JPH0746436B2 - Driving device for semiconductor laser - Google Patents
Driving device for semiconductor laserInfo
- Publication number
- JPH0746436B2 JPH0746436B2 JP60296739A JP29673985A JPH0746436B2 JP H0746436 B2 JPH0746436 B2 JP H0746436B2 JP 60296739 A JP60296739 A JP 60296739A JP 29673985 A JP29673985 A JP 29673985A JP H0746436 B2 JPH0746436 B2 JP H0746436B2
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- JP
- Japan
- Prior art keywords
- semiconductor laser
- value
- level
- setting
- emitted light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Optical Recording Or Reproduction (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はディスクに光学的に情報を記録し、再生する光
学式情報記録再生装置に用いる半導体レーザ駆動装置に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser driving device used in an optical information recording / reproducing device for optically recording and reproducing information on a disc.
従来の技術 従来の技術を第2図,第3図を参照して説明する。第2
図は半導体レーザの電流対光出力特性を示すが温度依存
性が高く、定電流駆動では一定出力を得ることは困難で
ある。このため半導体レーザ後方光を検出し駆動回路に
フィードバックをかけることが行われている。一方光学
的記録装置における半導体レーザ駆動回路は、情報を読
取る再生時に低パワーの一定出力になるように動作し、
情報を書込む記録時には高パワーと低パワーの発光を高
速に繰り返す必要がある。しかしながら単純に温度補償
用のフィードバックループをもった定出力回路に変調回
路を付加しただけでは一般にフィードバックループの時
定数が大きいため変調信号に比例した発光パワーを得る
ことは困難である。Conventional Technology Conventional technology will be described with reference to FIGS. 2 and 3. Second
The figure shows the current vs. light output characteristics of the semiconductor laser, but the temperature dependence is high, and it is difficult to obtain a constant output by constant current drive. Therefore, the semiconductor laser backward light is detected and feedback is given to the drive circuit. On the other hand, the semiconductor laser drive circuit in the optical recording device operates so as to have a constant output of low power at the time of reproduction for reading information,
It is necessary to repeat high-power and low-power light emission at high speed during recording for writing information. However, simply adding a modulation circuit to a constant output circuit having a feedback loop for temperature compensation generally makes it difficult to obtain light emission power proportional to the modulation signal because the time constant of the feedback loop is large.
以下この問題に対応した従来例とその問題点を第3図に
沿って説明する。A conventional example and its problems corresponding to this problem will be described below with reference to FIG.
第3図は従来の半導体レーザ駆動回路のブロック図を表
わしている。再生時には、第1の切換え回路5は端子b
とcが閉じており、第2の切換え回路13は開いている。
半導体レーザ7の光出力は、その後方光がパワー検出回
路1により検出され、制御回路3及び第1の駆動回路6
により半導体レーザの駆動電流が制御される。よってこ
のフィードバック制御により再生パワーが周囲温度に対
して安定化される。つぎに記録時には第1の切換え回路
5は端子aとbが閉じ、第2の切換え回路13が閉じる。FIG. 3 shows a block diagram of a conventional semiconductor laser drive circuit. At the time of reproduction, the first switching circuit 5 has the terminal b.
And c are closed and the second switching circuit 13 is open.
Regarding the optical output of the semiconductor laser 7, the rear light is detected by the power detection circuit 1, and the control circuit 3 and the first drive circuit 6
The drive current of the semiconductor laser is controlled by. Therefore, this feedback control stabilizes the reproduction power with respect to the ambient temperature. Next, during recording, the terminals a and b of the first switching circuit 5 are closed and the second switching circuit 13 is closed.
再生時値保持回路4は再生時の制御信号14を保持しその
信号に対応した半導体レーザ駆動電流が流れる。またこ
の時記録パワー設定回路11の値に対応した半導体レーザ
駆動電流が重畳され記録パワーで発光する。またスイッ
チング回路12は、記録データにしたがって第2の駆動回
路10をオン又はオフし半導体レーザ7は記パワーと再生
パワーを高速に繰り返すことになる。The reproduction value holding circuit 4 holds the control signal 14 at the time of reproduction, and the semiconductor laser drive current corresponding to the signal flows. At this time, the semiconductor laser drive current corresponding to the value of the recording power setting circuit 11 is superimposed to emit light at the recording power. Further, the switching circuit 12 turns on or off the second drive circuit 10 according to the recording data, and the semiconductor laser 7 repeats the recording power and the reproducing power at high speed.
