JPH07235655A - Solid-state imaging device - Google Patents

Abstract

(57) [Abstract] [Purpose] To provide a solid-state imaging device capable of reducing moire caused by a color filter plate. A plurality of light receiving and accumulating sections formed on a semiconductor substrate for accumulating signal charges obtained by photoelectric conversion, and a signal charge reading section for reading out signal charges accumulated in the light receiving and accumulating section,
Vertical CCD for vertically transferring the read signal charges
A register unit, connected to the signal charge reading end of the vertical CCD register part, a horizontal register section for transferring signal charges read from the vertical CCD register part in the horizontal direction, a color filter 5 _G, 5 _R, 5 _B A row color filter arranged regularly in the column direction, and a color filter plate formed by arranging a plurality of row color filters in the row direction so that each color filter of adjacent row color filters is displaced by 1.5 pixels in the column direction. There is.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device,
In particular, it relates to a single plate type color solid-state imaging device.

[0002]

2. Description of the Related Art In recent years, due to the development of charge-coupled devices, image pickup devices such as television cameras and still cameras have become smaller and lighter. A solid-state imaging device using this type of charge-coupled device includes a photodiode array that accumulates signal charges obtained by photoelectrically converting input light, and a vertical CC that transfers the signal charges of the photodiode array.
It is composed of a D register section and a horizontal CCD register section.

FIG. 21 is a schematic diagram showing the structure of a conventional solid-state image pickup device, and FIG. 22 is a sectional view taken along the line XX 'of the pixel portion of the solid-state image pickup device shown in FIG. In FIG. 21, reference numeral 61 denotes a light receiving and accumulating portion for accumulating signal charges obtained by photoelectric conversion, and the signal charges are transferred in the vertical direction by the vertical CCD register part 50 including the signal charge transferring part 62. After being transferred in the horizontal direction by the horizontal CCD register 51, it is introduced into the signal charge detection unit 52.

In FIG. 22, reference numeral 60 denotes a semiconductor substrate, and the light receiving and accumulating portion 6 is provided on the surface of the semiconductor substrate 60.
The n-type impurity layer 61 which is 1, the n-type impurity layer 62 which is the signal charge transfer portion 62, and the p-type impurity layer 63 which is an element isolation layer are formed.

Above the semiconductor substrate 60, a signal charge read electrode 64, a signal charge transfer electrode 65, and a light shielding layer 67.
And are separated from each other by an insulating layer 66. A color filter plate 68 and a microlens 69 are provided above the insulating layer 66.

FIG. 23 is a sectional view showing a pixel portion of another conventional solid-state image pickup device. This shows a stacked type solid-state imaging device. In the figure, reference numeral 70 denotes a semiconductor substrate, and on the surface of the semiconductor substrate 70, a low-concentration n-type impurity layer 71 as a signal charge storage portion and a signal charge are formed. Low density n which is the transfer part
A type impurity layer 72 and a high-concentration p-type impurity layer 73, which is an element isolation layer, are formed.

A signal charge read electrode 74, a signal charge transfer electrode 75, and a lead electrode 77 are provided above the semiconductor substrate 70, and these are separated from each other by an insulating layer 76 ₁ .

[0008] On the extraction electrode 77 through the insulating layer _762, applied to the pixel electrode 78, the photoelectric conversion layer 79 made of a photoconductive material such as hydrogenated amorphous silicon, a voltage to the photoelectric conversion layer 79 Transparent electrode 80 (for example, ITO electrode), a light shielding layer 81, and a color filter 82
And a microlens 83 are sequentially provided.

FIG. 24 is a plan view of a color filter plate used in the conventional solid-state image pickup device. This color filter plate is composed of three types of color filters, and a green filter 55 _G is arranged in the first column, a red filter 55 _R is arranged in the second column, and a blue filter 55 _B is arranged in the third column. That is, color filters of the same color are arranged in the same column.

The conventional single-plate color solid-state image pickup device as described above has the following problems. That is, there is a problem that a sensitivity ineffective region is generated for each color signal (R signal, G signal, B signal), and as a result, the spatial sampling points are reduced for the incident optical image and moire is noticeable.

[0011]

As described above, the conventional single plate type color solid-state image pickup device has a problem of moire caused by the color filter plate. The present invention has been made in view of the above circumstances, and an object thereof is to provide a solid-state imaging device capable of reducing moire caused by a color filter plate.

[0012]

In order to achieve the above-mentioned object, a solid-state image pickup device according to the present invention (claim 1) is formed on a semiconductor substrate, and a signal charge obtained by photoelectrically converting input light. A plurality of light receiving and accumulating portions for accumulating, a signal charge reading portion adjacent to the light receiving and accumulating portion for reading the accumulated signal charges, and a vertical CCD register portion for vertically transferring the read signal charges, A horizontal register unit that is connected to the signal charge reading end of the vertical CCD register unit and horizontally transfers the signal charges read from the vertical CCD register unit; A row color filter formed by regularly arranging filters in the column direction, and a color filter plate formed by arranging a plurality of row color filters in the row direction so that each color filter of adjacent row color filters is displaced by 1.5 pixels in the column direction. Equipment Characterized in that was.

