JPH07225924A - Magnetoresistive element, magnetic induction element and thin film magnetic head - Google Patents

Abstract

(57) [Abstract] [Purpose] To realize a magnetoresistive element with increased sensitivity by increasing the rate of change in magnetoresistance by optimizing the electrical resistance of the coupling exchange film. The magnetoresistive element 20 includes a Cu film as an auxiliary film 31 on the front surface side of the substrate 1 and Cu, N on the MnFe base.
An exchange coupling film 32 to which i, Pd or Co is added, a Ni at 82% NiFe film as a magnetoresistive film 33, a non-magnetic film 34, and a lateral bias film composed of a shunt bias film or a soft magnetic bias film. 35 and 35 are sequentially laminated. The exchange coupling film 32 is made of Cu, Ni,
By adding Pd or Co, the electrical resistance value becomes M
Since it is larger than that of the nFe alloy film, it is difficult for the sensor current to be shunted to the exchange coupling film 32, and the resistance change amount apparently increases, and the magnetoresistance change rate relatively improves.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head, and more particularly to a reproducing magnetic resistance element and a recording magnetic induction element suitable for high density recording and reproduction.

[0002]

18 (a) is a schematic sectional view of a magnetoresistive thin-film magnetic head, FIG. 18 (b) is a plan view showing the structure of a magnetoresistive element relating to the information read-only element, and FIG. 18 (c).
FIG. 4 is a plan view showing the structure of a magnetic induction element related to the information recording dedicated element.

As shown in FIG. 18A, a thin film magnetic head 100 used in a fixed magnetic disk device or the like comprises a read-only element (magnetoresistive element) 101 and a write-only element (magnetic induction element) 102. The magnetoresistive element 101 has a magnetoresistive material film 2 and an electrode film 3 formed on a substrate 1 with an insulating film 7 interposed therebetween. The both ends of the magnetoresistive material film 2 are shown in FIG.
The electrode film 3 is connected as shown in FIG. Magnetic induction element
Reference numeral 102 denotes upper and lower cores 4 (4a, 4b) of a soft magnetic material laminated on the magnetoresistive element 101 with an insulating film 8 interposed between the cores 4a and 4b with an interlayer insulating film 6 interposed therebetween. The coil 5 and the coil 5 are spirally wound as shown in FIG.

[0004]

The magnetoresistive material film 2 of the magnetoresistive element 101 is, as shown in FIG. 19A, a base film (face-centered cubic) such as NiCr on a substrate (including an insulating film) 1. A lattice film, an auxiliary film 2a, an exchange coupling film 2b of MnFe (Mn is 50 atomic%), a magnetoresistive film 2c of a NiFe or NiFeCo alloy single-layer thin film, a shunt bias film 2d, and a lateral bias film 2e are sequentially laminated. Thus, the electrode films 3 are formed on both ends of the lateral bias film 2e to form the magnetoresistive element 101. Here, the base film 2a is a film for controlling the orientation of the exchange coupling film 2b formed thereon, and the exchange coupling film 2b is magnetized by applying a longitudinal bias magnetic field to the adjacent magnetoresistive effect film 2c to form a single magnetic domain. A film for controlling magnetization for preventing Barkhausen noise due to variations in magnetization of the resistance effect film 2c, a magnetoresistive film 2c for converting a change in magnetic flux applied to the element into a film resistivity, and a lateral bias film 2e. Is a film that applies a lateral bias magnetic field to the magnetoresistive film 2c and superimposes a leakage magnetic field at the optimum operating bias point to increase the amplitude of the reproduction output. The shunt bias film 2d is the magnetization of the lateral bias film 2e and the magnetoresistive film 2c. Is a film for adjusting the lateral bias magnetic field strength to the.

When there is no particular inconvenience when the orientation of the exchange coupling film 2b is directly formed on the substrate 1, as shown in FIG. 19B, the magnetoresistive material film 2 except for the base film 2a, The exchange coupling film 2b, the magnetoresistive effect film 2c, the shunt bias film 2d, and the lateral bias film 2e are sequentially laminated. As shown in FIG. 19C, the layer order of the magnetoresistive material film 2 is reversed, and the lateral bias film 2e, the shunt bias film 2d, the magnetoresistive effect film 2c, and the exchange coupling film 2b are sequentially laminated on the substrate 1. Some are made up of. Note that FIG.
In the magnetoresistive material film 2 having the layer structure shown in (c), the exchange coupling film 2b can be used as a part of the magnetoresistive effect film 2c (for example, electrode portions at both ends of the magnetoresistive effect film 2c).

The exchange coupling film 2b in the layer structure of the magnetoresistive material film 2 has the same crystal structure (face-centered cubic phase) as the magnetoresistive effect film (NiFe alloy single layer thin film or NiFeCo alloy single layer thin film) 2c. An FeMn-based alloy that is an antiferromagnetic film is used. However, JP-A-4-211106,
As seen in JP-A-3-144909, MnFe alloys have low corrosion resistance. In addition, in a magnetoresistive element using MnFe having a single-layer structure as an exchange coupling film, the electric resistance value of the MnFe exchange coupling film is large even though the magnetoresistive effect film and the exchange coupling film are in direct contact with each other. Is only about four times the electric resistance value of the magnetoresistive film such as NiFe, so that part of the sense current applied to the magnetoresistive film is shunted to the exchange coupling film 2b and output. Voltage change ΔV
(= ΔR · I) becomes smaller.

In order to improve the corrosion resistance and improve and stabilize the exchange coupling magnetic field, an antiferromagnetic film of Co _X Ni _Y O _1-XY or a ferrimagnetic film of Tb _{1 -} is used as the exchange coupling film 2b. An example using _Z Co _Z (Applied Physics Letters 60, 3060, (1992), i Triple E Transition Magnetics, 25, 3695 (1989)) is also seen,
When the above-mentioned materials are used for the exchange coupling film 2b, an oxidation step is required during the process, which leads to an increase in the number of steps. In addition, since rare earth elements are used, there is also the aspect that the cost becomes high.

On the other hand, recently, an artificial lattice film having a laminated periodic structure in which a magnetic film and a nonmagnetic conductive film or the like are alternately laminated two or more times has been actively used as a magnetoresistive film. As a magnetoresistive element using this artificial lattice film, as shown in FIG. 20, a non-magnetic conductive film 12 such as Cu and a magnetic film 13 are alternately formed twice or more on a base film 11 on a substrate 1 ( (2 or more lamination cycles) are laminated, and the protective film 1 is formed thereon
4 has a layered structure (Japanese Patent Laid-Open No. 4-3600).
09). Here, as shown in FIG. 21A, a structure in which a part of the magnetic film 13 is in contact with the exchange coupling film 15,
By adopting a structure in which the exchange coupling film 15 is laminated on the magnetic film 13 as shown in (b), a longitudinal bias magnetic field is applied to the magnetic film 13 in each lamination period to control the magnetization of the magnetic film 13 and Barkhausen.・ We try to suppress noise. Comparing the magnetoresistive effect film of the artificial lattice film and the magnetoresistive effect film of the single-layer NiFe alloy film, the NiF
Although the e alloy film has a low magnetoresistance change rate (MR ratio) of 3%, the saturation magnetic field strength H _{S at} which the magnetoresistance is saturated is several tens Oe.
It is low as below and is a practical magnetoresistive element,
Although the MR ratio of the magnetoresistive film using the artificial lattice film is slightly high at 5%, the saturation magnetic field strength H _S is too high at about 100 Oe. When the MR ratio is high, the reproduction signal output can be large. On the other hand, when the saturation magnetic field strength H _S is too large, the magnetic field sensitivity to the external magnetic field is low. Reduction of _S is required.

As a magnetoresistive element using another artificial lattice film, as shown in FIG. 22, a base film 11 on a substrate 1 is used.
On top of this, an auxiliary film 16 or a non-magnetic conductive film 12, a soft magnetic film 17 which is a first magnetic film, a non-magnetic conductive film 12, a magnetic film 13 or a soft magnetic film 17 which is a second magnetic film, and exchange coupling. Membrane 15
Has one laminated periodic structure and has an artificial lattice film in which two or more periods are laminated. In this artificial lattice film, unidirectional magnetic anisotropy occurs in the second magnetic film 13 formed next to the MnFe exchange coupling film 15, so that the anisotropy-provided second magnetic film 13 is formed. And the angle formed by the respective magnetizations of the first magnetic film 17 to which anisotropy is not applied is changed by the leakage magnetic field (external magnetic field) from the medium. That is, as shown in FIG. 23, when no external magnetic field is applied (H _ex = 0),
Although the angle formed by the magnetizations of adjacent magnetic films is nearly antiparallel (9
0 to 180 °), when an external magnetic field is applied (H
_ex ≠ 0), the angle formed by the magnetizations of the adjacent magnetic films becomes nearly parallel (90 ° or less), and the magnetization can be controlled. In such an artificial lattice film, the magnetoresistive effect is caused by spin scattering that affects the conduction electrons of the spontaneous magnetization of the magnetic film, which is called a giant magnetoresistive effect, and the magnetic field response is steep and the saturation magnetic field strength (H
_S ) is 10 Oe or less, but the magnetoresistance change rate is rather small (<5%). This is because the MnFe film whose electric resistance value is 4 to 10 times larger than that of the magnetic film (NiFe film) or the non-magnetic conductive film (Cu film) is used as the exchange coupling film. Because the overall resistance value ρ of the film) is too high, the electrical resistance change rate Δρ / ρ becomes relatively small. Here, in order to increase the value of the magnetoresistance change rate to about 8%, a magnetic film of Co or the like having a thickness of 1 nm or less must be formed adjacent to the non-magnetic conductive film 12 of Cu or the like. Membrane technology requires complicated steps, resulting in high cost (Journal of Applied Physics 69, (8) (1991) 4774, Japanese Patent Laid-Open No. Hei 4).
-358310).

By the way, in high density recording / reproduction, the recording bit area is naturally miniaturized, so that a magnetoresistive element capable of obtaining a reproduction output having a large amplitude even with a weak external magnetic field (leakage magnetic field) is required. . In order to obtain such high sensitivity, it is important to set an optimum bias point at a point having a large slope of the characteristic curve by the lateral bias film in the RH characteristic of FIG. It is necessary to obtain a magnetoresistive effect film that exhibits steep RH characteristics. In order to obtain an R-H characteristic having a steep slope, the magnetoresistive change rate Δρ / ρ of the magnetoresistive film is increased and the saturation magnetic field strength H _S is decreased to synergistically increase the slope. . The rate of change in magnetic resistance Δρ /
To increase ρ, the total resistance value of the magnetoresistive film ρ
Is required to be small and the resistance change amount Δρ is required to be large.

