JPH07126832A - Sputtering device - Google Patents

Abstract

(57) [Summary] [Object] To provide a sputtering technique capable of improving the yield, reducing the downtime of the apparatus, and reducing the running cost by reducing the foreign matter attached to the sputtering target. A height of a movable deposition preventive plate 6c around a pedestal 7 on which a wafer 9 is mounted is made lower than a position of the wafer 9 by a dimension d, and an outer edge portion 7c of a mounting region of the wafer 9 on the pedestal 7 is formed. The outer diameter of the wafer 9
The stepped portion 7d is engraved so as to be smaller than the outer diameter of. Rounding processing R1, R2, R4, and R5 is applied to the corners of the movable deposition-inhibitory plate 6c and the pedestal 7, so that the thin film attached to the pedestal 7 other than the target wafer 9 or the movable deposition-inhibition plate 6c is less likely to peel off. is doing.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to sputtering technology,
In particular, the present invention relates to a technique that is effective when applied to a thin film forming step in a semiconductor integrated circuit manufacturing process.

[0002]

BACKGROUND OF THE INVENTION In recent years, with high integration of semiconductor integrated circuits, for example, the wiring step is a laminated film made of a refractory metal / A _l C _u S _i / refractory metal having a three-layer structure by the sputtering apparatus , Is required in response to the demand for reliability of the circuit. For example, in the 0.5 μm process, T _i W / A _l C _u
A three-layer film of S _i / T _i W is used as a wiring material.

By the way, during the sputtering process, a thin film is formed on the inner wall surface of the processing chamber at the same time as the target wafer surface by sputtering, and the thin film adhered to the inner wall surface may be peeled off to become a foreign substance and adhere to the wafer. There is. As a countermeasure, conventionally, for example, in the sputtering chamber for T _i W, by blasting the A _l material on the surface of the deposition preventing plate to conceal the inner wall surface of the processing chamber from the sputtering space, T _i W film The mainstream measures were to prevent the peeling off of shavings.

Regarding the sputtering technique in the manufacturing process of semiconductor integrated circuits, for example, "Electronic Materials" 1 published by Kogyo Kogyo Kaisha, Ltd., November 18, 1986.
It is described in the literature such as November, 986, P134 to P139.

[0005]

However, in the above-mentioned prior art, although the foreign matter reduction by the surface treatment of the deposition preventive plate is taken into consideration, the shape of the deposition preventive plate is not taken into consideration.

[0006] Therefore, frequently the wafer adhering foreign matter by deposition film peeling from deposition preventing plate of the sputtering chamber for T _i W, the deposition preventing plate must be replaced in a short period, the frequency of replacement of the deposition preventing plate Due to the increase in equipment stoppages and the increase in the cost of reprocessing the adhesion-preventing plate, the running cost was high.

An object of the present invention is to provide a sputtering technique capable of improving the yield, shortening the down time of the apparatus, and reducing the running cost by reducing the foreign matters attached to the sputtering target. is there.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0009]

Of the inventions disclosed in the present application, a representative one will be briefly described below.
It is as follows.

That is, according to the first aspect of the invention, a pedestal disposed in the processing chamber for supporting the sputtering target, a target disposed above the pedestal so as to face the sputtering target, and the target and the sputtering target. In a sputtering device including a deposition-inhibiting plate that hides a wall surface of a processing chamber from a sputtering space facing the target object, a peripheral area of a pedestal in the deposition-inhibiting plate is lower than the sputtering target object.

According to a second aspect of the present invention, in the sputtering apparatus according to the first aspect, the pedestal supports the rear surface of the sputtering target by point contact, and the caliber of the pedestal is larger than that of the sputtering target. It is a small one.

The invention according to claim 3 is the sputtering apparatus according to claim 1 or 2, wherein the edge of the deposition preventive plate exposed to the sputtering space has a rounded structure.

Further, the invention according to claim 4 is based on claim 1,
In the sputtering apparatus according to 2 or 3, the deposition preventive plate is separated into a first deposition preventive plate located near the target and a second deposition preventive plate other than the target, and only the first deposition preventive plate is grounded. It is a thing.

