JPH07168040A - Semiconductor laser focusing device - Google Patents
Semiconductor laser focusing deviceInfo
- Publication number
- JPH07168040A JPH07168040A JP34351893A JP34351893A JPH07168040A JP H07168040 A JPH07168040 A JP H07168040A JP 34351893 A JP34351893 A JP 34351893A JP 34351893 A JP34351893 A JP 34351893A JP H07168040 A JPH07168040 A JP H07168040A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- semiconductor laser
- optical
- emitting sources
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Landscapes
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
- Lasers (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、レーザーの集光装置に
関する。本発明はより特定的には複数の発光源を有する
半導体レーザーにおいてその光密度を有効に高める手段
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser focusing device. The present invention more particularly relates to a means for effectively increasing the light density of a semiconductor laser having a plurality of light emitting sources.
【0002】[0002]
【従来の技術】半導体レーザーは最も小型のレーザーで
ありしかも発振効率が50%を越す高効率であり産業上の
利用価値が高い。近年CDや光ディスクあるいは光通信な
ど主に情報処理産業の分野において重要な役割を果たし
てきているところである。しかしながら、より古くから
のレーザーの応用分野である加工の分野においては半導
体レーザーは全く用いられていない。これは半導体レー
ザーは確かに高効率ではあるが一つの発光源の大きさは
大きな物でもせいぜい1mm 以下であり極めて小さいため
にそこから放出される光出力は制限され、一個の発光源
を有する半導体レーザー単体では高々数W の光出力しか
出せないことによる。しかし上述のごとく半導体レーザ
ーは発振効率が非常に高いので高出力の光源として潜在
的な可能性を有していることは確かである。最近半導体
レーザーの室温高出力動作の技術が進歩したことに伴い
半導体レーザーが固体レーザーの励起光源として注目さ
れ、半導体レーザーからますます高出力の光出力を得る
技術が発展してきている。この目的のために多くの半導
体レーザーメーカーは複数の半導体レーザーを一次元あ
るいは二次元的に配列した構造をとり発光源の数を増や
すことにより一つのデバイスから多くの光出力を得る方
法をとっている。しかしながら、このようなデバイスか
ら放射されるレーザー光は各々の発光源が全く独立に発
振しているためにコヒーレンスが悪い。すなわち一つの
大きな光出力を持ったレーザー光線と見なすことはでき
ない。したがって、レーザー光線の重要な利点である一
点への集光性、これに伴う高いエネルギー密度の達成に
よる物体の加工の可能性という特徴が失われている。こ
のため、このような高出力半導体レーザーを加工に応用
したり固体レーザー励起の効率を高めるためにできるだ
け光密度を向上させる必要に迫られている当業者にとっ
ては、各々がばらばらに発光していて線状光源あるいは
面状光源に過ぎない複数の発光源からの複数の出射光を
できるだけ小さなスポットに集光する技術を開発するこ
とが必要となっている。ベイアー等は複数の半導体レー
ザーが一次元的に配列されたレーザーダイオードアレー
からの出射光をアレーと平行に配置されたファイバーレ
ンズにより一括してアレーと垂直な方向について集光
し、各々の集光点においてそれぞれ対応する光ファイバ
ーに光結合し、これらの全ての光ファイバーを他端にお
いて束ねて疑似的に一つの光源とする方式を考案した
(特開平5-93828 号公報参照)。しかしながら、この方
法ではレーザーダイオードアレーを構成する発光源の数
が多くなればなるほど光ファイバーの束が大きくなり一
点への集光という点で甚だ困難を生じることになる。2. Description of the Related Art A semiconductor laser is the smallest laser and has a high oscillation efficiency of over 50%, and has a high industrial utility value. In recent years, it has been playing an important role mainly in the field of information processing industry such as CD, optical disk or optical communication. However, semiconductor lasers have not been used at all in the field of processing, which is an application field of lasers for a long time. It is true that a semiconductor laser is highly efficient, but the size of one light source is 1 mm or less at most even for large ones, and the light output emitted from it is limited, so a semiconductor with one light source This is due to the fact that the laser alone can output only a few watts at most. However, since the semiconductor laser has a very high oscillation efficiency as described above, it is certain that it has potential as a high-output light source. With the recent progress in the room temperature high power operation technology of semiconductor lasers, semiconductor lasers have attracted attention as excitation sources for solid-state lasers, and technology for obtaining even higher optical output from semiconductor lasers has been developed. For this purpose, many semiconductor laser manufacturers