JPH0729942A - Repair method for electronic device - Google Patents

Abstract

(57) [Summary] [Purpose] In an electronic device in which a semiconductor chip or the like is mounted on a substrate and the chip or the like is connected to the substrate by wire bonding, if the chip or the like is defective,
Remove this and mount a new chip securely. [Structure] The wire 30 is cut at its neck portion 31 to remove the chip 20 from the substrate 10 (). The wire residue 32 remaining on the board-side pad 11 is processed so that its upper surface becomes flat (), and the surfaces of the wire residue 33 and the board-side pad 11 are irradiated with a laser 41 to clean them (). After that, a new chip is fixed on the substrate 10, and the pad of this chip and the substrate-side pad 11 on which the flattened wire residue 33 remains are connected by a new wire.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic device in which semiconductor chips and various devices (for example, liquid crystal display devices) are mounted on a substrate, and the semiconductor chip and the substrate are electrically connected by wire bonding. Repair method.

[0002]

2. Description of the Related Art Wire bonding is the most popular connection technology as an assembly technology for semiconductor modules or semiconductor packages. However, since it is a solid-state joining method, the joining property and joining quality depend on the surface state of the materials to be joined, that is, the presence or absence of an oxide film, the presence or absence of adsorption / adhesion of organic substances / inorganic substances / water, surface roughness and It is strongly affected by hardness. Therefore, the semiconductor chips, devices,
We strictly control the final treatment and storage method of wiring boards, lead frames, etc., and pay close attention to prevent their surfaces from being contaminated with bonding inhibitors and from growing thick oxide films.

Conventional products are mainly single-chip packages in which one semiconductor chip is built in the package, and when a defective connection or the like occurs, the entire product is discarded. By the way, as a recent situation, high-density mounting technology is required to achieve high functionality and high performance of electronic devices,
Necessity of a multi-chip module in which a plurality of semiconductor chips are mounted on one substrate (described in Technical Report of the Institute of Electronics, Information and Communication Engineers Vol. 92, No. 365, page 37).
Is increasing. Since such a multi-chip module is expensive, if the module becomes defective due to the defect of one chip, immediately discarding the whole module causes a great cost loss. Therefore, replacement of defective chips is an indispensable technique for putting a multichip module into practical use.

Generally, as a technique for electrically connecting a chip to a substrate or the like, there are tape carrier bonding (TAB), Philip chip bonding, etc. in addition to the above-mentioned wire bonding. Among these bonding techniques, as to the technique for repairing the chip connected by the Philip chip bonding, for example, there are those described in JP-A-63-107192 and JP-A-57-52145. As described above, the multi-chip module has been required in recent years, and thus the technology for repairing chips connected by these bonding technologies has been sufficiently developed. The current situation is not.

[0005]

As described above, in the prior art, the technique for repairing the chips connected by wire bonding has not been sufficiently developed.
A multi-chip module having a plurality of chips connected by wire bonding has a problem in that a module waste due to a defect of one chip is also added to the price and the manufacturing cost increases.

The present invention has been made in view of such conventional problems, and an object thereof is to provide a method for repairing an electronic device having a chip connected by wire bonding.

[0007]

According to a method of repairing an electronic device for achieving the above object, when an electronic component mounted on a substrate is defective, the electronic component side pad and the substrate side pad are connected. The wire is cut at the neck portion on the side of the board-side pad, the electronic component is removed from the board, and the wire residue remaining on the board-side pad is processed so that the upper surface thereof becomes flat. The surface of the board-side pad is cleaned, a new electronic component is fixed on the board, and the pad formed on the electronic component and the board-side pad on which the flattened wire residue remains are newly added. It is characterized in that the wires are connected with each other.

