JPH0786162A - Heterostructure thin film growth method and apparatus - Google Patents

Abstract

(57) [Summary] [Object] To provide a growth method of a heterostructure thin film having an extremely steep and high-quality interface, which is indispensable for a superlattice device such as an HBT, and an apparatus therefor. [Structure] When growing a heterostructure thin film composed of two kinds of semiconductor thin films, after the growth of one thin film, the step of interrupting the supply of the thin film raw material to the substrate for a predetermined time is included once or more. A method of growing a heterostructure thin film by supplying the other thin film raw material. And a heterostructure thin film growth apparatus provided with a substrate shutter for interrupting supply of a thin film raw material to a substrate for a predetermined time. [Effect] Since the raw materials can be rapidly switched at the hetero interface, there is no growth of a thin film having an abnormal composition due to the mixture of the raw materials at the interface, and a steep and high quality hetero film suitable for a superlattice device is obtained. A structural thin film can be easily produced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for growing a crystal of a compound semiconductor thin film and an apparatus therefor, and more particularly to a method for growing a compound semiconductor heterostructure thin film having a good quality and a steep hetero interface and an apparatus for carrying it out.

[0002]

2. Description of the Related Art Gas Source Molecular Beam Epitaxy, which is a conventional semiconductor thin film growth technique using gas as a thin film raw material, is hereinafter referred to as GSMB.
Examples of the method for forming a compound semiconductor thin film include those described in JP-A-57-30322 or JP-A-61-222112. Figure 9 shows GS
It is a schematic diagram which shows an example of a structure of an MBE apparatus. Hereinafter, the growth of a III-V compound semiconductor thin film of the periodic table of elements will be described as an example. The substrate 24 on which the thin film is to be grown is placed in the growth container 9 held in a vacuum atmosphere and heated by the substrate heat source 8 to an arbitrary temperature. On the other hand, the solid IIIa22 and the solid IIIb23, which are group III thin film raw materials, are filled in the commonly used solid source molecular beam cells 4 and 5, and heated on a desired temperature to evaporate, and then on the substrate 24. Is supplied to. Gaseous Va25 and Vb 2 used as thin film raw materials of group V
6 is filled in the respective cylinders 20 and 21, introduced into the same cracking cell 3 via the valves 1a and 2a, heated to an arbitrary temperature and decomposed, and then supplied to the substrate 24. Shutters 3a, 4a, 5a are provided on each of the solid source molecular beam cells 4, 5 and the cracking cell 3.
Are respectively provided. By the way, for example III-
When a heterostructure thin film composed of two or more kinds of semiconductor thin films of different V groups, IIIaVa and IIIbVb, is grown in the group V compound semiconductor thin film, the group III and the group V supplied to the substrate 24 at the hetero interface are grown. A raw material switching process is required. The switching of the raw material at the hetero interface in the conventional GSMBE apparatus has been performed in the following steps. First, the IIIaVa thin film is applied to the valve 1a and the shutter 3.
The openings a and 4a are opened, the group IIIa and Va group raw materials are simultaneously supplied to the substrate 24, and normal MBE growth is performed for a predetermined time. After that, the shutter 4a is closed and the supply of IIIa is stopped.
The growth of the IIaVa thin film is completed. At this time, the Va group raw material, which is a V group raw material having a high vapor pressure and a low deposition efficiency, is continuously supplied to the substrate 24. Then close the valve 1a,
The valve 2a is opened, and the raw material introduced into the cracking cell 3 is switched from Va to Vb. During this period, the Group V raw material
The supply to the substrate 24 is continued. After this, the shutter 5
Open a and start the growth of the IIIbVb thin film.

