JPH0777282B2 - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPH0777282B2 JPH0777282B2 JP2255193A JP2255193A JPH0777282B2 JP H0777282 B2 JPH0777282 B2 JP H0777282B2 JP 2255193 A JP2255193 A JP 2255193A JP 2255193 A JP2255193 A JP 2255193A JP H0777282 B2 JPH0777282 B2 JP H0777282B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- barrier
- semiconductor laser
- type
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 230000004888 barrier function Effects 0.000 claims description 43
- 238000005253 cladding Methods 0.000 claims description 9
- 230000002265 prevention Effects 0.000 claims description 4
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体レーザに関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser.
【０００２】[0002]
【従来の技術】半導体レーザのキャリアのうちで電子は
ｎ側のクラッド層から注入されるが、一部の電子は活性
層において発光再結合せずｐ側のクラッド層へ漏れ発振
特性を劣化させることが知られている。この電子の閉じ
込めを向上させることで、キャリアロスが減少し、動作
電流の低減、温度特性の改善、可視光レーザ等の短波長
化の効果が得られる。このような半導体レーザの例が電
子情報通信学会論文誌Ｃ−Ｉ、１９９１年、Ｊ７４−Ｃ
−Ｉ巻、１２号、５２７−５３５ページに報告されてい
る。この半導体レーザでは、活性層とｐ形クラッド層の
間にＡｌＧａＩｎＰ（ｘ＝０．７）層とＡｌＧａＩｎＰ
（ｘ＝０．２）層を４−６分子層の層厚で１０周期積層
した構造よりなる障壁層を設けている。2. Description of the Related Art Among the carriers of a semiconductor laser, electrons are injected from an n-side cladding layer, but some of the electrons leak to the p-side cladding layer without radiative recombination in the active layer and deteriorate oscillation characteristics. It is known. By improving the electron confinement, carrier loss is reduced, and the effects of reducing the operating current, improving the temperature characteristics, and shortening the wavelength of the visible light laser and the like can be obtained. An example of such a semiconductor laser is the IEICE Transactions CI, 1991, J74-C.
-Vol. I, No. 12, pp. 527-535. In this semiconductor laser, an AlGaInP (x = 0.7) layer and an AlGaInP layer are provided between the active layer and the p-type cladding layer.
A barrier layer having a structure in which (x = 0.2) layers are stacked for 10 periods with a layer thickness of 4-6 molecular layers is provided.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
障壁層は活性層とｐ形クラッド層の間にあり、その障壁
層を構成する２つの半導体層の価電子帯エネルギー位置
が一致していないから、ホールに対しても障壁作用また
はトラップ作用をする。そこで、そのような障壁層を有
する半導体レーザではホール注入の低下により、素子抵
抗の増大、高速変調時のキャリア注入遅れ等の問題が生
じる恐れがある。However, the conventional barrier layer is located between the active layer and the p-type cladding layer, and the valence band energy positions of the two semiconductor layers constituting the barrier layer do not match. , Also acts as a barrier or trap for holes. Therefore, in a semiconductor laser having such a barrier layer, the decrease in hole injection may cause problems such as an increase in device resistance and carrier injection delay during high-speed modulation.
【０００４】本発明は、以上述べた様な従来の事情に鑑
みてなされたもので、障壁層の価電子帯ポテンシャルを
平坦にすることにより、電子に対する障壁作用を有し、
しかもホールに対しては障壁作用またはトラップ作用を
もたないようにし、ひいては素子抵抗の増大、高速変調
時のキャリア注入遅れ等のホール注入の低下による問題
を生じない半導体レーザの提供を目的とする。The present invention has been made in view of the conventional circumstances as described above, and has a barrier action for electrons by flattening the valence band potential of the barrier layer,
Moreover, it is an object of the present invention to provide a semiconductor laser that does not have a barrier action or a trap action with respect to holes, and that does not cause a problem due to a decrease in hole injection such as an increase in device resistance and a carrier injection delay during high-speed modulation. .
