JPH07326802A - Thermoelectric conversion module and thermoelectric conversion device using the same - Google Patents

Abstract

(57) [Abstract] [Purpose] To provide a thermoelectric conversion module having excellent thermoelectric conversion efficiency and having a small structure that does not use solder. [Constitution] The thermoelectric conversion module includes a pair of conductor plates 1
Lamination of a structure in which an insulator film layer 5 and an N-type semiconductor film layer 4 and a P-type semiconductor film layer 3 in which a plurality of different parts having different compositions are combined are interposed between a and 1b. The block 100 is used as a base. The N-type semiconductor film layer 4 and the P-type semiconductor film layer 3 are electrically connected in series with each other by providing the conductor coupling film layer 2 formed of a conductor on a part of the insulator film layer 5. A part of the plurality of different types of parts is made of thermoelectric conversion element material for high temperature region, and the other part is made of thermoelectric conversion element material for low temperature region. In the N-type semiconductor film layer 4, N ₁ type and N ₂ type are connected, and in the P type semiconductor film layer 3, P ₁ type and P ₂ type are connected.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention uses a N-type semiconductor film and a P-type semiconductor film as thermoelectric conversion elements (thermocouple elements), and a thermoelectric conversion module based on the Seebeck effect and Peltier effect. The present invention relates to a thermoelectric conversion device.

[0002]

2. Description of the Related Art Conventionally, a thermoelectric conversion element utilizing the Seebeck effect for converting heat energy into electric energy and the Peltier effect for converting electric energy into heat energy, and a module thereof have been developed for a long time. In this thermoelectric conversion module, the N-type semiconductor and P
It is based on a structure in which a chip using a die semiconductor as a thermoelectric conversion element material and a metal segment are joined by soldering. This structure, called the π-shape, has remained largely unchanged for decades.

[0003]

In the case of the thermoelectric conversion module having the π-shaped structure described above, many chips and metal segments are joined by solder. However, there is a big problem in performing this solder joining itself. is there. Originally, in solder bonding, after the solder is once solidified, its bonding function is fulfilled at around room temperature. Therefore, for example, in a thermoelectric conversion device using this thermoelectric conversion module, the solder is exposed to high temperature and its structure is There is a risk that the particles become coarse and the thermoelectric conversion efficiency, which is a basic characteristic of the thermoelectric conversion module, is impaired.

That is, in the thermoelectric conversion device, it is necessary to give a large temperature difference to both ends of the elements in the thermoelectric conversion module to enhance the power generation and cooling functions and to operate the thermoelectric conversion module. At this time, Sn and Pb are the main components, and The high temperature side solder part having a composition near these eutectic points is exposed to the temperature just below the melting point for a long time, so that the structure of the solder becomes Sb and Pb.
And 2 are finely dispersed, and the layered structure is likely to be coarsened. Since such coarsening of the solder structure occurs in each bonding layer in the thermoelectric conversion module, a change in shape occurs at the corresponding portion, and uneven thermal shear stress is applied to the thermoelectric conversion element. Become.

When such a thermoelectric conversion module is used, stress concentration occurs in a part of the area, which causes cleavage or destruction of the thermoelectric conversion element itself. Incidentally, in the thermoelectric conversion module, if the number of thermoelectric conversion elements is n, the degree of freedom of each thermoelectric conversion element is 1 /.
Since it is 2n, the greater the number of thermoelectric conversion elements, the higher the probability of cleavage and destruction.

The present invention has been made to solve the above problems, and its technical problem is to provide a thermoelectric conversion module having a small structure which is excellent in thermoelectric conversion efficiency and which does not use solder, and a thermoelectric conversion module using the same. An object is to provide an electric conversion device.

[0007]

According to the present invention, there is provided a laminated block having a structure in which an insulator film layer, an N-type semiconductor film layer and a P-type semiconductor film layer are interposed between a pair of conductor plates facing each other. Using the N-type semiconductor film layer and the P-type semiconductor film layer as a base,
Due to the conductor coupling film layer provided on a part of the insulating film layer, a thermoelectric conversion module electrically coupled in series is obtained.

Further, according to the present invention, in the thermoelectric conversion module, the N-type semiconductor film layer and the P-type semiconductor film layer each include a combination of a plurality of different parts having different compositions. can get.

Further, according to the present invention, in the thermoelectric conversion module, a part of the plurality of different parts is made of a thermoelectric conversion element material for a high temperature region, and the other part is a thermoelectric conversion device for a low temperature region. And a conductor coupling film layer between the N-type semiconductor film layer and the P-type semiconductor film layer, which is made of a thermoelectric conversion element material for a high temperature region among a plurality of different parts, and A thermoelectric conversion module can be obtained in which thermoelectric conversion element materials for the low temperature region are joined together.

In addition, according to the present invention, in any one of the thermoelectric conversion modules described above, the plurality of different portions are formed by grading the respective compositions of the N-type semiconductor film layer and the P-type semiconductor film layer. A thermoelectric conversion module is obtained.

On the other hand, according to the present invention, a plurality of any one of the thermoelectric conversion modules described above are electrically connected in series in a direction in which a pair of conductor plates face each other, and a module connecting direction. High temperature heat transfer means extending in parallel and transferring high temperature heat to the module combination, and low temperature heat transfer extending in parallel to the connection direction of the module combination and transferring low temperature heat to the module combination. A thermoelectric conversion device is obtained that includes means and holding and fixing means for holding and fixing the module assembly between the high temperature heat transfer means and the low temperature heat transfer means.

[0012]

The thermoelectric conversion module of the present invention and the thermoelectric conversion device using the same will be described in detail below with reference to the drawings.

FIG. 1 is a side sectional view showing the basic structure of a thermoelectric conversion module according to an embodiment of the present invention.

This thermoelectric conversion module is a laminated block having a structure in which an insulator film layer 5, an N-type semiconductor film layer 4, and a P-type semiconductor film layer 3 are interposed between a pair of conductor plates 1a and 1b facing each other. The base is 100. That is, in the laminated block 100, the insulator film layer 5, the N-type semiconductor film layer 4, and the P-type semiconductor film layer 3 are laminated on the conductor plate 1a a plurality of times in this order, and the uppermost layer is the insulator film layer 5. After that, this insulator film layer 5
It is configured by stacking a conductor plate 1b on top.

Of these, the N-type semiconductor film layer 4 and the P-type semiconductor film layer 3 are electrically connected to each other by providing the conductor coupling film layer 2 formed of a conductor on a part of the insulator film layer 5. It is connected in series. In addition, the N-type semiconductor film layer 4 and P
Each of the N-type semiconductor film layer 3 and the N-type semiconductor film layer 3 is formed by combining a plurality of heterogeneous portions having different compositions. In the illustrated case, the N-type semiconductor film layer 4 is formed by connecting the N ₁ -type layer and the N ₂ -type layer together. In the type semiconductor film layer 3, the P ₁ type layer and the P ₂ type layer are joined together.

A part of the plurality of different parts is made of a thermoelectric conversion element material such as FeSi ₂ type compound for high temperature region, and the other part is made of thermoelectric conversion material for low temperature region such as Bi ₂ Te ₃ type compound. Made of conversion element material. Therefore, the conductor coupling film layers 2 are formed of thermoelectric conversion element materials for high temperature regions, that is, the P ₁ type layer and the P ₁ type layer between the N type semiconductor film layer 4 and the P type semiconductor film layer 3, respectively. An N ₁ type layer,
Composed of thermoelectric conversion element materials for low temperature regions,
That is, it is formed by combining the P ₂ type layer and the N ₂ type layer.

In this laminated block 100, the conductor plate 1
When a and 1b are used as electrode plates and a suitable high temperature difference is applied from both side surfaces in a direction perpendicular to the extending direction of the electrode plates, desired power is generated in the conductor plates 1a and 1b. In the case of this laminated block 100, the N-type semiconductor film layer 4 and the P-type semiconductor film layer 3
Since the N-type semiconductor film layer 4 and the P-type semiconductor film layer 3 are composed of a combination of a plurality of different kinds of parts having different compositions so as to improve heat transfer, the thermoelectric conversion efficiency is enhanced. Further, in the case of this laminated block 100, since no solder is used at all, when it is applied to a thermoelectric conversion device, the layered structure becomes coarse during use as in the case of a conventional π-shaped thermoelectric conversion module. In addition, no cleavage or destruction occurs, and as a result, the thermoelectric conversion efficiency is less likely to deteriorate. Further, in the case of this laminated block 100, since the chip of the thermoelectric conversion element material is not used, it can be downsized as compared with the conventional π-shaped structure.

In FIG. 1, an example in which the N-type semiconductor film layer 4 and the P-type semiconductor film layer 3 are clearly distinguished, that is, N ₁ -type layer and N-type layer
_{Although the example in which the 2-} type layer, the P ₁ -type layer and the P ₂ -type layer are connected to each other is shown, the composition of each of the N-type semiconductor film layer 4 and the P-type semiconductor film layer 3 may be graded instead. The same effect can be obtained.

FIG. 2 shows a basic structure of a thermoelectric conversion device using the thermoelectric conversion module (laminated block 100) described above. FIG. 2 (a) is a side view and FIG. 2 (b). Is a front view.

In this thermoelectric conversion device, four laminated blocks 100, which are thermoelectric conversion modules, are connected in series in the opposing direction of a pair of conductor plates 1a and 1b, and are arranged in four rows in parallel. Module combination 6 connected in series to
Is used. That is, in this module assembly 6, a total of 28 laminated blocks 100 are used.
Further, in this thermoelectric conversion device, a high temperature heat transfer tube 9 extending in parallel with the coupling direction of the module coupling body 6 and transmitting high temperature heat to the module coupling body 6, and a coupling direction of the module coupling body 6 are provided. A low temperature heat transfer tube 10 is used which extends in parallel and transfers low temperature heat to the module assembly 6.

In this thermoelectric converter, the high temperature heat transfer tube 9
And the low-temperature heat transfer tube 10 includes module fixing plates 12a, 12
module fixing plates 12a, 12b by pressing the fixing screws 7 to the pair of insulating plates 13a, 13b through the module fixing plates 12a, 12b using a total of 16 fixing screws 7. The module assembly 6 is fixed between the pair of electrode plates 8a and 8b in between. In addition, by using a total of four nuts 11 to crimp each module fixing support rod 14a, 14b through each module fixing plate 12a, 12b, a pair of module fixing plates are fixed between the four corners of the pair of module fixing plates 12a, 12b. The support rods 14a and 14b are fixed.

Here, the module fixing plates 12a and 12
b, fixing screw 7, module fixing support rods 14a and 14
The b and the nut 11 function as a holding and fixing means for holding and fixing the module assembly 6 between the high temperature heat transfer tube 9 and the low temperature heat transfer tube 10.

This thermoelectric converter functions as a relatively small thermoelectric generator, but when a larger thermoelectric generator is constructed, the thermoelectric converter is used as a basic subunit to form a plurality of subunits. Both electrodes 8a and 8b may be directly coupled and assembled. However, since each subunit has high thermoelectric conversion efficiency, it is preferable to use a connecting wire having a large wire diameter for connecting between the subunits. This is because if a thin coupling wire is used as in the case of configuring a large conventional thermoelectric conversion device (a thermoelectric conversion device using a conventional thermoelectric conversion module is a basic subunit), the internal resistance inside the device Is increased, resulting in a decrease in power generation efficiency.

