JPH07199229A - Mim element, active matrix substrate and liquid crystal display device - Google Patents

Abstract

PURPOSE:To prevent peeling of conductors constituting electrodes and an insulator layer, to eliminate a change in characteristics and to improve long-term stability and reliability by forming an adhesive layer having adhesive power to the conductors and the insulator layer between the first conductor and/or the second conductor and the insulator layer. CONSTITUTION:This MIM element has the insulator layer 3 between the first conductor (lower electrode) 1 and the second conductor (upper electrode) 4 and has the adhesive layer 2 having adhesive power to the first and second conductors 1, 4 and the insulator layer 3 between the first conductor 1 and/or the second conductor 4 and the insulator layer 3. The adhesive layer 2 is preferably composed of a material having the good adhesive power to the first conductor 1 and/or the second conductor 4 and having the high adhesive power to the adhesive layer 2 of the insulator layer 3. Metals or alloys which are undesirable as the first conductor 1 because of an increase of wiring resistance but exhibit the high adhesive power to the insulator layer 2, or alloys or mixed crystals and mixtures mixed at the arbitrary ratio of the first conductor 1 with the insulator 2 are adequately used as such material.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix substrate, and more particularly, to an active matrix substrate that can be suitably used for a word processor, a personal computer, a flat panel display such as an electronic book and the like, and particularly an active matrix useful as a switching element of a liquid crystal display device. The present invention relates to a substrate and a liquid crystal display device using the active matrix substrate.

[0002]

2. Description of the Related Art In recent years, liquid crystal display devices are thin, lightweight, and have low power consumption, so that the market as a display is rapidly expanding. Especially OA
There is a strong demand for the use of a large-area liquid crystal display in devices and TVs. Therefore, in the active matrix system, a switching element is provided for each pixel to apply a voltage. A thin film two-terminal device is often used as one of the switching devices. This is because the thin film two-terminal element exhibits a non-linear current-voltage characteristic suitable for switching. In the conventional two-terminal element, a metal electrode of Al, Ta, Ti, Cr or the like is provided as a lower electrode on an insulating substrate such as glass, and an oxide, nitride or insulating film of the metal is provided thereon. A as the upper electrode
MIM (Meta) with metal electrodes such as 1, Ni, Cr, etc.
An l-Insulator-Metal) element and the like are known. When performing halftone display of the liquid crystal display device using the MIM element, the voltage applied to the liquid crystal is charged by the time constant C _LC · R _ON (liquid crystal capacitance · ON resistance of the MIM element) within the scanning period of a frame. The liquid crystal is driven by this. Further, in particular, a thin film two-terminal element using a metal oxide as an insulating film (JP-A-57-196589 and 62-62).
No. 333), the insulating film is formed by anodic oxidation or thermal oxidation of the lower electrode, so the process is complicated, high temperature heat treatment is required, and the controllability (film quality and film quality) The uniformity and reproducibility of thickness are poor, and because the substrate is limited to heat-resistant materials, and because the insulating film is made of metal oxide with constant physical properties, it is possible to freely change the material and characteristics of the element. There is a drawback that it cannot be done and the degree of freedom in design is narrow. This means that it is difficult to design and manufacture a device that sufficiently satisfies the specifications from the liquid crystal display device using the active matrix substrate.
If the film controllability is poor, I
There is also a problem that the symmetry of the −V characteristic and the IV characteristic (the current ratio between the positive bias and the negative bias) becomes large. In addition, when the MIM element is used in a liquid crystal display device, the liquid crystal part capacitance / MIM element capacitance ratio is generally desired to be 10 or more, but in the case of a metal oxide, the element capacitance is large because the dielectric constant is large, and therefore the element capacitance is It requires reduction, that is, fine processing for reducing the element area. Further, in this case, there is also a problem that the insulating film is mechanically damaged in a rubbing process before encapsulating the liquid crystal material and the yield is reduced together with the fine processing. The twisted nematic and super twisted nematic liquid crystal display devices utilize the birefringence change of the nematic phase of liquid crystal due to voltage. In a normal twisted nematic liquid crystal display device, an alignment layer is provided on the surface in advance, and the upper and lower substrates that have been subjected to the alignment treatment with a rubbing cloth made of cotton, nylon, tetron, etc. are sealed and the alignment treated surface is placed inside. An empty cell is prepared, and liquid crystal is injected through the injection port. Generally, in order to maintain the space between the substrates of the liquid crystal display element, spherical or rod-shaped spacers made of plastic or glass are dispersed on the substrate after the alignment treatment, or projections are provided on the non-pixel portions. In the prior art, when manufacturing an active matrix substrate, depending on the combination of the first conductor and the insulating layer, a vapor deposition method, a sputtering method, a C method, or the like may be performed on the first conductor having a pattern formed in a predetermined shape.
VD (Chemical Vapor Deposition)
ion, chemical vapor deposition) method or the like to form an insulator layer, the adhesion of the insulator layer may be insufficient and film peeling may occur. Alternatively, after completion of the liquid crystal display device, microscopic peeling may occur gradually and the reliability over time may deteriorate.

