JPH07234428A - Short wavelength light source module and wavelength convertor element - Google Patents

Abstract

PURPOSE:To obtain a short wavelength light source module having a waveguide converting element having a functional element for temp. and to decrease heat conduction between the elements and the module base so that wavelength conversion is stably performed and short wavelength light is obtd. by using a temp. controlling functional element of low capacity. CONSTITUTION:A LiTaO3 substrate l is used as a ferroelectric material, on which a periodical polarization-inversion area 2 and an optical waveguide 3 are formed. A SiO2 layer as a buffer layer 4 is formed to 0.4mum thickness on the surface of the substrate. A thin film heater 5 is used as an element having a function to control temp. The surface of the module base 6 is formed to have a rugged pattern to decrease the contact area between the Lilac, substrate 1 and the module base 6. Thus, heat conduction is decreased.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a short wavelength light source module and a wavelength conversion element using a near infrared semiconductor laser and a wavelength conversion device, which are used in the field of optical information processing or the field of measurement control of optical application. .

[0002]

2. Description of the Related Art Obtaining green and blue light sources by highly efficient wavelength conversion using a semiconductor laser as an excitation light source is required for high density recording on an optical disk, image processing and the like.
The output light obtained here is required to have a transverse mode of Gaussian and can be condensed to near the diffraction limit, and have an output of several mW and stable in frequency and time.

In order to obtain a high-power short-wavelength light source of several mW or more using a semiconductor laser as an excitation light source, a quasi-phase matching (hereinafter referred to as QPM) type polarization inversion waveguide (Yamamoto et al., Optics) is used as a wavelength conversion element.・ Letters Optics Lette
rs Vol.16, No.15, 1156 (1991)) or a structure in which a semiconductor laser with a single longitudinal mode spectrum is used as an excitation light source and a wavelength conversion element is inserted inside the resonator of a solid-state laser to obtain harmonics. The resonator type is influential.

A schematic diagram of a blue light source using a polarization inversion type waveguide device and a green light source using a semiconductor laser pumped internal cavity type solid state laser is shown in FIGS.
4 shows.

In FIG. 12, 7 is a 0.86 μm band 1
40mW class AlGaAs semiconductor laser, 19 is a collimating lens with NA = 0.5, 21 is a λ / 2 plate, 20 is a focusing lens with NA = 0.55, 22 is a collimating lens with NA = 0.5, and 23 is the optical axis of the semiconductor laser. It is a grating installed at an angle of θ. On the LiTaO ₃ substrate 1, an optical waveguide 3 and periodically poled regions 2 are formed. The laser light made parallel by the collimator lens 19 is rotated in the deflection direction by the λ / 2 plate 21, is focused on the end face of the optical waveguide 3 of the polarization inversion waveguide device by the focusing lens 20, and is polarized with a period of 4.0 μm. The light propagates through the optical waveguide 3 having the inversion region 2 and is emitted from the emission end face of the optical waveguide 3. The light emitted from the optical waveguide 3 is collimated by the collimator lens 22.
Then, the light becomes parallel light and is guided to the grating 23. The grating 23 has a wavelength dispersion effect and has a wavelength of 860n.
The light of m is re-coupled to the optical waveguide 3 and returned to the active layer of the semiconductor laser 7, and the wavelength of the optical semiconductor laser 7 is fixed to 860 nm which is the phase matching wavelength of the polarization inversion type waveguide. The angle of is set. A blue light of 8 mW is obtained for an incident light intensity of 72 mW entering the waveguide of the semiconductor laser 7.

However, since the QPM polarization inversion waveguide device has a small temperature tolerance of 3 ° C. in full width at half maximum, it is necessary to control the temperature of the device in order to obtain a stable blue output with respect to environmental temperature changes.

