JPH0762275A - Conductor paste for baked ceramic substrate - Google Patents
Conductor paste for baked ceramic substrateInfo
- Publication number
- JPH0762275A JPH0762275A JP21150193A JP21150193A JPH0762275A JP H0762275 A JPH0762275 A JP H0762275A JP 21150193 A JP21150193 A JP 21150193A JP 21150193 A JP21150193 A JP 21150193A JP H0762275 A JPH0762275 A JP H0762275A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- weight
- adhesive strength
- parts
- silver concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 239000004020 conductor Substances 0.000 title claims abstract description 23
- 239000000919 ceramic Substances 0.000 title claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 48
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052709 silver Inorganic materials 0.000 claims abstract description 20
- 239000004332 silver Substances 0.000 claims abstract description 20
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 18
- 239000010949 copper Substances 0.000 claims description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 abstract description 26
- 230000001070 adhesive effect Effects 0.000 abstract description 26
- 239000002245 particle Substances 0.000 abstract description 25
- 229910000679 solder Inorganic materials 0.000 abstract description 24
- 238000003878 thermal aging Methods 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052593 corundum Inorganic materials 0.000 abstract description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract 2
- 238000010304 firing Methods 0.000 description 12
- 239000002904 solvent Substances 0.000 description 11
- 239000011230 binding agent Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 230000032683 aging Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 3
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- YHPVLCAYDLBZOA-UHFFFAOYSA-N 1-decyl-2-ethylbenzene Chemical compound CCCCCCCCCCC1=CC=CC=C1CC YHPVLCAYDLBZOA-UHFFFAOYSA-N 0.000 description 1
- HZONRRHNQILCNO-UHFFFAOYSA-N 1-methyl-2h-pyridine Chemical compound CN1CC=CC=C1 HZONRRHNQILCNO-UHFFFAOYSA-N 0.000 description 1
- OAAZUWWNSYWWHG-UHFFFAOYSA-N 1-phenoxypropan-1-ol Chemical compound CCC(O)OC1=CC=CC=C1 OAAZUWWNSYWWHG-UHFFFAOYSA-N 0.000 description 1
- JCTXKRPTIMZBJT-UHFFFAOYSA-N 2,2,4-trimethylpentane-1,3-diol Chemical compound CC(C)C(O)C(C)(C)CO JCTXKRPTIMZBJT-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 1
- AWTGOJXYSBPDQS-UHFFFAOYSA-N [Mg].[Ar] Chemical compound [Mg].[Ar] AWTGOJXYSBPDQS-UHFFFAOYSA-N 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 229930007927 cymene Natural products 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- KWKXNDCHNDYVRT-UHFFFAOYSA-N dodecylbenzene Chemical compound CCCCCCCCCCCCC1=CC=CC=C1 KWKXNDCHNDYVRT-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- -1 isobutyl ester Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- HFPZCAJZSCWRBC-UHFFFAOYSA-N p-cymene Chemical compound CC(C)C1=CC=C(C)C=C1 HFPZCAJZSCWRBC-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 235000015096 spirit Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Paints Or Removers (AREA)
- Conductive Materials (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、導体ペーストに関し、
特にAl2 O3 を含有するセラミック焼成基板表面に印
刷、焼成される導体ペーストに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductor paste,
In particular, the present invention relates to a conductor paste which is printed and fired on the surface of a ceramic fired substrate containing Al 2 O 3 .
【0002】[0002]
【従来の技術】従来、導電性厚膜ペーストは、導電性金
属粉末およびガラスフリットを必要に応じて有機バイン
ダーおよび溶剤に分散されたものが公知であり、その導
電性金属粉末としては、銀、銀−パラジウム、銀−白
金、金、銅などが公知である。しかし、いずれの場合も
問題があった。導電粉末として銀を用いた場合は、回路
等のパターン間でマイグレーションを起こしやすい。銀
−パラジウムの場合には、ファインラインとして用いら
れるにはインピーダンスが高すぎる。銀−白金の場合
は、やはりマイグレーションに問題があり、金では、コ
ストがかかり過ぎる。銅を導体粉末として用いる場合に
は、焼成は不活性雰囲気中で行われる必要があるが、有
機ビヒクルを完全に焼成するための添加酸素量を厳密に
コントロールしてやらなければ、有機ビヒクルの焼き飛
び残りが生じたり、あるいは導体の酸化を引き起こした
りして所定の特性が得られない。2. Description of the Related Art Conventionally, a conductive thick film paste is known in which a conductive metal powder and a glass frit are dispersed in an organic binder and a solvent as necessary, and as the conductive metal powder, silver, Silver-palladium, silver-platinum, gold, copper and the like are known. However, there were problems in both cases. When silver is used as the conductive powder, migration easily occurs between patterns such as circuits. In the case of silver-palladium, the impedance is too high to be used as a fine line. In the case of silver-platinum, there is still a problem with migration, and gold is too costly. When copper is used as the conductor powder, it is necessary to perform firing in an inert atmosphere, but unless the amount of oxygen added for completely firing the organic vehicle is strictly controlled, the organic vehicle remains unburned. Occurs, or the conductor is oxidized, so that the predetermined characteristics cannot be obtained.
