JPH07283262A - Wire bonding device - Google Patents
Wire bonding deviceInfo
- Publication number
- JPH07283262A JPH07283262A JP6100622A JP10062294A JPH07283262A JP H07283262 A JPH07283262 A JP H07283262A JP 6100622 A JP6100622 A JP 6100622A JP 10062294 A JP10062294 A JP 10062294A JP H07283262 A JPH07283262 A JP H07283262A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- capillary
- wire
- moved
- bonding position
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/788—Means for moving parts
- H01L2224/78801—Lower part of the bonding apparatus, e.g. XY table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、例えばリードフレーム
上に載置された半導体チップ等の上面と該リードフレー
ム表面に形成された接点部とをボンディングワイヤによ
り接続するための、ワイヤボンディング装置に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus for connecting an upper surface of a semiconductor chip or the like mounted on a lead frame to a contact portion formed on the surface of the lead frame with a bonding wire. It is a thing.
【0002】[0002]
【従来の技術】従来、このようなワイヤボンディング装
置は、例えば図4に示すように構成されている。即ち、
図4において、ワイヤボンディング装置1は、ボンディ
ングヘッド(図示せず)に固定されたテーブル2と、上
記テーブル2の上方に張り出したトーチユニット3と、
該トーチユニット3の上方にて下降可能に支持されたキ
ャピラリ4とから構成されている。2. Description of the Related Art Conventionally, such a wire bonding apparatus is constructed, for example, as shown in FIG. That is,
In FIG. 4, a wire bonding apparatus 1 includes a table 2 fixed to a bonding head (not shown), a torch unit 3 protruding above the table 2, and a torch unit 3.
The capillaries 4 are supported above the torch unit 3 so as to be capable of descending.
【0003】さらに、上記キャピラリ4は、図示しない
XYテーブルによりXY方向に移動せしめられ得るよう
になっている。Further, the capillary 4 can be moved in the XY directions by an XY table (not shown).
【0004】このように構成されたワイヤボンディング
装置1によれば、先づ、半導体チップ5aが備えられた
基板5が、テーブル2上に載置され、この状態から、キ
ャピラリ4は、XYテーブルの移動によって、第一のボ
ンディング位置(例えば図4にて符合Aで示す位置)に
持ち来され、トーチユニット3より所定距離だけ高い位
置において、その下端から下方に突出している金等から
成るボンディングワイヤ4aの先端と該トーチユニット
3との間で放電させることにより、該ボンディングワイ
ヤ4aの先端にイニシャルボール4bを形成する。According to the wire bonding apparatus 1 thus constructed, the substrate 5 provided with the semiconductor chip 5a is first placed on the table 2, and from this state, the capillary 4 becomes an XY table. The bonding wire made of gold or the like, which is brought to a first bonding position (for example, a position indicated by symbol A in FIG. 4) by the movement, and which protrudes downward from the lower end thereof at a position higher than the torch unit 3 by a predetermined distance. By discharging between the tip of the bonding wire 4a and the torch unit 3, an initial ball 4b is formed at the tip of the bonding wire 4a.
【0005】続いて、該キャピラリ4は、半導体チップ
5aの表面高さまで下降せしめられ、該キャピラリ4
が、ボンディングワイヤ4aの先端のイニシャルボール
4bを、該半導体チップ5aに対して押圧することによ
り、該イニシャルボール4bが、半導体チップ5aに圧
着され得る。Subsequently, the capillary 4 is lowered to the surface height of the semiconductor chip 5a, and the capillary 4
However, by pressing the initial ball 4b at the tip of the bonding wire 4a against the semiconductor chip 5a, the initial ball 4b can be pressure-bonded to the semiconductor chip 5a.
【0006】その後、該キャピラリ4は、上方に向かっ
てボンディングワイヤ4aを繰り出しながら上昇すると
共に、XYテーブルの移動によって、第二のボンディン
グ位置(例えば図4にて符号Bで示す位置)に持ち来さ
れる。Thereafter, the capillary 4 is raised while feeding the bonding wire 4a upward, and is brought to a second bonding position (for example, a position indicated by a symbol B in FIG. 4) by moving the XY table. To be done.
【0007】次に、該キャピラリ4は、基板5の表面高
さまで下降せしめられ、該キャピラリ4が、ボンディン
グワイヤ4aを、該基板5に対して押圧することによ
り、該ボンディングワイヤ4aが、基板5に圧着され得
る。かくして、一つのワイヤボンディング工程が終了す
る。Next, the capillary 4 is lowered to the surface height of the substrate 5, and the capillary 4 presses the bonding wire 4a against the substrate 5, so that the bonding wire 4a is moved to the substrate 5. Can be crimped onto. Thus, one wire bonding process is completed.