【０００５】[0005]
【課題を解決するための手段】本発明の半導体レーザ
は、発光層の禁制帯幅より大きい禁制帯幅を有するｎ形
及びｐ形クラッド層で前記発光層を挟んだ構造を有し、
前記ｎ形クラッド層中に、伝導帯エネルギー位置を互い
に異にし、かつ、電子のドブロイ波長程度以下の層厚の
２つの半導体層を交互に１周期以上積層した構造からな
る障壁層をもつ半導体レーザにおいて、前記障壁層を構
成する２つの半導体層の価電子帯エネルギー位置が一致
していることを特徴としている。A semiconductor laser according to the present invention has a structure in which the light emitting layer is sandwiched by n-type and p-type cladding layers having a forbidden band width larger than the forbidden band width of the light emitting layer,
A semiconductor laser having a barrier layer in the n-type cladding layer, which has a structure in which two semiconductor layers having conduction band energy positions different from each other and having a layer thickness equal to or less than the de Broglie wavelength of electrons are alternately laminated for one cycle or more. In, the valence band energy positions of the two semiconductor layers forming the barrier layer are the same.
【０００６】[0006]
【作用】電子に対して伝導帯のエネルギー位置の異なる
半導体層を交互に積層した場合、その層厚が電子波の波
長付近になると、各界面で反射された電子波が干渉し強
め合うことにより電子の入射に対して仮想的な障壁を形
成する。具体的には、次式を満たすように層厚を決め
る。[Function] When semiconductor layers having different conduction band energy positions with respect to electrons are alternately laminated, when the layer thickness becomes close to the wavelength of the electron wave, the electron waves reflected at each interface interfere and strengthen each other. It forms a virtual barrier against the incidence of electrons. Specifically, the layer thickness is determined so as to satisfy the following equation.
【０００７】[0007]
【数１】 [Equation 1]
【０００８】式（１），（２）において、ｍ* W 、ｍ*
B はそれぞれ井戸層、バリア層の電子の有効質量、
ＬW ，ＬB はそれぞれ井戸層、バリア層の層厚、Ｅは電
子のエネルギー、△Ｅは井戸層とバリア層の伝導帯のエ
ネルギー位置の差である。In equations (1) and (2), m * W and m *
B is the effective mass of electrons in the well layer and the barrier layer,
L W and L B are the thicknesses of the well layer and the barrier layer, E is the electron energy, and ΔE is the difference in the energy position of the conduction band between the well layer and the barrier layer.
【０００９】このような障壁層は伝導帯にエネルギー差
を設けた結果、価電子帯にも同様のエネルギー差を生じ
ホールの注入に障害となる。本発明の半導体レーザの障
壁層では、価電子帯エネルギー位置を変えずに禁制帯幅
のみを変えた井戸層とバリア層を用いることで、ホール
に対しては価電子帯にエネルギー差がないために障壁と
ならず、電子に対しては伝導帯にエネルギー差を有する
ために障壁として作用する。As a result of providing an energy difference in the conduction band in such a barrier layer, a similar energy difference occurs in the valence band, which hinders the injection of holes. In the barrier layer of the semiconductor laser of the present invention, by using the well layer and the barrier layer in which only the forbidden band width is changed without changing the valence band energy position, there is no energy difference in the valence band for holes. Does not act as a barrier, and acts as a barrier to electrons due to the energy difference in the conduction band.
【００１０】[0010]
【実施例】以下、図面を参照して本発明の実施例を説明
する。Embodiments of the present invention will be described below with reference to the drawings.
