JPH07205424A - Substrate for recording head, and its production - Google Patents

Abstract

PURPOSE:To reduce a power demand to enable a heater to be extended in life and made fine in size to ensure a high integration by removing at least a part of a substrate around electrothermal conversion elements. CONSTITUTION:A plurality of electrothemal conversion elements 110, driving functional elements 120 respectively driving the electrothermal conversion elements 110, and a plurality of wiring electrodes 104 respectively connecting the driving functional elements 120 to the electrothermal conversion elements 110 are formed by a photolithography. On a recording head substrate 100, at least a part 200 of the substrate 100 around the electrothermal conversion elements 110 is removed. As a result, a substrate for an energy-saving recording head reduced in power demand can be obtained. By suppressing a power demand, a heater can be prevented from being exhausted, namely being extended in life. Furthermore, by suppressing a power demand, a heater can be made fine in size, and ink jet recording elements can be highly integrated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a recording head substrate having an electric heat exchange element and a recording functional element formed on a substrate, and a method of manufacturing a recording head using the recording head substrate. The present invention relates to a recording head substrate used in an inkjet recording apparatus used in a copying machine, a facsimile, a word processor, an output printer of a host computer, a video output printer, and the like, and a method of manufacturing the recording head.

[0002]

2. Description of the Related Art Conventionally, a recording head has a structure in which an electrothermal conversion element array is formed on a single crystal silicon substrate, and a driving circuit for the electrothermal conversion element is provided outside a silicon substrate for driving an electrothermal conversion element such as a transistor array. A functional element is arranged, and a connection between the electrothermal conversion element and the transistor array is made by a flexible cable or wired bonding.

Simplification of the structure considered for the above-mentioned head configuration, or reduction of defects occurring in the manufacturing process,
Furthermore, for the purpose of making the characteristics of each element uniform and improving the reproducibility, a recording head provided with an electrothermal conversion element and a functional element as proposed in JP-A-57-72867 is provided on the same substrate. Ink jet recording apparatuses having the same are known.

FIG. 18 is a sectional view showing a part of the recording head substrate having the above-mentioned structure. Reference numeral 1 is a semiconductor substrate made of single crystal silicon. Reference numeral 4 is an N-type semiconductor epitaxial region, 11 is a high impurity concentration N-type semiconductor ohmic contact region, 8 is a P-type semiconductor base region, 1
Reference numeral 0 denotes an emitter region of a high impurity concentration N-type semiconductor, which forms the bipolar transistor 20. 1
02 is a silicon oxide layer as a heat storage layer and an interlayer insulating layer, 103 is a heating resistance layer, and 104 is aluminum (A
The wiring electrode l) and the silicon oxide layer 105 as a protective layer form the substrate for the recording head.
Here, 110 is the heat generating portion. A top plate and a liquid path are formed on this substrate to form a recording head.

[0005]

In recent years, miniaturization of various information devices has progressed, and there is a demand for a compact, lightweight, and formable inkjet recording device as described above. In order to realize such an inkjet recording apparatus, an inkjet recording apparatus that can be driven by a battery for a long time, that is, a recording head with high integration, long life, and low power consumption is essential.

As a fate of an ink jet recording apparatus that generates bubbles from a liquid by heat and ejects the ink, a certain amount of heat is required to vaporize the liquid, and this amount of heat is a major factor that increases power consumption. Has become. Therefore, in order to realize a recording head with low power consumption, it is very effective to improve the thermal efficiency of this heat generating portion.

Further, excessive heat generation leads to burnout of the heater, shortening the life of the heater. Furthermore, if the electric power supplied to the heater is small, it is possible to miniaturize even a heater having the same life, which enables high integration of elements.

It is an object of the present invention to provide a substrate for an energy-saving recording head that consumes less power and a method for manufacturing the recording head. Another purpose is to prevent heater burnout by suppressing power consumption, that is, to extend the life of the heater. Another object is to reduce the power consumption, thereby making it possible to miniaturize the heater and to achieve high integration of the inkjet recording element.

[0009]

Means for solving the problems according to the present invention will be described with reference to FIG.

