JPH07209498A - Charged particle emitting device - Google Patents
Charged particle emitting deviceInfo
- Publication number
- JPH07209498A JPH07209498A JP6014863A JP1486394A JPH07209498A JP H07209498 A JPH07209498 A JP H07209498A JP 6014863 A JP6014863 A JP 6014863A JP 1486394 A JP1486394 A JP 1486394A JP H07209498 A JPH07209498 A JP H07209498A
- Authority
- JP
- Japan
- Prior art keywords
- charged particle
- quadrupole lens
- wide
- scanning
- particle beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は荷電粒子照射装置に係
り、特に半導体加工や排ガス処理装置等に使用されるイ
オンビームや電子ビーム等の荷電粒子の照射装置に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle irradiation apparatus, and more particularly to an apparatus for irradiating charged particles such as an ion beam and an electron beam used in semiconductor processing, exhaust gas processing apparatus and the like.
【0002】[0002]
【従来の技術】従来の電子ビーム或いはイオンビーム照
射装置等の、荷電粒子ビームを2次元に走査する方法と
しては、荷電粒子ビームに対して直交する方向に、時間
に対して鋸状の磁場変動や電場変動を印加して被照射体
に均一に荷電粒子ビームを照射していた。そのため2つ
の走査のための磁石ないし電極を必要としていた。その
ため、走査装置が大きくなる傾向があった。2. Description of the Related Art As a conventional method of two-dimensionally scanning a charged particle beam, such as an electron beam or ion beam irradiation device, a sawtooth magnetic field variation with time in a direction orthogonal to the charged particle beam. And the electric field fluctuation was applied to uniformly irradiate the irradiated object with the charged particle beam. Therefore, a magnet or an electrode for two scans is required. Therefore, the scanning device tends to be large.
【0003】また流体の被照射体に荷電粒子ビームを照
射する際には、均一照射のため走査の周波数を流体の流
速と比較して速くする必要があった。又、荷電粒子を真
空容器内で加速したあと真空容器から取り出す際に、通
過する薄膜の熱等による劣化を避けるために薄膜上の走
査速度を速くする必要があった。Further, when irradiating a charged particle beam on a fluid irradiation target, it is necessary to make the scanning frequency faster than the flow velocity of the fluid for uniform irradiation. Further, when the charged particles are accelerated in the vacuum container and then taken out from the vacuum container, it is necessary to increase the scanning speed on the thin film in order to avoid deterioration of the thin film passing through due to heat or the like.
【0004】[0004]
【発明が解決しようとする課題】本発明は上述の事情に
鑑みなされたもので、荷電粒子ビームを簡単な装置構成
で高速に走査できる荷電粒子照射装置を提供することを
目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a charged particle irradiation apparatus capable of scanning a charged particle beam at high speed with a simple apparatus configuration.
【0005】[0005]
【課題を解決するための手段】本発明の荷電粒子照射装
置は、荷電粒子を固体、液体あるいは気体状の被照射体
に照射する装置において、荷電粒子源と、該荷電粒子源
から発生する荷電粒子ビームを幅広ビームに変換する四
重極レンズと、該幅広ビームを走査する手段とを備えた
ことを特徴とする。A charged particle irradiation apparatus according to the present invention is an apparatus for irradiating charged particles in a solid, liquid or gaseous state with a charged particle source and a charge generated from the charged particle source. A quadrupole lens for converting a particle beam into a wide beam and a means for scanning the wide beam are provided.
【0006】[0006]
【作用】本発明は、従来の荷電粒子照射装置が2次元の
荷電粒子ビームの走査によって、ビームを見かけ上広げ
て照射しているのと異なり、ビームの形状を四重極レン
ズで広げた、幅広なビームをつくり、該幅広ビームを走
査することを特徴としている。従って、従来技術の走査
では通常2方向の走査電源が必要であったが、上記の構
成によれば、一定のエネルギーの荷電粒子ビームの走査
の1方向は走査不要となり、装置が小型化でき且つ高速
走査が容易となる。According to the present invention, unlike the conventional charged particle irradiating apparatus which irradiates the beam by expanding it by scanning a two-dimensional charged particle beam, the beam shape is expanded by a quadrupole lens. The feature is that a wide beam is formed and the wide beam is scanned. Therefore, the scanning of the prior art usually required a scanning power source in two directions, but with the above configuration, scanning in one direction of the charged particle beam having a constant energy becomes unnecessary, and the apparatus can be downsized. High-speed scanning becomes easy.
