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JPH0750759B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH0750759B2
JPH0750759B2 JP63165551A JP16555188A JPH0750759B2 JP H0750759 B2 JPH0750759 B2 JP H0750759B2 JP 63165551 A JP63165551 A JP 63165551A JP 16555188 A JP16555188 A JP 16555188A JP H0750759 B2 JPH0750759 B2 JP H0750759B2
Authority
JP
Japan
Prior art keywords
resin
semiconductor chip
molding
main surface
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63165551A
Other languages
English (en)
Other versions
JPH0215660A (ja
Inventor
圭司 山村
明照 ▲頼▼
孝 貫井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP63165551A priority Critical patent/JPH0750759B2/ja
Priority to EP19890111856 priority patent/EP0348972A3/en
Publication of JPH0215660A publication Critical patent/JPH0215660A/ja
Publication of JPH0750759B2 publication Critical patent/JPH0750759B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

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    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L23/3135—Double encapsulation or coating and encapsulation
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、半導体装置、特にそのパツケージングに関す
る。
〈従来技術〉 近年、複数の半導体チツプをシステムとして駆動するの
に有効な手段として、これらの半導体チツプを単一のセ
ラミツクパツケージ内に三次元実装する、いわゆる三次
元マルチチツプ実装が多数提案されている。しかしなが
ら、これらの手法は高価なセラミツクパツケージを用い
るため、パケージコストが高くつくという問題点があり
広範な需要を得るための障害となつている。
この問題点を解決する手段として、安価な樹脂成形パケ
ージを利用した三次元マルチチツプパケージが既に、特
開昭56−62350号、特開昭56−62351号および特開昭58−
130553号（以下第一従来例という）で開示されている。
しかしながら、第一従来例においては、半導体チツプは
リードフレームのチツプ取付部の両面に固定され、半導
体チツプ間の電気的接続はリードフレームを介して行わ
れるため、半導体チツプ間の多端子接続を行うことがで
きないという問題点があつた。
そこで、上記問題点を解決するために特開昭61−248541
号（以下、第二従来例という）において、二種の半導体
チツプをフイルムキヤリアを介して主面同士を一定の間
隔を設けて対向接続する手法が提案されている。
〈発明が解決しようとする問題点〉 しかし、第二従来例では構造的には半導体チツプ間の多
端子接続が可能であるが、フイルムキヤリア方式を採用
しているため、電極の取り出しは半導体チツプ上の素子
のない周辺領域に限定される。さらに、対向する半導体
チツプの主面間には樹脂材料等を充填しない構造のた
め、樹脂成形時の熱と樹脂充填圧力（通常50〜100kg/cm
2）により半導体チツプが変形を生じ、素子特性が損な
われるという問題点があつた。
また、半導体チツプの三次元構造に関してはこれらのほ
かに、例えば特公昭58−45822号（以下第三従来例とい
う）、特開昭59−88863号（以下第四従来例という）等
が提案されているが、第三従来例においては、半導体チ
ツプ間は第二従来例と同様に空洞であり、また第四従来
例においては半導体チツプ間の周辺部分のみを樹脂によ
