JPH07183265A - Wafer processing equipment - Google Patents

Abstract

(57) [Summary] [Object] To provide a wafer processing apparatus of relatively high throughput capable of preventing an increase in the amount of a chemical solution used and uniformly cleaning the surface of a wafer in a relatively short time. [Constitution] The batch type vapor phase processing unit 2 accommodates a plurality of wafers and simultaneously cleans them with gas. The single-wafer type liquid phase processing unit 4 includes a holding member for holding one wafer, a nozzle for discharging a chemical solution to the wafer held by the holding member to process the wafer, and an ultraviolet light for the wafer held by the holding member. And an ultraviolet lamp for irradiating the. The wafer transfer unit 3 has a wafer transfer mechanism 7. The wafer transfer mechanism 7 transfers the wafer processed by the batch type vapor phase processing unit 2 to the single wafer type liquid phase processing unit 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer processing apparatus, and more particularly to a wafer processing apparatus for cleaning and removing impurities such as metal and organic substances attached to a wafer.

[0002]

2. Description of the Related Art In the semiconductor industry, it is required to clean a semiconductor substrate, that is, a wafer to an extremely high degree of purity, for example, to a level of impurities of 1 ppm or less. this is,
This is because even if a very small amount of impurities such as organic substances and metals adhere to the wafer, it diffuses inside the wafer in a heat treatment process or the like, which causes defective products. Therefore, various wafer cleaning apparatuses have been developed or proposed so far. The conventional wafer cleaning apparatus can be roughly classified into a batch-type processing apparatus that performs cleaning processing on a plurality of wafers at a time and a single-wafer processing apparatus that performs cleaning processing on each wafer.

In this batch type wafer processing apparatus, a cleaning tank is filled with a chemical solution consisting of an acid or an alkaline aqueous solution, a large number of wafers are immersed in the chemical solution, and the components of the chemical solution, the temperature and the immersion time are controlled. Cleaning and removing fine particles on the wafer surface and impurities such as organic substances and metals. Next, the chemicals and impurities are rinsed from the wafer with pure water, and then water is removed by centrifugal force. As described above, the batch type processing apparatus can clean a large number of wafers at one time, and is excellent in throughput and cost. On the other hand, a single-wafer processing apparatus attaches wafers one by one to a wafer chuck in a chamber and cleans the surface of one wafer in this chamber. It has an advantage that the surface can be uniformly and uniformly cleaned.

[0004]

However, in the conventional batch type processing apparatus, the size of the wafer tends to increase from 6 inches to 8 inches in recent years, so that the amount of the chemical solution used increases and the cost increases. There is a problem of being invited.
Further, the increase in the size of the wafer makes it difficult to uniformly clean the entire surface of the wafer, and there is also a problem that long-term cleaning is required for uniform cleaning. Further, the conventional single wafer processing apparatus has a problem that the throughput is extremely poor because one wafer is cleaned in the chamber.

Further, the conventional single wafer processing apparatus is
There is also a problem that the chemical solution in the chamber comes into contact with and corrodes the stainless steel rotary shaft of the wafer chuck, thereby contaminating the chemical solution and leaking the chemical solution from the rotary shaft. In order to solve this problem, it is conceivable to seal the rotary shaft with an oil seal or an O-ring having a high airtightness. However, such a seal member having high hermeticity causes other problems such as wear of the rotary shaft and increase of load on the motor for driving the rotary shaft.

Therefore, an object of the invention described in claim 1 is to provide a high throughput wafer processing apparatus capable of preventing an increase in the amount of chemicals used and uniformly cleaning the surface of a wafer in a relatively short time. To do. Further, an object of the invention described in claim 4 is to seal the rotary shaft against the reactive fluid in the chamber without using a seal member, thereby preventing corrosion of the rotary shaft and leakage of the reactive fluid. It is to provide a wafer processing apparatus capable of performing the above.

[0007]

In order to achieve this object, the invention described in claim 1 is a batch type vapor phase process which is sealed from the outside and accommodates a plurality of wafers and processes them simultaneously with gas. A unit, a holding member for holding one wafer, a chemical liquid ejecting unit for ejecting and processing a chemical liquid on the wafer held by the holding member, and an ozone generating unit for reacting ozone on the wafer held by the holding member. And a single-wafer type liquid phase processing unit hermetically sealed to the outside, and the wafer hermetically sealed to the outside and processed by the batch type vapor phase processing unit into the single-wafer type liquid phase processing unit. A wafer transfer unit for transferring the wafer is provided.

