JPH07507360A - Improvement of magnet structure for planar magnetron sputtering - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] Improvement of magnet structure for planar magnetron sputtering The present invention generally Regarding the field of Gnetron sputtering, more specifically, plasma confinement magnetic field modified to increase sputter efficiency for low aspect ratio targets. The present invention also relates to a Brehner-type magnetron sputtering device.

A wide range of materials is used to deposit thin films of metallic or metallic materials onto the surface of an object or substrate. It is being This glow discharge sputtering process is typically performed in a vacuum chamber and It is carried out in the presence of a sputtering gas maintained at a relatively low pressure. Also, The material that is sputtered and deposited on the plate is generally called the target, and This is mounted on the cathode inside the vacuum chamber and shaped onto the surface of the target material. The generated plasma or glow discharge may erode it or cause sputtering. Ru.

The cathode and target are held at a strong negative potential, so the positive potential from the glow discharge The ions bombard the target material, causing the atoms of the target to be ejected. These types The target atoms then condense on the substrate surface, leaving a thin film or layer of target material on the substrate. forms a layer. Other particles and radiation are also present at the target and within the plasma. , which may affect the properties of the deposited film.

The sputtering rate, i.e. the number of target atoms sputtered per incident ion, is While it depends on the energy of the incident ions, the overall sputtering rate depends on the energy of the incident ions. depends on the total number of ions bombarding the target surface during a given time . Therefore, to maximize sputtering efficiency, the ions and current in the glow discharge must be It is desirable to generate and confine the particles as close to the surface of the target material as possible. . For this purpose, magnetron sputtering equipment became known. Many types have been developed, and some of them include magnetic fields or "tunnels". '' to confine the glow discharge near the surface of the target.

Most Brenna-type magnetron sputtering equipment is typically plate-shaped or plate-shaped. A Lena-type target generates a plasma confinement magnetic field adjacent to this target. together with a suitable magnetic structure for Plates of various shapes and configurations Zuma confinement fields have been developed and used with varying degrees of success, but they all have one thing in common: To apply a plasma confining magnetic field to the surface of the target material in a closed-loop ring or The shape is such that it forms a race track. When viewed in cross section, The target/cathode magnetic field loop or arc flux lines form a magnetic “tunnel”. The glow discharge is confined to an annular or racetrack-shaped sputter region. .

As is well known, the formation of high voltage between the anode and the target/cathode The electric field acts in combination with the closed-loop magnetic field to cause the electrons in the glow discharge to to obtain the net velocity along the race track. Ru. The magnitude and direction of the electron velocity vector are determined by the electric field vector E and magnetic field vector B. vector cross product (E (known as degrees). the dominant electron path The shape of defines the portion of target material to be sputtered.

However, conventional magnetron spacing with such an annular magnetic tunnel In most of the terminating equipment, an arc-shaped magnetic field on the target surface is an immediate There is a tendency to pinch. This pinching effect is caused by plasma Spatter density, and therefore sputter erosion, is highest along the centerline of the tunnel. It becomes the cause. As the target is gradually eroded, the pinching mosquito They tend to be more powerful, which leads to even more binning and ultimately to the target. This results in the formation of V-shaped erosion grooves on the edges. The bottom of the V-shaped erosion groove is the target. The percentage of target material that is removed by sputtering before reaching the backside of the target. This is called target utilization. subordinate Most prior art sputter magnetrons have relatively low target utilization. The range is approximately 20% to 30%. Commonly used target materials are often relatively expensive, so such low target utilization is wasteful; This will increase the cost associated with the sputter process. For example, Even if the target is recycled and reprocessed into a new target, the target The time spent replacing and reworking can be very long, and in any case This also increases the overall cost of the sputter process. Therefore, the target If utilization is high (if so, production run time will be lengthened) downtime spent reprocessing and replacing targets. Significant increase in target usage as the wntime) can be reduced This will directly lead to cost savings.

Over the years, inventors have discovered that by changing the shape of the plasma confining magnetic field, , attempts to increase the target utilization associated with such Brehner-type magnetrons. It's here. For example, Morrison, U.S. Patent No. 4,180,450 In an attempt to reduce the above-mentioned plasma binning effect, A Brehner-type magneto that flattens the curved lines of magnetic force that form the convex arch of the tunnel. Ron is disclosed. US special edition issued to Macl, eod No. 3,956,093 discloses that by enlarging the sputter area on the target, , Ikura is increasing target utilization. The massocreode is used in the sputter region. Electromagnets are used to create a variable bias magnetic field (variable magnet bias field), which would otherwise be a static magnetic field. This was applied to oscillate the magnetic field above the center of the erosion groove. Also, For pond magnetron equipment, the entire magnet structure or tarp can be sputter-produced. Some have expanded the eroded area by physically moving it during the process.

Although these prior art devices described above have improved target utilization to some extent, Improvements often come at the cost of reduced power efficiency, or separate or additional components to physically move the magnet structure or target. This required the addition of electromagnetic coils or complicated equipment. this is a spa In addition to increasing the overall cost of the sputtering equipment, the large number of components in the sputtering chamber By adding If proper care is not taken to ensure that the coated membrane is exposed to undesirable There is a possibility of contamination with pure substances.