【0003】また、銅を導電粒子とするペーストにおい
ては、Al2 O3 を含有するセラミック基板との接着強
度、特に長期間の高温下の使用後において基板との接着
強度が低下するという問題点がある。接着強度を向上さ
せる手段としては、酸化銅、酸化第一銅、ビスマス酸化
物等を添加することが公知であるが、これらを添加する
ことにより、はんだ濡れ性の阻害、導電性の阻害等が生
じるという問題があり、所定の接着強度を得るために必
要な量を添加することが困難であった。Further, in the paste containing copper as the conductive particles, there is a problem that the adhesive strength with the ceramic substrate containing Al 2 O 3 , particularly the adhesive strength with the substrate after use under high temperature for a long time is lowered. There is. As a means for improving the adhesive strength, it is known to add copper oxide, cuprous oxide, bismuth oxide, etc., but by adding these, solder wettability inhibition, conductivity inhibition, etc. However, it is difficult to add the amount necessary to obtain a predetermined adhesive strength.
【0004】また、従来のAl2 O3 を90重量%以上
含有するセラミック焼成基板に対し、ガラス成分の多量
に含まれるセラミック焼成基板が用いられるようになっ
たが、この基板表面に印刷される導体ペーストにおい
て、そのペースト中に含まれるガラスが焼成過程で導体
表面に拡散し、その結果、導体の半田濡れを低下させ、
且つ接着強度、特にエージング後の接着強度を低下させ
てしまうため、基板としての信頼性が低下する問題があ
った。Further, a ceramic fired substrate containing a large amount of a glass component has come to be used in comparison with a conventional ceramic fired substrate containing 90% by weight or more of Al 2 O 3 , but it is printed on the surface of the substrate. In the conductor paste, the glass contained in the paste diffuses on the conductor surface during the firing process, and as a result, the solder wetting of the conductor is reduced,
Moreover, since the adhesive strength, particularly the adhesive strength after aging, is reduced, there is a problem that the reliability as a substrate is reduced.
【0005】[0005]
【発明が解決しようとする課題】本発明は、Al2 O3
を含有するセラミック焼成基板上に印刷された焼成膜の
接着強度、特に熱エージング後の接着強度が優れ、且つ
はんだ濡れ性、導電性にも優れたセラミック焼成基板用
導電ペーストを提供するものである。SUMMARY OF THE INVENTION The present invention is directed to Al 2 O 3
Provided is an electrically conductive paste for a ceramic fired substrate, which has excellent adhesive strength of a fired film printed on a ceramic fired substrate containing a metal, particularly excellent adhesive strength after thermal aging, and also has excellent solder wettability and electrical conductivity. .
【0006】[0006]
【課題を解決するための手段】本発明は、一般式Agx
Cu1-x (ただし、0.001≦x≦0.4、原子比)
で表され、且つ粒子表面の銀濃度が平均の銀濃度よりも
高く、粒子表面近傍で表面に向かって銀濃度が増加する
領域を有する銅合金粉末100重量部に対して、ガラス
フリット0.1〜30重量部、MnO2 粉末0.2〜2
重量部およびCr2 O3 粉末0.3〜3重量部を有機ビ
ヒクル中に分散してなることを特徴とする、Al2 O3
を含有するセラミック焼成基板用導体ペーストである。The present invention provides a general formula Ag x
Cu 1-x (however, 0.001 ≦ x ≦ 0.4, atomic ratio)
And the silver concentration on the grain surface is higher than the average silver concentration, and the glass frit is 0.1 parts by weight with respect to 100 parts by weight of the copper alloy powder having a region where the silver concentration increases toward the surface in the vicinity of the grain surface. ~ 30 parts by weight, MnO 2 powder 0.2-2
Parts by weight and 0.3 to 3 parts by weight of Cr 2 O 3 powder dispersed in an organic vehicle, Al 2 O 3
It is a conductor paste for a ceramic fired substrate containing.
【0007】以下に本発明を詳細に説明する。本発明で
用いられる銅合金粉末の作製は、米国特許第50111
40号明細書に記載の方法によるのが好ましい。開示内
容によれば、銀、銅の融液を高圧の不活性ガスによりア
トマイズして作製するのであり、特に不活性ガスとして
窒素ガス、ヘリウムガスを用いるのが好ましい。不活性
ガス中に含まれる酸素、水の量は、1%以下が好まし
く、さらに0.1%以下が好ましい。The present invention will be described in detail below. The preparation of the copper alloy powder used in the present invention is described in US Pat.