【００１１】図１は本発明の一実施例の半導体レーザを
説明するためのエネルギーバンドの模式図である。発光
層１１は禁制帯幅０．９５ｅＶで、ＩｎＰに格子整合し
た組成のＩｎＧａＡｓＰ（厚さ０．１５μｍ）からな
り、波長１．３μｍで発振する。発光層１１へ注入され
るキャリアのうち、電子は、ｎ形電極、ｎ形ＩｎＰ基板
を通して、ｎ形ＩｎＰクラッド層１０から注入される。
また、ホールは、ｐ形電極、ｐ形ＩｎＰクラッド層１
６、障壁層１５を通じて発光層１１へ注入される。障壁
層１５はトンネル防止層１２と電子反射層とから構成さ
れている。トンネル防止層１２は、ＩｎＰに格子整合し
た組成のＩｎＡｌＡｓ（２０ｎｍ）からなる。電子反射
層は、ＩｎＰに格子整合した組成で、かつ、禁制帯幅
１．０５ｅＶのＩｎＧａＡｓＰ（厚さ１．４ｎｍ）から
なる井戸層１３、及びＩｎＰに格子整合した組成のＩｎ
ＡｌＡｓ（１．４ｎｍ）からなるバリア層１４を１０周
期交互に積層してなる。伝導帯での井戸層１３とバリア
層１４とのエネルギー差は３５０ｍｅＶあり、電子波の
界面での反射率も大きくとれるから、等価的な障壁高さ
は約７００ｍｅＶまで増大し、障壁層による電子の閉じ
込めがなされる。また、井戸層及びバリア層は価電子帯
においてはエネルギー差がない材料である。そのため、
ｐ形ＩｎＰクラッド層１６から注入されたホールは障壁
作用またはトラップ作用を受けず発光層１１に注入され
る。更に、価電子帯では発光層１１と障壁層１５に約５
０ｍｅＶのエネルギー差があり有効質量の大きいホール
は十分に発光層１１に閉じ込められる。以上の障壁層１
５の作用により、本実施例では、素子抵抗の増大、高速
変調時のキャリア注入遅れ等のホール注入の低下による
問題が生じず、高温動作特性と高速変調特性の改善が得
られる。FIG. 1 is a schematic diagram of energy bands for explaining a semiconductor laser according to an embodiment of the present invention. The light emitting layer 11 has a forbidden band width of 0.95 eV, is made of InGaAsP (thickness 0.15 μm) having a composition lattice-matched with InP, and oscillates at a wavelength of 1.3 μm. Of the carriers injected into the light emitting layer 11, electrons are injected from the n-type InP clad layer 10 through the n-type electrode and the n-type InP substrate.
Also, the holes are p-type electrodes and p-type InP clad layer 1
6 and is injected into the light emitting layer 11 through the barrier layer 15. The barrier layer 15 is composed of the tunnel prevention layer 12 and an electron reflection layer. The tunnel prevention layer 12 is made of InAlAs (20 nm) having a composition lattice-matched with InP. The electron reflection layer has a composition lattice-matched with InP and a well layer 13 made of InGaAsP (thickness 1.4 nm) having a band gap of 1.05 eV, and In having a composition lattice-matched with InP.
The barrier layers 14 made of AlAs (1.4 nm) are alternately laminated for 10 cycles. The energy difference between the well layer 13 and the barrier layer 14 in the conduction band is 350 meV, and the reflectance at the interface of electron waves can be large, so that the equivalent barrier height increases to about 700 meV, and the electron of the barrier layer increases. Confinement is made. The well layer and the barrier layer are materials having no energy difference in the valence band. for that reason,
The holes injected from the p-type InP cladding layer 16 are injected into the light emitting layer 11 without being affected by the barrier action or the trap action. Furthermore, in the valence band, the light emitting layer 11 and the barrier layer 15 have about 5
Holes having an energy difference of 0 meV and a large effective mass are sufficiently confined in the light emitting layer 11. Barrier layer 1 above
According to the function of 5, the present embodiment does not cause a problem due to a decrease in hole injection such as an increase in element resistance and carrier injection delay during high speed modulation, and high temperature operation characteristics and high speed modulation characteristics can be improved.