り固着せしめている。このため、これらの半導体チツプ
を成形用樹脂によりパケージした場合には、同様に半導
体チツプが変形を生じ、素子特性が劣化するという問題
点があつた。
そこで、本発明は、複数の半導体チツプを多端子接続で
き、半導体チツプの変形による素子特性の劣化なしに樹
脂成形パケージングができ、さらに小型かつ多機能な半
導体装置を提供することを目的とする。
〈問題点を解決するための手段〉 本発明による問題点解決手段は、第1,2図の如く、成形
樹脂１により形成された単一のパツケージ２内に複数個
の半導体チツプ3,4とリードフレーム５とを有し、第一
の半導体チツプ３の主面3a上の電極端子3bと第二の半導
体チツプ４の主面4a上の電極端子4bとがハンダ８を介し
て接続され、両半導体チツプ3,4の主面3a,4aの間の全部
または大部分に、前記成形樹脂１の樹脂成形熱と樹脂充
填圧力に耐え得り、かつ前記成形樹脂１とは異なる熱硬
化性変形防止樹脂13として、エポキシ樹脂、尿素樹脂、
メラミン樹脂、フエノール樹脂から選択された一つの変
形防止樹脂13が充填されたものである。
〈作用〉 上記問題点解決手段において、第一の半導体チツプ３の
主面3a上の電極端子3bに第二の半導体チツプ４の主面4a
上の電極端子4bをハンダ８を介して重ね合わせ、リフロ
ー法により接続する。そして、両主面3a,4aの界面に、
成形樹脂１の樹脂成形時の熱と樹脂充填圧力に耐え得る
熱硬化性変形防止樹脂13を充填して硬化させる。このと
き、変形防止樹脂13が硬化してもハンダ８と熱膨張率が
同程度であれば、ハンダ８の接続部にかかる応力は小さ
く、剥離等の欠陥は生じることがない。その後、成形樹
脂１を注入してパツケージ２を成形する。
これにより、成形樹脂充填時の熱や圧力等による半導体
チツプの変形に起因する素子特性の劣化を防止すること
ができるので、複数の半導体チツプを多端子接続でき、
半導体チツプの変形による素子特性の劣化なしに樹脂成
形パケージングができる。
〈実施例〉 以下、本発明の実施例を図面により説明する。第１図は
本発明半導体装置の断面図、第２図は同じくその要部拡
大断面図である。
図示の如く、本発明半導体装置は、成形樹脂１により形
成された単一のパツケージ２内に複数個の半導体チツプ
3,4とリードフレーム５とを有し、該第一の半導体チツ
プ３の主面3aと他の少なくとも一個の第二の半導体チツ
プ４の主面4aとが対向して配置さている。
前記第一の半導体チツプ３の主面3a上には、第２図に示
す如く、前記第二の半導体チツプ４の電極端子4bと電気
的に接続される電極端子3bと、前記リードフレーム５の
電極端子5aに電気的に接続される電極端子3cが形成さ
れ、その他の主面3a上には保護膜６が形成されている。
一方、前記第二半導体チツプ４の主面4a上には、前記第
一の半導体チツプ３の電極端子3bと電気的に接続される
電極端子4bが形成され、その他の主面4a上には保護膜７
が形成されている。
前記電極端子3bの表面には、前記第二半導体チツプ４の
電極端子4b上に形成されたハンダバンプ８との良好な電
気的接続を得るため、例えばチタン・タングステン合金
（800Å）／銅（2400Å）ハンダ（５μｍ）のような三
層構造金属膜９が形成されている。
また前記電極端子4bの表面には、前記ハンダバンプ８を
形成するため、例えばチタン・タングステン合金（800
Å）／銅（2400Å）のような二層構造金属膜10が形成さ
れ、その上にハンダバンプ８が蒸着法、メツキ法等によ
り形成されている。
前記ハンダバンプ８の材料としては、前記成形樹脂１の
充填時の温度（170〜190℃）に耐え得るものを選ぶ必要
があり、本実施例ではスズ（Sn）／鉛（Pb）＝5/95合金
（融点300℃）を用いている。
そして、前記第一の半導体チツプ３の電極端子3bおよび
第二半導体チツプ４の電極端子4bは、電極端子3bの上に
電極端子4bを重ね合わせリフロー法により接続されてい
る。
前記リードフレーム５は、第１図の如く、前記電極端子
5aと前記第一の半導体チツプ３が取付けられる取付部5b
とから成り、該取付部5bに第一の半導体チツプ３がダン
ボンド剤11を用いて固定されている。
また前記電極端子5aおよび電極端子3cは、アルミニウム
線、金線等のボンデイングワイヤー12により電気的に接
続されている。
前記第一の半導体チツプ３の主面3aと第二の半導体チツ
プ４の主面4aとの界面に予め前記成形樹脂１以外の変形
防止樹脂13（液状熱硬化性樹脂）がデイスペンサー等に
より充填され、その後加熱炉等により硬化されている。
該液状熱硬化性樹脂13は、硬化前の特性として半導体チ
ツプ間に流動性よく流れ込むことが必要であり、硬化時
の特性として硬化後も界面を完全に充填する必要性から