The heat generated in the heat generating part 110 is conducted, convected,
Although it is transmitted to the surroundings by radiation, conduction is dominant in the transfer of heat energy because the heat generating part is solid and the heat generation temperature is several hundred degrees. The heat used for bubbling that causes the ejection of ink is only the thermal energy transferred to the upper portion of the heat generating portion 110, and the heat to the lower portion of the heat generating portion 110 is wasted. Therefore, it is necessary to generate more heat than necessary in the heat generating part 110 for foaming, which hinders low power driving, energy saving, long life of the heater, and further miniaturization. It is effective to solve the above problems to suppress the heat conduction to the lower part of the heat generating part 110 and effectively utilize the heat energy.

Specifically, the heat conduction around the heat generating portion of the recording head substrate is reduced by the substrate hollow 200 to reduce the escape of heat and enhance the heat storage effect.

Further, instead of hollowing out the substrate, the substrate is made porous to lower the thermal conductivity, reduce the escape of heat, and enhance the heat storage effect.

Further, by grooving a groove in the substrate around the electrothermal converting element to make it hollow, the escape of heat is reduced and the heat storage effect is enhanced.

[0014]

【Example】

Example 1 FIG. 1 is a schematic sectional view of a recording head substrate manufactured according to the present invention. Substrate 10 as substrate for recording head
Reference numeral 0 indicates that the heat generating portion 110 which is an electrothermal conversion element and the bipolar NPN transistor 120 which is a functional element for driving are formed on the P type silicon substrate 1. In FIG. 1, 1 is a P-type silicon substrate, 2 is an N-type collector embedded region for forming a functional element, 3 is a P-type isolation embedded region for separating functional elements, 4 is an N-type epitaxial region, Reference numeral 5 is a P-type base region for forming a functional element, 6 is a P-type isolation embedded region for element isolation, 7 is an N-type collector embedded region for forming a functional element, and 8 is an element. A high-concentration P-type base region, 9 is a high-concentration P-type isolation region for device isolation, 10 is an N-type emitter region for forming a device,
11 is a high concentration N-type collector region for forming an element,
Reference numeral 12 is a collector / base common electrode, 13 is an emitter electrode, and 14 is an isolation electrode. Here NP
The N-transistor 120 is formed, and is 2, 4, 7,
A collector region 11 is formed so as to completely surround the emitter region 10 and the base regions 5 and 8. Each cell is surrounded and electrically isolated by a P-type isolation buried region, a P-type isolation region 7, and a high-concentration P-type isolation region as an element isolation region.

Here, the NPN transistor 120 is
Two high-concentration N-type collector regions 11 formed on the P-type silicon substrate 1 via the N-type collector buried region 2 and the N-type collector buried region 2, and the N-type collector buried region 2 and the P-type base region High-concentration N-type collector region 1 through 5
Two high-concentration P-type base regions 8 formed inside 1
And a high-concentration N-type emitter region 10 formed by being sandwiched between the high-concentration P-type base region 8 and the N-type collector buried region 2 and the P-type base region 5, the structure of the NPN transistor is The high concentration N type collector region 11 and the high concentration P type base region 8 are collector / base common electrodes 12
It operates as a diode by being connected by. Further, adjacent to the NPN transistor 120, the P-type isolation buried regions 3 and P as element isolation regions are provided.
The type isolation region 6 and the high-concentration P type isolation region 9 are sequentially formed. Further, the heating resistance layer 103 includes the N-type epitaxial region 4, the heat storage layer 101, and the interlayer film 102 integrally provided with the heat storage layer 101.
The heating electrode is formed on the P-type silicon substrate 1 through the vias, and the wiring electrode 104 formed on the heating resistance layer 103 is cut to form two edges 104 ₁ that are connection end faces, respectively, and 110 is configured.

The entire surface of the recording head substrate 100 is covered with a heat storage layer 101 formed of a thermal oxide film or the like, and the electrodes 12, 13 and 14 of the functional element are formed of Al or the like.

