適切に調整することにより、結合損失を
1dB程度とすることができる。In the prior art of FIG. 3, assuming that the lens 3 is an objective lens with a magnification of 20 and the optical fiber 4 is a single mode fiber, the coupling loss can be reduced by appropriately adjusting the mutual position of each.
It can be about 1 dB.
しかし、レンズ３、光ファイバ４ともにミクロンオーダ
の位置の微調整が必要とされ、実現は非常に困難であ
る。また、半導体レーザ１、レンズ３、光ファイバ４の
相互の位置関係を固定して、これらを一体化したモジュ
ールを製造するに際しては、レンズ３が元来別物である
からモジュール全体が大きくなること、及び位置精度が
厳しすぎるという欠点があった。However, both the lens 3 and the optical fiber 4 require fine adjustment of the position on the order of microns, which is very difficult to realize. Further, when manufacturing the module in which the positional relationship among the semiconductor laser 1, the lens 3 and the optical fiber 4 is fixed and these are integrated, since the lens 3 is originally different, the entire module becomes large. Also, there is a drawback that the position accuracy is too strict.
一方、第４図は従来技術の他の例を示し、光ファイバ５
の先端をテーパ状で且つ球面状に加工して、半導体レー
ザ１のコア２に近づける。On the other hand, FIG. 4 shows another example of the prior art, in which the optical fiber 5
Is processed into a tapered shape and a spherical shape so as to approach the core 2 of the semiconductor laser 1.
第４図の従来技術では、結合部分をコンパクトに構成す
ることができる。In the prior art shown in FIG. 4, the connecting portion can be made compact.
しかし、半導体レーザ１と光ファイバ５の相互位置の許
容度が非常に厳しく、光軸方向と、それとの直交面内で
の２方向、それぞれに対してサブミクロンオーダの位置
の微調整が必要となるという欠点があった。However, the tolerance of the mutual position of the semiconductor laser 1 and the optical fiber 5 is very strict, and it is necessary to finely adjust the position on the order of submicron in each of the optical axis direction and two directions in a plane orthogonal to the optical axis direction. There was a drawback that
＜発明が解決しようとする課題＞ 上述した従来技術に鑑み、本発明の目的は、光結合特性
の改善と、光回路の集積化に適した光結合回路を提供す
ることにある。<Problems to be Solved by the Invention> In view of the above-mentioned conventional techniques, an object of the present invention is to provide an optical coupling circuit suitable for improving the optical coupling characteristics and integrating an optical circuit.
＜課題を解決するための手段＞ 本発明による光結合回路は、光導波回路の入射または出
射端面の近傍に形成した、光導波回路の導波路の光軸を
該光導波回路の基板内の基板厚み方向の光軸に方向転換
する反射面と、光導波回路に結合する他の回路を挿入す
るガイド穴であって、同ガイド穴の底面には該他の光回
路のパワー分布と整合する形状を有する、基板厚み方向
の出射または入射手段が形成されているガイド穴とを具
備することを特徴とするものである。<Means for Solving the Problems> In the optical coupling circuit according to the present invention, the optical axis of the waveguide of the optical waveguide circuit formed in the vicinity of the entrance or exit end face of the optical waveguide circuit is a substrate inside the substrate of the optical waveguide circuit. A reflection surface that changes direction to the optical axis in the thickness direction and a guide hole for inserting another circuit coupled to the optical waveguide circuit, and the bottom surface of the guide hole has a shape that matches the power distribution of the other optical circuit. And a guide hole in which a means for emitting or entering in the thickness direction of the substrate is formed.
＜作用＞ 上記構成において、基板厚み方向の入射または出射手段
がビーム形状を制御し、他の光回路とのパワー分布の整
合をとる。また、パワー分布を整合する入射または出射
手段とガイド穴が一体であるため、他の光回路をガイド
穴に挿入すると自動的に光軸が合う。<Operation> In the above configuration, the incident or emitting means in the thickness direction of the substrate controls the beam shape to match the power distribution with other optical circuits. Further, since the entrance or exit means for matching the power distribution and the guide hole are integrated, the optical axis is automatically aligned when another optical circuit is inserted into the guide hole.
＜実 施 例＞ 第１図、第２図を参照して本発明を詳細に説明する。<Examples> The present invention will be described in detail with reference to Figs.