無溶剤型の硬化収縮量の小さいものを選定する必要があ
る。また硬化後の特性として、ハンダバンプ８の接続部
の応力を最小にする必要から、熱膨張率がハンダ材料の
熱膨張率にほぼ等しいものが望ましく、かつ、その後の
樹脂成形工程の前記成形樹脂１の樹脂注入圧力に充分耐
え得る機械的物性を有するものを選定する必要がある。
このことは、成形樹脂注入時の応力による半導体チツプ
の変形に起因する損傷を防止する上で特に重要である。
このような条件を満足する樹脂として本実施例では、充
填剤を混入したエポキシ樹脂（例えば、XNR5008−１、
長瀬チバ株式会社製、住所：大阪市西区新町１丁目１番
17号）を採用している。
そして、上記半導体チツプ3,4は金型を用いて前記成形
樹脂１によりパケージングされ、リードフレームは所望
の形状に切断、成形される。
したがつて、本発明半導体装置の製造時には、まず、第
一の半導体チツプ３の電極端子3bの金属膜９と第二の半
導体チツプ４の電極端子4bの金属膜19をハンダバンプ８
を介して電気的に接続し、ハンダバンプ８に成形樹脂１
の充填時の温度に耐え得るようスズ（Sn）／鉛（Pb）＝
5/95合金を用いる。
次に、第一の半導体チツプ３の主面3aと第二の半導体チ
ツプ４の主面4aとの界面に、予め成形樹脂１以外の変形
防止樹脂13を充填する。なお、変形防止樹脂13の硬化後
の特性としては、ハンダバンプ８の接続部の応力を最小
にするため熱膨張率がハンダ材料の熱膨張率にほぼ等し
く、かつ、その後の樹脂成形工程の成形樹脂１の注入圧
力に充分耐え得る機械的物性を有するものを選定する。
上記の如く、第一の半導体チツプ３の主面3aと第二の半
導体チツプ４の主面4aとの界面に、成形樹脂１の樹脂成
形時の熱と樹脂充填圧力に耐え得る変形防止樹脂13を充
填することにより、成形樹脂充填時の熱や圧力等による
半導体チツプの変形に起因する素子特性の劣化を防止す
ることができるので、複数の半導体チツプを多端子接続
でき、半導体チツプの変形による素子特性の劣化なしに
樹脂成形パケージングができる。
なお、上記実施例においては、第一の半導体チツプ上に
別の一個の半導体チツプを接続した場合について述べた
が、第３図に示す第二実施例の如く、第一の半導体チツ
プ上に別の二個以上の半導体チツプ4,14を接続する場
合、あるいは、第４図に示す第三実施例の如く、第二の
半導体チツプの上に第三の半導体チツプ14を接続する場
合においても本発明が有効であることはいうまでもな
い。
また、第５図に示す第四実施例の如く、変形防止樹脂の
硬化性樹脂の硬化状態は、第一実施例のような気密状態
にするのではなく、成形樹脂の樹脂成形時の熱や樹脂充
填圧力に耐え得る程度の空隙15があっても良い。
なお、本発明は、上記実施例に限定されるものではな
く、本発明の範囲内で上記実施例に多くの修正および変
更を加え得ることは勿論である。
例えば、本実施例において、変形防止樹脂（熱硬化性樹
脂）としてエポキシ樹脂が使用されているが、この他に
も尿素樹脂、メラミン樹脂、フエノール樹脂を使用して
も良い。これらの熱硬化性樹脂は、一般に耐熱性、耐溶
剤性が良く、充填剤を入れて強靱な成形を得ることがで
きるものである。
〈発明の効果〉 以上の説明から明らかな通り、本発明によると、第一の
半導体チツプの主面上の電極端子と第二の半導体チツプ
の主面上の電極端子とがハンダを介して接続され、両半
導体チツプの主面の間の全部または大部分に、成形樹脂
の樹脂成形熱と樹脂充填圧力に耐え得る変形防止樹脂が
充填されている。
したがつて、変形防止樹脂が両半導体チツプ間の界面を
保護することにより、成形樹脂充填時の熱や圧力等によ
る半導体チツプの変形を起因する素子特性の劣化を防止
することができるので、複数の半導体チツプを多端子接
続でき、半導体チツプの変形による素子特性の劣化なし
に樹脂成形パケージングができるといつた優れた効果が
ある。
【図面の簡単な説明】
第１図は本発明第一実施例半導体装置の断面図、第２図
は同じくその要部拡大断面図、第３図は同じく第二実施
例の要部拡大断面図、第４図は同じく第三実施例の要部
拡大断面図、第５図は同じく第四実施例の要部拡大断面
図である。 1:成形樹脂、2:パツケージ、3:第一の半導体チツプ、3
a:主面、4:第二の半導体チツプ、4a:主面、5:リードフ
レーム、3b,3c,4b,5a:電極端子、13:熱硬化性樹脂。
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 25/07 25/18 (56)参考文献 特開 昭63−114241（ＪＰ，Ａ) 特開 昭58−10841（ＪＰ，Ａ) 特開 昭59−79561（ＪＰ，Ａ) 特開 昭58−154254（ＪＰ，Ａ)

