JPH07221108A - Electrode structure of semiconductor device and method of forming the electrode - Google Patents
Electrode structure of semiconductor device and method of forming the electrodeInfo
- Publication number
- JPH07221108A JPH07221108A JP2908994A JP2908994A JPH07221108A JP H07221108 A JPH07221108 A JP H07221108A JP 2908994 A JP2908994 A JP 2908994A JP 2908994 A JP2908994 A JP 2908994A JP H07221108 A JPH07221108 A JP H07221108A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- organic film
- forming
- film
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 25
- 239000004642 Polyimide Substances 0.000 claims abstract description 24
- 229920001721 polyimide Polymers 0.000 claims abstract description 24
- 239000011368 organic material Substances 0.000 claims abstract description 22
- 239000011810 insulating material Substances 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 230000001131 transforming effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 22
- 229910052782 aluminium Inorganic materials 0.000 abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 18
- 238000002161 passivation Methods 0.000 abstract description 11
- 238000009713 electroplating Methods 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 7
- 238000000059 patterning Methods 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 66
- 238000007747 plating Methods 0.000 description 32
- 239000010410 layer Substances 0.000 description 27
- 239000010953 base metal Substances 0.000 description 10
- 239000007769 metal material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
(57)【要約】
【目的】 半導体装置において、電極形成が技術的に困
難なウェット方式の電解メッキ法を用いず、完全ドライ
方式で電極を形成することができるようにする。
【構成】 基板１のアルミ電極３およびパッシベーショ
ン膜４の上に、ポリイミド等の有機材料の絶縁物質によ
り有機膜５を形成して、アルミ電極３の上方部だけ残る
ようにパターンニングすることで、有機膜突起６を形成
する。次いで、この有機膜突起６に酸素ラジカル等の高
エネルギー粒子７を照射して、少なくとも一部がアモル
ファス化されてアモルファスカーボン状態の導電性物質
（変質層８）に変質した導電性有機膜電極９を形成す
る。
(57) [Summary] [Object] In a semiconductor device, an electrode can be formed by a completely dry method without using a wet-type electrolytic plating method, which is technically difficult to form an electrode. [Structure] By forming an organic film 5 on the aluminum electrode 3 and the passivation film 4 of the substrate 1 with an insulating material of an organic material such as polyimide, and patterning so that only the upper portion of the aluminum electrode 3 remains. The organic film protrusion 6 is formed. Next, the organic film projections 6 are irradiated with high-energy particles 7 such as oxygen radicals, and at least a part of them are amorphized to form a conductive substance (modified layer 8) in an amorphous carbon state. To form.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板に形成する
バンプ電極等の半導体装置の電極構造と、その電極形成
方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode structure of a semiconductor device such as a bump electrode formed on a semiconductor substrate and a method for forming the electrode.
【０００２】[0002]
【従来の技術】例えば、半導体基板（以下、単に基板と
呼ぶ）にバンプ電極を形成する場合、基板のバンプ電極
形成面にメッキレジスト層を形成し、このメッキレジス
ト層をエッチングして開口を形成することにより、この
開口からパッド部を露出させ、その露出したパッド部に
メッキ装置を用いて金等のメッキを施し、その施したメ
ッキによってバンプ電極を形成している。2. Description of the Related Art For example, when a bump electrode is formed on a semiconductor substrate (hereinafter simply referred to as a substrate), a plating resist layer is formed on the bump electrode forming surface of the substrate, and the plating resist layer is etched to form an opening. By doing so, the pad portion is exposed from this opening, the exposed pad portion is plated with gold or the like by using a plating device, and the bump electrode is formed by the plated plating.
【０００３】図３（ａ）〜（ｅ）はこのような基板にバ
ンプ電極を形成する従来の電極形成方法を示したもので
ある。先ず、図３（ａ）に示すように、基板３１に酸化
シリコンからなる酸化膜３２を介してアルミ電極３３が
形成されており、アルミ電極３３の周囲はパッシベーシ
ョン膜３４により覆われている。このパッシベーション
膜３４は酸化シリコンまたは窒化シリコンからなる絶縁
膜による保護膜である。3 (a) to 3 (e) show a conventional electrode forming method for forming bump electrodes on such a substrate. First, as shown in FIG. 3A, an aluminum electrode 33 is formed on a substrate 31 via an oxide film 32 made of silicon oxide, and the periphery of the aluminum electrode 33 is covered with a passivation film 34. The passivation film 34 is a protective film made of an insulating film made of silicon oxide or silicon nitride.
【０００４】そして、この電極形成方法では、図３
（ｂ）に示すように、アルミ電極３３およびパッシベー
ション膜３４の上に、後述するメッキ処理時におけるメ
ッキ電流の通電のための下地金属層３５を真空蒸着法、
スパッター等の薄膜形成方法により形成する。この下地
金属層３５の構造は、図示しないが詳細には、２層また
は３層構造がある。Then, according to this electrode forming method, as shown in FIG.
As shown in (b), on the aluminum electrode 33 and the passivation film 34, a base metal layer 35 for conducting a plating current during a plating process described later is formed by a vacuum deposition method,
It is formed by a thin film forming method such as spatter. Although not shown, the structure of the base metal layer 35 has a two-layer or three-layer structure in detail.
【０００５】なお、この２層または３層構造による下地
金属層３５において、各々の層構造の１層目（アルミ電
極３３側から）の接着層は、アルミ電極３３およびパッ
シベーション膜３４との接着の役目をしており、その使
用される金属材料には、Ｃｒ，Ｔｉ，ＴｉとＷとの合金
等の材料が用いられる。また、２層目のバリア層は、ア
ルミとバンプ電極に用いられる金属材料の相互拡散を防
止または遅延させるために用いられるもので、その使用
される金属材料には、Ｐｔ，Ｐｄ，Ｃｕ，Ｎｉ等の材料
が用いられる。さらに、３層目として、２層目のバリア
層の表面酸化防止の目的や、電極形成方法のバンプメッ
キにおいて良好な剪断強度を維持するために用いられる
場合があり、Ａｕ等の材料が５００〜２０００Å程度の
層厚で用いられる。In the base metal layer 35 having the two-layer structure or the three-layer structure, the first adhesive layer (from the aluminum electrode 33 side) of each layer structure adheres to the aluminum electrode 33 and the passivation film 34. It plays a role, and a material such as Cr, Ti, an alloy of Ti and W is used as the metal material used. The second barrier layer is used to prevent or delay the mutual diffusion of aluminum and the metal material used for the bump electrode, and the metal material used is Pt, Pd, Cu, Ni. Material such as is used. Further, as a third layer, it may be used for the purpose of preventing surface oxidation of the second barrier layer and for maintaining good shear strength in bump plating of the electrode forming method. It is used with a layer thickness of about 2000Å.
【０００６】次に、以上の下地金属層３５の表面に、メ
ッキレジストをスピンコート法等の方法を用いて塗布
し、既知のように、図示しないガラスマスクを用いて露
光、現像を実施してパターンニングを行い、図３（ｃ）
に示すように、メッキレジスト層３６および所定のレジ
スト開口部３７を形成する。Next, a plating resist is applied to the surface of the above-mentioned base metal layer 35 by a method such as a spin coat method, and as known, exposure and development are carried out using a glass mask (not shown). After patterning, see Fig. 3 (c).
As shown in FIG. 3, a plating resist layer 36 and a predetermined resist opening 37 are formed.
【０００７】次に、図３（ｄ）に示すように、基板３１
をフェイスダウン（基板３１の表面を下に向ける）に
し、既知のように、図示しないバンプメッキカップに設
置して、メッキ処理を行う。このメッキ処理により、レ
ジスト開口部３７に電極金属材料（金または半田）３８
が析出する。この電極金属材料３８の厚みは１５〜２５
μｍ程度である。Next, as shown in FIG. 3D, the substrate 31
Face down (the surface of the substrate 31 faces downward), and the plate is placed in a bump plating cup (not shown), as is known, and a plating process is performed. By this plating treatment, an electrode metal material (gold or solder) 38 is formed in the resist opening 37.
Is deposited. The thickness of this electrode metal material 38 is 15 to 25.
It is about μm.
【０００８】次に、メッキレジスト層３６および下地金
属層３５を、既知のように、エッチング等により次々に
除去することで、図３（ｅ）に示したように、バンプ電
極３９を形成する。このように、バンプ電極３９の形成
方法は、ウェット方法であるメッキ液を用いた電解メッ
キ法であった。Next, the plating resist layer 36 and the base metal layer 35 are sequentially removed by etching or the like, as is known, to form bump electrodes 39 as shown in FIG. 3 (e). As described above, the method of forming the bump electrode 39 was an electrolytic plating method using a plating solution which is a wet method.
【０００９】[0009]
【発明が解決しようとする課題】以上のように、ウェッ
ト方法である電解メッキ法によるバンプ電極３９の形成
方法では、メッキ液の管理が非常に難しい。即ち、基板
３１がその表面を下に向けてメッキカップにセットされ
るため、メッキ液を噴き上げた際、基板３１の表面やレ
ジスト開口部３７にメッキ液中の気泡（エアー）が溜っ
てしまい、安定してバンプメッキをすることができな
い。また、メッキ金属の電解析出中の電気化学反応にお
いて発生するガスもレジスト開口部３７や基板３１表面
に溜り、バンプメッキの形成を妨げてしまう。As described above, in the method of forming the bump electrode 39 by the electrolytic plating method which is a wet method, it is very difficult to control the plating solution. That is, since the substrate 31 is set in the plating cup with its surface facing downward, when the plating liquid is sprayed, bubbles (air) in the plating liquid accumulate on the surface of the substrate 31 and the resist opening 37, Bump plating cannot be performed stably. Further, the gas generated in the electrochemical reaction during the electrolytic deposition of the plating metal also collects on the resist opening 37 and the surface of the substrate 31 and hinders the formation of bump plating.
【００１０】従って、メッキ液中の気泡により電極外観
不良が発生し、製品の歩留まりが低い、電極表面状態が
安定しない、電極硬度が安定しない、電極高さバラツキ
が大きい等の欠点が発生し、メッキ方法による均一な電
極形成は技術的に困難なものであった。Therefore, the appearance of the electrode is poor due to the bubbles in the plating solution, and the defects such as low product yield, unstable electrode surface condition, unstable electrode hardness, and large variation in electrode height occur. It was technically difficult to form a uniform electrode by the plating method.
【００１１】そこで、本発明の目的は、半導体装置にお
いて、ウェット方式の電解メッキ法を用いず、完全ドラ
イ方式で電極を形成することができる電極構造を提供す
るとともに、その電極形成方法を提供することにある。Therefore, an object of the present invention is to provide an electrode structure capable of forming an electrode in a complete dry system without using a wet system electrolytic plating method in a semiconductor device, and to provide an electrode forming method therefor. Especially.
【００１２】[0012]
【課題を解決するための手段】以上の課題を解決すべく
請求項１記載の発明は、半導体装置の電極構造であっ
て、有機材料の絶縁物質を高エネルギー粒子により導電
性物質に変質させた導電性有機膜からなる突起電極を備
えた構成を特徴としている。In order to solve the above problems, the invention according to claim 1 is an electrode structure of a semiconductor device, wherein an insulating material of an organic material is transformed into a conductive material by high energy particles. It is characterized by a configuration including a protruding electrode made of a conductive organic film.
【００１３】そして、請求項２記載の発明は、請求項１
記載の発明において、前記有機材料はポリイミドで、前
記高エネルギー粒子はラジカルであり、このラジカルの
照射により前記ポリイミドによる有機膜の少なくとも一
部をアモルファス化して導電性を具備させるようにした
ことを特徴としている。The invention according to claim 2 is based on claim 1.
In the invention described above, the organic material is a polyimide, the high-energy particles are radicals, and by irradiation of the radicals, at least a part of the organic film formed by the polyimide is made amorphous so as to have conductivity. I am trying.
【００１４】また、請求項３記載の発明は、半導体装置
の電極形成方法であって、有機材料の絶縁物質により有
機膜を形成し、次いで、この有機膜に高エネルギー粒子
を照射して、導電性物質に変質した導電性有機膜からな
る突起電極を形成することを特徴としている。According to a third aspect of the present invention, there is provided an electrode forming method for a semiconductor device, wherein an organic film is formed by an insulating material of an organic material, and then the organic film is irradiated with high-energy particles to conduct electricity. The present invention is characterized in that a protruding electrode formed of a conductive organic film that has been transformed into a conductive substance is formed.
【００１５】さらに、請求項４記載の発明は、請求項３
記載の発明において、前記有機材料はポリイミドで、前
記高エネルギー粒子はラジカルであり、このラジカルの
照射により前記ポリイミドによる有機膜の少なくとも一
部をアモルファス化させて導電性を具備させるようにし
たことを特徴としている。Further, the invention of claim 4 is the same as that of claim 3.
In the invention described above, the organic material is a polyimide, the high-energy particles are radicals, by irradiation of the radicals at least a portion of the organic film by the polyimide is made to be amorphous to have conductivity. It has a feature.
【００１６】[0016]
【作用】請求項１記載の発明によれば、有機材料の絶縁
物質を高エネルギー粒子により導電性物質に変質させた
導電性有機膜からなる突起電極であるので、従来のよう
なウェット方式の電解メッキ法を用いずに、下地金属層
も形成せずに、完全ドライ方式で電極を形成できる。従
って、従来のような気泡による電極外観不良やメッキ液
管理の問題は根本的になくなる。According to the first aspect of the present invention, since it is a protruding electrode formed of a conductive organic film in which an insulating material of an organic material is transformed into a conductive material by high-energy particles, a conventional wet system electrolysis is used. The electrodes can be formed by a completely dry method without using a plating method and without forming a base metal layer. Therefore, the problems of the electrode appearance defect and the plating solution management, which are caused by the air bubbles, as in the conventional case, are basically eliminated.
【００１７】そして、請求項２記載の発明によれば、有
機材料をポリイミド、高エネルギー粒子をラジカルとし
たことにより、ラジカルの照射によりポリイミドによる
有機膜の少なくとも一部をアモルファス化させて、導電
性を具備させることによって、導電性有機膜からなる突
起電極が得られる。According to the second aspect of the present invention, the organic material is polyimide and the high-energy particles are radicals. By radiating the radicals, at least a part of the organic film formed by the polyimide is made amorphous, and the conductivity is improved. By including the above, a protruding electrode made of a conductive organic film can be obtained.
【００１８】また、請求項３記載の発明によれば、有機
材料の絶縁物質により形成した有機膜に高エネルギー粒
子を照射して、導電性物質に変質した導電性有機膜から
なる突起電極を形成したので、従来のようなウェット方
式の電解メッキ法を用いずに、下地金属層も形成せず
に、完全ドライ方式で電極を形成できる。従って、従来
のような気泡による電極外観不良やメッキ液管理の問題
は根本的になくなる。According to the third aspect of the present invention, the organic film formed of the insulating material of the organic material is irradiated with high-energy particles to form the protruding electrode formed of the conductive organic film transformed into the conductive material. Therefore, the electrodes can be formed by a complete dry method without using a conventional wet type electrolytic plating method and without forming a base metal layer. Therefore, the problems of the electrode appearance defect and the plating solution management, which are caused by the air bubbles, as in the conventional case, are basically eliminated.
【００１９】さらに、請求項４記載の発明によれば、有
機材料をポリイミド、高エネルギー粒子をラジカルとし
たことにより、ラジカルの照射によりポリイミドによる
有機膜の少なくとも一部をアモルファス化して、導電性
を具備させることによって、導電性有機膜からなる突起
電極を形成できる。Further, according to the invention of claim 4, the organic material is polyimide and the high-energy particles are radicals, so that at least a part of the organic film made of polyimide is made amorphous by irradiation of the radicals, and conductivity is improved. By including it, a protruding electrode made of a conductive organic film can be formed.
【００２０】[0020]
【実施例】以下に、本発明に係る半導体装置の電極構造
およびその電極形成方法の実施例を図１および図２に基
づいて説明する。Embodiments of an electrode structure of a semiconductor device and a method of forming the electrode according to the present invention will be described below with reference to FIGS. 1 and 2.
【００２１】先ず、図１（ａ）〜（ｅ）は基板にバンプ
電極を形成する本発明による電極形成方法を示したもの
で、１は基板、２は酸化膜、３はアルミ電極、４はパッ
シベーション膜、５は有機膜、６は有機膜突起、７は高
エネルギー粒子、８は変質層、９は導電性有機膜電極
（突起電極）である。First, FIGS. 1A to 1E show an electrode forming method according to the present invention for forming bump electrodes on a substrate. 1 is a substrate, 2 is an oxide film, 3 is an aluminum electrode, and 4 is an aluminum electrode. A passivation film, 5 is an organic film, 6 is an organic film protrusion, 7 is high-energy particles, 8 is an altered layer, and 9 is a conductive organic film electrode (projection electrode).
【００２２】図１（ａ）に示すように、基板１には、従
来と同様に、酸化シリコンからなる酸化膜２を介してア
ルミ電極３が形成されており、このアルミ電極３の周囲
は、酸化シリコンまたは窒化シリコンからなる絶縁膜に
よる保護膜であるパッシベーション膜４により覆われて
いる。As shown in FIG. 1 (a), an aluminum electrode 3 is formed on a substrate 1 through an oxide film 2 made of silicon oxide as in the conventional case, and the periphery of the aluminum electrode 3 is It is covered with a passivation film 4 which is a protective film made of an insulating film made of silicon oxide or silicon nitride.
【００２３】そして、本発明による電極形成方法では、
以上の基板１の表面に、特に、ポリイミド等の有機膜５
を塗布し、この有機膜５がアルミ電極３上部だけに残る
ようにパターンニングする。In the electrode forming method according to the present invention,
On the surface of the substrate 1 described above, an organic film 5 such as polyimide is formed.
Is applied, and patterning is performed so that the organic film 5 remains only above the aluminum electrode 3.
【００２４】即ち、図１（ｂ）に示すように、基板１表
面のアルミ電極３およびパッシベーション膜４の上に、
絶縁性を有する有機材料をスピンコート法またはロール
コート法により塗布して、膜厚が１５〜２５μｍ程度の
有機膜５を形成する。この有機膜５は、感光性のもので
も非感光性のものでも構わないが、実施例では、感光性
有機材料のポリイミドを用いている。That is, as shown in FIG. 1B, on the aluminum electrode 3 and the passivation film 4 on the surface of the substrate 1,
An organic material having an insulating property is applied by a spin coating method or a roll coating method to form an organic film 5 having a film thickness of about 15 to 25 μm. The organic film 5 may be photosensitive or non-photosensitive, but in the embodiment, a photosensitive organic material polyimide is used.
【００２５】次に、以上の有機膜５の表面に、図示しな
いガラスマスクを用いて露光、現像を実施してパターン
ニングを行い、図１（ｃ）に示すように、絶縁性の有機
膜突起６を形成する。Next, the surface of the above organic film 5 is exposed and developed using a glass mask (not shown) to perform patterning, and as shown in FIG. 1 (c), an insulating organic film protrusion is formed. 6 is formed.
【００２６】次に、図１（ｄ）に示すように、この状態
で基板１の表面に高エネルギー粒子７を照射する。この
高エネルギー粒子７は、例えば、アルゴン（Ａｒ）等の
原子、酸素のプラズマ状態により得られる酸素ラジカル
（Ｏ+）や電子等の荷電粒子等であり、具体的には、真
空中で電界を印加することによって、特に、有機膜突起
６の表面に照射する。なお、この高エネルギー粒子７を
照射する前までは、有機膜突起６は絶縁性を示してい
る。Next, as shown in FIG. 1D, the surface of the substrate 1 is irradiated with high-energy particles 7 in this state. The high-energy particles 7 are, for example, atoms such as argon (Ar), charged particles such as oxygen radicals (O + ) and electrons obtained by a plasma state of oxygen, and specifically, an electric field in a vacuum. By applying, in particular, the surface of the organic film protrusion 6 is irradiated. It should be noted that the organic film protrusions 6 have an insulating property before being irradiated with the high energy particles 7.
【００２７】このように、有機膜突起６の表面に高エネ
ルギー粒子７を照射することによって、有機膜突起６
は、その表面から化学反応により導電性を有する変質層
８に変質していき、図１（ｅ）に示すように、導電性有
機膜電極９となる。なお、この導電性有機膜電極９の厚
みは上述した膜厚と同様に１５〜２５μｍ程度となる。By irradiating the surface of the organic film projection 6 with the high-energy particles 7 in this way, the organic film projection 6 is formed.
Changes from its surface to a deteriorated layer 8 having conductivity by a chemical reaction, and becomes a conductive organic film electrode 9 as shown in FIG. 1 (e). The conductive organic film electrode 9 has a thickness of about 15 to 25 μm, similar to the film thickness described above.
【００２８】ここで、絶縁性の有機膜突起６に高エネル
ギー粒子７を照射することにより、導電性有機膜電極９
に変質することについて、ポリイミドにＯ+を照射した
場合で説明する。Here, by irradiating the insulating organic film projections 6 with the high-energy particles 7, the conductive organic film electrode 9 is formed.
Degradation of the polyimide will be described by irradiating the polyimide with O + .
【００２９】先ず、〔化１〕に示すように、ポリイミド
は化学式（Ｉ）で表される。このポリイミドにＯ+を照
射すると、Ｏ+のエネルギーによってポリイミド構造に
おける結合力の弱い部分が切断される。即ち、図２に示
すように、ポリイミドは、水酸基と、炭素基（Ａ）また
はエステル基（Ｂ）またはアミノ基（Ｃ）に分解し、残
りの部分がアモルファス化されてアモルファスカーボン
状態に変質し、導電性を示すようになる。First, as shown in [Chemical Formula 1], polyimide is represented by the chemical formula (I). Upon irradiation with O + to the polyimide, O + weak bonding force in the polyimide structure by the energy of is disconnected. That is, as shown in FIG. 2, the polyimide is decomposed into a hydroxyl group and a carbon group (A), an ester group (B) or an amino group (C), and the remaining portion is amorphized to be changed into an amorphous carbon state. , Becomes conductive.
【００３０】従って、基板１のアルミ電極３上に導電性
有機膜電極９を形成することができて、これによりバン
プ電極を形成することができる。Therefore, the conductive organic film electrode 9 can be formed on the aluminum electrode 3 of the substrate 1, and thus the bump electrode can be formed.
【００３１】以上の通り、本発明による電極形成方法に
よれば、全プロセスをドライ方式で対応することができ
るため、従来のウェット方式の電解メッキ法によるよう
な下地金属層が不要となり、メッキ液中の気泡による電
極外観不良やメッキ液管理の問題を根本的になくすこと
ができる。As described above, according to the electrode forming method of the present invention, since the whole process can be performed by the dry method, the underlying metal layer unlike the conventional wet type electrolytic plating method is not necessary, and the plating solution is used. It is possible to fundamentally eliminate the problems of poor electrode appearance and plating liquid management due to air bubbles inside.
【００３２】そして、以下に列挙する利点を得ることが
できる。プロセスの単純化のため、コストダウンが図
れる。使用材料が高価でないため、コストダウンが図
れる。バンプ電極高さのバラツキが従来より１／２〜
１／３程度に向上する。気泡の影響が全くない。The advantages listed below can be obtained. Cost can be reduced due to the simplification of the process. Since the materials used are not expensive, the cost can be reduced. The variation of bump electrode height is 1/2 or more
It is improved to about 1/3. There is no effect of bubbles.
【００３３】なお、以上の実施例においては、バンプ電
極を形成する有機材料としてポリイミドを挙げたが、本
発明はこれのみに限定されるものではなく、高エネルギ
ー粒子の照射により導電性物質に変質する他の有機材料
による絶縁物質であってもよい。また、その他、具体的
な細部構造等についても適宜に変更可能であることは勿
論である。In the above embodiments, polyimide was used as the organic material for forming the bump electrodes, but the present invention is not limited to this, and the material is transformed into a conductive substance by irradiation with high energy particles. It may be an insulating substance made of another organic material. In addition, it is needless to say that the specific detailed structure and the like can be appropriately changed.
【００３４】[0034]
【発明の効果】以上のように、請求項１記載の発明に係
る半導体装置の電極構造によれば、有機材料の絶縁物質
を高エネルギー粒子により導電性物質に変質させた導電
性有機膜からなる突起電極を形成したため、従来のよう
なウェット方式の電解メッキ法を用いずに、下地金属層
も形成せずに、完全ドライ方式で有機材料により電極を
形成することができる。従って、従来のような気泡によ
る電極外観不良やメッキ液管理の問題は根本的になくす
ことができる。As described above, according to the electrode structure of the semiconductor device according to the first aspect of the present invention, it is composed of the conductive organic film in which the insulating material of the organic material is transformed into the conductive material by the high energy particles. Since the protruding electrodes are formed, the electrodes can be formed of an organic material by a complete dry method without using a conventional wet electrolytic plating method and without forming a base metal layer. Therefore, it is possible to fundamentally eliminate the problems of the poor electrode appearance and the control of the plating solution, which are caused by the bubbles.
【００３５】そして、請求項２記載の発明に係る半導体
装置の電極構造によれば、ラジカルの照射によりポリイ
ミドによる有機膜の少なくとも一部をアモルファス化さ
せて、導電性を具備させることによって、導電性有機膜
からなる突起電極を得ることができる。According to the electrode structure of the semiconductor device of the second aspect of the present invention, by irradiating radicals, at least a part of the organic film made of polyimide is made amorphous so that the organic film has conductivity. A protruding electrode made of an organic film can be obtained.
【００３６】また、請求項３記載の発明に係る半導体装
置の電極形成方法によれば、有機材料の絶縁物質により
形成した有機膜に高エネルギー粒子を照射して、導電性
物質に変質した導電性有機膜からなる突起電極を形成す
るようにしたため、従来のようなウェット方式の電解メ
ッキ法を用いずに、下地金属層も形成せずに、完全ドラ
イ方式で有機材料により電極を形成することができる。
従って、従来のような気泡による電極外観不良やメッキ
液管理の問題を根本的になくすことができる。According to the electrode forming method of the semiconductor device according to the third aspect of the invention, the organic film formed of the insulating material of the organic material is irradiated with high energy particles, and the conductive material is transformed into a conductive material. Since the protruding electrode made of an organic film is formed, it is possible to form an electrode using an organic material in a completely dry method without forming a base metal layer without using a conventional wet electrolytic plating method. it can.
Therefore, it is possible to fundamentally eliminate the problems of the poor electrode appearance and the control of the plating solution, which are caused by the bubbles.
【００３７】さらに、請求項４記載の発明に係る半導体
装置の電極形成方法によれば、ラジカルの照射によりポ
リイミドによる有機膜の少なくとも一部をアモルファス
化して、導電性を具備させることによって、導電性有機
膜からなる突起電極を形成することができる。Further, according to the method of forming an electrode of a semiconductor device according to the invention of claim 4, at least a part of the organic film made of polyimide is made amorphous by irradiation of radicals so as to have conductivity, and thus the conductivity is improved. A protruding electrode made of an organic film can be formed.
【図１】基板にバンプ電極を形成する本発明による電極
形成方法を示したもので、（ａ）はアルミ電極およびパ
ッシベーション膜の形成工程を示す断面図、（ｂ）は有
機膜の塗布工程を示す断面図、（ｃ）は有機膜のパター
ンニング工程を示す断面図、（ｄ）は高エネルギー粒子
の照射工程を示す断面図、（ｅ）は導電性有機膜電極を
示す断面図である。1A and 1B show an electrode forming method according to the present invention for forming bump electrodes on a substrate, wherein FIG. 1A is a sectional view showing a step of forming an aluminum electrode and a passivation film, and FIG. 1B is a step of applying an organic film. Sectional drawing which shows, (c) is sectional drawing which shows the patterning process of an organic film, (d) is sectional drawing which shows the irradiation process of high energy particles, (e) is sectional drawing which shows a conductive organic film electrode.
【図２】有機膜の変質を説明する概要図である。FIG. 2 is a schematic diagram illustrating alteration of an organic film.