Here, it is preferable that the cleaning is performed by using laser, plasma or the like. Further, when the electronic component is die-bonded on the substrate with a solder material, a portion where the electronic component is mounted is heated to melt the solder material, and the electronic component is removed from the substrate. The surface of the solder residue remaining on the substrate is irradiated with a laser in an atmosphere of an inert gas or a reducing gas to remove the oxide film on the surface, and the electronic component on the substrate is removed. It is preferable to dispose a new solder material and a new electronic component on the open portion, melt the new solder material and the solder residue, and re-die-bond the new electronic component on the substrate. Further, when the electronic component is die-bonded onto the substrate with an organic adhesive, the electronic component is mechanically peeled off from the substrate and left on the substrate in an oxidizing gas atmosphere. The organic adhesive residue present is irradiated with a laser to vaporize and remove the organic adhesive almost completely, and a new organic adhesive is supplied to a portion of the substrate where the electronic component is removed, and the organic adhesive is newly added there. It is preferable to dispose different electronic components and to re-die-bond the new electronic component onto the substrate.

[0009]

In order to remove the defective chip mounted on the substrate, it is necessary to first cut the wire connecting the chip side pad and the substrate side pad. When this wire is cut, if it is pulled and broken at random, there is a high probability of breaking at the ball neck portion on the chip side. In this case, most of the wires are left on the substrate side, and the remaining wires are likely to come into contact with another wiring circuit to cause a short circuit failure, and the reliability as a product cannot be ensured. In order to prevent this, the wire remaining on the substrate side may be cut and removed from the vicinity of the bonding portion on the substrate side, but the diameter is several tens of μm.
Since it is difficult to automatically chuck a fine wire bent in an arbitrary direction, the wire removal process cannot be performed in a short time. Therefore, it is preferable to cut the substrate side neck portion of the wire with a cutter or the like in a state where both ends of the wire are fixed.

When the wire is cut and the removal of the electronic component is completed, a new electronic component is placed on the substrate, and the board-side pad where the wire remains and the component-side pad of the new electronic component are replaced with a new wire. Connect with. In this case, when the wire is cut, the cut surface is small and has irregularities. Therefore, even if an attempt is made to connect a new wire to the wire residue having such a cut surface or the board-side pad on which the wire residue remains, the connection reliability will be poor. Therefore, press the wire residue before re-wire bonding,
Make the top surface flat and wide.

Further, the connection reliability at the time of re-wire-bonding is simply the process of going through the dirt attached to the bonding surface from the pressing jig or the module assembling process and various inspection processes if the wire residue is still pressed. Therefore, the dirt attached to the bonding surface causes the deterioration. Therefore, in order to remove organic substances and inorganic substances from the pressed wire residue and the substrate-side pad surface, the surface is cleaned. As a concrete method of this cleaning,
Plasma irradiation, laser irradiation, arc discharge, etc. can be considered. By performing the cleaning process in this way, the connection reliability between the new wire and the board-side pad can be made equal to the initial connection reliability between the board-side pad and the wire.

On the other hand, regarding the portion where the semiconductor chip is die-bonded on the substrate, the correspondence differs depending on whether the die-bonding with a solder material or the die-bonding with an organic adhesive. In the case of soldering, the chip is removed by reflowing the solder, but a solder residue remains on the die bonding pad after chip removal, and a thick oxide film is formed on the surface thereof. In order to connect a new chip on it, it is necessary to remove the oxide film on the solder surface. As a method of removing this oxide film, a method of using a flux can be considered, but in a situation where it is difficult to use a flux due to the progress of defluoroization, another solderability improving method is necessary. Therefore, in the present invention, the surface of the solder residue is irradiated with laser in an inert gas or reducing gas atmosphere to remove the oxide film.

In the case of using an organic adhesive, since the adhesive residue after removing the chip and the chip etc. have poor adhesion, the adhesive residue is completely removed to obtain a state equivalent to the initial die bonding pad surface. Need to recover. Therefore, in the present invention, by irradiating a laser in an oxidizing atmosphere, the adhesive is efficiently vaporized and removed without damaging the metal die surface below.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Various embodiments according to the present invention will be described in detail below with reference to the drawings. First, before describing the repair method for the electronic device according to the present invention, the configuration of the multi-chip module will be described with reference to FIG. 7.