【００１２】本発明の半導体レーザは、障壁層１５で特
に急峻な界面を必要とするため急峻な界面の形成できる
ガスソースＭＢＥ法でエピタキシャル成長して作製す
る。まず、（１００）面を有するｎ形ＩｎＰ基板を９５
０℃で熱解離したホスフィンガスを照射しながら５００
℃に加熱し、Ｋセルを用いてＩｎとｎ形ドーパントのＳ
ｉを照射してｎ形ＩｎＰクラッド層１０を成長する。次
に、アルシンとホスフィンを同時に照射しながらＩｎと
Ｇａを照射し発光層１１を成長する。以後、同様に III
族元素であるＩｎ、Ｇａ、Ａｌ及びＶ族材料であるホス
フィン、アルシンを成長させる組成に従って照射するこ
とで半導体レーザのダブルヘテロ構造部分が形成され
る。電流の横方向閉じ込めには、埋め込み成長による閉
じ込め構造を用いることができる。Since the semiconductor laser of the present invention requires a particularly steep interface in the barrier layer 15, it is epitaxially grown by the gas source MBE method capable of forming a steep interface. First, an n-type InP substrate having a (100) plane is formed 95
While irradiating with phosphine gas thermally dissociated at 0 ° C, 500
After heating to ℃, using K cell, In and S of n-type dopant
The n-type InP clad layer 10 is grown by irradiating with i. Next, the light emitting layer 11 is grown by irradiating In and Ga while simultaneously irradiating arsine and phosphine. After that, similarly III
Irradiation according to a composition for growing group elements In, Ga, Al and group V materials phosphine and arsine forms a double heterostructure portion of the semiconductor laser. For lateral confinement of current, a confinement structure by buried growth can be used.
【００１３】上記実施例では発光層として１．３μｍで
発振するバルク層を用いたが、量子井戸形半導体レーザ
の場合には、本実施例の発光層１１に代えて、ＩｎＰに
格子整合した組成のＩｎＧａＡｓ層からなる厚さ５−１
０ｎｍの量子井戸活性層を配置すれば良い。In the above embodiment, a bulk layer that oscillates at 1.3 μm was used as the light emitting layer, but in the case of the quantum well type semiconductor laser, instead of the light emitting layer 11 of this embodiment, a composition lattice-matched to InP is used. 5-1 consisting of InGaAs layer
A 0 nm quantum well active layer may be arranged.
【００１４】上記実施例ではＩｎＰに格子整合した組成
の III−Ｖ族化合物半導体を用いたが、ＧａＡｓに格子
整合した III−Ｖ族化合物半導体からなる短波または可
視半導体レーザにも本発明は適用できる。Although a III-V group compound semiconductor having a composition lattice-matched to InP is used in the above-mentioned embodiment, the present invention is also applicable to a short-wave or visible semiconductor laser made of a III-V group compound semiconductor lattice-matched to GaAs. .
【００１５】上記実施例ではすべての層をＩｎＰに格子
整合したものを用いたが、必要なバンド構造を得るため
に格子整合条件を故意にはずした組成の III−Ｖ族化合
物半導体を用いても本発明は実施できる。Although all the layers are lattice-matched with InP in the above-described embodiment, a III-V group compound semiconductor having a composition in which the lattice-matching conditions are intentionally removed in order to obtain a necessary band structure may be used. The present invention can be implemented.
【００１６】[0016]
【発明の効果】以上に実施例を挙げて詳しく説明したよ
うに、本発明によれば、障壁層の価電子帯ポテンシャル
を平坦にすることにより、電子に対する障壁作用を維持
しながらホールに対して障壁またはトラップ作用をもた
ない構造を形成でき、ひいては素子抵抗の増大、高速変
調時のキャリア注入遅れ等のホール注入の低下による問
題を避けられ、優れた高温動作特性、高速変調特性をも
つ半導体レーザを得ることができる。As described above in detail with reference to the embodiments, according to the present invention, by flattening the valence band potential of the barrier layer, the barrier action for electrons is maintained while the barrier action for electrons is maintained. Semiconductors with excellent high-temperature operating characteristics and high-speed modulation characteristics that can form a structure that does not have a barrier or trap action, and can avoid problems such as increased element resistance and decreased hole injection such as carrier injection delay during high-speed modulation. A laser can be obtained.
