JPH0725618B2 - A-l N-type tungsten metallized structure - Google Patents
A-l N-type tungsten metallized structureInfo
- Publication number
- JPH0725618B2 JPH0725618B2 JP63167055A JP16705588A JPH0725618B2 JP H0725618 B2 JPH0725618 B2 JP H0725618B2 JP 63167055 A JP63167055 A JP 63167055A JP 16705588 A JP16705588 A JP 16705588A JP H0725618 B2 JPH0725618 B2 JP H0725618B2
- Authority
- JP
- Japan
- Prior art keywords
- tungsten
- aln
- layer
- paste
- metallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims description 37
- 229910052721 tungsten Inorganic materials 0.000 title claims description 32
- 239000010937 tungsten Substances 0.000 title claims description 32
- 239000000203 mixture Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 34
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 30
- 239000000758 substrate Substances 0.000 description 11
- 239000000654 additive Substances 0.000 description 7
- 230000000996 additive effect Effects 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
Landscapes
- Ceramic Products (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、窒化アルミニウム（AlN）体のタングステン
のメタライズ構造に関する。The present invention relates to an aluminum nitride (AlN) body of tungsten metallized structure.
半導体デバイスの高密度化、高速化および高出力化に伴
う発熱量の増大に対応するために、基板材料として放熱
性に優れたものが要求されてきている。放熱性に優れた
基板材料として、従来より常用されてきたAl2O3に代わ
りAlNからなる基板が注目されている。In order to cope with an increase in the amount of heat generated due to higher density, higher speed, and higher output of semiconductor devices, a substrate material having excellent heat dissipation has been required. As a substrate material having excellent heat dissipation, a substrate made of AlN is attracting attention in place of Al 2 O 3 which has been conventionally used.
しかしながら、半導体装置を実装する基板として用いる
には、放熱性の問題以前に、基板表面をメタライズする
技術が確立されねばならない。AlN基板のメタライズ法
としては、タングステン粉末と有機ビヒクルとを混合し
てなるタングステンペーストをAlNグリーンシート上に
印刷し、焼成する方法が知られている。However, for use as a substrate on which a semiconductor device is mounted, a technique for metallizing the substrate surface must be established before the problem of heat dissipation. As a method of metallizing an AlN substrate, a method is known in which a tungsten paste obtained by mixing tungsten powder and an organic vehicle is printed on an AlN green sheet and baked.
しかしながら、タングステン粉末と有機ビヒクルのみを
含む、いわゆるタングステ単味のペーストを用いた場
合、AlNが金属との濡れ性に劣るためAlNとタングステン
との間に十分な接合強度を得ることが困難であった。However, when a so-called Tungste plain paste containing only tungsten powder and an organic vehicle is used, it is difficult to obtain sufficient bonding strength between AlN and tungsten because AlN has poor wettability with a metal. It was
よって、本発明の目的は、AlNに対して十分な接合強度
を有するタングステンのメタライズ構造を提供すること
にある。Therefore, an object of the present invention is to provide a metallized structure of tungsten having a sufficient bonding strength to AlN.
本発明のAlN体に対するタングステンによるメタライズ
構造は、該AlN体と同一組成のものが合計の35〜90重量
％と、タングステンが10〜65重量％からなる第１層と、 上記第１層の上に、タングステンからなる第２層とが形
成されていることを特徴とするものである。The metallized structure of tungsten for the AlN body according to the present invention has a total composition of 35 to 90% by weight of the same composition as the AlN body, a first layer comprising 10 to 65% by weight of tungsten, and a first layer above the first layer. And a second layer made of tungsten is formed on the substrate.
本願発明者は、タングステン粉末と有機ビヒクルのみか
らなるタングステン単味のペーストをAlNグリーンシー
トに塗布・乾燥した状態で焼成したとしても、AlNに対
して十分な接合強度を有するタングステンのメタライズ
層が得られないことを考慮し、種々のタングステンペー
ストを作成して鋭意検討した結果、AlNグリーンシート
と同一組成の添加材をタングステンペースト中に混入す
れば、AlN体との間の接合強度を高め得ることを見出
し、本発明を成すに至った。The present inventor has obtained a tungsten metallized layer having sufficient bonding strength with respect to AlN, even if a tungsten plain paste consisting only of tungsten powder and an organic vehicle is applied to an AlN green sheet and baked in a dried state. In consideration of the fact that various tungsten pastes were created, and as a result of intensive studies, it was found that if an additive material having the same composition as the AlN green sheet is mixed into the tungsten paste, the bonding strength with the AlN body can be increased. The present invention has been completed and the present invention has been accomplished.
すなわち、本発明は、第１のタングステンペースト中に
AlN体と同一組成の添加剤を混入し、これをメタライズ
することにより、第１のタングステンメタライズ層をAl
N体に強固に接合させ、さらにこの第１のタングステン
メタライズ層の上に、該第１のタングステンメタライズ
層と強固に接合し得るタングステンからなる第２のメタ
ライズ層を形成することにより、AlN体のメタライズ構
造を提供するものである。That is, the present invention is
By mixing an additive having the same composition as the AlN body and metallizing the additive, the first tungsten metallized layer is formed into Al.
