JPH07507600A - Layer deposition method and apparatus - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] Layer deposition method and apparatus The present invention relates to the method described in the preamble of claim 1, and the premise of claim 23. The coating device according to the section and the coating apparatus according to claims 22 to 39 The invention relates to the use of the method or device described above.

Especially hard material layers, such as carbides and nitrides of titanium and other metals of group IVb. It is known to deposit layers of materials by ion blasting. Of course , the workpiece to be coated during the ion blating process is approximately 30 Subject to relatively strong temperature loads exceeding 0°C. For a long time, hardness of the kind mentioned above of a method that allows material layers to be deposited at low temperatures using reactive processes. Development is being attempted. In principle, this can be done by cathode sputtering. Deposition is provided. However, until now, cathodes at temperatures lower than 300°C The above-mentioned layers can be produced by sputtering to meet the usual requirements of the layer, especially its wear resistance. No success has been achieved in depositing materials that meet these requirements.

For this purpose, for example, so-called hybrid methods are known, in which A part of the body is disclosed in EP-A-0306612 and EP-A-0 of the same applicant. As is known from publication no. 432090, in addition to cathode sputtering Evaporated within the arc discharge. However, the power density required in that case is , it is impossible to reach the desired low temperature level below 300°C without cooling the workpiece. Can not. Furthermore, this hybrid method is technically relatively complex, so It is often not profitable to use it in the case of coating high-temperature parts.

Furthermore, for this purpose a cathode sputtering source with an open magnetic field configuration, so-called A loose ``unbalanced magnetron'' is used. An important flaw in this process is One point that must be taken into account is that the output yield is small. Approximately 1O% of input output It is only used for sputtering. The remaining 90% is not used, but From there, we will shift to cooling water to take advantage of the cost. A device with an open magnetic field structure In this case, more than half of the plasma energy is not in the sputtering of the solid but in the vicinity of the workpiece. It is used to generate plasma in the surrounding area, which also poses thermal problems.

Therefore, this method is currently not used at all for reactive coatings at low temperatures. do not have.

Additionally, various auxiliary ionization devices can be combined with cathode sputtering methods. is known. From DE-A-3503397, the deposition of a hard material layer For solid state magnetic field assisted cathode sputtering sources, the so-called magnetro sputtering using a magnetron, in which case the workpiece is placed in the area of the magnetron. In contrast, it is known to install an electron gun at the rear. work and magnetro An anode bar is provided in the area between the electron guns. electrons brought by the magnetron into the region of the magnetron plasma discharge. Thereby The plasma density in this region increases.

According to DE-A-3503398, a first electric current is connected between the workpiece and the magnetron. A pole is provided and a second electrode is provided on the other side of the workpiece. In that case the second The electrodes are used to increase the plasma density in the region of the magnetron-plasma discharge. , used as an electron radiator In the above two methods, the workpiece is heated considerably, so If the workpiece or its cross section is exposed to a cathode sputtering source or magnetron sputtering source, It cannot be used if it is small compared to the puttering surface. Regarding this, DE- It is also described in A-4011515.

The last-mentioned limitations do not allow this type of device to be used economically. So This further makes the resulting coating dependent on the loading of the workpiece into the equipment. , it is common to use this type of method as a lawn coating. It cannot be used to improve other workpieces.

According to DE-A-4011515, a pair of electrodes is provided between the workpiece and the magnetron. is provided with an electrode formed as a hot cathode or an electrode that emits electrons. Ru. This increases the plasma density of the magnetron discharge plasma. the spot If a metal or metal alloy layer is deposited instead of a hard material layer, the sputtering source The temperature load on the workpiece is relatively reduced due to the local increase in the plasma density of the plasma. growing.

Similarly, US-A-4389299 also describes a method using thermally emitted electrons. It has been proposed to increase the plasma density of gnetron plasmas.

Other documents related to the prior art include EP-A-0328257, DE-A -3503397 Kohan, DE-A-4115616, EP-A-028 2835 and DE-A-3426795.

From EP-A-0328257, the layers are alternately in metallic mode and in reactive mode. The optical workpiece is formed by cathode sputtering. It is known to form optical layers by depositing them. For this purpose, the optical workpiece is approximately 5 A relatively high frequency of 0 Hz is alternately supplied to the above-mentioned layer formation source. In that case Considering the relatively large clock frequency used between reaction mode and metal mode , complex measures have to be taken to move the workpiece rapidly accordingly. No. This also creates an arbitrary connection between each source to separate the two layer modes mentioned above. This is also due to the inability to insert short gaps in the When the workpiece is moved in the processing atmosphere Despite this, and despite the gas diffusion process, locally mainly metal moieties ensure mode conditions and locally predominantly reaction mode conditions separated therefrom. care must be taken.