【0008】ここで、キャピラリ4は、例えば図5に示
すように、第一のボンディング位置Aから上昇した後、
水平方向に移動して、さらに下降せしめられて、第二の
ボンディング位置に持ち来されることにより、図6に示
すようなボンディングワイヤ形状が得られる。この場合
は、キャピラリ4は、第一のボンディング位置から第二
のボンディング位置まで真っ直に距離Lだけ移動せしめ
られることから、ボンディング速度は速い。Here, the capillary 4 is raised from the first bonding position A, as shown in FIG.
By moving in the horizontal direction, further lowering it, and bringing it to the second bonding position, a bonding wire shape as shown in FIG. 6 is obtained. In this case, since the capillary 4 is moved straight from the first bonding position to the second bonding position by the distance L, the bonding speed is high.
【0009】しかしながら、このようなキャピラリ4の
移動(以下ノーマルモードという)においては、キャピ
ラリ4が第一のボンディング位置から第二のボンディン
グ位置まで水平移動する際に、ボンディングワイヤを第
二のボンディング位置の方向に引っ張ることになるた
め、場合によっては、ワイヤー高さが低く、チップエッ
ジに接触してしまうことがあった。However, in such a movement of the capillary 4 (hereinafter referred to as a normal mode), when the capillary 4 horizontally moves from the first bonding position to the second bonding position, the bonding wire is moved to the second bonding position. In some cases, the wire height is low, and the tip edge may come into contact with the chip edge.
【0010】このため、キャピラリ4が第一のボンディ
ング位置Aから上方に移動する際に、図7に示すよう
に、キャピラリ4をXYテーブルを第二のボンディング
位置Bとは逆方向に僅かに距離ΔLだけ一旦戻した後、
第二のボンディング位置Bに向かって、キャピラリ4を
水平方向に移動させながら下降させることにより、円弧
状に第二のボンディング位置Bまで移動させる方法が知
られている。この方法は、リバースモードといい、図8
に示すようなボンディングワイヤの形状が得られる。Therefore, when the capillary 4 moves upward from the first bonding position A, as shown in FIG. 7, the capillary 4 is moved slightly away from the XY table in the direction opposite to the second bonding position B. After returning by ΔL once,
A method is known in which the capillary 4 is moved horizontally while moving downward toward the second bonding position B to move it in an arc shape to the second bonding position B. This method is called reverse mode.
The shape of the bonding wire as shown in FIG.
【0011】[0011]
【発明が解決しようとする課題】しかしながら、このよ
うなワイヤボンディング装置1におけるリバースモード
においては、キャピラリ4が、一旦第二のボンディング
位置とは逆方向にリバースされることから、ボンディン
グ速度が比較的遅くなってしまうという問題があると共
に、ボンディングワイヤの形状に無理があるため、第二
のボンディング位置におけるボンディングが外れてしま
うことがあった。However, in the reverse mode in such a wire bonding apparatus 1, since the capillary 4 is once reversed in the direction opposite to the second bonding position, the bonding speed is relatively high. In addition to the problem of being late, the shape of the bonding wire is unreasonable, so that the bonding at the second bonding position may be lost.
【0012】本発明は、以上の点に鑑み、ワイヤボンデ
ィングがより高速に且つ確実に行なわれ得るようにし
た、ワイヤボンディング装置を提供することを目的とし
ている。In view of the above points, the present invention has as its object the provision of a wire bonding apparatus in which wire bonding can be performed at a higher speed and reliably.
【0013】[0013]
【課題を解決するための手段】上記目的は、本発明によ
れば、ワイヤボンディングすべきワークを載置するテー
ブルと、該テーブルの上方にて、ワーク表面まで上下動
可能に支持され且つ下端から下方に繰り出され得るボン
ディングワイヤを有するキャピラリと、該キャピラリを
XY方向に移動させるXYテーブルと、を含んでいる、
ワイヤボンディング装置において、上記XYテーブル
が、ボンディング時にキャピラリを第一ボンディング位
置から第二ボンディング位置まで移動させる第一テーブ
ルと、該第一テーブルに対してXY方向に移動可能に支
持され且つボンディング時にリバース動作のみを行なう
第二テーブルとから構成されていることを特徴とする、
ワイヤボンディング装置により、達成される。According to the present invention, the above object is to provide a table on which a work to be wire-bonded is placed, and above the table, the work surface is supported movably up and down and from the lower end. A capillary having a bonding wire that can be extended downward, and an XY table for moving the capillary in XY directions,
In a wire bonding apparatus, the XY table is a first table that moves a capillary from a first bonding position to a second bonding position during bonding, and a XY table that is supported movably in the XY directions with respect to the first table and reverses during bonding. It is characterized in that it is composed of a second table that only operates,
This is achieved by a wire bonding device.