In this structure, the ozone generator has an ultraviolet lamp for irradiating the wafer held by the holding member with ultraviolet light in an oxygen atmosphere, and the holding member holds the outer peripheral edge of the wafer. It is preferable that the chemical liquid ejecting section has an upper nozzle and a lower nozzle that eject the chemical liquid on the front surface and the back surface of the wafer held by the holding member. It is preferable that the chemical solution discharge section intermittently discharges the chemical solution onto one wafer.

The invention described in claim 4 is a chamber,
A rotary shaft that penetrates the outer wall of the chamber and is rotatably supported so as to be slidable in the axial direction; and a wafer chuck that is attached to an upper portion of the rotary shaft and holds a wafer,
In a wafer processing apparatus for processing the wafer with a reactive fluid in the chamber, a cover having a through hole having an inner diameter slightly larger than the outer diameter of the rotating shaft, the rotating shaft passing through the through hole, A seal fluid injection hole that is bored in the cover and injects a seal fluid into a gap between the through hole and the rotation shaft, and is formed below the seal fluid injection hole, and communicates with the gap to form the gap. A sealed pressurizing chamber for applying a predetermined pressure to the seal fluid, wherein the sealing fluid injected into the gap prevents the reactive fluid in the chamber from flowing into the gap. It is a thing.

According to this structure, the cover further comprises a sliding member which is in contact with the outer periphery of the rotary shaft and which slides in the axial direction integrally with the rotary shaft. It has a large diameter hole connected to the through hole and having an inner diameter sufficiently larger than the inner diameter of the through hole, the large diameter hole is closed by the sliding member, and the closed pressurizing chamber is closed by the sliding member. It is desirable that the above-mentioned large diameter hole is formed. It is preferable that a portion of the rotating shaft facing the through hole is made of resin, and a portion of the rotating shaft facing the sealing member is made of metal.

[0011]

According to the invention described in claim 1, a plurality of wafers are accommodated in the batch type vapor phase processing unit, and these wafers are simultaneously processed with gas. At this time, the gas uniformly contacts the entire surface of the wafer, so that uniform processing is performed over the entire surface of the wafer without causing uneven processing on the entire surface of the wafer. The wafer processed by the batch type vapor phase processing unit is transferred to the single wafer type liquid phase processing unit by the wafer transfer unit. In this single-wafer type liquid phase processing unit, the holding member holds one wafer, and the held wafer is discharged with the chemical liquid by the chemical liquid discharge unit and is reacted with ozone by the ozone generation unit.

As described above, in the batch type gas phase processing unit, a plurality of wafers are processed at one time by gas, and in the single wafer type liquid phase processing unit, the wafers are processed one by one by the chemical liquid and ozone, so that the chemical liquid It is relatively small in use, improves overall throughput, and allows for uniform processing across the entire surface of the wafer. In particular,
Since the wafer is processed in the batch type vapor phase processing unit in advance and then in the single wafer type liquid phase processing unit, the processing time in the single wafer type liquid phase processing unit can be shortened.

In the invention described in claim 4, the seal fluid is introduced from the seal fluid injection hole into the gap between the through hole of the cover and the rotary shaft. The sealing fluid introduced into the gap is
Since the closed pressurizing chamber applies a predetermined pressure to the lower part of the gap, it flows upward in the gap and seals it to prevent the reactive fluid in the chamber from flowing into the gap. Thus, without using a sealing member, the rotary shaft is sealed by the sealing fluid to prevent corrosion of the rotary shaft due to the reactive fluid in the chamber and to prevent the reactive fluid from leaking through the rotary shaft. be able to.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of a wafer processing apparatus according to the present invention will be described below with reference to FIGS. In FIG. 1, a wafer processing apparatus 1 comprises a batch type vapor phase processing unit 2, a wafer transfer unit 3, a single wafer type liquid phase processing unit 4 and a wafer returning unit 5. Each unit 2, 3,
Numerals 4 and 5 have chambers which are hermetically sealed, and are separated from each other by a shielding plate (not shown). A wafer carrier 6 accommodating a plurality of wafers is placed in the chamber of the batch type vapor phase processing unit 2, and the wafers are processed by the hydrofluoric acid vapor filled in the chamber.