発明が解決しようとする問題点 第3図に示した従来の回路構成では記録時のパワー制御
が行なわれていないため、周囲温度や回路の発熱状態に
より発光パワーが設定した記録パワーよりずれるという
問題がある。Problems to be Solved by the Invention In the conventional circuit configuration shown in FIG. 3, since power control is not performed during recording, the emission power deviates from the set recording power depending on the ambient temperature and the heat generation state of the circuit. There is.
本発明は、かかる点に鑑みてなされたもので再生時のみ
ならず、記録時においてもパワー制御を行い安定したパ
ワー設定が可能な半導体レーザ駆動回路を提供すること
を目的としている。The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor laser drive circuit capable of performing stable power setting by performing power control not only during reproduction but also during recording.
問題点を解決するための手段 本発明は上記問題点を解決するため、パワー検出回路の
出力信号に対し記録期間の記録パワー発光時にはその値
を又記録パワー発光時以外にはその直前の記録パワー発
光時の値を保持する発光パワー保持回路と、記録パワー
設定回路の値と発光パワー保持回路の値を比較しその差
を補正する半導体レーザの駆動量を出力する補正量検出
回路を付加する。Means for Solving the Problems In order to solve the above problems, the present invention provides a value for the output signal of the power detection circuit when the recording power is emitted during the recording period, and a recording power immediately before that when the recording power is not emitted. A light emission power holding circuit for holding the value at the time of light emission and a correction amount detection circuit for comparing the value of the recording power setting circuit and the value of the light emission power holding circuit and outputting the drive amount of the semiconductor laser for correcting the difference are added.
作用 本発明は、上記した構成により再生時のみならず記録時
においてもフィードバック制御が可能となり安定した発
光パワーが得られる。Action The present invention, which has the above-described configuration, enables feedback control not only during reproduction but also during recording, and stable light emission power can be obtained.
実施例 第1図は、本発明の半導体レーザ駆動回路の一実施例を
示すブロック図である。第1図において1は半導体レー
ザの後方光のパワーを検出するパワー検出回路である。
再生時にはパワー検出回路1の出力と再生パワー設定回
路2の出力が制御回路3の入力に加わる。第1の切換え
回路5は端子cとbが閉じており制御回路3は、入力さ
れている2つの信号が等しくなるように制御を行い半導
体レーザ7は再生パワー設定回路2により設定された発
光パワーで安定に発光する。このとき第2の切換え回路
13は開いており第2の駆動回路は動作していない。Embodiment FIG. 1 is a block diagram showing an embodiment of a semiconductor laser drive circuit of the present invention. In FIG. 1, reference numeral 1 is a power detection circuit for detecting the power of the rear light of the semiconductor laser.
During reproduction, the output of the power detection circuit 1 and the output of the reproduction power setting circuit 2 are added to the input of the control circuit 3. The terminals c and b of the first switching circuit 5 are closed, and the control circuit 3 controls so that the two input signals are equal to each other. The semiconductor laser 7 controls the emission power set by the reproduction power setting circuit 2. It emits light stably. At this time, the second switching circuit
13 is open and the second drive circuit is not operating.
第4図に記録期間における各回路の波形の一例を示す。
第4図記録期間Aがt1〜t6とする。またC1は再生パワ
ー、C2は記録パワーであり記録パワー設定回路の値はC2
となっている。第2図に示すように半導体レーザの電流
に対する光出力の関係は、安定にレーザ発光している領
域では温度によらばほぼ(P2−P1)/(i2−i1)=K
(一定)となっている。FIG. 4 shows an example of the waveform of each circuit during the recording period.
FIG. 4 The recording period A is t 1 to t 6 . Also, C 1 is the reproducing power, C 2 is the recording power, and the value of the recording power setting circuit is C 2
Has become. As shown in FIG. 2, the relationship between the light output and the current of the semiconductor laser is approximately (P 2 −P 1 ) / (i 2 −i 1 ) = K depending on the temperature in the stable laser emission region.
It is (constant).
