JPH07323387A - Mask for laser marking and its production - Google Patents
Mask for laser marking and its productionInfo
- Publication number
- JPH07323387A JPH07323387A JP6118639A JP11863994A JPH07323387A JP H07323387 A JPH07323387 A JP H07323387A JP 6118639 A JP6118639 A JP 6118639A JP 11863994 A JP11863994 A JP 11863994A JP H07323387 A JPH07323387 A JP H07323387A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- scattering
- glass substrate
- laser marking
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010330 laser marking Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000011521 glass Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 230000001154 acute effect Effects 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 8
- 239000005357 flat glass Substances 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Optical Elements Other Than Lenses (AREA)
- Laser Beam Processing (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は金属板及び樹脂表面等の
被加工物にレーザ光を照射して文字や図形をマーキング
するレーザマーキング装置で使用されるマスク及びこの
レーザマーキング用マスクの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask used in a laser marking device for marking a character or a figure by irradiating a work such as a metal plate or a resin surface with a laser beam, and a method for manufacturing the laser marking mask. Regarding
【０００２】[0002]
【従来の技術】レーザマーキング装置に使用されるマス
クとしては、金属板にパターンを穴開けによって形成し
たものや、透明ガラス基板に金属膜例えばＡｌを蒸着し
たもの、又は透明ガラス基板にエッチングによってクモ
リ状の散乱部分でパターンを形成したものなどが存在す
る。しかしながら、金属板のマスクは穴開けという加工
法により複雑なパターンは形成することができず、透明
ガラス基板では該ガラス基板の表面に蒸着した金属膜が
レーザ光のエネルギーで損傷する問題点を有し、エッチ
ングによるクモリ状の散乱部分では遮光が不十分である
などの欠点を有する。2. Description of the Related Art As a mask used in a laser marking apparatus, a mask formed by punching a pattern on a metal plate, a metal film such as Al vapor-deposited on a transparent glass substrate, or a mask by etching a transparent glass substrate. There are those in which a pattern is formed by the scattered portions of the shape. However, a mask of a metal plate cannot form a complicated pattern by a processing method of punching, and a transparent glass substrate has a problem that a metal film deposited on the surface of the glass substrate is damaged by energy of laser light. However, there is a defect that the light shielding is insufficient at the cloud-like scattering portion due to etching.
【０００３】そして、上述した透明ガラス基板によるク
モリ状の散乱部分における遮光の欠点を解決する手段と
して、透明ガラス基板の表裏両面にクモリ状の散乱部分
によるパターンを形成することで遮光効果を高めるよう
にしたものが特開昭６２−２４８５９０号として提案さ
れている。Then, as a means for solving the above-mentioned light shielding defect in the cloud-like scattering portion by the transparent glass substrate, a pattern of the cloud-like scattering portion is formed on both front and back surfaces of the transparent glass substrate to enhance the light shielding effect. Japanese Patent Application Laid-Open No. 62-248590 has been proposed.
【０００４】[0004]
【発明が解決しようとする課題】透明ガラス基板の表裏
両面にクモリ状の散乱部分を形成したものは前述した金
属板のマスクが有する複雑なパターンの形成が困難であ
るといった問題点、及び透明ガラス基板への金属膜蒸着
によるマスクが有する耐久性の問題点はいずれも解消さ
れるが、同一のパターンを透明ガラス基板の表と裏に位
置合わせして形成しなければならない為、その位置合わ
せの困難さ、及びそれに伴い作成に時間を要し、コスト
高になるといった問題点を有する。又、レーザ光は位相
の揃った平行光であるが、マスクを透過する際に多少屈
折または回折現象を起こし、両面クモリ状散乱のマスク
では裏または表のどちらかの像が僅かにズレてしまい、
パターンの輪郭が不鮮明（ピンボケ）になる恐れも考え
られる。A transparent glass substrate having a cloud-like scattering portion formed on both front and back surfaces has a problem that it is difficult to form a complicated pattern of the above-described metal plate mask, and transparent glass. Although the problems of durability of the mask due to the metal film deposition on the substrate are solved, the same pattern must be formed by aligning the front and back of the transparent glass substrate. There is a problem in that it is difficult, and accordingly, it takes time to create it and the cost becomes high. Although the laser light is parallel light with the same phase, it slightly refracts or diffracts when passing through the mask, and a mask with double-sided cloudy scattering causes a slight misalignment of either the back or front image. ,
The contour of the pattern may be unclear (out of focus).