[0003]

An object of the present invention is to provide a MIM element in which a conductor forming an electrode of an MIM element and an insulating layer are prevented from being separated from each other, and by using the MIM element, there is no characteristic change and long-term stability and reliability. It is an object of the present invention to provide an improved active matrix substrate and liquid crystal display device.

[0004]

The present invention relates to a MIM element in which an insulator layer is interposed between a first conductor (lower electrode) and a second conductor (upper electrode), and the first conductor and / or the second conductor and the insulator layer are The above-mentioned object is achieved by interposing an adhesive layer showing adhesion to the conductor and the insulator layer between them or improving the adhesion of the surface of the first conductor to the insulator layer before forming the insulator layer. did. The adhesive layer of the MIM element in the present invention is preferably composed of a substance having a good adhesive force to the first conductor and / or the second conductor and a strong adhesive force to the adhesive layer of the insulator layer. Is a metal or alloy that exhibits strong adhesion to the insulator as a base of the insulator layer even if it cannot be preferably used as the first conductor due to an increase in wiring resistance, or any of the insulator and the first conductor. An alloy, a mixed crystal, or a mixture mixed in the ratio of is preferably used. Alternatively, an insulating or semi-insulating thin film which does not show good voltage-current characteristics and is not preferable as the insulating layer of the active matrix substrate but shows good adhesion to the first conductor can be used. The adhesive layer is preferably composed of a material having an element selected from the constituent elements of the material forming the conductor and the insulator layer as a good adhesive force. In order to further strengthen the adhesive force between the adhesive layer and the insulator layer, dozens of degrees Celsius to several hundred degrees Celsius after the adhesive layer is formed
Mutual diffusion and permeation of the adhesive layer and the first conductor can be promoted by applying a heat treatment or plasma treatment to some extent. Alternatively, before forming the insulator layer, the first conductor surface is
r, N ₂ , H ₂ etc. plasma treatment, acid cleaning,
The adhesion of the insulator layer to the first conductor can also be improved by increasing the cleanliness of the outermost surface by irradiating ultraviolet rays or ozone, activating the surface, or increasing the surface irregularities. . By providing an adhesive layer between the first conductor and / or the second conductor and the insulator layer as described above, the first conductor / adhesive layer, the adhesive layer / insulator layer, the insulator layer / second conductor, etc. It is possible to prevent the peeling of the insulating layer because the adhesive force at the interface of the active matrix substrate can be increased, and the long-term stability and reliability can be improved without changing the characteristics after completion of the active matrix substrate or the liquid crystal display device. However, since an adhesive layer may be provided between the first conductor and the insulator layer, the current-voltage characteristics of the device may become asymmetric between positive and negative voltages. By providing a second adhesive layer made of substantially the same material as the insulating layer between the insulator layer and the second conductor, the symmetry of the device characteristics is improved, and the display characteristics when driving the liquid crystal in the liquid crystal display device. And reliability can be further improved. The insulator layer and the adhesive layer are usually processed into a predetermined shape by photolithography, and at that time, the same resist pattern is used to continuously form a film and simultaneously etch it, thereby increasing the number of steps. Can be reduced and productivity can be improved. Further, in particular, by using a hard carbon film as the insulating layer and the adhesive layer, sufficient adhesive force to the first conductor and / or the second conductor necessary for the adhesive layer can be obtained, and the insulating layer can be used for controlling the device characteristics. In addition to having a wide range, it can be formed at a low temperature and in a simple process compared to other insulating films, and by using an insulating film with a low dielectric constant excellent in film controllability and mechanical strength, a wide range can be obtained. Device design is possible. Further, it is possible to provide a liquid crystal display device in which the margin of the liquid crystal drive voltage is widened and which can display a multi-gradation.