Another solid-state image pickup device according to the present invention (claim 2) includes a plurality of signal charge accumulating portions formed on a semiconductor substrate for accumulating signal charges obtained by photoelectrically converting input light. A signal charge reading unit that reads out the signal charges accumulated in the signal charge accumulating unit, a vertical CCD register unit that vertically transfers the read signal charges, and the vertical C
A horizontal register unit connected to the signal charge reading end of the CD register unit to transfer the signal charges read from the vertical CCD register unit in the horizontal direction, and a color filter of a plurality of colors provided on the signal charge storage unit. A row color filter that is regularly arranged in the column direction, and a color filter plate that is arranged in the row direction so that each color filter of adjacent row color filters is displaced by 1.5 pixels in the column direction. The reading direction of the signal charge stored in the signal charge storage section under the row color filters of the even rows and the reading of the signal charge stored in the signal charge storage section under the row color filters of the odd rows. The directions are opposite to each other.

Further, another solid-state image pickup device according to the present invention (claim 3) is provided on the signal charge storage section between the color filter plate and the signal charge storage section of the invention (claim 2). Is characterized in that a pixel electrode electrically connected to the signal charge storage portion and a photoelectric conversion film for photoelectrically converting the input light on the pixel electrode are provided.

Further, another solid-state image pickup device according to the present invention (claim 4) is formed on a semiconductor substrate, and has a plurality of signal charge storage portions for storing signal charges obtained by photoelectrically converting input light. A pixel electrode provided above the semiconductor substrate and electrically connected to the signal charge storage portion, a photoelectric conversion film provided on the pixel electrode, and a transparent electrode provided on the photoconductive film. A signal charge reading unit that reads out the signal charges accumulated in the signal charge accumulating unit, a vertical CCD register unit that vertically transfers the read signal charges, and a signal charge reading end of the vertical CCD register unit. A horizontal register unit that is connected and transfers the signal charges read out from the vertical CCD register unit in the horizontal direction, and color filters of a plurality of colors that are provided on the transparent electrode and are regularly arranged in the column direction. The color filter, to the color filters of adjacent rows color filter is shifted 1.5 pixels in the column direction,
It is characterized by comprising a plurality of color filter plates arranged in the row direction.

Another solid-state image pickup device according to the present invention (claim 5) is the above invention (claim 4), wherein the color filter plate is composed of color filters of three colors, and the row color filters of even rows. The signal charge storage section below and the signal charge storage section below the row color filters in the odd-numbered rows adjacent to the color filters in the even-numbered rows are different from each other in a triangular pixel formed of a total of three signal charge storage sections. It is characterized in that three transfer paths for transferring three color signals are provided.

Another solid-state image pickup device according to the present invention (claim 6) includes a plurality of signal charge accumulating portions formed on a semiconductor substrate for accumulating signal charges obtained by photoelectrically converting input light. A signal charge reading unit that reads out the signal charges accumulated in the signal charge accumulating unit, a vertical CCD register unit that vertically transfers the read signal charges, and the vertical C
A horizontal register unit connected to the signal charge reading end of the CD register unit to transfer the signal charges read from the vertical CCD register unit in the horizontal direction, and a color filter of a plurality of colors provided on the signal charge storage unit. A row color filter that is regularly arranged in the column direction, and a color filter plate that is arranged in the row direction so that each color filter of adjacent row color filters is displaced by 1.5 pixels in the column direction. The reading direction of the signal charge stored in the signal charge storage section under the row color filters of the even rows and the reading of the signal charge stored in the signal charge storage section under the row color filters of the odd rows. The directions are opposite to each other, and the transfer path for transferring the read signal charges to the horizontal register section is formed in a linear shape.

Another solid-state image pickup device according to the present invention (claim 7) is the solid-state image pickup device according to the above-mentioned invention (claims 1 to 6), wherein the horizontal CCD section is under the even-numbered row color filters. A first horizontal CCD unit that horizontally transfers the signal charges stored in the signal charge storage unit, and horizontally transfers the signal charges stored in the signal charge storage units under the row color filters of the odd rows. It is characterized by comprising a second horizontal CCD section.

Further, in another solid-state image pickup device according to the present invention (claim 8), in the above-mentioned invention (claims 1 to 6), the number of horizontal CCD units is the same as the number of colors of the color filters. It is characterized in that it comprises a CCD section, and each horizontal CCD section transfers the signal charges accumulated in the signal charge accumulating section under the color filters of different colors in the horizontal direction.

[0020]

According to the present invention, since the respective color filters of the adjacent row color filters are displaced by 1.5 pixels in the column direction, the phase between the adjacent row color filters is shifted by 180 degrees. For this reason,
Moire is canceled between adjacent row color filters, and moire caused by the color filter plate is reduced.

[0021]

Embodiments will be described below with reference to the drawings. (First Embodiment) FIG. 1 is a schematic diagram showing the structure of an interline transfer type solid-state imaging device according to the first embodiment of the present invention, and FIG. 2 shows the pixel section of the solid-state imaging device of FIG. It is a top view which shows a structure.

