JPH0727635Y2 - High frequency hybrid integrated circuit - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a high frequency hybrid integrated circuit which operates in a high frequency band.

[Conventional technology]

FIG. 3 is a perspective view of a portion where a semiconductor is assembled on a copper plate of a conventional high frequency hybrid integrated circuit, and FIG. 4 is a sectional view taken along the line BB in FIG.

In FIGS. 3 and 4, reference numeral 1 denotes a substrate having circuits on the upper surface and a ground electrode on the lower surface to form a high frequency hybrid integrated circuit, and 2 denotes copper fixed on the substrate 1 by a method such as soldering. Blocks 3 are mounted on said copper block 2,
Semiconductor chips which are active elements of high frequency hybrid integrated circuits, 4
Is a circuit pattern on the substrate 1, 5 is a ground pattern on the upper surface of the substrate 1 to which the copper block 2 is attached, 6 is a radiating fin attached to the lower surface of the substrate 1, 7 is the semiconductor chip 3 A wire connecting the copper block 2 and the circuit pattern 4 is a through hole connecting the ground electrode on the entire lower surface of the substrate 1 and the ground pattern 5 on the upper surface.

The semiconductor chip 3 is connected to the circuit pattern 4 and the copper block 2 by the wire 7. At this time, copper block 2
Is connected to the heat dissipation fin 6 through the ground pattern 5 and the through hole 8, the common terminal of the semiconductor chip 3 is grounded, and the parts other than the common terminal are connected to the circuits of other parts.

Further, the heat generated in the semiconductor chip 3 is radiated from the heat radiating fin 6 through the substrate 1 by expanding the cross-sectional area through which the heat flows by the copper block 2.

[Problems to be solved by the device]

The conventional high-frequency hybrid integrated circuit configured as described above is
The common terminal of the semiconductor chip 3 is a wire 7-copper block 2-
It is grounded to the heat dissipation fin 6 through the through hole 8, and when the operating frequency becomes high, the reactance component between the heat dissipation fin 6 and the common terminal of the semiconductor chip 3 becomes large,
There is a problem that the characteristics are deteriorated.

Also, in terms of heat dissipation, the heat generated in the semiconductor chip 3 is dissipated to the heat dissipation fins 6 through the copper block 2 and the substrate 1, so that there is a problem that the thermal resistance of the part of the substrate 1 increases.

The present invention has been made to eliminate the above-mentioned conventional problems, and reduces the reactance component and thermal resistance, reduces the reactance component between the common terminal of the semiconductor chip and the heat dissipation fin, and reduces the semiconductor chip. -To obtain a high-frequency hybrid integrated circuit that can reduce the thermal resistance between the heat dissipation fins.

[Means for Solving the Problems]

A high frequency hybrid integrated circuit according to the present invention is a semiconductor chip-
A copper block for reducing the thermal resistance between the heat radiation fins is projected to the outside of the substrate, the heat radiation fin is formed in an L-shaped cross section, and the copper block and the heat radiation fin are in direct contact with each other.

[Action]

In the high frequency hybrid integrated circuit according to the present invention, since the copper block to which the semiconductor chip is attached is in direct contact with the heat dissipation fin, a wire-copper block is connected from the common terminal of the semiconductor chip to the heat dissipation fin, and the through hole The reactance component can be reduced. Also in terms of heat dissipation, the heat generated in the semiconductor chip is radiated to the heat dissipation fins only through the copper block, so that the thermal resistance of the substrate part can be reduced.

〔Example〕

An embodiment of the present invention will be described below with reference to FIGS.

FIG. 1 is a diagram showing an embodiment of a high frequency hybrid integrated circuit of the present invention, which is a perspective view of a portion where a semiconductor chip is assembled on a copper block, and a sectional view taken along the line AA of FIG. Shown in the figure.

In FIGS. 1 and 2, 1 and 3 to 7 are the same as those shown in FIG. Reference numeral 2 denotes a copper block attached to the ground pattern 5 on the substrate 1, which has a structure protruding outside the substrate 1, that is, a structure in which it is made to project from the end of the substrate and directly contacts the heat dissipation fin 6.

Reference numeral 9 is a bent portion formed in the L-shaped cross section of the heat dissipation fin 6, and the protruding portion of the copper block 2 contacts this portion. The semiconductor chip 3 is connected to the circuit pattern 4 and the copper block 2 by the wire 7 and operates.

As described above, since the copper block 2 protrudes from the substrate 1 and is in direct contact with the heat dissipation fin 6 and the bent portion 9 of the heat dissipation fin 6, the common terminal of the semiconductor chip 3 and the heat dissipation fin 6 are connected to the wire-7- The copper block 2 is connected by the bent portion 9 of the heat dissipation fin 6, and the reactance component is reduced.

Further, the heat generated in the semiconductor chip 3 is radiated from the heat radiating fins 6 through the bent portions 9 of the copper block 2 and the heat radiating fins 6, so that the thermal resistance can be reduced.

[Effect of device]

As described above, according to the present invention, the copper block for reducing the thermal resistance between the semiconductor chip and the heat dissipation fin is projected to the outside of the substrate, and the heat dissipation fin is formed into an L-shaped cross section.
Since the copper block and the heat dissipation fin are in direct contact with each other, the reactance component from the common terminal of the semiconductor chip to the heat dissipation fin can be reduced, the characteristics are improved, and the thermal resistance can be reduced. There is an effect that the effect can be improved.

[Brief description of drawings]

FIG. 1 is a perspective view showing an embodiment of the high frequency hybrid integrated circuit of the present invention, FIG. 2 is a sectional view taken along line AA of FIG. 1, and FIG.
FIG. 4 is a perspective view of a conventional high frequency hybrid integrated circuit, and FIG. 4 is a sectional view taken along the line BB in FIG. In the figure, 1 is a substrate, 2 is a copper block, 3 is a semiconductor chip, 4 is a circuit pattern, 5 is a ground pattern, 6 is a heat radiation fin, 7 is a wire, and 9 is a bent portion having an L-shaped cross section. The same reference numerals in each drawing indicate the same or corresponding parts.

Claims (1)

[Scope of utility model registration request] 1. A ground pattern and a circuit pattern are formed on a substrate, a radiating fin is attached to a back surface, and a semiconductor chip is mounted on a copper block mounted on the ground pattern. In the hybrid integrated circuit in which the common terminal, the copper block, and the circuit pattern are connected by wires, respectively.
The copper block for reducing the thermal resistance between the heat dissipation fins is projected to the outside of the substrate, the heat dissipation fin is formed in an L-shaped cross section, and the copper block and the heat dissipation fin are in direct contact with each other. High frequency hybrid integrated circuit.