JPH07120791A - Active matrix liquid crystal display device - Google Patents
Active matrix liquid crystal display deviceInfo
- Publication number
- JPH07120791A JPH07120791A JP27027193A JP27027193A JPH07120791A JP H07120791 A JPH07120791 A JP H07120791A JP 27027193 A JP27027193 A JP 27027193A JP 27027193 A JP27027193 A JP 27027193A JP H07120791 A JPH07120791 A JP H07120791A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- display device
- crystal display
- electrode
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 47
- 239000011159 matrix material Substances 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 15
- 230000005684 electric field Effects 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000003870 refractory metal Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000004904 shortening Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000011651 chromium Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
(57)【要約】
【目的】薄膜ダイオードを用いたアクティブマトリク型
液晶表示装置で、視角拡大と工程数短縮が可能な製法を
提供する。
【構成】画素内に金属／絶縁膜／金属から構成される薄
膜ダイオードを有するアクティブマトリクス型液晶表示
装置で、ダイオード電極４と対向基板側に設けられた信
号電極間とに生じる電界は、主として液晶層に平行に印
加されている液晶表示装置を提供する。
(57) [Summary] [Objective] To provide a manufacturing method capable of enlarging the viewing angle and shortening the number of steps in an active matrix type liquid crystal display device using a thin film diode. In an active matrix type liquid crystal display device having a thin film diode composed of metal / insulating film / metal in a pixel, an electric field generated between a diode electrode 4 and a signal electrode provided on a counter substrate side is mainly a liquid crystal. A liquid crystal display device is provided that is applied parallel to the layers.
Description
【０００１】[0001]
【産業上の利用分野】本発明はアクティブマトリクス型
液晶表示装置に係り、特に、薄膜ダイオードを用いたア
クティブマトリクスパネルにおける視角拡大と工程数短
縮を図ったものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device, and more particularly to an expansion of the viewing angle and a reduction in the number of steps in an active matrix panel using a thin film diode.
【０００２】[0002]
【従来の技術】従来の薄膜ダイオードを有するアクティ
ブマトリクス型液晶表示装置の構成は、例えばプロシー
ディングス オブ ザ ナインス インターナショナル
ディスプレイ リサーチ コンファレンス(Proceedin
gs of the 9th InternationalDisplay Research Confer
ence, Oct.,Kyoto, pp.168−171）に記載されている。
図５は従来の画素部の断面図を示したものであり、図中
で、５は液晶に印加される電界の向き、３０は走査電極
側ガラス基板、３１はタンタル、３２はタンタルオキサ
イド、３３はクロム、３４はＩＴＯ、３５は下部の配向
膜、３６は液晶、３７は上部の配向膜、３８はＩＴＯ、
３９は信号電極側ガラス基板である。2. Description of the Related Art The structure of a conventional active matrix type liquid crystal display device having a thin film diode is disclosed in, for example, Proceedings of the Nineth International Display Research Conference.
gs of the 9th InternationalDisplay Research Confer
ence, Oct., Kyoto, pp.168-171).
FIG. 5 is a cross-sectional view of a conventional pixel portion, in which 5 is the direction of the electric field applied to the liquid crystal, 30 is the scanning electrode side glass substrate, 31 is tantalum, 32 is tantalum oxide, and 33 is. Is chromium, 34 is ITO, 35 is a lower alignment film, 36 is a liquid crystal, 37 is an upper alignment film, 38 is ITO,
Reference numeral 39 is a signal electrode side glass substrate.
【０００３】[0003]
【発明が解決しようとする課題】上記従来技術では、二
つのガラス基板３０，３９に挟まれた液晶３６に対して
主に垂直に電界５が印加される。この方式では、画素電
極となるＩＴＯ３４は必須であり、その結果、アクティ
ブマトリクス基板の製造工程数は増加する。また、液晶
の駆動方式では、液晶の光学特性により視角特性も悪く
なる。In the above prior art, the electric field 5 is applied mainly perpendicularly to the liquid crystal 36 sandwiched between the two glass substrates 30 and 39. In this method, the ITO 34 serving as the pixel electrode is essential, and as a result, the number of manufacturing steps of the active matrix substrate increases. Further, in the liquid crystal driving method, the viewing angle characteristics are deteriorated due to the optical characteristics of the liquid crystal.
【０００４】本発明の目的は、視角が拡大され、工程数
が短縮されたアクティブマトリクス基板を提供すること
にある。An object of the present invention is to provide an active matrix substrate having a wide viewing angle and a reduced number of steps.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するた
め、本発明は、画素内に金属／絶縁膜／金属から構成さ
れる薄膜ダイオードを有するアクティブマトリクス型液
晶表示装置で、ダイオード電極と対向基板側に設けられ
た信号電極間とに生じる電界は、主として液晶層に平行
に印加される。ここで、前記液晶表示装置の薄膜ダイオ
ードはＣｒ，Ｍｏ等の高融点金属／窒化シリコン膜／Ｃ
ｒ，Ｍｏ等の高融点金属から構成され、ダイオード電極
の一部は、次段（前段）の走査電極と重なっている。In order to achieve the above object, the present invention is an active matrix type liquid crystal display device having a thin film diode composed of a metal / insulating film / metal in a pixel, and a diode electrode and a counter substrate. The electric field generated between the signal electrodes provided on the side is mainly applied in parallel to the liquid crystal layer. Here, the thin film diode of the liquid crystal display device is a refractory metal such as Cr or Mo / silicon nitride film / C.
The diode electrode is made of a refractory metal such as r or Mo, and a part of the diode electrode overlaps with the scanning electrode of the next stage (previous stage).
【０００６】[0006]
【作用】上記方式では、ダイオード電極と信号電極との
間に存在する液晶層に、電界を主に平行に印加させ、液
晶の透過率を変化させて任意の表示画像を得る。したが
って、上記方式では画素電極となるＩＴＯは不要であ
る。よって、アクティブマトリクス基板の製造工程数は
短縮される。また、上記方式では従来方式と比べて視角
が拡大される。これは、本発明の表示モードでは液晶分
子の長軸は基板と常にほぼ平行であり、立ち上がること
がなく、従って視角方向を変えた時の明るさの変化が小
さい理由による。なお、従来のＴＮ型のように液晶分子
長軸を基板界面に垂直に立ち上がらせる場合だと、複屈
折位相差が０となる視角方向は正面、すなわち、基板界
面に垂直な方向のみであり、僅かでも傾斜すると複屈折
位相差が現れ、ノーマリオープン型では光が漏れ、コン
トラストの低下や階調レベルの反転を引き起こす。According to the above method, an electric field is mainly applied in parallel to the liquid crystal layer existing between the diode electrode and the signal electrode, and the transmittance of the liquid crystal is changed to obtain an arbitrary display image. Therefore, the above-mentioned method does not require the ITO serving as the pixel electrode. Therefore, the number of manufacturing steps of the active matrix substrate is shortened. In addition, the viewing angle is enlarged in the above method compared to the conventional method. This is because, in the display mode of the present invention, the long axis of the liquid crystal molecule is always substantially parallel to the substrate and does not rise, and therefore the change in brightness when the viewing angle direction is changed is small. In the case of raising the liquid crystal molecule long axis perpendicular to the substrate interface as in the conventional TN type, the viewing angle direction in which the birefringence phase difference becomes 0 is only the front direction, that is, the direction perpendicular to the substrate interface, A slight inclination causes a birefringence phase difference, and in the normally open type, light leaks, which causes deterioration of contrast and inversion of gradation level.
【０００７】さらに、上記方式ではダイオード電極の一
部と次段（前段）の走査電極とを重ねることにより保持
容量が形成されるので、ダイオードオフ時の容量結合に
よる電位の変動，液晶抵抗による電位の低下等が低減さ
れるので表示品質が向上する。Further, in the above-mentioned method, since the storage capacitor is formed by overlapping a part of the diode electrode and the scanning electrode of the next stage (previous stage), the potential variation due to the capacitive coupling when the diode is off and the potential due to the liquid crystal resistance. And the like are reduced, so that the display quality is improved.
