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JPH0736350Y2 - Optical device - Google Patents

Optical device

Info

Publication number
JPH0736350Y2
JPH0736350Y2 JP13156189U JP13156189U JPH0736350Y2 JP H0736350 Y2 JPH0736350 Y2 JP H0736350Y2 JP 13156189 U JP13156189 U JP 13156189U JP 13156189 U JP13156189 U JP 13156189U JP H0736350 Y2 JPH0736350 Y2 JP H0736350Y2
Authority
JP
Japan
Prior art keywords
optical device
waveguide
film body
substrate
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13156189U
Other languages
Japanese (ja)
Other versions
JPH0369132U (en
Inventor
秀彰 岡山
良子 渋谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP13156189U priority Critical patent/JPH0736350Y2/en
Publication of JPH0369132U publication Critical patent/JPH0369132U/ja
Application granted granted Critical
Publication of JPH0736350Y2 publication Critical patent/JPH0736350Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【考案の詳細な説明】 (産業上の利用分野) この考案は、例えば強誘電体結晶基板を用いて形成した
導波型光スイッチにおいて、焦電効果に起因して生じた
電荷による、動作特性の変動を防止するようにした光デ
バイスに関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) This invention is directed to an operating characteristic of a waveguide type optical switch formed by using, for example, a ferroelectric crystal substrate, due to an electric charge generated due to a pyroelectric effect. The present invention relates to an optical device configured to prevent the fluctuation of

(従来の技術) LiNbO3等の強誘電体結晶を用いて形成した光デバイスに
おいては動作特性例えば光スイッチの動作点が焦電効果
によって変動することが知られている。このような特性
変動を防止するようにした光デバイスとして、例えば文
献I:特開昭62-173428号公報に開示されているものがあ
る。以下、図面を参照し、文献Iの従来の光デバイスに
つき簡単に説明する。
(Prior Art) It is known that in an optical device formed using a ferroelectric crystal such as LiNbO 3 , the operating characteristics, for example, the operating point of an optical switch fluctuates due to the pyroelectric effect. As an optical device for preventing such characteristic fluctuation, for example, there is one disclosed in Document I: JP-A-62-173428. The conventional optical device of Document I will be briefly described below with reference to the drawings.

第8図は従来の光デバイスの一実施例の要部構成を概略
的に示す断面図であり、X分岐を構成する2本の導波路
を備えた光スイッチの一方の導波路及びその近傍の構成
を概略的に示す。
FIG. 8 is a cross-sectional view schematically showing a main part configuration of an embodiment of a conventional optical device. One waveguide of an optical switch having two waveguides forming an X branch and the vicinity thereof are shown. The configuration is shown schematically.

同図に示す光デバイスでは、zカットLiNbO3基板10の一
方の側にTi拡散導波路12を設け、この導波路12上にSiO2
バッファ層14、導波路の屈折率を制御するための制御電
極16及びSi膜体18を順次に設け、さらに基板10の他方の
側に接地用導電膜体20を設けている。制御電極16はAl電
極部材16a〜16cから成り、制御電極16を介して導波路に
電界を印加するとこの電界に応じて導波路の屈折率が変
化する。膜体12は、少なくとも電極部材16a、16b、16c
間に設けられ、また導波路の屈折率制御時にデバイスを
破壊するような大電流が制御電極16間に流れないような
抵抗値を有する。
In the optical device shown in the figure, a Ti diffusion waveguide 12 is provided on one side of a z-cut LiNbO 3 substrate 10, and SiO 2 is formed on the waveguide 12.
A buffer layer 14, a control electrode 16 for controlling the refractive index of the waveguide, and a Si film body 18 are sequentially provided, and a grounding conductive film body 20 is provided on the other side of the substrate 10. The control electrode 16 is composed of Al electrode members 16a to 16c, and when an electric field is applied to the waveguide via the control electrode 16, the refractive index of the waveguide changes according to this electric field. The film body 12 includes at least electrode members 16a, 16b, 16c.
It has a resistance value such that a large current which is provided between the control electrodes 16 does not flow between the control electrodes 16 and destroys the device when the refractive index of the waveguide is controlled.