【0007】幅広ビームをつくるために、従来はビーム
を走査したり、ビーム源を大型化する方法を採ったが、
四重極レンズを用いることにより簡単に幅広ビームが得
られる。また四重極レンズ自体を運動させることによ
り、被照射体に2次元の照射を行うことが容易に可能で
ある。Conventionally, in order to form a wide beam, a method of scanning the beam or enlarging the beam source has been adopted.
A wide beam can be easily obtained by using a quadrupole lens. Further, by moving the quadrupole lens itself, it is possible to easily perform two-dimensional irradiation on the irradiation target.
【0008】[0008]
【実施例】以下、本発明の第1乃至第4の実施例につい
て添付図面を参照しながら説明する。図1乃至図4は、
それぞれ第1乃至第4実施例に対応した説明図であり、
(A)は装置の構成を示し、(B)は荷電粒子ビームの
照射面の断面形状を示す。図5は、四重極レンズの動作
を示す説明図である。尚、各図中同一符号は同一又は相
当部分を示す。DESCRIPTION OF THE PREFERRED EMBODIMENTS First to fourth embodiments of the present invention will be described below with reference to the accompanying drawings. 1 to 4 are
It is explanatory drawing corresponding to 1st thru | or 4th Example, respectively.
(A) shows the structure of an apparatus, (B) shows the cross-sectional shape of the irradiation surface of a charged particle beam. FIG. 5 is an explanatory diagram showing the operation of the quadrupole lens. In the drawings, the same reference numerals indicate the same or corresponding parts.
【0009】図1は本発明の第1実施例の荷電粒子照射
装置である。荷電粒子源1から出た電子ビーム又はイオ
ンビームの荷電粒子ビーム2は四重極レンズ5を通過す
ることで幅広に広がった形状の荷電粒子ビーム3とな
る。その照射面の断面形状10は図示のように幅広の荷
電粒子ビームの中央部がやや膨らんだ形状となる。この
幅広ビーム3をその直交方向11に、従来と同様な走査
電極を用いて走査することにより、2次元のビーム照射
を被照射体に行うことができる。FIG. 1 shows a charged particle irradiation apparatus according to the first embodiment of the present invention. The charged particle beam 2 that is an electron beam or an ion beam emitted from the charged particle source 1 passes through the quadrupole lens 5 and becomes a charged particle beam 3 having a wide spread. The cross-sectional shape 10 of the irradiation surface is such that the central portion of the wide charged particle beam is slightly swollen as shown in the figure. By scanning the wide beam 3 in the orthogonal direction 11 using a scanning electrode similar to the conventional one, a two-dimensional beam irradiation can be performed on the irradiation target.
【0010】四重極レンズの荷電粒子ビームに垂直な面
の断面構成を図5に示す。4個の磁石9が図示するよう
に配置されており、その中央部に荷電粒子ビーム8が紙
面に垂直に紙面の背後から手前方向に流れる。荷電粒子
は磁界によりローレンツ力10を受け、図1(B)に示
す幅広ビームが形成される。FIG. 5 shows a sectional structure of a plane of the quadrupole lens which is perpendicular to the charged particle beam. Four magnets 9 are arranged as shown in the drawing, and the charged particle beam 8 flows in the central portion of the magnet 9 perpendicularly to the paper surface and from the back to the front. The charged particles receive the Lorentz force 10 due to the magnetic field, and a wide beam shown in FIG. 1B is formed.
【0011】荷電粒子ビームを偏向させる四重極レンズ
の電位、磁位を決定するのは、図5に示す磁界レンズの
場合式(1)による。ここでX1,X1′は四重極レン
ズ通過前の変位、速度であり、X2,X2′は四重極レ
ンズ通過後の変位、速度である。係る数式により、四重
極レンズを適宜設計することが可能である。The electric potential and magnetic potential of the quadrupole lens for deflecting the charged particle beam are determined by the equation (1) in the case of the magnetic field lens shown in FIG. Here, X1 and X1 'are displacement and velocity before passing the quadrupole lens, and X2 and X2' are displacement and velocity after passing through the quadrupole lens. It is possible to appropriately design the quadrupole lens by such a mathematical formula.