The problem of the present invention is to prevent hard materials from forming on series parts at low temperatures below 300'C. material can be deposited economically and that is at least equivalent to a layer deposited by ion blasting and as described above. Overcoming the drawbacks, e.g. with respect to the treatment described in EP-A-0328257 The object of the present invention is to provide a method of the kind mentioned at the outset.

This problem is solved by the method described above in the characteristic part of the first hood of the claim. .

According to it, the workpiece surface to be coated is alternately cathode sputtered. and undergoes other plasma discharges that have little involvement in cathode sputtering. other The plasma discharge apparently homogenizes and compresses the previously coated surface. This is because the plasma density of cathode sputtering is higher than that of other plasmas. Even if the temperature is increased by the discharge, it is not increased that much, so the temperature of the workpiece is The degree load will not exceed the required maximum value. In other plasma discharges, first The actual post-processing of the formed layer components has taken place and no significant changes in the layer materials can take place anymore. do not have.

According to the wording of claim 2, the surface to be coated can be coated in the simplest way. Rotating or rotating the workpiece for cathode sputtering and other plastics. Directed alternately to the Zuma discharge.

According to the wording of claim 3, what is important in that case is that in particular the surface In order to optimally utilize other plasma discharges when curved, other plasma The tangential plane to the surface to be coated, directed towards the discharge, lies approximately in its central region. In the area, it should be almost parallel to the tangent line that touches the discharge path of other discharges. In that case, there is a nearly uniform plasma density distribution of the above-mentioned discharge along the above-mentioned surface. fully utilized.

In particular for coating series products, it is further specified in the wording of claim 4. It is proposed to do as described above.

In that case, a preferred method has the characteristics as indicated in the wording of claim 5, In that case, the expression "swivel motion" means It is a rotational movement in which the workpiece is rotated by itself. be.

According to the wording of claim 6, the other plasma discharge is formed as a beam discharge. By separating the affected area of cathode sputtering and other plasma discharges is further formed.

In a highly preferred embodiment of the method according to the invention, i.e. According to the wording, with respect to the deposited layer material, including its stoichiometry, the layer has an approximate odor. Deposited by cathode sputtering. The layer material deposited in that case It is post-treated and especially compressed by means of a plasma discharge.

For this purpose, preferably, as indicated in claim 8, the other plasma discharge is approximately carried out as a discharge in an inert gas, for example argon, in which case a neutral gas atmosphere Absolute separation between the gas and the reactant gas atmosphere is not required. However, the reaction gas atmosphere approximately in the area of the cathode sputtering source, preferably the magnetron, and Other plasma discharges, especially arc discharges, are recommended to be operated in a neutral gas atmosphere. It will be done.

In order to obtain the claimed layer properties as indicated in the wording of claim 9 in that case. The post-treatment of the layer deposited on the This is done by ion shooting.

According to the wording of claim 1θ, the action of the other plasma discharge provided is , the potential of the workpiece is chosen to be negative with respect to the plasma potential of the other discharges. preferably less than +IOV, preferably at most +5v, particularly preferred or up to -5V, preferably between -5V and -300V, typically about -15V. Optimization is achieved by selecting 0V. This is approximately +20V relative to ground. is based on the plasma potential of other plasma discharges.

Furthermore, the above-mentioned phenomena make it difficult for cathode sputtering and other plasma discharges. In a preferred embodiment of the method of the present invention, there is no need to stop for rapid replacement of workpieces. According to the wording of claim 11, this exchange frequency is at most 30Hz. , preferably at most 1 OHZ, preferably even below IHz, typically about 0 ．． It is 1Hz. This results in structural components for the workholder and workpiece drive. A significant reduction in the cost of cathode sputtering and other plasma discharges is obtained. This is done by being able to achieve extremely slow exchange movement between sections.

In the method set forth in claim 12, by adjusting the beam, other beams can be The plasma density to which the work surface on the plasma discharge side is exposed should be adjusted in relation to the post-treatment process. for optimization and also for other process steps, i.e. heating or etching. It becomes possible to adjust it to suit your needs.

According to the wording of claim 13, for the above-mentioned purpose preferably the workpiece is The applied potential is also adjustable, allowing for different surface treatment and post-treatment processes. processes can be implemented and optimized.

This type of control can be achieved by the closed loop control according to claims 14 to 15. Even at work points that would otherwise be unstable, i.e. cathode sputtering At the point of operation where the surface to be sputtered of the ring source is contaminated as is known Also, optimal stabilization of the reactive cathode sputtering process is achieved.

Preferred embodiments of the reactant gas supply as well as the closed loop control described above include two or multiple Claim 16 does not apply if a cathode sputtering source of and is defined by Section 17.

