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JPH0712034B2 - Jet type liquid treatment device - Google Patents

Jet type liquid treatment device

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Publication number
JPH0712034B2
JPH0712034B2 JP9930889A JP9930889A JPH0712034B2 JP H0712034 B2 JPH0712034 B2 JP H0712034B2 JP 9930889 A JP9930889 A JP 9930889A JP 9930889 A JP9930889 A JP 9930889A JP H0712034 B2 JPH0712034 B2 JP H0712034B2
Authority
JP
Japan
Prior art keywords
semiconductor wafer
jet
etching
liquid
type liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9930889A
Other languages
Japanese (ja)
Other versions
JPH02277237A (en
Inventor
政夫 住▲吉▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9930889A priority Critical patent/JPH0712034B2/en
Publication of JPH02277237A publication Critical patent/JPH02277237A/en
Publication of JPH0712034B2 publication Critical patent/JPH0712034B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Coating Apparatus (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Description

【発明の詳細な説明】 この発明は、半導体装置等の製造に必要な各種液処理工
程において用いられる噴流式液処理装置に関するもので
ある。
The present invention relates to a jet type liquid processing apparatus used in various liquid processing steps necessary for manufacturing a semiconductor device or the like.

〔従来の技術〕[Conventional technology]

半導体装置を製造する際には、エツチング工程や写真製
版の現像工程及び、水洗等各種の液処理が行なわれてい
る。第4図は従来の噴流式液処理装置の噴流カツプ部分
を示す斜視図である。第5図は従来の噴流式液処理装置
の処理液の流れを示す図である。この噴流カツプ(1)を
用いて、例えば半導体ウエハをエツチングする場合、図
に示す様に真空チヤツク(3)に半導体ウエハ(4)を真空吸
着により保持し、(真空ポンプ等は図示せず。)、次に
噴流カツプ(1)の上部に適当な間隔Dをあけて半導体ウ
エハ(4)を保持する。そして、噴流カツプ(1)の下方より
エツチング液(5)をカツプ内にポンプ等(図示せず)で
流入させると、エツチング液(5)は同図中の矢印の様
に、噴流カツプ(1)より噴出する。その結果エツチング
液(5)は、半導体ウエハ(4)と接触し半導体ウエハ(4)の
表面をエツチングした後、半導体ウエハ(4)の中心から
外周方向に流れて、噴流カツプ(1)の上部と半導体ウエ
ハ(4)との間隔Dを通過し外部に排出される。ここで、
一般にエツチング液(5)は、半導体ウエハ(4)に対するエ
ツチング速度を一定にする為、外部に設けられた温度調
整器等(図示せず)により液温を一定に保つている。
2. Description of the Related Art When manufacturing a semiconductor device, various liquid treatments such as an etching process, a photolithography developing process, and a water washing process are performed. FIG. 4 is a perspective view showing a jet cut portion of a conventional jet type liquid processing apparatus. FIG. 5 is a diagram showing the flow of a processing liquid in a conventional jet type liquid processing apparatus. When etching a semiconductor wafer using this jet cup (1), as shown in the figure, the semiconductor wafer (4) is held by vacuum suction on the vacuum chuck (3) (a vacuum pump and the like are not shown). ) Next, the semiconductor wafer (4) is held on the upper part of the jet cup (1) with an appropriate interval D. Then, when the etching liquid (5) is made to flow into the cut from below the jet cup (1) by a pump or the like (not shown), the etching liquid (5) is discharged from the jet cup (1) as shown by the arrow in the figure. ) Gush out. As a result, the etching liquid (5) contacts the semiconductor wafer (4) and etches the surface of the semiconductor wafer (4), and then flows from the center of the semiconductor wafer (4) toward the outer peripheral direction to the upper part of the jet cup (1). And passes through a space D between the semiconductor wafer and the semiconductor wafer and is discharged to the outside. here,
Generally, the etching liquid (5) is kept at a constant temperature by an external temperature controller or the like (not shown) in order to keep the etching speed for the semiconductor wafer (4) constant.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