The wafer transfer unit 3 is a wafer transfer mechanism 7
The transfer mechanism 7 transfers the wafer from the batch type vapor phase processing unit 2 to the single wafer type liquid phase processing unit 4 and from the single wafer type liquid phase processing unit 4 to the wafer returning unit 5. As shown in FIG. 2, the single-wafer type liquid phase processing unit 4 has a lower casing 8 made of PTFE and an upper casing 9 made of PTFE which covers the lower casing 8. 8 and the upper housing 9 form a chamber. A wafer chuck 10 is arranged in each of the chambers 8 and 9, and the wafer chuck 10 has six holding rods 10 a projecting from the circumference at substantially equal angular intervals.
The wafer W is held by a.

The wafer chuck 10 is fixed to the upper end of a rotary shaft 11, which penetrates the lower housing 8 and is rotated and slid vertically by a drive source (not shown). An ultraviolet lamp 12 is installed above the wafer chuck 10 in the upper housing 9, and an ultraviolet light irradiation window 13 made of a synthetic quartz plate is arranged between the ultraviolet lamp 12 and the wafer chuck 10. In addition, this ultraviolet light irradiation window 13
A shutter 14 is installed between the ultraviolet lamp 12 and the ultraviolet lamp 12, and the shutter 14 is provided between the ultraviolet lamp 12 and the wafer W.
Adjust the amount of ultraviolet light that is applied to the.

The upper housing 9 has two gas supply pipes 15, 1
6 is attached, and one of the gas supply pipes 15 penetrates the ultraviolet light irradiation window 13, its outlet faces the surface of the wafer W, and ejects gas almost perpendicularly to the surface of the wafer W. The other gas supply pipe 16 is attached to the side wall of the upper housing 9,
The outlet is directed substantially tangentially to the side wall of the upper housing 9. An upper nozzle 17 for discharging a chemical solution is arranged inside the tip of the gas supply pipe 15, and the tip of the upper nozzle 17 faces the central portion of the surface of the wafer W. Further, the rotating shaft 11 has a tubular shape, and a lower nozzle 18 for discharging a chemical liquid is arranged in the internal space of the rotating shaft 11, and the tip of the lower nozzle 18 faces the central portion of the back surface of the wafer W. .
The bottom of the lower housing 8 has a first discharge hole 1 for exhaust and drainage.
9 is perforated, and a second exhaust hole 20 for exhausting and draining liquid is formed between the upper housing 9 and the lower housing 8.

Next, the operation of this embodiment will be described. Figure 1
At 6 a wafer carrier 6 containing a large number of wafers
However, when set in the chamber of the batch type gas phase treatment unit 2, this chamber is sealed and filled with pure nitrogen. When completely filled with pure nitrogen, hydrofluoric acid is injected at the bottom of the chamber. The injected hydrofluoric acid evaporates and fills the entire chamber, and decomposes the natural oxide film and metal impurities on the wafer surface to generate water-soluble fluoride on the wafer surface. After a lapse of a predetermined time, hydrofluoric acid or hydrofluoric acid vapor is discharged from the chamber, and thereafter, the shield plate between the batch type vapor phase processing unit 2 and the wafer transfer unit 3 is opened. The wafer transfer mechanism 7 takes out the lowermost wafer in the wafer carrier 6 and places it on the wafer chuck 10 of the single-wafer type liquid phase processing unit 4. At this time, the shielding plate between the wafer transfer unit 3 and the single-wafer type liquid phase processing unit 4 is opened, and the chamber upper housing 9 of the single-wafer type liquid phase processing unit 4 is lifted.

After one wafer W processed by the batch type vapor phase processing unit 2 is held by the wafer chuck 10, the upper housing 9 is covered with the lower housing 8 and the chambers 8, 9 are provided.
Seal. After this, the first and second discharge holes 19, 20
At the same time as exhausting the inside of the chambers 8 and 9 from the gas supply pipe 1
Pure nitrogen is supplied from the chambers 5 and 16 into the chambers 8 and 9. At this time, the gas supply pipe 16 ejects pure nitrogen along the side wall of the chamber 9, whereby the pure nitrogen flows spirally, so that the chambers 8 and 9 can be rapidly purged.