【０００５】本発明は上述したような従来の技術が有す
る問題点に鑑みてなされたもので、その目的とするとこ
ろは、透明ガラス基板の片面のみにクモリ状散乱部分に
よるパターンを形成することで、十分にレーザ光を遮光
できるマスク、及びそのマスクを製造する方法を提供す
ることにある。The present invention has been made in view of the problems of the above-mentioned conventional techniques, and an object thereof is to form a pattern by a cloud-like scattering portion on only one surface of a transparent glass substrate. A mask capable of sufficiently shielding laser light, and a method for manufacturing the mask are provided.
【０００６】[0006]
【課題を解決するための手段】上記した目的を達成する
為に本発明が講じた技術的手段は、透明ガラス基板にレ
ーザ光を透過する透明部分とレーザ光を散乱する散乱部
分より形成されたパターンを有するレーザマーキング用
マスクにおいて、前記散乱部分を透明ガラス基板の片面
のみに形成すると共に、その散乱部分の表面形状は鋭角
な山形の凹凸面とし、その鋭角な山形の凸部は単位面積
当たり１×105 個/ mm2 〜２×105 個/mm2 の割合で形
成されていることを特徴とする。Means for Solving the Problems The technical means taken by the present invention to achieve the above-mentioned object is formed by a transparent portion which transmits laser light and a scattering portion which scatters laser light on a transparent glass substrate. In the mask for laser marking having a pattern, the scattering portion is formed only on one surface of the transparent glass substrate, and the surface shape of the scattering portion is an acute angle-shaped uneven surface, and the acute angle-shaped convex portion is per unit area. It is characterized by being formed at a rate of 1 × 10 5 pieces / mm 2 to 2 × 10 5 pieces / mm 2 .
【０００７】上記散乱部分を構成する鋭角な山形の凹凸
面は、鋭角な山形をした凸部の高さが１〜10μｍ、ピッ
チが0.5 〜５μｍの凹凸からなることが望ましい。即
ち、光の入射角が鋭角になると臨界角以上ではガラス表
面に入射した光は透過せず屈折と反射を繰り返す。レー
ザ光（ YAGレーザ）の波長はλ1.06μｍであり、凹凸面
を構成する山から谷における斜面に、レーザ光が入射す
る場合、その斜面はより鋭角でより広い面積が必要であ
り、もし斜面が緩くまたは面積が小さい場合は平面と同
様に光が垂直に入射し透過する。It is desirable that the acute angled concavo-convex surface forming the scattering portion is composed of concavo-convex portions having a height of 1 to 10 μm and a pitch of 0.5 to 5 μm. That is, when the incident angle of light becomes an acute angle, the light incident on the glass surface is not transmitted and refraction and reflection are repeated at a critical angle or more. The wavelength of the laser light (YAG laser) is λ1.06μm, and when the laser light is incident on the slopes in the peaks and valleys that make up the uneven surface, the slopes need to be sharper and have a larger area. When is small or has a small area, light is incident vertically and is transmitted as is the case with a flat surface.
【０００８】又、上記したレーザマーキング用マスクの
透明ガラス基板としては白板ガラス、石英ガラスのいず
れでも良く、石英ガラスを透明ガラス基板として用いた
場合は次のような製造方法を採用する。即ち、石英ガラ
スは白板ガラスに比べエッチングスピードが遅く、白板
ガラスと同じエッチング条件（白板ガラスと同じレジス
ト膜）ではパターン輪郭部がエッチング液に破壊されて
しまう。その為に、石英ガラスの表面に金属膜を蒸着
し、その上に通常のレジスト膜を付けて二層積層構造の
保護膜とし、且つエッチング液に対するガラスの粉の溶
解を低温で行い、エッチング時間は５〜 120秒として少
なくとも３回以上行う。石英ガラスの表面に蒸着する金
属膜としてはクロム膜等が挙げられる。The transparent glass substrate of the above laser marking mask may be either white plate glass or quartz glass. When quartz glass is used as the transparent glass substrate, the following manufacturing method is adopted. That is, quartz glass has a slower etching speed than white plate glass, and the pattern contour portion is destroyed by the etching solution under the same etching conditions as white plate glass (the same resist film as white plate glass). Therefore, a metal film is vapor-deposited on the surface of quartz glass, and a normal resist film is attached on top of it to form a protective film with a two-layer laminated structure, and the glass powder is dissolved in the etching solution at a low temperature and the etching time Is 5 to 120 seconds and is performed at least 3 times or more. Examples of the metal film deposited on the surface of the quartz glass include a chromium film.
