JPH0773107B2 - Method for manufacturing optical element substrate - Google Patents
Method for manufacturing optical element substrateInfo
- Publication number
- JPH0773107B2 JPH0773107B2 JP4311843A JP31184392A JPH0773107B2 JP H0773107 B2 JPH0773107 B2 JP H0773107B2 JP 4311843 A JP4311843 A JP 4311843A JP 31184392 A JP31184392 A JP 31184392A JP H0773107 B2 JPH0773107 B2 JP H0773107B2
- Authority
- JP
- Japan
- Prior art keywords
- optical element
- ausn
- micro
- substrate
- foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Punching Or Piercing (AREA)
- Mounting, Exchange, And Manufacturing Of Dies (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光通信用光モジュール
などに用いられる光素子を固定する基板の製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a substrate for fixing an optical element used in an optical module for optical communication.
【０００２】[0002]
【従来の技術】光通信は、半導体レーザ（ＬＤ）、発光
ダイオード（ＬＥＤ）、ファトダイオード（ＰＤ）、光
変調器を始めとして、光ファイバ、光スイッチ、光アイ
ソレータ、光導波路等の能動、受動素子の高性能、高機
能化により応用範囲が拡大さるつつある。近年、この応
用範囲の一つとして一般加入者系への適用が考えられて
おり、これに伴い、光素子を搭載したモジュールの低価
格化が要求されている。モジュール低価格化の有効な手
段として、複数個の微小接合バンプを介して光素子を無
調整で基板上に実装する無調整光実装が注目されてい
る。微小接合バンプを形成する方法は、微小ポンチとダ
イスとを用いてリボン状の接合金属箔を打ち抜き、基板
上に微小接合バンプを形成するもので、微小接合バンプ
として信頼性の高いＡｕＳｎバンプを用いたものが特開
平４−１５２６８２号公報、「アレイ状光素子用サブ基
板の作製方法」に詳細に記されている。2. Description of the Related Art Optical communications include semiconductor lasers (LDs), light emitting diodes (LEDs), photodiodes (PDs), optical modulators, active fibers such as optical fibers, optical switches, optical isolators, and optical waveguides. The range of applications is expanding due to higher performance and higher functionality of devices. In recent years, application to general subscriber systems has been considered as one of the application ranges, and along with this, there has been a demand for cost reduction of modules equipped with optical elements. As an effective means for reducing the cost of a module, unadjusted optical mounting, in which an optical element is mounted on a substrate without adjustment through a plurality of micro-junction bumps, has been attracting attention. A method of forming a micro-bonding bump is to punch a ribbon-shaped bonding metal foil using a micro-punch and a die to form a micro-bonding bump on a substrate. The details are described in Japanese Patent Application Laid-Open No. 4-152682, "Method for manufacturing sub-substrate for arrayed optical element".
【０００３】[0003]
【発明が解決しようとする課題】微小ポンチとダイスと
を用いてリボン状のＡｕＳｎ箔を打ち抜く場合、ＡｕＳ
ｎ材料が硬く脆いために、打ち抜き後の微小ＡｕＳｎバ
ンプにカケが生じ易い。このため、打ち抜きごとの微小
接合バンプの形状、重量が異なりバンプ高さが不均一と
なる。これにより、複数個の微小接合バンプを介して接
合された光素子は、傾き、接合不良などの欠陥を生じ、
実装歩留まりが低下するという大きな問題があった。When punching a ribbon-shaped AuSn foil by using a minute punch and a die, AuSn is used.
Since the n material is hard and brittle, chipping is likely to occur in the fine AuSn bump after punching. Therefore, the shape and weight of the micro-bonded bumps are different for each punching, and the bump heights are not uniform. As a result, the optical element bonded through the plurality of micro-bonded bumps has defects such as tilt and bonding failure,
There was a big problem that the mounting yield was lowered.
【０００４】[0004]
【課題を解決するための手段】本発明の光素子用基板の
製造方法は、微小ポインチとダイスとを用いてリボン状
の接合金属を打ち抜き、基板上に微小接合バンプを形成
する光素子用基板の製造方法において、リボン状の接合
金属を加熱しながら打ち抜くことを特徴とする。A method for manufacturing an optical element substrate according to the present invention is an optical element substrate in which a ribbon-shaped bonding metal is punched out using a minute poinch and a die to form a minute bonding bump on the substrate. In the manufacturing method described above, the ribbon-shaped joining metal is punched while being heated.
【０００５】[0005]
【作用】ＡｕＳｎ箔を加熱することにより、ＡｕＳｎ材
料は軟化する。これにより、打ち抜き後の微小ＡｕＳｎ
バンプにはカケが生じにくく、このため、形状、重量と
もに同等な微小接合バンプを再現性良く形成することが
できる。The AuSn material is softened by heating the AuSn foil. As a result, the minute AuSn after punching
Since the bumps are unlikely to be chipped, it is possible to reproducibly form minute bonding bumps having the same shape and weight.