Similarly, in FIG. 14, 7 is 809n.
An m-band 90 mW class AlGaAs semiconductor laser, 19 is a collimating lens with NA = 0.5, 20 is a focusing lens with NA = 0.5, and 23 is a grating installed at an angle of θ with respect to the optical axis of the semiconductor laser 7. The light emitted from the end surface of the semiconductor laser 7 is collimated by the collimator lens 19 and guided to the grating 23. wavelength
The grating 23 is placed so that the first-order diffracted light of 809 nm returns to the active layer of the semiconductor laser 7. The reflected light (0th order diffracted light) from the grating 23 is focused on the laser crystal Nd: YVO ₄ 24 by the focusing lens 20. The fundamental wave (1064 nm) resonating at the end face of the output mirror 25 and Nd: YVO ₄ 24 is a nonlinear optical crystal KTP crystal (KTiOP).
The wavelength is converted by O ₄ ) 11 and emitted from the output mirror 25. While the excitation intensity of the semiconductor laser 7 to Nd: YVO ₄ 24 is 50 mW, wavelength conversion of the KTP crystal (KTiOPO ₄ ) 11 produces green light of about 6 mW. However, K
The TP crystal 11 also has temperature dependence, like the polarization inversion type waveguide device. With the temperature change of the KTP crystal 11, the oscillation polarization direction of the fundamental wave (1064 nm) changes, and the green light output changes. In order to obtain a stable green output, the temperature control of the KTP crystal 11 is indispensable like the polarization inversion element.

[0008]

In a short wavelength light source module having a ferroelectric material having a nonlinear optical effect such as a polarization inversion type waveguide device having a substrate of LiTaO ₃ or a KTP crystal, stable blue or green light is emitted. In order to obtain the above, it is necessary to control the temperature of the ferroelectric material (element). Until now, ferroelectric materials (elements) have been attached directly to the base of the module. It was sometimes attached via a paste with high thermal conductivity. Therefore, in the configuration where the temperature of the entire module is controlled by a Peltier element or an element having a temperature control function such as a heater, the element temperature can be the same as the module temperature, and the element temperature can also be constant. It was

However, in the structure in which the temperature of the entire module is controlled, the capacity of the temperature control function element is large, so that the power source capacity is also large, and when the Peltier element is used, the radiation fin is also large, and therefore the size of the entire module is also large. Increase.

Further, in the case of controlling the temperature of only the element with a thin film heater or a small Peltier element, if the thermal conductivity of the element and the module is high, it is not possible to control the temperature of only the element, and as a result, the thin film heater or the small size The capacity of the Peltier element increases.

Furthermore, when a high-power semiconductor laser is used as an excitation light source, the effect of heat generation of the semiconductor laser is easily transmitted to the element, and it becomes difficult to stably control the element at a constant temperature.

The present invention overcomes the problems of the short-wavelength light source module having the above-mentioned ferroelectric material and provides stable short-wavelength light.

[0013]

In order to solve the above problems, the present invention provides: (1) In a short wavelength light source module having a semiconductor laser and a ferroelectric material having a nonlinear optical effect, the ferroelectric material is fixed. By reducing or blocking the heat conduction between the base and the ferroelectric material, the temperature of the device can be easily controlled, and a stable short wavelength light source module is supplied.

The present invention also provides (2) a short-wavelength light source module having a semiconductor laser and a ferroelectric material having a non-linear optical effect, wherein the base on which the ferroelectric material is fixed and the ferroelectric material are on the entire plane. It is possible to reduce or block the heat conduction between the ferroelectric material and the base by not making contact with each other, but by making partial contact with points or lines, making it easy to control the temperature of the element. In this way, a stable short wavelength light source module can be provided.

The present invention further provides (3) a short-wavelength light source module having a semiconductor laser and a ferroelectric material having a non-linear optical effect, between a base on which the ferroelectric material is fixed and the ferroelectric material. By providing a layer (film) having a function of reducing or blocking heat conduction between the ferroelectric material and the base, the temperature of the element can be easily controlled, and a stable short wavelength light source module can be supplied. is there.

The present invention also provides (4) a short-wavelength light source module having a semiconductor laser and a ferroelectric material having a non-linear optical effect, in contact with a ferroelectric material on a base surface on which the ferroelectric material is fixed. A layer (film) that has the function of reducing or blocking the heat conduction between the ferroelectric material and the base and the heat conduction from the outside in the part where the light is incident and the light emitting end face of the ferroelectric material is present. By forming the, it is easy to control the temperature of the element,
It is intended to supply a stable short wavelength light source module.