As shown in the wording of claim 18, the workpiece is subjected to cathode sputtering. As already explained, furthermore, by being able to shield other Selective treatment of the workpiece surface only by plasma discharge, e.g. etching It becomes possible to

In such a process step, which is provided, for example, before layer deposition, , only a rare gas such as argon can be introduced as the working gas. same Sometimes a shield allows the cathode sputtering source to sputter freely. be able to. In that case, as is known, sputtering is subsequently performed for layer deposition. The target for cathode sputtering is, for example, an oxide that occurs in a standard atmosphere. The layers are cleaned.

As described in claim 19, a predetermined portion of the work surface on the other plasma discharge side altering other plasma discharges at the location and/or altering the potential of the workpiece. The surface can be etched or heated by etching or heating the surface. the spot For example, increasing the electrical discharge current and/or changing the plasma beam Therefore, the plasma density can be changed.

In particular, it is important to select the plasma density of other plasma discharges in the region of the workpiece surface. Therefore, as mentioned above, it can also be done by beam control of other plasma discharges and/or or by its output control, and according to the wording of claim 20. According to, by selecting the potential of the workpiece, a workpiece temperature lower than 300°C can be obtained, Nevertheless, as shown in the wording of claim 22, at least However, in terms of the properties required for this type of layer, such as wear properties, ion braking A layer of hard material similar to that deposited by the heating method is deposited.

According to the wording of claim 23, the coating device according to the invention Featured in the preferred embodiments set forth in the range items 24 to 36.

The present invention will now be described in detail with reference to the accompanying drawings.

FIG. 1 illustrates the principle of the method of the invention or the coating of the invention using preferred construction examples. 1 is a side view and a top view schematically illustrating the principle of the device in the form of a basic processing sequence; Figure 2 shows that the workpiece surface to be considered is different from the cathode sputtering mode shown in Figure 1. A preferred method of moving to a plasma processing mode or the present invention relating thereto 1 schematically illustrates a preferred method carried out in an apparatus according to FIG. 3 shows the cathode sputtering region and other plasma in the process of FIGS. 1 and 2. The area of the macer discharge is related to the workpiece, and the area of the cathode sputtering is related to the workpiece. Demonstrates in principle the various process modes carried out by controlling and shielding FIG. 4 is a schematic longitudinal sectional side view of the processing apparatus according to the present invention, and FIG. 5 shows the device of FIG. 4, preferably provided with further means.

In FIG. 1 showing the outline and principle of the method of the present invention, 1 is a cathode sputtering source; In particular, it shows the sputtered surface of the magnetron source, i.e. the target. Ru.

Another plasma discharge section 3 is provided apart from the cathode sputtering source 1. Ru. The other plasma discharge section 3 is the most common consideration, as schematically indicated by the power source 5. The method uses DC drive, AC drive up to the microwave range, or AC superimposed on DC. is driven by. In Figure 1, other plasma discharges occur between two electrodes, i.e. capacitively other plasma discharges are discussed here. In the most common case, it can be generated by any known method.

According to the invention, the workpiece 7 has its surface to be coated cathode sputtered. Alternate exposure to ring source I and additionally provided plasma discharge in section 3 be done. This is indicated schematically in FIG. 1 by the double-headed arrow S.

FIG. 1 also shows a vacuum reaction vessel 9 in dotted lines.

The gas to be ionized, for example argon, is reacted from the tank 12 via the control valve 11. It is introduced into the reaction vessel 9. Furthermore, preferably the area of the cathode sputtering source l Then, the reaction gas or reaction mixture gas is transferred to the tank device 15 by the gas introduction device 13. is introduced in a controlled or regulated manner by a valve device 17. At least the main A reactive coating process in the area of cathode sputtering source is carried out and the deposited layer is "improved" in the region of the other plasma discharge section 3.

In a preferred embodiment, the cathode sputtering process is closed-loop controlled. Ru. In that case, preferably a plasma emission monitor is used as a sensor for the controlled variable X to be measured. A detector head is used, specifically placed in the immediate area of the cathode sputtering source. be placed. The output signal is analyzed by a plasma discharge monitor (not shown) and It is compared with the guide signal W in the minute unit 21. Preferably a reaction vessel as a manipulated variable The material flow of the reactive gas supplied to 9 or its mixing ratio is controlled by the valve system fl17. is adjusted accordingly. This may take place via the controller 23.

However, the cathode sputtering process can also be used in other ways, e.g. Using a crystal layer thickness measuring device as a recording device for the controlled variable measured using a sensor or as a recording device for the controlled variable measured It can be controlled by measuring the sputtering rate. of reactive gas Alternatively or in addition to adjusting the electrical drive voltage of the sputtering source, It is also possible to adjust the magnetic field generation of the magnetron source.