記録期間Aのt1〜t5の間第1図再生時値保持回路4はt1
直前の制御信号14を保持し、第1の切換え回路5が端子
aとbが閉じる。よって半導体レーザ7にはt1直前の再
生時の駆動電流が流れる。また第2の切換え回路13は閉
じる。このとき第2の駆動回路10によって半導体レーザ
7に重畳され流れる駆動電流について説明する。t1〜t2
の間はパワー検出回路1の出力は第4図cに示すように
C1である。発光パワー保持回路8は、t2までの間は再生
パワーC1の値を保持している。また、記録パワー設定回
路11の出力はC2であり補正量検出回路9は(C2−C1)に
比例した電流値 を出力する。ここで、Kは半導体レーザの駆動電流に対
する放射光量の関係の傾きに対応した値であるので補正
量検出回路9は傾きに応じた値を記憶する手段及びKと
(C2−C1)の値に基づいて駆動電流の値を算出する演算
手段を構成する。Figure 1 reproduction value holding circuit 4 between t 1 ~t 5 recording period A t 1
The control signal 14 immediately before is held, and the first switching circuit 5 closes the terminals a and b. Therefore, a driving current for reproduction just before t 1 flows through the semiconductor laser 7. Also, the second switching circuit 13 is closed. At this time, the drive current which is superposed on the semiconductor laser 7 by the second drive circuit 10 and flows will be described. t 1 to t 2
During this period, the output of the power detection circuit 1 is as shown in FIG.
It is C 1 . The light emission power holding circuit 8 holds the value of the reproduction power C 1 until t 2 . Also, the output of the recording power setting circuit 11 is C 2 , and the correction amount detection circuit 9 has a current value proportional to (C 2 −C 1 ). Is output. Here, since K is a value corresponding to the slope of the relationship of the emitted light amount with respect to the driving current of the semiconductor laser, the correction amount detection circuit 9 stores the value corresponding to the slope and K and (C 2 -C 1 ). An arithmetic means for calculating the value of the drive current based on the value is configured.
の電流が第2の駆動回路10によって半導体レーザ7に重
畳され流されたとすると、発光パワーはC2−C1だけ増加
し結果的にC2の記録パワーで発光することになる。しか
し、この時(t1〜t2)は、第4図記録データBは“O"で
あり実際に記録パワーで発光すべき区間ではない。よっ
て、このときスイッチング回路12は、第2の駆動回路10
の動作をオフさせ実際に半導体レーザ7には重畳して電
流が流れない。t2〜t3の区間は、実際に記録パワーで発
光すべき区間でありこのときスイッチング回路12は、第
2の駆動回路10の動作をオンさせる。このt2〜t3の区間
のパワー検出回路1の出力が第4図cのようになったと
する。本来ならば、補正量検出回路9の出力によって記
録パワーC2になるはずであるが、温度などの影響により
ΔC2だけ増加している。よって補正量検出回路9は を出力する。 If the current of (1) is superposed on the semiconductor laser 7 by the second drive circuit 10 and is made to flow, the light emission power is increased by C 2 -C 1 and as a result, light is emitted at the recording power of C 2 . However, at this time (t 1 to t 2 ), the recording data B shown in FIG. Therefore, at this time, the switching circuit 12 becomes the second drive circuit 10
The operation is turned off and the current does not actually flow in the semiconductor laser 7 due to the superposition. The section from t 2 to t 3 is a section where light emission should actually be performed with the recording power, and at this time, the switching circuit 12 turns on the operation of the second drive circuit 10. It is assumed that the output of the power detection circuit 1 in the section from t 2 to t 3 is as shown in FIG. 4c. Originally, the recording power should be C 2 by the output of the correction amount detection circuit 9, but the recording power is increased by ΔC 2 due to the influence of temperature and the like. Therefore, the correction amount detection circuit 9 Is output.
発光パワーは回路の時定数により徐々にC2に近づいてく
る。第4図では一例としてt3において発光パワーがC2に
なったとしている。t3〜t4は、第4図記録データBが
“O"であり記録パワーで発光すべき区間ではないため、
ハイッチング回路12が第2の駆動回路10の動作をオフ
し、半導体レーザ7に重畳して流していた電流が流れな
くなる。よって発光パワーは再生時のC1となる。このと
き発光パワー保持回路8は、t3直前の値を保持する(第
4図ではC2)。The emission power gradually approaches C 2 due to the time constant of the circuit. In FIG. 4, as an example, it is assumed that the emission power becomes C 2 at t 3 . From t 3 to t 4 , since the recording data B in FIG. 4 is “O” and it is not the interval for emitting light at the recording power,
The hitting circuit 12 turns off the operation of the second drive circuit 10, and the current that has been superimposed and passed on the semiconductor laser 7 stops flowing. Therefore, the emission power is C 1 during reproduction. At this time, the light emission power holding circuit 8 holds the value immediately before t 3 (C 2 in FIG. 4).