膜体12を少なくとも電極部材16a、16b、16c間に設けて
いるので、基板10の一方の側の基板面10aに焦電効果に
よる+電荷が発生すると、第8図にも示すように、この
+電荷に対応する−電荷が制御電極16及び膜体18に基板
面10aに沿って一様に発生する。この結果、焦電効果に
よる動作特性の変動をなくすことができる。
Since the film body 12 is provided at least between the electrode members 16a, 16b, 16c, when + charge is generated on the substrate surface 10a on one side of the substrate 10 due to the pyroelectric effect, as shown in FIG. Negative charges corresponding to positive charges are uniformly generated in the control electrode 16 and the film body 18 along the substrate surface 10a. As a result, it is possible to eliminate fluctuations in operating characteristics due to the pyroelectric effect.

これに加え、接地用導電膜体20は光デバイスの動作時に
接地され、従って基板10の他方の側の基板面10bに昇電
効果による電荷が滞留するのを防止できる。この結果、
基板面10a、10b間の電界発生を防止でき従って焦電効果
による光デバイスの動作特性の変動をなくすことができ
る。
In addition to this, the grounding conductive film body 20 is grounded during the operation of the optical device, and therefore, it is possible to prevent the electric charge from accumulating on the substrate surface 10b on the other side of the substrate 10 due to the boosting effect. As a result,
It is possible to prevent the generation of an electric field between the substrate surfaces 10a and 10b, so that it is possible to eliminate fluctuations in the operating characteristics of the optical device due to the pyroelectric effect.

(考案が解決しようとする課題) しかしながら上述のような光デバイスでは、導波路12の
伝搬光が制御電極16に吸収されて光のロスを生じるのを
防止するため、通常は、バッファ層14を介して制御電極
16を導波路12上に設け、導波路12と制御電極16とを直接
接触させないようにする。このバッファ層14が含む不純
物キャリアは、制御電極16が屈折率制御のために形成す
る電界を打ち消すように作用し、この結果、動作特性特
に光スイッチにおいては動作点が変動するという問題点
があった。
(Problems to be solved by the invention) However, in the optical device as described above, in order to prevent the propagation light of the waveguide 12 from being absorbed by the control electrode 16 and causing a loss of light, the buffer layer 14 is usually provided. Control electrode through
16 is provided on the waveguide 12 so that the waveguide 12 and the control electrode 16 do not come into direct contact with each other. The impurity carriers contained in the buffer layer 14 act so as to cancel the electric field formed by the control electrode 16 for controlling the refractive index, and as a result, there is a problem in that the operating characteristics fluctuate, particularly in the optical switch. It was

この考案の目的は、上述した従来の問題点を解決し、従
来より動作特性が安定する光デバイスを提供することに
ある。
An object of the present invention is to solve the above-mentioned conventional problems and provide an optical device having more stable operation characteristics than ever before.

(課題を解決するための手段) この目的の達成を図るため、この考案の光デバイスは、
焦電効果を有する基板に設けた導波路と、この導波路の
屈折率を制御するため基板上に設けた制御電極と、少な
くとも制御電極間に設けた膜体とを有して成る光デバイ
スにおいて、導波路が設けられた側の基板面と膜体との
間に空隙を設けて成ることを特徴とする。
(Means for Solving the Problems) In order to achieve this object, the optical device of the present invention is
In an optical device comprising a waveguide provided on a substrate having a pyroelectric effect, a control electrode provided on the substrate for controlling the refractive index of the waveguide, and a film body provided at least between the control electrodes. A gap is provided between the film surface and the substrate surface on the side where the waveguide is provided.

(作用) 上述のような構成によれば、導波路が設けられた側の基
板面と膜体との間に空隙を設けるので導波路を伝搬する
光が制御電極に吸収されるのを防止できる。
(Operation) According to the above-mentioned configuration, since the gap is provided between the substrate surface on the side where the waveguide is provided and the film body, it is possible to prevent the light propagating through the waveguide from being absorbed by the control electrode. .