[0003]

However, conventionally, since the group V raw material was switched at the hetero interface while supplying the raw material to the substrate, the Va raw material and the Vb raw material were provided on the substrate.
The raw materials are mixed temporarily, and as a result, the group III and V are locally mixed in the vicinity of the hetero interface of the formed thin film.
A thin film in which the composition ratio of the group differs from the desired composition ratio, for example, IIIa
IIIa such as VaVb, IIIaVb, IIIaIIIbVaVb
There is a problem that a thin film is formed by mixing thin film raw materials of group III, group Va, group IIIb, group Vb, etc., the steepness of the hetero interface decreases, and the quality deteriorates. FIG. 10 shows InGa-A which is a III-V group compound semiconductor thin film grown by the conventional method.
After selectively removing the heterostructure thin film composed of s and InP using only a hydrochloric acid-based etchant, InGaA
The result of having measured the element of the s interface by Auger electron spectroscopy is shown. In addition to In, Ga, and As, an Auger spectrum showing the presence of P is clearly shown, and it is speculated that a thin film containing P is grown at the interface. FIG. 11 shows the result of measurement by a two-crystal X-ray diffraction method for a heterostructure thin film composed of InGaAs and InP grown by the same conventional method as described above. Compared with the X-ray diffraction spectrum from the InP substrate,
The X-ray diffraction spectrum from InGaAs is very weak, and a broad spectrum having a half width is obtained. FIG. 12 shows the results obtained by measuring the InGaAs / InP quantum wells with a quantum well width of 25 Å grown by the conventional method at the liquid nitrogen temperature and measuring by the photoluminescence method. The obtained photoluminescence spectrum has a wide half-width and a very broad spectrum. From the above results, InGa grown by the conventional technique
The As and InP heterostructure thin films have poor crystallinity at the interface and show that the composition does not change sharply. As described above, when a thin film in which the composition ratio of the group III and the group V does not change sharply at the hetero interface and locally differs from the desired composition ratio, the occurrence of strain at the hetero interface and the energy band It goes without saying that the crystal defects and performance characteristics of electronic devices and optical devices are greatly affected by the fact that the structure cannot be controlled. Among them, especially in a hetero bipolar transistor (hereinafter abbreviated as HBT), the current gain,
This is one of the causes of remarkably degrading device characteristics such as operating speed. In the above description, InGaAs and InP
Although only the growth of a heterostructure thin film made of is mentioned, similar problems are caused by, for example, InGaP and GaAs, Zn.
It also occurs during the growth of heterostructure thin films of other materials such as S and ZnSe.

An object of the present invention is to solve the above-mentioned problems in the prior art, and particularly in a growth method of a superlattice device such as HBT which requires a steep hetero interface, an extremely steep and good quality hetero interface. A method for growing a heterostructure thin film having the above and an apparatus for implementing the same.

[0005]