As shown in FIG. 1, the multi-chip module has a plurality of semiconductor chips 20, 20, 50 mounted on a ceramic multilayer substrate 10. In these semiconductor chips 20, 20, 50, a plurality of wire bonding pads 21, 21, 51 are formed on one surface (upper surface) and the other surface (lower surface) on the opposite side is formed as a die bonding surface. . Each chip 20, 20, 50
Is a die bonding pad 12, 12,
It is fixed at 12. Chip-side wire bonding pads (hereinafter, simply referred to as chip-side pads) 21,2
1, 51 are wire bonding pads (hereinafter, simply referred to as substrate-side pads) 11, 1 formed on the substrate 10.
1, 11 and wires 30, 30, 30 are connected.

Next, an embodiment of a repair method for an electronic device according to the present invention will be described with reference to FIGS. As shown in FIG. 1, the semiconductor chip 20 is fixed face-up to the die bonding pad 12 on the substrate 10 with the solder material 13. The chip-side pad 21 and the wire 30 are ball-bonded, and the substrate-side pad 11 and the wire 30 are wedge-bonded. The chip 20 is one of a plurality of chips that form the multi-chip module described with reference to FIG.

If defects are found in the semiconductor chip 20 itself shown in FIG. 1 or its connection after various inspections, it is necessary to remove the defective chip 20. Therefore, first, as shown in the figure, each wire 30 is pulled in a direction away from the chip 20 and broken at the neck portion 31 on the substrate pad 11 side. Then, the solder material 13 on the die bonding pad 12 is heated and melted, and the chip 20 is removed from the substrate 10.

Next, the wire residue 32 remaining on the substrate-side pad 11 is pressed to flatten the upper surface and increase the area of the upper surface as shown in FIG. In this way, by flattening the upper surface of the wire residue 32, it is possible to improve the contact property with the wire 30a (shown in FIG. 2) newly connected thereto. Then, as shown in the figure, the wire residue 33 and the substrate-side pad 11 whose upper surfaces are flattened are irradiated with laser light. here,
A KrF (wavelength: 249 nm) excimer laser is used as a laser, and 100 pulses having an energy density of 0.1 J / cm ² are irradiated. As the laser, other than this, XeF, ArF, XeCl, KCl, A
An excimer laser such as rCl or a YAG laser may be used. In this way, by irradiating with laser light,
In the steps such as assembling and inspecting so far, the attached organic substances and inorganic substances are evaporated and removed, and the wire residue and the surface of the substrate side pad can be cleaned. As a result, the bondability of the wire 30a newly connected here can be improved.

Next, as shown in FIG. 2, this module is placed in the atmosphere of the non-oxidizing gas 42 or the atmosphere of the reducing gas, and the high energy excimer laser 43 focused by the optical lens 44 is set. Die bonding pad 12
The solder residue 14 remaining on the upper surface is irradiated. Since a relatively thick oxide film 15 is formed on the surface of the solder residue 14, the oxide film 15 is locally and instantaneously irradiated with laser light to vaporize and remove the oxide film 15. At this time, it is preferable to increase the energy density of the laser light and remove the oxide film in a short time. This is because removing the oxide film in a short time can reduce the thermal influence on the substrate side. Further, not only the oxide film 15 is removed, but also the unnecessary solder material itself, for example, the solder material in a locally convex portion is removed so that the height of the solder residue 14 does not vary. In this way, by removing the oxide film 15, when re-soldering the non-defective chip 20a,
It is possible to prevent defective soldering due to the influence of the oxide film.