take a method of obtaining a large amount of light output from one device by increasing the number of light emitting sources by adopting a structure in which a plurality of semiconductor lasers are arranged one-dimensionally or two-dimensionally. There is. However, the laser light emitted from such a device has poor coherence because each light emitting source oscillates completely independently. That is, it cannot be regarded as a laser beam having one large light output. Therefore, the important advantage of the laser beam, namely the ability to focus on a single point and the consequent possibility of processing an object by achieving a high energy density, is lost. For this reason, those skilled in the art who are required to improve the light density as much as possible in order to apply such a high-power semiconductor laser to processing or increase the efficiency of solid-state laser excitation, emit each light individually. It is necessary to develop a technique for condensing a plurality of emitted lights from a plurality of light emitting sources which are nothing but linear light sources or planar light sources into a spot as small as possible. Bayer, etc. collectively collects the emitted light from a laser diode array in which multiple semiconductor lasers are arranged one-dimensionally by a fiber lens arranged in parallel with the array in the direction perpendicular to the array, and collects each light. A method was devised in which all the optical fibers are optically coupled to each other at each point, and all these optical fibers are bundled at the other end to form a pseudo single light source (see Japanese Patent Laid-Open No. 5-93828). However, according to this method, the larger the number of light emitting sources constituting the laser diode array, the larger the bundle of optical fibers, which causes a great difficulty in converging light at one point.
【0003】[0003]
【発明が解決しようとする課題】本発明は、かかる状況
に鑑みてなされたもので、各々が独立に発光していて線
状光源あるいは面状光源に過ぎない複数の発光源を有す
る半導体レーザーの複数の出射光の光密度を有効に高め
る装置を提供するものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and is directed to a semiconductor laser having a plurality of light emitting sources each of which emits light independently and is merely a linear light source or a planar light source. An apparatus for effectively increasing the light density of a plurality of outgoing lights.
【0004】[0004]
【課題を解決するための手段】上記課題を解決するた
め、本発明においては、複数の発光源を有する半導体レ
ーザーまたは一つの発光源を有する複数の半導体レーザ
ーと、一方の端面に該発光源と同数の入力ポートを有
し、他方の端面に設けられた唯一つの出力ポートに向か
って全てが合流するように作られた光導波路とが、前記
発光源の各々からの出射光が前記光導波路の入力ポート
の各々に光学的に結合されるように組み合せられている
ことを特徴とする半導体レーザー装置を提供するもので
ある。また前記半導体レーザーと光導波路との光結合が
光ファイバーを介していてもよい。In order to solve the above problems, in the present invention, a semiconductor laser having a plurality of light emitting sources or a plurality of semiconductor lasers having a single light emitting source, and the light emitting source on one end face are provided. An optical waveguide having the same number of input ports and made so that all of them join together toward one output port provided on the other end face, and the light emitted from each of the light emission sources is of the optical waveguide. The present invention provides a semiconductor laser device characterized by being combined so as to be optically coupled to each of the input ports. Further, the optical coupling between the semiconductor laser and the optical waveguide may be through an optical fiber.