The method described in the specification No. 40 is preferable. According to the disclosure, it is prepared by atomizing a melt of silver and copper with a high-pressure inert gas, and it is particularly preferable to use nitrogen gas or helium gas as the inert gas. The amount of oxygen and water contained in the inert gas is preferably 1% or less, more preferably 0.1% or less.
【0008】本発明で用いられる銅合金粉末は、一般式
Agx Cu1-x (ただし、0.001≦x≦0.4、原
子比)で表されるが、xが0.001未満では十分なは
んだ濡れ性および接着強度が得られない。xが0.4を
越える場合には、電極間での銀のマイグレーションが問
題になる。好ましくは、0.02≦x≦0.35であ
る。 本発明で用いる銅合金粉末は表面の銀濃度が平均
の銀濃度より高いが、2.3倍以上であることが好まし
い。2.3倍未満では、粒子表面の銅濃度が高く、十分
なはんだ濡れ性および接着強度が得られず好ましくな
い。より好ましくは3倍以上80倍以下である。The copper alloy powder used in the present invention is represented by the general formula Ag x Cu 1-x (where 0.001≤x≤0.4, atomic ratio), but when x is less than 0.001 Sufficient solder wettability and adhesive strength cannot be obtained. If x exceeds 0.4, silver migration between the electrodes becomes a problem. Preferably, 0.02 ≦ x ≦ 0.35. The copper alloy powder used in the present invention has a surface silver concentration higher than the average silver concentration, but is preferably 2.3 times or more. If it is less than 2.3 times, the copper concentration on the particle surface is high, and sufficient solder wettability and adhesive strength cannot be obtained, which is not preferable. It is more preferably 3 times or more and 80 times or less.
【0009】また、粒子形状は球状が好ましいが、球状
より多少変形した粒子でも構わない。例えば、鱗片状、
樹枝状等が挙げられる。鱗片状粉末を使用する場合に
は、不活性ガスアトマイズ法で得られた球状粉末をボー
ルミル、スタンプミル等機械的に変形して用いるのが好
ましい。特に長径(粒子のもっとも長い径)と厚みとの
比が2以上である鱗片状粉末が好ましい。The shape of the particles is preferably spherical, but particles slightly deformed from the spherical shape may be used. For example, scaly,
Examples include dendritic shape. When the flaky powder is used, it is preferable to mechanically deform a spherical powder obtained by an inert gas atomizing method such as a ball mill or a stamp mill before use. In particular, flaky powder having a ratio of major axis (longest diameter of particles) to thickness of 2 or more is preferable.
【0010】本発明で用いる銅合金粉末の表面の銀濃
度、平均銀濃度は以下の方法で測定した値を用いた。表
面の銀濃度測定はXPS(X線光電子分光分析装置:K
RATOS社製、XSAM800)を用いた。 エッチング条件:10-7torr アルゴン 加速電圧2k
eV 5分間 測定条件:10-8torr アルゴン マグネシウムKα線
電圧12keV、電流10mA 測定、エッチングを5回繰り返し行い、最初の2回の測
定値の平均値を表面の銀濃度とした。すなわち、表面の
銀濃度をAg/(Ag+Cu)(原子比)、表面の銅濃
度をCu/(Ag+Cu)とした。For the silver concentration and average silver concentration on the surface of the copper alloy powder used in the present invention, the values measured by the following method were used. XPS (X-ray photoelectron spectroscopy analyzer: K
RATOS, XSAM800) was used. Etching condition: 10 -7 torr Argon Accelerating voltage 2k
eV 5 minutes Measurement conditions: 10 −8 torr Argon Magnesium Kα ray Voltage 12 keV, current 10 mA Measurement and etching were repeated 5 times, and the average value of the first 2 measured values was defined as the surface silver concentration. That is, the silver concentration on the surface was Ag / (Ag + Cu) (atomic ratio), and the copper concentration on the surface was Cu / (Ag + Cu).
【0011】平均の銀濃度は、導電粉末を濃硝酸溶液に
溶解後、ICP(高周派誘導結合型プラズマ発光分析
計、セイコー電子製、JY88P2)で行った。また、
本発明で用いられる銅合金粉末の平均粒径は0.1〜1
0μmが好ましい。平均粒径が0.1μm未満であると
ペースト中の分散が困難であり、10μmを越える場合
には焼結不足を起こしたり、印刷適性が悪く、沈降分離
しやすく好ましくない。より好ましくは、平均粒径が
0.2〜7μmである。また、存在する粒子の中15μ
m未満の粒子の含有率が90%以上であることが好まし
い。すなわち、15μm未満の粒子が90%未満である
場合、印刷ラインのかすれが起こったり、焼結不足とな
ることがあり好ましくない。The average silver concentration was determined by dissolving the conductive powder in a concentrated nitric acid solution and then using an ICP (high frequency inductively coupled plasma emission spectrometer, Seiko Denshi JY88P2). Also,
The average particle size of the copper alloy powder used in the present invention is 0.1 to 1
0 μm is preferable. When the average particle size is less than 0.1 μm, it is difficult to disperse in the paste, and when it exceeds 10 μm, insufficient sintering occurs, printability is poor, and sedimentation is likely to occur, which is not preferable. More preferably, the average particle size is 0.2 to 7 μm. Also, among the existing particles, 15μ
It is preferable that the content of particles having a particle size of less than m is 90% or more. That is, when the particle size of less than 15 μm is less than 90%, it is not preferable because the print line may be blurred or the sintering may be insufficient.