Further, the invention according to claim 5 is based on claim 1,
In the sputtering apparatus according to 2, 3, or 4, a first power source that applies a sputtering voltage between the target, the sputtering target, and the first deposition preventive plate, the sputtering target, and the second sputtering target.
And a second power source for applying an electric field between the plate and the deposition preventive plate.

Further, the invention according to claim 6 is based on claim 1,
In the sputtering apparatus described in 2, 3, 4 or 5, the deposition preventive plate hides a third deposition preventive plate having a through hole through which the pedestal moves up and down, and a gap between the third deposition preventive plate and the pedestal. And a fourth deposition preventive plate.

Further, the invention according to claim 7 is based on claim 1,
In the sputtering apparatus described in 2, 3, 4 or 5, the deposition preventive plate includes a fifth deposition preventive plate having a through hole through which the pedestal moves up and down, and a sixth deposition preventive plate that is fixed to the pedestal side and moves with the pedestal. And the seventh anti-adhesion plate for covering the gap between the fifth anti-adhesion plate and the sixth anti-adhesion plate.

The invention according to claim 8 is the same as claim 1,
In the sputtering apparatus described in 2, 3, 4 or 5, the deposition-inhibitory plate is fixed to the cylindrical eighth deposition-inhibition plate and moves along with the pedestal, and the outer edge portion has the eighth deposition-inhibition plate. And a ninth deposition preventive plate that is fitted in a non-contact manner with the dressing plate.

[0018]

According to the above-mentioned invention, since the height of the deposition preventive plate in the peripheral portion of the pedestal supporting the sputter target is lower than that of the sputter target, it is peeled off from the sputter preventive plate. It is possible to prevent the thin film formed as a foreign substance from pouring onto the object to be sputtered, and it is possible to reliably reduce the amount of foreign matter attached to the object to be sputtered.

Further, according to the second aspect of the invention, since the diameter of the pedestal is smaller than that of the sputtering target object, the thin film peeled off from the peripheral portion of the pedestal becomes foreign matter and is unlikely to adhere to the upper sputtering target object. Therefore, it is possible to reduce foreign matters attached to the sputtering target.

According to the third aspect of the present invention, since the edge portion of the deposition-inhibitory plate exposed to the sputtering space has a rounded structure, the adhered state of the thin film by sputtering at the edge portion becomes stable, It is possible to prevent the increase of foreign matter due to the peeling of the attached thin film.

According to the fourth aspect of the present invention, by grounding the first deposition-inhibitory plate located near the target, that is, at a position away from the sputtering target,
The deposition of the thin film by sputtering is likely to be concentrated on the first deposition preventive plate, and the amount of the thin film deposited on the second deposition preventive plate near the sputtering target is relatively reduced. The amount of foreign matter attached to the sputtering target due to the peeling of the thin film from the plate is reduced.

According to the fifth aspect of the present invention, an electric field applied to the second deposition-inhibitory plate in the vicinity of the object to be sputtered causes the charged particles and the like in the sputtering process on the second deposition-inhibition plate. Adhesion is reduced, and adhesion of foreign matter to the sputtering target can be reduced.

According to the invention of claim 6, the fourth aspect is provided.
By setting the height of the deposition preventive plate to be lower than the height of the sputtering target object, it is possible to prevent foreign matters that fall off from the fourth deposition protection plate from adhering to the sputtering target object.

According to the invention of claim 7, the fifth aspect is provided.
By setting the position of the seventh deposition-inhibiting plate that covers the gap between the deposition-inhibition plate and the sixth deposition-inhibition plate to be lower than the height of the sputter target and further away from the sputter target, foreign matter can be prevented from adhering to the sputter target. Can be reduced.

According to the invention described in claim 8,
Since the fitting position of the deposition preventive plate and the ninth deposition preventive plate is separated from the sputtering target, it is possible to reduce the adhesion of foreign matter to the sputtering target.

As a result, it is possible to reduce the amount of foreign matter adhering to the object to be sputtered, extend the replacement period of the deposition preventive plate, improve the yield, shorten the downtime of the apparatus, and reduce the running cost.