In order to achieve the above-mentioned object of the present invention, the growth method of a heterostructure thin film of the present invention is the principle of the growth method of the present invention, for example, the thin film growth step shown in FIG. Is used. First, the supply of the Group IIIa source material to the substrate is stopped, and the growth of the IIIaVa thin film is completed. At this time, the supply of the Va group raw material continues for t ₁ hours. Then, the supply of the Va group source material to the substrate is stopped, and the supply of any thin film source material to the substrate is interrupted for t ₂ hours. for t ₂ hours,
After maintaining the above condition, Vb which is a IIIbVb thin film raw material
The supply of one of the group b raw material and the group IIIb raw material is first restarted, and after t ₃ hours, the supply of the other raw material is started, or both of them are simultaneously supplied to start the growth of the IIIbVb thin film. Note that FIG. 1 shows a sequence diagram in which the supply of the Vb group raw material is first restarted and the supply of the IIIb group raw material is started after t ₃ hours. The method for growing a heterostructure thin film of the present invention, on a substrate held in a vacuum atmosphere, a desired thin film constituent component, or a raw material gas containing a thin film constituent component is introduced via a raw material supply cell, A method for forming a desired heterostructure thin film by a phase reaction, comprising a II-VI group semiconductor thin film or III-
In a method for growing a heterostructure thin film composed of two or more different semiconductor thin films selected from group V semiconductor thin films or both semiconductor thin films, a first semiconductor thin film is grown on the substrate, A step of depositing one or more molecular layers of a group V element or a group VI element constituting the first semiconductor thin film, and introduction of a constituent gas of any thin film or a source gas containing the constituent constituent of the thin film into the substrate, A step of including at least one or more steps of interrupting for a predetermined time, and then introducing a constituent gas of the second semiconductor thin film forming the heterostructure thin film or a source gas containing the constituent gas onto the substrate to form a film. This is a method for growing a heterostructure thin film containing at least. The surface coating layer of the group V element or the group VI element deposited on the substrate is kept for a predetermined time during which the introduction of all the constituent components of the thin film or the source gas containing the constituent components of the thin film to the substrate is interrupted. The desorption time from the substrate required to form one molecular layer is set. In the method for growing a heterostructure thin film of the present invention, the heterostructure thin film is formed after the introduction of all the constituent components of the thin film or the source gas containing the constituent components into the substrate is interrupted for a predetermined time. Is a component of the semiconductor thin film of
Group III component or Group II component, or Group III component or II
A source gas containing a group component is introduced on the substrate in a predetermined amount,
Next, there is provided a method for growing a heterostructure thin film in which a constituent gas of the second semiconductor thin film or a source gas containing the constituent gas is introduced onto the substrate. Then, the introduction amount of the group III component or the group II component or the source gas containing the group III component or the group II component, which is the constituent component of the second semiconductor thin film forming the heterostructure thin film, to the substrate is Element or I
This is a method for growing a heterostructure thin film in which the amount of the group I element is an integral multiple of the amount required to form one molecular layer on the substrate. The growing heterostructure thin film is a method for growing a heterostructure thin film which is a base, an emitter or a collector and a base in a heterobipolar transistor, and the constituent components of the thin film or the source gas containing the constituent components is II, II
This is a method for growing a heterostructure thin film using a source gas containing at least two or more elements selected from the group I, IV, V and VI elements. Furthermore, the constituent components of the thin film or the source gas containing the constituent components are arsine and phosphine in the method for growing a heterostructure thin film. Further, two or more different semiconductor thin films forming the heterostructure thin film are I
nP, InGaAs, GaAs, InGaP, GaS
b, InGaAsP, InAs, GaP, ZnS, Zn
This is a growth method of a heterostructure thin film composed of a combination of two or more selected from SSe, ZnSe, and ZnCdSe. The heterostructure thin film growth apparatus of the present invention comprises a heating means for arranging a predetermined substrate in a thin film growth container held in a vacuum atmosphere, heating the substrate to an arbitrary temperature, and facing the substrate. At each position, a raw material supply cell for introducing a desired thin film constituent or a raw material gas containing the thin film constituent is provided, and the raw material supply cell has at least one shutter dedicated to each cell. In the heterostructure thin film growth apparatus, between the substrate and the raw material supply cell, a part or all of the constituent gas of the thin film introduced into the substrate from each of the cells or the raw material gas containing the constituent component of the thin film is provided. The apparatus for growing a heterostructure thin film is provided with at least one shutter having a structure capable of freely blocking for any set time. Further, the above-mentioned heterostructure thin film growth apparatus is configured such that between the substrate and the raw material supply cell, a component of the thin film introduced into the substrate from each of the cells or a part of the raw material gas containing the thin film constituent component. Alternatively, it is an apparatus for growing a heterostructure thin film, which comprises means for growing a thin film based on the above-described method for growing a heterostructure thin film of the present invention, using a shutter having a structure capable of shutting off all or a set time.

[0006]