As shown in FIG. 1, this solid-state image pickup device is
The light receiving and accumulating portion 11 is roughly divided and arranged in a matrix and accumulates signal charges obtained by photoelectrically converting input light.
And a vertical CCD register unit 1 which is adjacent to the light receiving and accumulating unit 11 and includes a signal charge transfer unit (signal charge transfer path) 13 for vertically transferring signal charges, and a read end of the vertical CCD register unit 1. Then, a horizontal CC that is divided by the number corresponding to this read end and that transfers the signal charges in the horizontal direction.
A signal charge detection unit 3 which is connected to the D register unit 2 and a read end of the horizontal CCD register unit 2 and detects a signal charge
And a color filter (not shown) installed on the light receiving and accumulating unit 11. In the figure, reference numeral 4 indicates a signal charge reading direction.

Further, as shown in FIG.
Between the signal charge transfer unit 13 and the signal charge transfer unit 13.
2 is provided, and each of the light receiving and accumulating portions 11 includes an element isolation layer 1
Separated by four.

FIG. 3 is a plan view of a color filter plate used in the solid-state image pickup device of this embodiment. This color filter plate is composed of three types of G (green) color filters 5 _G , R (red) color filters 5 _R , and B (blue) color filters 5 _B , and a light receiving and accumulating section is located under the conventional color filter plates. ing.

The feature of the color filter plate of this embodiment is that the G color filters 5 _G , the R color filters 5 _R , and the B color filters 5 _B are regularly arranged in the column direction. A plurality of color filters of each color filter are arranged in the row direction so as to be shifted by 1.5 pixels in the column direction. In other words, the color filter of each color has 1.
There is a shift of 5 pixels.

If a color filter plate in which the color filters of the same color are deviated by 1.5 pixels between the even-numbered row and the odd-numbered row is used, the phase shift is 180 degrees between the even-numbered row and the odd-numbered row. Therefore, the moiré is canceled out between the adjacent row color filters, and the moiré caused between the color filters is reduced.

Further, in the prior art, the same color filter is used for the even rows and the odd colors connected thereto in the same column, whereas in the present invention, R, G, B is shifted by 1.5 pixels.
Since the color signal and the luminance signal have twice the number of pixels, the horizontal resolution is high. (Second Embodiment) Next, a solid-state image pickup device according to a second embodiment of the present invention will be described. The solid-state imaging device of this embodiment is an improvement of that of the previous embodiment.

That is, in the solid-state image pickup device of the first embodiment, the light receiving and accumulating units 11 in even rows and the light receiving and accumulating units 11 in odd rows are arranged.
2 share the same signal charge transfer unit 13,
As shown in, the signal charge transfer unit 13 is formed with a large bend. For this reason, the signal charge transfer unit 13 is partially narrowed, so that the transfer efficiency is deteriorated and the saturation signal amount is decreased.

FIG. 4 is a schematic diagram showing the structure of a solid-state image pickup device in consideration of such a problem, and FIG. 5 is a plan view showing the structure of a pixel portion of the solid-state image pickup device of FIG. Note that FIG.
The parts corresponding to those of the solid-state imaging device in FIG. 2 are denoted by the same reference numerals as those in FIGS. 1 and 2, and detailed description thereof will be omitted. Further, also in the following other drawings than FIG. 4 and FIG. 5, corresponding parts have the same reference numerals as those in the above-mentioned drawings (including those having different subscripts).
, And detailed description is omitted.

The solid-state image pickup device of this embodiment is different from that of the previous embodiment in that it has a signal charge transfer unit 13a of even-numbered rows of light-receiving and accumulating sections 11a and an odd-numbered row of light-receiving and accumulating sections 11b of signal-charge transferring sections 13b. Are separate.

In this way, the signal charge transfer units are provided as the signal charge transfer units 13a for even rows and the signal charge transfer units 13b for odd rows.
If divided into, as shown in FIG.
The bending of a and 13b becomes gentle. For this reason, the signal charge transfer sections 13a and 13b are not extremely narrowed in part, so that there is no problem that transfer efficiency is deteriorated as in the case of the previous embodiment. (Third Embodiment) Next, a solid-state image pickup device according to a third embodiment of the present invention will be described. The solid-state imaging device of this embodiment is an improvement of that of the second embodiment.

That is, in the solid-state image pickup device of the second embodiment, although the transfer efficiency could be improved, one pixel is provided with two signal charge transfer sections, whereby one signal charge transfer is performed. The saturation signal amount is not improved because the width of the part is narrowed.

Furthermore, since the number of read ends is doubled and the number of columns in the horizontal register section is also doubled, the horizontal read frequency is increased and the waveform phase of the clock pulse is deteriorated. As a result, a difference occurs in the output signal between the even and odd columns of pixels, causing flicker.

FIG. 6 is a schematic diagram showing the structure of a solid-state image pickup device according to the third embodiment of the present invention in consideration of such a problem, and FIG. 7 is a structure of a pixel portion of the solid-state image pickup device of FIG. 8A and FIG. 8B are cross-sectional views of the solid-state imaging device of FIG. 7 taken along arrow XX ′ and arrow YY ′, respectively.

In FIG. 8, reference numeral 10 denotes a semiconductor substrate. On the surface of the semiconductor substrate 10, an n-type impurity layer 11 which is a light receiving and accumulating portion, an n-type impurity layer 13 which is a signal charge transferring portion, A p-type impurity layer 14 which is an element isolation layer is formed.

Above the semiconductor substrate 10, the signal charge read electrode 15, the signal charge transfer electrode 16, and the light shielding layer 18 are provided.
Are provided, which are separated from each other by an insulating layer 17, and a color filter plate 19 and a microlens 20 are provided above the insulating layer 17.