The insulating layer of this active matrix substrate is made of SiNx, SiOx, SiCx, Al ₂ O ₃ , Ta ₂
O ₃ , hard carbon, polyimide, polyethylene, polystyrene and the like can be formed by a method such as sputtering, vapor deposition, anodic oxidation, plasma CVD, plasma polymerization or coating. The insulator layer in the active matrix substrate of the present invention has a relatively physical property (ε · ρ)
It is advantageous that it is formed of a hard carbon film that can be freely controlled. By using the hard carbon film as the insulator layer, the element characteristic control range is wide, and in addition, it can be formed at a low temperature and in a simple process as compared with other insulator layers. Further, when a hard carbon film is used as a layer forming the insulating film, this film is produced by 1) a vapor phase synthesis method such as a plasma CVD method, so that the physical properties can be controlled in a wide range depending on the film forming conditions, and thus the device design 2) It has a high degree of freedom. 2) It is hard and can be made into a thick film, so it is not susceptible to mechanical damage, and pinholes can be expected to be reduced by increasing the film thickness. 3) A good quality film can be obtained even at low temperatures near room temperature. Since it can be formed, there is no restriction on the substrate material. 4) It is suitable for thin film devices because it has excellent uniformity in film thickness and film quality. 5) It has a low dielectric constant, so it requires advanced fine processing technology. Therefore, the thin-film two-terminal element using such an insulating film is suitable as a switching element for liquid crystal display.
When the current-voltage characteristic (IV characteristic) of the thin film two-terminal element on the active matrix substrate shown in FIGS. 1 and 2 is examined, this characteristic is approximately expressed by the following conductive equation. It

[Equation 1] I: current V: applied voltage κ: conductivity coefficient β: pool Frenkel coefficient n: carrier density μ: carrier mobility q: electron charge amount Φ: trap depth ρ: specific resistance d: insulating film thickness k: Boltzmann constant T: Atmospheric temperature ε: Dielectric constant of insulating film

Next, the hard carbon film suitably used as the insulating film in the present invention will be described in detail. This film is a hard carbon film (i.e., amorphous and / or microcrystalline) containing carbon and hydrogen atoms as main texture-forming elements.
-C film, diamond-like carbon film, amorphous diamond film, and diamond thin film). One characteristic of the hard carbon film is that it is a vapor phase growth film, and as described later, its physical properties can be controlled in a wide range depending on the film forming conditions. Therefore, even if it is called an insulating film, its resistance value covers the region from the semi-insulator to the insulator, and in this sense, the thin film two-terminal element of the present invention is MI.
Not only the M element, but also unexpectedly, for example, the MSI element (Meta1-Sem-Insulator) or SIS referred to in JP-A-61-260219.
It is also positioned as (semiconductor-insulator-semiconductor, in which "semiconductor" is doped with impurities at a high concentration). In addition, in order to further expand the physical property control range in this hard carbon film, at least 5 atomic% or less of Group III elements of the periodic table as one of the constituent elements relative to all the constituent elements, also the same Group IV element 35 atomic% or less, also Group V element 5 atomic% or less, alkaline earth metal element 5 atomic% or less, alkali metal element 5 atomic% or less, nitrogen atom 5 atomic% or less, oxygen atom 5 atomic% %, A chalcogen element may be included in an amount of 35 atomic% or less, or a halogen element may be included in an amount of 35 atomic% or less. The amount of these elements or atoms can be measured by a conventional elemental analysis method, for example, Auger analysis. Alternatively, this amount can be adjusted to some extent by the amount of other compound contained in the source gas and the film forming conditions. An organic compound gas, particularly a hydrocarbon gas, is used to form the hard carbon film in this way. The phase state of these raw materials does not necessarily have to be a gas phase at room temperature and atmospheric pressure, and a liquid phase or a solid phase can be used as long as it can be vaporized by being melted, evaporated, sublimated by heating or decompressing. Examples of the hydrocarbon gas as the raw material gas include paraffin hydrocarbons such as CH ₄ , C ₃ H ₈ and C ₄ H ₁₀ , olefin hydrocarbons such as C ₂ H ₄ , diolefin hydrocarbons and acetylene carbon. hydrogen,
Furthermore, a gas containing at least all hydrocarbons such as aromatic hydrocarbons can be used.