Further, according to the present invention, (5) an optical waveguide is formed on a ferroelectric material substrate having a nonlinear optical effect, including an element having a temperature control mechanism such as a thin film heater or an electronic cooling element. In the waveguide type wavelength conversion element, the temperature control of the element is facilitated by providing a layer (film) having a function of reducing or blocking heat conduction from the outside on the buffer layer formed on the optical waveguide. It supplies a stable wavelength conversion element.

[0018]

According to the present invention, in a short wavelength light source module having a semiconductor laser and a ferroelectric material having a nonlinear optical effect, a layer for reducing or blocking heat conduction is provided between the ferroelectric material and the module base, By making the contact area small and providing a heat insulating layer for air, it is possible to control the temperature of only the element and reduce the capacity of the temperature control function element such as the Peltier element or heater, and a stable wavelength conversion element, that is, a stable short wavelength. It realizes a light source.

[0019]

[Embodiment] In this embodiment, a short wavelength light source module is used.
, A blue light source and a semiconductor using a polarization inversion waveguide device
Glee using a laser-pumped internal cavity solid-state laser
The light source will be described as an example. For polarization inversion waveguide device
Is LiTaO as a ferroelectric material₃Crystal is used and resonance
KTiOPO is used as a ferroelectric material for the wavelength conversion element inside the chamber. _Four
(KTP) crystals have been used.

Example 1 In a short wavelength light source having a semiconductor laser and a ferroelectric material having a nonlinear optical effect,
The short-wavelength light source module of the present invention in which the heat transfer between the ferroelectric material and the base is reduced by reducing the contact area between the ferroelectric material and the fixed base is described with reference to FIG. To do.

FIG. 1 is a schematic view of a blue light source module using a polarization inversion type waveguide device. A LiTaO ₃ substrate 1 is used as a ferroelectric material, and a periodically domain-inverted region 2 and an optical waveguide 3 are formed on the substrate. On the surface of the substrate, 0.4 μm of SiO ₂ is laminated as the buffer layer 4.
In FIG. 1, the thin film heater 5 is used as an element having a temperature control function. The thin film heater 5 was formed by depositing Ti on the substrate and etching it. Aluminum was used as the material of the module base 6 of the short wavelength light source module. Brass, stainless steel or Invar alloy may be used.

The surface of the module base of the conventional example is processed into a flat surface, but in this embodiment, an uneven portion is formed as shown in FIG. 1, and the contact portion between the LiTaO ₃ substrate 1 and the base 6 is made small. It reduces heat conduction. As a result, the module of this example could shift by 0.1 nm. Generally, the phase matching wavelength of the polarization inversion element also shifts due to the change of the refractive index of the element due to the temperature rise, and the amount of change is 0 in the LiTaO ₃ substrate 1.
It is 04 nm / ° C. Therefore, the temperature rise of the substrate is 1
Although there was only an increase of about ℃, in this example 2.5
This means that a rise of about ℃ has been achieved. As a result, the capacity of the thin film heater 5 used was reduced.

By further reducing the contact portion between the LiTaO ₃ substrate 1 and the module base 6 as compared with the present embodiment, the capacity of the thin film heater 5 can be made smaller.

Although the thin film heater 5 is used as an element having a temperature control function in FIG. 1, even in the case of using a Peltier element, the element controllable temperature of the same endothermic capacity can be obtained by reducing the contact portion. The range has expanded,
The same effect as the thin film heater 5 was obtained.

When the element is bonded to the module base 6, it is better to bond only the vicinity of the semiconductor laser light incident side end face of the element to the thermal expansion of the element so that the laser light is coupled into the optical waveguide 3. It is desirable because it does not change and is stable.