As shown in FIG. 7, the solid-state image pickup device according to the present embodiment is characterized in that the signal charge reading units 12a in even rows and the signal charge reading unit 12b having the same color signal as the signal charge reading units 12a are signaled. By arranging the charge transfer unit 13 on the opposite bank, the signal reading direction 4a of the even-numbered rows and the signal reading direction 4b of the odd-numbered rows are made opposite to each other.

As a result, even if the pixels in the even-numbered columns and the odd-numbered columns are shifted by 1.5 pixels, the signal charges of the same color in the even-numbered columns and the odd-numbered columns can be read out by the same signal charge transfer section. Moreover, as in the first and second embodiments, the signal charge transfer portion 13 does not become narrow in part, so that the saturation current does not decrease.

Further, since the signal charge transfer section 13 can be formed in a substantially linear shape, it is possible to effectively prevent the transfer efficiency from being lowered. Furthermore, unlike the second embodiment, since it is not necessary to increase the number of columns of the horizontal register section, it is possible to suppress an increase in flicker. (Fourth Embodiment) FIG. 9 is a plan view of a pixel portion of a solid-state image pickup device according to the fourth embodiment of the present invention. 25 is a cross-sectional view of the solid-state imaging device of FIG. 9 taken along line XX ′. This embodiment corresponds to a modification of the first embodiment, and is an example in which the present invention is applied to a laminated solid-state image pickup device.

In the figure, reference numeral 30 denotes a semiconductor substrate, and the surface of the semiconductor substrate 30 has a signal charge accumulating portion n.
A type impurity layer 31, an n type impurity layer 33 that is a signal charge transfer portion, and a p type impurity layer 34 that is an element isolation layer are formed.

A signal charge read electrode 35, a signal charge transfer electrode 36, and a lead electrode 38 are provided above the semiconductor substrate 30, and these are separated from each other by an insulating layer 37.

On the insulating layer 37, the pixel electrode 39, the photoelectric conversion film 40 made of a photoconductive material such as hydrogenated amorphous silicon, and the transparent electrode 41 (for example, for applying a voltage to the photoelectric conversion film 40). ITO electrode) and the light-shielding layer 4
2, a color filter plate 43 including an R color filter, a G color filter, and a B color filter, and a microlens 44 are sequentially provided. (Fifth Embodiment) FIG. 10 is a schematic diagram showing the structure of an interline solid-state imaging device according to the fifth embodiment of the present invention, and FIG. 11 is a structure of a pixel portion of the solid-state imaging device of FIG. FIG.

This embodiment corresponds to a modification of the second embodiment, and is an example in which the present invention is applied to a laminated type solid-state image pickup device. That is, in the stacked type solid-state imaging device, the signal charge transfer section (signal charge transfer path) is divided into the signal charge transfer section 33a for even rows and the signal charge transfer section 33b for odd rows,
This is an example in which three signal charge transfer sections (three signal charge transfer paths) are provided in a triangular pixel composed of three signal charge storage sections.

As shown in FIG. 10, this solid-state image pickup device is roughly divided into color filters 5 _R1 , 5 _G1 , 5 _B1 , 5 _R2 , 5 _G2 , which are arranged in a matrix and color-separate light.
5 _B2 , 5 _R3 , 5 _G3 , 5 _B3 , ... (= 5), a signal charge storage section (not shown) for storing the signal charges photoelectrically converted and separated by these color filters 5, and this signal charge storage A vertical CCD register unit 1 including signal charge transfer units 33a and 33b that are adjacent to the unit and vertically transfer signal charges;
A horizontal CCD register unit 2 which is connected to the reading end of the vertical CCD register unit 1 and transfers the signal charges in the horizontal direction;
The horizontal CCD register unit 2 is connected to the reading end and includes a signal charge detection unit 3 for detecting signal charges.

The horizontal CCD register unit 2 includes a color filter 5
_From horizontal CCD register 2 _R for _R1 , 5 _R2 , ..., Horizontal CCD register 2 _G for color filters 5 _G1 , 5 _G2 , ... and Horizontal CCD register 2 _B for color filters 5 _B1 , _B2 ,. It is configured.

Further, in FIG. 11, a signal charge accumulating portion 31 composed of a diode for accumulating signal charges obtained by photoelectrically converting input light by a photoelectric conversion film (not shown), and the signal charge accumulating portion 31 The signal charge read-out unit 32 which reads out the accumulated signal charges and includes a signal charge read electrode 35
And the signal charges read from the signal charge reading unit 32 are transferred to the horizontal CCD register unit, and signals are transferred via the signal charge transfer units 33a and 33b composed of the signal charge transfer electrodes 36 and the extraction electrodes (not shown). The pixel electrode 39 connected to the diode of the charge storage unit 31 and each signal charge storage unit 31
And an element isolation layer 34 for separating the elements from each other. In the figure, 34 indicates the signal charge reading direction.

The reading method by the field storage method (for example, when reading an even field, the signals of an odd row adjacent to an even row are added and read) in the solid-state image pickup device thus configured is as follows. .

First, the signal charges in the odd fields are read out. In this case, the signal charges in the first and second rows (the signal charges in the first row + the signal charges in the second row), the third and fourth rows. , (The signal charge of the third row + the signal charge of the fourth row), ...

