JPH0713328A - Substrate cleaning device and method - Google Patents
Substrate cleaning device and methodInfo
- Publication number
- JPH0713328A JPH0713328A JP17739293A JP17739293A JPH0713328A JP H0713328 A JPH0713328 A JP H0713328A JP 17739293 A JP17739293 A JP 17739293A JP 17739293 A JP17739293 A JP 17739293A JP H0713328 A JPH0713328 A JP H0713328A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- pattern
- wear
- abrasion
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 81
- 238000004140 cleaning Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title abstract description 22
- 238000005299 abrasion Methods 0.000 claims abstract description 20
- 230000001590 oxidative effect Effects 0.000 claims abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 230000001965 increasing effect Effects 0.000 claims description 7
- 230000000452 restraining effect Effects 0.000 abstract 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
- 239000011521 glass Substances 0.000 description 11
- 238000001035 drying Methods 0.000 description 10
- 238000005201 scrubbing Methods 0.000 description 10
- 238000011282 treatment Methods 0.000 description 10
- 239000000356 contaminant Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 239000004677 Nylon Substances 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920001778 nylon Polymers 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- -1 molybdenum Chemical compound 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は基板を洗浄するための装
置および方法に関し、特に半導体製造工程で使用される
レチクルやフォトマスク等のガラス基板に付着した異物
(微小なゴミやシミあるいは油分)を除去する洗浄装置
および方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and method for cleaning a substrate, and in particular, foreign matter (fine dust, stains or oil) attached to a glass substrate such as a reticle or photomask used in a semiconductor manufacturing process. The present invention relates to a cleaning device and a method for removing dust.
【0002】[0002]
【従来の技術】レチクルやフォトマスク等のガラス基板
に付着した塵埃等の異物を放置すると、これらの異物が
ウェハ上に転写され、製造されるウェハの欠陥の原因と
なる。基板に付着する汚染物が多種に亘ることから、付
着する汚染物の種類に応じた種々の洗浄法が従来より提
案されている。2. Description of the Related Art If foreign substances such as dust adhered to a glass substrate such as a reticle or a photomask are left as they are, these foreign substances are transferred onto the wafer and cause defects in the manufactured wafer. Since various kinds of contaminants adhere to the substrate, various cleaning methods have been proposed according to the kind of adhered contaminants.
【0003】たとえば、油脂などの有機物系汚染物の除
去法として、紫外線照射法が知られている。一方、金属
酸化物、塵埃等の無機物系汚染物の除去法として、一対
の回転ブラシを使用するブラシスクラブ法および清浄な
氷粒子を基板表面に加圧噴射するアイススクラブ法があ
る。ブラシスクラブ法およびアイススクラブ法は、原則
として物理的作用によって基板表面の汚染物を直接除去
する方法である。For example, an ultraviolet irradiation method is known as a method for removing organic contaminants such as fats and oils. On the other hand, as a method for removing inorganic contaminants such as metal oxides and dust, there are a brush scrubbing method using a pair of rotating brushes and an ice scrubbing method in which clean ice particles are pressure-injected onto the substrate surface. In principle, the brush scrubbing method and the ice scrubbing method are methods for directly removing contaminants on the substrate surface by physical action.
【0004】このように、紫外線照射法は有機物系汚染
物に対して有効であり、ブラシスクラブ法およびアイス
スクラブ法は無機物系汚染物に対して有効である。一般
に、基板表面には有機物および無機物の双方が汚染物と
して付着するため、基板を洗浄するには種々の洗浄処理
を適用する必要がある。ところで、レチクルやフォトマ
スク等のガラス基板には、たとえばクロムによってパタ
ーン(印刷物)が形成されている。基板を洗浄する場
合、特に基板の表面に物理力を作用させて基板を洗浄す
る場合には、基板に形成されたパターンが磨耗し易い。
近年、パターンの微細化に伴いパターンを形成する線の
幅がさらに細くなっているので、基板に形成されたパタ
ーンが磨耗し易い傾向は顕著である。As described above, the ultraviolet irradiation method is effective for organic contaminants, and the brush scrub method and ice scrub method are effective for inorganic contaminants. Generally, both organic substances and inorganic substances adhere to the surface of the substrate as contaminants, and therefore various cleaning treatments must be applied to clean the substrate. By the way, a pattern (printed matter) is formed of, for example, chrome on a glass substrate such as a reticle or a photomask. When cleaning a substrate, particularly when cleaning the substrate by applying a physical force to the surface of the substrate, the pattern formed on the substrate is easily worn.