[0027]

Embodiments of the present invention will now be described in detail with reference to the drawings.

(Embodiment 1) FIG. 1 is a schematic sectional view showing a part of a sputtering apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic sectional view showing an example of its entire structure. is there.

A pedestal 7 which is moved up and down by an elevating mechanism 21 is provided inside the processing chamber 3, and a wafer 9 is placed by a plurality of support pins 7a. The pedestal 7 is provided with a through hole 8 a through which the lift pin 8 penetrates.
And has a structure that moves up and down independently.

A target 5 is arranged above the pedestal 7 so as to face it, and a rotary permanent magnet 4 which is rotationally driven by a motor 4a and a gear 4b is provided on the back side of the target 5.

A transfer chamber 1 equipped with a robot 2 for transferring the wafer 9 is connected to a side surface of the processing chamber 3, and the pedestal 1 is opened through a transfer port 1a formed at the height of the descending position of the pedestal 7. The wafer 9 is placed on and taken out from the wafer 7. The transfer port 1a has an opening / closing mechanism 2
It is opened and closed by 3, and the airtightness inside the processing chamber 3 is maintained except during transportation.

A gas supply pipe 10 is connected to the processing chamber 3, and a sputtering gas 10a such as argon gas is introduced into the processing chamber 3.

Inside the processing chamber 3, a cup-shaped deposition preventive plate 6 is provided so as to surround a sputter space formed between the target 5 and the pedestal 7 in an ascending state.
The upper edge of the deposition preventive plate 6 is fixed to the processing chamber. A sputtering voltage 11 is applied between the deposition preventive plate 6 and the target 5 via an insulator 24 so as to be insulated.

At the center of the lower end of the deposition preventive plate 6, the target 5
A through hole 6b having a folded wall 6a that is folded back in a ring shape is provided on the side of, and the pedestal 7 on which the wafer 9 is placed moves up and down through the through hole 6b to enter and leave the sputtering space.

The folded-back wall 6a of the deposition-inhibitory plate 6 is a fitting groove 6d of a doughnut-shaped movable deposition-inhibitory plate 6c independent of the deposition-inhibition plate 6.
It has a structure that fits in. On the lower surface of the inner peripheral edge of the movable deposition-inhibitory plate 6c, a step structure 7 is provided so as to project from the outer peripheral portion of the pedestal 7.
An inner protrusion 6e and an outer protrusion 6f higher than the inner protrusion are formed so as to sandwich b, and in a state where the outer protrusion 6f is in contact with the pedestal 7, the inner protrusion 6e and the outer protrusion 6f and the step on the pedestal 7 side are formed. A space having a complicated cross-sectional shape is formed between the structure 7b and the structure 7b.

In this case, the entire size of the upper surface of the movable deposition-inhibitory plate 6c is smaller than the height of the wafer 9 placed on the pedestal 7 by the dimension d when it is in contact with the pedestal 7. In addition to being set, the inner peripheral edge including the inner protrusion 6e, and further the outer peripheral edge protruding outward,
Rounding R1 and rounding R2 are performed. Further, rounding R3 and rounding R4 are also applied to the corner portion of the cup-shaped attachment preventing plate 6 and the folded wall 6a, respectively.

The outer edge portion 7c of the mounting region of the wafer 9 on the pedestal 7 has a smaller outer diameter than the outer diameter of the wafer 9, that is, the step portion is hidden behind the wafer 9 when viewed from the target 5 side. 7d is engraved and rounded R5.

An example of the operation of the sputtering apparatus of this embodiment will be described below.

First, the pedestal 7 and the lift pin 8 are lowered. At this time, the movable deposition preventing plate 6c descends to a height at which the bottom portion of the fitting groove 6d abuts the upper end of the folding wall 6a.

Next, the transfer port 1a is opened, and the unprocessed wafer 9 is carried into the processing chamber 3 directly above the pedestal 7 by the robot 2 and delivered to the lift pins 8 protruding above the pedestal 7. By gently raising the pedestal 7, the wafer 9 is removed from the pedestal 7.
Is placed on a plurality of support pins 7a of
Is closed, and the pedestal 7 is raised to move the wafer 9 into the sputtering space. At this time, the outer projection 6f of the movable deposition-inhibitory plate 6c comes into contact with the outer edge portion of the pedestal 7, so that the movable deposition-inhibition plate 6c is lifted to the height illustrated in FIG. 1 and stands still.

Thereafter, for example, the processing chamber 3 is evacuated to a high vacuum (1
0 ^-6 after removing the residual gas is evacuated to Pa order), and a target 5 (cathode) sputtering gas 10a such as A _r a (10 ^-1 Pa order) as a medium, the wafer 9 and the adhesion-preventing plate 6,
A sputtering voltage 11 is applied between the movable deposition-inhibitory plates 6c (anode), and a magnetron discharge 12 is generated where the electric field generated by the sputtering voltage 11 and the magnetic field of the rotating permanent magnet 4 are orthogonal to each other. Sputtering gas ions 13 generated by the magnetron discharge 12 collide with the target 5 and scatter particles 14 of the substance forming the target 5. The particles 14 are deposited on the wafer 9 to form a film.

At this time, a thin film is simultaneously deposited on the deposition-inhibiting plate 6 and the movable deposition-inhibiting plate 6c other than the wafer 9 surrounding the magnetron discharge 12, and the peeled-off thin film becomes a foreign substance in the past and becomes a foreign substance on the surface of the wafer 9. On the surface of the product, causing product defects.

However, in the case of this embodiment, the wafer 9
Since the height of the movable deposition-inhibitory plate 6c located around the pedestal 7 on which is mounted is lower than the wafer 9 by the dimension d, the thin film peeled from the movable deposition-inhibition plate 6c becomes a foreign substance. Adhesion to the surface of the wafer 9 is prevented.

Since the step portion 7d is carved so that the outer diameter of the outer edge portion 7c of the mounting area of the wafer 9 on the pedestal 7 is smaller than the outer diameter of the wafer 9, Even if peeling of the thin film occurs in the outer region, the thin film is prevented from becoming a foreign matter and adhering to the wafer 9.

Further, by performing the rounding processes R1 to R5 on the exposed portion of the deposition-inhibiting plate 6, the movable deposition-inhibiting plate 6c, and the magnetron discharge 12 in the pedestal 7, the adhesion state of the thin film at the relevant portion is stabilized, The peeling of the adhered thin film is less likely to occur.

As a result, in the sputtering apparatus of this embodiment, the adhesion of foreign matter from the deposition-inhibitory plate 6, the movable deposition-inhibitory plate 6c, etc. to the wafer 9 is reliably reduced, and product defects caused by the foreign matter occur. In addition, the frequency of replacement of the deposition-prevention plate 6, the movable deposition-prevention plate 6c, etc. can be reduced, and cost reduction in the sputtering process can be realized.

(Embodiment 2) FIG. 3 is a schematic sectional view showing a part of a sputtering apparatus according to another embodiment of the present invention, and FIG. 4 is a schematic sectional view showing an example of the entire structure. Is.

In the case of the second embodiment, a cup-shaped attachment plate 61 having an upper edge fixed to the processing chamber 3 side and a pedestal 70 side fixed and movable up and down together with the pedestal 70. Anti-adhesion plate 62, anti-adhesion plate 61 and movable anti-adhesion plate 6
It differs from the case of the first embodiment in that it is constituted by the deposition preventing plate 63 that covers the gap of 2.

That is, in the deposition-inhibiting plate 61, the through hole 61b is opened in the central portion, and the inner peripheral edge of the through hole 61b is a folded wall 61a folded back to the target 5 side.

The movable deposition preventive plate 62 is provided on each of the inner peripheral edge and the outer peripheral edge which are fixed to the pedestal 70 side.
It has a donut shape in which a folded back wall 62a and a folded back wall 62b are formed.

The anti-adhesion plate 63 has a donut shape in which the folded wall 63a and the folded wall 63b are formed in the inner peripheral edge and the outer peripheral edge, respectively, and has a reverse U-shaped cross section, and the folded wall 63a and the folded wall 63b are provided. By inserting the folded-back wall 61a of the deposition-inhibitory plate 61 and the folded-back wall 62b of the movable deposition-inhibition plate 62 in between, without restraining the free vertical movement of the movable deposition-inhibition plate 62 with respect to the deposition-inhibition plate 61,
The structure is such that the gap between the two is hidden from the magnetron discharge 12.