After the growth of the IIIaVa thin film, the supply of the Va group raw material is continued for t ₁ hour, whereby the substrate surface is completely covered with one or more molecular layers of the Va group element. After that, the supply of the Va group raw material is stopped, and the supply of any thin film raw material to the substrate is temporarily stopped for t ₂ hours. At this time, the group V raw materials simultaneously introduced into the cracking cell are switched from Va to Vb. In addition, during this period, desorption of the Va group element excessively deposited on the substrate surface from the substrate surface proceeds. Supply interruption time t of thin film raw material
₂ is the time when the excess Va group element is desorbed on the substrate surface and the coverage becomes 1 (one molecular layer). As a result, the surface of the substrate is completely covered with the Va group element of one molecular layer. Thereafter, the supply of one of the Vb group raw material and the IIIb group raw material is first restarted, and then, after t ₃ hours, the other raw material is supplied to start the growth of the IIIbVb thin film. For t ₃ hours, the supply amount of the Vb group raw material or the IIIb group raw material is Vb for one molecular layer or an integral multiple thereof on the substrate surface.
The time is adjusted so that the amount required to form the group element or the group IIIb element is reached. Further, there is no problem even if the IIIb and Vb group raw materials are simultaneously supplied without especially providing the time t ₃ .
By adopting the above steps, it is possible to rapidly switch the thin film components supplied to the substrate. Further, since the group V raw material is switched without supplying the group V raw material to the substrate, growth of a thin film having an abnormal composition due to the mixture of the thin film raw materials at the hetero interface is suppressed. Further, by adjusting the supply interruption time t ₂ and the supply time t ₃ of one of the thin film raw materials according to the above-mentioned means, it is possible to suppress the deposition of the excessive group V element or the group III element at the hetero interface, and to make it extremely steep. A good quality heterostructure thin film having a desired composition ratio can be realized.

[0007]

Embodiments of the present invention will be described below in more detail with reference to the drawings. <Example 1> In the present example, In is deposited on an InP substrate.
A method of growing a heterostructure thin film composed of GaAs and InP will be described. As the thin film raw material, solid In and solid Ga were used as group III raw materials, and arsine (AsH ₃ ) and phosphine (PH ₃ ) were used as group V raw materials.
FIG. 2 shows an example of a sequence for supplying various thin film raw materials to the substrate based on the growth method of the heterostructure thin film in this embodiment. FIG. 3 shows the GSMBE used in this example.
It is a schematic diagram which shows the structure of a (gas source molecular beam epitaxy) apparatus. In FIG. 2, the same parts as those of the conventional GSMBE device (FIG. 9) are designated by the same reference numerals. The InP substrate 6 on which the heterostructure thin film is grown is placed in the growth container 9 which is held in a vacuum atmosphere. On the other hand, the solid In10 and the solid Ga11 are filled in the solid source molecular beam cells 4 and 5, heated to an arbitrary temperature and evaporated, and then supplied to the InP substrate 6. The cylinder 1 filled with arsine 12 and the cylinder 2 filled with phosphine 13 are respectively provided with a valve 1
a, the valve 2a, and then introduced into the same cracking cell 3, heated to an arbitrary temperature and decomposed, and then As ₂ , P ₂
Is supplied to the InP substrate 6. The solid source molecular beam cells 4 and 5 and the cracking cell 3 are provided with shutters 3a, 4a and 5a, respectively. The GSMBE apparatus shown in FIG. 3 was used to grow a heterostructure thin film of InGaAs and InP by the following procedure by the raw material supply sequence shown in FIG. First, InGaA
After opening the valves 1a, shutters 3a, 4a, 5a, and substrate shutter 7, the thin film, the group III and group V raw materials are simultaneously supplied, and ordinary MBE growth is performed for a predetermined time, and then the shutters 4a, 5a are opened. Then, the growth of the InGaAs thin film was completed. After that, arsenic (A
s) surface, the valve 1a, the shutter 3a, and the substrate shutter 7 are kept open for 2 seconds.
Only s ₂ was excessively supplied to the InP substrate 6. After that, only the substrate shutter 7 was closed, and the supply of any thin film raw material to the InP substrate 6 was interrupted for 24 seconds. At this time, the valve 1a is simultaneously closed and the valve 2a is opened. This interruption time is 24 seconds in this embodiment, but InG
The re-evaporation of excess As covering the surface of the aAs thin film is promoted, and finally the coverage of As covering the InP substrate 6 is 1 (1 of As).
(Molecular layer). Furthermore, at this time InP
The temperature of the substrate 6 is adjusted by the substrate heat source 8 so that the adhesion of residual impurities such as carbon (C) remaining in the growth vessel 9 to the InP substrate 6 does not affect the crystal quality sufficiently. It is desirable to adjust to. Further, by closing the substrate shutter 7 during the interruption time, there is an effect that impurities or thin film components remaining in the growth container 9 can be prevented from directly entering the InP substrate 6. Further, when the valve 1a is switched to the valve 2a at the same time as the supply of the raw material is interrupted, the gas such as arsine or arsenic hydride remaining between the valve 1a and the cracking cell 3 is opened by the shutter 3a. It is efficiently evacuated into the growth chamber 9 and is filled with a gas containing phosphorus (P) such as phosphine or phosphorus hydride instead. Of course, at this time, there is no problem even if the valve 1a is switched to the valve 2a while the substrate shutter 7 is open and only the shutter 3a is closed, or both of them are closed. After the supply of the raw material is interrupted, the substrate shutter 7 is opened again, so that only P ₂ is supplied to the InP substrate 6. After that, P ₂ is supplied to the InP substrate 6 for the purpose of covering the surface of the InP substrate 6 with phosphorus for 2 seconds.
In that opens a and forms a heterostructure with the InGaAs thin film
The growth of the P thin film is started. The supply time of P ₂ is set to 2 seconds in the present embodiment, but the supply time of the P ₂ amount required for phosphorus to form one molecular layer or an integral multiple of one molecular layer on the InP substrate 6 is set. It is desirable to adjust.

