JPH07285064A - Aluminous carrier plate - Google Patents
Aluminous carrier plateInfo
- Publication number
- JPH07285064A JPH07285064A JP7573694A JP7573694A JPH07285064A JP H07285064 A JPH07285064 A JP H07285064A JP 7573694 A JP7573694 A JP 7573694A JP 7573694 A JP7573694 A JP 7573694A JP H07285064 A JPH07285064 A JP H07285064A
- Authority
- JP
- Japan
- Prior art keywords
- carrier plate
- sic
- alumina
- strength
- aluminous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000002245 particle Substances 0.000 claims abstract description 15
- 239000011159 matrix material Substances 0.000 claims abstract description 9
- 239000002131 composite material Substances 0.000 claims abstract description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 22
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 21
- 238000005245 sintering Methods 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000011109 contamination Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000010419 fine particle Substances 0.000 description 12
- 239000000843 powder Substances 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004927 clay Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000007569 slipcasting Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000005995 Aluminium silicate Substances 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910003671 SiC 0.5 Inorganic materials 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052602 gypsum Inorganic materials 0.000 description 1
- 239000010440 gypsum Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はアルミナ質定盤に係り、
特に高強度かつ高靭性の高品質アルミナ質キャリアプレ
ートに関する。The present invention relates to an alumina surface plate,
Particularly, it relates to a high quality alumina carrier plate having high strength and high toughness.
【０００２】[0002]
【従来の技術】定盤（ｓｕｒｆａｃｅ ｐｌａｔｅ）
は、非常に正確な平面を有する平板であり、他部材の表
面性試験や厳密な測定又は試験用具の取付け時の位置決
めなどを目的として様々な分野で利用されている。2. Description of the Related Art Surface plate
Is a flat plate having a very accurate flat surface, and is used in various fields for the purpose of surface property test of other members, strict measurement, or positioning when a test tool is attached.
【０００３】従来、定盤には金属製のものとセラミック
ス製のものとがあり、セラミックス製定盤には、粘土
系、ムライト系、アルミナ系、炭化珪素系のものがあ
る。このうち、アルミナ質定盤は、アルミナに、助剤と
して二酸化珪素やカオリン系の粘土を配合して製造され
ている。Conventionally, there are a surface plate made of metal and a surface plate made of ceramics, and as the surface plate made of ceramics, there are clay type, mullite type, alumina type and silicon carbide type. Of these, the alumina surface plate is manufactured by mixing alumina with silicon dioxide or kaolin-based clay as an auxiliary agent.
【０００４】これらの定盤はその用途により使い分けら
れ、構造セラミックス材料や機械材料等の分野では、特
に、セラミックス製の定盤が多く使用され、機械的強度
の高いものが要求されている。とりわけ、シリコンウエ
ハの分野では、機械的強度が高いことに加え、ウエハを
汚染することのない、高品質のセラミックス製キャリア
プレートが要求されている。不純物による汚染の少ない
キャリアプレートは、その他の研摩用定盤の分野でも要
求されている。These surface plates are used properly depending on their use. In the field of structural ceramic materials, mechanical materials, etc., in particular, many surface plates made of ceramics are used, and those having high mechanical strength are required. In particular, in the field of silicon wafers, in addition to high mechanical strength, there is a demand for high-quality ceramic carrier plates that do not contaminate the wafer. A carrier plate that is less contaminated by impurities is also required in the field of other polishing platens.
【０００５】[0005]
【発明が解決しようとする課題】従来のアルミナ質定盤
は、いずれも機械的強度が十分でなく、使用中に、割
れ、欠けなどを生じ、長期の耐久性に劣るという欠点が
あった。この割れ、欠けの発生は焼結アルミナ粒子のグ
レーンサイズや焼結助剤として用いられている粘土成分
に起因するものであった。However, all of the conventional alumina-based surface plates have insufficient mechanical strength, and have a drawback that they are cracked or chipped during use and have poor long-term durability. The cracks and chips were caused by the grain size of the sintered alumina particles and the clay component used as a sintering aid.
【０００６】一方で、シリコンウエハ、その他各種研摩
用キャリアプレートとして使用されるもののように、不
純物による汚染を極力避けることが要求されるキャリア
プレートは、焼結助剤の使用量が可能な限り少ないこと
が望まれる。On the other hand, carrier plates such as those used as silicon wafers and other carrier plates for various types of polishing which are required to avoid contamination by impurities as much as possible, use as little sintering aid as possible. Is desired.
【０００７】このようなことから、焼結助剤使用量が少
なく、しかも、機械的強度が高いアルミナ質セラミック
スよりなるキャリアプレートの開発が望まれていた。For these reasons, it has been desired to develop a carrier plate made of an alumina-based ceramic which has a small amount of sintering aid and a high mechanical strength.
【０００８】本発明は上記従来の実情に鑑みてなされた
ものであって、高強度かつ高靭性で、しかも、焼結助剤
使用量が少なく不純物汚染の問題のない高品質アルミナ
質キャリアプレートを提供することを目的とする。The present invention has been made in view of the above conventional circumstances, and provides a high-quality alumina carrier plate having high strength and high toughness, a small amount of sintering aid used, and no problem of impurity contamination. The purpose is to provide.
【０００９】[0009]
【課題を解決するための手段】本発明のアルミナ質キャ
リアプレートは、Ａｌ2 Ｏ3 マトリックス中に１〜２０
体積％のＳｉＣ微粒子が分散してなる粒子分散アルミナ
複合材料より構成されることを特徴とする。SUMMARY OF THE INVENTION The alumina-based carrier plate of the present invention comprises 1-20 Al 2 O 3 matrix.
It is characterized by being composed of a particle-dispersed alumina composite material in which volume% of SiC fine particles are dispersed.
【００１０】以下に本発明を詳細に説明する。The present invention will be described in detail below.
【００１１】本発明のアルミナ質キャリアプレートを構
成する粒子分散アルミナ複合材料は、アルミナ（Ａｌ2
Ｏ3 ）マトリックス中に、炭化珪素（ＳｉＣ）微粒子が
分散してなるものである。The particle-dispersed alumina composite material constituting the alumina carrier plate of the present invention is made of alumina (Al 2
This is a dispersion of fine particles of silicon carbide (SiC) in an O 3 ) matrix.
【００１２】本発明において、粒子分散アルミナ複合材
料中のＳｉＣ微粒子の割合が１体積％未満では後述の作
用の項で述べる、機械的特性向上のための内部応力を十
分に誘起させることができず、２０体積％を超えて添加
してもＳｉＣ微粒子の添加による効果に差異はない。In the present invention, if the proportion of the SiC fine particles in the particle-dispersed alumina composite material is less than 1% by volume, the internal stress for improving the mechanical properties, which will be described later, cannot be sufficiently induced. Even if added in excess of 20% by volume, there is no difference in effect due to addition of SiC fine particles.
【００１３】従って、ＳｉＣ微粒子の割合は１〜２０体
積％とする。Therefore, the proportion of the SiC fine particles is set to 1 to 20% by volume.
【００１４】本発明において、マトリックスを構成する
Ａｌ2 Ｏ3 原料としては、通常使用されている、粒径が
サブミクロン以下、特に一次粒子の平均粒径が０．３〜
０．５μｍのものを用い、一方、分散粒子であるＳｉＣ
微粒子としてはその粒径がサブミクロン以下、特に平均
粒径が０．１〜０．５μｍのものを用いるのが好まし
い。In the present invention, the Al 2 O 3 raw material constituting the matrix is usually used, and the particle diameter is submicron or less, and particularly the average particle diameter of the primary particles is 0.3 to.
0.5 μm is used, while SiC as dispersed particles
As the fine particles, it is preferable to use those having a particle size of submicron or less, and particularly an average particle size of 0.1 to 0.5 μm.
【００１５】このような粒子分散アルミナ複合材料より
なる本発明のアルミナ質キャリアプレートを製造するに
は、例えば、Ａｌ2 Ｏ3 原料粉末に所定量のＳｉＣ微粒
子を添加し、水等の分散媒中にてボールミルで長時間撹
拌混合して均一分散させる。次いで、得られた分散液を
スリップキャスト法により、或いは、一部乾燥後プレス
成形することにより成形し、得られた成形体を焼成す
る。この焼成は１４００℃未満では十分な焼結密度を得
ることができず、１６５０℃を超えると時間の経過と共
にＡｌ2 Ｏ3 グレーンの成長が進行し、好ましくない。
従って、焼成は１４００〜１６５０℃の温度で２〜３時
間程度行うのが好ましい。In order to manufacture the alumina carrier plate of the present invention composed of such a particle-dispersed alumina composite material, for example, a predetermined amount of SiC fine particles are added to Al 2 O 3 raw material powder and the mixture is placed in a dispersion medium such as water. In a ball mill, stir and mix for a long time to uniformly disperse. Next, the obtained dispersion is molded by slip casting or by press-molding after partially drying, and the molded body obtained is fired. If this firing is less than 1400 ° C., a sufficient sintered density cannot be obtained, and if it exceeds 1650 ° C., the growth of Al 2 O 3 grains proceeds over time, which is not preferable.
Therefore, the firing is preferably performed at a temperature of 1400 to 1650 ° C. for about 2 to 3 hours.