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】成形樹脂により形成された単一のパツケー
    ジ内に複数個の半導体チツプとリードフレームとを有
    し、第一の半導体チツプの主面上の電極端子と第二の半
    導体チツプの主面上の電極端子とがハンダを介して接続
    され、両半導体チツプの主面の間の全部または大部分
    に、前記成形樹脂の樹脂成形熱と樹脂充填圧力に耐え得
    り、かつ前記成形樹脂とは異なる熱硬化性変形防止樹脂
    として、エポキシ樹脂、尿素樹脂、メラミン樹脂、フエ
    ノール樹脂から選択された一つの変形防止樹脂が充填さ
    れていることを特徴とする半導体装置。
JP63165551A 1988-07-01 1988-07-01 半導体装置 Expired - Fee Related JPH0750759B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP63165551A JPH0750759B2 (ja) 1988-07-01 1988-07-01 半導体装置
EP19890111856 EP0348972A3 (en) 1988-07-01 1989-06-29 A semiconductor device and a process for manufacturing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63165551A JPH0750759B2 (ja) 1988-07-01 1988-07-01 半導体装置

Publications (2)

Publication Number Publication Date
JPH0215660A JPH0215660A (ja) 1990-01-19
JPH0750759B2 true JPH0750759B2 (ja) 1995-05-31

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Country Link
EP (1) EP0348972A3 (ja)
JP (1) JPH0750759B2 (ja)

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US5060844A (en) * 1990-07-18 1991-10-29 International Business Machines Corporation Interconnection structure and test method
JPH04179263A (ja) * 1990-11-14 1992-06-25 Hitachi Ltd 樹脂封止型半導体装置とその製造方法
US5311401A (en) * 1991-07-09 1994-05-10 Hughes Aircraft Company Stacked chip assembly and manufacturing method therefor
JPH0574774A (ja) * 1991-09-12 1993-03-26 Nec Kyushu Ltd 樹脂封止型半導体装置
JPH05109977A (ja) * 1991-10-18 1993-04-30 Mitsubishi Electric Corp 半導体装置
US5274913A (en) * 1991-10-25 1994-01-04 International Business Machines Corporation Method of fabricating a reworkable module
KR100235108B1 (ko) * 1993-03-19 1999-12-15 윤종용 반도체 패키지
FR2709871B1 (fr) * 1993-09-06 1995-10-13 Commissariat Energie Atomique Procédé d'assemblage de composants par hybridation et collage.
US5583747A (en) * 1993-11-01 1996-12-10 Baird; John H. Thermoplastic interconnect for electronic device and method for making
US5506753A (en) * 1994-09-26 1996-04-09 International Business Machines Corporation Method and apparatus for a stress relieved electronic module
TW520816U (en) * 1995-04-24 2003-02-11 Matsushita Electric Ind Co Ltd Semiconductor device
KR100443484B1 (ko) * 1996-02-19 2004-09-18 마츠시타 덴끼 산교 가부시키가이샤 반도체장치및그제조방법
WO1997037374A2 (en) * 1996-03-26 1997-10-09 Advanced Micro Devices, Inc. Method of packaging multiple integrated circuit chips in a standard semiconductor device package
US6169329B1 (en) * 1996-04-02 2001-01-02 Micron Technology, Inc. Semiconductor devices having interconnections using standardized bonding locations and methods of designing
JP2845847B2 (ja) * 1996-11-12 1999-01-13 九州日本電気株式会社 半導体集積回路
DE69830883T2 (de) 1997-03-10 2006-04-20 Seiko Epson Corp. Halbleiterbauelement und mit diesem Bauelement bestückte Leiterplatte
JP2000012607A (ja) * 1998-05-28 2000-01-14 Xerox Corp 集積回路装置、及びフリップチップボンディングされたコンビネ―ションを作成する方法
KR100559664B1 (ko) * 2000-03-25 2006-03-10 앰코 테크놀로지 코리아 주식회사 반도체패키지
DE10300711B4 (de) * 2003-01-10 2007-10-04 Infineon Technologies Ag Verfahren zur Passivierung eines Halbleiterchipstapels
JP5481724B2 (ja) * 2009-12-24 2014-04-23 新光電気工業株式会社 半導体素子内蔵基板

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JPS5979561A (ja) * 1982-10-29 1984-05-08 Hitachi Ltd 半導体装置
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JPS63142663A (ja) * 1986-12-04 1988-06-15 Sharp Corp 半導体装置とその製造方法

Also Published As

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EP0348972A3 (en) 1990-09-19
EP0348972A2 (en) 1990-01-03

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