Example 2 FIG. 4 shows a raw material supply sequence for growing a heterostructure thin film in this example. The same steps as those in Example 1 were adopted up to the step of interrupting the supply of the thin film raw material to the InP substrate 6 at the hetero interface. After that, by opening the shutter 4a and the substrate shutter 7, In and P ₂ are simultaneously supplied to the InP substrate 6, and the growth of the InP thin film forming the heterostructure with the InGaAs thin film is started. A heterostructure thin film was grown on.

<Embodiment 3> FIG. 5 shows a raw material supply sequence for growing a heterostructure thin film in this embodiment. The same steps as in Example 1 were adopted up to the step of interrupting the supply of the thin film raw material to the InP substrate 6 at the hetero interface. After that, the shutter 3a was closed, the shutter 4a and the substrate shutter 7 were opened, and In was supplied to the InP substrate 6 for 1.6 seconds. In is supplied to InP for 1.6 seconds.
This is the supply time of the amount of In required for forming one molecular layer on the substrate 6. In the present embodiment, the supply time of the In amount for one molecular layer is used, but In for an integral multiple of one molecular layer
There is no problem in supplying the amount. After that, the shutter 3a is opened, P ₂ and In are simultaneously supplied to the InP substrate 6, and the growth of the InP thin film forming the heterostructure with the InGaAs thin film is started, and the growth of the heterostructure thin film is performed as in the first embodiment. I went. As described above, according to the embodiment of the present invention, As ₂ and P ₂ are completely separated and supplied at the hetero-interface, so that, for example, InGaAsP, InA are formed at the hetero-interface.
It was possible to obtain a steep heterostructure thin film having a desired V-III group ratio without forming a thin film of sP or InAs. In FIG. 6, In
In a heterostructure thin film composed of InGaAs and InP grown on a P substrate, only InP is selectively removed with a hydrochloric acid-based etchant, and the results of measuring the elements at the InGaAs interface by Auger electron spectroscopy are shown. No Auger spectrum showing the presence of elements other than In, Ga and As was observed,
This indicates that there is no thin film having an abnormal composition containing phosphorus (P), which has been a problem in the past. Further, FIG. 7 shows a result of measuring the same heterostructure thin film by a two-crystal X-ray diffraction method. The diffraction spectrum from the InGaAs thin film is InP
The diffraction intensity and the half width (2θ) equivalent to the X-ray diffraction spectrum from the substrate were obtained. FIG. 8 shows InGaAs / In having a quantum well width of 25 Å grown according to the above-mentioned embodiment.
The result of having measured P quantum well by liquid nitrogen temperature and measured by the photoluminescence method is shown. The obtained photoluminescence spectrum has a half-width (2θ) of
The photoluminescence spectrum from the quantum wells of the same structure grown according to the conventional method is clearly reduced, and a sharp waveform is obtained. Using the method for growing a heterostructure thin film of the present invention described above,
It is obvious that a heterostructure thin film having good crystallinity and composition ratio and having a steep interface can be easily realized, and a superlattice device requiring a steep heterointerface, for example, HB.
It is extremely effective in producing T. In the above-described method for growing a heterostructure thin film of the present invention, arsine and phosphine were described as a method of supplying the substrates in the growth vessel by using the same cracking cell, but the same applies even if each cracking cell is used individually. It goes without saying that the effect of can be obtained. Further, in the above-mentioned embodiment, the heterostructure thin film made of InGaAs and InP is explained, but other materials such as GaAs and InGaP for III-V semiconductors and II-V semiconductors are used.
It has been confirmed that the present invention can be applied to the growth of heterostructure thin films having other configurations such as ZnS and ZnSe, and the same effect as the present invention can be obtained.