In recent years, with the miniaturization of patterns, the width of the lines forming the patterns has become narrower, so that the pattern formed on the substrate tends to be easily worn.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、従来の
基板の洗浄装置ではパターンの磨耗を抑制または防止す
る手段が全く講じられていないので、特に基板の表面に
物理力を作用させて洗浄する場合、ガラス基板上のパタ
ーンが磨耗し易い。したがって、投影露光すべきパター
ンが度重なる洗浄に起因して過度に磨耗し、その結果半
導体製造工程における不良品が発生し易いという不都合
があった。また、ガラス基板の寿命が短かくなってしま
うという不都合があった。However, in the conventional substrate cleaning apparatus, since no means for suppressing or preventing the abrasion of the pattern is provided, especially when cleaning is performed by applying a physical force to the surface of the substrate, The pattern on the glass substrate is easily worn. Therefore, there has been a disadvantage that the pattern to be projected and exposed is excessively worn due to repeated cleaning, and as a result, defective products are likely to occur in the semiconductor manufacturing process. Further, there is a disadvantage that the life of the glass substrate is shortened.
【0006】したがって、パターンの過度の磨耗を予め
回避するために洗浄の回数を抑制しなければならなかっ
た。本発明は、前述の課題に鑑みてなされたものであ
り、洗浄に先立って基板の表面に形成されたパターンの
耐磨耗性を高めた後に基板表面に物理力を作用させて基
板を洗浄することのできる洗浄装置および方法を提供す
ることを目的とする。Therefore, in order to avoid excessive wear of the pattern in advance, the number of times of cleaning has to be suppressed. The present invention has been made in view of the above-mentioned problems, and prior to cleaning, the substrate is cleaned by increasing the abrasion resistance of the pattern formed on the surface of the substrate and then applying a physical force to the substrate surface to clean the substrate. It is an object of the present invention to provide a cleaning device and method capable of performing the cleaning.
【0007】[0007]
【課題を解決するための手段】前記課題を解決するため
に、本発明においては、基板に形成されたパターンを酸
化させて該表面の磨耗を抑制するための磨耗抑制手段
と、基板表面に物理力を作用させて該表面の異物を除去
するための異物除去手段とを備えていることを特徴とす
る基板の洗浄装置を提供する。本発明の好ましい態様に
よれば、前記パターンはクロムからなり、前記磨耗抑制
手段は過酸化水素水を収容した処理槽を有し、該処理槽
の過酸化水素水に基板を浸すことにより前記パターンを
酸化させて前記パターンの表面の耐磨耗性を高める。In order to solve the above-mentioned problems, in the present invention, wear suppressing means for oxidizing a pattern formed on a substrate to suppress wear of the surface, and a physical surface of the substrate. There is provided a substrate cleaning apparatus comprising: foreign matter removing means for applying a force to remove foreign matter on the surface. According to a preferred aspect of the present invention, the pattern is made of chromium, the wear suppressing means has a treatment tank containing hydrogen peroxide solution, and the pattern is formed by immersing the substrate in the hydrogen peroxide solution of the treatment tank. Are oxidized to increase the abrasion resistance of the surface of the pattern.
【0008】また、本発明によれば、洗浄すべき基板に
形成されたパターンの耐磨耗性を高めるための磨耗抑制
工程と、前記磨耗抑制工程を経て磨耗が抑制された前記
パターンを有する基板表面に物理力を作用させて該表面
の異物を除去するための異物除去工程とを備えているこ
とを特徴とする基板の洗浄方法を提供する。Further, according to the present invention, a substrate having a pattern formed on the substrate to be cleaned has a wear suppressing step for enhancing the wear resistance, and a substrate having the pattern suppressed in abrasion through the wear suppressing step. And a foreign matter removing step for removing foreign matter on the surface by applying a physical force to the surface.