【０００８】以上、本発明では液晶に対して主に平行に
電界を印加するので従来画素電極として用いてきたＩＴ
Ｏは不要となり、その結果、液晶を用いたアクティブマ
トリクス基板の製造工程数は短縮され、液晶の視角特性
も拡大される。As described above, according to the present invention, the electric field is mainly applied to the liquid crystal in parallel, so that the IT which has been used as the conventional pixel electrode is used.
O is unnecessary, and as a result, the number of manufacturing steps of the active matrix substrate using the liquid crystal is shortened and the viewing angle characteristics of the liquid crystal are expanded.
【０００９】[0009]
【実施例】以下、本発明の実施例を図面を参照して詳細
に説明する。Embodiments of the present invention will now be described in detail with reference to the drawings.
【００１０】図１は本発明を用いた場合の画素部の平面
図の第一実施例である。図中で、１は走査電極が存在す
る領域、２は窒化シリコン膜が存在する領域、３は対向
基板側に設けられた信号電極、４はダイオード電極、５
は液晶層に印加される電界の向きを示したものである。
薄膜ダイオードは走査電極，窒化シリコン膜、及びダイ
オード電極４の重なり部分で形成されており、走査電極
とダイオード電極４の材料としてはＣｒ，Ｍｏ等の高融
点金属が好ましい。その動作は、１フレーム毎に任意の
走査電極にダイオードがオン状態になる電圧が印加さ
れ、その電圧が直接、ダイオード電極４に印加される。
次にダイオードがオフ状態になった後は、ダイオード電
極４の電位と信号電極３との電位差で生じる電界５で液
晶の光学特性を変化させ任意の表示画像を得る。ここ
で、対向基板側に設けられた信号電極３には常時、任意
の画像電圧が印加されている。図より、本発明では従来
用いられてきた画素電極用透明導電膜は不要である。し
たがって、液晶表示装置の製造工程数は低減される。ま
た、本発明のように液晶層を平行な電界により制御する
液晶駆動方式では、視角方向を変えた時の明るさの変化
が小さいので視角が拡大される。FIG. 1 is a first embodiment of a plan view of a pixel portion when the present invention is used. In the figure, 1 is a region where a scanning electrode is present, 2 is a region where a silicon nitride film is present, 3 is a signal electrode provided on the counter substrate side, 4 is a diode electrode, 5
Indicates the direction of the electric field applied to the liquid crystal layer.
The thin film diode is formed by the overlapping portion of the scanning electrode, the silicon nitride film, and the diode electrode 4, and the material of the scanning electrode and the diode electrode 4 is preferably a refractory metal such as Cr or Mo. In the operation, a voltage for turning on the diode is applied to an arbitrary scanning electrode for each frame, and the voltage is directly applied to the diode electrode 4.
Next, after the diode is turned off, the optical characteristic of the liquid crystal is changed by the electric field 5 generated by the potential difference between the diode electrode 4 and the signal electrode 3, and an arbitrary display image is obtained. Here, an arbitrary image voltage is always applied to the signal electrode 3 provided on the counter substrate side. As shown in the figure, the transparent conductive film for pixel electrodes which has been conventionally used is not necessary in the present invention. Therefore, the number of manufacturing steps of the liquid crystal display device is reduced. Further, in the liquid crystal driving method in which the liquid crystal layer is controlled by the parallel electric field as in the present invention, the change in the brightness when the viewing angle direction is changed is small, so that the viewing angle is expanded.
【００１１】図２は本発明を用いた場合の画素部の断面
図を示したものである。図中で、３は対向基板側に設け
られた信号電極、４はダイオード電極、５は液晶層に印
加される電界の向き、６は走査電極側ガラス基板、７は
走査電極、８は窒化シリコン膜、１０は窒化シリコン
膜、１１は下部の配向膜、１２は液晶、１３は上部の配
向膜、１５は信号電極側ガラス基板である。図中に示す
ように、ガラス基板６上のダイオード電極４と対向ガラ
ス基板１５上の信号電極３とにより生じた電界５により
液晶１２の光学特性を制御する。なお、本発明の実施例
では信号電極は対向基板側に設けられているが、走査電
極側ガラス基板上に信号電極が設けられていても問題は
ない。この構成だと、対向基板側に電極を設ける必要は
ない。FIG. 2 is a sectional view of a pixel portion when the present invention is used. In the figure, 3 is a signal electrode provided on the counter substrate side, 4 is a diode electrode, 5 is the direction of the electric field applied to the liquid crystal layer, 6 is a scanning electrode side glass substrate, 7 is a scanning electrode, and 8 is silicon nitride. A film, 10 is a silicon nitride film, 11 is a lower alignment film, 12 is a liquid crystal, 13 is an upper alignment film, and 15 is a signal electrode side glass substrate. As shown in the figure, the optical characteristics of the liquid crystal 12 are controlled by the electric field 5 generated by the diode electrode 4 on the glass substrate 6 and the signal electrode 3 on the counter glass substrate 15. In the embodiment of the present invention, the signal electrode is provided on the counter substrate side, but there is no problem if the signal electrode is provided on the scanning electrode side glass substrate. With this configuration, it is not necessary to provide an electrode on the counter substrate side.
【００１２】図３は本発明を用いた場合の画素部の等価
回路を示したものであり、２０は走査線、２１は信号
線、２２はダイオード抵抗、２３はダイオード容量、２
４は液晶抵抗、２５は液晶容量である。図より、画像表
示電圧の一つであるダイオード電極の電位ＶD は、容量
結合、液晶抵抗の低下等により変動し、その結果、表示
品質が劣化する。FIG. 3 shows an equivalent circuit of a pixel portion when the present invention is used. 20 is a scanning line, 21 is a signal line, 22 is a diode resistance, 23 is a diode capacitance, 2
Reference numeral 4 is a liquid crystal resistance, and 25 is a liquid crystal capacitance. From the figure, the potential V D of the diode electrode, which is one of the image display voltages, fluctuates due to capacitive coupling, decrease in liquid crystal resistance, etc., and as a result, display quality deteriorates.
【００１３】図４はこの課題も考慮に入れた場合の画素
部の平面図の実施例である。本実施例の特徴は、保持容
量を形成する目的でダイオード電極の一部と次段（前
段）の走査電極とを重ねていることである。このことに
より、容量結合，液晶抵抗の低下等が生じてもダイオー
ド電極の電位ＶD の変動量は低減できる。FIG. 4 is an embodiment of a plan view of the pixel portion in consideration of this problem. The feature of this embodiment is that a part of the diode electrode and the next stage (previous stage) scan electrode are overlapped for the purpose of forming a storage capacitor. This makes it possible to reduce the amount of change in the potential V D of the diode electrode even if capacitive coupling, a decrease in liquid crystal resistance, or the like occurs.
【００１４】[0014]
【発明の効果】本発明によれば、薄膜ダイオードを用い
たアクティブマトリクス型液晶表示装置で、ダイオード
電極と対向基板側に設けられた信号電極間とに生じる電
界は主として平行に液晶層に印加される。よって、従
来、画素電極として用いてきたＩＴＯは必要ないので液
晶表示装置の製造工程数は短縮される。また、この方式
では液晶の性質上、視角も拡大される。According to the present invention, in an active matrix type liquid crystal display device using a thin film diode, the electric field generated between the diode electrode and the signal electrode provided on the counter substrate side is mainly applied to the liquid crystal layer in parallel. It Therefore, since ITO which has been used as the pixel electrode in the past is not necessary, the number of manufacturing steps of the liquid crystal display device can be shortened. Further, in this method, the viewing angle is widened due to the nature of the liquid crystal.
【図１】本発明の画素部の第一実施例の平面図。FIG. 1 is a plan view of a first embodiment of a pixel portion of the present invention.
【図２】本発明の画素部の断面図。FIG. 2 is a cross-sectional view of a pixel portion of the present invention.
【図３】本発明の画素部の等価回路図。FIG. 3 is an equivalent circuit diagram of a pixel portion of the present invention.
【図４】本発明の画素部の第２実施例の平面図。FIG. 4 is a plan view of a second embodiment of the pixel section of the present invention.