【0014】[0014]
【作用】上記構成によれば、キャピラリが第一のボンデ
ィング位置から上昇する際には、XYテーブルの第二テ
ーブルの移動によってリバースが行なわれると共に、キ
ャピラリが第一のボンディング位置から第二のボンディ
ング位置まで水平移動する場合には、XYテーブルの第
一テーブルによって移動が行なわれる。従って、水平移
動はXYテーブルの第一テーブルのみにより行なわれ
る。According to the above construction, when the capillary is raised from the first bonding position, the reverse is performed by the movement of the second table of the XY table, and the capillary is moved from the first bonding position to the second bonding position. When moving horizontally to the position, the movement is performed by the first table of the XY table. Therefore, the horizontal movement is performed only by the first table of the XY table.
【0015】これにより、リバース動作は、XYテーブ
ルのうち、第二テーブルに分離され、第一テーブルは、
キャピラリを第一のボンディング位置から第二のボンデ
ィング位置まで移動せしめることから、従来のノーマル
モードと場合と同様の速いボンディング速度が得られる
ことになる。As a result, the reverse operation is separated into the second table of the XY table, and the first table is
Since the capillary is moved from the first bonding position to the second bonding position, the same high bonding speed as in the conventional normal mode can be obtained.
【0016】[0016]
【実施例】以下、図面に示した実施例に基づいて、本発
明を詳細に説明する。図1は、本発明によるワイヤダイ
ボンディング装置の一実施例を示している。図1におい
て、ワイヤボンディング装置10は、ボンディングヘッ
ド(図示せず)に固定されたテーブル11と、上記テー
ブル11の上方に張り出したトーチユニット12と、該
トーチユニット12の上方にて下降可能に支持されたキ
ャピラリ13とから構成されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below based on the embodiments shown in the drawings. FIG. 1 shows an embodiment of a wire die bonding apparatus according to the present invention. In FIG. 1, a wire bonding apparatus 10 includes a table 11 fixed to a bonding head (not shown), a torch unit 12 projecting above the table 11, and a descent support above the torch unit 12. And a capillary 13 that has been formed.
【0017】さらに、上記キャピラリ13は、XYテー
ブル14によりXY方向に移動せしめられ得るようにな
っていると共に、支持アーム14aが、図示しない揺動
装置によって、XYテーブル14の回転軸14bの周り
に揺動せしめられることにより、上下方向に移動可能に
なっている。Further, the capillary 13 can be moved in the XY directions by the XY table 14, and the supporting arm 14a is moved around the rotary shaft 14b of the XY table 14 by a swinging device (not shown). By being rocked, it can move in the vertical direction.
【0018】以上の構成は、図4に示した従来のワイヤ
ボンディング装置1と同様の構成であるが、本発明実施
例によるワイヤボンディング装置10においては、上記
XYテーブル14は、二段構成になっている、即ち、第
一テーブル15と、該第一テーブル15に設けられた第
二テーブル16とから構成されている。The above-mentioned structure is similar to the conventional wire bonding apparatus 1 shown in FIG. 4, but in the wire bonding apparatus 10 according to the embodiment of the present invention, the XY table 14 has a two-stage structure. That is, it is composed of the first table 15 and the second table 16 provided on the first table 15.
【0019】ここで、上記XYテーブル14の第一テー
ブル15は、従来のXYテーブルと同様に、キャピラリ
13を第一のボンディング位置から第二のボンディング
位置まで移動させるために、駆動手段17によって水平
方向に移動せしめられる。この駆動手段17は、図示の
場合、テーブル11上にてモータ17aにより回転駆動
せしめられるボールネジ17bと、第一テーブル15に
取り付けられ且つ該ボールネジ17bに螺合するナット
部17cとから構成されているが、第一テーブル15が
XY方向に移動可能であれば、他の任意の構成でもよ
い。Here, like the conventional XY table, the first table 15 of the XY table 14 is horizontally moved by the driving means 17 in order to move the capillary 13 from the first bonding position to the second bonding position. It can be moved in the direction. In the illustrated case, the driving means 17 is composed of a ball screw 17b which is driven to rotate by a motor 17a on the table 11, and a nut portion 17c which is attached to the first table 15 and is screwed to the ball screw 17b. However, any other configuration may be used as long as the first table 15 can be moved in the XY directions.