【０００９】[0009]
【作用】上記の手段によれば、請求項１に記載のレーザ
マーキング用マスクは透明ガラス基板の片面にのみレー
ザ光の遮光効果がある散乱部が形成されているため、パ
ターン（像）のズレが発生することはなく、それによっ
てピンボケの発生を防止でき、パターンの輪郭を鮮明に
マーキングすることが可能となる。According to the above means, since the mask for laser marking according to claim 1 has the scattering portion having the effect of shielding the laser beam formed on only one surface of the transparent glass substrate, the deviation of the pattern (image) is caused. The occurrence of defocusing can be prevented, and the contour of the pattern can be clearly marked.
【００１０】又、散乱部分を構成する山形の凸部を請求
項２に記載したように凸部の高さが１〜10μｍ、ピッチ
が0.5 〜５μｍとした場合は、光の入射角が凹凸を構成
する山から谷における斜面に対し、鋭角になりガラス表
面に入射した光は透過せず屈折と反射を繰り返し、片面
の散乱部分で十分な遮光効果が発揮される。When the height of the projections is 1 to 10 μm and the pitch is 0.5 to 5 μm, the angle of incidence of light is uneven. Light incident on the glass surface at an acute angle with respect to the slopes in the peaks and valleys that are formed does not pass through but is repeatedly refracted and reflected, and a sufficient light-shielding effect is exhibited at the scattering portion on one side.
【００１１】更に、上記したレーザマーキング用マスク
の製造方法にあっては石英ガラスの表面に金属膜と通常
のレジスト膜を積層した保護膜を形成してエッチング処
理するため、パターン輪郭部がエッチング液で破壊され
ることはなく、パターンの輪郭部を鮮明に現出でき、且
つ散乱部分を目的の遮光効果が発揮される状態に加工す
ることができる。Further, in the above-mentioned method for manufacturing the laser marking mask, since the protective film in which the metal film and the ordinary resist film are laminated is formed on the surface of the quartz glass and the etching process is carried out, the pattern contour portion has an etching solution. Therefore, the contour portion of the pattern can be clearly revealed, and the scattering portion can be processed into a state in which the desired light shielding effect is exhibited.
【００１２】[0012]
【実施例】以下、本発明の実施例を図面に基づき説明す
ると、図１はレーザマーキング用マスクＡの断面図で、
透明ガラス基板１の一側表面（図面では上面側）に、レ
ーザ光を透過する透過部分２とレーザ光を散乱する散乱
部分３より形成される文字、絵柄、記号等のパターン４
が形成されている。上記のレーザマーキング用マスクを
構成する透明ガラス基板１としては石英ガラス、白板ガ
ラス等一般のガラス全てが適用でき、それら基板にエッ
チング加工によって文字、記号，絵柄等のパターン４以
外の部分が散乱部分３としてクモリガラス状に形成され
ている。文字、記号、絵柄等のパターン４に対応した透
過部分２は研磨等して鏡面状態とし、それによりこの透
過部分２を透過するレーザ光はそのエネルギーが減衰し
ないようになっている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a mask A for laser marking.
A pattern 4 such as a character, a picture, or a symbol formed by a transparent portion 2 that transmits laser light and a scattering portion 3 that scatters laser light on one surface (the upper surface side in the drawing) of the transparent glass substrate 1.
Are formed. As the transparent glass substrate 1 which constitutes the above laser marking mask, all of ordinary glass such as quartz glass and white plate glass can be applied, and the portions other than the pattern 4, such as letters, symbols and pictures, are scattered by etching the substrate. 3 is formed in a cloud glass shape. The transparent portion 2 corresponding to the pattern 4 such as characters, symbols, and patterns is polished to a mirror surface state, so that the energy of the laser light transmitted through the transparent portion 2 is not attenuated.