【図５】従来の薄膜ダイオードを用いたアクティブマト
リクス型パネルの画素部の断面図。FIG. 5 is a sectional view of a pixel portion of an active matrix type panel using a conventional thin film diode.
１…走査電極が存在する領域、２…窒化シリコン膜が存
在する領域、３…信号電極（対向基板側）、４…ダイオ
ード電極、５…電界の向き。1 ... Area where scan electrode is present, 2 ... Area where silicon nitride film is present, 3 ... Signal electrode (opposite substrate side), 4 ... Diode electrode, 5 ... Direction of electric field.
Claims (4)
る薄膜ダイオードを有するアクティブマトリクス型液晶
表示装置において、ダイオード電極と対向基板側に設け
られた信号電極間とに生じる電界は、主として液晶層に
平行に印加されていることを特徴とする液晶表示装置。1. In an active matrix type liquid crystal display device having a thin film diode composed of metal / insulating film / metal in a pixel, an electric field generated between a diode electrode and a signal electrode provided on a counter substrate side is mainly A liquid crystal display device characterized by being applied in parallel to a liquid crystal layer.
極群はいずれも不透明性電極である液晶表示装置。2. The liquid crystal display device according to claim 1, wherein each of the electrode groups of the liquid crystal display device is an opaque electrode.
膜ダイオードはＣｒ，Ｍｏ等の高融点金属／窒化シリコ
ン膜／Ｃｒ，Ｍｏ等の高融点金属から構成される液晶表
示装置。3. The liquid crystal display device according to claim 1, wherein the thin film diode of the liquid crystal display device is composed of a refractory metal such as Cr and Mo / a silicon nitride film / a refractory metal such as Cr and Mo.
一部は次段の走査電極と重なっている液晶表示装置。4. The liquid crystal display device according to claim 1, wherein a part of the diode electrode overlaps a scanning electrode of a next stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27027193A JPH07120791A (en) | 1993-10-28 | 1993-10-28 | Active matrix liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27027193A JPH07120791A (en) | 1993-10-28 | 1993-10-28 | Active matrix liquid crystal display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07120791A true JPH07120791A (en) | 1995-05-12 |
Family
ID=17483930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27027193A Pending JPH07120791A (en) | 1993-10-28 | 1993-10-28 | Active matrix liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07120791A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5977562A (en) * | 1995-11-14 | 1999-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US6097465A (en) * | 1996-03-01 | 2000-08-01 | Semiconductor Energy Laboratory Co., Ltd. | In plane switching LCD with 3 electrode on bottom substrate and 1 on top substrate |
| US6160600A (en) * | 1995-11-17 | 2000-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Interlayer insulation of TFT LCD device having of silicon oxide and silicon nitride |
| US6243064B1 (en) | 1995-11-07 | 2001-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type liquid-crystal display unit and method of driving the same |
| US6911962B1 (en) | 1996-03-26 | 2005-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of active matrix display device |
-
1993
- 1993-10-28 JP JP27027193A patent/JPH07120791A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6621102B2 (en) | 1995-11-04 | 2003-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US6243064B1 (en) | 1995-11-07 | 2001-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type liquid-crystal display unit and method of driving the same |
| US6456269B2 (en) | 1995-11-07 | 2002-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type liquid-crystal display unit and method of driving the same |
| US5977562A (en) * | 1995-11-14 | 1999-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US6268617B1 (en) | 1995-11-14 | 2001-07-31 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US6160600A (en) * | 1995-11-17 | 2000-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Interlayer insulation of TFT LCD device having of silicon oxide and silicon nitride |
| US6963382B1 (en) | 1995-11-17 | 2005-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display and method of driving same |
| US9213193B2 (en) | 1995-11-17 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display and method of driving |
| US6097465A (en) * | 1996-03-01 | 2000-08-01 | Semiconductor Energy Laboratory Co., Ltd. | In plane switching LCD with 3 electrode on bottom substrate and 1 on top substrate |
| US6911962B1 (en) | 1996-03-26 | 2005-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of active matrix display device |
| US7336249B2 (en) | 1996-03-26 | 2008-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of active matrix display device |
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