On the other hand, FIG. 25 (A) is a sectional view of the magnetic induction element 102, and FIG. 25 (B) is a view for explaining the return magnetic domain structure of the magnetic core 4 of the magnetic induction element 102. 25A, the magnetic induction element 102 includes a lower magnetic core 4a, a magnetic gap g, a coil 5, an insulating film 6, and an upper magnetic layer on the substrate 1 (the substrate 1, the magnetoresistive element 101 and the insulating film 8). The core 4b and the protective film 9 are sequentially provided. The lower magnetic core 4a and the upper magnetic core 4b constitute a magnetic circuit,
It is opened by the magnetic gap g on the head surface. The coil 5 is wound a plurality of times with the insulating film 6 interposed, and a high frequency magnetic recording signal is supplied. The protective layer 9 covers the upper magnetic core 4b provided on the uppermost part of the substrate 1. The magnetic cores 4a and 4b are made of a soft magnetic thin film having a high magnetic permeability, and uniaxial anisotropy is imparted to the magnetic cores 4a and 4b, and the hard axis is used in the magnetic path direction of the magnetic head. Currently, the saturation magnetic flux density is used as the material of the magnetic cores 4a and 4b.
Permalloy alloy of about 0.7 to 0.8 T is generally used.

With the increase in recording density, the magnetic core 4 of the magnetic induction element 102 is required to have a high initial permeability in the initial magnetization process even in a high frequency band of 10 MHz or higher. Further, in order to cope with higher density of data processing, a magnetic material having a high saturation magnetic flux density is required, and cobalt (Co) -hafnium (Hf) -tantalum (Ta) having a saturation magnetic flux density of 1.2T is required. 3 element amorphous alloy film or Co-Hf-Ta-palladium (Pd)
Co-based amorphous alloy films such as the above have been studied.

When an external magnetic field is applied to the magnetic cores 4a and 4b by the magnetic recording signal flowing through the coil 5, a prism-like free-wheeling magnetic domain structure as shown in FIG. 25B appears in the magnetic cores 4a and 4b. A triangular magnetic domain is formed at the core end (head surface side). Since the magnetization of the triangular magnetic domain is parallel to the magnetization from the medium, it causes discontinuous domain wall motion with respect to the high frequency magnetic field. On the other hand, the magnetization in the hexagonal domain is perpendicular to the magnetization from the medium, so that the magnetization rotation occurs with respect to the high frequency magnetic field. For this reason, when the operating frequency of the magnetic head becomes higher as the data processing speed becomes higher and the density becomes higher, it can be discussed as one of the characteristics of the dynamic magnetization process. Changes occur over time, and domain wall movement stops following from several MHz.

Therefore, in the high frequency band, the magnetic cores 4a, 4a
The initial magnetic permeability (initial magnetic susceptibility) of b decreases. Moreover, since the domain wall movement is irreversible, it becomes difficult to perform stable reproduction. The magnetization rotation further follows the high frequency band. Therefore, a stable magnetic domain structure of the magnetic core is required.

In order to solve this problem, a method is conceivable in which a magnetic material and a non-magnetic material are alternately laminated, and the laminated structure is adopted as a magnetic core to form a single magnetic domain. For example,
IBM Disclosure Bulletin, Vol.21, No.11,
1979, pp. 4367 discloses a structure in which thin films of permalloy and silicon oxide are alternately laminated. This structure is
By sandwiching a sufficiently thin silicon oxide film between permalloy thin films, the upper and lower permalloy thin films are tightly magnetically coupled to each other to create an annular path of magnetization, suppressing the occurrence of triangular magnetic domains, and suppressing the magnetic core's single magnetic domain only by the hexagonal magnetic domains. This is aimed at achieving magnetic domains. However, it is necessary to use a material having a high saturation magnetic flux density (Bs) for the magnetic core in order to cope with higher density of data processing. This is because when the saturation magnetic flux density (Bs) is small, the write magnetic field for the medium also becomes small.

As a material having a high saturation magnetic flux density, soft magnetic Co is used.
A laminated film of an alloy and silicon nitride is described in JP-A-4-214205. With this combination, good magnetic properties can be obtained. By the way, when a soft magnetic Co alloy and silicon nitride are laminated, Ar + is formed at the time of film formation of silicon nitride.
It is necessary to carry out reactive sputtering in an N ₂ atmosphere. However, before the formation of the Co alloy film is started, nitrogen is drawn in the vacuum container of the sputtering apparatus, so that the entire film forming time becomes long and the cost becomes high. This causes a problem of lack of mass productivity. Further, when a Co alloy film is formed in an Ar + N ₂ atmosphere, nitrogen is mixed into the Co alloy, so that there is a problem that the saturation magnetic flux density is lowered.

In view of various problems of the thin film magnetic head including the conventional magnetoresistive element and magnetic induction element, the first object of the present invention is to provide an exchange coupling film, a magnetic film and a non-magnetic conductive film. It is to realize a high-sensitivity magnetoresistive element compatible with high-density magnetic recording by optimizing the selection of the film material of the film, and a second object of the present invention is to realize a high-sensitivity magnetoresistive element. By optimizing the selection of the non-magnetic thin film material capable of sputter film formation, it is intended to realize a magnetic induction element capable of high speed and high density recording. Therefore, the present invention is applicable to high speed and high density recording and reproduction. An object is to provide a suitable thin film magnetic head.

[0018]

As a thin film magnetoresistive element, a magnetoresistive element having a single-layer structure magnetoresistive film adjacent to an exchange coupling film, a first magnetic film adjacent to the exchange coupling film, It can be roughly classified into a magnetoresistive element having a magnetoresistive effect film composed of an artificial lattice film in which two or more cycles are stacked with one stacked cycle including at least a magnetic conductive film and a second magnetic film.

In order to solve the above problems, the first means taken by the present invention is to use Mn50 as the exchange coupling film when a single layer film such as a NiFe film is used as the magnetoresistive film.
Cu, Ni, Pd and Co for at.% MnFe
At least one additive selected from the group consisting of 25
The alloy film is characterized by being added at a total additive concentration of at.% or less.

The second means of the present invention is to use pure Mn as an exchange coupling film when an artificial lattice film is used as the magnetoresistive film.
The alloy film is characterized in that at least one additive element selected from the group consisting of Cu, Ni, Pd and Co is added at an additive concentration of 25 at.% Or less. The exchange coupling film having such a material composition can be formed by, for example, an ion beam sputtering method, a DC magnetron sputtering method, an RF magnetron sputtering method or a vapor deposition method.

As a third means of the present invention, in a magnetoresistive element having a magnetoresistive film having a single-layer structure, the exchange coupling film is an antiferromagnetic film mainly composed of Mn _A Co _1-A alloy magnetic thin film or It is characterized in that it is composed of a ferrimagnetic film, and the composition range of the Mn _A Co _1-A alloy magnetic thin film satisfies 0.5 <A <0.9. Here, Ru, Re, Ir, Pd, Fe, Ni, Cu, S are added to the Mn _A Co _1-A alloy magnetic thin film.
c, Y, Ti, Zr, Hf, Th, V, Nb, Ta, P
a, Cr, Mo, W, Tc, Np, Zn, Al, Si,
At least one element selected from the group consisting of Au, Pt and Ag is added at 30 at. % Addition is desirable. The thickness of the Mn _A Co _1-A alloy magnetic thin film is 100.
It is desirable that it is less than 0Å. On the other hand, even in a magnetoresistive element having a magnetoresistive film made of an artificial lattice film,
It is characterized in that the exchange coupling film is composed of an antiferromagnetic film or a ferrimagnetic film mainly composed of a magnetic thin film of MnCo alloy. Even in such a case, Ru, Re, I may be added to the MnCo alloy magnetic thin film.
r, Pd, Fe, Ni, Cu, Sc, Y, Ti, Zr,
Hf, Th, V, Nb, Ta, Pa, Cr, Mo, W,
It is desirable to add at least one element selected from the group consisting of Tc, Np, Zn, Al, Si, Au, Pt and Ag.

As a fourth means of the present invention, a magnetoresistive element having a magnetoresistive effect film composed of an artificial lattice film in which a laminated structure including at least a magnetic film and a non-magnetic conductive film is laminated for two cycles or more as one lamination cycle. In, the magnetic film is Fe
_1-BC Cr _B Co _C alloy magnetic thin film, non-magnetic conductive film Cu, Cr or CuCr, Fe _1-BC
The composition range of the Cr _B Co _C alloy magnetic thin film is 0.05 <B <0.15.
And 0.50 <C <0.60 are satisfied. The thickness of the magnetic film is preferably 300 Å or less. Further, the magnetic film, instead of the Fe _1-BC Cr _B Co _C alloy magnetic thin film made of Fe _D Al _1-D alloy magnetic film, Fe _D Al
The composition range of the _1-D alloy magnetic film may satisfy 0.75 <D <0.95. Furthermore, the magnetic film is Fe _1-BC
In place of the Cr _B Co _C alloy magnetic thin film, a Ni _E Co _1-E alloy magnetic film is formed, and the composition range of the Ni _E Co _1-E alloy magnetic film satisfies 0.70 <E <0.85. good.
Furthermore, the magnetic film is made of a Fe _F Co _1-F alloy magnetic film in place of the Fe _1-BC Cr _B Co _C alloy magnetic thin film,
e The composition range of the _F Co _1-F alloy magnetic film is 0.65 <F <0.95.
May be satisfied. Then, Ti, Ta and / or Ru in a total concentration of 10 at% or less may be added to the above various alloy magnetic films.

As a fifth means of the present invention, in a magnetic induction element having a magnetic core having a magnetic gap g, the magnetic core has a laminated structure in which a soft magnetic thin film and a non-magnetic thin film are sequentially stacked. The soft magnetic thin film is composed of cobalt Co, hafnium Hf, tantalum Ta, and palladium P.
A non-magnetic thin film 11B composed of a four-element amorphous alloy of d
Is composed of silicon Si, aluminum Al, oxygen O and nitrogen N. In such a case, cobalt Co, hafnium Hf, tantalum T of the soft magnetic thin film
The composition ratio of a and palladium Pd is Co _(1-XYZ) Hf _X
If Ta _Y Pd _Z , 3.0 ≦ X ≦ 4.0 at%, 4.5 ≦
It is desirable that Y ≦ 5.5 at% and 1.3 ≦ Z ≦ 2.3 at%. Furthermore, the layer thickness of the soft magnetic thin film is 1500 ~
3000 [Å], and the thickness of one layer of non-magnetic thin film is 50-15
It is 0 [Å], and it is desirable that the number of stacked soft magnetic thin films and non-magnetic thin films is an even number.

The thin film magnetic head is preferably formed by laminating the magnetoresistive element and the magnetic induction element having the above structure.