【００１６】なお、この焼成による焼結性を高めるため
に、必要に応じて二酸化珪素（ＳｉＯ2 ）の焼結助剤を
用いることができるが、本発明においては、ＳｉＣ微粒
子の添加効果により、焼結助剤の添加量を従来よりも少
なくすることができ、通常の場合、Ａｌ2 Ｏ3 とＳｉＣ
微粒子との合量に対して０．５重量％以下、特に０．１
〜０．２重量％程度の添加で十分な焼結性を得ることが
できる。A sintering aid of silicon dioxide (SiO 2 ) can be used if necessary in order to enhance the sinterability by this firing. In the present invention, however, due to the effect of adding SiC fine particles, The addition amount of the sintering aid can be made smaller than before, and in the usual case, Al 2 O 3 and SiC
0.5% by weight or less, especially 0.1% by weight based on the total amount of the fine particles.
Sufficient sinterability can be obtained by adding about 0.2 wt%.
【００１７】[0017]
【作用】Ａｌ2 Ｏ3 マトリックスは一般に１４００〜１
７００℃で焼結するが、その際、焼結条件によりそのＡ
ｌ2 Ｏ3 のグレーンが成長する。グレーンサイズは一般
に５０〜３００μｍとなって、アルミナセラミックスと
なる。このグレーンを過度に成長させると、得られるア
ルミナセラミックスの密度は高くなるものの、反面、機
械的強度が小さくなり、構造材料として不適当である。The Al 2 O 3 matrix is generally 1400 to 1
Sinter at 700 ° C, but depending on the sintering conditions, A
The grain of l 2 O 3 grows. The grain size is generally 50 to 300 μm, and becomes alumina ceramics. If this grain is grown excessively, the density of the alumina ceramics obtained will increase, but on the other hand, the mechanical strength will decrease, making it unsuitable as a structural material.
【００１８】本発明においては、Ａｌ2 Ｏ3 マトリック
ス中にＳｉＣ微粒子を分散させて焼結することにより、
この微粒子分散効果で内部応力を誘起させ、強度や破壊
靭性の向上を図る。In the present invention, the fine SiC particles are dispersed in an Al 2 O 3 matrix and sintered, whereby
This fine particle dispersion effect induces internal stress to improve strength and fracture toughness.
【００１９】即ち、ＳｉＣ微粒子は焼成中にＡｌ2 Ｏ3
マトリックスと反応することはなく、微粒子の状態で存
在し、焼結により内部応力を発生し、焼結体を強化す
る。ＳｉＣはまた、Ａｌ2 Ｏ3 の粒成長の抑制作用をも
奏し、Ａｌ2 Ｏ3 のグレーンサイズを抑えることによ
り、高強度化を図る。因みに、強度は、従来のアルミナ
質定盤に比べて３０〜７０％も向上される。That is, the SiC fine particles are Al 2 O 3 during firing.
It does not react with the matrix, exists in the form of fine particles, and generates internal stress by sintering, strengthening the sintered body. SiC also exhibit the inhibitory effect of the grain growth of Al 2 O 3, by suppressing the grain size of the Al 2 O 3, achieve high strength. Incidentally, the strength is improved by 30 to 70% as compared with the conventional alumina-based surface plate.
【００２０】しかも、ＳｉＣは不活性材料であり、不純
物汚染の問題もない。Moreover, since SiC is an inert material, there is no problem of impurity contamination.
【００２１】[0021]
【実施例】以下に実施例及び比較例を挙げて本発明をよ
り具体的に説明する。EXAMPLES The present invention will be described more specifically with reference to Examples and Comparative Examples below.
【００２２】なお、用いた原料は次の通りである。The raw materials used are as follows.
【００２３】Ａｌ2 Ｏ3 ：昭和電工社製 Ａｌ2 Ｏ3 粉
末（平均粒径０．４μｍ） ＳｉＣ ：イビデン社製 ＳｉＣ粉末（平均粒径３００
ｎｍ） ＳｉＯ2 ：三菱マテリアル（株）製 ＳｉＯ2 粉末（平
均粒径０．０５μｍ） 実施例１〜４ Ａｌ2 Ｏ3 粉末とＳｉＣ粉末とを表１に示す配合割合で
混合し、水を用いてボールミル中で３０時間撹拌した。
なお、バインダーとしてポリビニルアルコールを原料粉
に対して２．５重量％、分散剤としてポリカルボン酸ア
ンモニウムを原料粉に対して１．０重量％添加した。ま
た、焼結助剤としてＳｉＯ2 粉末をＡｌ2 Ｏ2 とＳｉＣ
との合量に対して１重量％添加した。Al 2 O 3 : Showa Denko Al 2 O 3 powder (average particle size 0.4 μm) SiC: Ibiden SiC powder (average particle size 300
nm) SiO 2: Mitsubishi Materials and Co. SiO 2 powder (mean particle size 0.05 .mu.m) Example 1 to 4 Al 2 O 3 powder and SiC powder were mixed in proportions shown in Table 1, using water And stirred in a ball mill for 30 hours.