第１図は、本発明の一実施例として、三次元光導波回路
６と単一モード光ファイバ13との結合を行う場合につい
て、光結合回路の断面構造を示す。三次元光導波回路６
のうち、２はコア、10は基板、11はクラッディングであ
る。14は光ファイバ13のコアである。FIG. 1 shows a cross-sectional structure of an optical coupling circuit in the case where the three-dimensional optical waveguide circuit 6 and the single mode optical fiber 13 are coupled, as an embodiment of the present invention. Three-dimensional optical waveguide circuit 6
Among them, 2 is a core, 10 is a substrate, and 11 is a cladding. 14 is the core of the optical fiber 13.
三次元導波回路６には、コア２の近傍に、出射ビームを
基板10の厚み方向に反射する反射面７を形成してある。
また基板10の反射光軸上に光ファイバ13挿入用のテーパ
状ガイド穴９を明け、ガイド穴９の底部に出射面として
レンズ面８を形成してある。なお、出射と入射を逆にし
ても同じである。In the three-dimensional waveguide circuit 6, a reflecting surface 7 that reflects the outgoing beam in the thickness direction of the substrate 10 is formed near the core 2.
Further, a tapered guide hole 9 for inserting the optical fiber 13 is formed on the reflection optical axis of the substrate 10, and a lens surface 8 is formed at the bottom of the guide hole 9 as an emission surface. The same applies even if the emission and the incidence are reversed.
今、三次元光導波回路６をInP系の半導体で作成した場
合について説明する。コア２はInGaAsPで厚さ0.1μm,巾
３μｍのものであり、クラッディング11はInPで厚さ３
μｍのものをInPの基板10に通常の液相成長法で作成し
た。この光導波回路６の固有スポットサイズは約１μｍ
であり、一方単一モード光ファイバ13の固有モードスポ
ットサイズは約10μｍである。したがってこのビームス
ポットサイズの不整合を何らかの手段で整合させてやる
必要がある。Now, a case where the three-dimensional optical waveguide circuit 6 is made of an InP-based semiconductor will be described. The core 2 is InGaAsP with a thickness of 0.1 μm and a width of 3 μm, and the cladding 11 is InP with a thickness of 3 μm.
A substrate having a thickness of μm was formed on the InP substrate 10 by a normal liquid phase growth method. The characteristic spot size of this optical waveguide circuit 6 is about 1 μm.
On the other hand, the eigenmode spot size of the single mode optical fiber 13 is about 10 μm. Therefore, it is necessary to match this beam spot size mismatch by some means.
第１図はその一例を示したものであり、プレーナ型光集
積回路としてある。反射面７が45度の傾き角で形成され
ているとすると導波された光は反射面７で反射され、基
板10の厚さ方向に放射モードとして拡がりながら伝搬す
る。導波モードから空気中に放射する場合には、光パワ
が1/eに減少するまでの放射角として定義する角度が約2
0度である。したがって、InP基板10の屈折率を波長1.3
μｍ帯で約3.2とすると、基板10内の放射角は約6.2度と
なる。今導波路２の反射面７から基板10の出射面８まで
の距離が約92μｍあるとすると、基板10内での放射ビー
ム15は拡がり、出射面８で約10μｍのスポットサイズと
なる。したがって、このスポットサイズのビームを空気
中に平行ビームとして出射させることができれば、光フ
ァイバ13と対向させるだけで非常に高い効率で結合させ
る事ができる。第１図の出射面８はその為のコリメート
用レンズ面であり、この場合には半径約63μｍの球面で
出射光は平行ビームとなる。この球面の有効径は約15μ
ｍ以上であれば良い。FIG. 1 shows an example thereof, which is a planar type optical integrated circuit. If the reflecting surface 7 is formed with an inclination angle of 45 degrees, the guided light is reflected by the reflecting surface 7 and propagates while spreading as a radiation mode in the thickness direction of the substrate 10. When radiating from the guided mode into the air, the angle defined as the radiation angle until the optical power decreases to 1 / e is about 2
It is 0 degrees. Therefore, the InP substrate 10 has a refractive index of 1.3
If it is about 3.2 in the μm band, the radiation angle in the substrate 10 will be about 6.2 degrees. Assuming that the distance from the reflecting surface 7 of the waveguide 2 to the exit surface 8 of the substrate 10 is about 92 μm, the radiation beam 15 in the substrate 10 spreads and the spot size at the exit surface 8 is about 10 μm. Therefore, if a beam of this spot size can be emitted into the air as a parallel beam, it can be coupled with very high efficiency simply by facing the optical fiber 13. The exit surface 8 in FIG. 1 is a collimating lens surface for that purpose. In this case, the exit light is a parallel beam with a spherical surface having a radius of about 63 μm. The effective diameter of this spherical surface is about 15μ
It may be m or more.
第１図のガイド穴９は光ファイバ13の光軸を自動的に合
わせるためのテーパ状の穴であり、外径125μｍの光フ
ァイバが挿入されるようにしてある。外径130μｍ、深
さ約50μｍのゆるいテーパ状ガイド穴９で単一モード光
ファイバ13と上記光導波回路６との結合を行ったとこ
ろ、結合損失が3dB以下の良好な特性が容易に得られ
た。これは後で述べるフォトリソグラフィの製造法で作
製されたガイド穴９の中心と光軸がサブミクロンのオー
ダーで一致している事と、レンズ面８からの出射ビーム
が平行ビームになっているので軸合わせの許容度が大き
いことのためである。The guide hole 9 in FIG. 1 is a tapered hole for automatically aligning the optical axis of the optical fiber 13, and an optical fiber having an outer diameter of 125 μm is inserted therein. When the single mode optical fiber 13 and the optical waveguide circuit 6 were coupled through the loose tapered guide hole 9 having an outer diameter of 130 μm and a depth of about 50 μm, good characteristics with a coupling loss of 3 dB or less were easily obtained. It was This is because the center of the guide hole 9 manufactured by the photolithography manufacturing method described later coincides with the optical axis on the order of submicrons, and the beam emitted from the lens surface 8 is a parallel beam. This is because the tolerance of axis alignment is large.
次に上述した光結合回路の製造法について第２図を参照
して説明する。即ち、第２図は製造法のブロック図を示
したもので（ａ）から（ｄ）の四工程で回路を作製し
た。Next, a method of manufacturing the above-described optical coupling circuit will be described with reference to FIG. That is, FIG. 2 shows a block diagram of the manufacturing method, and a circuit was manufactured by the four steps (a) to (d).
工程（ａ）は導波路２に反射面７を設ける工程であり、
三次元光導波回路６の光軸に直角な方向にスリット巾約
10μｍのレジスト12−１を付け、BCl3のリアクティブイ
オンビームに対して45度に傾けてドライエッチングを行
った。その結果を右側に示す。エッチングレートは約0.
6μm/分であり、溝は深さ４μｍ以上とした。The step (a) is a step of providing the reflecting surface 7 on the waveguide 2,
The slit width is approximately perpendicular to the optical axis of the three-dimensional optical waveguide circuit 6.
A resist 12-1 having a thickness of 10 μm was attached, and dry etching was performed while tilting at an angle of 45 ° with respect to the reactive ion beam of BCl 3 . The results are shown on the right. The etching rate is about 0.
The groove had a depth of 4 μm or more.
次に工程（ｂ）は光ファイバ用のガイド穴９を開ける工
程であり、直径130μｍの穴あき円形パターンを基板10
の裏に、両面マスクアライナを使用して三層レジスト幕
12−２を形成した。エッチングはBCl3ガスにArガスを混
入したリアクティブイオンビームで行い、約50μｍ以上
の深さをエッチングした。エッチングレートは0.8μm/
分以上取ることができ、マスクの後退によって自然にゆ
るいテーパ状の穴とすることができた。Next, the step (b) is a step of forming the guide hole 9 for the optical fiber, in which a perforated circular pattern having a diameter of 130 μm is formed on the substrate 10.
On the back of the, using a double-sided mask aligner, three-layer resist curtain
12-2 was formed. The etching was performed by a reactive ion beam in which Ar gas was mixed with BCl 3 gas, and the etching was performed to a depth of about 50 μm or more. Etching rate is 0.8 μm /
It was possible to take more than a minute, and it was possible to form a taper hole that was naturally loose by retreating the mask.
工程（ｃ）は光ファイバのストッパ用段差16を形成する
ことを、導波路からの距離を精密に制御してエッチング
するための工程であり、直径80μｍの円形パターンを持
つレジスト12−３を形成して同様にエッチングした。The step (c) is a step for forming the step 16 for the stopper of the optical fiber for etching by precisely controlling the distance from the waveguide, and forming a resist 12-3 having a circular pattern with a diameter of 80 μm. And etched in the same manner.
工程（ｄ）はガイド穴９の底部に出射面としてレンズ面
８を形成する工程であり、直径30μｍの円形レジスト12
−４を形成し、現像条件を調整することによって半径約
64μｍの球面を持つレジストパタンを形成する。その後
同様にBCl3でドライエッチングして所期の球面を形成す
ることができた。The step (d) is a step of forming the lens surface 8 on the bottom of the guide hole 9 as an emission surface, and the circular resist 12 having a diameter of 30 μm.
-4 is formed and the radius is adjusted by adjusting the development conditions.
A resist pattern having a spherical surface of 64 μm is formed. After that, dry etching was similarly performed with BCl 3 to form a desired spherical surface.
これらの工程（ａ）〜（ｄ）はマスクとマスクアライナ
で決定される精度で位置合わせが行なえるため、位置精
度はサブミクロンのオーダで達成できているものと思わ
れる。なお、レンズ面８はレジストそのものを用いても
良いし、ポリイミド等のプラスチック材料で形成するこ
ともできる事は言うまでもない。Since these steps (a) to (d) can perform alignment with the accuracy determined by the mask and the mask aligner, it is considered that the positional accuracy can be achieved on the order of submicron. It is needless to say that the lens surface 8 may be made of a resist itself or may be made of a plastic material such as polyimide.
実施例の場合には平行ビームとして取り出すようにレン
ズ面８を形成したが、ある距離で焦点を結ぶようなレン
ズ面を形成することができる事は言うまでもない。In the case of the embodiment, the lens surface 8 is formed so as to be extracted as a parallel beam, but it goes without saying that a lens surface that focuses at a certain distance can be formed.
更に、出射面（または入射面）８は球面レンズに形成す
る他、凹面に形成しても良く、あるいは、グレーティン
グ（回折格子）を形成しても良く、更には、フラット面
に誘電体膜を形成するなど、光パワー分布を整合する形
状に加工すれば良い。Further, the emitting surface (or the incident surface) 8 may be formed as a spherical lens, may be formed as a concave surface, or may be formed as a grating (diffraction grating), and further, a dielectric film may be formed on a flat surface. It may be formed into a shape that matches the optical power distribution.
また更に、上記実施例では光ファイバ13を結合対象とし
たが、光導波回路どうしの結合であっても良くその場合
には必ずしもガイド穴９を必要としない。Furthermore, although the optical fiber 13 is used as the coupling target in the above embodiment, the optical waveguide circuits may be coupled to each other, and in that case, the guide hole 9 is not necessarily required.
＜発明の効果＞ 以上説明したように本発明によれば、導波路の光軸を基
板厚み方向に変える反射面と、光パワー分布を整合させ
るレンズ面等の出射または入射手段を底面に有するガイ
ド穴とを備え、これらはフォトリソグラフィ技術で形成
できるため以下に記すような利点がある。<Effects of the Invention> As described above, according to the present invention, a guide having on the bottom surface a reflecting surface that changes the optical axis of the waveguide in the thickness direction of the substrate and an emitting or incident means such as a lens surface that matches the optical power distribution. Since the holes are provided and they can be formed by a photolithography technique, there are advantages as described below.
（ｉ） プレーナ型光集積回路の入出力回路を容易に形
成することができる。(I) The input / output circuit of the planar type optical integrated circuit can be easily formed.
（ii） ビームスポットサイズの異なる光回路どうしを
容易に、光軸を自動的に合わせて、かつ結合損失少なく
スタックできる。(Ii) Optical circuits with different beam spot sizes can be easily stacked by automatically aligning the optical axes and reducing coupling loss.
（iii） 光集積回路を上下に何枚もスタックして相互
に光の結合を行うことができる。(Iii) Multiple optical integrated circuits can be stacked one above the other to couple light to each other.
（iv） 精度良く、大量生産が容易である。(Iv) Accurate and easy to mass-produce.