[0025]

According to the first means, in the magnetoresistive element having the magnetoresistive film having the single-layered structure as described above, when a constant sense current is applied to the magnetoresistive film, the magnetoresistive film is removed from the magnetic recording medium. By changing the leakage magnetic field, a voltage change corresponding to the resistance change of the magnetoresistive film can be obtained, and the direction of the leakage magnetic field can be detected. Here, the exchange coupling film is changed to Cu, Ni, Pd with respect to 50 at.% MnFe. Or, if it is composed of a ternary to ternary alloy thin film in which Co is added at a total additive concentration of 25 at.% Or less,
Since the electric resistance value of the exchange coupling film is higher than the electric resistance value of the MnFe film used in the conventional exchange coupling film, in this type of magnetoresistive element, the sense current applied to the magnetoresistive effect film is used. Is more difficult to split into the exchange coupling membrane.
Therefore, the amount of current flowing through the magnetoresistive film having a change in resistance value becomes larger, so that the output voltage change ΔV (= ΔR · I).
And the reproduction sensitivity is improved. According to the second means, in the magnetoresistive element using the magnetoresistive effect film made of the artificial lattice film, the magnetoresistive effect is different from the mechanism of the magnetoresistive effect film having the single-layer structure described above. The giant magnetoresistive effect, which occurs when the spin scattering probability of conduction electrons is changed by the arrangement of the spontaneous magnetization (parallel or antiparallel), is used.
When composed of a 2-4 quaternary alloy thin film in which u, Ni, Pd or Co is added at a total additive concentration of 25 at.% or less, the electrical resistance value of the exchange coupling film is the MnFe film used in the conventional exchange coupling film. Since this is smaller than the electric resistance value of, the magnetoresistive element of this type can reduce the electric resistance value ρ of the entire magnetoresistive effect film, and the magnetoresistance change rate is relatively Δρ /
ρ increases, and the reproduction sensitivity improves. In any of the types, the improvement of the reproduction sensitivity is meaningful for the reproduction of high density recording.

According to the third means, when the magnetoresistive film is a single-layer magnetic film, an antiferromagnetic film mainly composed of MnCo or a ferrimagnetic film is used as the exchange coupling film, whereby the magnetic film is formed. It is possible to obtain a magnetoresistive element capable of excellent magnetization control, having a large magnetoresistance change rate, and high magnetic field sensitivity. Further, since the exchange coupling film is not a FeMn-based alloy, it has high corrosion resistance. Furthermore, Ru, Re, Ir, Pd,
Fe, Ni, Cu, Sc, Y, Ti, Zr, Hf, T
h, V, Nb, Ta, Pa, Cr, Mo, W, Tc, N
By adding at least one element selected from the group consisting of p, Zn, Al, Si, Au, Pt and Ag, heat resistance and the like can be further improved. Furthermore, when the magnetoresistive film is an artificial lattice film, the magnetic anisotropy of the magnetic film in the barrier layer can be controlled by using an antiferromagnetic film mainly containing MnCo or a ferrimagnetic film as the exchange coupling film. Yes, a large magnetoresistance change rate can be obtained,
Contributes to the improvement of magnetic sensitivity. Further, since an oxidation step is unnecessary, low manufacturing cost can be realized.

Further, even if the above-mentioned elements are added to the MnCo alloy film of the artificial lattice film, the heat resistance can be improved.

According to the fourth means, the magnetoresistive film is made of Fe.
_1-BC Cr _B Co _C (cobalt-chromium-iron) alloy magnetic thin film, Fe _D Al _1-D (aluminum
A magnetic film formed of an iron) alloy magnetic film, a magnetic film formed of a Ni _E Co _1-E alloy magnetic film, or a magnetic film formed of a Fe _F Co _1-F alloy magnetic film, and Cu (copper), Cr (chrome), Alternatively, it is an artificial lattice film in which a non-magnetic conductive film made of CuCr (chromium / copper) is alternately laminated two or more times, and Fe _1-BC
The composition range of the Cr _B Co _C alloy magnetic thin film is 0.05 <B <0.1.
5, 0.50 <C <0.60, the composition range of the Fe _D Al _1-D alloy magnetic film is 0.75 <D <0.95, and the composition range of the Ni _E Co _1-E alloy magnetic film is 0.70 <E <0.85, Fe _F Co ₁ By setting the composition range of the _-F alloy magnetic film to be 0.65 <F <0.95, it is possible to increase the magnetoresistance change rate. For example, a high magnetoresistance change rate of 5% or more can be obtained as compared with the conventional example. Further, in the magnetoresistive element of the present invention, the thickness of the non-magnetic conductive film is adjusted, the exchange coupling film is used for controlling the magnetization of the magnetic film of the barrier layer, and the soft magnetic film such as FeNi is used for the other magnetic film. As a result, the magnetic field sensitivity can be improved. For example, in a magnetic film, a FeCrCo alloy thin film, a FeAl alloy thin film having a relatively small magnetostriction constant (<10 ⁻⁶ ) composition range,
By using the NiCo alloy thin film and the FeNi alloy thin film, variations in saturation magnetic field strength (magnetic field sensitivity) of magnetoresistance induced by the inverse magnetostrictive effect from the stress applied to the film when the magnetostriction constant of the magnetic film is high, and mass production It is possible to reduce variations in the characteristics of the devices to be manufactured and improve the reliability. As a result, it is possible to improve the yield rate. When forming a magnetic film or a non-magnetic conductive film, the cost required for producing a magnetoresistive film is reduced by using an ion beam sputtering method or the like, which has a faster film forming rate than molecular beam evaporation. be able to. Further, the total concentration of Ti and Ta in the various alloy magnetic films is 10 [at%] or less.
When Ru and / or Ru (ruthenium) is added, the corrosion resistance of the magnetoresistive effect film can be improved as compared with the conventional example.

According to the fifth means, the magnetic core of the magnetic induction element has a laminated structure in which a soft magnetic thin film and a non-magnetic thin film are sequentially stacked, and the soft magnetic thin film is Co _(1-XYZ) Hf.
Consisting _X Ta _Y Pd _Z of 4 elements amorphous alloy, since the non-magnetic thin film is made of Si, Al, O and N, faster data processing, write frequency increases in density becomes higher In this case, it is possible to suppress the decrease in magnetic permeability as much as possible. In particular, a magnetic core in which a soft magnetic thin film and a non-magnetic thin film are stacked an even number of times has a stable single domain structure, so that the domain wall movement can be suppressed well, and the decrease in permeability can be suppressed as much as possible. Suitable for recording. Also, Ar
Since the non-magnetic thin film can be continuously formed by the inside sputtering, the manufacturing cost can be reduced.

[0030]

EXAMPLE Next, a thin film magnetic head according to an example of the present invention will be described.

[Embodiment 1] FIG. 1A is a sectional view showing the structure of a magnetoresistive element according to Embodiment 1 of the present invention.

The magnetoresistive element 20 of the present example has a NiCr film as an auxiliary film 31, an exchange coupling film 32 in which Cu, Ni, Pd or Co is added to an MnFe base on the surface side of the substrate 1, and a magnetoresistive film. NiFe film (N
i is 82 at.%), a non-magnetic film 34, and a lateral bias film 35 made of a shunt bias film or a soft magnetic bias film.
And has a structure in which they are sequentially stacked. Here, the auxiliary film 31 promotes the growth of the crystal structure of the exchange coupling film 32 formed on the upper layer side by a face-centered cubic structure. In such a magnetoresistive element 20, the direction of the magnetic flux leaking from the magnetic recording medium is detected by utilizing the fact that the electric resistance of the magnetoresistive effect film 33 changes due to the change of the leakage magnetic field from the magnetic recording medium. That is, when the leakage magnetic field from the magnetic recording medium changes in a state where a constant sense current is applied to the magnetoresistive effect film 33 via the electrode film, the electric resistance value of the magnetoresistive effect film 33 changes. As a result of obtaining the voltage change corresponding to the change, the direction of the magnetic flux is detected. The lateral bias film 35 sets the optimum bias point for the lateral bias magnetic field with respect to the magnetoresistive effect film 33. The non-magnetic film 34 adjusts its lateral bias magnetic field. The exchange coupling film 32 is in a state of being in direct contact with the magnetoresistive effect film 33, and a longitudinal bias magnetic field is applied to the magnetoresistive effect film 33 to make the magnetoresistive effect film 33 into a single magnetic domain, thereby providing multi-domain property and domain wall. Barkhausen noise due to movement is suppressed.

Since the exchange coupling film 32 is directly laminated on the magnetoresistive film 33, a part of the sense current applied to the magnetoresistive film 33 is partially exchanged.
If the current is shunted to (1), a large voltage change (reproduction output) cannot be obtained from the magnetoresistive effect film 33. Therefore,
In the present example, the exchange coupling film 33 is formed as a multi-component alloy thin film in which an additive such as Cu, Ni, Pd or Co is contained in an MnFe alloy having Mn of 50 at.% With a total additive concentration of 25 at.% Or less.

The exchange coupling film 32 is formed by the ion beam sputtering method under the following film forming conditions.

Film forming conditions Argon gas pressure P _Ar = 1.0 × 10 ⁻⁴ Torr Accelerating voltage V _ACC = 0.5 kV Accelerating current I _ACC = 120 mA Substrate temperature T _SUB <43 ° C. Target 6 ″ φ (Purity 99.9) % Or more) The composition of the exchange coupling film 32 formed under these conditions is shown in Table 1.
The composition range in which the exchange coupling force is obtained from the exchange coupling film 32 is within the range defined by the arrow in Table 1.

[0036]

[Table 1]

That is, an alloy in which Cu is added to MnFe having an Mn of 50 at.% And Cu of about 4 at.% To about 11 at.%, And Mn of 50 at.% MnFe with Ni of about 11 at.% To about 20 at.
% Alloy with Mn of 50 at.% MnFe alloy with Pd of about 10 at.% To about 20 at.%, Mn of 50 a
In an alloy in which Co is added to t.% MnFe at about 5 at.% or less, exchange coupling is exhibited by stacking with a NiFe film,
It was found that the function as the exchange coupling film 32 is exerted.

Among the compositions shown in Table 1, in the composition range where the exchange coupling force is obtained, which alloy (MnF
eCu, MnFeNi, MnFePd, MnFeCo)
It was also confirmed that the electric resistance value was higher than that of the MnFe alloy (binary alloy) having Mn of 50 at.%. Therefore, by using an alloy within the above composition range as the exchange coupling film 32, it is possible to apply a longitudinal bias to the magnetoresistive effect film 33, and the electric resistance value of the exchange coupling film 32 is the same as that of the conventional one. Since the electric resistance value of the 50 at.% MnFe film used as the exchange coupling film in the magnetic head is sufficiently high, the sense current applied to the magnetoresistive film 33 is shunted to the exchange coupling film 32. Hateful. Therefore, a large voltage change (reproduction output) can be obtained with a small sense current, so that sensitivity can be improved and power consumption can be reduced.