従来の噴流式液処理装置は以上の様に構成されており、
噴流カツプ(1)より噴出するエツチング液(5)により半導
体ウエハ(4)をエツチングするものである。上記のよう
な従来の噴流式液処理装置ではエツチング液(5)の半導
体ウエハ(4)との接触時の流速が均一とならず噴流カツ
プ(1)の中央部分では下方から上昇してくるエツチング
液(5)が直接半導体ウエハに当たる為、外周部分より接
触時の流速が速くなり、半導体ウエハ(4)に対するエツ
チング速度は第7図の様な分布となる。その結果、第10
図の様に半導体ウエハ(4)面内におけるエツチング量に
よるばらつきを生じる。エツチング液(5)が半導体ウエ
ハ(4)の中心より外周方向にのみエツチング液(5)が流れ
る為、半導体ウエハ(4)を例えば凹にエツチングする場
合、凹部内ではエツチング液(5)の流れは第9図の様に
なる。すなわちエツチング液(5)の循環が不十分とな
り、図の様に形状がゆがんでエツチングされるという問
題点があつた。また、これらの問題点を解決する為の従
来技術としては第6図の様な真空チヤツク(3)を自転さ
せながら噴流カツプ(1)の中心軸に対して公転させる方
法が考案されているが、この技術ではエツチング液(5)
が半導体ウエハ(4)の裏面にまわり込み裏面をエツチン
グしたり、真空チヤツク(3)にエツチング液(5)が吸引さ
れるというような不都合が発生していた。
The conventional jet type liquid processing device is configured as described above,
The semiconductor wafer (4) is etched by the etching liquid (5) ejected from the jet cup (1). In the conventional jet type liquid processing apparatus as described above, the etching liquid (5) does not have a uniform flow velocity at the time of contact with the semiconductor wafer (4), and the etching that rises from below in the central portion of the jet cup (1). Since the liquid (5) directly contacts the semiconductor wafer, the flow velocity at the time of contact becomes faster than the peripheral portion, and the etching speed for the semiconductor wafer (4) has a distribution as shown in FIG. As a result, the tenth
As shown in the figure, variations occur depending on the etching amount in the plane of the semiconductor wafer (4). Since the etching liquid (5) flows only in the outer peripheral direction from the center of the semiconductor wafer (4), when the semiconductor wafer (4) is etched in a concave shape, for example, the etching liquid (5) flows in the concave portion. Is shown in Fig. 9. That is, there was a problem that the etching liquid (5) was not sufficiently circulated and the shape was distorted as shown in the figure to cause etching. Further, as a conventional technique for solving these problems, a method of revolving the vacuum chuck (3) around the central axis of the jet cup (1) while rotating the vacuum chuck (3) as shown in FIG. 6 has been devised. , Etching liquid with this technology (5)
However, there have been problems such that the wafer goes around to the back surface of the semiconductor wafer (4) to etch the back surface, and the etching liquid (5) is sucked into the vacuum chuck (3).

この発明は上記従来の問題点を解決するためになされた
もので被処理基板の同一面内上におけるエツチング量の
ばらつきが少なく、面精度の良い噴流式液処理装置を得
る事を目的としている。
The present invention has been made in order to solve the above-mentioned conventional problems, and an object of the present invention is to obtain a jet type liquid processing apparatus which has a small variation in etching amount on the same surface of a substrate to be processed and has high surface accuracy.

〔課題を解決する為の手段〕[Means for solving the problem]

この発明による噴流式液処理装置は、噴流カツプの中心
軸が共通でその中心軸からの半径が異なる円周上に排水
口を少なくとも二つ以上設けた事を特徴としている。
The jet type liquid treatment apparatus according to the present invention is characterized in that at least two drainage ports are provided on the circumference of the jet cup having a common central axis and different radii from the central axis.

〔作用〕[Action]

この発明による噴流式液処理装置は、噴流カツプ内の中
心軸が共通でその中心軸からの半径が異なる円周上に二
つ以上の排水口を設けることにより処理液の流れを複雑
にしたので、エツチング等の処理を行なつた場合にエツ
チング量のウエハ面内におけるばらつきを無くす事がで
きる。その結果半導体ウエハの面精度を良くすることが
出来る。
The jet type liquid treatment apparatus according to the present invention complicates the flow of the treatment liquid by providing two or more drainage ports on the circumference having a common central axis in the jet cup and different radii from the central axis. It is possible to eliminate variations in the etching amount within the wafer surface when processing such as etching is performed. As a result, the surface accuracy of the semiconductor wafer can be improved.

