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JPH0736377B2 - Double-sided wafer exposure system - Google Patents

Double-sided wafer exposure system

Info

Publication number
JPH0736377B2
JPH0736377B2 JP61078839A JP7883986A JPH0736377B2 JP H0736377 B2 JPH0736377 B2 JP H0736377B2 JP 61078839 A JP61078839 A JP 61078839A JP 7883986 A JP7883986 A JP 7883986A JP H0736377 B2 JPH0736377 B2 JP H0736377B2
Authority
JP
Japan
Prior art keywords
wafer
chuck
wafer chuck
chucks
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61078839A
Other languages
Japanese (ja)
Other versions
JPS62235733A (en
Inventor
哲也 工藤
Original Assignee
ロ−ム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ロ−ム株式会社 filed Critical ロ−ム株式会社
Priority to JP61078839A priority Critical patent/JPH0736377B2/en
Publication of JPS62235733A publication Critical patent/JPS62235733A/en
Publication of JPH0736377B2 publication Critical patent/JPH0736377B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、LSI等の薄膜集積回路やMOS集積回路における
各種薄膜成形等に際して、ウエハの表裏両面にパターン
を焼付け形成する場合に用いる露光装置の構造に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to an exposure apparatus used for forming patterns on both front and back surfaces of a wafer when forming various thin films in thin film integrated circuits such as LSI and MOS integrated circuits. Is related to the structure of.

〔従来の技術〕[Conventional technology]

この種のLSI等の半導体基板であるウエハの表裏両面に
コレクタ、ベース、エミッタなどの各種導体層や半導体
層を所定のパターンに形成するため、ウエハの両面に所
定のパターンを焼付け形成するには、予めウエハ表裏両
面にレジストを塗布した後、片面にパターンマスクを被
せて露光し、次いでウエハを裏返して前記パターンの裏
面側に位相一致させて別のパターンを被せて露光し、そ
の後現像工程を経て、所定個数のチップに分割するよう
にしている。
Since various conductor layers such as collectors, bases, and emitters and semiconductor layers are formed in a predetermined pattern on both front and back surfaces of a wafer that is a semiconductor substrate of this kind of LSI, etc. After applying resist on both front and back surfaces of the wafer in advance, one side is covered with a pattern mask for exposure, and then the wafer is turned over and the back side of the pattern is phase-matched with another pattern for exposure, and then the development step is performed. After that, it is divided into a predetermined number of chips.

そしてこの露光装置としては、従来、第3図および第4
図に示すように、発光ランプ20、レンズ系21、パターン
マスク22並びにウエハ23を真空吸着するウエハチャック
24とから成り、ウエハチャック24の表面には、同心状の
環状溝25を多数凹み形成し、各環状溝25を連通させると
共にウエハチャック24の裏面の管26を介して図示しない
真空ポンプに連結してある構成である。
And, as this exposure apparatus, as shown in FIG.
As shown in the figure, a wafer chuck for vacuum-adsorbing the light emitting lamp 20, the lens system 21, the pattern mask 22, and the wafer 23.
24, the surface of the wafer chuck 24 is formed with a large number of concentric annular grooves 25. The annular grooves 25 are communicated with each other and connected to a vacuum pump (not shown) via a tube 26 on the back surface of the wafer chuck 24. It has a structure.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

このような構成の露光装置により、ウエハの両面にパタ
ーン形成するには、まず、前記ウエハチャック24上にウ
エハ23を載せて真空吸着した状態にて、これをパターン
マスク22の下面側に配置し、発光ランプ20を点灯させ
て、まず、前記ウエハ23の上面に所定形状のパターンを
露光した後、ウエハチャック24をパターンマスク22から
遠ざけ、当該ウエハチャック24上のウエハ23を裏返して
真空吸着させ、再度別のパターンマスク22を介して露光
させる工程をとる。
In order to form a pattern on both sides of a wafer by using the exposure apparatus having such a configuration, first, the wafer 23 is placed on the wafer chuck 24 and vacuum-adsorbed, and this is placed on the lower surface side of the pattern mask 22. First, the light-emitting lamp 20 is turned on, and after a pattern of a predetermined shape is exposed on the upper surface of the wafer 23, the wafer chuck 24 is moved away from the pattern mask 22, and the wafer 23 on the wafer chuck 24 is turned upside down to be vacuum-adsorbed. Then, the step of exposing again through another pattern mask 22 is taken.