That is, the deposition-prevention plate 63 is installed with the tip of the outer folded wall 63b in contact with the bottom of the deposition-prevention plate 1 over the entire circumference thereof, and the movable deposition-prevention plate 62 moves up and down together with the pedestal 70. The folding wall 62b of the non-folding wall 62b is located in a space between the folding wall 63a inside the deposition preventing plate 63 and the folding wall 61a of the deposition preventing plate 61 at a position where the pedestal 70 is raised to a height at which a normal sputtering operation is performed. The contact is entered, and thereby, the space below the deposition-inhibiting plate 61, the movable deposition-inhibiting plate 62, and the pedestal 70 is reliably hidden from the sputtering space in which the magnetron discharge 12 is formed.

The positions of the movable deposition-inhibitory plate 62 and the deposition-inhibition plate 63 in the peripheral portion of the wafer 9 placed on the pedestal 70 are the same as the dimension d1 above the plane of the wafer 9 at the top of the highest deposition-inhibition plate 63. It is set to be low. In addition, the deposition preventive plate 61 facing the magnetron discharge 12, the movable deposition preventive plate 6
2. The bending portion of the adhesion-preventing plate 63 is rounded R6, rounded R7, rounded R8, and rounded R9.

The outer diameter of the pedestal 70 is the same as the wafer 9
Is set to be smaller than the outer diameter, and rounding R10 is applied to the outer peripheral edge thereof.

As described above, also in the case of the sputtering apparatus of this embodiment, the height of the movable deposition-preventing plate 62 and the deposition-preventing plate 63 around the wafer 9 is set lower than the height of the wafer 9. Therefore, even if the thin films attached to the movable deposition-prevention plate 62 and the deposition-prevention plate 63 are peeled off, the probability that they become foreign matter and attach to the upper wafer 9 is reduced, and the foreign matter attached to the wafer 9 can be reliably reduced. It will be possible.

Since the adhesion-preventing plate 61, the movable adhesion-preventing plate 62, the adhesion-preventing plate 63, and the corners of the thin film adhesion region such as the outer edge of the pedestal 70 are rounded R6 to R10, The adhered state of the thin film on each of the parts is stabilized, and the generation of foreign matter due to the peeling of the thin film is reduced. Also, the frequency of replacement of the deposition-prevention plate 61, the movable deposition-prevention plate 62, the deposition-prevention plate 63, etc. is reduced.

(Embodiment 3) FIG. 5 is a schematic sectional view showing a main portion of a sputtering apparatus according to still another embodiment of the present invention.

In the case of the third embodiment, a substantially cylindrical protection plate 64 having its upper edge fixed to the processing chamber side and a movable protection plate which is supported on the pedestal 71 side and moves up and down together with the pedestal 71. And a mounting plate 65.

The lower end of the deposition-inhibitory plate 64 is bent substantially horizontally inward to form a shield wall 64a.

The movable deposition preventive plate 65 is lowered along the stepped portion 71a of the pedestal 71 toward the outer side (stepped portion 7).
1a is formed so that it is lower than the wafer 9 by a dimension d2 in the horizontal portion of the la 1a, and the outer peripheral portion is covered with the shield wall 64a of the deposition-preventing plate 64.
Is provided with a bending wall 65a formed by bending and forming a substantially U-shape so as to wrap around. That is, in the case of the present embodiment, the fixed deposition preventing plate 64 and the gas introduction portion 72 of the movable deposition preventing plate 65 are located farthest from the outer periphery of the wafer 9.

The stepped portion 71 of the pedestal 71
a is the outer diameter of the central portion 71b immediately below the wafer 9
Is formed to be smaller than the outer diameter of. At the outer edge of the central portion 71b, and further at the corners of the step portion 71a,
A rounding process R11, a rounding process R12, and a rounding process R13 are performed, and similarly, a corner portion of the bending wall 65a of the movable deposition preventing plate 65,
Rounding R14 and rounding R1 are also applied to the corners of the adhesion-preventing plate 64.
5, Rounded R16 is applied.