Further, by adding the thin film heater 5 on the optical waveguide 3 via the buffer layer 4 as shown in FIG. 2, the temperature of the optical waveguide 3 can be controlled more easily and the capacity of the thin film heater 5 can be reduced. You can do it. In this embodiment, an insulating layer (SiO ₂ is 1 μm) 9 is provided on the thin film heater 5 in order to prevent electrical conduction between the thin film heater 5 and the module base 6.

The same effect can be seen in a ferroelectric material such as KTP crystal 11 used as a bulk wavelength conversion element for a green light source using a semiconductor laser pumped internal cavity type solid state laser. A schematic diagram thereof is shown in FIG.

(Embodiment 2) Schematic configuration FIG. 4 shows a ferroelectric material in a blue light source using a polarization inversion type waveguide device.
It shows a structure in which the polarization inverting waveguide element made of LiTaO ₃ and the module base are in point contact. In this embodiment, they are in contact with each other at three points and are stably held by the module.
There is no problem with point contact of four or more points, but considering the stability of the element, the state of three point contact is preferable. Further, in this module, the projection 12 supporting the element has a conical shape,
Since the tip is sharp and may damage the element, it is preferable that the projection 12 be formed in a hemispherical shape and point-contact with a part of the spherical surface. Similar to FIG. 1, a periodically domain-inverted region and an optical waveguide 3 are formed on a LiTaO ₃ substrate 1, and SiO ₂ is laminated as a buffer layer 4 in a thickness of 0.4 μm on the substrate surface. A thin film heater 5 is used as an element having a temperature control function, and is attached to the surface on which the optical waveguide 3 is not formed. By adding the thin film heater 5 on the buffer layer 4 on the optical waveguide 3 as shown in FIG. 2, it is possible to further easily control the temperature of the optical waveguide 3 and reduce the capacity of the heater.

In the case of point contact, the heat conduction between the polarization inversion type waveguide element and the module base can be reduced to the utmost limit, and the conduction is only through the air layer other than the contact portion. However, the thermal conductivity of the air layer is 0.03 W / mK, which is four orders of magnitude smaller than that of metal, so that there is almost no heat transfer between the module base and the element when the gap d between the element and the element is large to some extent. . FIG. 5 shows the relationship between the gap length d between the element and the base in FIG. 4 and the shift amount of the phase matching wavelength of the polarization inversion waveguide element, and the capacity of the thin film heater is 0.2 W. When the gap d was 0, the shift amount of the phase matching wavelength was 0.04 nm with the element and the base directly contacting each other.
When the gap d is 0.5 mm or more, the shift amount of the phase matching wavelength is
Saturated to 0.4 nm. About 10 ℃ was achieved as the temperature rise of the device. It was possible to improve the temperature rise amount of the element by using the heater of the same capacity, and as a result, it was possible to reduce the capacity of the heater used.

In FIG. 4, the thin film heater 5 is used as an element having a temperature control function. However, even when a Peltier element is used, by reducing the contact portion, the element controllable temperature of the same endothermic capacity can be obtained. The range has expanded,
The same effect as the heater was obtained.

Schematic Configuration FIG. 6 shows a structure in which a polarization inversion type waveguide element made of a ferroelectric material LiTaO ₃ and a module base are in line contact in a blue light source using a polarization inversion type waveguide element. There is. In this embodiment, the two wires are in contact with each other and are stably held by the module. However, a configuration in which the point contact of the schematic configuration diagram 4 and the line contact of the schematic configuration diagram 6 are combined may be used. Desirably, contact between one point and one line is preferable in consideration of thermal conductivity and stability. In addition, it is preferable that a part of the cylinder is in line contact with the polarization inversion type waveguide element without fear of being damaged.

In a ferroelectric material such as a KTP crystal used as a bulk wavelength conversion element for a green light source using a semiconductor laser pumped internal cavity type solid state laser, the KTP crystal is used with respect to the module base. The same effect can be seen by contacting and fixing with points and lines.
The capacity of the heater and Peltier element for controlling the temperature of the KTP crystal could be reduced.