【0009】[0009]
【作用】本発明の基板の洗浄装置および方法では、基板
表面に物理力を作用させる洗浄に先立ち、基板に形成さ
れたパターンの耐磨耗性を高めることによってパターン
表面の磨耗を抑制するための処理を行う。レチクルやフ
ォトマスク等のガラス基板では、クロムによってパター
ンが形成されているのが一般的である。この場合、過酸
化水素やオゾンを基板表面に作用させ、クロムを酸化す
ることによって磨耗を抑制することができる。清浄空気
雰囲気中において基板表面に紫外線を照射してオゾンを
発生させ、発生したオゾンを基板表面に作用させてもよ
い。また、たとえばモリブデンのようなクロム以外の物
質でパターンが形成されている場合でも、酸化等の化学
作用により磨耗に対する抵抗性(耐磨耗性)を適宜高め
ることによって、パターン表面の磨耗を抑制することが
できる。In the substrate cleaning apparatus and method of the present invention, before the cleaning in which the physical force is applied to the substrate surface, the abrasion resistance of the pattern formed on the substrate is increased to suppress the abrasion of the pattern surface. Perform processing. In a glass substrate such as a reticle or a photomask, a pattern is generally formed of chromium. In this case, abrasion can be suppressed by causing hydrogen peroxide or ozone to act on the substrate surface to oxidize chromium. The substrate surface may be irradiated with ultraviolet rays in a clean air atmosphere to generate ozone, and the generated ozone may act on the substrate surface. Further, even when the pattern is formed of a substance other than chromium such as molybdenum, abrasion of the pattern surface is suppressed by appropriately increasing the resistance to abrasion (wear resistance) by a chemical action such as oxidation. be able to.
【0010】[0010]
【実施例】本発明の実施例を、添付図面に基づいて説明
する。図1は、本発明の実施例にかかる基板の洗浄装置
の構成を模式的に説明する図である。図示の装置は、基
板に形成されたパターンの磨耗を抑制するための磨耗抑
制処理槽1、基板表面に物理力を作用させて洗浄するた
めのブラシスクラブ槽2、および基板を乾燥させるため
のIPA(イソプロピルアルコール液)乾燥処理槽3か
らなる。また、図示の装置はさらに、基板の搬送機構を
備えている。Embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a diagram schematically illustrating the configuration of a substrate cleaning apparatus according to an embodiment of the present invention. The apparatus shown in the drawing is a wear suppression treatment tank 1 for suppressing the wear of a pattern formed on a substrate, a brush scrub tank 2 for applying a physical force to the surface of the substrate to clean it, and an IPA for drying the substrate. (Isopropyl alcohol liquid) The drying treatment tank 3 is provided. Further, the illustrated apparatus further includes a substrate transfer mechanism.
【0011】磨耗抑制処理槽1には、過酸化水素水11
を収容した容器12が設けられている。また、ブラシス
クラブ槽2には、洗浄液を射出する複数のノズル22
と、このノズル22の下方に位置決めされた一対のナイ
ロンブラシ21とが設けられている。さらに、IPA乾
燥処理槽3には、ヒーター31と、このヒーター31の
上方に位置決めされた容器34とが設けられている。容
器34内にはイソプロピルアルコール液32が収容され
ている。A hydrogen peroxide solution 11 is placed in the wear suppression treatment tank 1.
A container 12 accommodating the is provided. Further, the brush scrubbing tank 2 has a plurality of nozzles 22 for injecting the cleaning liquid.
And a pair of nylon brushes 21 positioned below the nozzle 22. Further, the IPA drying tank 3 is provided with a heater 31 and a container 34 positioned above the heater 31. The container 34 contains the isopropyl alcohol liquid 32.
【0012】一方、基板の搬送機構は、たとえばクロム
によってパターンが形成されたレチクルのようなガラス
基板6を支持して図中上下方向に移動可能な保持金具7
と、図中水平方向に配置されたガイド4と、保持金具7
をガイド4に沿って往復移動させる搬送手段5とからな
る。On the other hand, the substrate transfer mechanism supports a glass substrate 6 such as a reticle on which a pattern is formed by chromium, for example, and a holding metal fitting 7 that can move vertically in the drawing.
And the guides 4 arranged in the horizontal direction in the figure and the holding metal fittings 7.
And a transporting means 5 for reciprocating along the guide 4.