【0005】[0005]
【作用】ここで本発明の基本概念を説明する。発明者等
は複数の発光源を有する半導体レーザーからの出射光を
いかにしてできるだけ小さなスポットに集光するかにつ
いて考察と実験をした結果、いわば光導波路において形
成される光分岐器状の導波路構造を逆方向に用いること
によってこの目的が有効に達成し得ることを見出した。
ここで、光分岐器とは典型的には図4に示すような導波
構造をしている。図4において斜線部分で示す導波路は
周囲部分の基板より屈折率が大きく作られておりこの中
を通る光は全反射によって導波路内に閉じ込められて伝
播する。光分岐器は通常一つの信号源から複数の光ファ
イバーに光信号を分配するために用いられる。つまり光
分岐器においては入力ポートは一つで途中から複数の導
波路に分岐し複数の出力ポートに分かれる。図4に示す
光分岐器の一例は一つの入力ポートから四つの出力ポー
トに分岐するものである。このような形状で作られた光
分岐器を逆方向に用いると多くの支流が集まって本流を
作り出すような格好で複数の導波路が一本に収束するよ
うになる。すなわち、それぞれの出力ポートから複数の
発光源を有する半導体レーザーの各々の発光源からの出
射光を入力してやれば入力ポートにおいて光密度を有効
に高めることができる。光分岐器を形成する導波路は当
然のことながらこれを通す半導体レーザーの波長におい
て光吸収のない素材で作らなければならない。そうしな
いと複数の導波路からの光が合流する入力ポートにおい
て発熱による破壊を起こすであろう。さて次にどのよう
にして光分岐器に個々の発光源からの出射光を入力する
かという問題に移る。これには大別して二通りのやり方
がある。ひとつはバットカップリングまたはレンズによ
り光結合する方法である。このためには個々の発光源と
対応する光分岐器の各々の出力ポートとの位置関係が機
械的に極めて良い精度で決められていなければならな
い。これは通常の機械加工では相当に困難であるが、光
導波路の製造技術はリソグラフィーを基盤にしているの
で非常に良い再現性で精度の良い決った間隔の導波路を
作成することが可能であるから同じくリソグラフィーに
よって形成される一次元アレイ型半導体レーザーとの位
置合わせは比較的容易に達成できる。複数の素子が二次
元的に積層された半導体レーザーの場合には光結合器の
方も同様に積層することにより対処できる。もう一つは
複数の半導体レーザーからの出射光を各々一旦光ファイ
バーに導光して一本ずつ光結合器の出力ポートの内の一
つに光結合させるやり方である。一つ一つの発光素子を
光ファイバーに光結合させるのは相当に面倒な作業では
あるが、例えば一次元アレイ型半導体レーザーの場合シ
リコンの異方性エッチングで作ったV 溝等を利用して位
置合わせをすれば比較的能率がよい。この方法は単体で
機能する半導体レーザーが複数ある場合にも有用であ
る。The basic concept of the present invention will now be described. The inventors have studied and studied how to condense light emitted from a semiconductor laser having a plurality of light emission sources into a spot as small as possible, and as a result, a waveguide like an optical branch formed in an optical waveguide. It has been found that this object can be effectively achieved by using the structure in the reverse direction.
Here, the optical branching device typically has a waveguide structure as shown in FIG. The waveguide shown by the shaded area in FIG. 4 has a refractive index larger than that of the substrate in the peripheral portion, and the light passing through the waveguide is confined in the waveguide by total reflection and propagates. Optical splitters are commonly used to distribute an optical signal from one signal source to multiple optical fibers. That is, in the optical branching device, one input port branches into a plurality of waveguides from the middle and is divided into a plurality of output ports. An example of the optical branching device shown in FIG. 4 is to branch from one input port to four output ports. When the optical branching device made in such a shape is used in the reverse direction, a large number of tributaries are gathered and a plurality of waveguides are converged into one in a fashion that creates a main stream. That is, if the emitted light from each light emitting source of the semiconductor laser having a plurality of light emitting sources is input from each output port, the light density can be effectively increased at the input port. As a matter of course, the waveguide forming the optical branching device must be made of a material that does not absorb light at the wavelength of the semiconductor laser that passes through it. Otherwise, the heat from the waveguides will cause destruction at the input port where they merge. Now, let's move on to the problem of how to input the emitted light from each light emitting source to the optical branching device. There are two ways to do this. One is a method of optically coupling by a butt coupling or a lens. For this purpose, the positional relationship between each light emitting source and each output port of the corresponding optical branching device must be mechanically determined with extremely good accuracy. This is quite difficult with normal machining, but since the optical waveguide manufacturing technology is based on lithography, it is possible to create waveguides with very good reproducibility and high precision. Therefore, alignment with a one-dimensional array type semiconductor laser which is also formed by lithography can be achieved relatively easily. In the case of a semiconductor laser in which a plurality of elements are two-dimensionally stacked, the optical coupler can be similarly stacked. The other is a method in which light emitted from a plurality of semiconductor lasers is once guided to an optical fiber and is optically coupled to one of the output ports of the optical coupler. Optically coupling each light-emitting element to an optical fiber is quite a laborious task, but for example, in the case of a one-dimensional array type semiconductor laser, alignment is performed using V-grooves etc. made by anisotropic etching of silicon. If you do, it is relatively efficient. This method is also useful when there are multiple semiconductor lasers that function alone.