【0012】本発明で使用する銅合金粉末の平均粒子径
および粒子分布については、レーザー回折型粒径分布測
定装置(SALD1100:島津製作所製)を用いて、
銅合金粉末をエチレングリコール液中に0.01〜1g
/ccの濃度で超音波発振機を用いて分散させて測定し
た。測定値は体積基準の粒径分布を用いた。平均粒径は
体積換算基準で50%の値を用いた。Regarding the average particle size and particle distribution of the copper alloy powder used in the present invention, a laser diffraction type particle size distribution measuring device (SALD1100: manufactured by Shimadzu Corporation) was used.
0.01 to 1 g of copper alloy powder in ethylene glycol liquid
The measurement was performed by dispersing with an ultrasonic oscillator at a concentration of / cc. As the measured value, a particle size distribution based on volume was used. A value of 50% was used as the average particle size on a volume conversion basis.
【0013】導電粉末である銅合金粉末の含有酸素量は
接点での耐酸化性、導電性のために少ないことが好まし
く、2000ppm以下が好ましい。さらに好ましくは
1000ppm以下である。含有酸素量とは、粒子の表
面、内部すべてのトータルの含有量を言う。含有酸素量
は、かかる組成の銅合金粉末試料2gを酸素/窒素分析
計(EMGA650:堀場製作所製)で2000℃まで
昇温をかけて測定した。The oxygen content of the copper alloy powder, which is a conductive powder, is preferably small for the oxidation resistance and conductivity of the contacts, and is preferably 2000 ppm or less. More preferably, it is 1000 ppm or less. The oxygen content means the total content on the surface and inside of the particle. The oxygen content was measured by heating 2 g of a copper alloy powder sample having such a composition with an oxygen / nitrogen analyzer (EMGA650: manufactured by Horiba Ltd.) to 2000 ° C.
【0014】本発明においては、上記の銅合金粉末に対
して、MnO2 粉末とCr2 O3 粉末の所定量を併用す
ることが最も重要である。MnO2 粉末は、導体ペース
ト中のガラス成分およびセラミック焼成基板中のAl2
O3 と反応してはんだ濡れ性および高温エージング後の
接着強度を改善する効果を持つが、添加によりシート抵
抗を増大させる。また、CrO2 粉末は導体ペースト中
のガラス成分およびセラミック焼成基板中のAl2 O3
と反応してはんだ濡れ性を改善するが、高温エージング
後の接着強度を悪化させる。これらの理由から、各々単
独では、はんだ濡れ性、高温エージング後の接着強度お
よびシート抵抗の改善において所定の効果を得るために
必要となる量を添加することができなかった。しかし、
MnO2粉末とCr2 O3 粉末を併用することによっ
て、接着強度、はんだ濡れ性、シート抵抗共に優れた導
体ペーストが得られる。In the present invention, it is most important to use a predetermined amount of MnO 2 powder and Cr 2 O 3 powder together with the above copper alloy powder. The MnO 2 powder is composed of glass components in the conductor paste and Al 2 in the ceramic fired substrate.
It has the effect of reacting with O 3 to improve solder wettability and adhesive strength after high temperature aging, but its addition increases the sheet resistance. Further, CrO 2 powder is used as a glass component in the conductor paste and Al 2 O 3 in the ceramic fired substrate.
Reacts with to improve solder wettability but deteriorates the adhesive strength after high temperature aging. For these reasons, each alone cannot be added in an amount necessary to obtain a predetermined effect in improving solder wettability, adhesive strength after high temperature aging and sheet resistance. But,
By using the MnO 2 powder and the Cr 2 O 3 powder together, a conductor paste having excellent adhesive strength, solder wettability and sheet resistance can be obtained.
【0015】MnO2 粉末の配合割合は、銅合金粉末1
00重量部に対して0.2〜2重量部であることが必要
であり、好ましくは0.3〜1.5重量部である。0.
2重量部未満では高温エージング後の接着強度が極端に
悪化する。一方、2重量部を越えるとシート抵抗が増大
する。Cr2 O3 粉末の配合比率は、銅合金粉末100
重量部に対して0.3〜3重量部であることが必要であ
り、好ましくは1.5〜2.5重量部である。0.3重
量部未満では、はんだ濡れ性および高温エージング後の
接着強度が低く、特にはんだ濡れ性が極端に低下し、一
方、3重量部を越えるとはんだ濡れ性の低下、シート抵
抗の増大が生じる。The mixing ratio of MnO 2 powder is 1% of copper alloy powder.