ところが、前記ウエハ23の裏返し作業時に、最初の露光
により形成されたパターンの裏面側に位置及び位相を同
じくして別のパターンを形成しなければ、後の工程のチ
ップ分割時に各チップの表裏両面に所望のパターンが形
成されていないことになり、一枚のウエハ全体が不良品
となる。
However, at the time of turning over the wafer 23, unless another pattern is formed on the back surface side of the pattern formed by the first exposure with the same position and the same phase, both front and back surfaces of each chip are divided at the time of dividing the chip in a later process. Therefore, the desired pattern is not formed on the wafer, and the entire wafer becomes defective.

しかしながら、前記ウエハの裏返し作業を手動で行う
と、ウエハ片面の真空吸着の位置及び位相と2回目のウ
エハ他面の真空吸着の位置及び位相とがずれ易く、ウエ
ハの不良発生率を低減できないし、且つ正確に設置する
作業自体に非常な手間が掛かり、作業能率を向上できな
いと云う問題があった。
However, if the wafer is turned upside down manually, the position and phase of vacuum suction on one side of the wafer and the position and phase of vacuum suction on the other side of the wafer for the second time easily shift, and the defect occurrence rate of the wafer cannot be reduced. In addition, there is a problem in that the work itself to be accurately installed requires a great deal of time and work efficiency cannot be improved.

本発明は、一対のウエハチャックを用いて、前記問題を
解決すると共に、露光作業を自動化できるようにするこ
とを目的とするものである。
It is an object of the present invention to solve the above-mentioned problems by using a pair of wafer chucks and to make it possible to automate the exposure operation.

〔問題点を解決するための手段〕[Means for solving problems]

そのため本発明は、ウエハの片面をウエハチャックにて
真空吸着した状態で当該ウエハの他面に所定のパターン
マスクう介して露光するように構成した露光装置におい
て、前記ウエハを真空吸着するウエハチャックを一対備
え、そのうちの一方のウエハチャック上にて露光された
ウエハを、当該ウエハチャック上にて露光されたウエハ
を、当該ウエハチャックと他方のウエハチャックとを互
いに対面させて挟持し、両ウエハチャックの真空吸着を
切換えることにより前記他方のウエハチャックに前記ウ
エハを受け渡しさせ、その未露光片面に露光するように
構成したものである。
Therefore, the present invention is an exposure apparatus configured to expose one surface of a wafer by vacuum chucking the wafer on the other surface of the wafer through a predetermined pattern mask. A pair of wafer chucks are provided, and a wafer exposed on one of the wafer chucks is sandwiched between the wafers exposed on the wafer chuck such that the wafer chuck and the other wafer chuck face each other. The vacuum suction is switched to transfer the wafer to the other wafer chuck, and the unexposed one side is exposed.

〔発明の作用及び効果〕[Operation and effect of the invention]

このように、ウエハの片面を真空吸着する一対のウエハ
チャックのうち、一方のウエハチャックに真空吸着され
たウエハを露光したのち、該ウエハを真空吸着したウエ
ハチャックと前記他方のウエハチャックとを、前記ウエ
ハを挟んで両ウエハチャックにおける真空吸着面を互い
に対面させた状態にて真空吸着を切換えると、前記他方
のウエハチャックには、既に露光された面が真空吸着さ
れる状態においてウエハを受け渡しさせることができ
る。
In this way, of the pair of wafer chucks that vacuum-suck one side of the wafer, after exposing the wafer that is vacuum-sucked to one wafer chuck, the wafer chuck that vacuum-sucks the wafer and the other wafer chuck, When vacuum suction is switched in a state where the vacuum suction surfaces of both wafer chucks face each other with the wafer sandwiched therebetween, the wafer chuck is transferred to the other wafer chuck in a state where the already exposed surface is vacuum suctioned. be able to.