As a method of forming a hard carbon film from a raw material gas in the present invention, a film formation active species is formed through a plasma state generated by a plasma method using direct current, low frequency, high frequency, or microwave. The above method is preferable, but a method utilizing a magnetic field effect is more preferable for causing deposition under a low pressure for the purpose of increasing the area, improving the uniformity and / or forming a film at a low temperature. In addition, active species can also be formed by thermal decomposition at high temperature. Besides, it may be formed through an ion state generated by an ionization vapor deposition method, an ion beam vapor deposition method or the like, or may be formed from neutral particles generated by a vacuum vapor deposition method, a sputtering method or the like. However, it may be formed by a combination thereof. In the case of plasma CVD, an example of the deposition conditions of the hard carbon film thus manufactured is as follows. RF output: 0.01 to 50 W / cm ² Pressure: 10 ^{−3 to} 10 Torr Deposition temperature: Room temperature to 950 ° C., preferably room temperature to 300 ° C. The raw material gas is decomposed into radicals and ions by this plasma state and reacts with each other, so that amorphous (amorphous) and microcrystalline (crystal size is several nm to several nm) consisting of carbon atoms C and hydrogen atoms H on the substrate. a hard carbon film containing at least one of Table 1 shows various characteristics of the hard carbon film.

[0008]

[Table 1] Note) Measurement method: Specific resistance (ρ): Determined from IV characteristics of a coplanar cell. Optical bandgap (Egopt): The absorption coefficient (α) is obtained from the spectral characteristics, and is determined from the relationship of (αhν) ^1/2 = β (hν-Egopt). Amount of hydrogen in film [C (H)]: 29 from infrared absorption spectrum
The peak around 00 cm ^-1 is integrated and the absorption cross section A is multiplied to obtain. That is, [C (H)] = A · ∫α (ν) / ν · dν SP ³ / SP ² ratio: the infrared absorption spectrum is decomposed into Gaussian functions assigned to SP ³ and SP ² , respectively, and its area Calculate from the ratio. Vickers hardness (H): According to a micro Vickers meter. Refractive index (n): By ellipsometer. Defect density: According to ESR.