Regarding the signal charges in the first and second rows, the signal charge storage section below the color filter 5 _R1 , the signal charge storage section below the color filter 5 _{G1 and} the signal charge storage section below the color filter 5 _B2. , A signal charge storage section below the color filter 5 _B1, a signal charge storage section below the color filter 5 _{R2, and} a signal charge storage section below the color filter 5 _G2 , ... Sampled. Similarly, 3
With respect to the signal charges and the like of the rows 4 and 4, the signal charges are sampled in each pixel including the three signal charge storage units under the three color filters.

Next, the signal charges of the even field are read out. In this case, the signal charges of the second and third rows (the signal charges of the second row + the signal charges of the third row), the fourth and fifth rows. Signal charge of (the signal charge of the fourth row + the signal charge of the fifth row),
... is read.

Regarding the signal charges in the second and third rows, the signal charge storage section below the color filter 5 _B2 , the signal charge storage section below the color filter 5 _R3 , and the signal charge storage section below the color filter 5 _G3. , A pixel including a signal charge storage section below the color filter 5 _R2, a signal charge storage section below the color filter 5 _{B3, and} a signal charge storage section below the color filter 5 _G2. Sampled. Similarly, 4
With respect to the signal charges of the 5th and 5th rows, the signal charges are sampled in each pixel composed of three signal charge accumulating portions under the three color filters.

In this embodiment, since three signal charge transfer paths (signal charge transfer sections 33a and 33b) are provided for one pixel, even if the signal charges are read by the field storage method, the frame storage method is used. The same high vertical resolution as in the above case can be obtained. Also, in this embodiment, since the color filters shifted by 1.5 pixels are used, the horizontal resolution higher than the conventional one can be obtained as in the other embodiments. Further, since the color filters 5 of the same color are displaced by 1.5 pixels between the even-numbered rows and the odd-numbered rows, the phase is shifted by 180 degrees between the even-numbered rows and the odd-numbered rows. And moire are offset, so moire is greatly reduced.

Further, according to the present embodiment, for example, when reading the signal charges of the first row + the signal charges of the second row, the terminal voltages V1, V2 and V3 can be set to the high level and the terminal voltage V4 can be set to the low level. For example, since the charges can be accumulated in a total of three electrodes, that is, the two signal charge reading electrodes 35 and the one signal charge transfer electrode 36, the saturation signal amount can be increased. (Sixth Embodiment) FIG. 12 is a plan view of a pixel portion of a solid-state image pickup device according to a sixth embodiment of the present invention, FIGS.
12B is a view of the solid-state imaging device of FIG.
FIG. 14 is a cross-sectional view taken along the line X ′ and the view YY ′. The schematic diagram showing the configuration of the entire apparatus is the same as that in FIG.

This embodiment corresponds to a modification of the third embodiment and is an example in which the present invention is applied to a laminated type solid-state image pickup device. That is, in the stacked solid-state imaging device, as shown in FIG.
As shown in, the signal reading direction 4a of the even rows and the signal reading direction 4b of the odd rows are made opposite to each other.

In FIG. 13, reference numeral 30 denotes a semiconductor substrate. On the surface of the semiconductor substrate 30, an n-type impurity layer 31 which is a signal charge storage part and an n type signal transfer part are provided.
-Type impurity layer 33 and p-type impurity layer 34 that is an element isolation layer
And are formed.

A signal charge read electrode 35, a signal charge transfer electrode 36, and a lead electrode 38 are provided above the semiconductor substrate 30, and these are separated from each other by an insulating layer 37.

On the insulating layer 37, the pixel electrode 39, the photoelectric conversion film 40 made of a photoconductive material such as hydrogenated amorphous silicon, and the transparent electrode 41 (for example, for applying a voltage to the photoelectric conversion film 40). ITO electrode) and the light-shielding layer 4
2, a color filter plate 43 including an R color filter, a G color filter, and a B color filter, and a microlens 44 are sequentially provided.

Even in the solid-state image pickup device configured as described above,
The same effect as that of the third embodiment can be obtained, and further, in the case of the present embodiment, since the signal charge transfer portion 33 can be formed in a completely linear shape, the signal charge transfer portion 33 can be formed more linearly than in the third embodiment. The saturation amount and transfer efficiency can be improved. (Seventh Embodiment) FIG. 14 is a schematic view showing the arrangement of a solid-state imaging device according to the seventh embodiment of the present invention.

A feature of the solid-state image pickup device of the present embodiment is that a horizontal register section is provided for each color signal of R color signal, G color signal, and B color signal. That is, the R color signal is transferred to the horizontal register unit 2 ₁ , read by the signal charge detection unit 3 ₁ , and the G color signal is transferred to the horizontal register unit 2 ₂ .
The B-color signal is read by the signal charge detection unit 3 ₂ , transferred to the horizontal register unit 2 ₃ , and read by the signal charge detection unit 3 ₃ .

According to the solid-state image pickup device configured as described above, a color separation circuit for separating each color signal becomes unnecessary,
In addition, color separation can be surely performed. The pixel structure may be any of the above-described first to sixth embodiments. (Eighth Embodiment) FIG. 15 is a schematic view showing the arrangement of the essential parts of a solid-state imaging device according to the eighth embodiment of the present invention.