【００１３】上記散乱部分３の表面形状は鋭角な山形の
凹凸面とし、その凹凸面は鋭角な山形の凸部3aと鋭角で
深い谷3bとによって面粗さが大きく形成されている。そ
の面粗さの大きさとしては、YAG レーザの波長はλ1.06
μｍであり、凹凸面を構成する山から谷における斜面
に、レーザ光が入射する場合、その斜面はより鋭角でよ
り広い面積が必要であり、もし斜面が緩くまたは面積が
小さい場合は平面と同様に光が垂直に入射し透過する。
即ち、表面粗さがλ/2（1.06/2）以下の場合、YAG レー
ザは鏡面と同様に透過し減衰しない。The surface shape of the scattering portion 3 is an acute angled concavo-convex surface, and the concavo-convex surface is formed with a large surface roughness by the acute angled convex portion 3a and the acute deep valley 3b. As for the surface roughness, the YAG laser wavelength is λ1.06.
μm, and when the laser light is incident on the slopes in the peaks and valleys that form the uneven surface, the slopes need to have a sharper angle and a larger area. If the slopes are loose or have a small area, they are the same as the flat surface. The light is vertically incident on and transmitted.
That is, when the surface roughness is λ / 2 (1.06 / 2) or less, the YAG laser transmits like the mirror surface and is not attenuated.
【００１４】従って、上記した凹凸面は鋭角な山形をし
た凸部3aの高さが１〜10μｍ、ピッチが0.5 〜５μｍの
凹凸からなることが望ましく、凸部3aは単位面積当たり
１×105 個/ mm2 〜２×105 個/ mm2 の割合とする。Therefore, it is desirable that the above-mentioned uneven surface is made up of projections and depressions 3a having an acute angle and having a height of 1 to 10 μm and a pitch of 0.5 to 5 μm. The projections 3a are 1 × 10 5 per unit area. The ratio is from pieces / mm 2 to 2 × 10 5 pieces / mm 2 .
【００１５】次に上述したレーザマーキング用マスクの
製造方法について図３に示すパターニングフローに基づ
き説明すると、マスクの母体となる透明ガラス基板１と
して石英ガラスを用い、その石英ガラスの表面にクロム
膜５（1500オングストローム程度）を蒸着し、その上に
通常のレジスト膜６（膜厚８〜10μｍ）を塗布形成す
る。（図３(a) 参照）次にプレベイク（90℃、30分）を
行い、その後で図３(b) に示す露光処理、図３(c) に示
す現像処理を行い、更にポストベイク（ 140℃、30分）
を行った後、クロムエッチ処理（常温、５分）を行い、
次に図３(d) に示すクモリガラス状とするエッチング処
理を行う。図３(e) はそのエッチング処理で形成された
パターン４を示す平面図で、透過部分２はパターン４に
相当し、その透過部分２の周囲には鋭角な山形の凹凸面
で構成された散乱部分３が形成されている。Next, a method for manufacturing the above-mentioned laser marking mask will be described based on the patterning flow shown in FIG. 3. Quartz glass is used as the transparent glass substrate 1 which is the base of the mask, and the chromium film 5 is formed on the surface of the quartz glass. (About 1500 angstrom) is vapor-deposited, and a normal resist film 6 (film thickness 8 to 10 μm) is formed thereon by coating. (See FIG. 3 (a)) Next, pre-bake (90 ° C., 30 minutes), followed by exposure treatment shown in FIG. 3 (b) and development treatment shown in FIG. 3 (c), and post bake (140 ° C.). ,Half an hour)
After that, chrome etching treatment (normal temperature, 5 minutes) is performed.
Next, an etching process for forming a cloud glass as shown in FIG. 3 (d) is performed. FIG. 3 (e) is a plan view showing the pattern 4 formed by the etching process, in which the transparent portion 2 corresponds to the pattern 4, and scattering around the transparent portion 2 is formed by an acute angle-shaped uneven surface. The part 3 is formed.
【００１６】石英ガラスは白板ガラスに比べ非常にエッ
チングスピードが遅く、白板ガラスと同じエッチング条
件ではくもらせることは出来ない。その石英ガラスのエ
ッチング条件は下記の通りである。 (1) 35℃のエッチング液にガラスの粉を10g/100cc の比
率で加える。 (2) ５分後液温を45℃に調整する。 (3) エッチング （10〜 120sec ）、リンス、エアーパ
ージ (4) 上記のエッチングを５回繰り返す。Quartz glass has a much slower etching speed than white plate glass, and cannot be fogged under the same etching conditions as white plate glass. The etching conditions for the quartz glass are as follows. (1) Add glass powder to the etching solution at 35 ℃ at a ratio of 10g / 100cc. (2) After 5 minutes, adjust the liquid temperature to 45 ° C. (3) Etching (10 to 120 sec), rinse, air purge (4) The above etching is repeated 5 times.
