JPH07201855A - Semiconductor device - Google Patents

Abstract

(57) [Summary] [Object] The present invention relates to a semiconductor device having an elongated conductor film such as a guard ring used for improving moisture resistance in a region between a peripheral edge of a semiconductor chip and a wiring pad. The external stress that causes cracks in the guard ring is reduced when the chip is molded and sealed, the characteristic defects due to the cracks are improved, and the moisture resistance is improved. [Structure] A guard ring 4 made of a conductive film 3 provided in a region between a peripheral edge of a semiconductor chip 1 and a wiring pad 2 has a meandering bent or curved pattern.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having an elongated conductor film on the periphery of a semiconductor substrate, and more particularly to a technique for forming a guard ring used for improving moisture resistance.

[0002]

2. Description of the Related Art FIG. 3 is an explanatory view of a conventional example. In the figure, 1 is a semiconductor chip, 2 is a wiring pad, 3 is a conductive film,
4 is a guard ring, 9 is four corners, and 10 is a slit.

Conventionally, when the semiconductor chip 1 is sealed with a mold resin, the semiconductor chip 1 as shown in FIG.
In the pattern of the linear guard ring 4 formed of the conductive film 3 provided in the region between the peripheral edge of the semiconductor chip 1 and the wiring pad 2, a strong stress due to the molding resin is exerted particularly on the four corners 9 of the peripheral edge of the semiconductor chip 1, and It is known that cracks occur in the passivation film (not shown) that covers the conductive film 3 of the guard ring 4 on and around the guard ring 4 provided at the periphery of the guard ring 4.

Therefore, in JP-A-2-77132, as shown in FIG. 3B, a slit 10 extending in the guard ring 4 and parallel to the ring direction is provided to improve the above-mentioned drawbacks. There is.

[0005]

However, with the miniaturization of semiconductor devices, the width of the guard ring has become very narrow, and the slits make the wiring width narrower. Contrary to the purpose, the passivation film The cracks have caused wire breaks in the guard ring.

In view of the above points, the present invention achieves improvement of characteristic defects and improvement of moisture resistance of a passivation film on a guard ring at the time of molding resin molding due to cracks and the like due to external stress. It is an object of the present invention to provide a semiconductor device capable of achieving the above.

[0007]

FIG. 1 is a diagram for explaining the principle of the present invention. In the figure, 1 is a semiconductor chip, 2 is a wiring pad, 3 is a conductive film, 4 is a guard ring, 5 is a linear pattern, and 6 is a bent portion.

In order to solve the above-mentioned problems, it is advisable to shorten the linear pattern 5 and provide a plurality of bent portions 6 in order to reduce the linear portion of the guard ring 4 provided on the periphery of the chip.

That is, as shown in FIG. 1, the object of the present invention is that the guard ring 4 formed of the conductive film 3 provided in the region between the peripheral edge of the semiconductor chip 1 and the wiring pad 2 is bent in a meandering shape, or Due to the curved pattern, the guard ring 4 is composed of a plurality of conductive films 3 and the upper and lower conductive films 3 are composed of the interlayer insulating film 7 as will be described later in the embodiment and FIG. Since the conductive films 3 are connected to each other through the through holes 8, the conductive film 3 of the plurality of layers is further formed by stacking at least the conductive film 3a of the upper layer so as to cover the conductive film 3b of the lower layer. It

[0010]

According to the means of the present invention, since the linear pattern of the conductive film of the guard ring is shortened and a plurality of bent portions are provided, the external stress is divided into the short linear pattern portions, and the large stress is increased. Is dispersed, and a plurality of bent portions are provided, and the principle of the spring is used to absorb stress and reduce the occurrence of cracks.

[0011]

FIG. 2 is a schematic sectional view of an embodiment of the present invention. In the figure, 1 is a semiconductor chip, 2 is a wiring pad,
3 is a conductive film, 3a is an upper conductive film, 3b is a lower conductive film, 4
Is a guard ring, 5 is a linear pattern, 6 is a bent portion, and 7 is
Is an interlayer insulating film, 8 is a through hole, 9 is a four corner portion, 11 is Si
The substrate.

An embodiment of the present invention will be described with reference to FIG. As shown in FIG. 2A, an upper layer conductive film 3a made of a poly-Si film and a lower conductive film 3b made of an Al film are used for the guard ring 4, and interlayer insulation made of a SiO ₂ film is provided at intervals of about 50 μm. A through hole (conduction window) 8 is provided in the film 7 to connect the upper conductive film 3a and the lower conductive film 3b.

The linear pattern 5 of the guard ring 4 is made as short as possible and has many bent portions 6. The inner angle of the bent portion 6 is 135 °, but the bent portion 6 is polygonal, and a shape close to the circumference is more effective.

FIG. 2B is a sectional view taken along the line AA 'in FIG. The upper-layer conductor film 3a of the second layer covers the outside of the lower-layer conductor film 3b of the first layer. In such a structure, for example, even if a large stress is applied from the four corners 9 of the chip, the pattern of the guard ring 4 is dispersed in the short linear pattern 5, and the a to a ″ series, and
The series of c to c ″ acts as a spring, and cracks in a passivation film (not shown) covering the lower conductive film 3b,
It is possible to prevent disconnection of the guard ring 4 due to it.

[0015]

According to the present invention, even with a thin guard ring in which it is difficult to form a slit, the stress applied to the passivation film can be relieved by forming a short straight portion and a plurality of bent portions, so that the guard ring can be relaxed. Decrease the disconnection rate of
It is possible to improve the characteristic failure due to the external stress of the semiconductor device and improve the moisture resistance, which remarkably contributes to the improvement of the reliability of the semiconductor device.

[Brief description of drawings]

FIG. 1 is an explanatory view of the principle of the present invention.

FIG. 2 is an explanatory diagram of an embodiment of the present invention.

FIG. 3 is an explanatory diagram of a conventional example.

[Explanation of symbols] 1 semiconductor chip 2 wiring pad 3 conductive film 3a upper conductive film 3b lower conductive film 4 guard ring 5 linear pattern 6 bent portion 7 interlayer insulating film 8 through hole 11 Si substrate

 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Shinji Nagai 1844-2, Kozoji-cho, Kasugai-shi, Aichi Prefecture

Claims (3)

[Claims] 1. A peripheral edge of a semiconductor chip (1) and a wiring pad
A semiconductor device characterized in that a guard ring (4) formed of a conductive film (3) provided in a region between (2) has a meandering curved or curved pattern. 2. The conductive film in which the guard ring (4) has a plurality of layers.
2. The semiconductor device according to claim 1, wherein the conductive film (3) is formed of (3) and is connected to each other through the through hole (8) of the interlayer insulating film (7). 3. The conductive film (3) of a plurality of layers is laminated so that at least the conductive film (3a) of the upper layer covers the conductive film (3b) of the lower layer. The semiconductor device described.