The solid-state image pickup device of this embodiment is an improvement of the solid-state image pickup device of the fifth embodiment. That is, the solid-state imaging device of this embodiment is an example in which the signal charges can be transferred by the two horizontal CCD register units 2a and 2b.

The horizontal CCD register unit 2a includes a horizontal CCD register _2Ra for the R color signal and a horizontal CCD for the G color signal.
Register 2 _Ga and horizontal CCD register 2 _Ba for B color signal
It consists of and. Similarly, the horizontal CCD register unit 2
b is a horizontal CCD register 2 _Rb for the R color signal, a horizontal CCD register 2 _Gb for the G color signal, and a horizontal C register for the B color signal.
It is composed of a CD register 2 _Bb .

The R color signal, the G color signal and the B color signal of even rows are detected by the signal charge detecting section 3 by the horizontal CCD register section 2a.
a is transferred to a. On the other hand, the R color signal, the G color signal and the B color signal in the odd rows are transferred to the signal charge detection unit 3b by the horizontal CCD register unit 2b.

According to the present embodiment, since the color signals of the even rows and the color signals of the odd rows are transferred by different horizontal CCD register sections, horizontal driving is possible compared to the case where there is one horizontal CCD register section. The frequency can be lowered. (Ninth Embodiment) FIG. 16 is a schematic view showing the arrangement of the essential parts of a solid-state imaging device according to the ninth embodiment of the present invention.

The solid-state image pickup device of the present embodiment is different from that of the eighth embodiment in that the signal charges are supplied to three horizontal CCD register sections 2.
_It is to transfer by _R , 2 _G , and 2 _B. Even row and R color signals of the odd rows are transferred to the signal charge detection section 3 _R by the horizontal CCD register portion 2 _R, even rows and odd rows of the G color signal the signal charge detection unit 3 _G by the horizontal CCD register portion 2 _G And the B color signals of the even and odd rows are transferred to the signal charge detecting section 3 _B by the horizontal CCD register section 2 _B.

According to the present embodiment, since the signal charges are transferred by the three horizontal CCD register sections 2 _R , 2 _G and 2 _B , the horizontal driving frequency can be further lowered. Furthermore, according to this embodiment, the R color signal, the G color signal, and the B color signal are transferred to the horizontal CCD register unit 2 _R , the horizontal CCD register unit 2 _G , and the horizontal CCD register unit 2 _B , respectively. A special color separation circuit for separating the signal charges into three colors becomes unnecessary.

In the above embodiment, the case where the number of horizontal CCD register units is two and three has been described.
It can be four or more. Further, the combination of color signals transferred to each horizontal CCD register unit is not limited to the above. (Tenth Embodiment) FIG. 17 is a schematic diagram showing the structure of an interline transfer type solid-state imaging device according to the tenth embodiment of the present invention. FIG. 18 shows the pixel section of the solid-state imaging device of FIG. It is a top view which shows a structure.

The solid-state image pickup device of the present embodiment is different from that of the fifth embodiment mainly in that between the 2i-1th row (i is a natural number) and the 2ith row, the 2i-1th row is provided. The signal charge of the signal charge storage / accumulation unit 31b is the same as the signal charge of the signal charge storage / accumulation unit 31a in the 2i-th row, which is shifted by 0.5 pixel from the signal charge of the signal charge accumulation / storage unit 31b. Is to be transferred by.

In order to allow the signal charges to be transferred by the same signal charge transfer section 33 in this way, in the present embodiment, the reading direction 4a of the signal charges in the even rows and the reading direction 4b of the signal charges in the odd rows are set. It is in the opposite direction. As a result, the signal charge transfer section (signal charge transfer path) 33 has a linear shape, and a sufficient saturation signal amount can be obtained even if the pixel is miniaturized.

The horizontal CCD register unit 2 further includes an R / B horizontal CCD register 2 _RB for transferring the R color signal and the B color signal and a G / R horizontal CCD register 2 _GR for transferring the G color signal and the R color signal. And a _GB horizontal CCD register 2 _GB for transferring the G color signal and the B color signal.

The reading method by the frame accumulating method (for example, when reading an even field, reading only an even row) in the solid-state image pickup device configured as described above is as follows.

First, in the odd field, the accumulated charges (R color signal, G) of the first row, the third row, ... (Odd row).
The color signal and the B color signal) are read out. Next, in the even field, the accumulated charges (R color signal, G color signal, B color signal) of the second row, the fourth row, ... (Even row) are read.

In this way, the accumulated charges of all the pixels are read out. Therefore, a high vertical resolution is obtained.
Also, in this embodiment, since the color filters shifted by 1.5 pixels are used, the horizontal resolution becomes higher than that of the conventional one as in the other embodiments.

Furthermore, according to the present embodiment, as described above, the shape of the signal charge transfer section (signal charge transfer path) 33 is linear, so that a sufficient saturation signal amount can be obtained even if the pixel is miniaturized. Will be available.

Although one horizontal CCD register section is used in this embodiment, a plurality of horizontal CCD register sections as described above may be used instead. (Eleventh Embodiment) FIG. 19 is a schematic diagram showing the structure of an interline transfer type solid-state imaging device according to the eleventh embodiment of the present invention. FIG. 20 shows the pixel section of the solid-state imaging device of FIG. It is a top view which shows a structure.