Next, as shown in the figure, Pb-Sn-
Solder material 16 of Ag and Ti-Ni on the die bonding surface
Non-defective chip 20 on which a metallized layer 22a of Ag is formed
and a are placed on the die bonding pad 12 in this order. It should be noted that the solder material and the material of the metallized layer may be other combinations. Then, as shown in the figure, a hot gas ejected from a nozzle while maintaining a reducing atmosphere, a heater jig, or the like locally heats a position corresponding to the die bonding pad 12 from the back side of the substrate 10, and a non-defective chip. The non-defective chip 20a is soldered onto the die bonding pad 12 by vibrating (scribing) 20a horizontally. In this way, since new solder is supplied in a form that replenishes after unnecessary solder is removed, re-soldering can be performed with good-quality solder, and the quality of the joint can be improved. Further, by performing soldering and scribing in a reducing atmosphere, it is possible to reduce the occurrence of solder wetting defects and void defects. Furthermore, by performing local heating, it is possible to prevent the influence on other non-defective chips. After that, the chip side pad 21a of the non-defective chip 20a and the substrate side pad 1
1 to connect to the chip side pad 21a wire 30
One end of a is ball-bonded, and part of the wire 30a is wedge-bonded to the wire residue 33 of the board-side pad 11 to complete the repair.

According to the present embodiment, in a multi-chip module assembled by wire bonding, even if a defective chip is found after the assembly is completed and the surface of the module is contaminated with an organic substance or an inorganic substance, the bondability is deteriorated. In the process of mounting a new non-defective chip again, it is possible to perform die bonding or wire bonding with the same quality and reliability as those at the time of initial assembly, and it is possible to reduce the manufacturing cost of the multichip module.

Although the die bonding pad cleaning treatment is performed after the wire bonding pad cleaning treatment in the present embodiment, the treatment and the treatment may be performed simultaneously in a reducing atmosphere. Also,
Laser irradiation was used as a means for cleaning the surface of the pressed wire residue and improving the bondability in the wire-bonding pad cleaning process in 1. However, a module was placed in a chamber in an Ar atmosphere to generate plasma. Alternatively, contaminants such as organic substances and inorganic substances may be removed. Further, instead of the laser, a method of generating an arc discharge by creating a non-oxidizing atmosphere between the wire residue and the discharge electrode, or by disposing an opposing electrode on the bonding residue and generating an arc discharge between the electrodes The method may be used to clean the wire residue surface.

Next, another example of the treatment of the wire residue will be described with reference to FIG. As shown in the same figure, as in the step of FIG. 1, the bonding wire is pulled in a direction away from the chip so that the tip of the wire residue 32 does not protrude from the chip side pad 11, and the wire is removed from the substrate. The neck portion on the side pad 11 side is broken.

Next, as shown in FIG. 5, the upper surface of the wire residue 32 and the substrate side pad 11 is irradiated with the excimer laser 41 focused by the lens 40, and the surface is thinly ablated and cleaned. Then, as shown in the same figure, pressure is applied to the cleaned wire residue 32 while applying heat and ultrasonic waves with a tool 45 for wedge bonding having a flat lower surface, and as shown in the same figure, The residue 33 is processed flat. After that, as shown in the same figure, the same laser 4 as in the step of forming the flat wire residue 33 is used.
Irradiate 1 to clean the surface. Then, as shown in the same figure, a new wire 30a for repair is bonded to this surface by a bonding tool 46. That is,
In this embodiment, the wire residue is irradiated with a laser beam before the wire residue is flattened, and other than that, it is basically the same as the previous embodiment.

When the wire is pulled and broken, the broken portion extends and the tip portion of the remaining wire residue 32 becomes a beard. Therefore, when the wire residue 32 having such a shape is pressed, the beard portion is broken in the process and the surfaces of the wire residue 32 come into contact with each other as shown in FIG. The surface of 32 and the surface of the substrate-side pad 11 come into contact with each other. Therefore, as a result of the press working, the surfaces of the wire residues 32 are in contact with each other, and the surfaces of the wire residues 32 and the substrate-side pad 11 are in contact with each other. If not made, the bondability between the two will deteriorate. In view of this, in this embodiment, the surface of the wire residue 32 and the substrate-side pad 11 is cleaned with a laser before pressing to prevent the strength of the bonding portion from decreasing. The reason why the cleaning process is performed again after the press working is that the surface of the wire residue 32 is soiled again by the tool 45 when the wedge bonding tool 45 is pressed.