〔発明の実施例〕Example of Invention

以下、この発明の一実施例について図を用いて説明す
る。第1図は、この発明の一実施例を示す斜視図であ
る。第2図は第1図のものの上面図であり、噴流カツプ
(1)内に中心軸が共通でその中心軸からの半径が異なる
円周上に少なくとも二つ以上の排水口(6)を設けてある
ことを特徴としている。
An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view showing an embodiment of the present invention. FIG. 2 is a top view of the one shown in FIG.
(1) is characterized in that at least two drainage ports (6) are provided on the circumference having a common central axis and different radii from the central axis.

第3図は上記一実施例の装置を用いた時のエツチング液
の流れを示す噴流カツプの断面図である。例えば、半導
体ウエハ(4)をエツチングする時は真空チヤツク(3)に半
導体ウエハ(4)を真空吸着により保持し(真空ポンプ等
は図示せず。)、この場合噴流カツプ(1)の上に適当な
間隔Dをあけて半導体ウエハを保持する。そして、真空
チヤツク(3)を回転させることにより、半導体ウエハ(4)
を回転させながら、噴流カツプ(1)の下方よりエツチン
グ液(5)をカツプ内にポンプ(図示せず)で流入させる
とエツチング液(5)は同図中矢じるしの様に噴流カツプ
(1)の上部に流れ、半導体ウエハ(4)に触れて半導体ウエ
ハ(4)の表面をエツチングする。ここで第5図に示した
従来の噴流カツプ(1)では、エツチング液(5)が半導体ウ
エハ(4)にそつて中心部より外周方向の横方向に流れて
噴流カツプ(1)と半導体ウエハ(4)の間隔Dを通過して外
部に排出されるが、この発明による噴流カツプ(1)で
は、噴流カツプ(1)内の中心軸が共通で中心軸からの半
径が異なる円周上に排水口(6)を設けてあるので、エツ
チング液(5)は従来同様に噴流カツプ(1)と半導体ウエハ
(4)の間隔Dを通過して外部に排出されると共に、排水
口(6)にも流れ込み排出口(7)を通じて外部に排出され
る。このことからエツチング液(5)における半導体ウエ
ハ(4)に接している部分の流れは、従来の様に半導体ウ
エハ(4)の中心部より外周方向にのみ流れるのでは無
く、第11図の様に複雑な流れとなる。さらに半導体ウエ
ハ(4)自体も回転しているため半導体ウエハ(4)の表面上
においてエツチング液(5)の流れは、さらに複雑にな
る。
FIG. 3 is a sectional view of the jet cup showing the flow of the etching liquid when the apparatus of the above-mentioned embodiment is used. For example, when etching the semiconductor wafer (4), the semiconductor wafer (4) is held on the vacuum chuck (3) by vacuum suction (vacuum pump etc. is not shown), and in this case, it is placed on the jet cup (1). The semiconductor wafer is held at an appropriate distance D. Then, by rotating the vacuum chuck (3), the semiconductor wafer (4)
When the etching liquid (5) is made to flow from below the jet cup (1) into the cup by a pump (not shown) while rotating the jet, the etching liquid (5) is shown in the same figure as the arrow mark.
It flows to the upper part of (1) and touches the semiconductor wafer (4) to etch the surface of the semiconductor wafer (4). Here, in the conventional jet cup (1) shown in FIG. 5, the etching liquid (5) flows laterally from the center toward the semiconductor wafer (4) in the outer peripheral direction and the jet cup (1) and the semiconductor wafer (4). Although it is discharged to the outside after passing through the interval D of (4), in the jet cup (1) according to the present invention, the central axis in the jet cup (1) is common and the radius from the central axis is different on the circumference. Since the drainage port (6) is provided, the etching liquid (5) is the same as the conventional one with the jet cup (1) and the semiconductor wafer.
It passes through the interval D of (4) and is discharged to the outside, and also flows into the drain port (6) and is discharged to the outside through the discharge port (7). Therefore, the flow of the etching liquid (5) in the portion in contact with the semiconductor wafer (4) does not flow only in the outer peripheral direction from the central portion of the semiconductor wafer (4) as in the conventional case, but as shown in FIG. It becomes a complicated flow. Furthermore, since the semiconductor wafer (4) itself is also rotating, the flow of the etching liquid (5) on the surface of the semiconductor wafer (4) becomes more complicated.