As the exchange coupling film 32, 50 at.%
The composition obtained by adding Cu, Ni, Pd, Co, or the like to MnFe is not limited to the magnetoresistive element 20 having the laminated structure shown in FIG. 1A, but the magnetic structure shown in FIGS. It can also be used for the resistance elements 21 and 22. That is, as in the magnetoresistive element (modification of Example 1) 21 shown in FIG. 1B, the auxiliary film 3 is formed on the surface of the substrate 1.
Instead of forming 1, the exchange coupling film 32, the magnetoresistive effect film 33, the nonmagnetic film 34, and the lateral bias film 35 may be laminated in this order. In this case, the auxiliary film 3
Instead of 1, the substrate 1 may control the crystal structure of the exchange coupling film 33. On the other hand, in the magnetoresistive element (another modification of the first embodiment) 22 shown in FIG.
Upside down from the stacking order shown in (a), on the surface of the substrate 1,
Lateral bias film 35, non-magnetic film 34, magnetoresistive film 33
And the exchange coupling film 32 are laminated in this order. In this case, N used as the magnetoresistive film 33 is used.
The crystal structure of the exchange coupling film 32 may be controlled by the iFe film.

As described above, the magnetoresistive film 3 having a single-layer structure is used.
In the magnetoresistive elements 20, 21, and 22 provided with 3,
As the exchange coupling film 32, an MnFe alloy containing 50 at.% Of Mn and 25 a of an additive such as Cu, Ni, Pd or Co is used.
Since it is a multi-component alloy thin film containing a total additive concentration of t.% or less, the electric resistance value of the exchange coupling film 33 becomes larger than before, and a highly sensitive magnetic reproducing characteristic can be obtained.

[Second Embodiment] FIG. 2 is a sectional view showing the structure of a magnetoresistive element according to a second embodiment of the present invention.

The magnetoresistive element 23 of this example has a multi-layered magnetoresistive film 40 made of an artificial lattice film as a magnetoresistive film. That is, as shown in FIG.
The magnetoresistive element 23 includes the auxiliary film 31, a multi-layered magnetoresistive film 40 including an artificial lattice film, and a nonmagnetic film 34 on the substrate 1.
And the lateral bias film 35 are laminated in this order. The magnetoresistive film 40 is formed of a Cu film or a C film on a substrate 41 (including the substrate 1 and the auxiliary film 31) as shown in FIG.
First non-magnetic conductive film 45 of r film, NiFe film or Fe film
Magnetic film 44, Mn-based exchange coupling film 43 containing Cu, Ni, Pd or Co as an additive, and non-magnetic conductive film 4
5, and the second magnetic film 46 of the NiFe film, the Fe film, the Co film, or the FeCo film has a layer sequence of one stacking period structure, and 2
It is an artificial lattice film that is laminated for more than a period.

Also in the magnetoresistive element 23 having such a structure, in the magnetoresistive effect film 40, the electric resistance changes due to the change of the leakage magnetic field from the magnetic recording medium, so that the magnetic flux leaking from the magnetic recording medium is utilized. The direction is detected.
That is, when a constant sense current is applied to the magnetoresistive film 40 via the electrode film, a change in the leakage magnetic field from the magnetic recording medium causes a voltage change corresponding to the resistance change of the magnetoresistive film 40. To be Here, the lateral bias film 3
Reference numeral 5 applies a lateral bias magnetic field to the magnetoresistive film 40 to set an optimum bias point.

The exchange coupling film 43 in the magnetoresistive film 40 of the artificial lattice film controls the direction of magnetization so as to impart unidirectional anisotropy to the first magnetic film 44 formed on the surface side thereof. As shown in FIG. 23, the magnetization of the first and second magnetic films 44 and 46 of the magnetoresistive effect film 40, which has a function, is in a state where the external magnetic field Hex is not applied (demagnetization state, H
ex = 0), the magnetization of the second magnetic film 46 on the upper layer side and the magnetization of the first magnetic film 44 on the lower layer side are antiparallel to each other with the non-magnetic conductive film 45 sandwiched therebetween, that is, the anti-magnetism is different between the layers. While they are arranged in parallel, they are arranged in parallel when the external magnetic field Hex is applied. Therefore, when an external magnetic field is applied, that is, when the leakage magnetic field from the magnetic recording medium changes, the spin exerted on the conduction electrons due to the arrangement of the spontaneous magnetization of the first and second magnetic films 44 and 46 of the magnetoresistive film 40. The scattering probability changes, the giant magnetoresistive effect appears, and the electric resistance value of the magnetoresistive film 40 changes.

Magnetoresistive film 4 of such an artificial lattice film
In the magnetoresistive element 23 having 0, the exchange coupling film 43
Has been confirmed to have the function of reducing the magnetic field required to saturate the resistance change of the magnetoresistive film 40 and increasing its sensitivity, and like the nonmagnetic conductive film 45,
A function of reducing the overall resistance value (ρ ₀ ) of the magnetoresistive film 40 and increasing the magnetoresistance change rate (Δρ / ρ ₀ ) which is the ratio of the resistance change (Δρ) of the magnetic film to the overall resistance. Also has.

In this example, the exchange coupling film 43 of the artificial lattice film is made of pure Mn containing Cu, Ni, Pd or Co of 25a.
It is formed as an alloy containing a total additive concentration of t% or less. Here, the exchange coupling film 43 is formed by an ion beam sputtering method, and the film forming conditions are as follows.

Film forming conditions Argon gas pressure P _Ar = 1.0 × 10 ⁻⁴ Torr Accelerating voltage V _ACC = 0.5 kV Accelerating current I _ACC = 120 mA Substrate temperature T _SUB <43 ° C. Target 6 ″ φ (Purity 99.9) % Or more) The exchange coupling film 53 formed under these conditions is as shown in Table 2, and the composition range in which the exchange coupling force is obtained is shown in Table 2.
Is the range indicated by the arrow.

[0048]

[Table 2]

That is, Cu is added to Mn at about 4 at.% To about 1.
5 at.% Added alloy, Mn to about 14 at.% To about 30 at.% Alloy, and Mn to about 13 at.% To Pd.
Alloy containing approximately 25 at.%, Co in Mn of approximately 9 at.% ~
In the alloy with about 39 at.% Added, a magnetic film (eg N
When an iFe film) is laminated, it exhibits exchange coupling, and alloy films having these compositions can be used as the exchange coupling film 43.

Among the compositions shown in Table 2, in the composition range where the exchange coupling force is obtained, which alloy (MnC
u, MnNi, MnPd, MnCo) also has a larger electric resistance value than pure Mn, but has a smaller electric resistance value than the MnFe alloy used for the exchange coupling film of the conventional magnetic head. . Therefore, the resistance value ρ of the entire magnetoresistive effect film 40 decreases, and the magnetoresistance change rate Δρ / ρ obtained from the magnetoresistive element 23 is relatively large. Therefore, the reproduction sensitivity can be improved. Moreover, the magnetoresistive effect film 40 includes the nonmagnetic conductive film 45, the first magnetic film 44, the exchange coupling film 43, the nonmagnetic conductive film 45, and the second magnetic film 46.
The laminated structure is formed by stacking two or more cycles as one cycle structure, and the resistance structure is a parallel connection. Therefore, the combined resistance value of the entire magnetoresistive effect film 40 is small. Therefore,
The rate of change in magnetic resistance is large.

As the exchange coupling film 43, Mn was replaced with C.
The composition to which u, Ni, Pd or Co is added is not limited to the magnetoresistive element 23 having the laminated structure shown in FIG. 2, but the magnetoresistive element 2 having the structure shown in FIGS. 4A and 4B.
It can also be used for 4, 25. That is, FIG.
In the magnetoresistive element 24 shown in (a), the magnetoresistive effect film 40 of the artificial lattice film shown in FIG. 3 is formed on the surface of the substrate 1 without forming the auxiliary film 32, and the nonmagnetic film is formed on the surface side. Three
4 and the lateral bias film 35 are laminated. On the other hand, the magnetoresistive element 25 shown in FIG.
The lateral bias film 35 is formed on the surface of the substrate 1 upside down from the laminated structure shown in (a), and the nonmagnetic film 34 is formed on the surface side.
And a structure in which the magnetoresistive effect film 40 of the artificial lattice film is laminated.

As described above, also in Examples 1 and 2, by changing the composition of the exchange coupling film exhibiting exchange coupling and optimizing the electric resistance value thereof, the magnetoresistive element capable of improving the sensitivity was realized. However, among the manufacturing methods, the film forming method is not limited to the ion beam sputtering method, and DC
The film may be formed by a magnetron sputtering method, an RF magnetron sputtering method or a vapor deposition method.

Regarding the amount of Cu, Ni, Pd or Co added with respect to Mn, it is possible to exhibit exchange coupling whether each additive is added alone or a plurality of additives are added. In addition, by setting the total concentration of the additive to 25 at.% Or less, the electric resistance value of the exchange coupling film can be properly set.

[Third Embodiment] FIG. 5 is a sectional view schematically showing the layer structure of a magnetoresistive element according to a third embodiment of the present invention.
The magnetoresistive element 26 of this example has a layer structure having a magnetoresistive effect film having a single-layer structure, and has a film thickness of 3 mainly on NiFe on the substrate 1.
It has a structure in which a 0 nm single-layer magnetoresistive film 51 and an exchange coupling film 52 having a film thickness of 50 nm which is an antiferromagnetic film or a ferrimagnetic film of a CoMn alloy are sequentially laminated. The exchange coupling film 52 is a film that controls the magnetization of the magnetoresistive effect film 51 as described above. Although not shown, the lateral bias film,
A base film and a shunt bias film are formed as needed.

The thin film was produced by the ion beam sputtering method in this example. However, a general vapor deposition method, a sputtering method, or a molecular beam vapor deposition method may be used. The film forming conditions are as follows.

Film forming conditions Argon gas pressure P _Ar = 1.0 × 10 ⁻⁴ Torr Accelerating voltage V _ACC = 0.5 kV Decelerating voltage −200 V Accelerating current I _ACC = 120 mA Substrate rotation 3 rpm Substrate temperature T _SUB <45 ° C. Substrate applied Magnetic field 100-300 Oe target CoMn, NiFe (purity> 9
9.9%) Chip Ru, Re, Ir, Pd, Fe,
For the Ni, Cu thin film production substrate 1, glass, ceramics such as Al ₂ O ₃ —TiC, magnesium oxide, Si or the like is used. In order to increase the flatness on the substrate 1 and to control the orientation, a transition metal alloy thin film such as NiCr may be formed as a base film of 50 Å or more.

In order to increase the flatness of the base film and to clean the substrate surface, substrate heating (heat treatment) and ion irradiation may be performed during or before film formation.

In the layer structure of the present example shown in FIG. 5, it was tested that the exchange coupling magnetic field between the magnetoresistive effect film 51 and the exchange coupling film 52 causes unidirectional magnetic anisotropy in the magnetoresistive effect film 51. Was observed.