【0012】[0012]
【数1】 [Equation 1]
【0013】但し、θ=βL β=(e/2mφ)B e:荷電粒子の電荷(クーロン) m:荷電粒子の質量(Kg) B:磁界の強さ(ステラ) L:四重極レンズのビーム通過方向の長さ(m) φ:荷電粒子の電位However, θ = βL β = (e / 2mφ) B e: Charge of charged particles (Coulomb) m: Mass of charged particles (Kg) B: Magnetic field strength (stella) L: Quadrupole lens Beam passing length (m) φ: Charged particle potential
【0014】図2は本発明の第2実施例の荷電粒子照射
装置である。本実施例では、第1実施例の図1(B)に
示す中央部がやや膨らんだ幅広ビームを補正する補正電
極6を備えている。補正電極6は平行平板電極等により
構成され、電極間を通過するビーム形状を図3(B)の
符号14で示すように偏平形状に修正したものである。
又、磁極を用いて符号14で示す偏平形状に修正しても
よい。FIG. 2 shows a charged particle irradiation apparatus according to the second embodiment of the present invention. In this embodiment, a correction electrode 6 for correcting a wide beam in which the central portion shown in FIG. 1B of the first embodiment is slightly swollen is provided. The correction electrode 6 is composed of parallel plate electrodes and the like, and the shape of the beam passing between the electrodes is corrected to a flat shape as shown by reference numeral 14 in FIG. 3 (B).
Alternatively, the flat shape shown by reference numeral 14 may be modified by using magnetic poles.
【0015】図3は、本発明の第3実施例の荷電粒子照
射装置を示す。本実施例においては、図1(B)に示す
四重極レンズで形成される幅広ビームの中央部の膨らみ
が生じないように、四重極レンズに入射する荷電粒子ビ
ームの径を広げて拡大ビーム4とし、四重極レンズ通過
後の荷電粒子の幅広ビーム3の広がり形状13を良くし
ている。このため、四重極レンズに入射する荷電粒子ビ
ームに対して拡大レンズ7を備えている。FIG. 3 shows a charged particle irradiation apparatus according to the third embodiment of the present invention. In the present embodiment, the diameter of the charged particle beam incident on the quadrupole lens is expanded and expanded so that the central portion of the wide beam formed by the quadrupole lens shown in FIG. The beam 4 is used as the beam 4 to improve the spread shape 13 of the wide beam 3 of the charged particles after passing through the quadrupole lens. Therefore, the magnifying lens 7 is provided for the charged particle beam incident on the quadrupole lens.
【0016】図4は、本発明の第4実施例の荷電粒子照
射装置を示す。本実施例においては、四重極レンズを構
成する磁石9を荷電粒子ビームを中心として機械的に回
転させることにより、円板状12に被照射体を照射す
る。FIG. 4 shows a charged particle irradiation apparatus according to the fourth embodiment of the present invention. In the present embodiment, the disk 9 is irradiated with the irradiation object by mechanically rotating the magnet 9 constituting the quadrupole lens about the charged particle beam.
【0017】このようにして、荷電粒子ビームをX,Y
方向に2次元に走査するのと比較して、被照射体を簡単
な構造で、高速に、且つ均一に荷電粒子ビームを照射す
ることができる。尚、第4実施例における四重極レンズ
を機械的に回転させることに代えて、磁石9を電磁石に
より構成し、回転磁界を形成することにより円板状に走
査してもよい。このように本実施例の趣旨を逸脱するこ
となく、種々の変形実施例が可能である。In this way, the charged particle beam is converted into X, Y
Compared with two-dimensional scanning in the direction, the irradiation target can be irradiated with the charged particle beam uniformly at high speed with a simple structure. Incidentally, instead of mechanically rotating the quadrupole lens in the fourth embodiment, the magnet 9 may be constituted by an electromagnet and a rotating magnetic field may be formed to perform scanning in a disc shape. As described above, various modifications can be made without departing from the spirit of the present embodiment.
【0018】[0018]
【発明の効果】以上説明したように本発明によれば、荷
電粒子照射装置の走査手段を四重極レンズを用いて形成
した幅広ビームによって高速且つ均一な照射を可能にし
たものである。従って、半導体製造や電子線照射器に使
用される荷電粒子の利用を容易にすることができ、産業
上大きな効果が期待できる。As described above, according to the present invention, the scanning means of the charged particle irradiation apparatus enables high-speed and uniform irradiation with a wide beam formed by using a quadrupole lens. Therefore, it is possible to facilitate the use of charged particles used in semiconductor manufacturing and electron beam irradiators, and a large industrial effect can be expected.
【図1】本発明の第1実施例の荷電粒子照射装置の説明
図。FIG. 1 is an explanatory diagram of a charged particle irradiation apparatus according to a first embodiment of the present invention.
【図2】本発明の第2実施例の荷電粒子照射装置の説明
図。FIG. 2 is an explanatory diagram of a charged particle irradiation device according to a second embodiment of the present invention.