It should be noted that polyvinyl alcohol as a binder was added by 2.5% by weight to the raw material powder, and ammonium polycarboxylate was added as a dispersant by 1.0% by weight to the raw material powder. Further, as a sintering aid, SiO 2 powder is used as Al 2 O 2 and SiC.
1% by weight based on the total amount of
【００２４】得られた分散液をスリップキャスト法にて
石膏型を用いて常圧にて成形し、直径３００ｍｍ，厚さ
２０ｍｍの成形体を得た。The obtained dispersion was molded by slip casting at atmospheric pressure using a gypsum mold to obtain a molded product having a diameter of 300 mm and a thickness of 20 mm.
【００２５】得られた成形体を８０℃で乾燥した後、ガ
ス炉にて５０℃／ｈｒで昇温し、１６５０℃で２時間保
持して焼成した。The obtained molded body was dried at 80 ° C., then heated in a gas furnace at 50 ° C./hr, and held at 1650 ° C. for 2 hours for firing.
【００２６】得られた焼結体について、Ａｌ2 Ｏ3 のグ
レーンサイズ、相対密度、破壊靭性、曲げ強度及び硬度
を測定し、結果を表１に示した。The grain size, relative density, fracture toughness, bending strength and hardness of Al 2 O 3 of the obtained sintered body were measured, and the results are shown in Table 1.
【００２７】比較例１ ＳｉＣ粉末を用いなかったこと以外は実施例１と同様に
して焼結体を製造し、得られた焼結体について、Ａｌ2
Ｏ3 のグレーンサイズ、相対密度、破壊靭性、曲げ強度
及び硬度を測定し、結果を表１に示した。Comparative Example 1 A sintered body was produced in the same manner as in Example 1 except that SiC powder was not used, and the obtained sintered body was Al 2
The grain size, relative density, fracture toughness, bending strength and hardness of O 3 were measured, and the results are shown in Table 1.
【００２８】[0028]
【表１】 [Table 1]
【００２９】表１より明らかなように、本発明によれば
Ａｌ2 Ｏ3 マトリックスのグレーンの成長が抑えられ、
グレーンサイズが小さく安定する。しかも、焼結性は高
められるため高密度であり、高強度、高靭性のアルミナ
質キャリアプレートが提供される。As is clear from Table 1, according to the present invention, the growth of grains in the Al 2 O 3 matrix is suppressed,
The grain size is small and stable. Moreover, since the sinterability is enhanced, the alumina carrier plate having high density and high strength and high toughness is provided.
【００３０】[0030]
【発明の効果】以上詳述した通り、本発明のアルミナ質
キャリアプレートは、ＳｉＣ微粒子の微粒子分散効果に
よる内部応力誘起型の粒子分散アルミナ複合材料より構
成されるものであって、高強度、高靭性を示し、使用時
のキャリアプレートの割れ、欠け等の損傷は防止され
る。また、不純物汚染等の問題も解消され、本発明によ
れば、シリコンウエハ、その他各種研摩用キャリアプレ
ート等として好適な、高耐久性で高品質なアルミナ質キ
ャリアプレートが提供される。As described in detail above, the alumina carrier plate of the present invention is composed of an internal stress-induced type particle-dispersed alumina composite material due to the effect of dispersion of SiC particles, and has high strength and high strength. It exhibits toughness and prevents damage such as cracking or chipping of the carrier plate during use. Further, problems such as contamination of impurities are solved, and according to the present invention, a highly durable and high quality alumina carrier plate suitable for a silicon wafer and other various carrier plates for polishing is provided.
Claims (1)
積％のＳｉＣ微粒子が分散してなる粒子分散アルミナ複
合材料より構成されることを特徴とするアルミナ質キャ
リアプレート。1. An alumina-based carrier plate comprising a particle-dispersed alumina composite material in which 1 to 20% by volume of SiC particles are dispersed in an Al 2 O 3 matrix.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7573694A JPH07285064A (en) | 1994-04-14 | 1994-04-14 | Aluminous carrier plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7573694A JPH07285064A (en) | 1994-04-14 | 1994-04-14 | Aluminous carrier plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07285064A true JPH07285064A (en) | 1995-10-31 |
Family
ID=13584869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7573694A Withdrawn JPH07285064A (en) | 1994-04-14 | 1994-04-14 | Aluminous carrier plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07285064A (en) |
-
1994
- 1994-04-14 JP JP7573694A patent/JPH07285064A/en not_active Withdrawn
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20010703 |