【0020】また、第二テーブル16は、該第一テーブ
ル15上にて、キャピラリ13をリバース動作させるた
めに、駆動手段18によって水平方向に移動せしめられ
るようになっている。この駆動手段18は、図示の場
合、第一テーブル15上にてモータ18aにより回転駆
動せしめられるボールネジ18bと、第二テーブル16
に取り付けられ且つ該ボールネジ18bに螺合するナッ
ト部18cとから構成されているが、第二テーブル16
がXY方向に移動可能であれば、他の任意の構成でもよ
い。The second table 16 can be moved horizontally on the first table 15 by the driving means 18 in order to reverse the capillary 13. In the illustrated case, the driving means 18 includes a ball screw 18b which is rotationally driven on the first table 15 by a motor 18a, and a second table 16.
And a nut portion 18c that is attached to the ball screw 18b and is screwed into the ball screw 18b.
Other configurations may be used as long as can be moved in the XY directions.
【0021】これにより、キャピラリ13は、第一テー
ブル15によって、第一のボンディング位置から第二の
ボンディング位置まで水平移動せしめられると共に、第
一のボンディング位置から上昇せしめられる際に、第二
テーブル16によってリバース動作せしめられることに
なる。As a result, the capillary 13 is horizontally moved from the first bonding position to the second bonding position by the first table 15 and is moved upward from the first bonding position when the second table 16 is moved. Reverse operation will be performed.
【0022】本発明実施例によるワイヤボンディング装
置10は、以上のように構成されており、先づ、半導体
チップ19aが備えられた基板19が、テーブル11上
に載置され、この状態から、XYテーブル14の第一テ
ーブル15が駆動装置17により水平方向に移動せしめ
られることにより、キャピラリ13は、第一のボンディ
ング位置(例えば図1にて符合Aで示す位置)に持ち来
され、トーチユニット12より所定距離だけ高い位置に
おいて、その下端から下方に突出している金等から成る
ボンディングワイヤ13aの先端と該トーチユニット1
2との間で放電させることにより、該ボンディングワイ
ヤ13aの先端にイニシャルボール13bを形成する。The wire bonding apparatus 10 according to the embodiment of the present invention is configured as described above. First, the substrate 19 provided with the semiconductor chip 19a is placed on the table 11, and from this state, XY When the first table 15 of the table 14 is moved in the horizontal direction by the driving device 17, the capillaries 13 are brought to the first bonding position (for example, the position indicated by reference symbol A in FIG. 1) and the torch unit 12 is moved. At a position higher by a predetermined distance, the tip of the bonding wire 13a made of gold or the like protruding downward from the lower end and the torch unit 1
An electric ball 13b is formed on the tip of the bonding wire 13a by discharging between the bonding ball 13 and the wire 2.
【0023】続いて、該キャピラリ13は、半導体チッ
プ19aの表面高さまで下降せしめられ、該キャピラリ
13が、ボンディングワイヤ13aの先端のイニシャル
ボール13bを、該半導体チップ19aに対して押圧す
ることにより、該イニシャルボール13bが、半導体チ
ップ19aに圧着され得る。Then, the capillary 13 is lowered to the surface height of the semiconductor chip 19a, and the capillary 13 presses the initial ball 13b at the tip of the bonding wire 13a against the semiconductor chip 19a. The initial ball 13b can be pressure bonded to the semiconductor chip 19a.
【0024】次に、該キャピラリ13は、上方に向かっ
て上昇すると同時に、XYテーブル14の第二テーブル
16の移動によって、リバース動作する。この際、キャ
ピラリ13は、XYテーブル14の第一テーブル15の
移動によって、水平移動せしめられると共に、基板19
の表面高さまで下降せしめられることにより、第二のボ
ンディング位置(例えば図1にて符号Bで示す位置)に
持ち来される。Next, the capillary 13 moves upward, and at the same time, the second operation of the second table 16 of the XY table 14 causes the reverse operation. At this time, the capillary 13 is moved horizontally by the movement of the first table 15 of the XY table 14, and the substrate 19 is moved.
It is brought to the second bonding position (for example, the position indicated by reference character B in FIG. 1) by being lowered to the surface height.