The feature of this embodiment is that two signal charge transfer portions 33 (two signal charge transfer paths) are provided in one row and three pixels, and
There are three signal charge transfer electrodes 36 ₁ , 36 ₂ , 3 for two pixels in a row.
By providing 6 ₃ for different color signals and a triangular pixel composed of three signal storage units corresponding to these,
This is because one signal transmission path is arranged. By reducing the number of signal charge transfer sections (signal charge transfer paths) and increasing the number of signal charge transfer electrodes in this way, the saturation signal amount increases and the wiring resistance of the pixel electrode decreases. Therefore,
The miniaturization of pixels becomes easy. The horizontal CCD register unit 2 is composed of a plurality of horizontal registers 2 _RGB .

Next, the reading method by the frame accumulating method in the solid-state image pickup device configured as described above is as follows. Generally, in the frame accumulating method, the signal charges are transferred separately into two fields, an odd field and an even field, but in the present embodiment, the signal charges are transferred separately into three fields.

First, in the first field, the R color signal and the B color signal of the first row, the third row, ... (Odd row) are read and transferred to the horizontal CCD register section 2.
Secondly, in the field, the G color signals of the first and second rows, the third and fourth rows, ... Are read out,
It is transferred to the horizontal CCD register unit 2. Finally, the B color signal and the R color signal of the second line, the fourth line, ... (Even number line) are read. Even with this kind of field storage method,
Since the accumulated charges of all pixels are read out, high vertical resolution can be obtained.

In this embodiment, three signal charge transfer electrodes are present in each row, but one or two signal charge transfer electrodes may be present in each row. Further, in the present embodiment, the case of three-phase driving and three electrodes 36 ₁ , 36 ₂ , and 36 ₃ has been described, but one electrode may be a two-layer structure electrode, three-phase driving, and six electrodes.

Further, in this embodiment, one horizontal CCD
Although the register section is used, a plurality of horizontal CCD register sections as described above may be used instead. The present invention is not limited to the above embodiment. For example, in the above embodiment, the R color filter, the G color filter, and the B color filter
Although the three color filters of the color filters are used, the number of colors and color types of the color filters are not limited to this. In addition, various modifications can be made without departing from the scope of the present invention.

[0081]

As described in detail above, according to the present invention, since the color filters of adjacent row color filters are displaced by 1.5 pixels in the column direction, moire is canceled between adjacent row color filters. Moire caused by the color filter plate can be reduced.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a configuration of a solid-state imaging device according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a configuration of a pixel section of the solid-state imaging device of FIG.

3 is a plan view of a color filter of the solid-state imaging device of FIG.

FIG. 4 is a schematic diagram showing a configuration of a solid-state imaging device according to a second embodiment of the present invention.

5 is a plan view showing a configuration of a pixel portion of the solid-state imaging device of FIG.

FIG. 6 is a schematic diagram showing the configuration of a solid-state imaging device according to a third embodiment of the present invention.

FIG. 7 is a plan view showing a configuration of a pixel portion of the solid-state imaging device of FIG.

8 is a cross-sectional view of the solid-state imaging device of FIG.

FIG. 9 is a plan view of a pixel portion of a solid-state image pickup device according to a fourth embodiment of the present invention.

FIG. 10 is a schematic diagram showing the configuration of a solid-state imaging device according to a fifth embodiment of the present invention.

11 is a plan view showing a configuration of a pixel portion of the solid-state imaging device of FIG.

FIG. 12 is a plan view of a pixel portion of a solid-state imaging device according to a sixth embodiment.

13 is a cross-sectional view of the solid-state imaging device of FIG.

FIG. 14 is a schematic diagram showing the configuration of a solid-state imaging device according to a seventh embodiment of the present invention.

FIG. 15 is a schematic diagram showing a main configuration of a solid-state imaging device according to an eighth embodiment of the present invention.

FIG. 16 is a schematic diagram showing a configuration of a main part of a solid-state imaging device according to a ninth embodiment of the present invention.

FIG. 17 is a schematic diagram showing the configuration of a solid-state imaging device according to the tenth embodiment of the present invention.

FIG. 18 is a plan view showing a configuration of a pixel portion of the solid-state imaging device of FIG.

FIG. 19 is a schematic diagram showing a configuration of a solid-state imaging device according to an eleventh embodiment of the present invention.

20 is a plan view showing the configuration of a pixel portion of the solid-state imaging device of FIG.

FIG. 21 is a plan view of a conventional solid-state imaging device.

22 is a cross-sectional view of a pixel portion of the solid-state imaging device of FIG.

FIG. 23 is a sectional view of a pixel portion of another conventional solid-state imaging device.

FIG. 24 is a plan view of a color filter of a conventional solid-state imaging device.