【０００６】[0006]
【実施例】以下、本発明について、図面を参照して説明
する。図１は、本発明の第１の実施例を示す概要図であ
る。本構成では、まず、厚さ５０μｍのリボン状のＡｕ
Ｓｎ箔３を外径５０μｍの超鋼製微小ポンチ１と穴径６
０μｍのステンレス製ダイス２の間に挿入する（図１
（ａ））。次に、ＡｕＳｎ箔３を１８０℃程度に加熱し
ながら微小ポンチ１をＡｕＳｎ箔３に打付け、微小Ａｕ
Ｓｎバンプ６をＳｉ基板４上に直径６０μｍのＡｕパッ
ト５表面に打ち抜く（図１（ｂ））。加熱温度は、接合
金属の融点より１００℃程度低い温度に設定するのが適
当と考えるので、ＡｕＳｎの場合、融点２８０℃より１
００℃程度低い１８０ど程度に設定してある。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing a first embodiment of the present invention. In this configuration, first, a ribbon-shaped Au film with a thickness of 50 μm is used.
Sn foil 3 with micro steel punch 1 having an outer diameter of 50 μm and hole diameter 6
Inserted between 0 μm stainless steel dies 2 (Fig. 1
(A)). Next, the minute punch 1 is struck on the AuSn foil 3 while heating the AuSn foil 3 to about 180 ° C.
The Sn bump 6 is punched on the surface of the Au pad 5 having a diameter of 60 μm on the Si substrate 4 (FIG. 1B). Since it is considered appropriate to set the heating temperature to a temperature about 100 ° C. lower than the melting point of the joining metal, in the case of AuSn, the melting point is 280 ° C. or more.
The temperature is set to about 180 degrees, which is low at about 00 ° C.
【０００７】加熱温度の許容範囲は、接合金属の厚さよ
り異なるが設定温度に対して±５０℃程度が適当であ
る。また、加熱方法は、ダイス２を保持している支持台
にヒータが内蔵されており、ダイス２を伝達してＡｕＳ
ｎ箔３は加熱されている。このように、ＡｕＳｎ箔３は
加熱により軟化しているため、打ち抜き後の微小ＡｕＳ
ｎバンプ６にはカケが生じにくくなる。このため、形
状、質量ともに同等な微小接合バンプを再現良く形成す
ることができる。従って、打ち抜きごとの微小接合バン
プの高さは均一となり、複数個の微小ＡｕＳｎバンプを
介して接合された光素子の接合状態は良好で、実装歩留
まりが向上する。The allowable range of the heating temperature is different from the thickness of the joining metal, but it is suitable to be about ± 50 ° C. with respect to the set temperature. In addition, the heating method is that a heater is built in the support table that holds the die 2, and the AuS is transmitted by transmitting the die 2.
The n-foil 3 is heated. Thus, since the AuSn foil 3 is softened by heating, the minute AuS foil after punching
The n-bump 6 is less likely to be chipped. Therefore, minute bonding bumps having the same shape and mass can be formed with good reproducibility. Therefore, the heights of the micro-bonding bumps for each punching are uniform, the bonding state of the optical element bonded through the plurality of micro-AuSn bumps is good, and the mounting yield is improved.
【０００８】以上、本実施例では微小ポンチの数を１つ
としたが、これに限定されず、多数個の微小ポンチを用
いても良い。As described above, the number of the micro punches is one in the present embodiment, but the number is not limited to this, and a large number of micro punches may be used.
【０００９】また、本実施例ではＡｕＳｎ箔を加熱した
が、ＡｕＳｎ箔に接続した微小ポンチによる放熱を防ぐ
ために、微小ポンチも加熱しても良い。更に、打ち抜き
後の微小ＡｕＳｎバンプをＡｕパット表面に良好に付着
させるためにＡｕにパットを加熱しても良い。Although the AuSn foil is heated in this embodiment, the minute punch may also be heated in order to prevent heat radiation by the minute punch connected to the AuSn foil. Further, the pad may be heated on the Au in order to make the fine AuSn bumps after punching adhere well to the Au pad surface.
【００１０】また、本実施例では加熱する手段としてヒ
ータを用いたがこれに限定されず、例えばレーザ光、白
熱光、高周波等でも良い。Further, in the present embodiment, the heater is used as the heating means, but the heater is not limited to this. For example, laser light, incandescent light, high frequency, or the like may be used.
【００１１】また、接合金属材料としてＡｕＳｎを用い
たがこれに限定されず、例えば硬くて脆い材料であるＡ
ｕＳｉ等でも良い。Although AuSn is used as the joining metal material, the material is not limited to AuSn. For example, a hard and brittle material A
uSi or the like may be used.
【００１２】[0012]
【発明の効果】以上述べた通り、形状、重量ともに同等
な微小接合バンプを再現性良く形成することができるた
め、実装歩留まりを向上できる。As described above, since the minute bonding bumps having the same shape and weight can be formed with good reproducibility, the mounting yield can be improved.