【0006】このようにすれば、各々がばらばらに発光
していて線状光源あるいは面状光源に過ぎない複数の発
光源を有する半導体レーザーの複数の出射光の光密度を
有効に高めることができる。By doing so, it is possible to effectively increase the light density of a plurality of emitted lights of a semiconductor laser having a plurality of light emitting sources each of which emits light separately and is only a linear light source or a planar light source. .
【0007】[0007]
【実施例】以下、本発明の好適実施例を添付の図面に基
づいて詳しく説明する。図1は、本発明が適用された第
1の実施例における複数の発光源を有する半導体レーザ
ーを一本に集光するための装置の構成を示す模式的斜視
図である。本実施例での半導体レーザー1aは複数の発
光源が一次元的に等間隔で配置されているものである。
これらの発光源の間隔は500 μm である。素材はGaAlAs
であり860nm 近傍で発振する。また本実施例における光
分岐器2aはこの波長において吸収のないLiNbO3基板上
にTi拡散により周囲より屈折率を高く形成した光導波路
からなる。半導体レーザー1aと光分岐器2aとの光結
合は両者を突き合わせたバットカップリングによってい
る。半導体レーザーのそれぞれの発光源から出射した光
は突き合わせられた導波路に直接光結合する。その後隣
り合う導波路と緩やかな角度で一つずつ合流して最終的
に一本になる。このようにして各々がばらばらに発光し
ていて線状光源に過ぎない複数の発光源を有する半導体
レーザーの複数の出射光の光密度が有効に高められる。
同業者はこの出射光をレンズで集光したり光ファイバー
に導光すれば一本の高出力の半導体レーザービームとし
て加工などに有用な光源となることに気づくであろう。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will now be described in detail with reference to the accompanying drawings. FIG. 1 is a schematic perspective view showing the configuration of an apparatus for converging a single semiconductor laser having a plurality of light emission sources in the first embodiment to which the present invention is applied. The semiconductor laser 1a in this embodiment has a plurality of light emitting sources arranged one-dimensionally at equal intervals.
The distance between these light emitting sources is 500 μm. Material is GaAlAs
And oscillates near 860 nm. The optical branching device 2a in this embodiment is composed of an optical waveguide having a refractive index higher than that of the surroundings by Ti diffusion on a LiNbO3 substrate which does not absorb at this wavelength. The optical coupling between the semiconductor laser 1a and the optical branching device 2a is based on a butt coupling in which they are butted. The light emitted from each light emitting source of the semiconductor laser is directly optically coupled to the abutted waveguide. After that, they merge with the adjacent waveguides one by one at a gentle angle to finally become one. In this way, the light densities of a plurality of emitted lights of the semiconductor laser having a plurality of light emitting sources, which emit light separately and are merely linear light sources, are effectively increased.
Those skilled in the art will recognize that if the emitted light is condensed by a lens or guided to an optical fiber, it becomes a light source useful as a single high-power semiconductor laser beam for processing.