After this, the upper and lower nozzles 17, 18
Is intermittently sprayed with a chemical solution such as fluorosilicic acid on the front and back surfaces of the rotating wafer W. In addition to the above-mentioned fluorosilicic acid, ammonia, hydrochloric acid, hydrogen peroxide, choline, nitric acid, hydrofluoric acid, etc. can be used alone or in a mixture at an appropriate ratio. The chemical liquid sprayed on the front surface and the back surface of the wafer W flows toward the peripheral portion of the wafer W by the centrifugal force, and the first and second discharge holes 1
It is discharged to the outside from 9, 20. Since the chemical solution is intermittently discharged to the wafer W as described above, that is, intermittently,
Impurities on the wafer surface can be removed very effectively. More specifically, as shown in FIG. 3, when the chemical liquid Y is discharged onto the surface of the wafer W, a boundary layer 21 is formed in the immediate vicinity of the wafer surface, and the impurities F on the wafer surface are separated from the wafer surface. And diffuses into the boundary layer 21. However,
When the chemical liquid is continuously discharged, the chemical liquid in the boundary layer 21 easily stays there, and the continuously discharged chemical liquid flows over the boundary layer 21. Therefore, the impurity concentration in the boundary layer 21 increases, and the impurities reattach to the wafer W and are not effectively removed.

However, when the chemical solution Y is intermittently discharged as in the above embodiment, the chemical solution in the boundary layer 21 is centrifugally applied to the chemical solution in the boundary layer 21 due to the temporary interruption of the chemical solution discharge.
The impurities flow out from the wafer W. By repeating such intermittent chemical solution discharge, impurities on the wafer surface can be removed very effectively. When the cleaning with the chemical solution is completed, pure water is discharged from the nozzles 17 and 18 onto the front surface and the back surface of the rotating wafer W to wash away the chemical solution. After this pure water cleaning, the wafer W is dried by rotating the wafer chuck 10. These are performed in a pure nitrogen atmosphere. After this drying, the first and second gas supply pipes 1
5, 16 and the first and second exhaust holes 19, 20 are used to replace the chambers 8, 9 with a pure oxygen atmosphere and irradiate the surface of the wafer W in the pure oxygen atmosphere with ultraviolet light from the ultraviolet lamp 12. To do. By this ultraviolet light irradiation, ozone is generated and an oxide film of several atomic layers is generated on the wafer surface.

Next, after replacing the chambers 8 and 9 with a pure nitrogen atmosphere, the upper housing 9 is opened, the wafer transfer mechanism 7 takes out the wafer W from the wafer chuck 10 and places it on the wafer returning unit 5. It is accommodated in the uppermost stage in the empty wafer carrier 6. After that, the above-mentioned processing is sequentially repeated for the remaining wafers accommodated in the wafer carrier 6 in the batch type vapor phase processing unit 2. Figure 4
Shows a modified example of the wafer chuck, in which the wafer chuck 22 has a central hole and is rotatably supported by a bearing 23. A gear 24 is engraved on the outer periphery of the wafer chuck 22, and the gear 24 includes a drive gear 25 and an idle gear 26 driven by a motor (not shown).
And are engaged with each other. The lower nozzle holding shaft 27 is inserted through the central hole of the wafer chuck 22. When the drive gear 25 rotates, the wafer chuck 2 is moved through the gear 24.
2 rotates around the lower nozzle holding shaft 27.

FIG. 5 shows another example of the sequence in the batch type gas phase treatment unit 2 and the single-wafer type liquid phase treatment unit 4. By selecting various chemicals in the phase treatment unit 4, various wafer treatments can be performed under optimum conditions. Although the upper nozzle 17 and the lower nozzle 18 are fixed in the above-described embodiment, they can be configured to be movable in parallel with the wafer surface. Further, by adding an optical system for converting the ultraviolet light from the ultraviolet lamp 12 into a parallel light flux, the wafer surface can be uniformly irradiated. Further, instead of generating ozone by ultraviolet light, an ozone generator may be installed outside the chambers 8 and 9, and ozone may be supplied from the ozone generator to the chambers 8 and 9 when necessary. In addition, the single-wafer type liquid phase treatment unit 4
Further, it is also possible to arrange a plurality of chambers 8 and 9 side by side and process a plurality of wafers from the batch type vapor phase processing unit 2 in parallel. In the above embodiment, the front surface and the back surface of the wafer were simultaneously cleaned with the same chemical solution, but only the front surface may be cleaned. Further, the type of chemical solution can be changed between the front surface and the back surface, and the cleaning time can be changed. However, the simultaneous cleaning of the front surface and the back surface of the wafer has an advantage that the chemical solution can be prevented from flowing around to the opposite surface.