【0013】以下、図面を参照して本実施例の装置の動
作を説明する。たとえばレチクルカセットのような収容
手段(不図示)から取り出された洗浄すべき基板6は保
持金具7によって把持されたまま、まず磨耗抑制処理槽
1の上方に移動する。次いで、搬送手段5の作用により
基板6は下方に鉛直移動し、容器12内に収容された過
酸化水素水11に浸される。ここで、過酸化水素水11
はガラス基板6のパターンを形成するクロムと反応し、
クロムパターンの表面が酸化される。こうして、パター
ンの表面には耐磨耗性の高い酸化クロム膜が形成され、
パターン表面の物理力に対する磨耗が抑制される。The operation of the apparatus of this embodiment will be described below with reference to the drawings. For example, the substrate 6 to be cleaned, which has been taken out from a storage means (not shown) such as a reticle cassette, is first moved above the wear suppression processing tank 1 while being held by the holding metal fitting 7. Then, the substrate 6 moves vertically downward by the action of the transporting means 5 and is immersed in the hydrogen peroxide solution 11 contained in the container 12. Here, hydrogen peroxide water 11
Reacts with chromium forming the pattern of the glass substrate 6,
The surface of the chrome pattern is oxidized. In this way, a chromium oxide film with high wear resistance is formed on the surface of the pattern,
Wear of the pattern surface against physical force is suppressed.
【0014】上述のように磨耗抑制処理が施されたガラ
ス基板6は、次いでブラシスクラブ槽2内に移動する。
ブラシスクラブ槽2では、たとえば純水のような適当な
洗浄液がノズル22を介して一定圧力で基板表面に噴射
される。基板6は搬送手段5の作用によりさらに下方に
鉛直移動し、回転する一対のナイロンブラシ21の間に
挿入される。こうして、ナイロンブラシ21の接触摩擦
力を基板6の全面に亘り作用させて基板6を洗浄する。The glass substrate 6 that has been subjected to the abrasion suppressing process as described above is then moved into the brush scrubbing tank 2.
In the brush scrubbing tank 2, a suitable cleaning liquid such as pure water is sprayed onto the substrate surface through the nozzle 22 at a constant pressure. The substrate 6 is vertically moved further downward by the action of the conveying means 5, and is inserted between the pair of rotating nylon brushes 21. Thus, the contact frictional force of the nylon brush 21 acts on the entire surface of the substrate 6 to clean the substrate 6.
【0015】ブラシスクラブ槽2で洗浄された基板6は
洗浄液で湿潤状態となっており、最後にIPA乾燥処理
槽3において乾燥処理が行われる。IPA乾燥槽3で
は、ヒーター31の作用により容器34内のイソプロピ
ルアルコール液32が気化し、容器34の上方領域には
イソプロピルアルコール蒸気33が充満している。基板
6は、搬送機構の作用により乾燥処理槽3の上方に搬送
され、次いでガラス基板6が全体に亘りイソプロピルア
ルコール気体充満部33に浸される。ここで、基板6の
表面の水分がイソプロピルアルコール気体と結合して揮
発する。こうして、基板6の乾燥処理が終了する。The substrate 6 cleaned in the brush scrubbing tank 2 is in a wet state with the cleaning liquid, and finally the IPA drying processing tank 3 is dried. In the IPA drying tank 3, the isopropyl alcohol liquid 32 in the container 34 is vaporized by the action of the heater 31, and the upper region of the container 34 is filled with isopropyl alcohol vapor 33. The substrate 6 is transported to above the drying treatment tank 3 by the action of the transport mechanism, and then the glass substrate 6 is entirely immersed in the isopropyl alcohol gas filled portion 33. Here, the water on the surface of the substrate 6 is combined with the isopropyl alcohol gas and volatilized. Thus, the drying process of the substrate 6 is completed.
【0016】なお、本実施例では、ブラシスクラビング
処理とIPA乾燥処理とを行う洗浄装置について本発明
を説明したが、他の適当な物理的作用による洗浄処理お
よび他の適当な乾燥処理を行う洗浄装置についても本発
明が適用されることは明らかである。また、本実施例で
は、クロムによってパターンが形成されたガラス基板に
ついて説明したが、他の適当な物質によってパターンが
形成された他の基板についても、たとえば酸化等の適当
な方法によりパターンの耐磨耗性を高めることができる
ことは明らかである。In the present embodiment, the present invention has been described with respect to the cleaning apparatus for performing the brush scrubbing process and the IPA drying process, but the cleaning process by other suitable physical action and the cleaning process by other suitable drying process. It is obvious that the present invention can be applied to a device. Further, in the present embodiment, the glass substrate on which the pattern is formed by chromium has been described. Obviously, the wear resistance can be increased.