従って、手作業によることなく、薄いウエハを一方のウ
エハチャックから他方のウエハチャックに裏返し状態、
即ち未露光面が外向きになるようにして簡単に受け渡し
させることができるのである。
Therefore, a thin wafer can be flipped from one wafer chuck to the other wafer chuck without manual work,
That is, the unexposed surface can be easily delivered with the surface facing outward.

このとき、一対のウエハチャックによりウエハを挟んだ
状態にて両ウエハチャックに真空吸着を作用させ、次い
で前記一方の真空吸着を切ると云うように、一方から他
方に真空吸着を切り替えるのだから、ウエハの受け渡し
時にウエハチャック表面に平行なX,Y方向に対するウエ
ハの位置及びウエハ自体の回動位相ができることがな
い。
At this time, since the vacuum suction is applied to both wafer chucks while sandwiching the wafer by the pair of wafer chucks, and then the vacuum suction of one is cut off, the vacuum suction is switched from one to the other. When the wafer is transferred, the position of the wafer in the X and Y directions parallel to the surface of the wafer chuck and the rotation phase of the wafer itself cannot be generated.

そして、受け渡し作業の完了したウエハは、前記のよう
に既露光面がウエハチャックに真空吸着され、未露光面
が外に露出した状態にてウエハチャックに装着されるの
だから、当該受け渡された他方のウエハチャックを再度
パターンマスクの透過光側に配置すれば、そのまま次の
露光作業を行うことができる。この場合、一対のウエハ
チャックを左右に配置した状態を考察すると、一方のウ
エハチャックに載置されたウエハの向きが受け渡し後の
ウエハチャック上においては反対側となる、いわゆる左
右対称状となることを考慮して後の露光におけるパター
ンマスクの配置を決定すれば良い。
Then, the wafer for which the transfer operation has been completed is transferred to the wafer chuck because the exposed surface is vacuum-sucked to the wafer chuck and the unexposed surface is exposed to the outside as described above. By arranging the other wafer chuck again on the transmitted light side of the pattern mask, the next exposure operation can be performed as it is. In this case, considering a state in which a pair of wafer chucks are arranged on the left and right sides, the orientation of the wafer placed on one of the wafer chucks is opposite on the transferred wafer chuck, that is, a so-called symmetrical shape. The arrangement of the pattern mask in the subsequent exposure may be determined in consideration of the above.

このように、本発明従えば、表裏両面を露光するウエハ
の受け渡し作業が極めて簡単となり、且つ一方のウエハ
チャックから他方のウエハチャックへのウエハの受け渡
し作業時の当該ウエハの位置及び位相のずれが全く無く
なり、正確に行えるから、位置決め作業及び位相決め作
業を人手を介さない自動化装置に構成することができる
効果を奏し、パターン形成時における不良率の低減およ
び作業能率の向上を計ることができる効果を奏する。
As described above, according to the present invention, the wafer transfer operation for exposing both front and back surfaces is extremely simple, and there is no shift in the position and phase of the wafer during the wafer transfer operation from one wafer chuck to the other wafer chuck. Since it is completely eliminated and can be performed accurately, there is an effect that the positioning work and the phase setting work can be configured as an automated device without human intervention, and it is possible to reduce the defect rate at the time of pattern formation and improve the work efficiency. Play.

〔実施例〕〔Example〕

次に本発明を実施例を説明すると、第1図における露光
装置1は発光ランプ2及びレンズ3から成る照明系が一
系統で、レンズ3の下方には、左右両側に適宜隔てて一
対のウエハ4a,4bをその真空吸着面が上向きになるよう
にして配設する。
An embodiment of the present invention will now be described. The exposure apparatus 1 shown in FIG. 1 has a single illumination system including a light emitting lamp 2 and a lens 3. Below the lens 3, a pair of wafers are appropriately separated on the left and right sides. 4a and 4b are arranged so that the vacuum suction surface faces upward.