It is necessary to be 0.2 to 2 parts by weight, preferably 0.3 to 1.5 parts by weight, relative to 00 parts by weight. 0.
If it is less than 2 parts by weight, the adhesive strength after high temperature aging is extremely deteriorated. On the other hand, if it exceeds 2 parts by weight, the sheet resistance increases. The compounding ratio of Cr 2 O 3 powder is 100% copper alloy powder.
It is necessary that the amount is 0.3 to 3 parts by weight, and preferably 1.5 to 2.5 parts by weight. If it is less than 0.3 parts by weight, the solder wettability and the adhesive strength after high temperature aging are low, and especially the solder wettability is extremely lowered, while if it exceeds 3 parts by weight, the solder wettability is lowered and the sheet resistance is increased. Occurs.
【0016】本発明で使用するMnO2 粉末およびCr
2 O3 粉末の平均粒径については、3μm以下のものが
好ましい。本発明で用いるガラスフリットは、所定の温
度で溶融し、金属粉末どうし、あるいは金属導電体と基
板とを強固に固着させるためのものである。本発明の導
体ペーストには、公知のガラスフリットが使用できる
が、600℃〜900℃で熱処理した時に再結晶化する
ものが好ましい。特に好ましくはB2 O3 −SiO2−
ZnO、B2 O3 −SiO2 −PbO、PbO−ZnO
−B2 O3 、PbO−B2 O3 を主成分としたものであ
る。再結晶化しないガラスフリットを使用した場合、導
体ペースト焼成後に抵抗体ペーストを印刷して再度焼成
を行なった際、該導体ペースト中のガラス成分が再溶融
して導体表面にしみ出し、はんだ濡れ性を悪化させるた
め好ましくない。MnO 2 powder and Cr used in the present invention
The average particle size of the 2 O 3 powder is preferably 3 μm or less. The glass frit used in the present invention is for melting at a predetermined temperature to firmly bond the metal powders or the metal conductor to the substrate. Known glass frits can be used for the conductor paste of the present invention, but those that recrystallize when heat-treated at 600 ° C. to 900 ° C. are preferable. Particularly preferably B 2 O 3 —SiO 2 —
ZnO, B 2 O 3 -SiO 2 -PbO, PbO-ZnO
The -B 2 O 3, PbO-B 2 O 3 is obtained by the main component. When a glass frit that does not recrystallize is used, when the resistor paste is printed after firing the conductor paste and firing is performed again, the glass component in the conductor paste remelts and exudes to the conductor surface, resulting in solder wettability. Is not preferable because it worsens.
【0017】ガラスフリットの粒径としては、十分な焼
結性を得るために、0.01〜30μm程度の平均粒径
のものが好ましく、0.1〜5μmがより好ましい。こ
こで記述される平均粒径は、前記のレーザー回折法で測
定した平均粒径を示す。ガラスフリットの使用量は、銅
合金粉末100重量部に対して0.1〜30重量部であ
るが、0.1重量部よりも少ない場合は基板との十分な
接着強度が得られず、30重量部を越える場合にははん
だ付け性が悪くなる。好ましいガラスフリットの使用量
は0.5〜20重量部である。The particle size of the glass frit is preferably 0.01 to 30 μm, more preferably 0.1 to 5 μm, in order to obtain sufficient sinterability. The average particle size described here indicates the average particle size measured by the laser diffraction method. The amount of the glass frit used is 0.1 to 30 parts by weight with respect to 100 parts by weight of the copper alloy powder, but if it is less than 0.1 parts by weight, sufficient adhesive strength with the substrate cannot be obtained. If it exceeds the weight part, the solderability becomes poor. The preferred amount of glass frit used is 0.5 to 20 parts by weight.
【0018】有機ビヒクルは、各粉末を分散させてペー
スト状にするものである。有機ビヒクルとは有機バイン
ダー及び/または溶剤からなるものである。有機バイン
ダーとしては、エチルセルロース、ヒドロキシエチルセ
ルロース、メチルセルロース、ニトロセルロース、エチ
ルセルロース誘導体、アクリル系樹脂、ブチラール樹
脂、アルキッドフェノール樹脂、エポキシ樹脂、木材ロ
ジンなどが挙げられる。アクリル系樹脂としては、たと
えばポリメタアクリル酸ブチルエステル、ポリメタアク
リル酸イソブチルエステル、低級アルコールのポリメタ
アクリレートを含むものが挙げられる。ブチラール樹脂
としては、ポリビニルブチラール樹脂が好ましい。有機
バインダーは、分解温度が500℃以下のものが好まし
い。分解温度の高いものを使用すると、焼成による有機
バインダーの分解が不十分になり、焼成膜のハンダ濡れ
性、導電性を阻害し、基盤との接着強度の低下をもたら
す。分解温度の測定は、熱天秤を用い、樹脂の重量が5
0%減量するときの温度を測定した。The organic vehicle is a paste in which each powder is dispersed. The organic vehicle is composed of an organic binder and / or a solvent. Examples of the organic binder include ethyl cellulose, hydroxyethyl cellulose, methyl cellulose, nitrocellulose, ethyl cellulose derivative, acrylic resin, butyral resin, alkyd phenol resin, epoxy resin and wood rosin. Examples of acrylic resins include those containing polymethacrylic acid butyl ester, polymethacrylic acid isobutyl ester, and lower alcohol polymethacrylate. As the butyral resin, a polyvinyl butyral resin is preferable. The organic binder preferably has a decomposition temperature of 500 ° C. or lower. If a material having a high decomposition temperature is used, the decomposition of the organic binder due to firing becomes insufficient, which hinders the solder wettability and conductivity of the fired film, resulting in a decrease in adhesive strength with the substrate. A thermobalance was used to measure the decomposition temperature, and the weight of the resin was 5
The temperature at the time of 0% weight loss was measured.