[0010]

As described in detail above, according to the method for growing a heterostructure thin film of the present invention, a heterostructure thin film of good quality and having a steep hetero interface can be obtained without using any special method or means. It can be easily realized, and it becomes extremely easy to manufacture a high-performance device such as a superlattice device such as an HBT which requires a particularly steep hetero interface.

[Brief description of drawings]

FIG. 1 is a principle diagram of a raw material supply sequence in growing a heterostructure thin film of the present invention.

FIG. 2 is a raw material supply sequence diagram used for growing the heterostructure thin film of Example 1 of the present invention.

FIG. 3 is a schematic diagram showing a configuration of a GSMBE apparatus used for growing a heterostructure thin film of Example 1 of the present invention.

FIG. 4 is a sequence diagram of a raw material supply sequence used for growing a heterostructure thin film of Example 2 of the present invention.

5 is a raw material supply sequence diagram used for growing the heterostructure thin film of Example 3 of the present invention. FIG.

FIG. 6 is InGaAs / I grown in Example 1 of the present invention.
The figure which shows the Auger electron analysis result of a nP heterostructure thin film.

FIG. 7: InGaAs / I grown in Example 1 of the present invention
The figure which shows the 2 crystal X-ray-diffraction measurement result of a nP heterostructure thin film.

FIG. 8: InGaAs / I grown in Example 1 of the present invention
The figure which shows the photoluminescence measurement result in the liquid nitrogen temperature of the hetero thin film of nP quantum well structure.

FIG. 9 is a schematic diagram showing the configuration of a conventional GSMBE apparatus.

FIG. 10 is a diagram showing Auger electron analysis results of an InGaAs / InP heterostructure thin film grown by a conventional method.

FIG. 11 is a diagram showing a two-crystal X-ray diffraction measurement result of an InGaAs / InP heterostructure thin film grown by a conventional method.

FIG. 12 is a view showing a photoluminescence measurement result at a liquid nitrogen temperature of a hetero thin film having an InGaAs / InP quantum well structure grown by a conventional method.

[Explanation of symbols]

 1, 2, 20, 21 ... Cylinder 1a, 2a ... Valve 3 ... Cracking cell 3a, 4a, 5a ... Shutter 4, 5 ... Solid source molecular beam cell 6 ... InP substrate 7 ... Substrate shutter 8 ... Substrate heat source 9 ... Growth container 10 ... Solid In 11 ... Solid Ga 12 ... Arsine 13 ... Phosphine 22 ... Solid IIIa 23 ... Solid IIIb 24 ... Substrate 25 ... Va group raw material 26 ... Vb group raw material

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hiromi Sato, 1-280, Higashi Koikeku, Kokubunji, Tokyo 1-280, Central Research Laboratory, Hitachi, Ltd. (72) Kiyoshi Ouchi 1-280, Higashi Koikeku, Kokubunji, Tokyo Hitachi, Ltd. Central Research Laboratory

Claims (10)