By firmly bonding to the N-body and further forming a second metallization layer made of tungsten capable of firmly bonding to the first tungsten metallization layer on the first tungsten metallization layer, It provides a metallization structure.
後述する実施例から明らかなように、本発明によれば、
タングステンからなる第２のメタライズ層が、第１のタ
ングステンメタライズ層を介してAlN体に強固に接合さ
れる。従って、従来のタングステン単味のペーストを用
いた場合に比べて、AlNに対するタングステン層の接合
強度を飛躍的に高めることができるので、放熱性に優れ
たAlN基板を効果的にメタライズすることができ、半導
体装置の高密度化、高速化、および高出力化に対応する
ことが可能となる。As apparent from the examples described below, according to the present invention,
The second metallization layer made of tungsten is firmly bonded to the AlN body via the first tungsten metallization layer. Therefore, as compared with the case of using the conventional paste containing only tungsten, the bonding strength of the tungsten layer with respect to AlN can be dramatically increased, so that an AlN substrate with excellent heat dissipation can be effectively metallized. Therefore, it becomes possible to cope with higher density, higher speed, and higher output of the semiconductor device.
焼結助剤としてY2O3を３重量％添加してなるAlNグリー
ンシートを用意した。また、第１のタングステンペース
トとして、タングステン粉末およびAlNグリーンシート
と同じ組成の添加剤を第１表に示す割合で混合し、さら
に必要量の有機ビヒクルを加えたものを用意した。さら
に、タングステン粉末に必要量の有機ビヒクルを加えた
ものを第２のタングステンペーストとして用意した。An AlN green sheet prepared by adding 3% by weight of Y 2 O 3 as a sintering aid was prepared. Further, as the first tungsten paste, a mixture was prepared by mixing the tungsten powder and the additive having the same composition as the AlN green sheet in the ratio shown in Table 1, and further adding the necessary amount of the organic vehicle. Further, a second tungsten paste prepared by adding a required amount of organic vehicle to tungsten powder was prepared.
AlNグリーンシートの表面に上記第１のタングステンペ
ーストを直径3mmの円板状に塗布し、乾燥した。次に、
第２のタングステンペーストを第１のタングステンペー
ストの上に塗布し、同じく乾燥させた。しかる後、グリ
ーンシート中のバインダーおよびペースト中の有機ビヒ
クルを飛散させ、脱バインダー処理を行った。非酸化性
雰囲気中で1850℃の温度で５時間焼成し、メタライズ層
を有するAlN焼結基板を得た。The first tungsten paste was applied to the surface of the AlN green sheet in the shape of a disk having a diameter of 3 mm and dried. next,
The second tungsten paste was applied on top of the first tungsten paste and also dried. After that, the binder in the green sheet and the organic vehicle in the paste were scattered and a binder removal treatment was performed. It was fired at a temperature of 1850 ° C. for 5 hours in a non-oxidizing atmosphere to obtain an AlN sintered substrate having a metallized layer.
この焼結基板上のメタライズ層に電気メッキによりNi層
を形成した。さらに、Ni層の上に直径2mmの銅製のワイ
ヤをはんだ付けし、試験試料を得た。A Ni layer was formed on the metallized layer on the sintered substrate by electroplating. Further, a copper wire having a diameter of 2 mm was soldered on the Ni layer to obtain a test sample.
上記試験試料のワイヤを引張り、ワイヤがAlN基板から
外れたときの引張り強度を測定した。測定結果を第１表
に併せて示す。The wire of the above test sample was pulled, and the tensile strength when the wire was detached from the AlN substrate was measured. The measurement results are also shown in Table 1.
第１表から明らかなように、試料番号１のように、第１
層中の添加剤の量が本発明の範囲より多いと、二層構造
とした効果がほとんど得られず、第１層と第２層との接
合強度が低下する。また、試料番号６のように、第１層
中の添加剤の量が本発明の範囲より少ないと、AlN体と
の接合強度が低下してしまう。 As is clear from Table 1, as in sample number 1, the first
When the amount of the additive in the layer is larger than the range of the present invention, the effect of forming the two-layer structure is hardly obtained, and the bonding strength between the first layer and the second layer decreases. If the amount of the additive in the first layer is less than the range of the present invention, as in Sample No. 6, the joint strength with the AlN body will decrease.
また、試料番号７のように一層構造（従来例のもの）で
は、やはり引張り強度は3.2Kg/mm2と小さかった。Further, the tensile strength of the single-layer structure (conventional example) as in Sample No. 7 was as small as 3.2 kg / mm 2 .
これに対して、本発明の範囲内である第１層中にAlN体
と同一組成のものを35〜90重量％含有させ、かつ二層構
造とした試料（試料番号２〜５）では、引張り強度が6.