(実施例) 以下、図面を参照し、この考案の実施例につき説明す
る。尚、図面はこの考案が理解できる程度に概略的に示
してあるにすぎず、従って各構成成分の形状、寸法及び
配設位置を図示例に限定するものではない。
Embodiment An embodiment of the present invention will be described below with reference to the drawings. It should be noted that the drawings are only schematically illustrated to the extent that the present invention can be understood, and therefore, the shapes, dimensions, and disposition positions of each component are not limited to the illustrated examples.

第一実施例 第1図及び第2図はこの考案の第一実施例の構成を概略
的に示す断面図及び平面図を示し、第1図は第2図のI-
I線に沿って取った断面を示す。
First Embodiment FIGS. 1 and 2 are a sectional view and a plan view schematically showing the constitution of the first embodiment of the present invention, and FIG. 1 is a line I- of FIG.
A cross section taken along line I is shown.

これら図にも示すように、第一実施例の光デバイス20
は、焦電効果を有する基板22に設けた導波路24、26と、
導波路24、26の屈折率を制御するため基板22上に設けた
制御電極28と、少なくとも制御電極28間に設けた膜体30
とを有し、導波路24、26が設けられた側の基板面22aと
膜体30との間に空隙32を設けた構成を有する。
As shown in these figures, the optical device 20 of the first embodiment
Are waveguides 24 and 26 provided on the substrate 22 having a pyroelectric effect,
A control electrode 28 provided on the substrate 22 for controlling the refractive index of the waveguides 24 and 26, and a film body 30 provided at least between the control electrodes 28.
And a gap 32 is provided between the film body 30 and the substrate surface 22a on the side where the waveguides 24 and 26 are provided.

そしてこの実施例の光デバイス20は制御電極28及び膜体
30を支えるための支持部34を備えた構成を有する。
The optical device 20 of this embodiment includes the control electrode 28 and the film body.
It has a configuration including a support portion 34 for supporting the 30.

尚、図中の符号36は光デバイス20の作成時に用いたエッ
チング液注入部を示す。
Incidentally, reference numeral 36 in the drawing denotes an etching solution injecting part used when the optical device 20 is produced.

以下、この実施例につきより詳細に説明する。Hereinafter, this embodiment will be described in more detail.

第一実施例はこの考案を方向性結合器型の導波型光スイ
ッチに適用した例である。
The first embodiment is an example in which the present invention is applied to a directional coupler type waveguide type optical switch.

この例では、基板22の一方の基板面22a側に互いに平行
な導波路24、26を設ける。
In this example, waveguides 24 and 26 that are parallel to each other are provided on one substrate surface 22a side of the substrate 22.

制御電極28は導波路24及び26に対して設けた2個の電極
部材28a及び28bから成り、支持部34は補強部材34a及び
スペーサ34bから成る。制御電極28を空隙32上で支える
ため、スペーサ34bを空隙32の周囲を囲むように基板22a
面に設け、このスペーサ34b上に順次に膜体30、制御電
極28及び補強部材34aを設ける。空隙32上の膜体30及び
制御電極28を、補強部材34aにより支える。光デバイス2
0は使用環境雰囲気例えば空気又は不活性ガスが空隙32
に充満した状態で動作する。
The control electrode 28 is composed of two electrode members 28a and 28b provided for the waveguides 24 and 26, and the supporting portion 34 is composed of a reinforcing member 34a and a spacer 34b. In order to support the control electrode 28 on the void 32, the spacer 34b surrounds the void 32 so as to surround the substrate 22a.
The film body 30, the control electrode 28, and the reinforcing member 34a are sequentially provided on the spacer 34b. The film body 30 and the control electrode 28 on the void 32 are supported by the reinforcing member 34a. Optical device 2
0 is a use environment atmosphere, for example, air or an inert gas is a void 32
Operates in a full state.