【0008】図2は本発明が適用された第2の実施例を
示す模式図である。本実施例での半導体レーザー1bは
複数の発光源が一次元的に等間隔で配置されているもの
をさらに二次元的に積層したものである。縦方向の発光
源間隔は1mm である。光分岐器2b1 ,2b2 は横方向
と縦方向の二段階に分けて用意した。半導体レーザー1
bおよび光分岐器2b1 ,2b2 の素材は第1の実施例
と同じである。半導体レーザー1bと光分岐器2b1 ,
2b2 との光結合はバットカップリングによっている。
まず横方向を収束させる。横方向を収束させる光分岐器
は一つの横の列についてみると第1の実施例と同様であ
り、これらを半導体レーザー1bの積層の数だけ縦に積
層してある。各光分岐器の出口では各横方向の光が収束
され、全体では横方向に収束された光が縦方向に一列に
列ぶことになる。次に縦に一列にならんだ収束光に合わ
せて縦方向収束用の光分岐器を配置し縦方向の収束を行
う。このようにして各々がばらばらに発光していて面状
光源に過ぎない複数の発光源を有する半導体レーザーの
複数の出射光の光密度が有効に高められる。なお、入口
の導波路の間隔ピッチを少し変更することで縦方向と横
方向の収束の順番を逆にすることも可能である。FIG. 2 is a schematic view showing a second embodiment to which the present invention is applied. The semiconductor laser 1b in the present embodiment is one in which a plurality of light emitting sources are one-dimensionally arranged at equal intervals and are further two-dimensionally laminated. The vertical light source spacing is 1 mm. The optical branching devices 2b 1 and 2b 2 were prepared in two stages, a horizontal direction and a vertical direction. Semiconductor laser 1
The materials of b and the optical branching devices 2b 1 and 2b 2 are the same as those in the first embodiment. Semiconductor laser 1b and optical splitter 2b 1 ,
Optical coupling with 2b 2 is based on butt coupling.
First, the horizontal direction is converged. The optical branching device for converging in the horizontal direction is the same as that of the first embodiment when looking at one horizontal row, and these are vertically stacked by the number of stacked semiconductor lasers 1b. At the exit of each optical branching device, the light beams in the respective lateral directions are converged, and the light beams converged in the lateral direction are lined up in a line in the longitudinal direction as a whole. Next, an optical branching device for vertical focusing is arranged in accordance with the convergent light aligned in a vertical line to perform vertical focusing. In this way, the light densities of a plurality of emitted lights of a semiconductor laser having a plurality of light emitting sources, which emit light separately and are merely planar light sources, are effectively increased. It is also possible to reverse the order of convergence in the vertical direction and the horizontal direction by slightly changing the interval pitch of the waveguides at the entrance.
【0009】図3は本発明が適用された第3の実施例を
示す模式図である。本実施例での半導体レーザー1cは
一個の発光源を有するものであり、これが複数個ある。
半導体レーザー1cの素材は第1の実施例と同じであ
る。光分岐器2cはシリコン基板上にシリカガラスの導
波路を形成したものである。それぞれの半導体レーザー
1cからの出射光は光ファイバー3の一方の端にバット
カップリングされる。各光ファイバー3の他端は、分布
屈折率型のマイクロレンズを光分岐器2cの入口の間隔
ピッチとおなじ間隔ピッチで配列したレンズ群4によっ
て光分岐器2cの入口の内の一つに光結合されている。
あとは第1の実施例と同様にして各導波路に導かれた全
ての光が一本に収束される。FIG. 3 is a schematic diagram showing a third embodiment to which the present invention is applied. The semiconductor laser 1c in this embodiment has one light emitting source, and there are a plurality of light emitting sources.
The material of the semiconductor laser 1c is the same as that of the first embodiment. The optical branching device 2c is formed by forming a silica glass waveguide on a silicon substrate. Light emitted from each semiconductor laser 1c is butt-coupled to one end of the optical fiber 3. The other end of each optical fiber 3 is optically coupled to one of the entrances of the optical branching device 2c by a lens group 4 in which distributed index type microlenses are arranged at the same interval pitch as the entrance pitch of the optical branching device 2c. Has been done.
After that, as in the first embodiment, all the lights guided to the respective waveguides are converged into one.
【0010】[0010]
【発明の効果】以上の説明により明らかなように、本発
明による複数の発光源からの光を一点に集光するための
装置によれば、複数の発光源を有する半導体レーザーま
たは一個の発光源を有する複数の半導体レーザーからの
出射光の光密度を有効に高めることができる。As is apparent from the above description, according to the device for condensing light from a plurality of light emitting sources at one point according to the present invention, a semiconductor laser having a plurality of light emitting sources or one light emitting source is provided. It is possible to effectively increase the light density of the emitted light from the plurality of semiconductor lasers having
【図1】本発明が適用された第1の実施例における複数
の発光源を有する半導体レーザーを一点に集光するため
の装置の構成を示す模式的斜視図である。FIG. 1 is a schematic perspective view showing a configuration of an apparatus for focusing a semiconductor laser having a plurality of light emitting sources on one point in a first embodiment to which the present invention is applied.
【図2】本発明が適用された第2の実施例の構成を示す
斜視的模式図である。FIG. 2 is a perspective schematic view showing a configuration of a second embodiment to which the present invention is applied.
【図3】本発明が適用された第3の実施例の構成を示す
斜視的模式図である。FIG. 3 is a perspective schematic view showing a configuration of a third embodiment to which the present invention is applied.
【図4】光分岐器の説明図である。FIG. 4 is an explanatory diagram of an optical branching device.
1a,1b,1c 半導体レーザー 2a,2b1 ,2b2 ,2c 光分岐器 3 光ファイバー 4 マイクロレンズ群1a, 1b, 1c Semiconductor lasers 2a, 2b 1 , 2b 2 , 2c Optical splitter 3 Optical fiber 4 Micro lens group
フロントページの続き (72)発明者 植田 健司 神奈川県相模原市淵野辺5丁目10番1号 新日本製鐵株式会社エレクトロニクス研究 所内Front Page Continuation (72) Inventor Kenji Ueda 5-10-1, Fuchinobe, Sagamihara-shi, Kanagawa Nippon Steel Corporation Electronics Research Laboratory
Claims (2)
たは一つの発光源を有する複数の半導体レーザーと、 一方の端面に該発光源と同数の入力ポートを有し、他方
の端面に設けられた唯一つの出力ポートに向かって全て
が合流するように作られた光導波路とが、 前記発光源の各々からの出射光が前記光導波路の入力ポ
ートの各々に光学的に結合されるように組み合せられて
いることを特徴とする半導体レーザー集光装置。1. A semiconductor laser having a plurality of light emitting sources or a plurality of semiconductor lasers having a single light emitting source, and one end face having the same number of input ports as the light emitting sources and the only one provided on the other end face. Optical waveguides that are all made to merge towards one output port, such that the light emitted from each of the light emitting sources is optically coupled to each of the input ports of the optical waveguides. A semiconductor laser condensing device characterized in that
ァイバーを介していることを特徴とする請求項1に記載
の半導体レーザー集光装置。2. The semiconductor laser condensing device according to claim 1, wherein the optical coupling between the light emitting source and the optical waveguide is through an optical fiber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34351893A JPH07168040A (en) | 1993-12-14 | 1993-12-14 | Semiconductor laser focusing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34351893A JPH07168040A (en) | 1993-12-14 | 1993-12-14 | Semiconductor laser focusing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07168040A true JPH07168040A (en) | 1995-07-04 |
Family
ID=18362138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34351893A Withdrawn JPH07168040A (en) | 1993-12-14 | 1993-12-14 | Semiconductor laser focusing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07168040A (en) |
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| JP2001330763A (en) * | 2000-03-15 | 2001-11-30 | Hoya Corp | Condenser parts as well as light source module, laser device and signal amplifier device using the same |
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1993
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|---|---|---|---|---|
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| US20140133798A1 (en) * | 2012-11-15 | 2014-05-15 | Hon Hai Precision Industry Co., Ltd. | Light source using laser diodes |
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