【図3】本発明の第3実施例の荷電粒子照射装置の説明
図。FIG. 3 is an explanatory diagram of a charged particle irradiation apparatus according to a third embodiment of the present invention.
【図4】本発明の第4実施例の荷電粒子照射装置の説明
図。FIG. 4 is an explanatory diagram of a charged particle irradiation device according to a fourth embodiment of the present invention.
【図5】四重極レンズの動作を示す説明図。FIG. 5 is an explanatory diagram showing the operation of the quadrupole lens.
1 荷電粒子源 2,3,4,8 荷電粒子ビーム 5 四重極レンズ 6 補正電極 7 ビーム径増大レンズ 9 磁石 10,12,13,14 ビーム照射面断面形状 1 Charged Particle Source 2, 3, 4, 8 Charged Particle Beam 5 Quadrupole Lens 6 Correction Electrode 7 Beam Diameter Increasing Lens 9 Magnets 10, 12, 13, 14 Beam Cross Section
Claims (4)
被照射体に照射する装置において、荷電粒子源と、該荷
電粒子源から発生する荷電粒子ビームを幅広ビームに変
換する四重極レンズと、該幅広ビームを走査する手段と
を備えたことを特徴とする荷電粒子照射装置。1. A device for irradiating a solid, liquid or gaseous object to be charged with charged particles, and a quadrupole lens for converting a charged particle beam generated from the charged particle source into a wide beam. And a means for scanning the wide beam, wherein the charged particle irradiation apparatus is provided.
ムのビーム形状を補正する電極又は磁極を更に備えたこ
とを特徴とする請求項1記載の荷電粒子照射装置。2. The charged particle irradiation apparatus according to claim 1, further comprising an electrode or a magnetic pole for correcting the beam shape of the wide beam converted by the quadrupole lens.
大するレンズを更に備え、該拡大されたビームを前記四
重極レンズで幅広ビームに変換したことを特徴とする請
求項1記載の荷電粒子照射装置。3. The charged particle according to claim 1, further comprising a lens that expands a beam generated from the charged particle source, and the expanded beam is converted into a wide beam by the quadrupole lens. Irradiation device.
四重極レンズ自体を運動させる手段であることを特徴と
する請求項1記載の荷電粒子照射装置。4. The charged particle irradiation apparatus according to claim 1, wherein the means for scanning the wide beam is means for moving the quadrupole lens itself.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6014863A JPH07209498A (en) | 1994-01-13 | 1994-01-13 | Charged particle emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6014863A JPH07209498A (en) | 1994-01-13 | 1994-01-13 | Charged particle emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07209498A true JPH07209498A (en) | 1995-08-11 |
Family
ID=11872870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6014863A Pending JPH07209498A (en) | 1994-01-13 | 1994-01-13 | Charged particle emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07209498A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007046213A1 (en) * | 2005-10-18 | 2007-04-26 | Japan Ae Power Systems Corporation | Electron beam application method, electron beam application device, electron beam application device for opening-equipped vessel |
JP2008159585A (en) * | 2006-12-22 | 2008-07-10 | Axcelis Technologies Inc | System and method for implanting ions into a workpiece |
CN103140012A (en) * | 2011-11-25 | 2013-06-05 | 中国原子能科学研究院 | Electron Irradiation Accelerator with Titanium Film Protection Function |
CN111885809A (en) * | 2020-06-30 | 2020-11-03 | 中国原子能科学研究院 | Wide-energy large-beam-spot electron accelerator |
-
1994
- 1994-01-13 JP JP6014863A patent/JPH07209498A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007046213A1 (en) * | 2005-10-18 | 2007-04-26 | Japan Ae Power Systems Corporation | Electron beam application method, electron beam application device, electron beam application device for opening-equipped vessel |
US7767987B2 (en) | 2005-10-18 | 2010-08-03 | Japan Ae Power Systems Corporation | Electron beam irradiation method, electron beam irradiation apparatus, and electron beam irradiation apparatus for open-mouthed container |
JP2008159585A (en) * | 2006-12-22 | 2008-07-10 | Axcelis Technologies Inc | System and method for implanting ions into a workpiece |
CN103140012A (en) * | 2011-11-25 | 2013-06-05 | 中国原子能科学研究院 | Electron Irradiation Accelerator with Titanium Film Protection Function |
CN111885809A (en) * | 2020-06-30 | 2020-11-03 | 中国原子能科学研究院 | Wide-energy large-beam-spot electron accelerator |
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