膜体30を少なくとも制御電極28間(電極部材28a、28b
間)に設ければよいが、この例では基板面22aのほぼ全
面に対応する領域に膜体30を設ける。膜体30を少なくと
も制御電極28間に設けることによって、+電荷が焦電効
果によって基板面22aに生じた際に+電荷に対応する−
電荷が基板面22aに沿ってほぼ一様に分布して制御電極2
8及び膜体30に生じ、焦電効果による動作特性の変動を
防止できる。
The film body 30 is placed at least between the control electrodes 28 (electrode members 28a, 28b
However, in this example, the film body 30 is provided in a region corresponding to almost the entire substrate surface 22a. By providing the film body 30 at least between the control electrodes 28, + charges correspond to + charges when they are generated on the substrate surface 22a by the pyroelectric effect.
The charge is distributed almost uniformly along the substrate surface 22a and the control electrode 2
8 and the film body 30 can be prevented from changing the operating characteristics due to the pyroelectric effect.

次に第3図を参照し、第一実施例の光デバイス20の作成
方法につき一例を挙げて説明する。第3図は第一実施例
の主要な製造工程段階を概略的に示す工程図であり、同
図(A)〜(C)は第2図に対応する平面図及び同図
(D)〜(G)は第1図に対応する断面図である。
Next, with reference to FIG. 3, an example of a method for producing the optical device 20 of the first embodiment will be described. FIG. 3 is a process diagram schematically showing main manufacturing process steps of the first embodiment, and FIGS. 3A to 3C are plan views corresponding to FIG. 2 and FIGS. G) is a sectional view corresponding to FIG. 1.

まず焦電効果を有する基板22としてzカットLiNbO3基板
を用意し、拡散技術を用いてこの基板22の基板面22a側
に直線導波路24、26を形成する(第3図(A))。
First, a z-cut LiNbO 3 substrate is prepared as the substrate 22 having the pyroelectric effect, and linear waveguides 24 and 26 are formed on the substrate surface 22a side of the substrate 22 by using a diffusion technique (FIG. 3 (A)).

次にSiO2、Si、Cr又はその他の任意好適なスペーサ34b
の形成材料を基板面22a上に積層し、次いでこの形成材
料の層を、空隙32の形成予定領域の基板面22aを露出す
るようにパターニングしてスペーサ34bを形成する(第
3図(B))。
Then SiO 2 , Si, Cr or any other suitable spacer 34b
Is laminated on the substrate surface 22a, and then the layer of this forming material is patterned so as to expose the substrate surface 22a in the region where the void 32 is to be formed to form the spacer 34b (FIG. 3 (B)). ).

次に後述する工程でエッチング液により溶かし出され除
去される埋込み層40を、露出した基板面22a上に積層
し、空隙32の形成予定領域を埋込み層40で埋め込む。
(第3図(C))。埋込み層40の形成材料にはレジス
ト、SiO2等のエッチング除去可能な任意好適な材料を用
いる。好ましくは、埋込み層40はエッチング除去される
が、埋込み層40以外の光デバイス20の構成成分はエッチ
ング除去されないように、埋込み層40の形成材料を選択
する。
Next, a buried layer 40 that is dissolved and removed by an etching solution in a step described below is stacked on the exposed substrate surface 22a, and the region where the void 32 is to be formed is buried with the buried layer 40.
(FIG. 3 (C)). As a material for forming the buried layer 40, any suitable material that can be removed by etching, such as resist or SiO 2 , is used. Preferably, the material for forming the buried layer 40 is selected so that the buried layer 40 is etched away, but the constituent components of the optical device 20 other than the buried layer 40 are not etched away.

次いで埋込み層40上に膜体30を積層する(第3図
(E))。膜体30の形成材料としては、電極部材28a、2
8bの通電時にこれら部材28a、28b間に大電流が流れてデ
バイス20が破壊しないような抵抗値の膜体30を形成でき
る任意好適な誘電体材料を用いる。例えばアニールした
Si層又はサーメット層を、膜体30とすることができる。
Next, the film body 30 is laminated on the embedding layer 40 (FIG. 3 (E)). As the material for forming the film body 30, electrode members 28a, 2
Any suitable dielectric material that can form a film body 30 having a resistance value so that a large current flows between the members 28a and 28b when the device 8b is energized and the device 20 is not destroyed is used. For example annealed
The Si layer or the cermet layer can be the film body 30.