(Embodiment 3) Schematic configuration In FIG. 4, the air layer between the polarization inversion type waveguide device and the module base becomes a heat insulating layer, and the heat transfer between the device and the base is almost eliminated. I explained in 3. However, if the gap d between the element and the base becomes too large, the natural convection of the air layer gradually increases and the heat insulating effect decreases. for that reason,
It is preferably filled with a material that prevents gas convection, such as cotton.

Similar effects can be obtained even if the air layer is filled with a liquid having low heat conductivity.

Example 4 In a short wavelength light source having a semiconductor laser and a ferroelectric material having a nonlinear optical effect,
A short-wavelength light source module of the present invention, in which a layer having a low thermal conductivity of the ferroelectric material and the base is provided between the ferroelectric material and the fixed base, will be described with reference to the schematic configuration diagram 7. To do.

FIG. 7 shows a schematic view of a blue light source module using a polarization inversion type waveguide element and a semiconductor laser, in which a ferroelectric material LiTaO ₃ is used as a substrate of the polarization inversion type waveguide element. . A Teflon plate 13, which is an organic polymer material, was used as a material having low heat conduction provided between the element and the module base. The thickness of the Teflon plate 13 is 0.5 mm. A periodic polarization inversion region 2 and an optical waveguide 3 are formed on a LiTaO ₃ substrate 1, and SiO ₂ is laminated as a buffer layer 4 on the periodic polarization inversion region 2 and the optical waveguide 3. The Teflon plate 13, the module base 6 and the LiTaO ₃ substrate 1 are adhered with an ultraviolet curing agent. A thin film heater 5 is added to the surface of the LiTaO ₃ substrate 1 on which the optical waveguide 3 is not formed.
The shift amount of the phase matching wavelength was 0.2 nm with respect to the capacity of the thin film heater 5 being 0.2 W. When the temperature rise of the LiTaO ₃ substrate 1 was corrected, it was 5 ° C.

Schematic Structure As shown in FIG. 2, the thin film heater 5 is preferably formed on the buffer layer 4 so that the heater can be used more efficiently.

FIG. 13 shows the thermal conductivity of various organic polymer materials. Taking Teflon as an example, it is 0.3 W / m · K, which has a thermal conductivity of about three digits smaller than that of metal, and one digit less than that of dielectric SiO ₂ . In general, organic polymer materials have low thermal conductivity, and the capacity of the heater used can be reduced even if another organic polymer material is provided between the element and the base.

Schematic Structure In FIG. 7, the Teflon plate 13 is fixed with an adhesive, but the surface of the base of the module may be processed with a polymer resin. In the case of Teflon resin, Teflon resin was emulsified, applied to a base, and then baked at a high temperature of 200 ° C. In the case of polystyrene, toluene was first dissolved in a solvent, and a film of several 100 μm was formed by a casting method.

Further, if a glass plate is used instead of the Teflon plate 13 shown in FIG. 7, the heat conduction between the element and the base can be prevented. The thermal conductivity of quartz glass is 1.4 W / mK, which is one digit larger than that of organic polymer materials, but a 0.5 mm thick quartz glass is used as an ultraviolet curing agent through the element and the base. It was possible to raise the temperature of the device by 2.5 ℃ with a 0.2 W heater.

Further, if a ceramic plate made of ZrO ₂ (MgO), Al ₂ O ₃ or the like is used instead of the Teflon plate 13 shown in the schematic configuration diagram, heat conduction between the element and the base can be prevented. it can. The thermal conductivity of ceramics is 2.1 W / mK in ZrO ₂ (MgO), which is about the same as that of glass plates. By bonding a 0.5 mm thick ceramic plate between the element and the base with an ultraviolet curing agent, it was possible to raise the temperature of the element by 2.5 ° C. with a 0.2 W heater.

Further, the above ceramic material can be directly deposited by sputtering or the like.

(Fifth Embodiment) In the fourth embodiment, the polarization inversion type waveguide device using LiTaO ₃ as the substrate has been described.
Similar effects were obtained in a short wavelength light source module using a bulk type wavelength conversion element such as a P crystal.