In FIG. 1, a controllable shielding device 25, such as a mask, is shown in dashed lines. . A cathode sputtering source within the reaction vessel 9 (controlled) by a shielding device. Shielding the spatial region with 1 from other spatial regions with plasma discharge section 3 I can do what I want.

This is provided in the preferred embodiment of the invention.

In this way, as shown in particular in FIG. The shield 25 can be closed and the cathode The sputtering source 1, preferably a magnetron, is free to sputter. can. At the same time etching the surface 7 of the workpiece exposed to another plasma discharge 3. , heating or, in principle, plasma surface treatment. For this purpose, Figure 1 The power supply 5 regulates the output of the other plasma discharge sections, for example the discharge current, and/or or the beam of another plasma discharge 3 controlled by the magnetic field B and the corresponding control. In order to obtain a controlled power density distribution, the surface of the workpiece 7 on the plasma discharge 3 side is The plasma density at is adjusted as desired.

In order to control the treatment process carried out in that case on the above-mentioned surface, furthermore , as schematically illustrated in FIG. 1, the potential φ7 at the workpiece 7 is adjusted as desired, and Therefore, as is well known to those skilled in the art, the ion shooting density and the impurities in the workpiece 7 are On-shooting strength can be adjusted. In that case, φ73 is preferably selected to be negative compared to the Zuma family t3 plasma potential, preferably +10V lower, preferably at most +5V, especially at most -5V, in which case Preferably it is selected to be between 15 and 300V, typically about -150V.

In particular, as shown in Figure 3, if a rare gas such as argon is present in the reaction vessel, is distributed substantially uniformly within the container. In particular, the reaction gas r is The cathode is introduced in the immediate area of the sputtering source l. However, the point in Figure 3 As shown by the line, the shield 25 is preferred in other areas of the plasma discharge 3. If you are attempting to carry out a reactive process when it is legally closed, It is also possible to optionally inject the reaction gas.

As is clear from the figure, according to the invention the workpiece surfaces to be coated are alternately Exposure to target surface treatment or other plasma discharges of cathode sputtering sources3 be done. This is illustrated below in FIG. 1 in a schematic top view. In that case , the electrical work potential φ7 in the region of the cathode sputtering source φ71 is set to , φ73 to be different from those in the other plasma discharge regions indicated by φ73. Of course it is possible.

The alternate exposure of the surface to be coated of the workpiece 7 is as shown in FIG. This is preferably carried out by a pivoting or rotating movement. For that purpose work 7 The surface to be coated is alternately connected to a sputtering source and another plasma emitter. It is rotated around the rotation axis A so as to face the electric discharge path P. That is ω2 It is shown. Alternatively, the work 7a is the work itself, such as a disk-shaped work. It is rotated at ω1 around the axis A of , and both surfaces thereof are coated. Exchange Lower frequencies are more effective as conversion frequencies, resulting in significant simplification. be done. The frequency effectively used is up to 30Hz, preferably 10H z, more preferably at most I Hz, typically about 0.1 Hz. be.

If the surface to be coated is curved, at least approximately In order to ensure uniform plasma density distribution, the tangential plane E touching this plane is Position it so that it is almost parallel to the tangent line T to the discharge path P of the plasma discharge. Must be.

FIG. 4 schematically shows a longitudinal section through the device according to the invention. In Figure 4, Figures 1 to 3 are Functional units and variables that have been referenced and explained are given the same reference numerals.

Exhaust sleeve 27 for a vacuum pump, having a substantially cylindrical shape centered on the central axis Z Two or more cathode sputters are placed on the outer surface of the vacuum processing chamber 9 having A sounding source l is mounted in an electrically isolated manner. In that case, preferably , magnetic field assisted sputtering sources are generally known by the concept of magnetron sources. It is something that Similarly, as is known, the sputtering source is enclosed in an anode ring 29. solid target plates 31 that are surrounded and each to be sputtered; is nurturing.

Magnets well known to those skilled in the art and not shown or used effectively Sputtering is performed statically or dynamically in a tunnel-like magnetic field in a Ron sputtering source. Occurs above the target surface to be ringed. As a result, roughly PLI As shown, the plasma density of the cathode sputtering source plasma increases significantly. It will be done. The gas introduction device 13 for the reaction gas r is connected to the target table to be sputtered. located directly in the area of the surface. This is shown in Figure 4 for ease of viewing. It is shown only on the right side of TRON 1. Preferably, this It is formed by at least one bi-probe 33 surrounding the target surface side. having an outflow opening for the gas, through which the gas is preferably at an angle of approximately 45°; Then, the reaction gas is blown onto the surface of the target 31.

An ionization chamber 35 is provided coaxially with respect to the central axis Z, and this ionization chamber 35 The reaction chamber communicates with the interior space of the reaction vessel 9 via the mask 37. Like In other words, the mask 37 is applied to the walls of the ionization chamber 35 as well as to the walls of the reaction vessel 9. It is also electrically insulated by the insulator 39. similarly electrically isolated , a heater current terminal 43 is present in the ionization chamber 35 as an electron emitting cathode. A hot cathode 41 is provided. Coaxially to the above-mentioned axis Z, the mask An anode 45 is placed in the reaction vessel 9 opposite to the opening of the reaction vessel 37. It is insulated and installed. In a known manner, an ionization chamber 35 and Between the anodes 45 a low voltage plasma discharge as another plasma discharge 3 is applied to the mask. 37 in the form of a plasma beam.

Regarding the construction of a low-voltage arc evaporation section of this kind, for example Swiss Patent Publication No. 63 1743 in detail.

Another gas inlet 11 for the gas to be ionized, such as argon, is connected to the ionization chamber. It is provided on the bar 35. Furthermore, one or more coils are arranged coaxially with respect to the axis Z. 47 is provided, and this coil generates a nearly axial magnetic field within the reaction vessel 9. be born. By changing the magnetic field coupled by the coil 47, other discharges can be generated. The beam of the plasma beam No. 3 is adjusted.

A workpiece support device 49 is provided around the anode 45 . support device A support ring 51 is provided. This support ring is centered on the central axis Z. and rotates on the roller 53. distributed over the circumferential surface of the ring 51 by the motor 54 At least one of the rollers 53 is driven. On the ring 51, there is a A plurality of rotary stands 55 erected in rows are electrically insulated and rotatably supported. held. For this purpose, the drive roller 57 is fixedly attached to the wall of the reaction vessel 9. It engages with a cylindrical portion 59 which is attached and coaxially disposed with respect to the axis Z. in addition Therefore, the rotating stand 55 rotates around its own axis as shown by ω55, and at the same time Then, the ring 51 rotates about the central axis Z as shown by 51.

A tree-shaped rotating stand 55 is provided with a plurality of projecting supports 61. The workpiece 7 is suspended or placed on it and held. . In this way, the workpiece 7 is rotated by the rotational movement ω55, so that each cathode sputtering The source 1 region and other plasma groups are rotated alternately into the 3 region, and at the same time rotational movement is performed. Due to the movement ω51, one cathode sputtering source 1 to the next cathode sputtering transferred to the source. Further, numerals 65 and 63 drive the cathode sputtering source l. for moving or applying a potential to the electron-emitting cathode with respect to the anode 45. It is a power source.

Additionally, an adjustable power source 67 is provided. For example, the motor 54 The workpiece is moved through the drive shaft, roller 53, ring 51, rotary stand 55, etc. 7 is adjusted.

In FIG. 5, the device shown in FIG. 4 is illustrated again. However, in Figure 5, the drawing is Other preferred means not shown in FIG. 4 for clarity are shown. There is. For each cathode sputtering source 1 a measurement value detector 70, preferably a prism A detection head for a plasma emission monitor is provided. This is indicated schematically at 72. It is formed in a shape corresponding to the radiation of other plasma discharges 3 and arranged so that Shielding is performed by the placed shield. The output signal of each measured value detector is evaluated. After that, it is compared with a predetermined target value or guide value, the same value W according to FIG. The calibration results were set as control deviation Δ for each cathode sputtering source 1. The actuators preferably each have an actuator formed by a control valve in the reactant gas supply. is supplied to the actuator 74.

This allows the coating process to be performed individually in each cathode sputtering source 1. be effectively controlled. Therefore, especially when working with electrically poor or non-insulating layers, The reaction product is a solid reaction product that is sputtered from the source when coating a liquid. Using reactive gases, work points that would not be stabilized without closed-loop control, i.e. If the sputtered target surface becomes contaminated with the above-mentioned defective or non-conductive reaction products, If more contaminated, the coating process will be completely interrupted, so to speak. The work points that can no longer be controlled due to loose [arcing] are also investigated. It becomes possible to make a clause.

More preferably, each cathode sputtering source 1 and the workpiece support device 49 are moved. The shield 74 is moved in a controlled manner between the road and the road, e.g. It is set up to do so. Each shield 74 is moved by a drive device 76 to a target. Introduced between the surface and the gas introduction pipe 33 and the workpiece support 49, and this When the workpiece is pulled back from the area, the corresponding workpiece is cathode sputtered. be exposed.

The above-described method and the equipment effectively used are particularly useful for cutting tools and workpieces into hard stones, especially Nitride layer, carbide layer consisting of titanium nitride, or also known as anhydrite layer or nitrogen oxide layer or with tantalum, titanium, hafnium, zircon Or suitable for coating with mixtures with aluminum. In that case As a solid, preferably a metallic phase such as titanium is sputtered, in which case a sub-nitrogen phase is sputtered. Cathode sputtering of oxidation, sub-oxidation, or sub-carburization compounds is completely unnecessary. It is possible.

Next, coating the drill will be explained using FIGS. 4 and 5. This figure shows the processing in such a device.

1.Heating The vacuum reaction vessel 9 is evacuated to 2 x 10-' mbar. work support The drive device is activated and the hot cathode is heated with a heating current of 150A. Three argon is introduced through the bull to a pressure of 3 × I O-3 mbar, Subsequently, a low voltage arc discharge 3 is ignited. Its discharge current is adjusted to 60A.

Afterwards, the argon pressure was reduced to 25×1O-’mbar and the rotating workpiece was is plasma heated for about 12 minutes. The unit 67 sets the potential of the workpiece, e.g. Adjusted for grounded reaction vessel walls.

2. Etching The argon pressure inside the reaction vessel was increased to 3 × I O-2 mbar, and the coil 4 7, the plasma beam of radiation t3 is particularly focused. Is it the discharge flow of arc discharge 3? Increased to 70A. Lower the potential of the workpiece to approximately -200V using the power supply 67. As a result, the ion acceleration voltage toward the workpiece is increased, and the workpiece surface is etched. will be processed. Mask 74 is preferably closed during this etching process. Therefore, the etching process is carried out in the central chamber part of the reaction vessel 9. Sometimes the target surface of the cathode sputtering source sputters freely. be able to.

3. Coating The argon pressure was increased to 18,10" mbar, and the plasma discharge 3 was discharged. The electric beam is defocused by decreasing the coil current in coil 47. discharge 3 The discharge current is further returned to about 50A. The cathode sputtering source is turned on. , the shield 74 is pulled back and the workpiece is moved as shown in ω55. By rotating the center of each cathode sputtering source 1 and the other discharge 3 alternately Exposure to plasma beam.

According to the method and apparatus of the present invention, a hard material layer is formed, and this hard material layer is It satisfies almost the same requirements as the layer formed by onblating.

3. High speed w4H3 using the device shown in FIG. 5 according to the process described above. A 6 mm drill consisting of S was coated with TiN. Provided in the device shown in Figure 5 The rotation speed ω55 of the 16 trees shown was approximately 0.1 Hz.

The following table shows the results of drilling tests by varying the coating process parameters. The results are summarized in the number of holes. Standard for quality assurance as drilling test test was used. Therefore, the "number of holes" is a relative quality standard of the drill. be.

Comments on the tests shown in the table Number 1: Sputtering by low voltage central discharge (NZE) with an arc current of 90A. base The plate current is four times that of No. 8. Therefore, the sputtering temperature is higher (310℃) . Due to the high plasma density at the center of the workpiece, a compact layer with a golden glow can be obtained. It will be done. The performance during drilling tests is much better than, for example, with the 8x.

No. 2 and No. 3: Sputtering with smaller NZE-plasma flow-current density.

Ion shooting in the workpiece and the resulting base temperature are small.

However, the layers are still compact and shiny. Moreover, the performance during the drilling test The score is better than No. 1.

Number 4: By reducing the substrate current, the coating temperature is lowered and the drilling performance is improved. No decrease.

Number 5: Higher coil current (IOA) increases the degree of ionization of argon, thereby The NZE plasma density (substrate current) at the plate increases. Drilling results are somewhat good. However, the temperature is significantly higher compared to batch number 6.

Number 6: Good drilling results at the lowest coating temperatures. Optimal combination of magnetic field and arc current height. The layers are compact and gold.

Number 7: In fact, the NZE plasma density in the sample without coil current is satisfactory. This resulted in a coarser layer structure and poorer drilling performance.

Number 8.

Purely reactive sputtering (no low voltage center discharge). lowest temperature achievable (by 3X8kW), however, the drilling results are not coded. Similar to Lil. Matte, brown layers with a coarse, stalk-shaped structure.

Number 9.

The deposition rate increases significantly with a sputtering power of 12 kW. However, number 6 With the batch parameters of The plasma density at the workpiece is too small to be guaranteed. Layers are too compact However, the drilling performance deteriorated significantly.

No. 1 O.

NZE plasma flow of 45A - 3X12kW sputtering output for the first time with current density Ar ion shooting in the workpiece in force results in compact layer deposition became sufficient to make it possible. The drilling results are good, but the temperature is 300° Exceed C.

Claims (1)

[Claims] 1. The solid phase is cathodically sputtered (1) into the reactant gas atmosphere and onto the workpiece. Depositing a layer on a workpiece in which a layer consisting of the reaction products of a solid and a reactant gas is deposited. In addition to cathode sputtering plasma discharge (PL1), At least one other plasma discharge (3) is generated to completely coat the workpiece. The surface is directed alternately towards cathode sputtering (1) and another plasma discharge (3). A method for depositing a layer on a workpiece, characterized in that: 2. The alternating orientation is the turning motion (ω2) or rotation of the workpieces (7, 7a). The method according to claim 1, characterized in that the method is carried out by a rolling motion (ω1). . 3. The tangential plane tangent to the surface to be coated (E ) to the tangent that touches the discharge path (P) of another discharge (3) in its central region. The method according to claim 1 or 2, characterized in that the two surfaces are substantially parallel to each other. . 4. At least two locally separated cathode sputters are performed and the workpiece preferably in a continuous rotational motion and preferably periodically Claims 1 to 3 are characterized in that they are exposed to cathode sputtering. The method described in any one of Section 3. 5. A sputtering source (1) is arranged along a circular trajectory and a workpiece (7 ) is moved past the source (1) along a circular trajectory (ω51) and other plasma discharges (3) is the discharge path (P) that is almost perpendicular to the circular locus plane, and is approximately at the center (P) with respect to it. Z) and the workpieces (7) are oriented alternately so that there is a swiveling or rotational transition. 5. A method according to claim 4, characterized in that the method is operated by: 6. The other plasma discharge (3) is preferably an arc discharge or a beam discharge. Claims 1 to 5 characterized in that it is formed as a low voltage arc discharge. The method described in any one of the paragraphs. 7. The layers are generally deposited by cathode sputtering and other plasma discharges. According to any one of claims 1 to 6, the method is characterized in that it is subjected to post-processing. the method of. 8. Other discharges may be discharges in a generally inert gas, e.g. argon. The method according to claim 7, characterized in that 9. The post-treatment is particularly ion shooting with inert gas ions. 9. The method of claim 7 or 8. 10. Potential at which the workpiece is negative compared to the plasma potential of other plasma discharges connected to, preferably more negative than +10V, preferably at most +5V, preferably preferably at most -5V, preferably between -5V and -300V, typically about -1 Any one of claims 1 to 9, characterized in that it is connected to a potential of 50V. or the method described in paragraph 1. 11. Exposure of the workpiece to alternating plasma discharges of up to 30 Hz, preferably preferably up to 10 Hz, preferably below 1 Hz, typically around 0.1 Hz. According to any one of claims 1 to 10, characterized in that the method is carried out at wave numbers. Method described. 12. Claims characterized in that the beam and/or discharge power is adjusted The method described in Section 6. 13. The electric potential (φ7) in the workpiece (7) is adjusted. The method described in scope item 7. 14. The mass flow of reactant gas supplied is preferably as a sensor of the control variable (X) closed-loop control using at least one plasma discharge monitor (19,2 1, 17) according to any one of claims 1 to 13, characterized in that the method of. 15. of the reactant gas introduced into preferably the immediate vicinity of the cathode sputtering source. Cathode sputtering where the mass flow is controlled and as a sensor of the controlled variable (X) In the immediate vicinity of the source (1), each plasma emission measurement head (70) is connected, inter alia, to another plasma emission measuring head (70). It is arranged so that it is almost blocked (72) with respect to the rays of the Zuma discharge (3). 15. A method according to any one of claims 1 to 14, characterized in that: 16. A reactant gas is introduced (3) in the immediate vicinity of the cathode sputtering source (1). 3) The method according to any one of claims 1 to 15, characterized in that: . 17. The reactant gas mass flow is separately applied to each cathode sputtering source (1). according to claims 4 and 16, characterized in that (75) Method. 18. The workpiece (7) is controlled and sealed relative to the cathode sputtering source (1). Claims 1 to 17 characterized in that: (25, 74) The method described in any one of the above. 19. Another location of the workpiece (74) directed towards the other plasma discharge (3) side by changing the plasma density of the plasma discharge and/or applied to the workpiece (7). The surface etching process of the workpiece (7) or Any of claims 1 to 18, characterized in that a heating process is performed. The method described in item 1. 20. Workpiece temperature is maintained below 300°C, preferably at most 250°C 20. A method according to any one of claims 1 to 19, characterized in that: 21. Characterized by the use of a magnetron as the cathode sputtering source 20. The method according to any one of claims 1 to 19. 22. The method according to any one of claims 1 to 21 is applied to a hard material layer. Titanium, tantalum, zircon, hafnium for deposition, especially tools such as helical drills Deposition with a carbide layer, nitride layer and/or nitrogen oxide layer such as aluminum, etc. To be used for products. 