Welty, in U.S. Pat. No. 4,892,633, describes the use of magnetic fields or Don't rely on complicated equipment to make any of your targets vibrate. We have discovered another way to increase port utilization, with all the drawbacks that come with it. specifically Welty describes a method and apparatus for magnetron sputtering. Some of the magnetic flux lines forming the closed-loop magnetic tunnel in the data region change from convex to He taught us to change the curve to a slightly concave shape. Welty's magnetic field shape This improvement reduces the binning effect and cleans the target material more completely. It became possible to remove the yellow color. Unfortunately, however, Welty's system Stems are not without their drawbacks either. For example, the magnetic shunt (ma magneticshunt) pulls down the magnetic field lines on the surface of the target and The bend changes from convex to slightly concave, but this also greatly increases the magnetic field strength. This will weaken it. This weakened magnetic field causes the target to Since the large tolerance thickness is reduced, production run time is of course reduced and target replacement costs are reduced. Increased downtime. An alternative to this is to use a stronger magnet and It is also possible to compensate for the reduced magnetic field strength. However, unfortunately In particular, most sputtering magnetrons already use the strongest magnets available. This option is effectively ruled out.

Therefore, separate electromagnets or other complex devices may be added to direct the magnetic field onto the surface of the target. (and without the need to move the target itself) Improved Brener-type magnetron sputtering that achieves significant improvement in resource utilization. A need remains for a ring device. Ideally, a Brenna type like this Magnetrons use a simple static tunnel magnetic field, but the strength of the magnetic tunnel is weakened. without unduly limiting the maximum allowable thickness of the target material, Target utilization increases should be achieved. Prior to the present invention, such equipment The location does not exist.

Disclosure of invention Accordingly, it is a general object of the present invention to provide a magnetron with improved target utilization. An object of the present invention is to provide a sputtering device.

Another general object of the invention is to provide target materials with low aspect ratios and large thicknesses. By providing improved magnetron sputtering equipment that can utilize be.

A more specific object of the present invention is to solve the problem of plasma pinch associated with prior art magnetrons. Brainer-type magneto with improved magnetic field shape to reduce ringing effects To provide Ron sputtering equipment.

Yet another more specific object of the invention is to reduce plasma binning effects. is a device for oscillating a magnetic field on the surface of the target or the target itself. Bräner-type machining with an improved magnetic field shape that eliminates the need to rely on oscillating An object of the present invention is to provide a gnetron sputtering device.

In order to achieve the above and other objects, and according to the objects of the present invention, here: The Brehner-type magnet improved by the present invention, as embodied and broadly described in The magnet structure for TRON sputtering is placed adjacent to the backside of the target and Adjacent to the front face of the target and within the target body, lines of magnetic flux define the sputter region. A sputtering magnet structure is provided for generating a magnetic field having . The magnetic flux lines are above magnetic lobe, lower magnetic lobe, inner magnetic lobe and outer magnetic lobe all of which are located substantially within the sputter region. Furthermore, the magnetic The strength and orientation of the lobes are determined by the presence of a zero point between the upper, lower, inner and outer magnetic lobes. make it exist. During sppacking, when the target material is sputtered away and the magnetic lobes are upper, lower, inner and outer closed-loop plasma, respectively. Forms a confinement magnetic tunnel.

Sputter to generate four separate closed loop plasma confinement magnetic tunnels A basic embodiment of the magnet structure comprises plate-like pole pieces made of magnetically permeable material. center A magnet is placed substantially in the center of said pole piece, and its N (north)-8 (south) magnetic orientation is It is oriented substantially perpendicular to the plate-like pole piece. Around this central magnet , a plurality of outer magnets are arranged. Each of these is also perpendicular to the pole pieces, but , has an N-3 magnetic orientation opposite to the orientation of the central magnet. Also, multiple main inner Magnets are placed around the central magnet and between the central magnet and the outer magnets. These main inner magnets Each of the stones is parallel to the base pole piece and in the magnetic direction of the central and outer magnets. It has an N-3 magnetic orientation perpendicular to the magnetic field.

The method of the present invention includes the steps of setting a low-pressure sputtering environment in a sputtering chamber; A sputtering device that creates a glow discharge in the sputtering area on a target placed in a sputtering chamber. Including step. next, adjacent to the front surface of the target and the target body; A magnetic field having multiple lines of magnetic flux is formed within the magnetic field. These lines of magnetic flux are the upper magnetic lobe, forming a lower magnetic lobe, an inner magnetic lobe and an outer magnetic lobe. These are all , located substantially within the sputter region and target body. These magnetic rows Be present.

Further objects, advantages and novel features of the present invention are set forth in part in the detailed description below. or which will be partially apparent to a person skilled in the art upon perusal of the following: Alternatively, it may be acquired by implementing the present invention. Objects and advantages of the invention by means of the above and specifically pointed out in the appended claims. It can be realized and achieved by working together.