0Kg/mm2以上であることがわかる。On the other hand, in the sample (Sample Nos. 2 to 5) in which the first layer, which is within the scope of the present invention, contained 35 to 90% by weight of the same composition as the AlN body and had a two-layer structure, Strength is 6.
It can be seen that it is 0 Kg / mm 2 or more.
以上の結果から、AlN体と同一組成の添加剤を本発明の
範囲だけ含ませた第１層と、タングステンからなる第２
層にて二層構造とすることにより、メタライズ層のAlN
への接合強度を飛躍的に高め得ることがわかる。From the above results, the first layer containing the additive having the same composition as the AlN body only within the scope of the present invention and the second layer containing tungsten
By forming a two-layer structure in layers, the AlN of the metallized layer
It can be seen that the bonding strength to the can be dramatically increased.
なお、上記実施例では、AlNグリーンシートの表面に二
層構造のメタライズ用タングステンペーストを印刷した
が、この二層構造のメタライズ用タングステンペースト
を印刷した後グリーンシートを重ね、積層体の内部にメ
タライズ層を位置させ、積層されたグリーンシートを圧
着・焼成してAlN焼結体中にメタライズ層を構成する方
法においても本発明のタングステンペーストを用いるこ
とができ、安定した内部導体を形成することができる。In the above example, the two-layer structure metallizing tungsten paste was printed on the surface of the AlN green sheet, but after the two-layer structure metallizing tungsten paste was printed, the green sheets were stacked and metallized inside the laminate. The tungsten paste of the present invention can also be used in the method of forming the metallized layer in the AlN sintered body by positioning the layers and pressing and firing the laminated green sheets to form a stable inner conductor. it can.
また、上記した実施例は、AlN体の焼結とメタライズを
同時に行ったが、焼結済のAlN体の表面上に二層構造の
メタライズ層を形成することによってもAlN体をタング
ステンとの接合強度の高いものが得られる。Further, in the above-mentioned examples, the sintering and metallization of the AlN body were performed at the same time.However, the AlN body was bonded to tungsten by forming a metallized layer having a two-layer structure on the surface of the sintered AlN body. High strength products can be obtained.
フロントページの続き (72)発明者 長井 昭 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 (56)参考文献 特開 昭61−281089（ＪＰ，Ａ) 特開 昭62−207789（ＪＰ，Ａ) 特開 昭63−195183（ＪＰ，Ａ)Front Page Continuation (72) Inventor Akira Nagai 2-26-10 Tenjin Tenjin, Nagaokakyo-shi, Kyoto Inside Murata Manufacturing Co., Ltd. (56) References JP 61-281089 (JP, A) JP 62-207789 ( JP, A) JP-A-63-195183 (JP, A)
Claims (1)
テンが10〜65重量％からなる第１層と、 前記第１層の上に、タングステンからなる第２層とが形
成されていることを特徴とするAlN体のタングステンメ
タライズ構造。1. A first layer comprising 35 to 90% by weight of the same composition as the AlN body and 10 to 65% by weight of tungsten on the AlN body, and tungsten on the first layer. And a second layer formed of AlN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63167055A JPH0725618B2 (en) | 1988-07-05 | 1988-07-05 | A-l N-type tungsten metallized structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63167055A JPH0725618B2 (en) | 1988-07-05 | 1988-07-05 | A-l N-type tungsten metallized structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0218371A JPH0218371A (en) | 1990-01-22 |
| JPH0725618B2 true JPH0725618B2 (en) | 1995-03-22 |
Family
ID=15842563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63167055A Expired - Fee Related JPH0725618B2 (en) | 1988-07-05 | 1988-07-05 | A-l N-type tungsten metallized structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0725618B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019065464A1 (en) * | 2017-09-28 | 2019-04-04 | 京セラ株式会社 | Structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101011412B1 (en) * | 2004-11-12 | 2011-01-28 | 가부시끼가이샤 도꾸야마 | Method for producing metallized aluminum nitride substrate and substrate obtained thereby |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61281089A (en) * | 1985-05-31 | 1986-12-11 | 日本特殊陶業株式会社 | Surface structure of aluminum nitride base material |
| JPS62207789A (en) * | 1986-03-08 | 1987-09-12 | 日本特殊陶業株式会社 | Surface structure for aluminum nitride material and manufacture |
| JPS63195183A (en) * | 1987-02-06 | 1988-08-12 | 住友電気工業株式会社 | Method for manufacturing AlN sintered body with metallized surface |
-
1988
- 1988-07-05 JP JP63167055A patent/JPH0725618B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019065464A1 (en) * | 2017-09-28 | 2019-04-04 | 京セラ株式会社 | Structure |
| JPWO2019065464A1 (en) * | 2017-09-28 | 2020-09-17 | 京セラ株式会社 | Structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0218371A (en) | 1990-01-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |