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JPH07216541A - Electron beam scanning method and device therefor - Google Patents

Electron beam scanning method and device therefor

Info

Publication number
JPH07216541A
JPH07216541A JP6008633A JP863394A JPH07216541A JP H07216541 A JPH07216541 A JP H07216541A JP 6008633 A JP6008633 A JP 6008633A JP 863394 A JP863394 A JP 863394A JP H07216541 A JPH07216541 A JP H07216541A
Authority
JP
Japan
Prior art keywords
electron beam
electromagnet
electron beams
crucible
deflecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6008633A
Other languages
Japanese (ja)
Inventor
Tetsuo Hamano
哲男 濱野
Hisao Yamaguchi
久夫 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP6008633A priority Critical patent/JPH07216541A/en
Publication of JPH07216541A publication Critical patent/JPH07216541A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

PURPOSE:To uniformly irradiate selectively whole surface of a material for vapor deposition with electron beams without irradiating a crucible by arranging an electromagnet for deflecting electron beams between an electron beam source and the material for vapor deposition at the time of irradiating the circular material for vapor deposition in the crucible with the electron beams. CONSTITUTION:When an evaporation material 3 filled in a circular recessed part of the crucible 4 is irradiated to be heated and evaporated with the electron beams from the electron beam source 1, the electromagnet for deflecting electron beams 2 is provided between the electron beam source 1 and the evaporation material 3. A control signal having a waveform in which amplitude changes step-by-step is outputted from a waveform generator 6 of a control power source 5 in the electromagnet for deflection 2 by the electron beam from the source 1 and then inputted to a sine-wave generator 7. A sinusoidal current having amplitude corresponding to the control signal is outputted therefrom and is inputted in a Y-axis current output driving circuit 9 through a X-axis current output driving circuit 10 and a 90 deg. phase shifter 8. The surface of the circular evaporation material 3 is thoroughly and uniformly scanned and irradiated with the electron beams by an electromagnet for X-axis deflection 2X and an electromagnet for Y-axis deflection 2Y, respectively connected to the X-axis current output driving circuit 10 and the Y-axis current output driving circuit 9. At that time, the crucible 4 is not irradiated with the electron beams and is not damaged.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、真空蒸着装置その他の
電子ビームを利用する装置に用いられる電子ビーム走査
方法及び装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam scanning method and apparatus used in a vacuum vapor deposition apparatus and other apparatuses using an electron beam.

【0002】[0002]

【従来の技術】従来、図4に示すように、電子ビームが
材料面aの正方形又は長方形の領域bを走査(C)する
電子ビーム走査方法や、図5に示すように、電子ビーム
が材料面aの微小領域dを走査しながら移動し、材料面
aの円形の領域bを走査(C)する電子ビーム走査方法
が知られている。
2. Description of the Related Art Conventionally, as shown in FIG. 4, an electron beam scanning method in which an electron beam scans (C) a square or rectangular region b of a material surface a, or as shown in FIG. There is known an electron beam scanning method in which a minute area d on the surface a is moved while scanning and a circular area b on the material surface a is scanned (C).

【0003】[0003]

【発明が解決しようとする課題】図4及び図5に示す方
法によれば、円形の材料面aの全域に均一に電子ビーム
を照射することが困難であり、また材料を収容した坩堝
が電子ビームに照射されて損傷するという課題があっ
た。
According to the method shown in FIGS. 4 and 5, it is difficult to uniformly irradiate the entire area of the circular material surface a with the electron beam, and the crucible containing the material is electronized. There was a problem that the beam was irradiated and damaged.

【0004】本発明は、従来の電子ビーム走査方法の課
題を解決することをその目的とするものである。
An object of the present invention is to solve the problems of the conventional electron beam scanning method.

【0005】[0005]

【課題を解決するための手段】本発明は、上記の目的を
達成するために、電子ビームの進行方向に垂直な平面上
にあって互いに直交する方向に電子ビームを偏向する2
つの偏向手段に制御電流又は電圧を加えることにより電
子ビームを走査する方法において、前記2つの偏向手段
には、互いに90度の位相差と同一周波数を有し且つ振
幅が互いに同期して変化する制御電流又は電圧を加え、
電子ビームが該制御電流又は電圧に応じた半径の円形に
走査するようにしたことを特徴とする電子ビーム走査方
法であり、また、電子ビームの進行方向に垂直な平面上
にあって互いに直交する方向に電子ビームを偏向する2
つの偏向手段を備える電子ビーム走査装置において、前
記2つの偏向手段に夫々制御電流又は電圧を加える制御
電源として、互いに90度の位相差と同一周波数を有し
且つ振幅が互いに同期して変化可能な2つの制御電流又
は電圧を出力する制御電源を備えることを特徴とする電
子ビーム走査装置である。
In order to achieve the above-mentioned object, the present invention deflects electron beams in directions orthogonal to each other on a plane perpendicular to the traveling direction of the electron beam.
In the method of scanning an electron beam by applying a control current or voltage to one deflection means, the two deflection means have a phase difference of 90 degrees and the same frequency, and their amplitudes change in synchronization with each other. Apply current or voltage,
An electron beam scanning method characterized in that an electron beam scans in a circle having a radius corresponding to the control current or voltage, and is orthogonal to each other on a plane perpendicular to the traveling direction of the electron beam. Deflects the electron beam in two directions 2
In an electron beam scanning device having two deflecting means, as a control power source for applying a control current or a voltage to each of the two deflecting means, they have a phase difference of 90 degrees and the same frequency, and their amplitudes can change in synchronization with each other. An electron beam scanning device comprising a control power supply for outputting two control currents or voltages.

【0006】[0006]

【作用】2つの偏向手段に、それぞれ互いに90度の位
相差と同一周波数を有し且つ振幅が互いに同期する制御
電圧又は電流を加え、その大きさを変化すると、電子ビ
ームは、材料面を所定の半径の円形に走査し、次いで半
径方向に移動して半径の異なる円形に走査する。制御電
流又は電圧の振幅の変化の仕方により、材料面の各半径
の円上を走査する回数を自由に変化することができる。
When a control voltage or current having a phase difference of 90 degrees and the same frequency and amplitudes synchronized with each other is applied to the two deflecting means and the magnitude thereof is changed, the electron beam causes the material surface to move to a predetermined level. , And then move in the radial direction to scan circles with different radii. The number of times of scanning on the circle of each radius of the material surface can be freely changed by changing the amplitude of the control current or voltage.

【0007】したがって、制御電流又は電圧の振幅を零
から所定の値まで任意の時間で変化することにより、電
子ビームは、円形の材料面を均一に且つ所望のエネルギ
で照射し、材料面から外れることがなく、坩堝を損傷し
ない。
Therefore, by changing the amplitude of the control current or voltage from zero to a predetermined value at an arbitrary time, the electron beam uniformly irradiates the circular material surface with desired energy and deviates from the material surface. Without damaging the crucible.

【0008】[0008]

【実施例】以下本発明の実施例を、図面を参照して説明
する。
Embodiments of the present invention will be described below with reference to the drawings.

【0009】図1は、本発明に係る電子ビーム走査方法
を実施する電子ビーム蒸発源の構成の一例を示す図、図
2はその要部のブロック図である。
FIG. 1 is a diagram showing an example of the configuration of an electron beam evaporation source for carrying out the electron beam scanning method according to the present invention, and FIG. 2 is a block diagram of the main part thereof.

【0010】図1において、1は電子ビーム発生源、2
は偏向用電磁石、3は坩堝4に入れた材料である。
In FIG. 1, reference numeral 1 denotes an electron beam source, 2
Is a deflecting electromagnet, and 3 is a material put in the crucible 4.

【0011】偏向用電磁石2は、図2に示すように、X
軸偏向用電磁石2xとY軸偏向用電磁石2yから成り、
電子ビームの進行方向に垂直な平面上にあって互いに直
交する方向に電子ビームを偏向する2つの偏向手段を構
成する。
As shown in FIG. 2, the deflection electromagnet 2 has an X-axis.
It is composed of an electromagnet 2x for axis deflection and an electromagnet 2y for Y axis deflection,
Two deflecting means for deflecting the electron beam in directions orthogonal to each other are formed on a plane perpendicular to the traveling direction of the electron beam.

【0012】この2つの偏向手段に夫々制御電流を加え
る制御電源5は、任意波形の制御信号を発生する波形発
生器6と、この波形発生器6の制御信号が振幅制御入力
端子に加えられる正弦波発生器7と、この正弦波発生器
7の出力を90度移相する90度移相器8と、この90
度移相器8の出力が入力するY軸電流出力ドライブ回路
9と、前記正弦波発生器7の出力が入力するX軸電流出
力ドライブ回路10とから成り、このX軸電流出力ドラ
イブ回路10とY軸電流出力ドライブ回路9が、夫々X
軸偏向用電磁石2xとY軸偏向用電磁石2yに接続され
る。
A control power supply 5 for applying a control current to each of the two deflection means includes a waveform generator 6 for generating a control signal having an arbitrary waveform, and a sine wave to which the control signal of the waveform generator 6 is applied to an amplitude control input terminal. The wave generator 7, a 90-degree phase shifter 8 for shifting the output of the sine wave generator 7 by 90 degrees, and
The Y-axis current output drive circuit 9 to which the output of the phase shifter 8 is input, and the X-axis current output drive circuit 10 to which the output of the sine wave generator 7 is input. The Y-axis current output drive circuit 9 has X
It is connected to the axis-deflecting electromagnet 2x and the Y-axis-deflecting electromagnet 2y.

【0013】前記波形発生器6から、振幅が所定値から
零まで階段状に変化する波形の制御信号が出力し、この
制御信号が正弦波発生器7に入力すると、正弦波発生器
7から制御信号の振幅に応じた振幅の正弦波電流が出力
し、この正弦波電流が90度移相器8及びX軸電流出力
ドライブ回路10に入力する。かくして、X軸偏向用電
磁石2xとY軸偏向用電磁石2yには、互いに90度の
位相差と同一周波数を有し且つ振幅が所定値から零まで
階段状に変化する正弦波のX軸偏向電流とY軸偏向電流
が流れ、該電磁石2xと2yにより、電子ビームは、図
3に示すように、材料3の円形面を、階段状に変化する
X軸及びY軸偏向電流の振幅の各段部に対応する半径の
円形に該各段部の長さに対応する回数走査する。
The waveform generator 6 outputs a control signal having a waveform whose amplitude changes stepwise from a predetermined value to zero, and when this control signal is input to the sine wave generator 7, the sine wave generator 7 controls it. A sine wave current having an amplitude corresponding to the signal amplitude is output, and this sine wave current is input to the 90-degree phase shifter 8 and the X-axis current output drive circuit 10. Thus, the X-axis deflection electromagnet 2x and the Y-axis deflection electromagnet 2y have a sinusoidal X-axis deflection current having the same frequency as the phase difference of 90 degrees and the amplitude changing stepwise from a predetermined value to zero. And a Y-axis deflection current flows, and the electromagnets 2x and 2y cause the electron beam to stepwise change the amplitude of the X-axis and Y-axis deflection currents on the circular surface of the material 3 as shown in FIG. Scan a number of times corresponding to the length of each step into a circle having a radius corresponding to the section.

【0014】尚、前記実施例では正弦波発生器を用いて
いるが、三角波発生器その他の波形発生器を用いること
ができる。前記実施例は、化合物、酸化物など熱伝導が
悪いもの又は昇華物又は融点が高く部分的にしか溶融し
ないものの円形材料を蒸発するのに好適である。
Although a sine wave generator is used in the above embodiment, a triangular wave generator and other waveform generators can be used. The above embodiment is suitable for evaporating a circular material of a compound, an oxide or the like having poor heat conduction, a sublimate, or a material having a high melting point and only partially melting.

【0015】本発明装置は、電子ビームをその発生部か
ら材料面まで偏向させて照射する電子銃にも適用するこ
とができる。
The device of the present invention can also be applied to an electron gun which irradiates an electron beam by deflecting it from the generating portion to the material surface.

【0016】[0016]

【発明の効果】本発明は、上述のとおりの構成を有する
から、円形の材料面の全域に亘って均一に電子ビームを
照射することができ、また、材料を収容する坩堝が電子
ビームに照射されて損傷することがない等の効果を有す
る。
Since the present invention has the above-described structure, it is possible to irradiate the electron beam uniformly over the entire area of the circular material surface, and the crucible containing the material irradiates the electron beam with the electron beam. It has an effect that it is not damaged by being damaged.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明に係る電子ビーム走査方法を実施する
電子ビーム蒸発源の構成の一例を示す線図
FIG. 1 is a diagram showing an example of the configuration of an electron beam evaporation source for carrying out an electron beam scanning method according to the present invention.

【図2】 図1に示す電子ビーム蒸発源の電子ビーム偏
向部のブロック図
FIG. 2 is a block diagram of an electron beam deflection unit of the electron beam evaporation source shown in FIG.

【図3】 本発明に係る電子ビーム走査方法による電子
ビームの走査状態を示す図
FIG. 3 is a diagram showing a scanning state of an electron beam by an electron beam scanning method according to the present invention.

【図4】 従来の電子ビーム走査方法による電子ビーム
の走査状態の一例を示す図
FIG. 4 is a diagram showing an example of a scanning state of an electron beam by a conventional electron beam scanning method.

【図5】 従来の電子ビーム走査方法による電子ビーム
の走査状態の他例を示す図
FIG. 5 is a diagram showing another example of a scanning state of an electron beam by a conventional electron beam scanning method.

【符号の説明】[Explanation of symbols]

2 偏向用電磁石 2x X軸偏向用電磁
石 2y Y軸偏向用電磁石 3 材料 4 坩堝 5 制御電源 6 波形発生器 7 正弦波発生器 8 90度移相器
2 Electromagnet for deflection 2x Electromagnet for X-axis deflection 2y Y-axis deflection electromagnet 3 Material 4 Crucible 5 Control power supply 6 Waveform generator 7 Sine wave generator 8 90 degree phase shifter

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 電子ビームの進行方向に垂直な平面上に
あって互いに直交する方向に電子ビームを偏向する2つ
の偏向手段に制御電流又は電圧を加えることにより電子
ビームを走査する方法において、前記2つの偏向手段に
は、互いに90度の位相差と同一周波数を有し且つ振幅
が互いに同期して変化する制御電流又は電圧を加え、電
子ビームが該制御電流又は電圧に応じた半径の円形に走
査するようにしたことを特徴とする電子ビーム走査方
法。
1. A method for scanning an electron beam by applying a control current or voltage to two deflecting means for deflecting the electron beam in directions orthogonal to each other on a plane perpendicular to the traveling direction of the electron beam, A control current or voltage having a phase difference of 90 degrees and the same frequency and changing amplitudes in synchronization with each other is applied to the two deflection means, and the electron beam is made into a circular shape having a radius corresponding to the control current or voltage. An electron beam scanning method characterized by scanning.
【請求項2】 電子ビームの進行方向に垂直な平面上に
あって互いに直交する方向に電子ビームを偏向する2つ
の偏向手段を備える電子ビーム走査装置において、前記
2つの偏向手段に夫々制御電流又は電圧を加える制御電
源として、互いに90度の位相差と同一周波数を有し且
つ振幅が互いに同期して変化可能な2つの制御電流又は
電圧を出力する制御電源を備えることを特徴とする電子
ビーム走査装置。
2. An electron beam scanning device comprising two deflecting means for deflecting an electron beam in directions orthogonal to each other on a plane perpendicular to the traveling direction of the electron beam, wherein a control current or a control current is supplied to each of the two deflecting means. Electron beam scanning, characterized in that the control power supply for applying a voltage includes a control power supply that outputs two control currents or voltages that have a phase difference of 90 degrees and the same frequency with each other and whose amplitudes can change in synchronization with each other. apparatus.
JP6008633A 1994-01-28 1994-01-28 Electron beam scanning method and device therefor Pending JPH07216541A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6008633A JPH07216541A (en) 1994-01-28 1994-01-28 Electron beam scanning method and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6008633A JPH07216541A (en) 1994-01-28 1994-01-28 Electron beam scanning method and device therefor

Publications (1)

Publication Number Publication Date
JPH07216541A true JPH07216541A (en) 1995-08-15

Family

ID=11698360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6008633A Pending JPH07216541A (en) 1994-01-28 1994-01-28 Electron beam scanning method and device therefor

Country Status (1)

Country Link
JP (1) JPH07216541A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999027149A1 (en) * 1997-11-20 1999-06-03 Toray Industries, Inc. Electron beam deposition device and method of manufacturing thin film by using the deposition device
JP2013112894A (en) * 2011-12-01 2013-06-10 Ulvac Japan Ltd Vacuum deposition device, electron gun, and vacuum deposition method
CN111826613A (en) * 2019-04-15 2020-10-27 日本电子株式会社 Indirect heating evaporation source

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999027149A1 (en) * 1997-11-20 1999-06-03 Toray Industries, Inc. Electron beam deposition device and method of manufacturing thin film by using the deposition device
JP2013112894A (en) * 2011-12-01 2013-06-10 Ulvac Japan Ltd Vacuum deposition device, electron gun, and vacuum deposition method
CN111826613A (en) * 2019-04-15 2020-10-27 日本电子株式会社 Indirect heating evaporation source
CN111826613B (en) * 2019-04-15 2024-04-23 日本电子株式会社 Indirect heating evaporation source

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