Brief description of the drawing The accompanying drawings, which are incorporated herein and constitute a part of the specification, illustrate preferred embodiments of the invention. and, together with the detailed description, serve to provide a detailed explanation of the invention. . In the drawing, Figure 1 shows the magnet structure for the Brehner type magnetron sputtering improved according to the present invention. 2 is a schematic cross-sectional elevational view of a first embodiment of the structure taken along line 1-1 of FIG. 2, with the target The position of the magnet relative to the magnet structure, and the arrangement of the permanent magnet and the N-3 magnetic orientation (no. rth-south field orientation).

Figure 2 shows the entire magnet structure for Brehner type magnetron sputtering shown in Figure 1. FIG.

Figure 3 shows the improved Brener-type magnetron sputtering magnet structure shown in Figure 1. FIG. 3 is a schematic cross-sectional elevation view of a first embodiment of the structure, showing four lobes for the target; This figure shows the direction and shape of the magnetic flux lines of the magnetic field.

Figure 4 shows the improved Brehner-type magnetron sputter shown in Figures 1 and 3. 1 is a schematic cross-sectional elevational view of a first embodiment of a magnet structure for a target, and the inside of the target is eroded. This shows a typical erosion groove.

Figure 5 shows the improved Brehner-type magnetron sputtering magnet structure according to the present invention. target voltage versus target with a typical prior art Brehner type magnetron. This is a plot comparing cut usage.

Figure 6 shows the improved Brehner-type magnetron sputtering magnet structure according to the present invention. Figure 3 is a schematic cross-sectional elevational view of a second embodiment of the body;

FIG. 7 shows the improved Brener-type magnetron spacing according to the present invention shown in FIG. FIG. 2 is a schematic cross-sectional elevational view of a second embodiment of a magnet structure for a target; 2 shows the corresponding orientation and shape of the magnetic flux lines of a magnetic field with four lobes.

FIG. 8 shows a third embodiment of the improved Brehner-type magnetron sputtering structure. FIG. 2 is a schematic cross-sectional elevational view.

FIG. 9 shows a fourth embodiment of the improved Brehner-type magnetron sputtering structure. FIG. 2 is a schematic cross-sectional elevational view.

Figure v, 10 shows the fifth implementation of the improved Brehner-type magnetron sputtering structure. FIG. 2 is a schematic cross-sectional elevation view of an example;

FIG. 11 shows a sixth embodiment of the improved Brener type magnetron sputtering structure. FIG.

Fig. 12 shows a seventh embodiment of the improved Brehner-type magnetron sputtering structure. FIG.

FIG. 13 shows a rectangular planar magnetron sputtering magnet structure according to the present invention. FIG.

FIG. 14 is a schematic cross-sectional elevational view taken along line 14--14 of FIG. 13, showing the magnet structure; Position of the target relative to the elongated central part of the body, and placement of the permanent magnet and N-3 magnetic field Indicates force position.

Figure 15 shows the second example of the improved rectangular planar magnetron sputtering structure. FIG. 2 is a schematic cross-sectional elevational view of the example.

Figure 16 shows the third example of the improved rectangular planar magnetron sputtering structure. FIG. 2 is a schematic cross-sectional elevational view of the example.

Figure 17 shows the fourth example of the improved rectangular planar magnetron sputtering structure. FIG. 2 is a schematic cross-sectional elevational view of the example.

Figure 18 shows the fifth example of the improved rectangular planar magnetron sputtering structure. FIG. 2 is a schematic cross-sectional elevation view of the example, showing the configuration of the central booster magnet and target. It is something.

BEST MODE FOR CARRYING OUT THE INVENTION The improved Brehner-type magnetron sputtering magnet structure according to the present invention is as follows: Depending on the specific target geometry and desired erosion pattern, as detailed in can be arranged in different configurations, and can be shaped like a flat circular or rectangular plate. Can be used with targets. For example, eroding a circular target plate A round or circular magnetron is a plasma confinement magnetron with concentric circular rings. The shape of each magnetic tunnel for rectangular targets is similar to that for rectangular targets. extending along most of the length of the Continuous loops of flat oval or “racetrack” shape, joined by shape sections. It includes two linear parts that form a loop. Therefore, here, the improvement according to the present invention will be described. The magnetron sputtering magnet structure is either round or rectangular. shall be configured for use with a target having a ramp ohm. to show and explain. Finally, a vacuum chamber is used to mount and cool the target. equipment for electrically connecting the target cathode to a voltage source, etc. The configuration of the pond necessary to configure and operate the magnetron sputtering equipment Such other components are not discussed herein as the elementary details are known to those skilled in the art. It is not shown or described. Additionally, surround the magnet structure with a suitable ground shield. This prevents unwanted spatter of the magnet structure and prevents arcing. The need will also be recognized by those skilled in the art.