FIG. 6A shows changes in the exchange coupling magnetic field (He ₁ ) with respect to the Mn composition ratio (A) of the exchange coupling film 52.
As is clear from this figure, exchange coupling occurs at 0.5 <A <0.9, and the maximum value of the exchange coupling magnetic field He ₁ is shown at A to 0.7. In a single-layer magnetoresistive effect film using FeMn for the exchange coupling film, the exchange coupling magnetic field He ₁ is
Although it is about 20 Oe, as in this example, the exchange coupling film 52
Even when a binary alloy thin film of Mn-Co is used for
An exchange coupling magnetic field He ₁ of a certain degree could be obtained. This makes it possible to control the magnetization of the NiFe film and reduce Barkhausen noise when used in an MR element.
FIG. 6B shows a case where the MnCo film and the MnFe film are used as the exchange coupling film 52 under constant temperature and humidity (80 ° C.).
6 is a graph showing the holding time dependence of the exchange coupling magnetic field He ₁ at C, 80% humidity. As can be seen from FIG. 6B, the corrosion resistance is superior when the MnCo film is used as the exchange coupling film 52.

[Embodiment 4] This embodiment is also an example of a magnetoresistive element having a magnetoresistive film having a single-layer structure as shown in FIG. 5, and the point different from Embodiment 3 is that the Mn--Co binary alloy thin film is predetermined. In the exchange-coupling film to which the additional element of is added. The manufacturing method was the same as in Example 3. However, as shown in the last section of the above film forming conditions, on the MnCo target, additional elements (Ru, Re, Ir, Pd, Fe, Ni, Cu, Sc,
Y, Ti, Zr, Hf, Th, V, Nb, Ta, Pa,
Cr, Mo, W, Tc, Np, Zn, Al, Si, A
u, Pt, Ag) chips (shape 5 × 5 × 1t, 3 × 3)
The difference is that the exchange-coupling film is formed by using the target that has been composited by supplying by x1t).

FIG. 7 shows the exchange coupling film with FeMn, MnCo,
The heat resistance test result when a thin film of MnCoRu or MnCoTi is used is shown. This heat resistance test was conducted at 3.0 × 10 ^-5 Torr
After exhausting to below, at about 1 to 100 ° C-400 ° C
The sample was measured for the exchange coupling magnetic field after being kept warm for a certain period of time and then taken out to the atmosphere. In the case of the exchange coupling film (MnCoRu, MnCoTi) added with Ru and Ti, the exchange coupling magnetic field does not decrease as compared with any exchange coupling film (FeMn, MnCo) without addition of Ru and Ti even at high temperature, and the heat resistance is high. It was found that the sex was improved. It should be noted that MnCo has better heat resistance characteristics of the exchange coupling magnetic field than FeMn.

[Embodiment 5] FIG. 8 is a sectional view schematically showing the structure of a magnetoresistive film in a magnetoresistive element according to Embodiment 5 of the present invention.

In this example, similar to the second embodiment, the non-magnetic conductive film 67 and the first magnetic film 6 are formed on the auxiliary film 62 on the substrate 61.
4, a structure in which the exchange coupling film 63, the non-magnetic conductive film 65, and the second magnetic film 66 are stacked is defined as one stacked periodic structure, and an artificial lattice film in which two or more cycles are stacked is used as the magnetoresistive effect film 60. Here is an example. Here, for example, SUB / [Cr
(5) / Fe (2)] 30, the substrate (S
UB), a Cr film with a film thickness of 5Å, and then Fe with a film thickness of 2Å
It is shown that the artificial lattice film has a structure in which the films are laminated for 30 periods as one laminated periodic structure. As shown in Table 3, the film layer structure of the magnetoresistive effect film 60 of this example is SUB / Fe (50)
[Cu (20) / NiFe (30) / CoMn (50) / Cu
(20) / NiFe (30)] 2. That is, as shown in FIG. 8, the film thickness 5 as the auxiliary film 62 for controlling the crystal structure of the film formed on the upper surface side of the substrate 61.
An exchange coupling film having a 0Å Fe film, a Cu nonmagnetic conductive film 67 having a film thickness of 20Å, a first magnetic film 64 of NiFe having a film thickness of 30Å, and a CoMn alloy thin film having a film thickness of 50Å is formed on the Fe film. 63, a Cu non-magnetic conductive film 65 having a film thickness of 20 Å, and a second magnetic film 66 of NiFe having a film thickness of 30 Å are sequentially laminated twice as an artificial lattice film. On the other hand, Comparative Example (1) in Table 3 shows the case where the magnetoresistive film is a single-layer NiFe film, and Comparative Example (2)
Although the magnetoresistive film is an artificial lattice film,
Fe film with a thickness of 50Å as
0Å Cu non-magnetic conductive film 67 and 30Å film thickness NiF
The first magnetic film 64 of e, the exchange coupling film 63 of a FeMn alloy thin film having a film thickness of 50Å, the Cu nonmagnetic conductive film 65 having a film thickness of 20Å, and the second magnetic film 66 of NiFe having a film thickness of 30Å. An artificial lattice film is formed by stacking the structure in which the layers are sequentially stacked two times. This example is characterized in that a CoMn alloy thin film is used as the exchange coupling film 63 instead of the FeMn alloy thin film. As is clear from Table 3, in the case of this example, the magnetoresistance change rate (MR ratio) is large at 7%, which is superior to that of the comparative example (2), and the reproduction signal output can be increased. Further, the magnetoresistive saturation magnetic field (H _s ) is slightly larger at about 20 Oe than in the cases of Comparative Examples (1) and (2), but even at this value, a high magnetic sensitivity can be practically obtained. Further, since an oxidation step is unnecessary, low manufacturing cost can be realized.

[0064]

[Table 3]

The use of the CoMn alloy thin film as the exchange coupling film has various advantages as described above, but in this example, the alloy thin film obtained by further adding the additive element to the CoMn alloy thin film is replaced as in the case of Example 4. The example used as a binding film was tried. That is, the film layer structure of the magnetoresistive effect film 60 is, as shown in Table 4, Fe (50) [Cu (22) / NiFe (15) / CoM
nTi (50) / Cu (22) / NiFe (15)] 2. That is, as shown in FIG. 8, an Fe film having a film thickness of 50 Å is formed on the surface side of the substrate 61 as an auxiliary film 62 for controlling the crystal structure of the film formed on the upper layer side. 22 Å thick Cu non-magnetic conductive film 67 and 15 Å thick Ni
First magnetic film 64 of Fe and CoMnTi with a film thickness of 50Å
An alloy thin film exchange coupling film 63, a Cu non-magnetic conductive film 65 having a thickness of 22Å, and a NiFe second magnetic film 66 having a thickness of 15Å.
It is an artificial lattice film in which a structure in which the above is sequentially laminated is laminated twice with one lamination period. As is clear from Table 4, in the case of Comparative Examples (1) and (2) in which the exchange coupling film is a CoMn alloy thin film, the heat resistance temperature is 200 ° C to 300 ° C, whereas C
An alloy thin film (CoMnT) obtained by adding Ti to an oMn alloy thin film.
In the case of this example having the exchange coupling membrane of i), the heat resistant temperature was 350 ° C.

Therefore, the heat resistance is improved by using the CoMnTi alloy thin film as the exchange coupling film. The additive element is not limited to Ti, but R is similar to the case of the fourth embodiment.
u, Re, Ir, Pd, Fe, Ni, Cu, Sc,
Y, Zr, Hf, Th, V, Nb, Ta, Pa, Cr,
Mo, W, Tc, Np, Zn, Al, Si, Au, P
At least one element such as t or Ag can be used.

[0067]

[Table 4]

[Embodiment 6] FIG. 9 is a sectional view schematically showing a magnetoresistive effect film of an artificial lattice film in a magnetoresistive element according to Embodiment 6 of the present invention.

In the magnetoresistive effect film 27 of this example, a base film 72 is provided on a substrate 71, and a nonmagnetic conductive film 73 is provided on the base film 72.
The magnetic film 74 and the magnetic film 74 are sequentially and repeatedly laminated, and the protective film 75 is provided thereon. In this example, each thin film 7
Although 1, 72, 73 and 74 were formed by the ion beam sputtering method, the method is not limited to this method, and a general vapor deposition method, a sputtering method or a molecular beam vapor deposition method may be used. The film forming conditions are as follows.

Film forming conditions Argon gas pressure P _Ar = 1.0 × 10 ⁻⁴ Torr Acceleration voltage V _ACC = 0.5 kV Deceleration voltage −200 V Acceleration current I _ACC = 120 mA Substrate rotation 3 rpm Substrate temperature T _SUB <45 ° C. Substrate applied Magnetic field 100-300 Oe Target FeCoCr, FeAl, NiC
o, FeCoCu, Cr, FeMn (Purity> 99.9)
%) For example, in this example, the substrate 71 for forming a thin film is made of glass,
Ceramics such as Al ₂ O ₃ —TiC, magnesium oxide or Si is used. In addition, substrate heating or reverse sputtering may be performed to clean the substrate surface.
In order to increase the flatness of the substrate surface, the base film 72 has a film thickness of 50Å
The above transition metal thin film or transition metal alloy thin film of Cr may be formed. In addition, the flatness of the base film 72 is improved,
In order to clean the surface of the substrate, substrate heating and reverse sputtering or substrate bias application may be performed during film formation. Heat treatment may be further performed after the film formation.

Here, as the magnetic film 74, Fe _{1 -BC is used.}
Cr _B Co _C alloy thin film, Fe _D Al _1-D alloy thin film, Ni
_{An E} Co _1-E alloy thin film, a Fe _F Co _1-F alloy thin film or a Fe _G Ni _1-G alloy thin film is used. These Fe _1-BC
Cr _B Co _C alloy thin film, Fe _D Al _1-D alloy thin film, Ni
_{The E} Co _1-E alloy thin film, the Fe _F Co _1-F alloy thin film or the Fe _G Ni _1-G alloy thin film has a thin film magnetostriction constant of 10 ^-6 or less in the vicinity of the composition shown in Table 5. According to this example,
The rate of change in magnetic resistance can be increased.

[0072]

[Table 5]

Further, for the purpose of improving the magnetic permeability of each magnetic film 74, improving the uniformity of the film structure, and refining the crystal grains, Ti, T
A, Ru, etc. may be added in an amount of 10 [at%] or less. Further, as the non-magnetic conductive film 73, Cu, Cr or CuC is used.
It is effective to use a r-alloy thin film and to use a composition that maximizes the magnetoresistive change rate of the entire film according to the resistivity of the magnetic film 74. The film thickness of the magnetic film 74 and the non-magnetic conductive film 73 is preferably 5 [Å] or more and 200 [Å] or less in order to maintain film flatness. This is because as many magnetic films 74 and nonmagnetic conductive films 73 as possible are provided within the mean free path of the conduction electrons, and many conduction electrons cross the interface of the thin film to increase spin scattering. .

[Seventh Embodiment] FIG. 10 shows a seventh embodiment of the present invention.
FIG. 6 is a cross-sectional view schematically showing a magnetoresistive effect film of an artificial lattice film in the magnetoresistive element according to the present invention.