Next, another example of the wire breaking process will be described with reference to FIG. In the examples so far,
Although the wire 30 was pulled to break it, in the present embodiment, the wire 30 is cut by applying a mechanical shearing force to the target position of the wire 30 with the cutter 47 or the like. A minute cutter 47 is inserted between the wire 30 connecting the chip side pad 21 and the substrate side pad 11 and the defective chip 20 so as to be substantially parallel to the side surface of the chip 20. At this time, the height position of the cutter 47 is set to be slightly higher than the upper surface of the substrate-side pad 11. Next, the cutter 47 is moved substantially parallel to the substrate and away from the chip 21, and the cutter 47 is moved.
Then, the neck portion 31 of the wire 30 on the substrate side pad 11 side is cut.

As described above, the wire 30 is not broken by pulling it, but the mechanical shearing force is applied to the wire 30 to cut the wire 30, whereby the intended position of the wire 30 can be surely cut. it can. Also, wire 3
Since the cut surface of 0 is almost parallel to the substrate and no beard-like portion is formed, it is not necessary to clean the wire residue before the flattening of the wire residue as in the previous embodiment. Further, in the present embodiment, since the plurality of wires 30, 30, ... Provided on one side of the chip 20 can be cut all at once, the efficiency of the wire breaking process can be improved.

Next, still another example of the wire breaking process will be described with reference to FIG. As shown in the figure,
The bonding portion 34 of the wire 30 on the substrate side is crushed by applying an ultrasonic wave and a load with a wedge tool 48 having a flat lower surface. Next, the wire 30 is pulled in a direction away from the chip 20 to reduce the cross section and weaken the strength of the bonding portion 3.
The wire 30 is broken from the root of 4.

According to this embodiment, the wire breaking process and the wire residue flattening process can be performed at the same time, and the work efficiency of repair can be greatly improved. Also in this embodiment, as in the case where the wire 30 is cut by the cutter 47, the chip 20 is used as the wedge tool 48.
By using a width that is larger than the length of one side of
A plurality of wires 3 provided on one side of the chip 20
It is also possible to disconnect 0, 30, ... All at once.

Next, an embodiment relating to a method for repairing a semiconductor chip die-bonded on a substrate with an organic adhesive will be described with reference to FIG. As shown in FIG. 6, the chip 50 has an organic adhesive 17 on the die bonding pad 12 on the substrate 10 face up.
It is fixed at. The chip-side pad 51 and the wire 30 are ball-bonded, and the substrate-side pad 11 and the wire 30 are wedge-bonded. The chip 20 is one of a plurality of chips that form the multi-chip module described with reference to FIG. When defects are found in the semiconductor chip 50 itself or the connection thereof shown in FIG. 6 after various inspections, as shown in the first step, the bonding wire 30 is attached to the neck portion 31 on the substrate pad 11 side. Break. Subsequently, a shearing force is applied to the organic adhesive 17 to mechanically peel the chip 50. At this time, the adhesive residue 18 having irregularities remains on the die bonding pad 12.

Therefore, as shown in FIG. 3, the module is placed in an atmosphere of an oxidizing gas 49, and the adhesive residue 18 is irradiated with a high energy excimer laser 63 focused by an optical lens 64. The adhesive residue 18 is instantaneously vaporized and completely removed. Next, as shown in the same figure, a new organic adhesive 17a is supplied onto the die bonding pad 12 from which all the adhesive residue 18 has been removed, and a new non-defective chip 50a is placed there and lightly pressed, Is heated to the curing temperature of the adhesive to harden the adhesive 16a. Then, the chip side pad 51 of the new chip 50a
A is connected to the substrate side pad 33 by wire bonding to complete the repair. The method of repairing wire bonding is the same as in the previous embodiment.

According to the present embodiment, the laser 63 is locally irradiated onto the die bonding pad 12 to apply the organic adhesive 1
Since 7 is removed, the organic adhesive residue 18 can be completely removed without damaging the die bonding pad 12 and other parts. As a result, it is possible to secure the same organic adhesiveness as in the initial stage, so that good re-die bonding can be performed.