In short, the improved Brehner-type magnetron sputtering magnet according to the present invention A preferred embodiment 10 of the structure includes a flat magnet disposed on the sputtering magnet structure 10. Four concentric closed-loop magnetic tunnels are emitted on the front surface 13 of the circular target 12. It can best be seen in Figs. 1-3 as a configuration in which the

Essentially, the sputter magnet structure 10, as best seen in FIG. A plurality of permanent magnets with respective N-S magnetic orientations are placed in various horizontal and vertical directions. A base pole piece 14 is provided arranged and mounted in an arrangement. Combined with magnetic The magnets and pace pole pieces 14 forming the stone structure 10 have four lobes. Generates a unique magnetic field. Each of the four lobes 32, 34, 36 and 38 As best shown in the figure, it substantially defines the sputter area. Ru.

During the actual sputtering process, each of the magnetic lobes 32, 34, 36 and 38 is closed-loop plasma confinement magnetic tunnels, and each tunnel As the target material is gradually eroded away, it gives the plasma a more pronounced effect. , thus exposing more of the magnetic flux lines associated with each individual lobe. That will happen. As will be explained in more detail below, this four-lobed plasma The magnetic confinement field configuration and the placement of the magnets to generate it are important features of the invention. When the glow discharge erodes and removes the target material 12, the glow This keeps the discharge density substantially uniform. Glow in sputter area By increasing the uniformity of the discharge, the target utilization of the present invention is greatly improved. That will happen.

Another important feature of the invention is that it is used to shape the magnetic field and improve the uniformity of the glow discharge. It does not require a shunt to weaken the magnetic field. follow Therefore, the sputtering magnet structure according to the present invention is similar to the prior art device with the same target utilization. The aspect ratio of the main frame is approximately 15:1, while the aspect ratio of approximately 9.1 or less For use with a relatively thick target 12 that has a diameter-to-thickness ratio. I can do it. Target aspect ratio can be reduced, allowing thicker targets to be can be used to sputter production runs using a given target. The time can be extended, and target recycling and target It is also possible to shorten the downtime associated with replacement. Furthermore, the present invention uses a simple static magnetic field. moving the magnetic field relative to the target to increase target utilization. It does not require any complicated equipment to carry out the process, and there are no disadvantages associated therewith. as a result , an inert insulating material such as epoxy is applied throughout the sputtering magnet structure according to the present invention. coating, the sputtering magnet structure can be immersed in water or other coolant. In such cases, it can be protected from corrosion.

Preferred embodiments of the improved planar magnetron sputtering magnet structure of the present invention The details can best be seen in FIGS. 1, 2 and 3. magnet The structure 10 is for sputtering a plate-like target having a circular planform. It is specifically constructed to generate a circular magnetic field of , best seen in Figure 2. A plurality of circularly arranged pole pieces concentric with the axis of symmetry 18 of the circular pace pole piece 14 so as to Contains individual magnets. Referring now to FIGS. 1 and 2 simultaneously, the magnet structure 10 has a circular planform and is made of magnetically permeable material such as iron or nickel. includes a base pole piece 14 with The base pole piece 14 is an integral central or inner pace gear. including a knob 40 and an outer pace gap 42, the gaps having a four-lobe shape. This strengthens the shape of the magnetic field, which will be discussed in detail later. In Figure 1 As can be seen, a single cylindrical central magnet 16 is placed concentrically with the axis of symmetry 18 with the base pole It is mounted in the center of the pole piece 14 and oriented such that the north pole is adjacent to the pole piece 14. Second As best seen in the figure, a plurality of main inner horizontal magnets 2o are arranged around the central magnet 16. , also arranged concentrically with the axis 18 , with an annular central or inner pole piece 22 . It is separated from stone 16. As will be discussed in more detail later, optionally multiple side-inside horizontal magnetic A stone 24 is attached to the main inner horizontal magnet 20 to increase the magnetic field strength and to increase its shape. It may be slightly deformed. This is necessary for larger diameter targets. There are cases. Finally, a plurality of outer vertical magnets 26 are attached to the outer periphery of the base pole piece 14. attached, a plurality of outer horizontal magnets 28, an annular outer pole piece 3o and an outer vertical gap 44. Therefore, the inner side magnet 24 is separated.

In the preferred embodiment, magnets 16.20, 22.24.26, and 28 have a diameter of about 35 meg. Magnetic field energy product (magnetic) larger than Ouss-Oersted (MGOe) rare earth neodymium iron with field energy products) It is a boron (NdFeB) magnet.

However, other types of rare earths such as samarium cobalt (SmCo) magnets Even if it is replaced with a similar magnet, the same effect can be obtained. Also, barium blowjob A magnet of about 3.5 MGOe, such as a strontium ferrite magnet or a strontium ferrite magnet. Replacing the outer horizontal magnet 28 with a ceramic magnet having a field energy product also works well. I am getting good results.