23. a vacuum reaction vessel; at least one cathode sputtering source having a plasma discharge section; at least one gas for introducing a working gas, including a reaction gas or a reaction mixture; an introduction device; In a coating device having a workpiece support device, a coating is carried out in a reaction vessel (9). Along with the plasma discharge section (PL1) of the sword sputtering source (1), it is Another plasma discharge section (3), which can be driven independently, is provided to support the workpiece. At least a part of the body device (49) is located between the source (1) and the other plasma discharge section (3). The surface of the workpiece held by it is driven by the cathode sputter. characterized in that it is directed alternately towards the taring source (1) and the other plasma discharge section (3) coating equipment. 24. At least two cathode sputtering sources (1) are provided and the The arc support (49) is configured to be movable in a drivable manner so that the provided The sputtering source (1) is characterized in that it passes close to the cathode sputtering source (1) Scope of Claim 23. The device according to item 23. 25. The cathode sputtering source (1) directs the surface normal of the sputtering surface (31) The workpiece support device (49) is arranged along a circle in a substantially radial direction. It is mounted movably on a concentric (Z) trajectory along the sputtering source (1). and another plasma discharge section (3) is formed by a center (Z) and a circular locus. Claim 24, characterized in that it is arranged substantially perpendicularly to the circular surface. Equipment described in Section. 26. Installed on the work support device (49) almost parallel to the other discharge section (3) A stand (55) is provided, and the stand is centered around its axis (ω 55) The device according to claim 25, characterized in that it is driven and movable. Device. 27. The workpiece support (49) is provided with at least one deflection device (55, 61). The surface of the workpiece (7) supported on the workpiece support is alternately Claim 25, characterized in that it is directed radially outwardly and radially inwardly. or the device according to paragraph 26. 28. At least one cathode sputtering source (1) provided Claims 23 to 2, characterized in that the source is a netron sputtering source. The device according to any one of Item 7. 29. Controls the amount of gas introduced through the gas introduction device (13), especially the weight of the reaction gas A control circuit (19, 21, 17) is provided to control the controlled variable. A plasma emission monitor detection head (19) is provided as a sensor for Apparatus according to any one of claims 23 to 28. 30. At least two cathode sputtering sources (1) are provided and the gas The reactant gas is introduced into the gas introduction device, in particular in the area of each cathode sputtering source (1). An introduction device (33) is provided for introducing, and preferably an end cathode For each sputtering source, gas is introduced as an operating member (75) of the control circuit. a control circuit with actuating members in each case, preferably a plasma as a sensor for each controlled variable; A control circuit having a detection head of a discharge monitor is provided. Apparatus according to any one of claims 23 to 29. 31. One or more plasma emission monitor detection heads (70) It is characterized by being substantially shielded (72) from the light rays in the discharge section (3). 31. The device according to claim 29 or 30. 32. Another plasma discharge section (3) can be used as a plasma beam discharge section or The arc discharge section is preferably designed as a low-voltage arc discharge section. The device according to any one of claims 23 to 31, characterized in that: . 33. A hot cathode (41) and an exhaust mask (3) are placed in another plasma discharge section (3). 7) is provided with an ionization chamber (35) having: The apparatus according to paragraph 32. 34. Controllable magnetic field generating means for controlling the beam of plasma light (3) Claim 32 or 33, characterized in that (47) is provided. The device described in. 35. A controllable shield (74) connects the cathode sputtering source (1) and the workpiece. Claims 23 to 4 are provided between the supports (49). 35. The device according to any one of paragraphs 34. 36. At least a support part for the workpiece (7) provided on the workpiece support body (49) (61) is connected to a power source (67) to control the application of its potential. The device according to any one of claims 23 to 35, characterized in that: 37. In the other discharge sections and in the area of the cathode sputtering source, e.g. The inert gas supply pipe connected to the inert gas tank such as the The device according to any one of claims 23 to 36, characterized in that: 38. The part of the work support device provided for contact with the work is powered by a DC power source. and its DC power supply connects the part to +10V more negative, preferably preferably at most +5V, preferably -5V, preferably -tV and -300V , typically connected to a potential of about -150V during The apparatus according to any one of Items 23 to 37. 39. Workpieces, especially tools such as drills, are preferably coated with a carbide layer, a nitride layer or a nitride layer. elemental oxide layer or its, especially titanium, tantalum, hafnium, zircon or Claim 2 for hard material coating with a mixed type layer of aluminum Use the device described in any one of Items 3 to 38.