The hard carbon film thus formed was analyzed by the IR absorption method and the Raman spectroscopy, and the results are shown in FIG.
As shown in FIG. 5 and FIG. 5, it has been clarified that interatomic bonds in which carbon atoms form a hybrid orbital of SP ^{3 and} a hybrid orbital of SP ² are mixed. The ratio of SP ³ bond to SP ² bond can be roughly estimated by separating peaks in the IR spectrum. IR spectrum shows 2800-3150c
The spectra of many modes are measured overlapping with m ⁻¹ , but the attribution of the peaks corresponding to each wave number is clear, and the peaks are separated by the Gaussian distribution as shown in FIG. SP ³ / SP ² can be known by calculating the area and calculating the ratio. Further, the hard carbon film is in an amorphous state (aC: H) according to X-ray and electron beam diffraction analysis, and / or about 1
It can be seen that it is in an amorphous state containing fine crystal grains of about 0 to several μm. Plasma C, which is generally suitable for mass production
In the case of the VD method, the smaller the RF output, the higher the specific resistance value and hardness of the film, and the lower the pressure, the longer the life of active species. And the specific resistance and hardness tend to increase. Furthermore, since the plasma density decreases at low pressure, the method of utilizing the magnetic field confinement effect is particularly effective for increasing the specific resistance. Furthermore, since this method (plasma CVD method) has the characteristic that a good quality hard carbon film can be similarly formed even at a relatively low temperature condition of room temperature to 150 ° C., the low temperature of the thin film two-terminal device manufacturing process is low. It is most suitable for Therefore, the degree of freedom in selecting the substrate material to be used expands,
It has a feature that a uniform film can be obtained because the substrate temperature can be easily controlled. Since the structure and physical properties of the hard carbon film can be controlled in a wide range as shown in Table 1,
There is also an advantage that the device characteristics can be freely designed. Furthermore, the dielectric constant of the film is 3 to 5, which is T used in the conventional MIM.
Since it is smaller than a ₂ O ₅ , Al ₂ O ₃ , SiNx, etc., when making an element with the same electric capacity, a large element size is sufficient, so microfabrication is not required so much, and the yield is improved. (The _LCD / _MIM capacitance ratio needs to be about C _LCD / C _MIM = 10: 1 due to the driving conditions.) Furthermore, since the hardness of the film is high, the element is less damaged by the rubbing process when the liquid crystal material is filled, and the yield is improved also from this point. A hard carbon film suitable as a thin film two-terminal element for driving a liquid crystal has a film thickness of 100 to 80 depending on driving conditions.
It is advantageous that 00Å and the specific resistance are in the range of 10 ⁶ to 10 ¹² Ω · cm. In consideration of the margin between the driving voltage and the withstand voltage (dielectric breakdown voltage), the film thickness is preferably 200 Å or more, and color unevenness caused by the step (cell gap difference) between the pixel portion and the thin film two-terminal element occurs. Since it is desirable that the film thickness is 6000 Å or less in order to prevent practical problems, the hard carbon film has a film thickness of 200 to 6
More preferably, the specific resistance is 000Å and the specific resistance is 5 × 10 ⁵ to 10 ¹² Ωcm. The number of defects in the device due to pinholes in the hard carbon film increases as the film thickness decreases, and becomes particularly noticeable below 300 Å (the number of defects exceeds 1%).
In addition, the in-plane uniformity of film thickness (and eventually the uniformity of device characteristics) cannot be ensured (the film thickness control accuracy is limited to about 30Å, and the film thickness variation exceeds 10%). Is more preferably 300Å or more. In addition, the hard carbon film is less likely to be peeled off due to stress, and the duty ratio is lower (desirably 1/10).
It is more preferable that the film thickness is 4000 Å or less in order to drive at a temperature of 00 or less). Taking these factors into consideration, it is more preferable that the thickness of the hard carbon film is 300 to 4000 Å and the specific resistance is 10 ⁷ to 10 ¹¹ Ω · cm.

The manufacturing method and structure of the MIM element and active matrix substrate of the present invention will be specifically described below with reference to FIG. Al, Ta, Ti, C on the substrate 6 such as glass, plastic plate or plastic film
A conductive thin film of r, Ni, Au, Cu, Ag, W, Mo, Pt or the like is formed to a thickness of several tens to several hundreds of nm and etched into a predetermined pattern to form the lower electrode 1. Next, as an adhesive layer, Al, Ta, Ti, Cr, Ni, Au, Cu, A
g, W, Mo, Pt, etc. simple substance or alloy metal thin film, or oxide, nitride, carbide or SiN of the above metal
Insulating films such as x, SiOx, SiCx, hard carbon, polyimide, polyethylene, polystyrene, etc.
It is formed into a thickness of m and is etched into a pattern including at least a portion where the lower electrode and the upper electrode are laminated, and the insulating film 2 is formed into a film having a thickness of several tens to several hundreds of nm and is etched into a predetermined pattern. Finally, as the upper electrode 3, Al, T
a, Ti, Cr, Ni, Co, Fe, Au, Cu, A
A conductive thin film of g, W, Mo, Pt or the like is formed to a thickness of several tens nm to several hundreds nm, and is etched into a predetermined pattern to form an upper electrode. Subsequently, ITO is used as the display electrode 4.
(Indium Tin Oxide), ZnO: A
l, In ₂ O ₃ , SnO ₂ or the like is formed into a transparent conductive thin film with a thickness of several tens to several hundreds of nm and etched into a predetermined pattern. As a method for forming each thin film, a conventional thin film forming method such as sputtering, vapor deposition, or CVD can be adopted. The active matrix substrate thus obtained has an insulator layer between a first conductor (lower electrode) and a second conductor (upper electrode) as shown in FIG. In the active matrix substrate that is connected to
An adhesive layer is provided between the first conductor and the insulator layer. Next, the present invention will be specifically described with reference to examples, but the present invention is not limited thereto.