Magnet 16.20 of the improved sputtering magnet structure 1o shown in FIGS. 1 and 2 ．． 22.24.26 and 28, annular pole pieces 22 and 3o, and gear teeth 4o, 4 The above-described specific configuration of 2 and 44 is similar to that of 4-4 with magnetic flux lines as shown in FIG. Generates a lobe magnetic field. Here, the magnetic flux lines shown in both Fig. 3 and Fig. 7 are drawn as follows. Finite element computers of the type that are readily commercially available and known to those skilled in the art. This was done using a modeling program. The spacing between magnetic flux lines is the magnetic flux density, or magnetic field strength. is proportional to. The narrower the line spacing, the stronger the magnetic field. Magnet itself and magnetic permeability The magnetic flux lines inside the pole pieces are not shown for clarity.

Returning now to FIG. 3, the magnetic field created by the magnet structure 10 four separate lobes located around or within the material 12, namely the upper lobes; 32, characterized by the presence of an inner lobe 34, an outer lobe 36 and a lower lobe 38 There is. As previously mentioned, each of the lobes 32, 34, 36 and 38 are Separate closed-loop plasma confinement magnetic tunnel during the actual sputtering process form. Therefore, these four lobes 32, 34, 36 and 38 are essentially Define the sputter region, ie, the volume of the target where sputtering occurs. This 4- Another interesting feature of the lobe-shaped magnetic field is the sputter region surrounded by these four lobes. There is a zero point 31 within the range. This point 31 is magnetic in space. This is the point where the sum of the flux densities becomes zero. In the embodiment shown in FIG. 1, the zero point 31 is approximately equidistant from the bending point of each magnetic lobe, as best seen in Figure 3. .

The existence of this cello point 31 itself is not necessary to achieve the purpose of the present invention. This should be noted. Rather, the existence of zero point 31 is due to the presence of four magnetic low points. 32.3, 1.36 and 38, and their existence is the real thing. It is necessary to achieve the purpose of the invention. Therefore, the cello point 31 has four magnetic defining the air lobes 32, 34, 36 and 38, in particular the strength and manner of these lobes; It serves as an alternative way to define the position. In other words, each magnetic The net magnetic flux density of the tubes 32, 34, 36 and 38 is zero at the zero point 31. It is something like that. Essentially, the three lobes 34, 36 and 38 are target in a manner similar to single-closed loop magnetic tunnels known in the art. The electrons in the glow discharge are confined in the upper part of the plate 12, that is, in the vicinity of the front surface 13. death However, advantageously, each lobe 34, 36 and 38 is individually closed loop magnetic Forming a tunnel, the resulting orifice directly above the front surface 13 of the target - Discharge density is much higher than that possible with conventional single-loop magnetic tunneling. evenly distributed. As a result, the sputter erosion rate also increases on the surface 13 of the target. As a result, very wide and flat erosion grooves 46 shown in FIG. 4 are obtained. Ru.

This erosion groove 46 that can be obtained with the present invention is similar to that of the conventional planar magnet. It is significantly wider and flatter than the erosion groove caused by erosion, and is 15.9 mm thick (0.6 mm It corresponds to a target utilization rate of about 50% for a target of 25 inches). Ru.

A typical prior art planar mag for a target of the same thickness. Target usage rate is only about 25% compared to sputtering with Netron. It is.

Electrical impedance in sputtering processes as a result of improved glow discharge uniformity is very stable over the lifetime of the target 12, which makes it more predictable and A uniform coating can be applied to the substrate (not shown). In other words, The target voltage required to achieve a uniform sputtering rate over the lifetime of target 12 is The pressure is represented by curve 48 in FIG. It is significantly flatter than is possible with planar magnetrons. Furthermore, this As can be seen in Figure 5, as a result of improved target utilization, the The indicated target life was significantly extended.

As explained briefly above, the overall shape of the magnetic field as well as the individual lobes 32 of the magnetic field ．． 34. Each shape of 36 and 38 has a different magnet arrangement and spacing between the magnets. and by adding or removing gaps 4o, 42 and 44. It can be changed by changing its shape. for example, The inner pace gap 40 and the main and side inner horizontal magnets 2o and 24 are respectively , forming an upper lobe 32, an inner lower lobe 34 and an intermediate lower lobe 38 of the magnetic field. Ru.

The inner lobe 34 directs electrons in the glow discharge near the inner portion of the erosion groove 46 (FIG. 3). Its presence is critical to the performance of the magnetic structure according to the invention, as it displaces and confines it. is essential and therefore of primary concern in improving target utilization.

Similarly, the outer pace gap 42, the outer horizontal magnet 28, and the annular outer pole piece 30 are It primarily affects the shape and position of the outer lobe 36. This lobe is a glow discharge to help move and confine electrons within towards the outer portion of the erosion groove 46. Ru.