In the substrate 100 of this embodiment, a collector / base common electrode 12, an emitter electrode 13 and an isolation electrode 14 are formed on a P-type silicon substrate 1 for a recording head having the above-mentioned drive section (functional element). It is covered with a heat storage layer 101, and an atmospheric pressure CVD method is used for the upper layer.
An interlayer film 102 made of a silicon oxide film or the like is formed by the PCVD method, the sputtering method, or the like. Each electrode 1
Since Al and the like forming 2, 13, and 14 have inclined side surfaces, the step coverage of the interlayer film 102 is very excellent. Therefore, the interlayer film 102 is thin as compared with the conventional one in the range where the heat storage effect is not lost. Can be formed. Interlayer film 1
02 is partially opened to form a collector / base common electrode 1
2, emitter electrode 13 and isolation electrode 14
A wiring electrode 104 made of Al or the like for electrically connecting with and forming an electrical wiring on the interlayer film 102 is provided. That is, after partially opening the interlayer film 102,
Heat generating resistance layer 103 such as HfB _{2 formed} by sputtering method
And an electrothermal conversion element composed of a wiring electrode 104 of Al or the like formed by a vapor deposition method or a sputtering method. Here, as a material for forming the heating resistance layer 103, Ta, ZrB ₂ , Ti-W, Ni-Cr, Ta-A is used.
1, Ta-Si, Ta-Mo, Ta-W, Ta-Cu,
Ta-Ni, Ta-Ni-Al, Ta-Mo-Al, T
a-Mo-Ni, Ta-W-Ni, Ta-Si-Al,
Ta-W-Al-Ni and the like.

The wiring electrode 104 of Al or the like has an edge portion 104 ₁ and a side surface 104 ₂ which are connection end surfaces inclined by 30 ° or more with respect to the normal line. Further, on the heat generating portion 110 of the electrothermal conversion element shown in FIG. 1, SiO, SiO ₂ , SiN, S is formed by the sputtering method or the CVD method.
A protective film 105 such as iON and a protective film 106 such as Ta are provided integrally with the interlayer film 102.

As shown in FIG. 2, the substrate 100 thus constructed has a liquid passage 505 communicating with a plurality of ejection ports 500.
Liquid path wall member 5 made of photosensitive resin or the like for forming
01 and the top plate 502 having the ink supply port 503 are attached to the recording head 5 of the inkjet recording system.
It can be 10. In this case, the ink supply port 50
The ink injected from No. 3 is stored inside the common liquid chamber 504 and supplied to each liquid passage 505, and in that state, the substrate 100
Ink is ejected from the ejection port 500 by driving the heat generating part 110 of FIG.

The feature of this embodiment is that the substrate hollow portion 200 is provided below the heat generating resistance layer. The heat generated in the heat generating portion 110 is transmitted to the surroundings by conduction, convection, and radiation, but conduction is dominant in heat energy transfer because the heat generating portion is solid and the heat generation temperature is several hundred degrees. The heat used for bubbling that causes the ejection of ink is only the thermal energy transferred to the upper portion of the heat generating portion 110, and the heat to the lower portion of the heat generating portion 110 is wasted. Therefore, the heating unit 110
In this case, it is necessary to generate more heat than necessary for foaming, which hinders low power driving, energy saving, long life of the heating resistance layer, and further miniaturization. Heating unit 110
Suppressing heat conduction to the lower part and effectively utilizing heat energy is effective in solving the above problems. Here, the heating unit 1
The thermal conductivity of the lower 10 constituent materials is shown below.

Conventionally, SiO ₂ , S is formed below the heat generating portion 110.
Although it was composed of the i substrate, the heat conductivity was reduced from 148 to 0.0259 by a factor of 50,000 by providing the hollow portion 200, so that the heat energy was effectively transmitted through the ink and the heat energy Effective use became possible.

The thermal conductivity of each material (300K) material thermal conductivity / W · m-1 · K -1 air (N 2) 0.0259 Next SiO ₂ 1.38 Si 148 AI 237, the present embodiment A manufacturing process of the recording head 510 will be described.

(1) P-type silicon substrate 1 (impurity concentration 1
8000 × 10 ¹² to 1 × 10 ¹⁶ cm ⁻³ )
After forming a silicon oxide film having a thickness of about Å, the silicon oxide film in the portion forming the N-type collector buried region 2 of each cell was removed by a photolithography process. After forming a silicon oxide film, N-type impurities (for example, P, As, etc.)
Is ion-implanted and the impurity concentration is 1 × 10 ¹⁸ c by thermal diffusion.
The N-type collector buried region 2 having a thickness of m ⁻³ or more was formed to a thickness of 2 to 6 μm so that the sheet resistance was as low as 80 Ω / port or less. Then, the P-type isolation buried region 3
Remove the silicon oxide film in the area where
After a silicon oxide film is formed to a certain extent, P-type impurities (for example, B) are ion-implanted and thermally diffused to form a P-type isolation buried region having an impurity concentration of 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ⁻³ or more. 3 was formed (FIG. 3 above).