[0011]

【Example】

Example 1 As shown in FIG. 1, an active matrix was provided on a Pyrex glass substrate as follows. First, Ti was deposited by sputtering to a thickness of about 50 nm and then patterned to form the lower electrode 1. Then, TiCx is formed to a thickness of about 10 nm as an adhesive layer 2 by a sputtering method and etched in a pattern including an element portion, and then a plasma CVD is used as an insulator layer 3 to form a hard carbon film of 20 nm.
0 nm was deposited. The conditions for forming the hard carbon film at this time are as follows. Pressure: 0.05 Torr CH ₄ Flow rate: 20 SCCM RF power: 0.5 W / cm ² This was patterned by dry etching. Then, Cr is deposited thereon by a sputtering method to have a thickness of about 80 nm, and is etched in a pattern intersecting with the lower electrode to form an upper electrode 4. Finally, ITO is sputtered for about 6 nm.
The display electrode 5 was formed by depositing it to a thickness of 0 nm and performing wet etching. In this embodiment, since the compound of the first conductor and the insulating layer is used as the adhesive layer, the adhesive force at the interface between the adhesive layer / first conductor and the first conductor / insulating layer is strong,
It was possible to fabricate an active matrix substrate with high reliability without any peeling of the insulating layer.

Example 2 As shown in FIG. 1, an active layer was formed on a Pyrex glass substrate.
The bus matrix was provided as follows. First steam Cr
After deposition to a thickness of about 50 nm by the deposition method, patterning is performed and the bottom electrode is
Pole 1 was formed. On top of that, a hard carbon film is used as the adhesive layer 2.
Of about 10 nm was formed by using the plasma CVD method. this
The conditions for forming the hard carbon film at that time are as follows. Pressure: 0.01 Torr CH_Four Flow rate: 20 SCCM RF power: 3.0 W / cm²  Next, dry etching with a pattern including the element part,
After that, hard carbon is used as the insulator layer 3 by plasma CVD.
An elementary film was deposited to 100 nm. Deposition of hard carbon film at this time
The conditions are as follows. Pressure: 0.05 Torr CH_Four Flow rate: 20 SCCM RF power: 0.5 W / cm² This was patterned by dry etching. continue
Ni is deposited on this by about 80 nm by sputtering method
Then, etch in a pattern that intersects the lower electrode and
Pole 4 is formed, and finally ITO is sputtered to about 6
Deposited to a thickness of 0 nm, wet-etched, and displayed
The electrode 5 was formed. In this embodiment, the first conductive layer is used as an adhesive layer.
Manufacture a hard carbon film under film forming conditions with strong adhesion to the body
And then using an insulator layer that also contains a lot of carbon
For adhesive layer / first conductor, first conductor / insulating layer respectively
Strong adhesion at the interface, no peeling of the insulation layer, and reliable
To make highly active matrix substrates
did it.

Example 3 In Example 1, an adhesive layer and an insulating layer were continuously formed,
Moreover, as shown in FIG. 2, by using the same resist pattern and performing dry etching at the same time, the manufacturing process of the active matrix substrate could be simplified.

Example 4 In Example 2, TiCx was formed under the same conditions as the adhesive layer 2 after dry etching of the insulator layer as shown in FIG.
After etching into substantially the same shape, an upper electrode was formed. As a result, the positive / negative symmetry of the current-voltage characteristics of the thin film two-terminal element becomes extremely close to 1, and when this is used as a liquid crystal display device, a DC bias is not applied to the liquid crystal and the liquid crystal deteriorates and deteriorates. Therefore, the reliability as a liquid crystal display device is improved.