The shape and position of the lobes 32, 34, 36 and 38 are similar to that of any of the above magnets, i.e. By changing the combination and position of the side horizontal magnets 24 and the outer horizontal magnets 28, So, you can change it. For example, the second embodiment 110 of the magnet structure for sputtering As shown in FIG. 6, the outer horizontal magnet 28, annular pole piece 30 and outer pace gap 42 can be constructed by removing the top 42. Therefore, essentially This second embodiment of the magnet structure has a pace for holding the cylindrical central magnet 116. It consists of a pole piece 114. Main and sub inner horizontal magnets 120 and 124, Each is mounted around a central magnet 116 concentrically with the shaft 118 and has an annular inner pole. It is separated from the central magnet 116 by a piece 122. Best seen in Figure 7. The center page located directly below the main and side inner horizontal magnets 120 and 124 The spacing gap 140 includes an upper lobe 132, an inner intermediate lobe 134, and an intermediate lower lobe. The shape of the tube 138 is strengthened. The outer horizontal magnet 28 and the outer pace gap 42 Removal primarily changes the shape and position of outer lobe 136. just However, to a lesser extent, the shape and position of the pond lobes 132, 134 and 138 are also affected. , influence.

Furthermore, pond embodiments are also possible. For example, a third embodiment of the magnet structure is shown in FIG. . This third embodiment 210 represents the simplest embodiment of the invention, with the pole piece 214 A central magnet 216 is arranged around this central magnet 216 (except for the L-shaped annular pole piece 22). It consists only of a plurality of main inner horizontal magnets 220 and a plurality of outer vertical magnets 226.

This magnet structure 210 also produces a four-lobe magnetic field structure, but is The target outline is not optimized to obtain maximum target utilization.

The main advantage of this third embodiment 210 is simplicity.

In order to improve the magnetic stability of the central magnet and the main inner horizontal magnet, the The fourth embodiment 310 has a sandwich between the south pole of the main inner horizontal magnet 320 and the center magnet 316. including an annular inner pole piece 322 . In fact, everything used in the various examples above The main purpose of the pole piece is to improve the magnetic stability of various magnets and to This is to prevent them from being demagnetized by heat and high temperature sputtering environments. this The fourth embodiment also utilizes an outer vertical magnet 326, but the base pole piece 314 has a gear Has no Janob. Figure 0 shows the fifth embodiment 410 of the magnet structure according to the present invention. Shown below. This is an inner pace gap 440 that extends below the main inner horizontal magnet 410. By adding , target utilization is improved.

Finally, the sixth and seventh embodiments 510 and 610 are shown in FIGS. 11 and 12, respectively. As shown in the figure. These also change the four-lobe magnetic field and change the shape of the outer lower lobe 36. By strengthening, target utilization is improved and outside of the erosion groove 46 (Fig. 3) Helps confine electrons to the surrounding area. Essentially, the sixth embodiment 510 includes a plurality of outer A horizontal magnet 528 is added to the embodiment shown in FIG. Shown in Figure 12 The seventh embodiment 610 includes an annular outer magnet between an outer vertical magnet 626 and an outer horizontal magnet 628. includes a side pole piece 630 and a gap 644 and further extends below the outer horizontal magnet 628. By including an outer pace gap 642, the embodiment shown in FIG. or changed. As a result, the configuration of the seventh embodiment 610 shown in FIG. The shape of the outer lobe 36 is further strengthened than the embodiment 510 shown in FIG. This will further improve the usage rate of get.

The sputtering magnet structure according to the present invention has a rectangular target, which is different from a circular target. It can also be configured to be used as a rectangular cut. The shape of each magnetic tunnel to the target includes two parallel straight sections. child They extend along most of the length of the rectangular target in spaced relation and are located inside the hand. Continuous magnetic loops in flat oval or racetrack shape, joined at each end by minutes form a group. Similar to the circular magnetron above, this rectangular magnetron also With a 4-lobe magnetic field, there are four separate plasma confinement magnetic tunnels. Ru.

A sputtering magnet structure 710 for use with a rectangular target is shown in FIGS. This can be best understood by simultaneously referring to Figure 14. essence Specifically, the sputtering magnet structure 710 supports semicircular and linear magnet structures. It consists of a flat elliptical base pole piece 714, which is a racetrack-shaped 4-pole piece 714. Generates a lobe-shaped magnetic field. More specifically, each semicircular end 71 of the base pole piece 714 5 is the same as that of the first embodiment 10 shown in FIG. A cylindrical central magnet 716 surrounded by 2 and a plurality of main and side inner horizontal magnets. 720.724 respectively. A plurality of outer vertical magnets 726 are connected to the base pole piece 71. 64 around each semicircular end 715. a plurality of outer horizontal magnets 728; It is arranged between the inner horizontal magnet 7211 and the outer vertical magnet 726, and the pole piece 730 and the outer It is separated from the outer vertical magnet 726 by a side gap 744 . inner pace A gear knob 740 extends below the main and side inner horizontal magnets 720 and 724. Additionally, an outer pace gap 742 extends below outer horizontal magnet 728 .

The configuration of the elongated rectangular central portion 715' separating the two semicircular ends 715 is such that each semicircular Similar to the end configuration, but the magnets, pole pieces and gaps in the center section are The only difference is that it is arranged in a straight line. Now refer to Figure 14. illuminate The central portion 715′ includes each cylindrical portion within the semicircular end portion 715 of the base pole piece 714. Includes an elongated central magnet 716' extending between central magnets 716. two elongated no. 1 horizontal magnet 720' is placed on each side of the central magnet 716', and the elongated inner pole piece 72' It is separated from them by 2°. Two outer vertical magnets 726゛ in the center part 715゛ and each outer horizontal magnet 728゜ and outer pole piece 730゜. are separated from each first horizontal magnet 720. As in the case of a circular magnetron, An inner pace gear 740' extends below each first horizontal magnet 720' and extends in each semicircle. End 714 mates with inner pace cap 740 . Similarly, the two outer A pace gap 742' extends below each outer horizontal magnet 728' and extends between each semicircular end 742'. 1.1, it joins the outer pace gap 742.