[Claims] 1. A desired heterostructure is introduced on a substrate held in a vacuum atmosphere by introducing a raw material gas containing a desired thin film constituent or a thin film constituent via a raw material supply cell and performing a gas phase reaction. A method for forming a thin film, comprising two or more different semiconductor thin films selected from a II-VI group semiconductor thin film and / or a III-V group semiconductor thin film of the periodic table of elements or both semiconductor thin films. In the method for growing a heterostructure thin film, the step of growing a first semiconductor thin film on the substrate, and then depositing one or more molecular layers of a group V element or a group VI element constituting the first semiconductor thin film; A second step of forming the heterostructure thin film after at least one step of interrupting the introduction of all the thin film constituents or the raw material gas containing the thin film constituents for a predetermined time. A method for growing a heterostructure thin film, comprising at least a step of introducing a constituent component of a semiconductor thin film or a source gas containing the constituent component onto the substrate to form a film. 2. The method according to claim 1, wherein the introduction of all the constituents of the thin film or the raw material gas containing the constituents of the thin film to the substrate is interrupted for a predetermined period of time by the group V element or the group VI element deposited on the substrate. A method for growing a heterostructure thin film, characterized in that it is a desorption time from the substrate required for the surface coating layer of the element to become one molecular layer. 3. The method for growing a heterostructure thin film according to claim 1 or 2, after the introduction of all the constituent components of the thin film or the source gas containing the constituent components into the substrate is interrupted for a predetermined time, A group III component or a group II component which is a constituent component of the second semiconductor thin film forming the heterostructure thin film,
Alternatively, a predetermined amount of a source gas containing a group III component or a group II component may be introduced onto the substrate, and then the constituent component of the second semiconductor thin film or the source gas containing the constituent component may be introduced onto the substrate. Characteristic heterostructure thin film growth method. 4. A group III component or a group II component as a constituent component of a second semiconductor thin film forming a heterostructure thin film according to any one of claims 1 to 3, or III.
The introduction amount of the source gas containing the group III component or the group II component onto the substrate is such that the group III element or the group II element is 1 above the substrate.
A method for growing a heterostructure thin film, characterized in that the amount is an integral multiple of the amount required to form a molecular layer. 5. The heterostructure thin film according to claim 1, wherein the growing heterostructure thin film is a base and an emitter or a collector and a base in a heterobipolar transistor. Method for growing structural thin film. 6. The thin film constituent according to any one of claims 1 to 5, or the raw material gas containing the constituent is selected from the group II, III, IV, V and VI elements. A method for growing a heterostructure thin film, characterized in that the source gas contains at least two or more elements. 7. The method for growing a heterostructure thin film according to claim 1, wherein the constituent components of the thin film or the source gas containing the constituent components are arsine and phosphine. 8. The semiconductor thin film according to claim 1, wherein the two or more different semiconductor thin films constituting the heterostructure thin film are InP, InGaAs, GaAs, InG.
aP, GaSb, InGaAsP, InAs, GaP,
A heterostructure thin film growth method comprising a combination of two or more selected from ZnS, ZnSSe, ZnSe, and ZnCdSe. 9. A predetermined substrate is provided in a thin film growth container held in a vacuum atmosphere, and heating means for heating and controlling the substrate to an arbitrary temperature, and a desired thin film at a position facing the substrate. In a growth apparatus for a terror structure thin film, each raw material supply cell for introducing a raw material gas containing a constituent or a constituent of a thin film is provided, and at least one shutter dedicated to each cell is provided in the raw material supply cell. Between the substrate and the raw material supply cell, the constituent components of the thin film to be introduced onto the substrate from each of the cells, or a part or all of the raw material gas containing the constituent component of the thin film can be freely set for any time. An apparatus for growing a heterostructure thin film, characterized in that at least one shutter having a structure capable of blocking is provided. 10. The thin film constituent introduced from each cell onto the substrate between the substrate and the raw material supply cell according to claim 9, or part or all of the raw material gas containing the thin film constituent. And a means for growing a thin film on the basis of the method for growing a heterostructure thin film according to any one of claims 1 to 8, using a shutter having a structure capable of shutting off for any set time. Characteristic heterostructure thin film growth device.