その結果、第8図の様にエツチング速度は、半導体ウエ
ハ(4)上の任意の場所で一定となる。発明者の実験によ
れば例えば直径2インチのGaAsウエハを1μmエツチン
グした場合、ウエハ上のエツチング量のばらつきは±20
0Åと非常に面精度の良いエツチング結果が出た。
As a result, the etching speed becomes constant at any place on the semiconductor wafer (4) as shown in FIG. According to an experiment conducted by the inventor, when a GaAs wafer having a diameter of 2 inches is etched by 1 μm, the variation in the etching amount on the wafer is ± 20.
Etching results with very good surface accuracy of 0Å were obtained.

又、第9図に示したように従来凹部(8)をエッチングし
た時に生じた形状のゆがみも発生しなかつた。これは従
来の装置に比べ、エツチング液の流れが複雑になりエツ
チング液の循環が十分されている為であると思われる。
Further, as shown in FIG. 9, no distortion of the shape caused when the conventional recess (8) was etched was generated. This is considered to be because the etching liquid flow is complicated and the etching liquid is sufficiently circulated as compared with the conventional device.

なお、ここで、噴流カツプ(1)の直径や排水口(6)の位置
等は、エツチング等の各種液処理が行なわれる半導体ウ
エハ(4)の直径によつて決めれば良く、又、噴流カツプ
(1)と半導体ウエハ(4)との間隔Dやエツチング液(5)の
流速、温度等も、適宜選べば良い。
Here, the diameter of the jet cup (1), the position of the drain port (6), etc. may be determined according to the diameter of the semiconductor wafer (4) on which various liquid treatments such as etching are performed.
The distance D between the (1) and the semiconductor wafer (4), the flow velocity of the etching liquid (5), the temperature, etc. may be selected appropriately.

なお、実施例では、半導体ウエハのエツチングについて
説明したが、写真製版工程の現像や水洗等の各種洗浄工
程に用いることができる。又、半導体装置の製造以外に
も応用できることはいうまでもない。
Although the etching of the semiconductor wafer has been described in the embodiment, it can be used in various cleaning steps such as development and water washing in the photoengraving step. Further, it goes without saying that it can be applied to other than the manufacture of semiconductor devices.

〔発明の効果〕〔The invention's effect〕

以上の様に本発明による噴流式液処理装置は噴流カツプ
内の中心軸が共通で中心軸からの半径が異なる円周上に
少なくとも二つ以上の排水口を設け、液の流れを複雑に
し、エツチング速度を均一にしたのでエツチング量のば
らつきの少ない面精度の良い各種液処理を行なう事がで
きる。
As described above, the jet type liquid treatment apparatus according to the present invention has at least two drainage ports on the circumference where the central axes in the jet cups are common and the radii from the central axes are different, thereby complicating the liquid flow. Since the etching speed is made uniform, it is possible to perform various liquid treatments with good surface accuracy and little variation in etching amount.

【図面の簡単な説明】[Brief description of drawings]

第1図はこの発明による一実施例を示す斜視図、第2図
はその上面図、第3図はこの発明による一実施例の処理
液の流れを示す噴流式液処理装置の断面図、第4図は、
従来の噴流式液処理装置を示す斜視図、第5図は従来の
噴流式液処理装置の処理液の流れを示す噴流式液処理装
置の断面図、第6図は別の従来の噴流式液処理装置を示
す断面図、第7図は従来の噴流式液処理装置のエツチン
グ速度のウエハ面内における分布を示す分布図、第8図
はこの発明一実施例による噴流式液処理装置のエツチン
グ速度のウエハ面内における分布を示す分布図、第9図
は従来の噴流式液処理装置でエツチングをした時のウエ
ハ断面形状を示す断面図、第10図は従来の噴流式液処理
装置によつて処理した半導体ウエハのエツチング量のば
らつきを模式的に現わした断面図、第11図は本発明によ
る噴流式液処理装置によつて処理した半導体ウエハのエ
ツチング量のばらつきを模式的に現わした断面図であ
る。 図において、(1)は噴流カツプ、(2)は噴流カツプの開口
部、(3)は真空チヤツク、(4)は半導体ウエハ、(5)はエ
ツチング液、(6)は排水口、(7)は排出口である。 なお、図中同一符号は同一又は相当部分を示す。
FIG. 1 is a perspective view showing an embodiment according to the present invention, FIG. 2 is a top view thereof, and FIG. 3 is a sectional view of a jet type liquid processing apparatus showing the flow of a processing liquid according to an embodiment of the present invention. Figure 4 shows
FIG. 5 is a perspective view showing a conventional jet type liquid treatment apparatus, FIG. 5 is a sectional view of the jet type liquid treatment apparatus showing the flow of the treatment liquid of the conventional jet type liquid treatment apparatus, and FIG. 6 is another conventional jet type liquid treatment apparatus. FIG. 7 is a sectional view showing a processing apparatus, FIG. 7 is a distribution diagram showing a distribution of etching speed of a conventional jet type liquid processing apparatus in a wafer surface, and FIG. 8 is an etching speed of a jet type liquid processing apparatus according to an embodiment of the present invention. FIG. 9 is a distribution diagram showing the distribution in the plane of the wafer, FIG. 9 is a sectional view showing the cross-sectional shape of the wafer when etching is performed by the conventional jet type liquid processing apparatus, and FIG. FIG. 11 is a sectional view schematically showing the variation in the etching amount of the processed semiconductor wafer, and FIG. 11 schematically shows the variation in the etching amount of the semiconductor wafer processed by the jet liquid processing apparatus according to the present invention. FIG. In the figure, (1) is a jet cup, (2) is an opening of the jet cup, (3) is a vacuum chuck, (4) is a semiconductor wafer, (5) is an etching liquid, (6) is a drain, (7) ) Is an outlet. The same reference numerals in the drawings indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】上方の開口部より処理液を噴出させる噴流
カツプを有し、その噴流カツプの開口部より噴出してい
る処理液に、処理させようとする薄板等を接触させて液
処理を行なう噴流式液処理装置において、噴流カツプ内
の中心軸が共通でその中心軸からの半径が異なる円周上
に排水口を少なくとも二つ以上設けた事を特徴とする噴
流式液処理装置。
1. A liquid jet having a jet cup for jetting a treatment liquid from an upper opening, and a thin plate or the like to be treated is brought into contact with the treatment liquid jetting from the opening of the jet cup to perform the liquid treatment. In the jet type liquid treatment device to perform, the jet type liquid treatment device is characterized in that at least two drainage ports are provided on a circumference having a common central axis in the jet cup and different radii from the central axis.
JP9930889A 1989-04-18 1989-04-18 Jet type liquid treatment device Expired - Lifetime JPH0712034B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9930889A JPH0712034B2 (en) 1989-04-18 1989-04-18 Jet type liquid treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9930889A JPH0712034B2 (en) 1989-04-18 1989-04-18 Jet type liquid treatment device

Publications (2)

Publication Number Publication Date
JPH02277237A JPH02277237A (en) 1990-11-13
JPH0712034B2 true JPH0712034B2 (en) 1995-02-08

Family

ID=14244004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9930889A Expired - Lifetime JPH0712034B2 (en) 1989-04-18 1989-04-18 Jet type liquid treatment device

Country Status (1)

Country Link
JP (1) JPH0712034B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5284554A (en) * 1992-01-09 1994-02-08 International Business Machines Corporation Electrochemical micromachining tool and process for through-mask patterning of thin metallic films supported by non-conducting or poorly conducting surfaces
JP3511442B2 (en) * 1996-12-18 2004-03-29 忠弘 大見 Liquid-saving liquid supply nozzle, liquid-saving liquid supply nozzle device, and wet treatment device used for wet processing including cleaning, etching, development, peeling, etc.

Also Published As

Publication number Publication date
JPH02277237A (en) 1990-11-13

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