Essentially, the elongated central portion 714' "pulls" the magnetic field between the two semicircular ends 714. "extended" and has substantially the same cross-section at all 7a points on the race trunk. form a closed loop four-lobe magnetic lace trunk. The circular magnet mentioned earlier As in the case of Tron, the cross-section of the race-trunk magnetic field contains four lobes, so , the uniformity of the glow discharge and thus the target utilization can be increased.

Again, as in the case of a circular magnetron, a rectangular or racetrack shape according to the invention Magnetrons can be configured in a variety of different ways to target specific targets and desired speeds. The four lobes of the magnetic field can be optimized to the putter conditions.

For example, a second embodiment 810 of a rectangular sputtering apparatus according to the present invention is shown in FIG. show. This embodiment 810 has a gap 840° extending from below the main inner magnet 820'. The first embodiment except that it covers the entire area up to the side horizontal magnet 828゛. It is similar to 710. As with the circular magnetron, this gear with an 840゛ gear The configuration can be divided into 4 depending on the need to optimize sputter rate for a given target. - It changes the position of the lobe-shaped magnetic field. The third embodiment 910 has a magnet 92 The pole pieces for 0° and 928° are now an integral part of the base pole piece 914. Except for this, this embodiment is substantially the same as the second embodiment.

A fourth embodiment 1010 of a rectangular magnetron is shown in FIG. This is the outer horizontal magnet The structure of the magnet structure is thereby simplified. this The fourth embodiment 1010 has a booster center magnet 1 positioned above the center magnet 1116'. 117° to form the fifth embodiment 1110 shown in FIG. It can also be done. This booster magnet 1117' increases the magnetic field strength and This makes it possible to use even a thick target of 12 degrees. Preferably thicker tape Cut out the center part of the target 12° to provide play for the booster magnet 1117'. At the same time, it is possible to bring the upper surface 13' of the target 12' closer to the magnetic field. It should be possible to do so.

This concludes the discussion of various embodiments of the present invention as well as circular and rectangular Brehner magnetrons. - Finish the detailed explanation of the special configuration of the sputtering equipment. According to the present invention The components of the Brehner-type magnetron sputtering system can be arranged in many ways. Now that we are familiar with the details of the present invention, it is clear that the main purpose of the sputtering magnet structure is to After understanding that it produces a shaped magnetic field, there are many other things not shown or mentioned here. It is noted that configurations are also possible and obvious to those skilled in the art. example For example, the magnets included in the embodiments shown and described herein are all N-8 magnets, indicated by the N-5 arrow. Although the magnetic field orientation is optional, the markings indicating the magnetic field orientation are optional and may be used for a given example. In order to It may also be possible, but this will be obvious to those skilled in the art. Also, circular and rectangular Although a variety of different embodiments have been shown for the shaped magnetron, the This embodiment can also be used with other shapes. That is, circular brainer type magnetro The configuration of the given example for a rectangular brainer type magnetron can easily be used for and vice versa.

What has been described above is considered merely illustrative of the principles of the invention. Furthermore, numerous modifications The same structure and modifications as shown and explained above are easy for those skilled in the art. There is no desire to limit the invention to the operation thereof. Therefore, all suitable modifications Products and equivalents that fall within the scope of the invention as defined in the claims below. It is.

○ Too 200 Boo 400 KW-Target Usage time FIG 5 FIG.6 FIG.8 FIG. 10 FIG, 1l FIG. 12 Continuation of front page (81) Designated countries EP (AT, BE, CH, DE.

DK, ES, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE) , AT, AU, BR, CA, CH, CZ, DE, DK, ES, GB, H U, JP, KP, KR, LU, NL, No, NZ, PL, PT, RU.

SE, U.A.

Claims (11)