(2) After removing the silicon oxide film on the entire surface, the N-type epitaxial region 4 (impurity concentration 1 × 10 ¹³
˜1 × 10 ¹⁵ cm ⁻³ ) was epitaxially grown to a thickness of 5 to 20 μm (above FIG. 4).

(3) Next, a silicon oxide film of about 1000 Å is formed on the surface of the N type epitaxial region 4, a resist is applied and patterning is performed, and P is formed only in the portion where the low concentration P type base region 5 is formed. Type impurities were ion-implanted. After removing the resist, a low concentration P-type base region 5 (impurity concentration of about 1 × 10 ¹⁴ to 1 × 10 ¹⁷ cm ⁻³ ) was formed by thermal diffusion to a thickness of about 5 to 10 μm.

The P-type base region 5 is formed after the step (1).
It can also be formed by removing the oxide film and then growing a low-concentration P-type epitaxial layer of about 5 × 10 ^{14 to} 5 × 10 ¹⁷ about 3 to 10.

After that, the silicon oxide film is entirely removed again, and a silicon oxide film of about 8000 Å is further formed. Then, the silicon oxide film in the region where the P-type isolation region 6 is to be formed is removed, and the BSG film is entirely formed. The P type isolation region 6 (impurity concentration of about 1 × 10 ¹⁸ to 1 × 10 ²⁰ cm ⁻³ ) is deposited so as to reach the P type isolation embedded region 3 by thermal diffusion. To a thickness of about 10 μm. Here, BBr ₃
It is also possible to form the P-type isolation region 6 by using as a diffusion source (above FIG. 5).

As described above, when the P-type epitaxial layer is used, a structure in which the P-type isolation buried region 3 and the P-type isolation region 6 are unnecessary is possible. The photolithography process and the high temperature impurity diffusion process for forming the P-type isolation region 6 and the low-concentration base region 5 can be omitted.

(4) After removing the BSG film, 8000Å
After the silicon oxide film is formed to a certain degree and the silicon oxide film is removed only in the portion where the N-type collector region 7 is formed, the collector buried region 5 is formed by N-type solid phase diffusion and phosphorus ion implantation or thermal diffusion. And an N-type collector region 7 (impurity concentration of about 1 × 10 ¹⁸ to 1 × 10 ²⁰ cm ⁻³ ) was formed so that the sheet resistance reached 10 ° C. and the sheet resistance was as low as 10 Ω / hole or less. At this time, the thickness of the N-type collector region 7 was set to about 10 μm. Subsequently, a silicon oxide film having a thickness of about 12,500 Å was formed to form the heat storage layer 101 (see FIG. 7), and then the silicon oxide film in the cell region was selectively removed.

The heat storage layer 101 is formed by forming the N-type collector region 7 and then forming a silicon thermal oxide film having a thickness of 1000 to 3000 Å, and further using a CVD method, a PCVD method, a sputtering method or the like to form BPSG (boron and phosphorus). A film of silicate glass containing Si), PSG (silicate glass containing phosphorus), SiO ₂ , SiON, SiN or the like may be formed. Then, a silicon oxide film having a thickness of about 2000 Å was formed.

Resist patterning was performed, and P-type impurities were implanted only in the portions where the high-concentration base region 8 and the high-concentration isolation region 9 were formed. After removing the resist, the silicon oxide film in the region where the N-type emitter region 10 and the high-concentration N-type collector region 11 are to be formed is removed, a thermal oxide film is formed on the entire surface, and N-type impurities are implanted. The N-type emitter region 10 and the high-concentration N-type collector region 11 were simultaneously formed by diffusion. The N-type emitter region 10 and the high-concentration N-type collector region 11 each have a thickness of 1.0 μm or less and an impurity concentration of 1 × 10.
^{It was set} to about ¹⁸ to 1 × 10 ²⁰ cm ^-3 (above FIG. 6).

(5) Further, after removing the silicon oxide film at the connection portion of the partial electrodes, Al or the like was deposited on the entire surface, and Al or the like other than the partial electrode region was removed. Here, unlike the conventional wet etching, the removal of Al resulted in a wiring shape having inclined side surfaces in the method of performing etching while retracting the photoresist.

As the etching solution, a developing solution conventionally used for patterning a resist, that is, an aqueous solution containing TMAH (tetramethylammonium hydroxide) can be used. As a result, the side wall of the wiring is inclined by about 60 degrees with respect to the normal line. A stable shape was obtained (above FIG. 7).