In Examples 4 and 5, in a short wavelength light source module having a wavelength conversion element made of a semiconductor laser and a ferroelectric material, a layer having a low thermal conductivity is provided between the wavelength conversion element and the module base. The short wavelength light source module, which is provided and operates the heater and the Peltier element with high efficiency, has been described. In the sixth and subsequent embodiments, a wavelength conversion element having a function of reducing heat transfer from the outside to the wavelength conversion element will be described.

(Embodiment 6) FIG. 8 is a schematic view of a KTP crystal used as a wavelength conversion material of a semiconductor laser-excited internal cavity type green light source, in which a Peltier element 14 and heat from the outside are provided around the crystal. A layer having a function of preventing inflow and outflow is attached. Teflon 15 having a low thermal conductivity is used as a layer having a function of preventing heat inflow and outflow.

FIG. 9 is a schematic view in which a thin film heater 17 is attached to the KTP crystal 16 instead of the Peltier element 15, and the thin film heater 17 is attached to the KTP crystal 16.
Ti is vapor-deposited and added, and Teflon 15 is added thereon.

The elements shown in FIGS. 8 and 9 can prevent heat conduction between the element and the base when fixing the element to the base made of a metal such as aluminum. Therefore, only the element is heated by a heater or a Peltier element. It can be controlled and the capacity of the heater can be reduced.

(Embodiment 7) FIG. 10 shows a layer for reducing heat conduction to the outside through the buffer layer 4 of SiO ₂ on the optical waveguide 3 of the polarization inversion type wavelength conversion element using LiTaO ₃ as a substrate. It is a wavelength conversion element to which a Teflon 18 is added.
A thin film heater 5 is provided on the surface on which the optical waveguide 3 is not formed.
Is formed, and Teflon 18 is added as a layer thereon to reduce heat conduction to the outside.

FIG. 11 shows a SiO ₂ buffer layer 4 on an optical waveguide 3 of a polarization inversion type wavelength conversion element using LiTaO ₃ 1 as a substrate.
Is a wavelength conversion element to which Teflon 18 is added as a layer for reducing heat conduction between the thin-film heater 5 and the outside through. Teflon 18 is added as a layer for reducing heat conduction to the outside even on the surface where the optical waveguide 3 is not formed.

In the element as shown in FIGS. 10 and 11, when fixing the element to the base made of metal such as aluminum, heat conduction between the element and the base can be prevented, so that only the element is heated by a heater or a Peltier element. It can be controlled and the capacity of the heater can be reduced. As with the module of Example 4, the effect was that the temperature of the device could be increased by about 5 ° C. with a thin film heater of 0.2 W.

Further, even if a glass plate or a ceramic plate made of ZrO ₂ (MgO), Al ₂ O ₃ or the like is used instead of the Teflon plate 18 in the schematic configuration diagram 10, heat conduction between the element and the base is prevented. can do.

In this embodiment, the optical wavelength conversion element in which the optical waveguide and the domain inversion region are formed on the LiTaO ₃ substrate has been described, but other ferroelectric materials such as LiNbO ₃ and KTP are used as the substrate. The same effect can be obtained in the wavelength conversion element. The same effect can be obtained by using a self-doubling crystal such as NYAB instead of the bulk crystal of KTP.

By reducing the heat conduction between the ferroelectric material and the module base as in this embodiment, even if the temperature of the module base rises due to the heat generated by the semiconductor laser, Heat conduction can be prevented. Therefore, the effect is great in a module using a high-power semiconductor laser.

[0054]

When the temperature of the wavelength conversion element made of a ferroelectric material is controlled by a thin film heater or a Peltier element, if the wavelength conversion element and the module base have good thermal conductivity, the temperature of only the element is controlled. However, since the entire module is controlled, the capacity of the temperature control function element such as the heater becomes large. The present invention is
Since the heat conduction between the element and the base can be reduced or prevented, it is possible to control the temperature of only the element, and the temperature control function element with a small capacity can keep the temperature of the element constant, resulting in downsizing, low power consumption, and low power consumption. Since the cost can be reduced and a stable short wavelength light source can be supplied, its practical effect is great.