そして、前記レンズ3の下方には、水平軸回りに90°回
動し得る回動鏡6を配設し、該鏡6の左右両側には、同
じく固定鏡7,8を配設する一方、前記各ウエハチャック4
a,4bの上方に適宜隔ててパターンツスク5a,5bを各々配
設する。
Below the lens 3, a rotating mirror 6 which can rotate 90 ° about a horizontal axis is arranged, and on the left and right sides of the mirror 6, fixed mirrors 7 and 8 are similarly arranged. Each wafer chuck 4
Pattern disks 5a and 5b are arranged above a and 4b at appropriate intervals.

前記各ウエハチャック4a,4bは、従来技術における真空
吸着式のものと同じ構成、即ち、第4図に示すように、
ウエハチャックの上表面には、同心状の環状溝を多数凹
み形成し、各環状溝を連通させると共にウエハチャック
の裏面の連通管を介して図示しない真空ポンプに連結し
た構成であり、真空ぽんぷと各ウエハチャックとの間の
連通管にはウエハチャックへの真空を適宜遮断すること
ができる操作弁を有する。
Each of the wafer chucks 4a and 4b has the same structure as the vacuum suction type in the prior art, that is, as shown in FIG.
A large number of concentric annular grooves are formed on the upper surface of the wafer chuck, and the annular grooves are connected to each other and connected to a vacuum pump (not shown) through a communication pipe on the back surface of the wafer chuck. The communication pipe between each wafer chuck has an operation valve capable of appropriately shutting off the vacuum to the wafer chuck.

さらに、前記両ウエハチャック4a,4bは、当該両者が互
いに水平状態にて近付きまたは遠ざかるように移動自在
に構成されていると共に、両ウエハチャック4a,4bが一
定程度近付いた状態にてその両者の吸着面が対面して合
されるように回動自在に構成されている。
Further, the both wafer chucks 4a, 4b are configured to be movable so that the two wafer chucks 4a, 4b can approach or move away from each other in a horizontal state, and both wafer chucks 4a, 4b can approach each other to a certain extent. It is configured to be rotatable so that the suction surfaces face each other.

この構成により、第1図における右側のウエハチャック
4aの上面に未露光のウエハ10を載置し、当該ウエハチャ
ック4aに真空ポンプと連通させると、ウエハ10の下面が
いわゆる真空吸着され、ウエハ10が位置ずれせず且つ歪
みをなくした略平面状態にて載置できる。
With this configuration, the wafer chuck on the right side in FIG.
When an unexposed wafer 10 is placed on the upper surface of 4a and the wafer chuck 4a is brought into communication with a vacuum pump, the lower surface of the wafer 10 is so-called vacuum-sucked, and the wafer 10 is not displaced and is substantially flat without distortion. Can be placed in a state.

このウエハチャック4aを所定のパターンマスク5aの下面
側に配置し、回動鏡6を、その反射面が一方の固定鏡7
の反射面と対面するように回動させて後、発光ランプ2
から光を照射すると、ウエハ10の上面には前記パターン
マスク5a通りのパーンが焼付けられたことになる。
The wafer chuck 4a is arranged on the lower surface side of the predetermined pattern mask 5a, and the rotary mirror 6 is fixed to the fixed mirror 7 whose reflection surface is one.
After turning so as to face the reflective surface of the
When the light is emitted from the above, the pattern of the pattern mask 5a is printed on the upper surface of the wafer 10.

次いで、前記ウエハチャック4aに真空吸着作用を施した
まま、両ウエハチャック4a,4bを互いに近付け合うよう
に平行移動させる(矢印A方向)。その後、矢印B方向
に上向き回動させて両ウエハチャック4a,4bをその真空
吸着面が互いに対面するようにして近付ける。
Next, the wafer chucks 4a and 4b are moved in parallel with each other while the vacuum chucking action is being applied to the wafer chucks 4a (direction of arrow A). Then, the wafer chucks 4a and 4b are rotated upward in the direction of arrow B so that the two wafer chucks 4a and 4b are brought close to each other with their vacuum suction surfaces facing each other.