In the magnetoresistive film 28 of this example, a nonmagnetic conductive film 81, a first magnetic film 82, an exchange coupling film 83, a nonmagnetic conductive film 84 and a second soft magnetic magnetic film 85 are laminated in this order. The above structure is a structure in which two or more cycles are stacked with one cycle structure, and an exchange coupling film 83 for controlling the magnetization of the barrier layer is included. As the exchange coupling film 83, FeMn (manganese / iron), CuMn (manganese / copper), NiMn
(Nickel / manganese), CoMn (cobalt / manganese), PdMn (palladium / manganese) or the like is used. Further, the exchange coupling film 83 may be used by being laminated with a magnetic alloy film such as a NiFe film according to the material of the magnetic film 82. Further, the exchange coupling film 83 has its magnetic films 82, 8
5 is selected so that the rate of change in magnetoresistance of the entire film is maximized. A Fe _G Ni _1-G alloy thin film is used as the second soft magnetic film 85.

The magnetoresistive change rate and the magnetoresistive saturation magnetic field strength of the thus-prepared [magnetic film / nonmagnetic conductive film] laminated film were determined using the lamination method according to the conventional example and the embodiment of the present invention. In the case of, the comparison table is shown in Table 6.

In Table 6, for example, [Cr (5
0) / Fe (20)] 30, a magnetic conductive film Cr having a film thickness of 50Å is formed on the substrate 1, and then a magnetic film Fe having a film thickness of 20Å is sequentially laminated. 1
It is shown that the magnetic multilayer film has a structure in which the lamination period is 30 times. Further, the formed laminated film was heat-treated at a predetermined temperature in a magnetic field for 1 hour, the temperature at which the giant magnetoresistance disappeared was examined, and the temperature was set as the heat resistant temperature. It is desirable that this temperature is as high as possible in order to establish stabilization of element characteristics and improve reliability in use, in consideration of a heat treatment step indispensable for manufacturing a thin film magnetic head.

In Table 6, Comparative Example (1),
(2) and (3) are the cases where the lamination method according to the conventional example is used, and examples (1), (2), (4), (5),
(7), (8), (10), (11), (13), (14),
(16), (17), (19), (20), (22) and (23)
9 is a sample having a laminated structure as shown in FIG. 9, in which the material of the magnetic film / nonmagnetic conductive film and the film thickness thereof are changed. Furthermore, Examples (3), (6), (9), (12), (1
5), (18), (21) and (24) have a laminated structure as shown in FIG. 10, and are non-magnetic conductive film 81 / magnetic film 82 /
Samples in which the materials of the exchange coupling film 83 / nonmagnetic conductive film 84 / magnetic film 85 and the film thickness thereof are changed are shown.

[0079]

[Table 6]

As described above, according to the magnetoresistive films according to the respective examples of the present invention, Fe ₁ -BC having a film thickness of 300 Å or less is used _.
Magnetic film consisting of Cr _B Co _C alloy magnetic thin film, Fe _D Al
_A magnetic film made of a _1-D alloy magnetic film, a magnetic film made of a Ni _E Co _1-E alloy magnetic film, or a magnetic film made of a Fe _F Co _1-F alloy magnetic film, and a non-made film made of Cu, Cr, Cu or CuCr. It has a laminated structure in which magnetic conductive films are alternately laminated two or more times. As shown in Table 6, a high magnetoresistance change rate of 9.5% was obtained as compared with the highest magnetoresistance change rate of 3% in the conventional example, and it was possible to increase the magnetic field sensitivity.

To obtain a good magnetoresistance change rate, F
e _1-BC Cr _B Co _C alloy magnetic thin film composition range is 0.05 <
B <0.15 and 0.50 <C <0.60, composition range of Fe _D Al _1-D alloy magnetic film is 0.75 <D <0.95, composition range of Ni _E Co _1-E alloy magnetic film is 0.70 <E <0.85, Fe _F It was found that the composition range of the Co _{1 -F} alloy magnetic film was 0.65 <F <0.95.

Further, in the magnetoresistive element of the present invention, as shown in each embodiment (1) to (24) of Table 5, the non-magnetic conductive film C is used.
The thickness of u and Cr is adjusted, and the exchange coupling film (F) is used to control the magnetization of the magnetic film of the barrier layer in the artificial lattice film that is the magnetoresistive film.
eMn, CuMn, NiMn, CoMn or PdM
n) is used and a soft magnetic film such as FeNi is used for the other magnetic film, the magnetic film in the artificial lattice film has a relatively small magnetostriction constant (<10 ⁻⁶ ).
By using the CrCo alloy thin film, the FeAl alloy thin film, the NiCo alloy thin film, the FeCo alloy thin film and the FeNi alloy thin film, the magnetoresistance induced by the inverse magnetostriction effect from the stress applied to the film when the magnetostriction constant of the magnetic film is high. It was possible to reduce variations in saturation magnetic field strength (magnetic field sensitivity) and variations in characteristics among mass-produced elements, and to improve magnetic field sensitivity and reliability.

As a result, a sharp magnetic response can be obtained as compared with the conventional example, and the yield rate can be improved. When forming a magnetic film or a non-magnetic conductive film,
By using an ion beam sputtering method or the like, which has a higher film formation rate than molecular beam evaporation, it is possible to reduce the cost required for producing the magnetoresistive effect film.

Further, in the magnetoresistive element of the present invention, the total concentration of Ti and T in the various alloy magnetic thin films is 10 [at%] or less.
Since the case where a and / or Ru (ruthenium) is added is included, it is possible to improve the corrosion resistance and other magnetic characteristics of the magnetoresistive effect film applied to the magnetoresistive thin film magnetic head as compared with the conventional example. Can be planned.

The magnetoresistive effect films of the artificial lattice films in Examples 6 and 7 can be laminated in the layer order shown in FIGS. 2, 4 (a) and 4 (b).

The magnetoresistance change rate is large (several percent or more) and the magnetoresistance saturation magnetic field is small (<100 O compared to the conventional one.
e), high magnetic field sensitivity, and excellent thermal stability (> 30)
It has become possible to construct a magnetoresistive element having a 0 ° C. characteristic.

[Embodiment 8] FIG. 11A is a plan view schematically showing a magnetic induction element according to Embodiment 8 of the present invention.
FIG. 3B is a sectional view schematically showing the magnetic induction element. The magnetic induction element 90 includes a triangular magnetic core 91 and a coil 93. That is, FIG.
As shown in (B), in the magnetic induction element 90, the lower magnetic core 91A, the magnetic gap g, the coil 93, the insulating film 92, the upper magnetic core 91B, and the protective film 9 are provided on the substrate 94.
5 are sequentially provided. Each magnetic core 91A, 91B
As shown in FIG. 12, (91) is a laminated structure in which a soft magnetic thin film 96A and a nonmagnetic thin film 96B are stacked in eight layers (even numbers). Here, the soft magnetic thin film 96A is made of a four-element amorphous alloy of cobalt Co, hafnium Hf, tantalum Ta, and palladium Pd, and the nonmagnetic thin film 96B is made of silicon S.
i, aluminum Al, oxygen O, nitrogen N. The composition ratio of the soft magnetic thin film 96A is Co _(1-XYZ) Hf _X Ta _Y
If Pd _Z , 3.0 ≦ X ≦ 4.0 at%, 4.5 ≦ Y ≦ 5.
5 at%, 1.3 ≦ Z ≦ 2.3 at%. In addition, FIG.
In, the thickness of one layer of the soft magnetic thin film 96A is 1500 to 3000
[Å], and the thickness of one layer of the non-magnetic thin film 96B is 50 to
It is 150 [Å].

FIG. 13 is a characteristic diagram for the composition of the CoHfTaPd alloy film of this example, and FIG. 14 is a characteristic diagram of the relationship between the magnetic permeability and the writing frequency of each composition film of the magnetic core of this example.

Further, FIGS. 15A and 15B are views for explaining the structure of the magnetic domain, and FIGS. 16A to 16C are
It is a perspective view explaining the laminated structure. Note that FIG.
(A) and (B) respectively show the relationship between the one-layer film thickness of each composition film and the domain wall appearance rate.

When forming a magnetic core 91 having a multi-layer structure of a non-magnetic thin film and a soft magnetic thin film as shown in FIG. 12, the soft magnetic thin film 96A is formed by a DC magnetron sputtering method.
The nonmagnetic thin film 96B is formed by applying a magnetic field by the RF magnetron sputtering method to sequentially form both films 96A and 96B.
Are alternately laminated eight times. The film forming conditions are as shown in Table 7.

[0091]

[Table 7]

Further, under the above conditions, the soft magnetic thin film 96
Uniaxial anisotropy is imparted during the film formation of A, and the anisotropic magnetic field is reduced by performing the heat treatment in the rotating magnetic field under the heat treatment conditions of Table 8 to control the magnetic permeability μ.

[0093]

[Table 8]

In the thus formed 8-layer laminated thin film magnetic core 91, the saturation magnetic flux density is Bs = 1.2 T, the high frequency magnetic field is Hc = 0.3 Oe, and the magnetic permeability is μ [10 MHz] =
6000, the magnetostriction is about λs = −0.9 × 10 ⁻⁶ .

Further, as shown in FIG. 13, Co, Hf + T
Saturation magnetic flux density B for 4-element amorphous alloy of a and Pd
s, magnetostriction λs, and processing temperature Tx, the composition range of the quadrilateral shape connected by diagonal lines is Co _(1-XYZ).
Hf _X Ta _Y Pd _Z amorphous alloy single layer film (soft magnetic thin film 96
The optimum value of A) is shown. Note that in FIG. 13, the single-layer film has saturation magnetic flux densities of Bs1 = 1.20, Bs2 = 1.25,
Bs3 = 1.30 [T], magnetostriction λs = 0, processing temperature Tx1 = 350, Tx2 = 375, Tx3 = 400 [° C], and the composition ratio is 3.0 ≦ X. ≤4.0
at%, 4.5 ≤ Y ≤ 5.5 at%, 1.3 ≤ Z ≤ 2.3 at%
Becomes

Non-magnetic thin film SiAlON and soft magnetic thin film Co
The 8-period film of HfTaPd amorphous alloy can be sputtered by simultaneous discharge in the same atmosphere by rotating a holder attached with a substrate in an Ar gas atmosphere and sequentially sputtering each target. Therefore, the film formation time can be shortened to half as compared with the case where SiN is used for the non-magnetic thin film 96B, and the mass productivity thereof can be achieved. Next, the relationship between the magnetic permeability and the frequency of each composition film will be described. FIG. 14 shows characteristics A of each laminated thin film,
It is a characteristic view which compares B and the characteristic C of a single layer film. 14
In, the vertical axis represents the magnetic permeability μ and the horizontal axis represents the frequency. Characteristic A is a frequency characteristic of a laminated film in which a CoHfTaPd amorphous alloy single layer film and a non-magnetic thin film SiAlON are laminated for eight periods. Characteristic B is a frequency characteristic of a laminated film in which a CoHfTaPd amorphous alloy single-layer film and a nonmagnetic thin film SiN are laminated for eight periods. The characteristic C is CoHfT.
It is the frequency characteristic of the aPd amorphous alloy single layer film only. According to this, in the characteristic C of the single-layer film, as shown in FIG. 14, the magnetic permeability μ suddenly decreases from around the frequency of 10 MHz. On the other hand, in the characteristics A and B of the laminated film, μ is constant up to 20 MHz and gradually decreases from 20 MHz. This means that in the high frequency band, the reduction of magnetic permeability can be suppressed in the laminated thin film as compared with the single layer film.