FIG. 6 shows an improved example of the structure of the rotating shaft for rotating the wafer chuck. The vacuum chuck 28 for sucking and holding the wafer W is fixed to the upper end of the rotating shaft 11 and the upper end of the rotating shaft 11. An O-ring 29 is installed between the vacuum chuck 28 and the vacuum chuck 28. The rotating shaft 11 includes an upper end portion 11a made of a chemical resistant resin, a metal having excellent wear resistance,
For example, the main body 11b is made of stainless steel.
A central hole 30 for a vacuum line is formed at the center of the rotary shaft 11, and the central hole 30 for the vacuum line is connected to a suction hole of a vacuum chuck 28. The outer circumference of the rotary shaft 11 is the cover 3
Surrounded by 1, this cover 31 is attached to the lower housing 8 which is part of the chamber. The cover 31 is made of a corrosion resistant material, preferably PTFE, and has a through hole 32 and a large diameter hole 33 having a diameter sufficiently larger than the through hole 32 at the center thereof. The large diameter hole 33 is located below the through hole 32 so as to be connected to the through hole 32, and
Penetrates the through hole 32 and the large diameter hole 33.
Since the inner diameter of the through hole 32 is set to be slightly larger than the outer diameter of the rotating shaft 11, there is a predetermined gap 32a between the rotating shaft 11 and the through hole 32, and 11
Can rotate without substantially contacting the inner wall of the through hole 32.

The cover 31 is provided with first and second sealing fluid injection holes 34 and 35, respectively, and the inner surface of the through hole 32 of the cover 31 extends in the circumferential direction as clearly shown in FIG. The ring-shaped grooves 36 and 37 and the spiral groove 38 that connects the grooves 36 and 37 are engraved. The sealing fluid injection holes 34 and 35 are connected to the grooves 36 and 37, respectively,
As a result, the gap 32 between the rotary shaft 11 and the through hole 32 is
It communicates with a. Further, the cover 31 has an upper groove 36.
A first seal fluid discharge hole 39 connected to is drilled.

A body 11b made of stainless steel for the rotating shaft 11
Is provided with a drive cylinder 40 that drives the rotary shaft 11 in the axial direction, that is, the vertical direction. A bearing 41 is attached to the drive cylinder 40, and the bearing 41 rotatably supports the rotary shaft 11. . A ring-shaped sliding member 42 is fixed to the upper flange portion of the drive cylinder 40 with a bolt or the like. The sliding member 42 is made of a corrosion resistant material, preferably PTFE, and an oil seal 43 is attached to the inner circumference thereof. Has been. The oil seal 43 is a main body portion 11b of the rotary shaft 11.
It abuts and seals it. Vacuum grease is used as the lubricant for the oil seal 43.
However, any lubricant or coolant can be used, not limited to vacuum grease. Further, an O-ring may be used instead of the oil seal 43.

The outer peripheral surface of the sliding member 42 is fitted to the inner peripheral surface of the large diameter hole 33 of the cover 31, and an O-ring 44 is interposed between the both. Thus, the sliding member 42 has the large-diameter hole 33.
Is sealed. A second seal fluid discharge hole 45 is formed in the outer wall of the large diameter hole 33 of the cover 31. A flow control valve (not shown) is connected to each of the first and second sealing fluid discharge holes 39 and 45. The sliding member 42 and the large-diameter hole 33 form a closed pressurizing chamber that applies a predetermined pressure to the gap 32a. Further, the rotary shaft 11 is
As illustrated, the wafer W is rotated while being moved to the lowermost end, and the wafer W is rotated via the vacuum chuck 28. In this state, a predetermined gap 46 is formed between the convex upper surface of the cover 31, the vacuum chuck 28 and the concave lower surface. The gap 46 serves as an outflow portion of the seal fluid from the gap 32a.