【００１７】上記したエッチング条件で白板ガラスとの
大きな違いは、エッチングの浸漬時間と温度及びガラス
の粉の溶解方法にある。即ち、白板ガラスの場合、ガラ
スの粉を高温（65℃）で溶解し、その時発生する反応温
度が低下する頃（約10分後、40℃まで液温を冷却）か
ら、エッチングを開始するのに対し、石英ガラスの場合
はガラスの粉を低温で溶解（35℃）し、直ちにエッチン
グを開始する。その時ガラスの粉は徐々に溶解し、エッ
チング液温は上昇してくる。エッチング時間は、各回数
とも５〜 120sec とする。又、ガラスの粉の反応温度
は、直接は100 ℃以上になっており、石英ガラス表面で
ガラスの粉が溶解し、局部的には高温でガラス表面と接
触していると考えられる。そのためガラスの粉が完全に
溶けてしまうと、それ以降均一なクモリは得られない。
（エッチング開始からおよそ20分）そして、エッチング
時間を５〜 120sec として少なくとも３回繰り返すと、
ガラス表面の凹凸が鋭角となり、しかも凸部の高さは１
〜10μｍとなり目的の散乱効果が発揮されるマスクが得
られる。The major differences from the white plate glass under the above etching conditions are the immersion time and temperature of etching, and the method of melting glass powder. That is, in the case of white plate glass, the glass powder is melted at a high temperature (65 ° C.), and the etching is started when the reaction temperature generated at that time is lowered (after about 10 minutes, the liquid temperature is cooled to 40 ° C.). On the other hand, in the case of quartz glass, glass powder is melted at a low temperature (35 ° C) and etching is immediately started. At that time, the glass powder gradually dissolves, and the etching solution temperature rises. The etching time is 5 to 120 seconds for each time. Moreover, the reaction temperature of the glass powder is directly above 100 ° C., and it is considered that the glass powder melts on the surface of the quartz glass and locally contacts the glass surface at a high temperature. Therefore, if the glass powder is completely melted, a uniform cloud cannot be obtained thereafter.
(Approximately 20 minutes from the start of etching) Then, when the etching time is 5 to 120 seconds and repeated at least three times,
The unevenness of the glass surface becomes an acute angle, and the height of the convex part is 1
A mask having a thickness of up to 10 μm and exhibiting the desired scattering effect can be obtained.
【００１８】図２はレーザマーキング用マスクＡを用い
たレーザーマーキング装置の概略を示すもので、光源と
してレーザー光（YAG λ1.06μｍ）を使用し、文字や図
形（パターン）のみを光が通るように作られているマス
クＡを透過した光をレンズ７により結像してワーク８表
面に照射する。この時ワーク表面は瞬時に高温となり、
表層の数μｍのみが吹き飛ばされて前記マスクＡに形成
されたパターン４がマーキングされる。マスクの透過す
る表面は鏡面になっているのに対し、遮光する表面は均
一で微細な凹凸のクモリガラス状になっており、レーザ
ー光を凹凸表面で屈折または反射し、エネルギーを分散
させてしまう。FIG. 2 shows an outline of a laser marking apparatus using a laser marking mask A. A laser beam (YAG λ1.06 μm) is used as a light source so that the light passes through only characters and figures (patterns). The light that has passed through the mask A made in (1) is imaged by the lens 7 and irradiated on the surface of the work 8. At this time, the work surface instantly becomes hot,
Only a few μm of the surface layer is blown off and the pattern 4 formed on the mask A is marked. The transparent surface of the mask is a mirror surface, while the light-shielding surface is a uniform and fine uneven cloud glass shape, and the laser light is refracted or reflected on the uneven surface to disperse energy.