【図３】基板にバンプ電極を形成する従来の電極形成方
法を示したもので、（ａ）はアルミ電極およびパッシベ
ーション膜の形成工程を示す断面図、（ｂ）は下地金属
層の形成工程を示す断面図、（ｃ）はメッキレジストの
パターンニング工程を示す断面図、（ｄ）はバンプメッ
キ工程を示す断面図、（ｅ）はバンプ電極を示す断面図
である。3A and 3B show a conventional electrode forming method for forming bump electrodes on a substrate, wherein FIG. 3A is a sectional view showing a forming process of an aluminum electrode and a passivation film, and FIG. 3B is a forming process of a base metal layer. FIG. 4C is a sectional view showing a plating resist patterning step, FIG. 7D is a sectional view showing a bump plating step, and FIG. 8E is a sectional view showing bump electrodes.
１ 基板 ２ 酸化膜 ３ アルミ電極 ４ パッシベーション膜 ５ 有機膜 ６ 有機膜突起 ７ 高エネルギー粒子 ８ 変質層 ９ 導電性有機膜電極（突起電極） 1 substrate 2 oxide film 3 aluminum electrode 4 passivation film 5 organic film 6 organic film protrusion 7 high energy particles 8 altered layer 9 conductive organic film electrode (projection electrode)
【化１】 [Chemical 1]
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/92 Ｆ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication H01L 21/92 F
Claims (4)
質に変質させた導電性有機膜からなる突起電極を備えた
ことを特徴とする半導体装置の電極構造。1. An electrode structure of a semiconductor device, comprising a protruding electrode formed of a conductive organic film obtained by transforming an insulating material of an organic material into a conductive material by high-energy particles. Electrode structure.
ネルギー粒子はラジカルであり、 このラジカルの照射により前記ポリイミドによる有機膜
の少なくとも一部をアモルファス化して導電性を具備さ
せたことを特徴とする請求項１記載の半導体装置の電極
構造。2. The organic material is polyimide, the high-energy particles are radicals, and at least a part of the organic film formed of the polyimide is made amorphous by irradiation of the radicals so as to have conductivity. The electrode structure of the semiconductor device according to claim 1.
電性物質に変質した導電性有機膜からなる突起電極を形
成することを特徴とする半導体装置の電極形成方法。3. A method for forming an electrode of a semiconductor device, comprising forming an organic film with an insulating material of an organic material, and then irradiating the organic film with high-energy particles to form a conductive organic material. A method for forming an electrode of a semiconductor device, comprising forming a protruding electrode made of a film.
ネルギー粒子はラジカルであり、 このラジカルの照射により前記ポリイミドによる有機膜
の少なくとも一部をアモルファス化させて導電性を具備
させることを特徴とする請求項３記載の半導体装置の電
極形成方法。4. The organic material is polyimide, and the high-energy particles are radicals, and at least a part of the organic film made of the polyimide is made amorphous by irradiation of the radicals so as to have conductivity. The method for forming an electrode of a semiconductor device according to claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2908994A JPH07221108A (en) | 1994-01-31 | 1994-01-31 | Electrode structure of semiconductor device and method of forming the electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2908994A JPH07221108A (en) | 1994-01-31 | 1994-01-31 | Electrode structure of semiconductor device and method of forming the electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07221108A true JPH07221108A (en) | 1995-08-18 |
Family
ID=12266631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2908994A Pending JPH07221108A (en) | 1994-01-31 | 1994-01-31 | Electrode structure of semiconductor device and method of forming the electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07221108A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100769161B1 (en) * | 2001-03-05 | 2007-10-23 | 엘지.필립스 엘시디 주식회사 | LCD and its manufacturing method |
| KR100769162B1 (en) * | 2001-03-07 | 2007-10-23 | 엘지.필립스 엘시디 주식회사 | LCD and its manufacturing method |
| KR100769185B1 (en) * | 2001-02-27 | 2007-10-23 | 엘지.필립스 엘시디 주식회사 | LCD and its manufacturing method |
-
1994
- 1994-01-31 JP JP2908994A patent/JPH07221108A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100769185B1 (en) * | 2001-02-27 | 2007-10-23 | 엘지.필립스 엘시디 주식회사 | LCD and its manufacturing method |
| KR100769161B1 (en) * | 2001-03-05 | 2007-10-23 | 엘지.필립스 엘시디 주식회사 | LCD and its manufacturing method |
| KR100769162B1 (en) * | 2001-03-07 | 2007-10-23 | 엘지.필립스 엘시디 주식회사 | LCD and its manufacturing method |
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