Further, in the present invention, since the heat conduction between the module base and the wavelength conversion element is reduced, even if the temperature of the module base rises due to the heat generated by the semiconductor laser, the heat conduction to the wavelength conversion element can be reduced. When a high-power semiconductor laser is used, its practical effect is great.

[Brief description of drawings]

FIG. 1 is a diagram showing a schematic view of a short wavelength light source module using a polarization inversion type waveguide device according to the present invention.

FIG. 2 is a diagram showing a schematic view of a short wavelength light source module using a polarization inversion type waveguide device according to the present invention.

FIG. 3 shows a KT of an internal resonator type short wavelength light source in the present invention.
The figure showing the cross section of a P crystal fixed part.

FIG. 4 is a diagram showing a schematic view of a short wavelength light source module using a polarization inversion type waveguide device according to the present invention.

FIG. 5 is a characteristic diagram showing the relationship between the gap length between the element and the base and the shift amount of the phase matching wavelength of the wavelength conversion element in the short wavelength light source module of the present invention.

FIG. 6 is a diagram showing a schematic view of a short wavelength light source module using a polarization inversion waveguide device according to the present invention.

FIG. 7 is a diagram showing a schematic view of a short wavelength light source module using a polarization inversion type waveguide device according to the present invention.

FIG. 8 is a schematic diagram of a wavelength conversion element according to the present invention.

FIG. 9 is a schematic view of a wavelength conversion element according to the present invention.

FIG. 10 is a schematic view of a wavelength conversion element according to the present invention.

FIG. 11 is a schematic view of a wavelength conversion element according to the present invention.

FIG. 12 is a schematic configuration diagram of a blue light source using a semiconductor laser and a polarization inversion waveguide device.

FIG. 13 is a diagram showing the thermal conductivity of various organic polymer materials.

FIG. 14 is a schematic configuration diagram of a green light source using a semiconductor laser pumped internal cavity type solid-state laser.

[Explanation of symbols]

1 LiTaO ₃ substrate 2 polarization inversion region 3 optical waveguide 4 buffer layer 5 thin film heater 6 module base 7 semiconductor laser 8 air 9 insulating layer 10 module base 11 KTP crystal 12 protrusion 13 Teflon plate 14 Peltier element 15 Teflon 16 KTP crystal 17 Thin film heater 18 Teflon 19 Collimating lens 20 Focusing lens 21 λ / 2 plate 22 Collimating lens 23 Grating 24 Nd: YVO ₄ 25 Output mirror 26 Paste

Claims (22)