25 is a cross-sectional view taken along the line XX ′ of the solid-state imaging device in FIG.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Vertical CCD register part 20 ... Micro lens 2 ... Horizontal CCD register part 31 ... Signal charge storage part 3 ... Signal charge detection part 32 ... Signal charge read-out part 4 ... Signal charge read-out direction 33 ... Signal charge transfer part _5G , 5 _R , 5 _B ... Color filter 34 ... Element separation layer 10 ... Semiconductor substrate 35 ... Signal charge readout electrode 11 ... Photoreceptor storage section 36 ... Signal charge transfer electrode 12 ... Signal charge readout section 37 ... Insulating layer 13 ... Signal charge transfer section 38 Drawer electrode 14 Element separation layer 39 Pixel electrode 15 Signal charge reading electrode 40 Photoelectric conversion film 16 Signal charge transfer electrode 41 Transparent electrode 17 Insulating layer 42 Light shielding layer 18 Light shielding layer 43 Color filter plate 19 ... Color filter plate 44 ... Micro lens

Claims (8)

[Claims] 1. A plurality of light receiving and accumulating portions formed on a semiconductor substrate for accumulating signal charges obtained by photoelectrically converting input light, and signal charges which are adjacent to the light receiving and accumulating portions and read out the accumulated signal charges. A reading unit and a vertical C for vertically transferring the read signal charges.
A CD register unit, a horizontal register unit connected to the signal charge reading end of the vertical CCD register unit, and horizontally transferring the signal charges read from the vertical CCD register unit, and a horizontal register unit provided on the light receiving and accumulating unit. , Row color filters in which color filters of a plurality of colors are regularly arranged in the column direction are arranged in the row direction so that each color filter of adjacent row color filters is displaced by 1.5 pixels in the column direction. A solid-state imaging device comprising a color filter plate. 2. A plurality of signal charge accumulating portions formed on a semiconductor substrate for accumulating signal charges obtained by photoelectrically converting input light, and signal charge reading for reading out signal charges accumulated in the signal charge accumulating portions. And a vertical C for vertically transferring the read signal charges.
A CD register unit, a horizontal register unit connected to a signal charge reading end of the vertical CCD register unit, and horizontally transferring the signal charges read from the vertical CCD register unit, and provided on the signal charge storage unit. A plurality of row color filters in which color filters of a plurality of colors are regularly arranged in the column direction are arranged in the row direction so that each color filter of adjacent row color filters is displaced by 1.5 pixels in the column direction. And a reading direction of the signal charge accumulated in the signal charge accumulation section under the even-numbered row color filters, and the signal charge accumulation section under the odd-numbered row color filters. A solid-state image pickup device, wherein the readout directions of the signal charges accumulated in are opposite to each other. 3. A pixel electrode electrically connected to the signal charge accumulating portion, and a pixel electrode electrically connected to the signal charge accumulating portion between the color filter plate and the signal charge accumulating portion. The solid-state imaging device according to claim 2, further comprising a photoelectric conversion film that photoelectrically converts the input light. 4. A plurality of signal charge storage units formed on a semiconductor substrate for storing signal charges obtained by photoelectrically converting input light, and a plurality of signal charge storage units provided on the semiconductor substrate and electrically connected to the signal charge storage unit. Electrically connected pixel electrode, a photoelectric conversion film provided on the pixel electrode, a transparent electrode provided on the photoconductive film, and a signal charge for reading the signal charge stored in the signal charge storage section. A read unit and a vertical C for vertically transferring the read signal charges
A CD register unit, a horizontal register unit connected to a signal charge reading end of the vertical CCD register unit, and horizontally transferring the signal charges read from the vertical CCD register unit, and a horizontal register unit provided on the transparent electrode, A row color filter in which color filters of a plurality of colors are regularly arranged in the column direction is arranged in the row direction so that each color filter of adjacent row color filters is displaced by 1.5 pixels in the column direction. A solid-state imaging device comprising a filter plate. 5. The color filter plate is composed of color filters of three colors, the signal charge storage section under the row color filters in even rows and the row color filters under the row color filters in the odd rows adjacent to the even row color filters. A triangular pixel including a signal charge storage unit and a total of three signal charge storage units is provided with three transfer paths for transferring three different color signals. 5. The solid-state imaging device according to item 4 above. 6. A plurality of signal charge accumulating portions formed on a semiconductor substrate for accumulating signal charges obtained by photoelectrically converting input light, and signal charge reading for reading out signal charges accumulated in the signal charge accumulating portions. And a vertical C for vertically transferring the read signal charges.
A CD register unit, a horizontal register unit connected to a signal charge reading end of the vertical CCD register unit, and horizontally transferring the signal charges read from the vertical CCD register unit, and provided on the signal charge storage unit. A plurality of row color filters in which color filters of a plurality of colors are regularly arranged in the column direction are arranged in the row direction so that each color filter of adjacent row color filters is displaced by 1.5 pixels in the column direction. And a reading direction of the signal charge accumulated in the signal charge accumulation section under the even-numbered row color filters, and the signal charge accumulation section under the odd-numbered row color filters. The reading directions of the signal charges stored in the memory cells are opposite to each other, and the transfer path for transferring the read signal charges to the horizontal register section is formed in a straight line. Body imaging apparatus. 7. The horizontal CCD section includes a first horizontal CCD section for horizontally transferring the signal charges accumulated in the signal charge accumulation section under the even-numbered row color filters, and the odd-numbered row rows. 7. The solid-state imaging device according to claim 1, further comprising a second horizontal CCD unit that horizontally transfers the signal charges accumulated in the signal charge accumulation unit under the color filter. apparatus. 8. The horizontal CCD section is composed of the same number of horizontal CCD sections as the number of colors of the color filters, and each horizontal CCD section is
7. The solid-state imaging device according to claim 1, wherein the signal charges accumulated in the signal charge accumulating portions under different color filters are transferred in the horizontal direction.