【００１９】[0019]
【発明の効果】本発明の請求項１に記載されたレーザマ
ーキング用マスクは以上詳述したように、透明ガラス基
板にレーザ光を透過する透明部分とレーザ光を散乱する
散乱部分より形成されたパターンを有するレーザマーキ
ング用マスクにおいて、散乱部分を透明ガラス基板の片
面のみに形成すると共に、その散乱部分の表面形状は鋭
角な山形の凹凸面とし、その鋭角な山形の凸部は単位面
積当たり１×105 個/ mm 2 〜２×105 個/ mm2 の割合で
形成したものであるから、片面の散乱部分で十分にレー
ザ光の遮光効果を発揮することができる。これにより、
パターンの鮮明な微細加工が出来、納期を短縮し、価格
を安くすることができる。The laser device according to the first aspect of the present invention.
As mentioned above, the mask for baking is made of transparent glass.
The transparent part that transmits the laser beam to the plate and the laser beam is scattered
A laser marquee with a pattern formed from scattered parts.
In the mask for masking, the scattering part is a piece of transparent glass substrate.
It is formed only on the surface and the surface shape of the scattering part is sharp.
An angled mountain-shaped uneven surface is used, and the acute angled mountain-shaped convex portion
1 x 10 per productFivePieces / mm 2~ 2 x 10FivePieces / mm2In proportion
Since it was formed, the scattering part on one side is enough
The light shielding effect can be exerted. This allows
Clear fine pattern processing is possible, shortening the delivery time, and price
Can be cheaper.
【００２０】又、請求項２に示すように散乱部分の表面
形状を、山形の凸部の高さが１〜10μｍ、、ピッチが0.
5 〜５μｍの凹凸面とした場合は、ガラス表面に入射し
た光は透過せず、屈折と反射を繰り返し、確実な遮光効
果を発揮することができる。Further, as described in claim 2, the surface shape of the scattering portion is such that the height of the mountain-shaped convex portion is 1 to 10 μm, and the pitch is 0.
When the uneven surface has a size of 5 to 5 μm, the light incident on the glass surface is not transmitted and refraction and reflection are repeated, so that a reliable light shielding effect can be exhibited.
【００２１】上述したレーザマーキング用マスクの製造
方法として請求項３及び請求項４に示した方法とした場
合は、石英の過酷なエッチングにも耐えてパターン輪郭
部を鮮明に形成することができる。When the method for manufacturing the above-mentioned laser marking mask is the method described in claims 3 and 4, it is possible to endure the severe etching of quartz and form the pattern contour portion clearly.
【図１】本発明に係るレーザマーキング用マスクの実施
例を示す縦断面図である。FIG. 1 is a vertical sectional view showing an embodiment of a laser marking mask according to the present invention.
【図２】レーザマーキング用マスクを使用したマーキン
グ装置の概略を示す説明図である。FIG. 2 is an explanatory diagram showing an outline of a marking device using a laser marking mask.
【図３】マスクの製造方法を示す工程説明図である。3A to 3C are process explanatory views showing a mask manufacturing method.
Ａ…レーザマーキング用マスク １…透明ガラス基板 ２…透明部分 ３…散乱部分 ４…パターン ５…クロム膜 ６…レジスト膜 A ... Mask for laser marking 1 ... Transparent glass substrate 2 ... Transparent part 3 ... Scattering part 4 ... Pattern 5 ... Chrome film 6 ... Resist film
Claims (4)
明部分とレーザ光を散乱する散乱部分より形成されたパ
ターンを有するレーザマーキング用マスクにおいて、前
記散乱部分を透明ガラス基板の片面のみに形成すると共
に、その散乱部分の表面形状は鋭角な山形の凹凸面と
し、その鋭角な山形の凸部は単位面積当たり１×105 個
/ mm2 〜２×105 個/ mm2 の割合で形成されていること
を特徴とするレーザマーキング用マスク。1. A laser marking mask having a pattern formed of a transparent portion for transmitting laser light and a scattering portion for scattering laser light on a transparent glass substrate, wherein the scattering portion is formed on only one surface of the transparent glass substrate. At the same time, the surface shape of the scattering part is an acute angle-shaped uneven surface, and the acute angle-shaped convex parts are 1 × 10 5 per unit area.
A mask for laser marking, characterized in that it is formed at a ratio of / mm 2 to 2 × 10 5 pieces / mm 2 .
の高さが１〜10μｍ、ピッチが0.5 〜５μｍの凹凸から
なることを特徴とする請求項１記載のレーザマーキング
用マスク。2. The mask for laser marking according to claim 1, wherein the surface shape of the scattering portion is unevenness with a mountain-shaped convex portion having a height of 1 to 10 μm and a pitch of 0.5 to 5 μm.
明部分とレーザ光を散乱する散乱部分よりなるパターン
をエッチングで形成するにあたり、石英ガラス基板の表
面に金属膜、更にその上にレジスト膜を積層形成して保
護膜とし、且つエッチング液に対するガラスの粉の溶解
を低温で行い、エッチング時間は５〜 120秒として少な
くとも３回以上繰り返すことを特徴とするレーザマーキ
ング用マスクの製造方法。3. A metal film is formed on the surface of the quartz glass substrate, and a resist film is further formed on the surface of the quartz glass substrate when etching is performed to form a pattern of a transparent portion transmitting the laser light and a scattering portion scattering the laser light on the quartz glass substrate. A method for producing a mask for laser marking, comprising forming a protective film by laminating, melting glass powder in an etching solution at a low temperature, and repeating at least three times with an etching time of 5 to 120 seconds.
項３記載のレーザマーキング用マスクの製造方法。4. The method for manufacturing a laser marking mask according to claim 3, wherein the metal film is a chromium vapor deposition film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6118639A JPH07323387A (en) | 1994-05-31 | 1994-05-31 | Mask for laser marking and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6118639A JPH07323387A (en) | 1994-05-31 | 1994-05-31 | Mask for laser marking and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07323387A true JPH07323387A (en) | 1995-12-12 |
Family
ID=14741524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6118639A Pending JPH07323387A (en) | 1994-05-31 | 1994-05-31 | Mask for laser marking and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07323387A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7105281B2 (en) | 2001-10-29 | 2006-09-12 | Sumitomo Electric Industries, Ltd. | Method for manufacturing metal microstructure |
| WO2007062130A1 (en) * | 2005-11-22 | 2007-05-31 | J.P. Sercel Associates Inc. | System and method for laser machining of three-dimensional structures |
| CN101990479A (en) * | 2008-03-18 | 2011-03-23 | 万佳雷射有限公司 | Method and apparatus for laser processing the surface of a drum |
| JP2011109073A (en) * | 2009-11-16 | 2011-06-02 | Samsung Mobile Display Co Ltd | Laser mask, and sequential lateral solidification method using the same |
| US8785081B2 (en) | 2010-02-11 | 2014-07-22 | Samsung Display Co., Ltd. | Mask for laser induced thermal imaging and method of fabricating organic electro-luminescence display device using the same |
| US10488749B2 (en) * | 2017-03-28 | 2019-11-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photomask and method of forming the same |
-
1994
- 1994-05-31 JP JP6118639A patent/JPH07323387A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7105281B2 (en) | 2001-10-29 | 2006-09-12 | Sumitomo Electric Industries, Ltd. | Method for manufacturing metal microstructure |
| US7338753B2 (en) | 2001-10-29 | 2008-03-04 | Sumitomo Electric Industries, Ltd. | Method for manufacturing metal microstructure |
| EP1440931A4 (en) * | 2001-10-29 | 2008-03-26 | Sumitomo Electric Industries | PROCESS FOR PRODUCING METALLIC MICROSTRUCTURE |
| WO2007062130A1 (en) * | 2005-11-22 | 2007-05-31 | J.P. Sercel Associates Inc. | System and method for laser machining of three-dimensional structures |
| US8552338B2 (en) | 2005-11-22 | 2013-10-08 | Ipg Microsystems Llc | System and method for laser machining of three-dimensional structures |
| CN101990479A (en) * | 2008-03-18 | 2011-03-23 | 万佳雷射有限公司 | Method and apparatus for laser processing the surface of a drum |
| JP2011109073A (en) * | 2009-11-16 | 2011-06-02 | Samsung Mobile Display Co Ltd | Laser mask, and sequential lateral solidification method using the same |
| US8785081B2 (en) | 2010-02-11 | 2014-07-22 | Samsung Display Co., Ltd. | Mask for laser induced thermal imaging and method of fabricating organic electro-luminescence display device using the same |
| US10488749B2 (en) * | 2017-03-28 | 2019-11-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photomask and method of forming the same |
| US11281091B2 (en) | 2017-03-28 | 2022-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photomask |
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