Although various embodiments of the repair method according to the present invention have been described above, this technique is a multi-chip module in which a plurality of bare chips 20, 20, 50 are mounted on the substrate 10 (see FIG. 7). Applicable to other than For example, as shown in FIG. 8, it is also applicable to a multi-chip module in which one bare chip 20 and a plurality of semiconductor packages 70, 70, ... Are mixed. The substrate 75 of this module is composed of an organic multilayer substrate body 76 and a finned metal substrate forming portion 78 housed in a through hole 77 formed in the substrate body 76. A plurality of semiconductor packages 70, 70, ... Are mounted on the substrate body 76, and the bare chip 20 is fixed to the finned substrate forming portion 78 with a solder material. Pad 2 of the bare chip 20
1 and the pad 79 of the substrate body 76 are connected by the wire 30. Thus, even when one bare chip 20 is mounted on the substrate 75 and the substrate 75 and the bare chip 20 are electrically connected by wire bonding, the repair method described above can be applied. it can. However, only one bare chip is mounted on the board,
If no other semiconductor components are mounted,
Since it is more efficient to discard this module than to spend the trouble of repairing the bare chip,
Chip repair is not very effective.

Further, the repair technique in the above embodiments is not limited to the repair of the semiconductor chip, and other devices,
For example, it can be applied to a liquid crystal display device. As shown in FIG. 9, a liquid crystal display device 85 and a plurality of semiconductor packages 70, 70, ... Are mounted on a substrate 80. The liquid crystal display device 85 is configured to have two glass plates 86 and 87 and a liquid crystal (not shown) sealed between them. The pad 88 of the liquid crystal device 85 and the pad 81 of the substrate 80 are connected by a wire 84. As described above, even when the relatively expensive liquid crystal display device 85 becomes defective, if the liquid crystal device 85 is repaired by the repair method described above, the module substrate 80 and the semiconductor package 70 can be effectively used without being discarded. Therefore, it is possible to reduce the total product cost.

[0035]

According to the present invention, after the defective electronic component is removed from the substrate, the wire residue remaining on the substrate-side pad is flattened and the surface thereof is cleaned.
The reliability of connection between the new wire and these can be improved. Also, in die bonding between the substrate and the new electronic component, since the oxide film of the solder material residue is removed or the organic solder material is removed, the new electronic component is re-die-bonded on the substrate, New electronic components can be firmly fixed on the board.

In this way, defective electronic components can be removed and new electronic components can be reliably mounted on the substrate. As a result, for example, a plurality of chips or the like can be mounted on the substrate, such as a multichip module. However, even if one chip has a defect, it is not necessary to discard the entire module, and the manufacturing cost can be reduced.

[Brief description of drawings]

FIG. 1 is an explanatory diagram for explaining an embodiment of a repair method for an electronic device according to the present invention (following FIG. 2).

FIG. 2 is an explanatory diagram for explaining an embodiment of a repair method for an electronic device according to the present invention (continued from FIG. 1).

FIG. 3 is an explanatory diagram for explaining an example of a method for treating a wire residue according to the present invention.

FIG. 4 is an explanatory diagram for explaining an example of a wire cutting method according to the present invention.

FIG. 5 is an explanatory view for explaining another embodiment of the wire cutting method according to the present invention.

FIG. 6 is an explanatory diagram for explaining another embodiment of the repair method for an electronic device according to the present invention (targeted for die-bonding with an organic adhesive).

FIG. 7 is a cross-sectional view of a multi-chip module according to the present invention.

FIG. 8 is a cross-sectional view of another multichip module according to the present invention.

FIG. 9 is a cross-sectional view of a liquid crystal display module according to the present invention.