Next, the operation of this embodiment will be described. First
The second seal fluid injection holes 34 and 35 introduce an inert gas such as pure nitrogen gas or pure argon gas as a seal fluid into the gap 32a through the grooves 36 and 37. Since the inside of the large-diameter hole 33 is sealed, the sealing fluid that has flowed into the gap 32a rises in the gap 32a and the vacuum chuck 2
The seal fluid flows out of the lower surface of the chamber 8 into the chamber 8. The rise of the sealing fluid in the gap 32a is promoted by the pressure difference between the grooves 36 and 37.
More specifically, since the upper groove 36 is connected to the first seal fluid discharge hole 39, the seal fluid pressure of this groove 36 becomes lower than the seal fluid pressure direction of the lower groove 37, and this pressure is reduced. The difference helps raise the sealing fluid.

The outflow amount or outflow pressure of the seal fluid into the chamber 8 is determined by the first and second seal fluid discharge holes 3
It is adjusted to an optimum value by a flow rate control valve connected to 9,45. In this way, the seal fluid flowing out from the seal fluid outflow portion 46 prevents the cleaning chemical liquid or cleaning gas in the chamber 8 from coming into contact with the rotating shaft 11. Therefore,
The rotating shaft 11 is not substantially corroded by the cleaning chemical liquid or the cleaning gas. Further, since the upper end of the rotating shaft 11 is made of a chemical resistant resin material, even if the cleaning chemical or the cleaning gas in the chamber 8 comes into contact with the resin, the corrosion does not easily occur. According to the experiment, even when the wafer W was rotated at a rotation speed of 2000 rpm while the chamber 8 was filled with the hydrofluoric acid aqueous solution, no corrosion of the rotation shaft 11 or its drive system was observed.

As described above, since the rotary shaft 11 is sealed by the seal fluid against the cleaning chemical liquid or cleaning gas in the chamber 8, an oil seal for sealing the cleaning chemical liquid or cleaning gas is not required, and the rotary shaft 11 is No heavy load is applied. The main body portion 11b of the rotary shaft 11
Although an oil seal 43 is closely attached to the oil seal 43, this oil seal 43 does not seal the rotary shaft 11 against the cleaning chemical liquid or cleaning gas in the chamber 8, but simply seals the inside of the large diameter hole 33. Since it is for keeping it at a predetermined pressure, a large load is not applied to the rotary shaft 11. The cleaning fluid in the chamber 8 is a gas,
And if it is not desirable that the sealing fluid from the second sealing fluid injection holes 34, 35 mix with the cleaning fluid in the chamber 8, the amount of the sealing fluid flowing out from the sealing fluid outlet 46 in the chamber 8. In order to reduce the noise, it is desirable to provide another outflow portion near the outflow portion 46 for letting the sealing fluid out of the chamber 8.

Further, when the cleaning fluid in the chamber 8 is a liquid and it is not desirable that the sealing fluid from the first and second sealing fluid injection holes 34, 35 mix with the cleaning liquid in the chamber 8. The sealing fluid is discharged from the outlet 46.
By balancing the pressure of the nearby cleaning liquid,
Outflow from the outflow portion 46 can be suppressed. Further, when it is not preferable that the sealing fluid flowing out from the outflow portion 46 becomes bubbles in the cleaning liquid in the chamber 8 and continuously rises, a sensor for detecting the level of the cleaning liquid in the chamber 8 is provided. It is possible to adjust the injection amount of the cleaning liquid and the outflow amount of the sealing fluid into the chamber 8 based on the detection output of this sensor. FIG. 8 shows an example in which the inner wall of the rotary shaft 11 and the cover 31 between the grooves 36 and 37 is tapered to spread upward so as to further promote the rise of the seal fluid in the gap 32a.

In the above embodiments, the cover 31 and the sliding member 42 are made of PTFE. However, a high hardness plastic material can also be used when high precision machining rather than cleanliness is required.

[0033]

As is apparent from the above description, claim 1
According to the invention described in, the batch type gas phase processing unit processes a plurality of wafers at a time by gas, and the single wafer type liquid phase processing unit processes each wafer processed by the batch type gas phase processing unit one by one. Since the treatment is performed with the chemical liquid and ozone, the chemical liquid can be used in a relatively small amount, the throughput can be improved as a whole, and the entire surface of the wafer can be uniformly processed.