As described above, also in the case of this embodiment, the position of the movable deposition preventive plate 65 located around the wafer 9 is set lower than the position of the wafer 9 and foreign matter is generated. Since the gas introduction portion 72 between the easily-adhesion-preventing plate 64 and the movable anti-adhesion plate 65 is at the position farthest from the wafer 9, the foreign matter is scattered due to the peeling of the thin film attached to the anti-adhesion plate 64 and the movable anti-adhesion plate 65. It becomes difficult for the particles to adhere to the wafer 9, and the adhered foreign matters can be reduced.

Further, the pedestal 71, the deposition preventive plate 64,
Since the corner portions of the movable deposition preventive plate 65 are rounded R11 to R16, the adhesion state of the thin film becomes stable, and the deposition preventive plate 6
4. It is possible to reduce foreign matter generated by peeling of the thin film on the movable deposition-inhibitory plate 65 and the like.

(Embodiment 4) FIG. 6 is a schematic sectional view showing an example of the structure of a sputtering apparatus according to still another embodiment of the present invention.

In the case of the fourth embodiment, the deposition preventive plate 61 in the configuration of the embodiment 2 is used as the earth shield 66 in the vicinity of the target 5 and the shield cover 6 as a normal deposition preventive plate.
The separation into No. 7 is different from that in Example 2.

That is, the earth shield 66 is electrically separated from the target 5 by the insulator 24, and the shield cover 67 is electrically separated from both the target 5 and the earth shield 66 by the insulator 25. A rounding R17 is applied to the lower edge of the earth shield 66 near the target 5.

Then, the sputtering voltage 11 is applied between the earth shield 66 and the target 5, and thereby sputtering is performed.

Further, in this case, the particle adhesion blocking voltage 15 is applied between the wafer 9 and the shield cover 67 other than the ground shield 66, the adhesion preventing plate 63, and the movable adhesion preventing plate 62, and the charges are applied. By repelling the held particles 16, the shield cover 67, the deposition preventive plate 63, the movable deposition preventive plate 62
It is configured such that the thin film is less likely to adhere to the substrate and the formation of the thin film on the region other than the wafer 9 is suppressed.

As described above, in the sputtering apparatus of this embodiment, the earth shield 66 near the target 5 is electrically separated from the shield cover 67, the deposition-prevention plate 63, the movable deposition-prevention plate 62, etc. Other than 9, the formation of a thin film is likely to occur on the earth shield 66 located far from the wafer 9, and the rounding process R1 is performed on the lower edge.
By applying No. 7, the adhesion state of the thin film is stabilized, and the amount of foreign matter attached to the wafer 9 due to the peeling of the thin film from the earth shield 66 is reduced.

Further, the shield cover 6 near the wafer 9
Since the thin film formation is suppressed by applying the particle adhesion blocking voltage 15 to the 7, adhesion-preventing plate 63, movable adhesion-preventing plate 62, etc., it is caused by the peeling of the thin film from the region.
The amount of foreign matter attached to the wafer 9 is reduced.

As a result, the yield of the wafer 9 is improved by reducing foreign matters, and the earth shield 66 is protected by the shield cover 6.
7. It is possible to extend the replacement cycle of parts such as 7, the adhesion-preventing plate 63 and the movable adhesion-preventing plate 62.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.

[0073]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows.

That is, according to the sputtering apparatus of the present invention, it is possible to improve the yield, reduce the down time of the apparatus, and reduce the running cost by reducing the foreign matter attached to the sputtering target. Is obtained.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a part of a sputtering apparatus according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view showing an example of the overall configuration.

FIG. 3 is a schematic sectional view showing a part of a sputtering apparatus according to a second embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view showing an example of the overall configuration.

FIG. 5 is a schematic cross-sectional view showing the main parts of a sputtering apparatus that is Embodiment 3 of the present invention.

FIG. 6 is a schematic cross-sectional view showing an example of the configuration of a sputtering apparatus that is Embodiment 4 of the present invention.