[Explanation of symbols]

10, 75, 80 ... Substrate, 11, 79, 81 ... Substrate side pad, 12 ... Die bonding pad, 13, 13a ...
Solder material, 14 ... Solder material residue, 15 ... Oxide film, 17, 17
a ... Organic adhesive, 18 ... Organic adhesive residue, 20, 50 ...
Semiconductor chips 21, 51 ... Chip side pads 22, 22,
2a ... Metallized layer, 30, 30a ... Wire, 31 ... Neck part, 32 ... Wire residue (before planarization), 33 ... Wire residue (after planarization), 41, 43, 43a, 63, 63a
… Excimer laser, 45… Wedge bonding tool, 46… Bonding tool, 47… Cutter, 4
8 ... Wedge tool, 70 ... Semiconductor package, 85 ...
Liquid crystal display device.

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Kazuya Takahashi 7-1, 1-1 Omika-cho, Hitachi-shi, Ibaraki Hitachi Ltd. Hitachi Research Laboratory

Claims (11)

[Claims] 1. A semiconductor chip or device (hereinafter referred to as an electronic component) is die-bonded on a substrate to form a pad formed on the electronic component (hereinafter referred to as an electronic component side pad) and a substrate. A pad (hereinafter, referred to as a board-side pad) is connected by a wire in a method of repairing an electronic device, wherein when the electronic component is defective, the wire is cut at a neck portion on the board-side pad side. The electronic component is removed from the substrate, the wire residue remaining on the substrate-side pad is processed so that its upper surface is flat, and the wire residue and the surface of the substrate-side pad are cleaned, Is fixed on the substrate, and the pad formed on the electronic component and the pad on the substrate where the flattened wire residue remains are connected by a new wire. And a method of repairing an electronic device. 2. When the wire is cut by pulling, the wire is pulled so that a cut end formed in a beard shape due to the ductility of the wire does not protrude from the substrate side pad. Item 1. A method of repairing an electronic device according to Item 1. 3. The method for repairing an electronic device according to claim 2, wherein the surface of the wire residue is cleaned before the wire residue is flattened. 4. The method of repairing an electronic device according to claim 1, wherein, when the wire is cut, a neck portion of the wire on the substrate side pad side is mechanically cut by a cutting blade. 5. The method of repairing an electronic device according to claim 1, wherein the cleaning is performed by irradiating a place to be cleaned with a laser. 6. The method of repairing an electronic device according to claim 1, wherein the electronic device is placed in a chamber and plasma is generated in the chamber to perform the cleaning. 7. The cleaning is performed by disposing a discharge electrode on the substrate-side pad where the wire residue remains and generating an arc between the substrate-side pad and the discharge electrode. The method for repairing an electronic device according to claim 1, 2, 3, or 4. 8. The cleaning is performed by arranging two counter electrodes on the substrate-side pad where the wire residue remains and generating an arc between the counter electrodes. 2. The method for repairing an electronic device according to 2, 3, or 4. 9. When flattening the wire residue, a flat part of the tool is pressed against the wire residue while applying only heat or heat and ultrasonic waves to the tool having a flat end, 9. The method for repairing an electronic device according to claim 1, wherein the upper surface is processed to be flat. 10. When the electronic component is die-bonded onto the substrate with a solder material, a portion where the electronic component is mounted is heated to melt the solder material, and the electronic component is attached to the substrate. The surface of the solder residue remaining on the substrate is irradiated with a laser in an inert gas or reducing gas atmosphere to remove the oxide film on the surface, and the electronic component on the substrate is removed. A new solder material and a new electronic component are disposed in the formed portion, the new solder material and the solder residue are melted, and the new electronic component is re-die-bonded onto the substrate. Item 1,
A method for repairing an electronic device according to 2, 3, 4, 5, 6, 7, 8 or 9. 11. When the electronic component is die-bonded onto the substrate with an organic adhesive, the electronic component is mechanically peeled from the substrate and left on the substrate in an oxidizing gas atmosphere. Irradiating the organic adhesive residue which is being irradiated with a laser, vaporizing and removing the organic adhesive almost completely, and supplying a new organic adhesive to the portion of the substrate where the electronic component has been removed, By arranging new electronic parts,
The re-die-bonding of the new electronic component on the substrate is carried out.
8. The method for repairing an electronic device according to 8 or 9.