【0017】[0017]
【効果】以上説明したように、本発明の基板の洗浄装置
および方法では、基板表面に物理力を作用させる洗浄に
先立ち、基板に形成されたパターンの耐磨耗性を高める
ことによって基板表面の磨耗を抑制するための処理を行
うことができる。この結果、度重なる洗浄に起因して基
板のパターンが過度に磨耗することがなく、またパター
ンの過度の磨耗を回避するために洗浄の回数を抑制する
必要もなくなる。したがって、基板の寿命が結果的に著
しく伸び且つ半導体製造工程における不良品の発生が大
幅に回避される。As described above, according to the substrate cleaning apparatus and method of the present invention, prior to the cleaning in which the physical force is applied to the substrate surface, the abrasion resistance of the pattern formed on the substrate is increased to improve the substrate surface. A treatment for suppressing wear can be performed. As a result, the pattern of the substrate is not excessively worn due to repeated cleaning, and it is not necessary to suppress the number of cleanings in order to avoid excessive wear of the pattern. Therefore, the life of the substrate is significantly extended as a result, and the occurrence of defective products in the semiconductor manufacturing process is largely avoided.
【図1】本発明の実施例にかかる基板の精密洗浄装置の
構成を概略的に説明する図である。FIG. 1 is a diagram schematically illustrating a configuration of a substrate precision cleaning apparatus according to an embodiment of the present invention.
1 磨耗抑制処理槽 2 ブラシスクラブ槽 3 IPA乾燥処理槽 4 ガイド 5 搬送手段 6 基板 7 保持金具 11 過酸化水素水 21 ナイロンブラシ 22 ノズル 31 ヒーター 32 イソプロピルアルコール液 1 Abrasion suppression treatment tank 2 Brush scrubbing tank 3 IPA drying treatment tank 4 Guide 5 Transfer means 6 Substrate 7 Holding metal fitting 11 Hydrogen peroxide water 21 Nylon brush 22 Nozzle 31 Heater 32 Isopropyl alcohol liquid
Claims (3)
該表面の磨耗を抑制するための磨耗抑制手段と、基板表
面に物理力を作用させて該表面の異物を除去するための
異物除去手段とを備えていることを特徴とする基板の洗
浄装置。1. A wear suppressing unit for oxidizing a pattern formed on a substrate to suppress wear of the surface, and a foreign substance removing unit for applying a physical force to the surface of the substrate to remove foreign substances on the surface. An apparatus for cleaning a substrate, comprising:
耗抑制手段は過酸化水素水を収容した処理槽を有し、該
処理槽の過酸化水素水に基板を浸すことにより前記パタ
ーンを酸化させて前記パターンの表面の耐磨耗性を高め
ることを特徴とする請求項1に記載の装置。2. The pattern is made of chromium, and the wear suppressing means has a processing tank containing hydrogen peroxide solution, and the pattern is oxidized by immersing the substrate in the hydrogen peroxide solution of the processing tank. The device according to claim 1, wherein the surface of the pattern is increased in abrasion resistance.
耐磨耗性を高めるための磨耗抑制工程と、前記磨耗抑制
工程を経て磨耗が抑制された前記パターンを有する基板
表面に物理力を作用させて該表面の異物を除去するため
の異物除去工程とを備えていることを特徴とする基板の
洗浄方法。3. A wear suppressing step for increasing the wear resistance of a pattern formed on a substrate to be cleaned, and a physical force is applied to the surface of the substrate having the pattern whose wear is suppressed through the wear suppressing step. And a foreign matter removing step for removing foreign matter on the surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17739293A JPH0713328A (en) | 1993-06-24 | 1993-06-24 | Substrate cleaning device and method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17739293A JPH0713328A (en) | 1993-06-24 | 1993-06-24 | Substrate cleaning device and method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0713328A true JPH0713328A (en) | 1995-01-17 |
Family
ID=16030139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17739293A Pending JPH0713328A (en) | 1993-06-24 | 1993-06-24 | Substrate cleaning device and method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0713328A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2012086744A1 (en) * | 2010-12-24 | 2014-06-05 | Hoya株式会社 | Mask blank and manufacturing method thereof, and transfer mask and manufacturing method thereof |
-
1993
- 1993-06-24 JP JP17739293A patent/JPH0713328A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2012086744A1 (en) * | 2010-12-24 | 2014-06-05 | Hoya株式会社 | Mask blank and manufacturing method thereof, and transfer mask and manufacturing method thereof |
JP5865263B2 (en) * | 2010-12-24 | 2016-02-17 | Hoya株式会社 | Mask blank and manufacturing method thereof, and transfer mask and manufacturing method thereof |
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