ウエハ10を両ウエハチャック4a,4bにて挟持した状態に
した後、他方のウエハチャック4bに対する真空吸着作用
を開始せしめ、当該ウエハチャック4bに対してウエハ10
の既露光面が真空吸着された状態にて前記一方のウエハ
チャック4aにおける真空吸着を遮断すると、前記他方の
ウエハチャック4bにウエハ10が真空吸着された状態にて
受け渡しすることができる。
After the wafer 10 is held between the two wafer chucks 4a and 4b, the vacuum suction action on the other wafer chuck 4b is started, and the wafer 10 is held against the wafer chuck 4b.
If the vacuum suction of the one wafer chuck 4a is interrupted while the exposed surface of the wafer is vacuum-sucked, the wafer 10 can be transferred to the other wafer chuck 4b in the vacuum suction state.

次に、前記両ウエハチャック4a,4bを第2図の矢印C方
向に回動させ当該両ウエハチャック4a,4bの真空吸着面
が上向きになるように復帰させる。
Next, the both wafer chucks 4a, 4b are rotated in the direction of arrow C in FIG. 2 and returned so that the vacuum suction surfaces of the both wafer chucks 4a, 4b face upward.

しかる後、前記他方のウエハチャック4bをパターンマス
ク5bの下面側に向けて水平移動(矢印D方向)させる一
方、回動鏡6を回動して他方の固定鏡8に対面させ、こ
の状態にて発光ランプ1から光を照射することで、前記
ウエハ10の表裏両面を所定のパターンに焼付することが
できるのである。
Then, while the other wafer chuck 4b is horizontally moved (in the direction of arrow D) toward the lower surface side of the pattern mask 5b, the rotating mirror 6 is rotated to face the other fixed mirror 8, and in this state. By irradiating light from the light emitting lamp 1 on both sides, the front and back surfaces of the wafer 10 can be printed in a predetermined pattern.

その後、前記他方のウエハチャック4bの真空吸着作用を
解除してウエハ10を取り除く。また前記他方のウエハチ
ャック4b上での焼付作業中に一方のウエハチャック4aに
は別のウエハ10を載置して準備を完了しておくのが作業
効率上好ましい。
Then, the vacuum suction action of the other wafer chuck 4b is released and the wafer 10 is removed. In addition, it is preferable from the standpoint of work efficiency that another wafer 10 is placed on one wafer chuck 4a during the printing operation on the other wafer chuck 4b to complete the preparation.

以上の実施例においては、照明系が発光ランプ1および
レンズ系2を一つづつにし、回動鏡6によって光照射位
置を左右いずれか一方に選択される照明1系統式であっ
たが、前記各パターンマスク5a,5b箇所毎に対応させ
て、発光ランプ1とレンズ系2とを備える2照明系統式
の構成であっても適用できることは云うまでもない。
In the above-described embodiments, the illumination system is the one-illumination system in which the light emitting lamp 1 and the lens system 2 are provided one by one, and the turning mirror 6 selects the light irradiation position to either left or right. It goes without saying that a two-illumination system type configuration including the light emitting lamp 1 and the lens system 2 can be applied to each of the pattern masks 5a and 5b.

さらに、前記実施例では、一対のウエハチャック4a,4b
の両者を水平移動させると共に互いに対面させ、及び離
れさせる回動操作を行わせていたが、それに替え,一方
のウエハチャック例えばウエハチャック4aはパターンマ
スク5aに近付いて対面する位置とそれから遠ざかる位置
とに平行移動するのみで、他方のウエハチャック4bは、
前記遠ざかった位置のウエハチャック4aに対して被さる
ように対面できる180度の回動操作と他方のパターンマ
スク5b方向への移動操作をなすように構成しても良い。
Further, in the above embodiment, the pair of wafer chucks 4a, 4b
The two wafers were horizontally moved, faced each other, and rotated to move them away from each other, but instead, one of the wafer chucks, for example, the wafer chuck 4a, faces the pattern mask 5a and faces the pattern mask 5a, and moves away from it. The wafer chuck 4b on the other side only
It may be configured to perform a 180-degree rotation operation capable of facing the wafer chuck 4a in the distant position so as to cover it and a movement operation in the direction of the other pattern mask 5b.