[Explanation of symbols]

 1 Transport Chamber 1a Transport Port 2 Robot 3 Processing Chamber 4 Rotating Permanent Magnet 4a Motor 4b Gear 5 Target 6 Attachment Plate 6a Folding Wall 6b Through Hole 6c Movable Attachment Plate 6d Fitting Groove 6e Inner Protrusion 6f Outer Protrusion 7 Pedestal 7a Support Pin 7b Step structure 7c Outer edge 7d Step 8 Lift pin 8a Through hole 9 Wafer 10 Gas supply pipe 10a Sputtering gas 11 Sputtering voltage 12 Magnetron discharge 13 Sputtering gas ion 14 Particles 15 Particle adhesion blocking voltage 16 Particles 21 Lifting mechanism 22 Lifting mechanism 23 Opening / closing mechanism 24 Insulator 25 Insulator 61 Defensive plate 61a Folding wall 61b Through hole 62 Movable proof plate 62a Folding wall 62b Folding wall 63 Protective plate 63a Folding wall 63b Folding wall 64 Protective plate 64a Shielding wall 65 Movable proof Plate 65a Bending wall 6 earth shield 67 shield cover 70 Pedestal 71 pedestal 71a stepped portion 71b central portion 72 gas inlet R1~R17 rounding processing

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Koichi Koyanagi, 3-3 Fujibashi, Ome, Tokyo 2-3 Hitachi Hitachi Electronics Co., Ltd. (72) Inventor Satoshi Suzuki, 3-3 Fujibashi, Ome, Tokyo 2 Hitachi Within Tokyo Electronics Co., Ltd. (72) Inventor Jiro Sakaguchi, 3-3 Fujitabashi, Ome, Tokyo 2-3 Hitachi inside Tokyo Electronics Co., Ltd. (72) Tadao Sakamoto, 3-3 Fujibashi, Ome-shi, Tokyo 2 Hitachi Tokyo Electronics Co., Ltd.

Claims (8)

[Claims] 1. A pedestal disposed in a processing chamber for supporting a sputtering target, a target disposed above the pedestal so as to face the sputtering target, and the target and the sputtering target face each other. A sputtering apparatus comprising a deposition preventive plate for hiding the wall surface of the processing chamber from the sputtering space, wherein the peripheral region of the pedestal in the deposition preventive plate is lower than the sputtering target. Sputtering equipment. 2. The pedestal supports the back surface of the sputter target by point contact, and the caliber of the pedestal is smaller than the caliber of the sputter target.
The sputter device described. 3. The sputtering apparatus according to claim 1, wherein an edge portion of the deposition preventive plate exposed to the sputtering space has a rounded structure. 4. The deposition preventing plate is separated into a first deposition preventing plate located near the target and a second deposition preventing plate other than the target, and only the first deposition preventing plate is grounded. The sputtering apparatus according to claim 1, wherein 5. A first power source for applying a sputtering voltage between the target, the sputtering target and the first deposition prevention plate, and between the sputtering target and the second deposition protection plate. 5. The sputtering apparatus according to claim 1, further comprising a second power source for applying an electric field to the. 6. The anti-adhesion plate includes a third anti-adhesion plate having a through hole through which the pedestal moves up and down, and a fourth anti-adhesion plate that hides a gap between the third anti-adhesion plate and the pedestal. The sputtering apparatus according to claim 1, 2, 3, 4, or 5, comprising a deposition plate. 7. The anti-adhesion plate includes a fifth anti-adhesion plate having a through hole through which the pedestal moves up and down, and a sixth anti-adhesion plate fixed to the pedestal side and moving together with the pedestal. And a seventh adhesion preventing plate for covering a gap between the fifth adhesion preventing plate and the sixth adhesion preventing plate.
4. The sputtering apparatus according to 4 or 5. 8. The protection plate is a cylindrical eighth protection plate,
The ninth attachment plate that is fixed to the pedestal side and moves together with the pedestal, and has an outer edge portion that fits in a non-contact manner with the eighth attachment plate.
The sputtering apparatus according to 2, 3, 4 or 5.