According to the invention described in claim 4,
The seal fluid introduced from the seal fluid injection hole into the gap between the through-hole of the cover and the rotary shaft prevents the reactive fluid in the chamber from flowing into the gap, and therefore the seal member is not used. It is possible to prevent corrosion of the rotating shaft due to the reactive fluid therein and to prevent the reactive fluid from leaking through the rotating shaft.

[Brief description of drawings]

FIG. 1 is a plan view schematically showing an embodiment of a wafer processing apparatus according to the present invention.

FIG. 2 is a cross-sectional view showing a single-wafer type liquid phase treatment unit of an embodiment.

FIG. 3 is an explanatory view showing a flow of a chemical liquid for cleaning the wafer surface.

FIG. 4 is a plan view and a cross-sectional view showing a modified example of the wafer chuck of the embodiment.

FIG. 5 is a flowchart showing another sequence of the embodiment.

FIG. 6 is a cross-sectional view showing a structure near a rotation shaft that rotates a wafer chuck of an embodiment.

7 is a cross-sectional view showing the structure of the cover of FIG.

8 is a sectional view showing a modified example of the structure of the cover of FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wafer processing apparatus 2 Batch type vapor phase processing unit 3 Wafer transfer unit 4 Single wafer type liquid phase processing unit 8 Chamber lower housing 9 Chamber upper housing 10 Wafer chuck (holding member) 11 Rotating shaft 12 Ultraviolet lamp (ozone generator) ) 17, 18 Nozzle (chemical solution discharge part) 28 Vacuum chuck (wafer chuck) 32 Through hole 32a Gap 33, 42 Sealed pressurizing chamber 34, 35 Seal fluid injection hole W Wafer Y Chemical solution

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display area B08B 3/08 B 2119-3B

Claims (6)

[Claims] 1. A batch type vapor phase processing unit which is hermetically sealed to the outside and accommodates a plurality of wafers and processes them simultaneously with a gas, a holding member for holding one wafer, and a wafer held by the holding member. A single-wafer type liquid phase processing unit that is sealed to the outside and that has a chemical liquid discharging unit that discharges and processes the chemical liquid to the wafer and an ozone generating unit that causes ozone to react with the wafer held by the holding member; And a wafer transfer unit for transferring the wafer processed by the batch type vapor phase processing unit to the single wafer type liquid phase processing unit. 2. The ozone generating section has an ultraviolet lamp for irradiating the wafer held by the holding member with ultraviolet light in an oxygen atmosphere, and the holding member holds the outer peripheral edge of the wafer,
2. The wafer processing apparatus according to claim 1, wherein the chemical liquid ejecting section has an upper nozzle and a lower nozzle for respectively ejecting the chemical liquid on the front surface and the back surface of the wafer held by the holding member. 3. The wafer processing apparatus according to claim 1, wherein the chemical liquid discharger intermittently discharges the chemical liquid onto one wafer. 4. A chamber, a rotary shaft which penetrates an outer wall of the chamber and is rotatably supported so as to be slidable in an axial direction, and a wafer chuck which is mounted on the rotary shaft and holds a wafer. A wafer processing apparatus for processing the wafer with a reactive fluid in the chamber, having a through hole having an inner diameter slightly larger than an outer diameter of the rotating shaft, and the rotating shaft passing through the through hole. A cover, a seal fluid injection hole that is bored in the cover and injects a seal fluid into a gap between the through hole and the rotation shaft, and a seal fluid injection hole that is formed below the seal fluid injection hole and communicates with the gap. And a sealing pressurizing chamber for applying a predetermined pressure to the gap, and the sealing fluid injected into the gap prevents the reactive fluid in the chamber from flowing into the gap. Wafer processing apparatus according to claim. 5. A sliding member which has a seal member that abuts the outer periphery of the rotary shaft and slides in the axial direction integrally with the rotary shaft, wherein the cover is connected to the through hole. The large diameter hole has a large diameter which is sufficiently larger than the inner diameter of the through hole, the large diameter hole is closed by the sliding member, and the closed pressurizing chamber is closed by the sliding member. The wafer processing apparatus according to claim 4, wherein the wafer processing apparatus is configured by: 6. The wafer processing apparatus according to claim 1, wherein a portion of the rotary shaft facing the through hole is made of resin, and a portion of the rotary shaft facing the seal member is made of metal.