【0019】有機バインダーの使用量としては、導電性
金属混合粉末100重量部に対して5重量部以下が好ま
しく、より好ましくは1重量部以下であり、最も好まし
くは0.5重量部以下である。5重量部以上の有機バイ
ンダーの使用は、焼成による有機バインダーの分解が不
十分になり、焼成膜のハンダ濡れ性、導電性を阻害し、
基盤との接着強度の低下をもたらす。本発明で用いる場
合には、これらの樹脂を溶剤等へ分散させて用いること
が好ましく、公知の溶剤を用いることができる。しか
し、必ずしも樹脂を用いる必要はなく、適度の粘性、印
刷性が得られれば、溶剤のみを有機ビヒクルとして用い
て構わない。The amount of the organic binder used is preferably 5 parts by weight or less, more preferably 1 part by weight or less, and most preferably 0.5 part by weight or less with respect to 100 parts by weight of the conductive metal mixed powder. . The use of 5 parts by weight or more of the organic binder results in insufficient decomposition of the organic binder due to firing, impairs solder wettability and conductivity of the fired film,
This leads to a decrease in the adhesive strength with the substrate. When used in the present invention, these resins are preferably dispersed in a solvent or the like, and a known solvent can be used. However, it is not always necessary to use a resin, and only a solvent may be used as the organic vehicle as long as appropriate viscosity and printability are obtained.
【0020】溶剤としては公知の溶剤で構わないが、か
かる組成物の保存時に揮散が少なく、かつ適度の粘度を
与え、さらに印刷適性に優れた溶剤が好ましい。例え
ば、テルピネオールやブチルカルビトール、エチルカル
ビトール、メチルカルビトール、エチルセロソルブ、ブ
チルセロソルブ、フェノキシプロパノール等のエーテル
類、ブチルカルビトールアセテート、エチルカルビトー
ルアセテート、メチルカルビトールアセテート、エチル
セロソルブアセテート、ブチルセロソルブアセテート、
酢酸エチル、酢酸ブチル、ジブチルフタレート、2,
2,4−トリメチル1,3−ペンタンジオールジイソブ
チレート、2,2,4−トリメチル−1,3−ペンタン
ジオールモノイソブチレート等のエステル類、メチルエ
チルケトン、メチルイソブチルケトン等のケトン類、N
−メチルピリジン、ミネラルスピリット、トルエン、キ
シレン、シメン、エチルデシルベンゼン、ドデシルベン
ゼン等の炭化水素類およびこれらの溶剤の混合物が挙げ
られる。A known solvent may be used as the solvent, but a solvent which is less volatile during storage of the composition, gives an appropriate viscosity, and is excellent in printability is preferable. For example, terpineol or butyl carbitol, ethyl carbitol, methyl carbitol, ethyl cellosolve, butyl cellosolve, ethers such as phenoxypropanol, butyl carbitol acetate, ethyl carbitol acetate, methyl carbitol acetate, ethyl cellosolve acetate, butyl cellosolve acetate,
Ethyl acetate, butyl acetate, dibutyl phthalate, 2,
Esters such as 2,4-trimethyl 1,3-pentanediol diisobutyrate and 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate, ketones such as methyl ethyl ketone and methyl isobutyl ketone, N
-Methylpyridine, mineral spirits, hydrocarbons such as toluene, xylene, cymene, ethyldecylbenzene, dodecylbenzene and mixtures of these solvents.
【0021】溶剤の使用量としては、粘性及び印刷性を
損なわない程度であれば良く、例えば銅合金粉末100
重量部に対して1〜50重量部が好ましいが、より好ま
しくは2〜20重量部である。本発明において使用され
るAl2 O3 を含有するセラミック焼成基板は、Al 2
O3 を単独成分、あるいはガラス成分中の一成分として
含むものである。Al 2 O3 成分の含有量としては、ペ
ースト自身の焼成温度に適する耐熱性を基板が有し、基
板とペースト焼成膜との間に良好な密着力を保持し、か
つ焼成膜のはんだ濡れ性を良好に保ためには、全体の3
0重量%以上が好ましい。。The amount of the solvent used should be viscosity and printability.