(6) Then, an SiO ₂ film to be the interlayer film 102 which also has a function as a heat storage layer is formed on the entire surface by PCVD to a thickness of about 0.6 to 1.0 μm.

The interlayer film 102 may be formed by the atmospheric pressure CVD method. Further, not only the SiO ₂ film but also SiON
It may be a film, a SiO film or a SiN film.

Next, in order to establish electrical connection, a part of the interlayer film 102, which is above the emitter region and the base / collector region, was opened by photolithography to form a through hole TH (see FIG. 8 above).

When etching the insulating film such as the interlayer film 102 and the protective layer 105, a mixed acid etching solution such as NH ₄ F + CH ₃ COOH + HF is used to penetrate the etching film into the interface between the resist (mask photoresist) and the insulating film. By doing so, the etching cross-section is tapered (3 for the normal)
0 degree or more and 75 degrees or less is preferable). This is excellent in the step coverage of each film formed on the interlayer film, and helps stabilize the manufacturing process and improve the yield.

(7) Next, H as the heating resistance layer 103
About 1000 Å of fB ₂ was deposited on the interlayer film 102 and on the electrode 13 and the electrode 12 above the emitter region and the base / collector region for electrical connection through the through hole TH.

(8) On the heating resistance layer 103, a pair of wiring electrodes 104, 104 of the electrothermal conversion element, a cathode wiring electrode 104 of the diode, and an anode wiring electrode 109.
5,000 Å of a layer made of Al material as
Al and HfB ₂ (heating resistance layer 103) were patterned to simultaneously form an electrothermal conversion element and other wiring. Here, the patterning of Al is the same as the above method (FIG. 9 above).

(9) After that, a SiO ₂ film 105 as a protective layer of the electrothermal conversion element and an insulating layer between the Al wirings was deposited by about 10,000 Å by the PCVD method or the like. the first,
The film growth is performed at a relatively low temperature (150 to 250 ° C.) to suppress the growth of hillocks, as described above. In addition to the SiO ₂ film, the protective film 105 is made of SiO, S
A film such as iN or SiON may be used.

After that, Ta is applied as a protective layer 106 for cavitation resistance to the upper portion of the heat generating portion of the electrothermal converter.
About 00Å was deposited.

(10) The electrothermal conversion element, Ta and SiO ₂ film 105 produced as described above were partially removed to form a pad 107 for bonding (above FIG. 10).

(11) Next, a liquid passage wall member for forming the ink ejection portion 500 and the top plate 502 are arranged on a substrate having a semiconductor element, and an ink liquid passage is formed inside them. A head was manufactured (above FIG. 1).

Next, the hollow portion 2 which is a feature of this embodiment.
The 00 production process is shown below.

After the electrothermal conversion element and the driving functional element are formed on the Si substrate, the silicon oxide film grown (deposited) on the back surface at the time of forming the element is patterned by photolithography to form the hollow region 200. To limit. After the surface of the silicon substrate on which the element was formed was protected by a resist and a jig, the silicon substrate of the hollow portion 200 was removed from the back surface by etching. The etching liquid used was a TMAH (tetramethylammonium hydroxide) 22% solution heated to 90 degrees. The film used as a mask on the back surface is
A SiN _x film deposited by the low pressure vapor phase synthesis method may be used.

Further, since the hollow portion 200 is provided, the ink can be supplied from either the upper or lower side of the heater portion, and may be supplied from the hollow portion 200 side instead of the upper portion of the heater shown in FIG. 15).

The hollow portion 200 was formed by the above-described hollow portion forming step, the top plate and the discharge port were formed on the hollow portion side, and the ink was supplied from the back surface. At this time, a reinforcing plate may be attached to the side where the element is formed to reinforce the film. Also,
The reinforcing plate is preferably made of glass, quartz, or the like, which has a low thermal conductivity.

Embodiment 2 FIG. 12 is a view best showing this embodiment.

The feature of this embodiment is that a part of the silicon substrate under the heat generating portion 110 is made porous.

The porous layer 220 is obtained by making a silicon substrate porous, and a silicon oxide film is grown on the surface by a later oxidation process or natural oxidation. The pore diameter of the porous layer is several tens of angstroms, and the ratio of the porous substrate is more than 50%. In addition, since the pore size is minute, there is almost no inflow or outflow of air, and electric heat due to convection can be ignored. Therefore, heat conduction is determined by the silicon oxide film and air rather than silicon alone, and is 1/100 or less compared to silicon alone. As a result, this porous layer 220 functions as a heat insulating layer below the heat generating portion 110, and heat can be efficiently transmitted only to the upper portion of the heat generating portion 110.

The manufacturing process of the porous layer 220 will be described below.

After the 110 heat storage layer is formed by the same process as in Example 1, resist patterning is performed to remove the silicon oxide film in the region 220 for making the substrate porous and the silicon oxide film formed on the back surface. After that, reference (1)
The silicon substrate was made porous by the anodization method as described in 1. Specifically, electricity is applied in a hydrofluoric acid-ethanol aqueous solution so that the region 220 to be made porous becomes an anode,
Current density 10 ^-2 A / cm ² Approximately 15 at a current flow time of 14 minutes
A silicon porous layer 220 having a thickness of μm was created. The thickness of the porous layer is variable depending on the electric current and the time of energization, and the entire lower silicon substrate in the region 220 to be made porous may be made porous. The thickness of the porous layer is arbitrary. The subsequent steps were the same as in Example 1. The composition of the hydrofluoric acid-ethanol aqueous solution is preferably 1: 1: 1. References (1) RLSmith and SDCollins J.Appl.Phys.71, R1
(1992) Third Embodiment Further, the substrate hollow portion 200 may be formed by removing only the heat generating portion 110 and a part of the lower substrate (FIG. 16). Even if the substrate was provided with the cavity 200 as shown in FIG. 17, it was possible to prevent heat from escaping to the lower part. The process of making the cavity 200 is shown below.

As shown in the previous embodiment, after forming the heat storage layer 101, the portion 200 to be hollowed is made porous. Then, after forming up to 110 heat generating parts as in the above-mentioned embodiment, the substrate was separated into individual recording head elements by dicing. A typical recording head element is, for example,
A large number of 5'silicon wafers can be simultaneously formed. After that, the porous silicon is selectively etched and removed from the side wall of the substrate by using the TMAH solution shown in the previous embodiment. Since the etching rate of the porous silicon produced by the method according to the previous embodiment is about 100 times faster than that of the single silicon, the porous layer is selectively removed. The cavity 200 is formed as described above. After that, top plate 5
02, the ejection portion 500, and the like were formed in the same manner as in the above-described embodiment to form a recording head.

According to the method of this embodiment, since the cavity is a part of the substrate, the rigidity of the element can be increased as compared with the embodiment 1 in which all the base body under the 110 heat generation resistance layer is removed. In addition, there is an advantage that heat loss can be reduced as compared with the case where the porous layer 220 is provided as in the second embodiment.

Example 4 FIG. 13 is a schematic cross-sectional view showing the procedure for manufacturing a recording head substrate manufactured in this example.

In FIG. 13, reference numeral 300 denotes a silicon substrate, 3
01 is a buried oxide film, 302 is an element isolation oxide film, 30
4 is a driving element, 305 is an electrothermal conversion element, 306 is a wiring electrode, 307 is a silicon substrate hollow groove, 308 is a photosensitive material, 309 is impurity ions, 310 is a semiconductor layer, 330
Is an SOI substrate.

In this embodiment, a substrate 33 manufactured as an element
The insulating film 301 is made of single crystal silicon 310, polycrystalline silicon 310, or amorphous silicon 310. Of these, the one in which the single crystal silicon 310 is formed on the insulating film 301 (SOI substrate) can be obtained by a direct bonding method or an oxygen ion implantation method. As the direct bonding method, the method disclosed in JP-A-5-21338 is most effective.

By selectively oxidizing the SOI substrate (a), the element isolation oxide film 302 is formed (b).

Subsequently, impurity ions 309 are implanted into the surface using the photosensitive material 308 as a mask (c). In addition, heat treatment is performed to form the driving element 304 and the electrothermal conversion element 305 (d).

Here, the driving element 304 is a diode structure element, and may be a bipolar transistor structure element or a MOS transistor structure element having any structure as long as its application is satisfied. But it doesn't matter.

The electrothermal conversion element 305 was formed by implanting the impurity ions, but the first embodiment
It can be easily inferred that the material for forming the heat generating resistance layer 103 shown in can be formed.