Next, the magnetic domain structure when each composition film is used for the magnetic core will be described. FIG. 15A shows a magnetic domain structure when a single-layer film is used for the magnetic core.
(B) shows the magnetic domain structure when each laminated thin film is used for a magnetic core.

In FIG. 15 (A), CoHfTaPd
When the amorphous alloy single-layer film is patterned into a core shape and its magnetic domain is observed, a domain wall appears on the surface thereof, and the single-layer film has a reflux magnetic domain structure. On the other hand, as shown in FIG. 15B, a CoHfTaPd amorphous alloy single-layer film and a nonmagnetic thin film SiN are laminated for eight periods, or CoHfTaPd is used.
Pd amorphous alloy single layer film and non-magnetic thin film SiAlON 8
In the laminated thin films that are periodically laminated, domain walls generated by the edge curling effect appear in the peripheral portion of the core, and the laminated thin films have a single domain structure. This is because, as shown in FIG. 16A, in the single layer film 200, magnetization is generated on the film surface,
This is because, in the laminated thin film 201, as shown in FIG. 16 (B), an annular path is formed between the thin film layers, the magnetization thereof returns, and the magnetization appearing on the surface decreases.

Further, as shown in FIG. 16C, in the case of the laminated thin film 202 in which the lamination period of the soft magnetic thin film 96A and the nonmagnetic thin film 96B is odd, the domain wall is formed on the core surface as in FIG. 16A. Appears. However, when the total thickness of the magnetic layers is constant, the number of domain walls decreases as the number of layers increases. this is,
This is due to the fact that the number of annular paths between the thin films is increased and the magnetization appearing on the surface is reduced.

Further, as shown in FIG. 16B, when both thin films 96A and 96B are formed into an even number of layers, the magnetization between the film thicknesses is canceled out as a whole, so that the domain wall is hard to appear on the surface. However, when the thickness of one layer of the soft magnetic thin film 96A is thick, the amount of magnetization around the outermost surface thereof increases, and the domain wall becomes slightly likely to appear.

Next, the relationship between the film thickness of one layer of each composition film and the magnetic domain wall appearance rate will be described. FIG. 17A shows CoH.
The appearance rate of the domain wall with respect to the film thickness of one layer of the fTaPd amorphous alloy single layer film is shown. In FIG. 17A, the vertical axis represents the domain wall appearance rate, and the horizontal axis represents CoHfTaPd and the film thickness of one layer. Here, the magnetic domain wall appearance rate means the probability of magnetic domain walls appearing as a result of magnetic domain observation of about 50 magnetic poles in the central portion of the magnetic poles formed on the wafer by colloidal method. For example, when the thickness of one layer of the non-magnetic thin film SiAlON is constant at 100 [Å], the number of layers is eight, and the thickness of one layer of the CoHfTaPd non-crystalline alloy single layer film is changed, FIG.
In the above, in the vicinity of the film thickness of 3000 [Å], the appearance rate of the domain wall is almost 0%, but in the case of the film thickness beyond that, the appearance rate gradually increases. This is because when the thickness of the monolayer film is increased, the magnetic coupling between the thin films is weakened, and like the monolayer film,
This is because the domain wall appears.

When the thickness of one layer of the CoHfTaPd amorphous alloy single layer film is fixed at 1500 [Å], the number of layers is eight, and the thickness of one layer of the nonmagnetic thin film SiAlON is changed, When the film thickness of the thin film SiAlON is 50 Å or less, it becomes a thin island shape. Thereby, CoHfTaPd
The amorphous alloy single layer film cannot be completely separated, and a domain wall appears.

However, in FIG. 17B, when the thickness of one layer of the nonmagnetic thin film SiAlON is 50 [Å] or more, the domain wall appearance rate becomes almost 0%. The vertical axis represents the magnetic domain wall appearance rate, and the horizontal axis represents the thickness of one layer of SiAlON. From this, it is desirable to set the thickness of one layer of the CoHfTaPd amorphous alloy single layer film to 1500 [Å] to 3000 [Å] and the thickness of one layer of the non-magnetic thin film SiAlON to 50 to 150 [Å]. . This film thickness is the thickness at which the nonmagnetic thin film 96B divides the soft magnetic thin film 96A.

In this way, the magnetic cores 91A and 91B are
A soft magnetic thin film 96A having a film thickness of about 1500 to 3000 [Å],
A nonmagnetic thin film 96B having a film thickness of about 50 to 150 [Å] is sequentially stacked to form a laminated structure, and the soft magnetic thin film 96A is made of Co.
_(1-XYZ) Hf _X Ta _Y Pd _Z 4-element amorphous alloy,
The composition ratio is 3.0 ≦ X ≦ 4.0 at%, 4.5 ≦ Y ≦ 5.5a
If t%, 1.3 ≤ Z ≤ 2.3 at% and the non-magnetic thin film 11B is made of Si, Al, O, N, the magnetic cores 96A, 96B can be stably made into a single magnetic domain, and the domain wall motion can be achieved. Can be suppressed as much as possible. Therefore, it is possible to suppress the decrease in the magnetic permeability μ as much as possible, and it is possible to realize a magnetic induction element that can cope with high speed and high density data processing.

Further, since the nonmagnetic thin film 96B can be formed by sputtering in Ar, continuous film formation is possible and the cost of the magnetic induction element can be reduced.

[0106]

As described above, according to the first means of the present invention, in a magnetoresistive element having a single-layer magnetoresistive effect film, the exchange coupling film adjacent to the magnetic film contains C at 50 at.% MnFe.
The alloy is characterized in that u, Ni, Pd or Co is contained at a total additive concentration of 25 at.% or less. Therefore, since the electric resistance value of the exchange coupling film is high, it is difficult for the sense current applied to the magnetoresistive film to be shunted to the exchange coupling film, so that the output voltage change amount increases and the reproduction sensitivity increases. The second means of the present invention is a magnetoresistive element having a magnetoresistive effect film of an artificial lattice film, wherein the exchange coupling film adjacent to the magnetic film has Mn of Cu, Ni, Pd or Co of 25.
It is characterized by being composed of an alloy contained at a total additive concentration of at.% or less. In this artificial lattice film type magnetoresistive element, the electric resistance value ρ of the entire magnetoresistive effect film is decreased, the magnetoresistance change rate is relatively increased, and the reproduction sensitivity is improved. In any of the types, the improvement in reproduction sensitivity makes sense for reproduction of high density recording, and a thin film magnetic head compatible with high density recording / reproduction can be provided.

The third means of the present invention is characterized in that the MnCo alloy thin film is mainly used as the exchange coupling film. Therefore, when the magnetoresistive effect film is a single-layer magnetic film, Good control of the magnetization of the film is possible. Further, when MnCo is used in the artificial lattice film, the magnetoresistance change rate is large, the output of the reproduction signal can be increased, and the magnetoresistive element having high magnetic sensitivity can be obtained. Also, since it is not a FeMn-based alloy, it has high corrosion resistance. In addition, Ru, Re, Ir, Pd,
Fe, Ni, Cu, Sc, Y, Ti, Zr, Hf, T
h, V, Nb, Ta, Pa, Cr, Mo, W, Tc, N
By adding at least one additive element of p, Zn, Al, Si, Au, Pt, and Ag, heat resistance and the like can be further improved. On the other hand, when the magnetoresistive film is an artificial lattice film, the magnetic anisotropy of the magnetic film in the barrier layer can be controlled, and high magnetic sensitivity can be obtained by increasing the magnetoresistance change rate. Further, since an oxidation step is unnecessary, low manufacturing cost can be realized.

Similarly, when an ternary or more alloy thin film containing the above-mentioned additional elements in MnCo is used as the exchange coupling film, heat resistance can be improved.

A fourth means of the present invention is Fe _1-BC C
Magnetic film composed of r _B Co _C alloy magnetic thin film, Fe _D Al
Magnetic film composed of _1-D alloy magnetic film, magnetic film composed of Ni _E Co _1-E alloy magnetic film or magnetic film composed of Fe _F Co _1-F alloy magnetic film, and non-magnetic conduction composed of Cu, Cr or CuCr It is an artificial lattice film in which two or more layers are alternately laminated, and the composition range of the Fe _1-BC Cr _B Co _C alloy magnetic thin film is 0.05 <B <0.15 and 0.50 <C <0.60, Fe _D Al
The composition range of the _1-D alloy magnetic film is 0.75 <D <0.95, Ni _E C
o _1-E alloy magnetic film composition range is 0.70 <E <0.85, Fe _F
It is characterized in that the composition range of the Co _{1 -F} alloy magnetic film is set to 0.65 <F <0.95. This improves the rate of change in magnetic resistance. Furthermore, the total concentration of the above-mentioned various alloy magnetic films is 10
Ti, Ta and / or Ru (ruthenium) of at% or less
When is added, the corrosion resistance can be improved.

In a fifth aspect of the present invention, the magnetic induction element has a magnetic core having a laminated structure in which a soft magnetic thin film and a nonmagnetic thin film are sequentially stacked.
o), hafnium (Hf), tantalum (Ta), palladium (Pd), a non-magnetic thin film formed of a four-element amorphous alloy, and a nonmagnetic thin film made of silicon (Si), aluminum (Al),
It is characterized in that it is formed from oxygen (O) and nitrogen (N). Therefore, the magnetic core in which the soft magnetic thin film and the non-magnetic thin film are stacked an even number of times can have a stable single domain structure and can suppress the domain wall movement as much as possible. This makes it possible to sufficiently secure the magnetic permeability in the high frequency band even when the write operation frequency becomes higher as the data processing becomes faster and the density becomes higher. Also,
Since SiAlON is used, the nonmagnetic thin film can be formed by sputtering in Ar. As a result, the non-magnetic thin film and the soft magnetic thin film can be formed by sputtering in the same atmosphere, which greatly contributes to the provision of a thin film magnetic head having excellent mass productivity and excellent recording / reproducing characteristics.

[Brief description of drawings]

1A is a cross-sectional view schematically showing the structure of a magnetoresistive element according to a first embodiment of the present invention, FIG. 1B is a cross-sectional view schematically showing a layer structure of a modification thereof, and FIG. FIG. 8 is a cross-sectional view schematically showing a layer structure of still another modified example.

FIG. 2 is a sectional view schematically showing the structure of a magnetoresistive element according to Example 2 of the present invention.

3 is a sectional view schematically showing the structure of a magnetoresistive effect film of an artificial lattice film in the magnetoresistive element shown in FIG.

4A is a sectional view schematically showing a modified example of the layer structure shown in FIG. 2, and FIG. 4B is a sectional view schematically showing another modified example of the layer structure shown in FIG. is there.