[0024]

As described above, according to the present invention, an N-type semiconductor film in which a plurality of different parts having different compositions are combined between a pair of conductor plates to improve heat transfer and an insulator film layer. Since the thermoelectric conversion module is configured without using solder by using the laminated block having a structure in which the layers and the P-type semiconductor film layer are interposed as a base, the thermoelectric conversion efficiency is improved as compared with the conventional thermoelectric conversion module. In addition, the characteristics are not easily deteriorated, and the durability becomes excellent. Even when the thermoelectric conversion device is configured, the layered structure is not coarsened or cleaved or destroyed unlike the case of using the conventional thermoelectric conversion module, and the thermoelectric conversion efficiency is significantly improved. To do. Further, when the thermoelectric power generation device is configured by using this thermoelectric conversion device as a basic sub unit, the thermoelectric conversion efficiency of each sub unit is high, so that a desired high electric power can be stably obtained.

[Brief description of drawings]

FIG. 1 is a side sectional view showing a basic configuration of a thermoelectric conversion module according to an embodiment of the present invention.

2 shows a basic configuration of a thermoelectric conversion device using the thermoelectric conversion module shown in FIG. 1, (a) is a side view, and (b) is a front view.

[Explanation of symbols]

 1a, 1b Conductor plate 2 Conductor coupling film layer 3 P-type semiconductor film layer 4 N-type semiconductor film layer 5 Insulator film layer 6 Module coupling body 7 Fixing screw 8a, 8b Electrode plate 9 High temperature heat transfer tube 10 Low temperature heat transfer tube 11 Nuts 12a, 12b Module fixing plates 13a, 13b Insulating plates 14a, 14b Module fixing support rods 100 Laminated blocks

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tanji Kojinori 7-1, Koriyama, Taichiro-ku, Sendai-shi, Miyagi Tokin Co., Ltd. (72) Inventor Ken Masumoto 3--8, Uesugi, Aoba-ku, Sendai-shi, Miyagi 22 (72) Inventor Minoru Kubogi 4-6-3 Kamo, Izumi-ku, Sendai-shi, Miyagi (72) Inventor Takejiro Kaneko 3-13-8, Asahigaoka, Aoba-ku, Sendai-shi, Miyagi (72) Inventor, Risaburo Sato 3-7-15 Hachiman, Aoba-ku, Sendai City, Miyagi Prefecture

Claims (5)

[Claims] 1. A laminated block having a structure in which an insulator film layer, an N-type semiconductor film layer, and a P-type semiconductor film layer are interposed between a pair of conductor plates facing each other as a base, and the N-type semiconductor film layer and the N-type semiconductor film layer are provided. The thermoelectric conversion module, wherein the P-type semiconductor film layers are electrically coupled in series with each other by a conductor coupling film layer provided on a part of the insulator film layer. 2. The thermoelectric conversion module according to claim 1, wherein each of the N-type semiconductor film layer and the P-type semiconductor film layer is composed of a combination of a plurality of different parts having different compositions. Thermoelectric conversion module. 3. The thermoelectric conversion module according to claim 2, wherein a part of the plurality of different parts is made of a thermoelectric conversion element material for a high temperature region, and the other part is a thermoelectric conversion device for a low temperature region. The conductor coupling film layer is made of a material,
Between the N-type semiconductor film layer and the P-type semiconductor film layer, between the plurality of different portions, those made of thermoelectric conversion element material for the high temperature region, and heat for the low temperature region. A thermoelectric conversion module comprising a combination of materials made of an electric conversion element material. 4. The thermoelectric conversion module according to claim 2, wherein the plurality of different parts are formed by grading the respective compositions of the N-type semiconductor film layer and the P-type semiconductor film layer. A thermoelectric conversion module characterized in that 5. A module combination body in which a plurality of thermoelectric conversion modules according to any one of claims 1 to 4 are electrically connected in series in an opposing direction of the pair of conductor plates, and the module combination body. High temperature heat transfer means extending parallel to the coupling direction of the module and transmitting high temperature heat to the module combination, and extending parallel to the coupling direction of the module combination to transmit low temperature heat to the module combination. A thermoelectric converter comprising: a low temperature heat transfer means for transferring and a holding and fixing means for holding and fixing the module combination between the high temperature heat transfer means and the low temperature heat transfer means.