【図１】本発明の第１の実施例を示す概略図である。FIG. 1 is a schematic diagram showing a first embodiment of the present invention.
１ 微小ポンチ ２ ダイス ３ ＡｕＳｎ箔 ４ シリコン基板 ５ Ａｕパット ６ 微小ＡｕＳｎバンプ 1 Micro punch 2 Dice 3 AuSn foil 4 Silicon substrate 5 Au pad 6 Micro AuSn bump
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｓ 3/18 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical indication H01S 3/18
Claims (1)
の接合金属を打ち抜き、基板上に微小接合バンプを形成
する光素子用基板の製造方法において、リボン状の接合
金属を加熱しながら打ち抜くことを特徴とする光素子用
基板の製造方法。1. A method for manufacturing a substrate for an optical element, in which a ribbon-shaped joining metal is punched out by using a fine punch and a die to form a fine joining bump on the substrate, and the ribbon-like joining metal is punched out while being heated. A method for manufacturing a substrate for an optical element, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4311843A JPH0773107B2 (en) | 1992-11-20 | 1992-11-20 | Method for manufacturing optical element substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4311843A JPH0773107B2 (en) | 1992-11-20 | 1992-11-20 | Method for manufacturing optical element substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06163554A JPH06163554A (en) | 1994-06-10 |
| JPH0773107B2 true JPH0773107B2 (en) | 1995-08-02 |
Family
ID=18022076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4311843A Expired - Lifetime JPH0773107B2 (en) | 1992-11-20 | 1992-11-20 | Method for manufacturing optical element substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0773107B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5299403B2 (en) | 2010-11-09 | 2013-09-25 | 株式会社デンソー | Drilling device and drilling method |
| CN103561882B (en) | 2011-05-26 | 2015-11-25 | 约翰逊控股公司 | Process for stamping and the parts prepared thus |
| CN102886422B (en) * | 2012-10-22 | 2015-02-25 | 安徽工业大学 | Punching method for improving flanging capability of sheet |
| WO2014097661A1 (en) * | 2012-12-22 | 2014-06-26 | 株式会社小松精機工作所 | Method for producing metal powder, and metal powder |
| JP6233137B2 (en) * | 2014-03-28 | 2017-11-22 | 日本電気株式会社 | Bump forming apparatus and method for manufacturing bumped component |
| CN105642765B (en) * | 2015-12-29 | 2018-03-16 | 哈尔滨工业大学 | A kind of titanium alloy plate hot piercing device and the method being punched out using the device |
-
1992
- 1992-11-20 JP JP4311843A patent/JPH0773107B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06163554A (en) | 1994-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5981945A (en) | Optoelectronic transducer formed of a semiconductor component and a lens system | |
| JP2877812B2 (en) | Optical coupling element and method of manufacturing the same | |
| JP2629435B2 (en) | Manufacturing method of sub-substrate for arrayed optical element | |
| EP0502670A2 (en) | Laser diode array | |
| JPH08204288A (en) | Optical semiconductor device | |
| JPH0560952A (en) | Optical semiconductor unit | |
| EP0439227B1 (en) | Semiconductor device comprising a support, method of manufacturing it, and method of manufacturing the support | |
| JPH0773107B2 (en) | Method for manufacturing optical element substrate | |
| US4793688A (en) | Photo electro device, method for manufacture of same, and lens support frame for use in such photo electro device | |
| Itoh et al. | Use of AuSn solder bumps in three-dimensional passive aligned packaging of LD/PD arrays on Si optical benches | |
| US5360761A (en) | Method of fabricating closely spaced dual diode lasers | |
| EP0961327B1 (en) | Photosemiconductor device mounted structure | |
| JP2527054B2 (en) | Optical module submount and manufacturing method thereof | |
| KR20050122200A (en) | Thin-film semiconductor component and production method for said component | |
| JPH06283536A (en) | Solder bump packaging substrate | |
| CN109683218B (en) | Optical element, optical module, and method for manufacturing the same | |
| JP5534155B2 (en) | Device and device manufacturing method | |
| JP2002111113A (en) | Optical module | |
| JPH0773108B2 (en) | Optical device substrate manufacturing equipment | |
| JPH0758149A (en) | Method for mounting chip part | |
| JPH07176546A (en) | Semiconductor device | |
| US20140097232A1 (en) | Bonding method and production method | |
| JPH06246479A (en) | Joined metallic sheet | |
| JPH10341040A (en) | Optical semiconductor module and fabrication thereof | |
| JPH07174941A (en) | Optical element coupling module for optical communication and its production |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19960123 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070802 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080802 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080802 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090802 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090802 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100802 Year of fee payment: 15 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110802 Year of fee payment: 16 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110802 Year of fee payment: 16 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120802 Year of fee payment: 17 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130802 Year of fee payment: 18 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130802 Year of fee payment: 18 |