次に膜体30上に任意好適な電極材料の層を形成し、この
層をパターニングして電極部材28a、28bを形成する(第
3図(E))。
Next, a layer of any suitable electrode material is formed on the film body 30, and this layer is patterned to form electrode members 28a and 28b (FIG. 3 (E)).

次にポリイミドその他の任意好適な材料から成る補強部
材34aを電極部材28a、28b上に積層する(第3図
(F))。
Then, a reinforcing member 34a made of polyimide or any other suitable material is laminated on the electrode members 28a and 28b (FIG. 3 (F)).

次いで、補強部材34aの表面から埋込み層40に至る深さ
のエッチング液注入部36例えば穴を、補強部材34a及び
膜体30のエッチングにより形成する(第3図(G))。
Next, the etching liquid injection part 36, for example, a hole having a depth from the surface of the reinforcing member 34a to the embedded layer 40 is formed by etching the reinforcing member 34a and the film body 30 (FIG. 3 (G)).

次にエッチング液注入部36に埋込み層40のエッチング液
を注入し、溶かした埋込み層40をエッチング注入口36よ
り排出して空隙32を形成し、第1図に示す光デバイス20
を得る。埋込み層40のエッチング液には、埋込み層40を
溶かすが、支持部34、膜体30、基板22等の光デバイス20
の構成成分を実質的に溶かさない任意好適なものを用
い、例えばアセトンの溶剤又はHFの溶剤を用いる。
Next, the etchant for the embedding layer 40 is injected into the etchant injecting portion 36, and the melted embedding layer 40 is discharged from the etching injecting port 36 to form the void 32, and the optical device 20 shown in FIG.
To get Although the buried layer 40 is dissolved in the etching liquid for the buried layer 40, the optical device 20 such as the support portion 34, the film body 30, the substrate 22 or the like is used.
Any suitable solvent that does not substantially dissolve the constituents of is used, for example, a solvent of acetone or a solvent of HF.

第二実施例 第4図及び第5図はこの考案の第二実施例の構成を概略
的に示す断面図及び平面図であり、第4図は第5図のIV
-IV線に沿って取った断面を示す。尚、第一実施例の構
成成分に対応する構成成分については同一の符号を付し
て示す。
Second Embodiment FIGS. 4 and 5 are a sectional view and a plan view schematically showing the configuration of the second embodiment of the present invention, and FIG. 4 is an IV of FIG.
-Shows a cross section taken along line IV. The constituents corresponding to those of the first embodiment are designated by the same reference numerals.

以下、第一実施例と相違する点につき説明し、第一実施
例と同様の点についてはその詳細な説明を省略する。
Hereinafter, differences from the first embodiment will be described, and detailed description of the same points as the first embodiment will be omitted.

第二実施例の光デバイス42は分岐干渉型の導波型光スイ
ッチにこの考案を適用した例であり、この例では基板22
の基板面22a側に直線導波路24、26及びY分岐導波路4
4、46から成る分岐干渉器を設ける。Y分岐導波路44を
直線導波路24、26の一方の側に設けこの分岐導波路44の
2つの分岐端部のうちの一方に直線導波路24を及び他方
に直線導波路26を結合し、同様にY分岐導波路46を直線
導波路24、26の他方の側に設けこの分岐導波路46の2つ
の分岐のうちの一方に直線導波路24及び他方に直線導波
路26を結合し、分岐干渉器を構成する。
The optical device 42 of the second embodiment is an example in which the present invention is applied to a waveguide type optical switch of branch interference type.
Of the linear waveguides 24 and 26 and the Y-branch waveguide 4 on the substrate surface 22a side of
A branch interferometer consisting of 4 and 46 is provided. The Y branch waveguide 44 is provided on one side of the straight waveguides 24 and 26, and the straight waveguide 24 is coupled to one of the two branch ends of the straight waveguide 24 and the straight waveguide 26 is coupled to the other. Similarly, the Y branch waveguide 46 is provided on the other side of the straight waveguides 24 and 26, and the straight waveguide 24 is coupled to one of the two branches of the straight waveguide 46 and the straight waveguide 26 is coupled to the other branch, Configure an interferometer.