[Claims] 1. A magnetron sputtering cathode for sputtering a target. , the target has a front surface, a main body and a back surface, and defines one plane. a generally plate-shaped pole piece made of a magnetically permeable material, and a pole piece disposed on the pole piece. a first magnet having an N-S magnetic orientation substantially perpendicular to the plane; disposed on the pole piece at a distance from the first magnet, substantially in the plane; has an N-S magnetic orientation that is perpendicular to the magnet and substantially opposite to the magnetic orientation of the first magnet. a second magnet, and between the first magnet and the second magnet on the pole piece; adjacent to said second magnet and located at a considerable distance from said second magnet; substantially parallel and substantially perpendicular to the N-S direction of the first magnet and the second magnet. a third magnet having a straight N-S magnetic orientation; Magnets are spaced apart adjacent the front surface of the target and within the target body. generating a magnetic field having a plurality of magnetic flux lines defining a sputtered region; The magnetic flux lines are an upper magnetic lobe, a lower magnetic lobe, an inner magnetic lobe, and an outer magnetic lobe. magnetic lobes, and all of these magnetic lobes are located substantially within the sputtered region. , and such that the zero point exists between the upper, lower, inner and outer magnetic ropes. have different strengths and orientations, such that each of the magnetic lobes forms a distinct plasma closure. A cathode for magnetron sputtering characterized by forming a magnetic tunnel. . 2. 2. The magnetron sputtering cathode of claim 1, wherein the magnetron sputtering cathode comprises a magnetron sputtering cathode on the pole piece. between the second magnet and the third magnet, adjacent to the second magnet and close to the third magnet; are spaced a considerable distance apart, substantially parallel to said plane and said first having an N-S magnetic orientation substantially perpendicular to the N-S orientation of the magnet and the second magnet. A cathode for magnetron sputtering, comprising a fourth magnet. 3. 3. The magnetron sputtering cathode of claim 2, wherein the magnetron sputtering cathode has a between the third magnet and the fourth magnet, adjacent to the third magnet and close to the fourth magnet; are spaced a considerable distance apart, substantially parallel to said plane and said first having an N-S magnetic orientation substantially perpendicular to the N-S orientation of the magnet and the second magnet. A cathode for magnetron sputtering, comprising a fifth magnet. 4. 4. The magnetron sputtering cathode according to claim 3, wherein the first magnet and the front A magnetron comprising a first pole piece disposed between the third magnet and the third magnet. Cathode for sputtering. 5. 5. The magnetron sputtering cathode according to claim 4, wherein the fourth magnet and the front A magnetron comprising: a second pole piece disposed between the second magnet; Cathode for sputtering. 6. 6. The magnetron sputtering cathode according to claim 5, wherein the pole piece is A first gear located below the third magnet and extending halfway toward the fourth magnet. 1. A cathode for magnetron sputtering, characterized by comprising a drop. 7. 7. The magnetron sputtering cathode according to claim 6, wherein the pole piece is located below the fourth magnet and extending halfway toward the third magnet; including a second gap that does not extend toward the first gap. Cathode for magnetron sputtering. 8. 8. The magnetron sputtering cathode according to claim 7, wherein on the first magnet arranged substantially perpendicular to the plane and substantially aligned with the magnetic orientation of the first magnet; A magnetron characterized in that it includes a sixth magnet having an N-S magnetic orientation. Cathode for sputtering. 9. A glow discharge sputtering method that uses a low-pressure sputtering environment in a sputtering chamber. a step of setting a front surface, a main body and a back surface arranged in the sputtering chamber; forming a glow discharge in a sputtering area on a sputtering target; a plurality of magnetic flux lines adjacent to the front surface of the target and within the target body; generating a magnetic field having an upper magnetic lobe, a lower magnetic lobe, and a lower magnetic field; form a magnetic rope, an inner magnetic lobe and an outer magnetic lobe, and located substantially within the sputter region and the target body, and The intensity and such that each of said magnetic field lobes forms a separate plasma closure. a glow discharge sputtering method comprising the steps of forming an embedded magnetic tunnel; method. 10. In planar magnetron sputtering equipment, the target is sputtered. A magnet structure for sputtering, wherein the target includes a front surface, a main body, and a back surface. , the magnet structure is disposed adjacent to a back surface of the target, and the magnet structure is defining a sputter area adjacent the front surface of the target and within the target body; generates a magnetic field having a plurality of magnetic flux lines defining an upper magnetic lobe, a lower magnetic flux line, and a lower magnetic lobe. forming a magnetic lobe, an inner magnetic lobe and an outer magnetic lobe; all located substantially within the sputter region and the target body, and The intensity and intensity are such that there is a zero point between the upper, lower, inner and outer magnetic lobes. so that the upper, lower, inner and outer magnetic form upper, lower, inner and outer plasma confinement magnetic tunnels. A magnetic structure characterized by. 11. Planar magnetron sputtering magnet for sputtering targets a stone structure, wherein the target has a front surface, a main body and a back surface, and the target has a front surface, a main body and a back surface; A magnetic structure for magnetron sputtering is adjacent to the back surface of the target. and adjacent to the front surface of the target and adjacent to the target body. generates a plurality of magnetic flux lines that define a sputter region within the upper magnetic roller; a lower magnetic rope, an inner magnetic lobe and an outer magnetic lobe; and the magnetic flux lines of the lower magnetic lobes are each substantially parallel to the back surface of the target. has a cross section characterized by upper and lower inflection points with upper and lower tangents. and the magnetic flux lines of the inner and outer magnetic ropes are substantially located on the back surface of the target. characterized by each medial and lateral inflection point with each medial and lateral tangent perpendicular to the upper, lower, inner and outer lobes each have a cross-section of Features: upper, lower, inner and outer plasma confinement forming magnetic tunnel Magnet structure for planar magnetron sputtering.