[Claims] 1. At least a semiconductor laser and a ferroelectric material having a non-linear optical effect are added on a module base to reduce or block heat conduction between the module base and the ferroelectric material. A short wavelength light source module characterized by the above. 2. A short wavelength light source module having at least a semiconductor laser, a ferroelectric material having a nonlinear optical effect, and a module base, wherein an element having a temperature control function is added on the ferroelectric material, and the module base is provided. Heat conduction between the base and the ferroelectric material is reduced or blocked,
Furthermore, the temperature T ₁ of the module base and the temperature T ₂ of the ferroelectric material have a relation of T ₁ ≠ T ₂ , and a short wavelength light source module. 3. A module base on which at least a semiconductor laser and a ferroelectric material having a nonlinear optical effect are added, and the module base and the ferroelectric material are partially in contact with each other. Short wavelength light source module. 4. A short wavelength light source module having at least a semiconductor laser, a ferroelectric material having a nonlinear optical effect, and a module base, wherein an element having a temperature control function is added on the ferroelectric material, and the module base is provided. The base and the ferroelectric material are partially in contact with each other, and the temperature T ₁ of the module base and the temperature T ₂ of the ferroelectric material have a relationship of T ₁ ≠ T _2. Short wavelength light source module. 5. The short wavelength light source module according to claim 3, wherein the module base and the ferroelectric material are in contact with each other at a point or a line. 6. In a short wavelength light source module having at least a semiconductor laser and a ferroelectric material having a nonlinear optical effect, a base on which the ferroelectric material is fixed and the ferroelectric material are in contact with each other. 4. A liquid or an inert gas is filled in the non-existing portion.
Alternatively, the short wavelength light source module according to item 4. 7. A short wavelength light source module having at least a semiconductor laser and a ferroelectric material having a nonlinear optical effect, wherein a base on which the ferroelectric material is fixed and the ferroelectric material are in contact with each other. The short-wavelength light source module according to claim 3 or 4, wherein a non-existing portion is filled with a heat insulating material that prevents gas convection. 8. A short wavelength light source module having at least a semiconductor laser and a ferroelectric material having a non-linear optical effect, wherein the ferroelectric material is a wavelength conversion element having an optical waveguide. 4. The short wavelength light source module described in 4. 9. A short wavelength light source module comprising at least a semiconductor laser and a ferroelectric material having a non-linear optical effect, wherein the ferroelectric material is a wavelength conversion element having an optical waveguide and a periodically poled region. The short wavelength light source module according to claim 3 or 4. 10. A module base on which at least a semiconductor laser and a ferroelectric material having a nonlinear optical effect are added, and between the module base and the ferroelectric material,
A short-wavelength light source module, wherein a layer or film having a low thermal conductivity is formed. 11. A short wavelength light source module having at least a semiconductor laser, a ferroelectric material having a nonlinear optical effect, and a module base, wherein an element having a temperature control function is added on the ferroelectric material, and the module base is provided. A layer or film having a low thermal conductivity is formed between the base and the ferroelectric material, and the temperature of the module base T ₁ and the temperature of the ferroelectric material T ₂ are T ₁ ≠ T ₂ . A short-wavelength light source module characterized by a relationship. 12. The short wavelength according to claim 10, wherein the thermal conductivity of the layer or film formed between the module base and the ferroelectric material is 1.5 W / m · k or less. Light source module. 13. The layer or film having a low thermal conductivity formed between the module base and the ferroelectric material is made of a sintered body (ceramics).
The described short-wavelength light source module. 14. The short wavelength light source module according to claim 10, wherein the layer or film having a low thermal conductivity formed between the module base and the ferroelectric material is made of an organic compound. 15. The short wavelength light source module according to claim 10, wherein the layer or film having a low thermal conductivity formed between the module base and the ferroelectric material is made of a glass material. 16. A ferroelectric material having a non-linear optical effect, wherein an element having a temperature control function is added to the surface of the ferroelectric material, and the portion other than the light incident and emitting portions of the ferroelectric material is further added. A wavelength conversion element, wherein a layer or film having a low thermal conductivity is formed. 17. A wavelength conversion element having an optical waveguide formed on a ferroelectric material substrate having a non-linear optical effect, wherein an element having a temperature control function is added to the wavelength conversion element, and the optical waveguide is formed on the optical waveguide. A buffer layer is formed,
Further, the wavelength conversion element is characterized in that a layer or a film having low heat conduction is formed on a portion other than the light incident and emission portions of the wavelength conversion element. 18. A region in which spontaneous polarization is periodically inverted at the same time is periodically formed on a ferroelectric material substrate having a non-linear optical effect in which an optical waveguide is formed. Wavelength conversion element. 19. The thermal conductivity of a layer or a film formed in a wavelength conversion element made of a ferroelectric material having a nonlinear optical effect is 1.5 W / m · k or less.
Or the wavelength conversion element according to 17. 20. The layer or film having a low thermal conductivity, which is formed in the wavelength conversion element made of a ferroelectric material having a nonlinear optical effect, is made of a sintered body (ceramics). Or the wavelength conversion element according to 17. 21. The layer or film having a low thermal conductivity added to the wavelength conversion element made of a ferroelectric material having a nonlinear optical effect is made of an organic compound.
The wavelength conversion element according to 6 or 17. 22. The layer or film having a low thermal conductivity, which is added to the wavelength conversion element made of a ferroelectric material having a nonlinear optical effect, is made of a glass material. Wavelength conversion element.