It does not matter as long as it does not damage, for example, copper alloy powder 100
1 to 50 parts by weight is preferable, but more preferable.
It is preferably 2 to 20 parts by weight. Used in the present invention
Al2O3The fired ceramic substrate containing Al is Al 2
O3As a single component or as a component in the glass component
It includes. Al 2O3As for the content of ingredients,
The substrate has heat resistance suitable for the firing temperature of the
Keep good adhesion between the plate and the paste firing film,
In order to keep the solder wettability of the fired film good,
It is preferably 0% by weight or more. .
【0022】[0022]
【実施例】本発明の組成物の特性は、抵抗率、ハンダぬ
れ性、接着強度について測定した。抵抗率は4端子試験
法を用いて、0.5mm×35mmの導電体を作成して
その両端の抵抗値を測定して求めた。EXAMPLES The properties of the composition of the present invention were measured in terms of resistivity, solder wettability and adhesive strength. The resistivity was determined by making a conductor of 0.5 mm × 35 mm and measuring the resistance value at both ends of the conductor using the 4-terminal test method.
【0023】接着強度の測定は、基板上に2mm×2m
mに焼成した厚さ20μmの膜にマイルド活性フラック
スをつけ、230℃のPb/Sn/Ag共晶ハンダ浴中
5秒間浸漬して、直径0.8mmのSnメッキ銅線をハ
ンダ付けし、インストロン型引っ張り試験機を用いてピ
ール強度を測定した。接着強度測定は、焼成直後、高温
放置後について行った。高温放置は導線をハンダ付けし
た焼成膜をオーブンによって空気中で150℃、100
時間保つことによって行った。The adhesive strength is measured on the substrate by 2 mm × 2 m.
A mild active flux is applied to a 20 μm thick film that has been baked to m, and it is immersed in a Pb / Sn / Ag eutectic solder bath at 230 ° C. for 5 seconds, and a Sn-plated copper wire with a diameter of 0.8 mm is soldered. The peel strength was measured using a Ron type tensile tester. The adhesive strength was measured immediately after firing and after standing at high temperature. When left at a high temperature, the fired film with the lead wire soldered is put in an oven at 150 ° C for 100 ° C in the air.
Went by keeping time.
【0024】ハンダ濡れ性は20mm×20mmの焼成
膜を作製後、膜にマイルド活性フラックスをつけ、23
0℃のPb/Sn共晶ハンダ浴中に10秒間浸漬した
後、ハンダによる濡れ面積を測定した。このはんだ濡れ
は、少なくとも90%以上であることが好ましことから
90%以上を良、未満を不良と判定した。The solder wettability was 20 mm × 20 mm.
After immersing in a Pb / Sn eutectic solder bath at 0 ° C. for 10 seconds, the wetted area by solder was measured. The solder wetting is preferably at least 90% or more, and therefore 90% or more was judged to be good, and less than 90% was judged to be bad.
【0025】[0025]
【実施例1〜7および比較例1〜4】導電粉末として
は、表1に示したものを使用した。ガラスフリットは、
主成分がPbO−ZnO−B2 O3 で、平均粒径2.9
μm、再結晶化温度570℃の物を使用した。有機バイ
ンダーはエチルセルロースN−100(ハーキュレス
製)を2,2,4−トリメチル−1,3−ペンタンジオ
ールモノイソブチレートに8%溶液になるように溶かし
たものを使用した。Examples 1 to 7 and Comparative Examples 1 to 4 As the conductive powder, those shown in Table 1 were used. Glass frit
Main component in PbO-ZnO-B 2 O 3 , average particle size 2.9
A material having a recrystallization temperature of 570 ° C. was used. The organic binder used was a solution of ethyl cellulose N-100 (manufactured by Hercules) dissolved in 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate so as to form an 8% solution.
【0026】導電粉末、ガラスフリットを表2に記載の
割合で配合し、次いで、MnO2 および/またはCr2
O3 粉末を表2に記載されている割合で加え、更に有機
ビヒクルを有機バインダーが銅合金粉末100重量部に
対して0.3重量部になるように加え、更に必要に応じ
て溶剤を加えた後、3本ロールミルで十分混練しておの
おののペーストを作製した。The conductive powder and the glass frit were mixed in the proportions shown in Table 2, and then MnO 2 and / or Cr 2 were added.
O 3 powder was added in the ratio shown in Table 2, and an organic vehicle was added so that the organic binder was 0.3 parts by weight with respect to 100 parts by weight of the copper alloy powder, and a solvent was further added if necessary. After that, each was sufficiently kneaded with a three-roll mill to prepare each paste.