【0025】これにより、該キャピラリ13は、ボンデ
ィングワイヤ13aを、該基板19に対して押圧するこ
とにより、該ボンディングワイヤ13aが、基板19に
圧着され得る。かくして、一つのワイヤボンディング工
程が終了する。As a result, the capillary 13 presses the bonding wire 13a against the substrate 19 so that the bonding wire 13a can be pressed onto the substrate 19. Thus, one wire bonding process is completed.
【0026】ここで、キャピラリ13は、例えば図2に
示すように、第一のボンディング位置Aから上昇した
後、水平方向に移動すると同時に下降せしめられて、円
弧状に第二のボンディング位置Bに持ち来される。この
際、キャピラリ13は、第一のボンディング位置Aから
上昇すると同時に、XYテーブル14の第二テーブル1
6の移動によって、図2にて点線で示すように、リバー
ス動作することになる。かくして、図3に示すようなボ
ンディングワイヤ形状が得られる。その際、XYテーブ
ル14の第二テーブル15によってキャピラリ13のリ
バース動作が行なわれることから、ボンディングワイヤ
13aが引っ張られることなく、確実にワイヤボンディ
ングが行なわれ得ることになる。Here, as shown in FIG. 2, for example, the capillary 13 moves from the first bonding position A, then moves in the horizontal direction, and at the same time, is lowered to the second bonding position B in an arc shape. Be brought. At this time, the capillary 13 is raised from the first bonding position A and at the same time, the second table 1 of the XY table 14 is moved.
By the movement of 6, the reverse operation is performed as shown by the dotted line in FIG. Thus, the bonding wire shape as shown in FIG. 3 is obtained. At this time, since the second table 15 of the XY table 14 performs the reverse operation of the capillary 13, the wire bonding can be surely performed without pulling the bonding wire 13a.
【0027】この場合、該キャピラリ13のリバース動
作は、XYテーブル14の第二テーブル16の移動のみ
により行なわれることから、キャピラリ13の第一のボ
ンディング位置から第二のボンディング位置までの移動
は、XYテーブル14の第一テーブル15が、リバース
動作を行なわずに、真っ直に水平移動することにより、
行なわれる。従って、キャピラリ13の第一のボンディ
ング位置から第二のボンディング位置までの移動は、従
来のノーマルモードと同等の比較的速いボンディング速
度で行なわれ得ることになる。In this case, since the reverse operation of the capillary 13 is performed only by moving the second table 16 of the XY table 14, the movement of the capillary 13 from the first bonding position to the second bonding position is The first table 15 of the XY table 14 moves horizontally straight without performing reverse operation,
Done. Therefore, the movement of the capillary 13 from the first bonding position to the second bonding position can be performed at a relatively high bonding speed equivalent to that in the conventional normal mode.
【0028】[0028]
【発明の効果】以上述べたように、本発明によれば、キ
ャピラリのリバース動作は、XYテーブルのうち、第二
テーブルに分離され、XYテーブルの第一テーブルが、
キャピラリを第一のボンディング位置から第二のボンデ
ィング位置まで移動せしめることから、従来のノーマル
モードと場合と同様の速いボンディング速度が得られる
ことになる。As described above, according to the present invention, the reverse operation of the capillary is separated into the second table of the XY table, and the first table of the XY table is
Since the capillary is moved from the first bonding position to the second bonding position, the same high bonding speed as in the conventional normal mode can be obtained.
【0029】また、XYテーブルの第二テーブルによっ
てキャピラリのリバースが行なわれることから、ボンデ
ィングワイヤが引っ張られることなく、確実にワイヤボ
ンディングが行なわれ得ることになる。Further, since the capillary is reversed by the second table of the XY table, the wire bonding can be surely performed without pulling the bonding wire.
【0030】かくして、本発明によれば、ワイヤボンデ
ィングがより高速に且つ確実に行なわれ得るようにし
た、極めて優れたワイヤボンディング装置が提供され得
ることになる。Thus, according to the present invention, it is possible to provide an extremely excellent wire bonding apparatus which enables wire bonding to be performed at higher speed and reliably.
【図1】本発明によるワイヤボンディング装置の一実施
例の構成を示す概略側面図である。FIG. 1 is a schematic side view showing the configuration of an embodiment of a wire bonding apparatus according to the present invention.
【図2】図1のワイヤボンディング装置におけるキャピ
ラリの動きを示す軌跡図である。FIG. 2 is a trajectory diagram showing the movement of the capillaries in the wire bonding apparatus of FIG.