以後同様な動作を記録期間t1〜t6の間繰り返し、記録パ
ワーが記録パワー設定回路11の値C2に安定する。After that, the same operation is repeated for the recording periods t 1 to t 6 , and the recording power becomes stable at the value C 2 of the recording power setting circuit 11.
発明の効果 以上述べてきたように本発明によれば従来の回路構成で
はフィードバック制御不可能な高い周波数における半導
体レーザの駆動を、半導体レーザの特性を利用し簡易な
回路構成でフィードバック制御を行うことができ、記録
パワーの安定が可能となり実用的にきわめて有用であ
る。EFFECTS OF THE INVENTION As described above, according to the present invention, it is possible to drive a semiconductor laser at a high frequency that cannot be feedback-controlled by the conventional circuit configuration, and perform feedback control with a simple circuit configuration by utilizing the characteristics of the semiconductor laser. This makes it possible to stabilize the recording power and is extremely useful in practice.
第1図は本発明の一実施例における半導体レーザ駆動回
路のブロック図、第2図は半導体レーザの電流対光出力
の特性図、第3図は従来の半導体レーザ駆動回路のブロ
ック図、第4図は本発明の一実施例における各回路の出
力値の時間による変化を示す図である。 1……パワー検出回路、2……再生パワー設定回路、3
……制御回路、4……再生時値保持回路、5……第1の
切換え回路、6……第1の駆動回路、7……半導体レー
ザ、8……発光パワー保持回路、9……補正量検出回
路、10……第2の駆動回路、11……記録パワー設定回
路、12……スイッチング回路、13……第2の切換え回
路、14……制御信号、a〜e……端子。FIG. 1 is a block diagram of a semiconductor laser drive circuit according to an embodiment of the present invention, FIG. 2 is a characteristic diagram of current-optical output of a semiconductor laser, FIG. 3 is a block diagram of a conventional semiconductor laser drive circuit, and FIG. FIG. 6 is a diagram showing a change with time of an output value of each circuit in one embodiment of the present invention. 1 ... power detection circuit, 2 ... reproduction power setting circuit, 3
...... Control circuit, 4 ...... Reproduction value holding circuit, 5 ...... First switching circuit, 6 ...... First driving circuit, 7 ...... Semiconductor laser, 8 ...... Emission power holding circuit, 9 ...... Correction Quantity detection circuit, 10 ... second driving circuit, 11 ... recording power setting circuit, 12 ... switching circuit, 13 ... second switching circuit, 14 ... control signal, a to e ... terminals.
Claims (3)
段と、半導体レーザの放射光量を第1のレベルに設定す
る第1の設定手段と、前記検出手段の出力値と前記第1
の設定手段の出力値の差に応じて半導体レーザを駆動し
て制御する制御手段と、半導体レーザの放射光量を第2
のレベルに設定する第2の設定手段と、半導体レーザの
駆動電流に対する放射光量の関係の傾きに対応した値を
記憶する手段と、前記第2の設定手段に設定された値と
前記検出手段の出力値の差を求め、この差に相当する駆
動電流を前記記憶手段に記憶されている傾きに対応した
値に基づいて算出する演算手段とを備え、半導体レーザ
の放射光量を前記第1のレベルから前記第2のレベルに
切り換える際に、前記制御手段は制御ループを開放に
し、切り換える直前の前記半導体レーザの駆動電流に前
記演算手段の算出値に応じた電流を加算した電流を半導
体レーザに流すことを特徴とする半導体レーザの駆動装
置。1. A detecting means for detecting the emitted light quantity of a semiconductor laser, a first setting means for setting the emitted light quantity of a semiconductor laser to a first level, an output value of the detecting means and the first level.