【0027】セラミック焼成基板としては、その成分が
Al2 O3 −ZnO2 −B2 O3 −SiO2 −CaOお
よびAl2 O3 −ZnO2 −B2 O3 −SiO2 −Pb
Oからなるものを使用した。Al2 O3 の含有量は52
重量%であった。各実施例および比較例のペーストは、
300メッシュのステンレス製スクリーンを用いて、セ
ラミック焼成基板表面にスクリーン印刷を行った。The components of the ceramic fired substrate are Al 2 O 3 --ZnO 2 --B 2 O 3 --SiO 2 --CaO and Al 2 O 3 --ZnO 2 --B 2 O 3 --SiO 2 --Pb.
The one consisting of O was used. The content of Al 2 O 3 is 52
% By weight. The paste of each Example and Comparative Example,
Screen printing was performed on the surface of the ceramic fired substrate using a 300-mesh stainless screen.
【0028】焼成はワトキンスジョンソン社製ベルトコ
ンベア炉を用いて、ピーク温度650℃10分間、全焼
成時間1時間で窒素雰囲気中で行った。昇温時、440
℃までのゾーンには、100ppmになるように酸素を
ドープした。焼成した厚膜の性能評価結果を表2に示し
た。The firing was carried out in a nitrogen atmosphere with a peak temperature of 650 ° C. for 10 minutes and a total firing time of 1 hour using a belt conveyor furnace manufactured by Watkins Johnson. During temperature increase 440
The zone up to ° C was doped with oxygen to 100 ppm. Table 2 shows the performance evaluation results of the baked thick film.
【0029】[0029]
【表1】 [Table 1]
【0030】[0030]
【表2】 [Table 2]
【0031】[0031]
【発明の効果】本発明は、焼成された焼成膜のはんだ濡
れ性および接着強度、特に熱エージング後の接着強度が
格段に優れ、かつ抵抗率の低い、Al2 O3 を含有する
セラミック焼成基板用導体ペーストを提供することを可
能にするものであり、大いに有用である。INDUSTRIAL APPLICABILITY The present invention provides a ceramic fired substrate containing Al 2 O 3, which has remarkably excellent solder wettability and adhesive strength of a fired fired film, particularly adhesive strength after thermal aging and has low resistivity. It is possible to provide a conductor paste for use, which is very useful.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01B 1/16 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display area H01B 1/16
Claims (1)
01≦x≦0.4、原子比)で表され、且つ粒子表面の
銀濃度が平均の銀濃度よりも高く、粒子表面近傍で表面
に向かって銀濃度が増加する領域を有する銅合金粉末1
00重量部に対して、ガラスフリット0.1〜30重量
部、MnO2 粉末0.2〜2重量部およびCr2 O3 粉
末0.3〜3重量部を有機ビヒクル中に分散してなるこ
とを特徴とする、Al2 O3 を含有するセラミック焼成
基板用導体ペースト。1. The general formula Ag x Cu 1-x (provided that 0.0
01 ≦ x ≦ 0.4, atomic ratio), the silver concentration on the grain surface is higher than the average silver concentration, and the copper alloy powder 1 has a region near the grain surface where the silver concentration increases toward the surface.
0.1 to 30 parts by weight of glass frit, 0.2 to 2 parts by weight of MnO 2 powder and 0.3 to 3 parts by weight of Cr 2 O 3 powder, dispersed in an organic vehicle, relative to 00 parts by weight. A conductor paste for a ceramic fired substrate, containing Al 2 O 3 .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21150193A JPH0762275A (en) | 1993-08-26 | 1993-08-26 | Conductor paste for baked ceramic substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21150193A JPH0762275A (en) | 1993-08-26 | 1993-08-26 | Conductor paste for baked ceramic substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0762275A true JPH0762275A (en) | 1995-03-07 |
Family
ID=16606990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21150193A Withdrawn JPH0762275A (en) | 1993-08-26 | 1993-08-26 | Conductor paste for baked ceramic substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0762275A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003023790A1 (en) * | 2001-09-06 | 2003-03-20 | Noritake Co.,Limited | Conductor composition and method for production thereof |
US6826031B2 (en) | 2001-09-06 | 2004-11-30 | Noritake Co., Limited | Ceramic electronic component and production method therefor |
-
1993
- 1993-08-26 JP JP21150193A patent/JPH0762275A/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003023790A1 (en) * | 2001-09-06 | 2003-03-20 | Noritake Co.,Limited | Conductor composition and method for production thereof |
US6826031B2 (en) | 2001-09-06 | 2004-11-30 | Noritake Co., Limited | Ceramic electronic component and production method therefor |
CN1316509C (en) * | 2001-09-06 | 2007-05-16 | 诺利塔克股份有限公司 | Conductor composition and method for production thereof |
KR100866220B1 (en) * | 2001-09-06 | 2008-10-30 | 가부시키가이샤 노리타케 캄파니 리미티드 | Conductor composition and method for production thereof |
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