Subsequently, the wiring substrate 306 and the silicon substrate hollow groove 307 for forming the silicon substrate hollow groove 307 are formed by the method shown in the first embodiment.

According to this embodiment, by forming each element on the insulating layer, heat conduction from the electrothermal conversion element 305 can be suppressed and the driving element 304 can be suppressed.
Since it can be formed with a simple structure, the manufacturing cost can be significantly reduced.

Example 5 FIG. 14 shows an electrothermal converting element portion based on this example of a schematic sectional view (FIG. 1) of a recording head substrate manufactured according to the present invention. In FIG. 14, 400 is a silicon substrate, 401 is a heat storage layer, 406 is a wiring electrode, 40
Reference numeral 6 is a heating resistance layer, and 407 is a heating resistance layer separation region.

Here, the NPN transistor 120, which is a driving element, is manufactured by the method shown in the first embodiment.

The heating resistance layer separation region 407 is formed of the NP.
It is formed after manufacturing the N-transistor 120.

The photolithography technique is most effective for formation, but it can also be realized by a mechanical method or the like.

In the case of using the photolithography technique, for example, a photosensitive material is applied to a thickness of 2.5 μm and patterning is performed, and then etching material gas SF ₆ = 18 SCC is used.
M, CH ₂ F ₂ = 33SCCM, Cl ₂ = 30SCC
M and He = 5 SCCM are flown into the etching chamber, and the pressure from the etching chamber is 10 m.
Control to Torr. When etching is performed for 7 minutes in this atmosphere, the heating resistance layer isolation region 407 is formed in a groove having a patterning width of 1 μm and a depth of 7 μm.

The heat storage layer 401 is formed by a CVD method, a sputtering method or the like. In the formation of the heat storage layer 401,
It is not necessary to completely embed the heating resistance layer separation region 407. On the contrary, it is more effective not to embed it completely.

The wiring electrodes and the heating resistance layer 405 are manufactured by the method shown in the first embodiment. Also, the drive element,
The driving method of the electrothermal conversion element is also the same as that shown in the first embodiment.

According to this embodiment, the heat generating resistor layer 405 is formed by removing the silicon substrate between the heat generating resistor layers.
It is possible to suppress the heat conduction from the electro-thermal conversion element and to completely prevent malfunction due to heat conduction between the electrothermal conversion elements.

Further, it is possible to form the heating resistance layer separation region 407 up to the driving element section 120.

By forming the heating resistance layer separation region 407 up to the driving element section 120, it is possible to completely prevent an electrical malfunction between the driving element sections 120 and to simplify the element structure of the driving element 120. Can be made into a simple structure.

[0074]

As described above, according to the present invention,
By configuring a part of the lower part of the heat generating part with gas,
We were able to dramatically improve the thermal efficiency of the heat generating part. Specifically, the thermal conductivity of the lower part of the heat generating part was reduced to a maximum of 1 / 50,000, and heat was applied almost only to the ink above the heat generating part. Further, since the heat is effectively transmitted to the ink, it is possible to reduce the amount of heat generation, and it is possible to extend the life of the heating element until the wire is broken. Moreover, since the life of the heating element is extended, the width of the heating element can be made narrower, and the recording element can be miniaturized and highly integrated.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a recording head substrate manufactured according to the present invention.

FIG. 2 is a schematic cross-sectional view showing the appearance of a recording head manufactured according to the present invention.

FIG. 3 is a schematic cross-sectional view for explaining an example of a recording head manufacturing method according to the present invention.

FIG. 4 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 5 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 6 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 7 is a schematic cross-sectional view for explaining an example of a recording head manufacturing method according to the present invention.

FIG. 8 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 9 is a schematic cross-sectional view for explaining an example of a recording head manufacturing method according to the present invention.

FIG. 10 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 11 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 12 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 13 is a schematic cross-sectional view for explaining an example of a recording head manufacturing method according to the present invention.

FIG. 14 is a schematic cross-sectional view for explaining an example of a method of manufacturing a recording head according to the present invention.

FIG. 15 is a sectional view showing a part of a recording head substrate according to the present invention.

FIG. 16 is a schematic cross-sectional view showing a recording head substrate manufactured according to the present invention.

FIG. 17 is a schematic cross-sectional view of a recording head manufactured according to the present invention.

FIG. 18 is a schematic cross-sectional view of a recording head substrate by a compliant method.