Example 5 When an insulating layer and an upper electrode were formed after applying a heat treatment at 200 ° C. for about 2 hours after forming the adhesive layer in Example 2, carbon atoms diffused inside the lower electrode and the adhesive force was increased. As a result, the defect rate of the device is very small and the display quality of the liquid crystal display device is improved.

Example 6 As shown in FIG. 1, an active matrix was provided on a Pyrex glass substrate as follows. First, Al was deposited to a thickness of about 80 nm by sputtering and then patterned to form the lower electrode 1. On top of that, plasma CVD
An insulator layer is formed by the method, but the substrate and the lower electrode surface are exposed to H ₂ plasma for about 30 seconds before CH ₄ plasma is generated, and then a hard carbon film is deposited to 100 nm as an insulator layer 3 by using plasma CVD. did. The conditions for forming the hard carbon film at this time are as follows. Pressure: 0.05 Torr CH ₄ Flow rate: 20 SCCM RF power: 0.1 W / cm ² An active matrix substrate was produced in the same manner as in Example 1. In this example, if the hydrogen plasma treatment is not performed, the hard carbon film will be peeled off during the production of the active matrix substrate, but the surface treatment increases the adhesion of the insulator layer to the first conductor, and thus the active matrix substrate can be produced. did it.

Example 7 Example 2 of 640 × 480 pixels on Pyrex glass
A twisted nematic liquid crystal display device was manufactured using an active matrix substrate on which switching elements were formed, and a liquid crystal display device with high display performance with few defects due to no peeling of the insulating layer was obtained over a long period of time. .

[0018]

The MIM element of the present invention has few defects because the insulating layer is not peeled off for a long period of time, and a liquid crystal display device having high display performance is provided by using the element.

[Brief description of drawings]

FIG. 1 is a diagram schematically showing a configuration of an active matrix substrate of Example 1.

FIG. 2 is a diagram schematically showing a configuration of an active matrix substrate of Example 3.

FIG. 3 is a diagram schematically showing a configuration of an active matrix substrate of Example 4.

[Explanation of symbols]

 1 Lower Electrode (Ti) 2 Adhesive Layer (TiCx) 3 Insulator Layer (Hard Carbon Film) 4 Upper Electrode (Cr) 5 Display Electrode 10 Lower Electrode (Cr) 20 Adhesive Layer (Hard Carbon Film) 40 Upper Electrode (Ni )

Claims (10)

[Claims] 1. A MIM element having an insulator layer between a first conductor (lower electrode) and a second conductor (upper electrode), comprising a conductor and a conductor between the first conductor and / or the second conductor and the insulator layer. An active matrix substrate having an adhesive layer having an adhesive force to an insulating layer. 2. The MIM element according to claim 1, wherein the adhesive layer is made of a material having an element selected from the constituent elements of the material forming the conductor and the insulator layer. 3. The adhesive layer present between the first conductor and the insulator layer and the adhesive layer present between the second conductor and the insulator layer are made of substantially the same material. The MIM element according to claim 1 or 2. 4. The MIM element according to claim 1, wherein the insulating layer and the adhesive layer are formed in substantially the same shape. 5. The adhesive layer and the insulating layer are formed by continuously forming a film using the same resist pattern and simultaneously etching the film, according to claim 1, 2, 3 or 4. MIM element. 6. The adhesive layer and the first conductor are mutually diffused or permeated, and the adhesive layer and the first conductor are characterized in that:
The MIM element according to 4 or 5. 7. The MIM element according to claim 1, wherein the insulating layer and the adhesive layer are hard carbon films. 8. A MIM element having an insulator layer between a first conductor and a second conductor, wherein the surface of the first conductor is subjected to a treatment for improving adhesion to the insulator layer before forming the insulator layer. An MIM element characterized by being present. 9. An active matrix substrate in which the first conductor or the second conductor of the MIM element according to claim 1, 2, 3, 4, 5, 6, 7 or 8 is connected to a display electrode and formed on the substrate. . 10. A liquid crystal display device using the active matrix substrate according to claim 9.