第１図は本発明による光結合回路の一実施例の構成図、
第２図はその製造法を示す工程図、第３図と第４図はそ
れぞれ従来の光結合法を示す説明図である。 図面中、２はコア、６は三次元光導波回路、７は反射
面、８は出射または入射手段としてのレンズ面、９はガ
イド穴、10は基板、11はクラッディング、12−１から12
−４はレジスト、13は光ファイバ、14はコア、15は基板
内のビーム、16は段差である。FIG. 1 is a block diagram of an embodiment of an optical coupling circuit according to the present invention,
FIG. 2 is a process diagram showing the manufacturing method, and FIGS. 3 and 4 are explanatory diagrams showing the conventional optical coupling method. In the drawing, 2 is a core, 6 is a three-dimensional optical waveguide circuit, 7 is a reflecting surface, 8 is a lens surface as an emitting or entering means, 9 is a guide hole, 10 is a substrate, 11 is cladding, and 12-1 to 12
-4 is a resist, 13 is an optical fiber, 14 is a core, 15 is a beam in the substrate, and 16 is a step.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 奥 哲 東京都千代田区内幸町１丁目１番６号 日 本電信電話株式会社内 (56)参考文献 特開 昭55−101906（ＪＰ，Ａ) 特開 昭61−241712（ＪＰ，Ａ) 特開 昭50−115050（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Satoshi Oku 1-1-6 Uchisaiwaicho, Chiyoda-ku, Tokyo Nihon Telegraph and Telephone Corporation (56) Reference JP-A-55-101906 (JP, A) JP 61-241712 (JP, A) JP-A-50-115050 (JP, A)
Claims (1)
形成した、光導波回路の導波路の光軸を該光導波回路の
基板内の基板厚み方向の光軸に方向転換する反射面と、 光導波回路に結合する他の光回路を挿入するガイド穴で
あって、同ガイド穴の底面には該他の光回路のパワー分
布と整合する形状を有する、基板厚み方向の出射または
入射手段が形成されているガイド穴とを具備することを
特徴とする光結合回路。1. A reflection surface, which is formed in the vicinity of the entrance or exit end face of the optical waveguide circuit, and which redirects the optical axis of the waveguide of the optical waveguide circuit to the optical axis in the substrate thickness direction within the substrate of the optical waveguide circuit. A guide hole for inserting another optical circuit coupled to the optical waveguide circuit, the guide hole having a shape matching the power distribution of the other optical circuit on the bottom surface of the guide hole. An optical coupling circuit, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63137418A JPH0786578B2 (en) | 1988-06-06 | 1988-06-06 | Optical coupling circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63137418A JPH0786578B2 (en) | 1988-06-06 | 1988-06-06 | Optical coupling circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01307707A JPH01307707A (en) | 1989-12-12 |
| JPH0786578B2 true JPH0786578B2 (en) | 1995-09-20 |
Family
ID=15198167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63137418A Expired - Fee Related JPH0786578B2 (en) | 1988-06-06 | 1988-06-06 | Optical coupling circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0786578B2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0658784A3 (en) * | 1991-02-08 | 1995-08-23 | Siemens Ag | Opto-electronic component for coupling and decoupling of radiation. |
| DE4137625C1 (en) * | 1991-11-15 | 1992-10-15 | Jenoptik Carl Zeiss Jena Gmbh, O-6900 Jena, De | |
| FR2685098B1 (en) * | 1991-12-12 | 1995-02-10 | Andre Schiltz | METHOD OF MOUNTING AND OPTICAL COUPLING ON A SUBSTRATE AND SUBSTRATE PROVIDED WITH OPTICAL FIBER. |
| JP2591723Y2 (en) * | 1992-07-06 | 1999-03-10 | 京セラ株式会社 | Connection structure between optical waveguide and optical device |
| JPH0786555A (en) * | 1993-09-16 | 1995-03-31 | Hitachi Ltd | Three-dimensional optical / electronic integrated circuit |
| JP3895250B2 (en) * | 2002-09-30 | 2007-03-22 | 住友大阪セメント株式会社 | Optical waveguide device |
| US7389013B2 (en) * | 2004-09-30 | 2008-06-17 | Stmicroelectronics, Inc. | Method and system for vertical optical coupling on semiconductor substrate |
| JP4796950B2 (en) | 2006-02-03 | 2011-10-19 | 日本碍子株式会社 | Optical device |
| JP4796951B2 (en) * | 2006-02-03 | 2011-10-19 | 日本碍子株式会社 | Optical device |
| JP2010286549A (en) * | 2009-06-09 | 2010-12-24 | Nec Corp | Light signal processing circuit, semiconductor device with the light signal processing circuit, and method of manufacturing the light signal processing circuit |
| JP5338652B2 (en) * | 2009-12-22 | 2013-11-13 | 日本電気株式会社 | Optical coupler |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50115050A (en) * | 1974-02-20 | 1975-09-09 | ||
| JPS5922205B2 (en) * | 1979-01-31 | 1984-05-25 | 沖電気工業株式会社 | optical plane circuit |
| JPS61241712A (en) * | 1985-04-18 | 1986-10-28 | Matsushita Electric Ind Co Ltd | Input-output device for guided light |
-
1988
- 1988-06-06 JP JP63137418A patent/JPH0786578B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01307707A (en) | 1989-12-12 |
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