第二実施例の光デバイス42も第一実施例と同様にして作
成できる。
The optical device 42 of the second embodiment can also be manufactured in the same manner as in the first embodiment.

第三実施例 第6図及び第7図はこの考案の第三実施例の説明に供す
る断面図及び平面図であり、第6図は第7図のVI-VI線
に沿って取った断面を示す。尚、上述した実施例の構成
成分に対応する構成成分については同一の符号を付して
示す。
Third Embodiment FIGS. 6 and 7 are a sectional view and a plan view for explaining a third embodiment of the present invention, and FIG. 6 is a sectional view taken along line VI-VI in FIG. Show. The constituents corresponding to the constituents of the above-described embodiment are designated by the same reference numerals.

第三実施例の光デバイス48は第一実施例と同様方向性結
合器型の導波型光スイッチにこの考案を適用した例であ
る。以下、第一実施例と相違する点につき説明し、第一
実施例と同様の点についてはその詳細な説明を省略す
る。
An optical device 48 of the third embodiment is an example in which the present invention is applied to a directional coupler type waveguide type optical switch as in the first embodiment. Hereinafter, differences from the first embodiment will be described, and detailed description of the same points as the first embodiment will be omitted.

第一実施例では電極部材28a、28b直下の領域にも空隙32
を設けたが、この第三実施例では空隙32を電極部材28
a、28bの間に位置するように設け電極部材28a、28b直下
の領域には設けない。
In the first embodiment, voids 32 are also formed in the regions immediately below the electrode members 28a, 28b.
However, in this third embodiment, the void 32 is formed in the electrode member 28.
It is provided so as to be located between a and 28b, and is not provided in the region immediately below the electrode members 28a and 28b.

また第一実施例ではエッチング液注入部36を穴とした
が、この第三実施例では導波路24、26の一方の端部側の
デバイス端面aから導波路24、26の他方の端部側のデバ
イス端面bまで延在するスリット状の溝とし、端面aか
らbまで延在する空隙32を形成する。
In the first embodiment, the etchant injection portion 36 is a hole, but in the third embodiment, the device end face a on one end side of the waveguides 24, 26 to the other end side of the waveguides 24, 26 is used. A slit-shaped groove extending to the device end surface b is formed, and a void 32 extending from the end surface a to b is formed.

第三実施例の光デバイス48も第一実施例と同様にして作
成できる。
The optical device 48 of the third embodiment can also be manufactured in the same manner as in the first embodiment.

この考案は上述した実施例にのみ限定されるものではな
く、従って各構成成分の形状、形成材料、形成方法、作
成手順、配設位置、配設個数及び寸法を任意好適に変更
できる。
The present invention is not limited to the above-described embodiments, and therefore, the shape, forming material, forming method, forming procedure, arrangement position, arrangement number and size of each component can be arbitrarily changed.

例えば基板22の基板面22aとは反対側の基板面に従来と
同様、接地用導電膜体を設けるようにしてもよい。
For example, a grounding conductive film may be provided on the substrate surface of the substrate 22 opposite to the substrate surface 22a, as in the conventional case.

この考案は光スイッチその他の光デバイスに適用でき
る。
The present invention can be applied to optical switches and other optical devices.