なお、本発明において、ウエハチャック4a,4bは真空吸
着によりウエハ10を固定状態に保持し、脱落が不能であ
るから、焼付作業中の照射光が略水平で、ウエハ10の表
面が鉛直方向を向くような配置であっても良い。
In the present invention, since the wafer chucks 4a and 4b hold the wafer 10 in a fixed state by vacuum suction and cannot be removed, the irradiation light during the baking operation is substantially horizontal, and the surface of the wafer 10 is vertical. It may be arranged to face.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の実施例装置を示す概略側面図、第2図
はその作用説明図、第3図及び第4図は従来技術を示
し、第3図は装置の側面図、第4図は第3図のIV−IV線
視平面図である。 1……露光装置、2,20……発光ランプ、3,21……レンズ
系、4a,4b,24……ウエハチャンク、5a,5b,22……パター
ンマスク、6……回動鏡、7,8……固定鏡、10,23……ウ
エハ、25……環状溝、26……管。
FIG. 1 is a schematic side view showing an apparatus according to an embodiment of the present invention, FIG. 2 is an explanatory view of its operation, FIGS. 3 and 4 show prior art, and FIG. 3 is a side view of the apparatus, FIG. FIG. 4 is a plan view taken along the line IV-IV in FIG. 1 ... exposure device, 2,20 ... light emitting lamp, 3,21 ... lens system, 4a, 4b, 24 ... wafer chunk, 5a, 5b, 22 ... pattern mask, 6 ... rotating mirror, 7 , 8 …… Fixed mirror, 10,23 …… Wafer, 25 …… annular groove, 26 …… Tube.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】ウエハの片面をウエハチャックにて真空吸
着した状態で当該ウエハの他面に所定のパターンマスク
を介して露光するように構成した露光装置において、前
記ウエハを真空吸着するウエハチャックを一対備え、そ
のうちの一方のウエハチャック上にて露光されたウエハ
を、当該ウエハチャックと他方のウエハチャックとを互
いに対面させて挟持し、両ウエハチャックの真空吸着を
切換えることにより前記他方のウエハチャックに前記ウ
エハを受け渡しさせ、その未露光片面に露光するように
構成したことを特徴とするウエハ両面露光装置。
1. An exposure apparatus configured to expose one surface of a wafer to the other surface of the wafer through a predetermined pattern mask while the one surface of the wafer is vacuum-adsorbed by the wafer chuck. A pair of wafers, one of which is exposed to the wafer, and the other wafer chuck is sandwiched by facing the wafer chuck and the other wafer chuck, and the other wafer chuck is switched by switching vacuum suction of both wafer chucks. A wafer double-sided exposure apparatus, characterized in that the wafer is transferred to and exposed on one side of the wafer not exposed.
JP61078839A 1986-04-04 1986-04-04 Double-sided wafer exposure system Expired - Lifetime JPH0736377B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61078839A JPH0736377B2 (en) 1986-04-04 1986-04-04 Double-sided wafer exposure system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61078839A JPH0736377B2 (en) 1986-04-04 1986-04-04 Double-sided wafer exposure system

Publications (2)

Publication Number Publication Date
JPS62235733A JPS62235733A (en) 1987-10-15
JPH0736377B2 true JPH0736377B2 (en) 1995-04-19

Family

ID=13672995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61078839A Expired - Lifetime JPH0736377B2 (en) 1986-04-04 1986-04-04 Double-sided wafer exposure system

Country Status (1)

Country Link
JP (1) JPH0736377B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100951828B1 (en) * 2003-03-12 2010-04-12 신꼬오덴기 고교 가부시키가이샤 Pattern writing apparatus and pattern writing method for forming patterns having mirror image relations with respect to the substrate on both sides of the substrate, and a test apparatus for use in the pattern writing apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4644382B2 (en) * 2001-04-24 2011-03-02 日立ビアメカニクス株式会社 Exposure system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100951828B1 (en) * 2003-03-12 2010-04-12 신꼬오덴기 고교 가부시키가이샤 Pattern writing apparatus and pattern writing method for forming patterns having mirror image relations with respect to the substrate on both sides of the substrate, and a test apparatus for use in the pattern writing apparatus

Also Published As

Publication number Publication date
JPS62235733A (en) 1987-10-15

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