[Explanation of symbols]

 1 P-type silicon substrate 2 N-type collector buried region 3 P-type isolation buried region 4 N-type epitaxial region 5 P-type base region 6 P-type isolation region 7 N-type collector region 8 High concentration P-type base region 9 High Concentration P-type isolation region 10 High-concentration N-type emitter region 11 High-concentration N-type collector region 12 Collector / base common electrode 13 Emitter electrode 14 Isolation electrode 100 Recording head 101 Heat storage layer 102 Interlayer film 103 Heating resistance layer 104 Wiring electrode 105 Protective film 106 Protective film 107 Bonding pad 110 Heat generating part 120 NPN transistor 200 Base hole hollow part 220 Porous layer 300 Silicon substrate 301 Embedded oxide film 302 Element isolation oxide film 304 Driving element 305 Electrothermal conversion element 306 Wiring electrode 3 07 Silicon substrate hollow groove 308 Photosensitive material 309 Impurity ion 310 Semiconductor layer 400 Silicon substrate 401 Heat storage layer 405 Heating resistance layer 406 Wiring electrode 500 Discharge port 501 Liquid path wall member 502 Top plate 503 Ink supply port 510 Recording head

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Yasuhiro Sekine 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Seiichi Tamura 3-30-2 Shimomaruko, Ota-ku, Tokyo Kya Non non corporation

Claims (20)

[Claims] 1. A plurality of electrothermal exchange elements, a drive functional element for driving each electrothermal exchange element by photolithography, and a plurality of connecting each drive functional element and each electrothermal exchange element by photolithography. In the recording head substrate for forming the wiring electrode, at least a part of the supporting substrate around the electric heat exchange element is removed. 2. A method of manufacturing a recording head substrate, wherein at least a part of the supporting substrate around the electric heat exchange element according to claim 1 is removed by etching. 3. A substrate for a recording head, wherein the substrate according to claim 1 is mainly composed of silicon. 4. The recording head substrate according to claim 1, wherein a recording solvent (ink) is injected into a portion where the substrate is removed. 5. The recording head substrate according to claim 1, wherein at least a part of the supporting substrate around the electric heat exchange element is made of a porous material. 6. A method for manufacturing a recording head substrate, wherein at least a part of the supporting substrate around the electric heat exchange element according to claim 1 is made porous by anodization. 7. The recording head substrate according to claim 5, wherein the porous material is silicon. 8. A method of manufacturing a recording head substrate according to claim 5, wherein the porous silicon of claim 7 is formed by anodization. 9. The recording head substrate according to claim 1, wherein the electric heat exchange element and the drive element are formed on a semiconductor layer on an insulating layer. 10. The method of manufacturing a recording head substrate according to claim 2, wherein the electric heat exchange element and the driving element are formed on a semiconductor layer on an insulating layer. 11. The recording head substrate according to claim 9, wherein the insulating layer according to claim 9 or 10 is a silicon oxide layer. 12. The semiconductor layer according to claim 9 or 10 is a single crystal silicon layer.
Or the recording head substrate as described in 10 above. 13. The semiconductor layer according to claim 9 or 10 is a polycrystalline silicon layer.
Or the recording head substrate as described in 10 above. 14. The semiconductor layer according to claim 9 or 10 is an amorphous silicon layer.
Or the recording head substrate as described in 10 above. 15. A plurality of electrothermal exchange elements, a plurality of drive functional elements for driving each of the electrothermal exchange elements, and a plurality of connecting the drive functional elements and the electrical heat exchange elements, respectively, by photolithography. In a recording head substrate having a wiring electrode and an insulating film provided on the wiring electrode on a substrate, at least a part of the periphery of the electrothermal exchange element is hollowed out. . 16. The recording head substrate according to claim 15, further comprising the step of hollowing out at least a part of the periphery of the electrothermal exchange element. Manufacturing method. 17. The recording head substrate according to claim 15, wherein the hollowing is performed between the first electric heat exchange element and the second electric heat exchange element. 18. The method of manufacturing a recording head substrate according to claim 16, wherein photolithography is used in the hollowing step. 19. The method according to claim 2, wherein the substrate material is removed by using a TMAH (tetramethylammonium hydroxide) solution.
10. A method of manufacturing a recording head substrate according to any one of 3, 4, and 9. 20. The substrate material removal according to claim 2 is performed by using a KOH solution.
10. A method of manufacturing a recording head substrate according to any one of 3, 4, and 9.