FIG. 5 is a sectional view schematically showing the layer structure of a magnetoresistive element according to Example 3 of the present invention.

6A is a graph showing changes in the exchange coupling magnetic field (He ₁ ) with respect to the Mn composition ratio (A) of the exchange coupling film in Example 3, and FIG. 6 is a graph showing the holding time dependence of the exchange coupling magnetic field He ₁ under constant temperature and humidity, using a MnCo film and using a MnFe film.

FIG. 7 is a graph showing heat resistance test results when a thin film of FeMn, MnCo, or MnCoRu is used as the exchange coupling film in the magnetoresistive element according to Example 4 of the present invention.

FIG. 8 is a sectional view schematically showing the structure of a magnetoresistive effect film in a magnetoresistive element according to Example 5 of the present invention.

FIG. 9 is a sectional view schematically showing a magnetoresistive effect film of an artificial lattice film in a magnetoresistive element according to Example 6 of the present invention.

FIG. 10 is a sectional view schematically showing a magnetoresistive effect film of an artificial lattice film in a magnetoresistive element according to Example 7 of the present invention.

FIG. 11A is a plan view schematically showing a magnetic induction element according to Example 8 of the present invention, and FIG. 11B is a sectional view schematically showing the magnetic induction element.

FIG. 12 is a cross-sectional view schematically showing a layer structure of a magnetic core in a magnetic induction element according to Example 8.

13 is a characteristic diagram for the composition of the CoHfTaPd alloy film in Example 8. FIG.

FIG. 14 is a graph characteristic diagram showing the relationship between the magnetic permeability of each composition film of the magnetic core and the writing frequency in Example 8.

15A and 15B are schematic diagrams illustrating the structure of magnetic domains of the magnetic core in Example 8. FIG.

16A to 16C are perspective views illustrating a magnetic domain structure associated with a laminated structure of a magnetic core according to an eighth embodiment.

17 (A) and 17 (B) are graphs showing the relationship between the one-layer film thickness of each composition film of the magnetic core and the domain wall appearance rate in Example 8. FIG.

18A is a sectional view showing a schematic configuration of a thin film magnetic head, FIG. 18B is a plan view of the magnetoresistive element, and FIG. 18C is a plan view of the magnetic induction element.

19 (a), (b) and (c) are cross-sectional views schematically showing the layer structure of the magnetoresistive element.

FIG. 20 is a cross-sectional view schematically showing a layer structure when the magnetoresistive film of the magnetoresistive element is an artificial lattice film of a nonmagnetic conductive film and a magnetic film.

21A and 21B are cross-sectional views each schematically showing another layer structure in the case where the magnetoresistive film of the magnetoresistive element is an artificial lattice film of a nonmagnetic conductive film and a magnetic film. .

FIG. 22 is a cross-sectional view schematically showing the layer structure when the magnetoresistive film of the magnetoresistive element is an artificial lattice film having an exchange coupling film.

23 (a) and 23 (b) are schematic cross-sectional views illustrating the magnetoresistive effect when the magnetoresistive film is an artificial lattice film.

FIG. 24 is a schematic diagram illustrating the meaning of a lateral bias film of a magnetoresistive element.

25A is a cross-sectional view showing a magnetic induction element, FIG.
FIG. 4 is a schematic diagram illustrating the structure of magnetic domains of the magnetic core.

[Explanation of symbols]

1, 61, 71 ... Substrate 20, 21, 22, 23, 24, 25, 26 ... Magnetoresistive element 31, 62 ... Auxiliary film 32, 43, 52, 63, 83 ... Exchange coupling film 27, 28, 33, 40 , 51, 65, 67 ... Magnetoresistive effect film 34, 45, 73, 81 ... Non-magnetic conductive film 35 ... Transverse bias film 44, 46, 64, 66, 74, 82, 85 ... Magnetic film 90 ... Magnetic induction element 91 ... magnetic core 96A ... soft magnetic thin film 96B ... non-magnetic thin film g ... magnetic gap.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (31) Priority claim number Japanese Patent Application No. 5-136296 (32) Priority date Hei 5 (1993) June 8 (33) Priority claim country Japan (JP) (31) Priority Claim No. Japanese Patent Application No. 5-175780 (32) Priority Day No. 5 (1993) July 16 (33) Priority claiming country Japan (JP) (31) Priority claim number Japanese Patent Application No. 5-247645 (32) Priority Hihei 5 (1993) October 4 (33) Priority claiming country Japan (JP) (31) Priority claim number Japanese Patent Application No. 5-313875 (32) Priority Sun 5 (1993) December 15 (33) (72) Inventor Osamu Saito 1-1, Tanabe Nitta, Kawasaki-ku, Kawasaki-shi, Kanagawa Fuji Electric Co., Ltd. (72) Yuko Okamura, Tanabe Nitta, Kawasaki-ku, Kawasaki-shi, Kanagawa No. 1 within Fuji Electric Co., Ltd. (72) Inventor Megumi Nagano 1-1 Tanabe Nitta, Kawasaki-ku, Kawasaki-shi, Kanagawa Wealth Electric Co., Ltd. in

Claims (15)

[Claims] 1. A magnetoresistive element having a single-layered magnetoresistive film adjacent to an exchange coupling film on a substrate surface side, wherein the exchange coupling film is Cu, Ni, Pd with respect to MnFe of 50 at.% Mn. A magnetoresistive element comprising an alloy film in which at least one additive selected from the group consisting of and Co is added at a total additive concentration of 25 at.% Or less. 2. An artificial lattice film in which a laminated structure including at least a first magnetic film, a non-magnetic conductive film and a second magnetic film adjacent to an exchange coupling film is laminated on the surface side of a substrate for two or more cycles with one laminated cycle. In the magnetoresistive element having a magnetoresistive effect film made of, the exchange coupling film contains at least one additive selected from the group consisting of Cu, Ni, Pd and Co in an amount of 25 at. A magnetoresistive element, which is an alloy film added in a total concentration. 3. A magnetoresistive element having a magnetoresistive film having a single-layer structure adjacent to an exchange coupling film on the surface side of a substrate, wherein the exchange coupling film is mainly a Mn _A Co _1-A alloy magnetic thin film. consists antiferromagnetic film or ferrimagnetic films, the Mn _A
The composition range of the Co _1-A alloy magnetic thin film is 0.5 <A <0.9.
A magnetoresistive element characterized by satisfying: 4. The magnetoresistive element according to claim 3, wherein the exchange coupling film is formed on the Mn _A Co _1-A alloy magnetic thin film at 30 at. % Or less of the following alloying element X is added: a magnetoresistive element: Ru, Re, Ir,
Pd, Fe, Ni, Cu, Sc, Y, Ti, Zr, H
f, Th, V, Nb, Ta, Pa, Cr, Mo, W, T
An alloying element X consisting of at least one element selected from the group consisting of c, Np, Zn, Al, Si, Au, Pt and Ag. 5. An artificial lattice film in which a laminated structure including at least a first magnetic film, a non-magnetic conductive film and a second magnetic film adjacent to an exchange coupling film is laminated on the surface side of a substrate for two or more cycles with one laminated cycle. In the magnetoresistive element having a magnetoresistive effect film made of, the exchange coupling film is an antiferromagnetic film or a ferrimagnetic film mainly composed of an MnCo alloy magnetic thin film. 6. The magnetoresistive element according to claim 5, wherein the exchange coupling film is formed by adding the following alloying element X to the MnCo alloy magnetic thin film: Ru, Re. , Ir, Pd, Fe, Ni, Cu, S
c, Y, Ti, Zr, Hf, Th, V, Nb, Ta, P
a, Cr, Mo, W, Tc, Np, Zn, Al, Si,
An alloying element X consisting of at least one element selected from the group consisting of Au, Pt and Ag. 7. A magnetoresistive element having, on the surface side of a substrate, a magnetoresistive effect film made of an artificial lattice film in which a laminated structure containing at least a magnetic film and a non-magnetic conductive film is laminated for two cycles or more, wherein The magnetic film is composed of a Fe _1-BC Cr _B Co _C alloy magnetic thin film, and the non-magnetic conductive film is Cu, Cr or CuCr.
From made, the Fe _1-BC Cr _B Co _C alloy magnetoresistive element composition range of the magnetic thin film, characterized by satisfying the 0.05 <B <0.15 and 0.50 <C <0.60. 8. The magnetoresistive element according to claim 7, wherein the magnetic film is an Fe _D Al _{1 -D} alloy magnetic film in place of the Fe _{1 -BC} Cr _B Co _C alloy magnetic thin film.
The composition range of the Fe _D Al _1-D alloy magnetic film is 0.75 <D
A magnetoresistive element characterized by satisfying <0.95. The magnetoresistance element according to claim 9 according to claim 7, wherein the magnetic film, the place of the Fe _1-BC Cr _B Co _C alloy magnetic thin film made of Ni _E Co _1-E alloy magnetic film,
The composition range of the Ni _E Co _1-E alloy magnetic film is 0.70 <E.
A magnetoresistive element characterized by satisfying <0.85. 10. The magnetoresistive element according to claim 7, wherein the magnetic film is made of an Fe _F Co _1-F alloy magnetic film in place of the Fe _1-BC Cr _B Co _C alloy magnetic thin film,
The composition range of the Fe _F Co _1-F alloy magnetic film is 0.65 <F
A magnetoresistive element characterized by satisfying <0.95. 11. The magnetoresistive element according to claim 7, wherein the alloy magnetic film has a T content.
A magnetoresistive element comprising i, Ta and / or Ru added in a total concentration of 10 [at%] or less. 12. A magnetic induction element comprising a magnetic core having a magnetic gap, wherein the magnetic core has a laminated structure in which a soft magnetic thin film and a nonmagnetic thin film are sequentially stacked, and the soft magnetic thin film comprises: Cobalt (Co), Hafnium (H
f), a tantalum (Ta), and a palladium (Pd) four-element amorphous alloy, and the non-magnetic thin film is composed of silicon (Si), aluminum (Al), oxygen (O), and nitrogen (N). A magnetic induction element characterized by. 13. The magnetic induction device according to claim 12, wherein the composition ratio of cobalt (Co), hafnium (Hf), tantalum (Ta), and palladium (Pd) of the soft magnetic thin film is Co _(1-XYZ). If Hf _X Ta _Y Pd _Z ,
3.0 ≦ X ≦ 4.0at%, 4.5 ≦ Y ≦ 5.5at%, 1.3 ≦
A magnetic induction element, wherein Z ≦ 2.3 at%. 14. The magnetic induction element according to claim 12, wherein the soft magnetic thin film has a thickness of 15 layers.
00-3000 [Å], the thickness of one layer of the non-magnetic thin film is 50-150 [Å], and the number of laminated layers of the soft magnetic thin film and the non-magnetic thin film is an even number. Inductive element. 15. A magnetoresistive element as defined in any one of claims 1 to 11, and claims 12 to 1.
4. A thin-film magnetic head, characterized by being laminated with the magnetic induction element defined in any one of 4 above.