【図3】図1のワイヤボンディング装置によるボンディ
ングワイヤの形状を示す拡大図である。FIG. 3 is an enlarged view showing a shape of a bonding wire by the wire bonding apparatus of FIG.
【図4】従来のワイヤボンディング装置の一例を示す概
略側面図である。FIG. 4 is a schematic side view showing an example of a conventional wire bonding apparatus.
【図5】図4のワイヤボンディング装置のノーマルモー
ドにおけるキャピラリの移動を示す軌跡図である。5 is a locus diagram showing movement of capillaries in a normal mode of the wire bonding apparatus of FIG. 4. FIG.
【図6】図5のキャピラリ移動による、ボンディングワ
イヤの形状を示す拡大図である。6 is an enlarged view showing the shape of a bonding wire by moving the capillary of FIG.
【図7】図4のワイヤボンディング装置の円弧補間−リ
バースモードにおけるキャピラリの移動を示す軌跡図で
ある。7 is a trajectory diagram showing movement of the capillaries in the circular interpolation-reverse mode of the wire bonding apparatus of FIG.
【図8】図5のキャピラリ移動による、ボンディングワ
イヤの形状を示す拡大図である。8 is an enlarged view showing the shape of a bonding wire by moving the capillary of FIG.
10 ワイヤボンディング装置 11 テーブル 12 トーチユニット 13 キャピラリ 14 XYテーブル 14a 支持アーム 15 第一テーブル 16 第二テーブル 17 駆動装置 18 駆動装置 19 基板 19a 半導体チップ 10 Wire Bonding Device 11 Table 12 Torch Unit 13 Capillary 14 XY Table 14a Support Arm 15 First Table 16 Second Table 17 Drive Device 18 Drive Device 19 Substrate 19a Semiconductor Chip
Claims (1)
するテーブルと、該テーブルの上方にて、ワーク表面ま
で上下動可能に支持され且つ下端から下方に繰り出され
得るボンディングワイヤを有するキャピラリと、該キャ
ピラリをXY方向に移動させるXYテーブルと、を含ん
でいる、ワイヤボンディング装置において、 上記XYテーブルが、ボンディング時にキャピラリを第
一ボンディング位置から第二ボンディング位置まで移動
させる第一テーブルと、該第一テーブルに対してXY方
向に移動可能に支持され且つボンディング時にリバース
動作のみを行なう第二テーブルとから構成されているこ
とを特徴とする、ワイヤボンディング装置。1. A capillary having a table on which a work to be wire-bonded is placed, a capillary having a bonding wire supported above the table so as to be movable up and down to the surface of the work and extending downward from a lower end, and the capillary. A XY table for moving in the XY directions, a wire bonding apparatus, wherein the XY table moves a capillary from a first bonding position to a second bonding position during bonding, and the first table. And a second table that is movably supported in the XY directions and that only performs a reverse operation during bonding.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6100622A JPH07283262A (en) | 1994-04-13 | 1994-04-13 | Wire bonding device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6100622A JPH07283262A (en) | 1994-04-13 | 1994-04-13 | Wire bonding device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07283262A true JPH07283262A (en) | 1995-10-27 |
Family
ID=14278943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6100622A Pending JPH07283262A (en) | 1994-04-13 | 1994-04-13 | Wire bonding device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07283262A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6196445B1 (en) * | 1995-12-18 | 2001-03-06 | Micron Technology, Inc. | Method for positioning the bond head in a wire bonding machine |
-
1994
- 1994-04-13 JP JP6100622A patent/JPH07283262A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6196445B1 (en) * | 1995-12-18 | 2001-03-06 | Micron Technology, Inc. | Method for positioning the bond head in a wire bonding machine |
US6223967B1 (en) | 1995-12-18 | 2001-05-01 | Micron Technology, Inc. | Extended travel wire bonding machine |
US6253990B1 (en) * | 1995-12-18 | 2001-07-03 | Micron Technology, Inc. | Method for positioning the bond head in a wire bonding machine |
US6253991B1 (en) | 1995-12-18 | 2001-07-03 | Micron Technology, Inc. | Extended travel wire bonding machine |
US6276594B1 (en) * | 1995-12-18 | 2001-08-21 | Micron Technology, Inc. | Method for positioning the bond head in a wire bonding machine |
US6321970B1 (en) * | 1995-12-18 | 2001-11-27 | Micron Technology, Inc. | Wire bonding machine |
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