Control means for driving and controlling the semiconductor laser according to the difference in the output value of the setting means, and
Second setting means for setting a level corresponding to the slope of the relationship of the emitted light amount with respect to the drive current of the semiconductor laser, the value set in the second setting means and the detection means. Arithmetic means for calculating a difference between output values and calculating a driving current corresponding to the difference based on a value corresponding to the inclination stored in the storage means, and irradiating the semiconductor laser with the radiated light quantity at the first level. When switching from the second level to the second level, the control means opens the control loop, and supplies a current obtained by adding the current according to the value calculated by the computing means to the drive current of the semiconductor laser immediately before switching to the semiconductor laser. A semiconductor laser drive device characterized by the above.
段と、半導体レーザの放射光量を第1のレベルに設定す
る第1の設定手段と、前記検出手段の出力値と前記第1
の設定手段の出力値の差に応じて半導体レーザを駆動し
て制御する制御手段と、半導体レーザの放射光量を第2
のレベルに設定する第2の設定手段と、半導体レーザの
放射光量を強弱に変調する信号を発生する信号発生手段
と、半導体レーザの駆動電流に対する放射光量の関係の
傾きに対応した値を記憶する手段と、半導体レーザがパ
ルス変調されて前記検出手段が高レベルの信号を出力し
ている期間は前記検出手段の出力値を出力し、前記検出
手段が低レベルの信号を出力している期間は直前の高レ
ベルの値を保持して出力する検出値保持手段と、前記第
2の設定手段に設定された値と前記検出値保持手段の出
力値の差を求め、この差に相当する駆動電流を前記記憶
手段に記憶されている傾きに対応した値に基づいて算出
する演算手段とを備え、前記第1のレベルの放射光量の
状態から半導体レーザを強弱に変調する際に、前記制御
手段の制御ループを開放にし、変調を開始する直前の半
導体レーザの駆動電流に前記演算手段の算出値に応じた
電流を加算した電流を半導体レーザに流して高レベルの
光量を放射させることを特徴とする半導体レーザの駆動
装置。2. A detecting means for detecting the emitted light quantity of the semiconductor laser, a first setting means for setting the emitted light quantity of the semiconductor laser to a first level, an output value of the detecting means and the first level.
Control means for driving and controlling the semiconductor laser according to the difference in the output value of the setting means, and
Second setting means for setting the level of the radiation intensity of the semiconductor laser, signal generation means for generating a signal for modulating the intensity of the emitted light of the semiconductor laser, and a value corresponding to the slope of the relation of the emitted light intensity with respect to the driving current of the semiconductor laser. Means and the semiconductor laser is pulse-modulated and the detection means outputs a high level signal during a period in which the output value of the detection means is output, and the detection means outputs a low level signal during a period. The detected value holding means for holding and outputting the immediately preceding high level value, and the difference between the value set in the second setting means and the output value of the detected value holding means is obtained, and the drive current corresponding to this difference is obtained. And an arithmetic means for calculating based on a value corresponding to the inclination stored in the storage means, and when the semiconductor laser is strongly modulated from the state of the emitted light amount of the first level, Control loop A semiconductor laser characterized by causing a current obtained by adding a current corresponding to a calculated value of the arithmetic means to a drive current of the semiconductor laser immediately before starting the modulation and starting the modulation to cause the semiconductor laser to emit a high-level light amount. Drive.
の出力値に基づいて算出する制御手段とした特許請求の
範囲1または2記載の半導体レーザの駆動装置。3. The semiconductor laser drive device according to claim 1, wherein the control means calculates the output value of the detection value holding means based on the output value when the output value is stable.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60296739A JPH0746436B2 (en) | 1985-12-27 | 1985-12-27 | Driving device for semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60296739A JPH0746436B2 (en) | 1985-12-27 | 1985-12-27 | Driving device for semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62154335A JPS62154335A (en) | 1987-07-09 |
JPH0746436B2 true JPH0746436B2 (en) | 1995-05-17 |
Family
ID=17837474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60296739A Expired - Fee Related JPH0746436B2 (en) | 1985-12-27 | 1985-12-27 | Driving device for semiconductor laser |
Country Status (1)
Country | Link |
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JP (1) | JPH0746436B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2525943B2 (en) * | 1990-08-02 | 1996-08-21 | 富士通株式会社 | Laser diode control system for optical recording / reproducing apparatus |
-
1985
- 1985-12-27 JP JP60296739A patent/JPH0746436B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JPS62154335A (en) | 1987-07-09 |
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