【図１】本発明の半導体レーザの一実施例を説明するた
めのエネルギーバンドの模式図である。FIG. 1 is a schematic diagram of an energy band for explaining an example of a semiconductor laser of the present invention.
１０ ｎ形ＩｎＰクラッド層 １１ 発光層 １２ トンネル防止層 １３ 井戸層 １４ バリア層 １５ 障壁層 １６ ｐ形ＩｎＰクラッド層 10 n-type InP clad layer 11 light emitting layer 12 tunnel prevention layer 13 well layer 14 barrier layer 15 barrier layer 16 p-type InP clad layer
Claims (2)
有するｎ形及びｐ形クラッド層で前記発光層を挟んだ構
造を有し、前記ｎ形クラッド層中に、伝導帯エネルギー
位置を互いに異にし、かつ、電子のドブロイ波長程度以
下の層厚の２つの半導体層を交互に１周期以上層した構
造からなる障壁層をもつ半導体レーザにおいて、前記障
壁層を構成する２つの半導体層の価電子帯エネルギー位
置が一致していることを特徴とする半導体レーザ。1. A structure in which the light emitting layer is sandwiched by n-type and p-type clad layers having a forbidden band width larger than the forbidden band width of the light-emitting layer, and a conduction band energy position is provided in the n-type clad layer. In a semiconductor laser having a barrier layer having a structure in which two semiconductor layers different from each other and having a layer thickness equal to or less than a de Broglie wavelength of electrons are alternately layered for one cycle or more, the two semiconductor layers constituting the barrier layer are A semiconductor laser characterized in that the valence band energy positions are the same.
きい禁制帯幅を有するｎ形ＩｎＰクラッド層及びｐ形Ｉ
ｎＰクラッド層で前記発光層を挟んだ構造を有し、伝導
帯エネルギー位置を互いに異にし、かつ、電子のドブロ
イ波長程度以下の層厚の井戸層およびバリア層を交互に
１周期以上積層した構造の電子反射層を含む障壁層を前
記ｎ形クラッド層中にもつ半導体レーザにおいて、前記
井戸層をＩｎＧａＡｓＰで構成し、前記バリア層をＩｎ
ＡｌＡｓで構成するとともに、該井戸層およびバリア層
の価電子帯エネルギー位置を一致させ、前記障壁層には
前記発光層に隣接してＩｎＡｌＡｓトンネル防止層を有
していることを特徴とする半導体レーザ。2. An n-type InP clad layer and a p-type I having a band gap larger than the band gap of the InGaAsP light emitting layer.
A structure in which the light emitting layer is sandwiched between nP cladding layers, the conduction band energy positions are different from each other, and well layers and barrier layers having a layer thickness of about the de Broglie wavelength of electrons or less are alternately laminated for one cycle or more. In a semiconductor laser having a barrier layer including an electron reflection layer in the n-type cladding layer, the well layer is made of InGaAsP and the barrier layer is made of In.
A semiconductor laser which is made of AlAs and has the valence band energy positions of the well layer and the barrier layer aligned with each other, and the barrier layer having an InAlAs tunnel prevention layer adjacent to the light emitting layer. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2255193A JPH0777282B2 (en) | 1993-02-10 | 1993-02-10 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2255193A JPH0777282B2 (en) | 1993-02-10 | 1993-02-10 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06237040A JPH06237040A (en) | 1994-08-23 |
| JPH0777282B2 true JPH0777282B2 (en) | 1995-08-16 |
Family
ID=12085986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2255193A Expired - Fee Related JPH0777282B2 (en) | 1993-02-10 | 1993-02-10 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0777282B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7309482B2 (en) * | 2019-07-03 | 2023-07-18 | キヤノン株式会社 | Lens device and imaging device |
| CN115241736A (en) * | 2022-07-26 | 2022-10-25 | 江苏华兴激光科技有限公司 | GaAs-based high-reliability laser chip epitaxial wafer |
-
1993
- 1993-02-10 JP JP2255193A patent/JPH0777282B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06237040A (en) | 1994-08-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19960206 |
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| LAPS | Cancellation because of no payment of annual fees |