(考案の効果) 上述した説明からも明らかなように、この考案の光デバ
イスによれば、導波路が設けられた側の基板面と膜体と
の間に空隙を設けるので、導波路を伝搬してきた光が制
御電極へ吸収されるのを防止できる。空隙は不純物キャ
リアを含まないので、不純物キャリアによる光デバイス
の動作特性の変動特に動作点の変動を招かない。
(Effect of the Invention) As is apparent from the above description, according to the optical device of the present invention, since the gap is provided between the substrate surface on the side where the waveguide is provided and the film body, the waveguide is propagated. The absorbed light can be prevented from being absorbed by the control electrode. Since the voids do not contain impurity carriers, fluctuations in the operating characteristics of the optical device, particularly fluctuations in the operating point, are not caused by the impurity carriers.

また膜体を少なくとも電極間に設けるので、焦電効果に
よる光デバイスの動作特性の変動を防止できる。
Further, since the film body is provided at least between the electrodes, it is possible to prevent the fluctuation of the operating characteristics of the optical device due to the pyroelectric effect.

これがためこの考案によれば、従来よりも動作特性の変
動の少ない光デバイスを提供できる。
Therefore, according to the present invention, it is possible to provide an optical device with less variation in operating characteristics than ever before.

【図面の簡単な説明】[Brief description of drawings]

第1図及び第2図はこの考案の第一実施例の構成を概略
的に示す断面図及び平面図、 第3図(A)〜(G)は第一実施例の作成方法の一例に
つき主要な製造工程段階を示す図、 第4図及び第5図はこの考案の第二実施例の構成を概略
的に示す断面図及び平面図、 第6図及び第7図はこの考案の第三実施例の構成を概略
的に示す断面図及び平面図、 第8図は従来の光デバイスの構成を概略的に示す要部断
面図である。 20、42、48……光デバイス 22……基板、24、26……導波路 28……制御電極、30……膜体 32……空隙、34……支持部。
1 and 2 are a sectional view and a plan view schematically showing the constitution of the first embodiment of the present invention, and FIGS. 3 (A) to (G) show the main part of an example of the production method of the first embodiment. FIGS. 4 and 5 are sectional views and plan views schematically showing the construction of a second embodiment of the present invention, and FIGS. 6 and 7 are third embodiments of the present invention. FIG. 8 is a cross-sectional view and a plan view schematically showing the configuration of an example, and FIG. 8 is a main-portion cross-sectional view schematically showing the configuration of a conventional optical device. 20, 42, 48 …… Optical device 22 …… Substrate, 24, 26 …… Waveguide 28 …… Control electrode, 30 …… Membrane 32 …… Void, 34 …… Support.

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】焦電効果を有する基板に設けた導波路と、
該導波路の屈折率を制御するため前記基板上に設けた制
御電極と、少なくとも制御電極間に設けた膜体とを有し
て成る光デバイスにおいて、 前記導波路が設けられた側の基板面と前記膜体との間に
空隙を設けて成ることを特徴とする光デバイス。
1. A waveguide provided on a substrate having a pyroelectric effect,
In an optical device comprising a control electrode provided on the substrate for controlling the refractive index of the waveguide and a film body provided at least between the control electrodes, the substrate surface on the side where the waveguide is provided An optical device characterized in that an air gap is provided between the film body and the film body.
【請求項2】前記制御電極及び膜体を支えるための支持
部を設けて成ることを特徴とする請求項1に記載の光デ
バイス。
2. The optical device according to claim 1, further comprising a support portion for supporting the control electrode and the film body.
JP13156189U 1989-11-11 1989-11-11 Optical device Expired - Lifetime JPH0736350Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13156189U JPH0736350Y2 (en) 1989-11-11 1989-11-11 Optical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13156189U JPH0736350Y2 (en) 1989-11-11 1989-11-11 Optical device

Publications (2)

Publication Number Publication Date
JPH0369132U JPH0369132U (en) 1991-07-09
JPH0736350Y2 true JPH0736350Y2 (en) 1995-08-16

Family

ID=31679062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13156189U Expired - Lifetime JPH0736350Y2 (en) 1989-11-11 1989-11-11 Optical device

Country Status (1)

Country Link
JP (1) JPH0736350Y2 (en)

Also Published As

Publication number Publication date
JPH0369132U (en) 1991-07-09

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